Showing 1–14 of 14 results for author: Montalenti, F

Unraveling the Atomic-Scale Pathways Driving Pressure-Induced Phase Transitions in Silicon

Authors: Fabrizio Rovaris, Anna Marzegalli, Francesco Montalenti, Emilio Scalise

Abstract: Silicon exhibits several metastable allotropes which recently attracted attention in the quest for materials with superior (e.g. optical) properties, compatible with Si technology. In this work we shed light on the atomic-scale mechanisms leading to phase transformations in Si under pressure. To do so, we synergically exploit different state-of-the-art approaches. In particular, we use the advance… ▽ More Silicon exhibits several metastable allotropes which recently attracted attention in the quest for materials with superior (e.g. optical) properties, compatible with Si technology. In this work we shed light on the atomic-scale mechanisms leading to phase transformations in Si under pressure. To do so, we synergically exploit different state-of-the-art approaches. In particular, we use the advanced GAP interatomic potential both in NPT molecular dynamics simulations and in solid-state nudged elastic band calculations, validating our predictions with ab initio DFT calculations. We provide a link between evidence reported in experimental nanoindentation literature and simulation results. Particular attention is dedicated to the investigation of atomistic transition paths allowing for the transformation between BC8/R8 phases to the hd one under pure annealing. In this case we show a direct simulation of the local nucleation of the hexagonal phase in a BC8/R8 matrix and its corresponding atomic-scale mechanism extracted by the use of SS-NEB. We extend our study investigating the effect of pressure on the nucleation barrier, providing an argument for explaining the heterogeneous nucleation of the hd phase observed in experiments reported in the literature. △ Less

Submitted 22 August, 2024; originally announced August 2024.

Extreme time extrapolation capabilities and thermodynamic consistency of physics-inspired Neural Networks for the 3D microstructure evolution of materials via Cahn-Hilliard flow

Authors: Daniele Lanzoni, Andrea Fantasia, Roberto Bergamaschini, Olivier Pierre-Louis, Francesco Montalenti

Abstract: A Convolutional Recurrent Neural Network (CRNN) is trained to reproduce the evolution of the spinodal decomposition process in three dimensions as described by the Cahn-Hilliard equation. A specialized, physics-inspired architecture is proven to provide close accordance between the predicted evolutions and the ground truth ones obtained via conventional integration schemes. The method can accurate… ▽ More A Convolutional Recurrent Neural Network (CRNN) is trained to reproduce the evolution of the spinodal decomposition process in three dimensions as described by the Cahn-Hilliard equation. A specialized, physics-inspired architecture is proven to provide close accordance between the predicted evolutions and the ground truth ones obtained via conventional integration schemes. The method can accurately reproduce the evolution of microstructures not represented in the training set at a fraction of the computational costs. Extremely long-time extrapolation capabilities are achieved, up to reaching the theoretically expected equilibrium state of the system, consisting of a layered, phase-separated morphology, despite the training set containing only relatively-short, initial phases of the evolution. Quantitative accordance with the decay rate of the Free energy is also demonstrated up to the late coarsening stages, proving that this class of Machine Learning approaches can become a new and powerful tool for the long timescale and high throughput simulation of materials, while retaining thermodynamic consistency and high-accuracy. △ Less

Submitted 16 October, 2024; v1 submitted 29 July, 2024; originally announced July 2024.

Comments: 12 pages, 6 main text figures, 2 appendix figures, 1 supplementary material figure

Polytypic Quantum Wells in Si and Ge: Impact of 2D Hexagonal Inclusions on Electronic Band Structure

Authors: Anna Marzegalli, Francesco Montalenti, Emilio Scalise

Abstract: Crystal defects, traditionally viewed as detrimental, are now being explored for quantum technology applications. This study focuses on stacking faults in silicon and germanium, forming hexagonal inclusions within the cubic crystal and creating quantum wells that modify electronic properties. By modeling defective structures with varying hexagonal layer counts, we calculated formation energies and… ▽ More Crystal defects, traditionally viewed as detrimental, are now being explored for quantum technology applications. This study focuses on stacking faults in silicon and germanium, forming hexagonal inclusions within the cubic crystal and creating quantum wells that modify electronic properties. By modeling defective structures with varying hexagonal layer counts, we calculated formation energies and electronic band structures. Our results show that hexagonal inclusions in Si and Ge exhibit a direct band gap, changing with inclusion thickness, effectively functioning as quantum wells. We find that Ge inclusions have a direct band gap and form Type-I quantum wells. This research highlights the potential of manipulating extended defects to engineer the optoelectronic properties of Si and Ge, offering new pathways for advanced electronic and photonic device applications. △ Less

Submitted 20 July, 2024; originally announced July 2024.

Quantitative analysis of the prediction performance of a Convolutional Neural Network evaluating the surface elastic energy of a strained film

Authors: Luis Martín Encinar, Daniele Lanzoni, Andrea Fantasia, Fabrizio Rovaris, Roberto Bergamaschini, Francesco Montalenti

Abstract: A Deep Learning approach is devised to estimate the elastic energy density $ρ$ at the free surface of an undulated stressed film. About 190000 arbitrary surface profiles h(x) are randomly generated by Perlin noise and paired with the corresponding elastic energy density profiles $ρ(x)$, computed by a semi-analytical Green's function approximation, suitable for small-slope morphologies. The resulti… ▽ More A Deep Learning approach is devised to estimate the elastic energy density $ρ$ at the free surface of an undulated stressed film. About 190000 arbitrary surface profiles h(x) are randomly generated by Perlin noise and paired with the corresponding elastic energy density profiles $ρ(x)$, computed by a semi-analytical Green's function approximation, suitable for small-slope morphologies. The resulting dataset and smaller subsets of it are used for the training of a Fully Convolutional Neural Network. The trained models are shown to return quantitative predictions of $ρ$, not only in terms of convergence of the loss function during training, but also in validation and testing, with better results in the case of the larger dataset. Extensive tests are performed to assess the generalization capability of the Neural Network model when applied to profiles with localized features or assigned geometries not included in the original dataset. Moreover, its possible exploitation on domain sizes beyond the one used in the training is also analyzed in-depth. The conditions providing a one-to-one reproduction of the ground-truth $ρ(x)$ profiles computed by the Green's approximation are highlighted along with critical cases. The accuracy and robustness of the deep-learned $ρ(x)$ are further demonstrated in the time-integration of surface evolution problems described by simple partial differential equations of evaporation/condensation and surface diffusion. △ Less

Submitted 5 May, 2024; originally announced May 2024.

Comments: 15 pages, 9 figures

Accurate generation of stochastic dynamics based on multi-model Generative Adversarial Networks

Authors: Daniele Lanzoni, Olivier Pierre-Louis, Francesco Montalenti

Abstract: Generative Adversarial Networks (GANs) have shown immense potential in fields such as text and image generation. Only very recently attempts to exploit GANs to statistical-mechanics models have been reported. Here we quantitatively test this approach by applying it to a prototypical stochastic process on a lattice. By suitably adding noise to the original data we succeed in bringing both the Gener… ▽ More Generative Adversarial Networks (GANs) have shown immense potential in fields such as text and image generation. Only very recently attempts to exploit GANs to statistical-mechanics models have been reported. Here we quantitatively test this approach by applying it to a prototypical stochastic process on a lattice. By suitably adding noise to the original data we succeed in bringing both the Generator and the Discriminator loss functions close to their ideal value. Importantly, the discreteness of the model is retained despite the noise. As typical for adversarial approaches, oscillations around the convergence limit persist also at large epochs. This undermines model selection and the quality of the generated trajectories. We demonstrate that a simple multi-model procedure where stochastic trajectories are advanced at each step upon randomly selecting a Generator leads to a remarkable increase in accuracy. This is illustrated by quantitative analysis of both the predicted equilibrium probability distribution and of the escape-time distribution. Based on the reported findings, we believe that GANs are a promising tool to tackle complex statistical dynamics by machine learning techniques △ Less

Submitted 1 August, 2023; v1 submitted 25 May, 2023; originally announced May 2023.

Comments: Main text and appendices, 10 pages and 10 figures Updated version: citations to previous work which was not known to the authors have been added, text has been re-organized and modified accordingly; supplemental material has been moved into appendices

Journal ref: J. Chem. Phys. 159, 144109 (2023)

Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: extrapolation and prediction uncertainty

Authors: Daniele Lanzoni, Marco Albani, Roberto Bergamaschini, Francesco Montalenti

Abstract: We use a Convolutional Recurrent Neural Network approach to learn morphological evolution driven by surface diffusion. To this aim we first produce a training set using phase field simulations. Intentionally, we insert in such a set only relatively simple, isolated shapes. After proper data augmentation, training and validation, the model is shown to correctly predict also the evolution of previou… ▽ More We use a Convolutional Recurrent Neural Network approach to learn morphological evolution driven by surface diffusion. To this aim we first produce a training set using phase field simulations. Intentionally, we insert in such a set only relatively simple, isolated shapes. After proper data augmentation, training and validation, the model is shown to correctly predict also the evolution of previously unobserved morphologies and to have learned the correct scaling of the evolution time with size. Importantly, we quantify prediction uncertainties based on a bootstrap-aggregation procedure. The latter proved to be fundamental in pointing out high uncertainties when applying the model to more complex initial conditions (e.g. leading to splitting of high aspect-ratio individual structures). Automatic smart-augmentation of the training set and design of a hybrid simulation method are discussed. △ Less

Submitted 16 June, 2022; originally announced June 2022.

Comments: 11 pages, 7 figures

Journal ref: Phys. Rev. Materials 6, 103801 (2022)

Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires

Authors: E. Scalise, A. Sarikov, L. Barbisan, A. Marzegalli, D. B. Migas, F. Montalenti, L. Miglio

Abstract: The metastable hexagonal-diamond phase of Si and Ge (and of SiGe alloys) displays superior optical properties with respect to the cubic-diamond one. The latter is the most stable and popular one: growing hexagonal-diamond Si or Ge without working at extreme conditions proved not to be trivial. Recently, however, the possibility of growing hexagonal-diamond group-IV nanowires has been demonstrated,… ▽ More The metastable hexagonal-diamond phase of Si and Ge (and of SiGe alloys) displays superior optical properties with respect to the cubic-diamond one. The latter is the most stable and popular one: growing hexagonal-diamond Si or Ge without working at extreme conditions proved not to be trivial. Recently, however, the possibility of growing hexagonal-diamond group-IV nanowires has been demonstrated, attracting attention on such systems. Based on first-principle calculations we show that the surface energy of the typical facets exposed in Si and Ge nanowires is lower in the hexagonal-diamond phase than in cubic ones. By exploiting a synergic approach based also on a recent state-of-the-art interatomic potential and on a simple geometrical model, we investigate the relative stability of nanowires in the two phases up to few tens of nm in radius, highlighting the surface-related driving force and discussing its relevance in recent experiments. We also explore the stability of Si and Ge core-shell nanowires with hexagonal cores (made of GaP for Si nanowires, of GaAs for Ge nanowires). In this case, the stability of the hexagonal shell over the cubic one is also favored by the energy cost associated with the interface linking the two phases. Interestingly, our calculations indicate a critical radius of the hexagonal shell much lower than the one reported in recent experiments, indicating the presence of a large kinetic barrier allowing for the enlargement of the wire in a metastable phase. △ Less

Submitted 28 September, 2020; originally announced September 2020.

Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A

Authors: Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti, Shiro Tsukamoto, Roberto Bergamaschini, Francesco Montalenti, Stefano Sanguinetti

Abstract: We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed only down to 160 °C, where the indium islands undertake the expected liquid-to-solid phase transition. Further decreasing the temperature causes a sizeab… ▽ More We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed only down to 160 °C, where the indium islands undertake the expected liquid-to-solid phase transition. Further decreasing the temperature causes a sizeable reduction of the island density. An additional, reentrant increasing behavior is observed below 80 °C. We attribute the above complex behavior to the liquid-solid phase transition and to the complex island-island interaction which takes place between crystalline islands in the presence of strain. Indium solid islands grown at temperatures below 160 °C have a face-centered cubic crystal structure. △ Less

Submitted 24 July, 2020; v1 submitted 7 July, 2020; originally announced July 2020.

Comments: 12 pages, 5 figures

Origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach

Authors: Emilio Scalise, Luca Barbisan, Andrey Sarikov, Francesco Montalenti, Leo Miglio, Anna Marzegalli

Abstract: 3C-SiC epitaxially grown on Si displays a large wealth of extended defects. In particular, single, double and triple stacking faults (SFs) are observed in several experiments to coexist. Overabundance of defects has so far limited the exploitation of 3C-SiC/Si for power electronics, in spite of its several ideal properties (mainly in terms of wide gap, high breakdown fields and thermal properties)… ▽ More 3C-SiC epitaxially grown on Si displays a large wealth of extended defects. In particular, single, double and triple stacking faults (SFs) are observed in several experiments to coexist. Overabundance of defects has so far limited the exploitation of 3C-SiC/Si for power electronics, in spite of its several ideal properties (mainly in terms of wide gap, high breakdown fields and thermal properties) and the possibility of a direct integration in the Si technology. Here we use a multiscale approach, based on both classical molecular dynamics (MD) simulations and first-principle calculations, to investigate in-depth the origin, nature and properties of most common 3C-SiC/Si(001) extended defects. Our MD simulations reveal a natural path for the formation of partial dislocation complexes terminating both double and triple SF's. MD results are used as input for superior DFT calculations, allowing us to better determine the core structure and to investigate electronic properties. It turns out that the partial dislocation complexes terminating double and triple SFs are responsible for the introduction of electronic states significantly filling the gap. On the other hand, individual partial dislocations terminating single SFs only induce states very close to the gap edge. We conclude that partial dislocation complexes, in particular the most abundant triple ones, are killer defects in terms of favoring leakage currents. Suggestions coming from theory/simulations for devising a strategy to lower their occurrence are discussed. △ Less

Submitted 21 February, 2020; v1 submitted 31 January, 2020; originally announced January 2020.

Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires

Authors: Simone Assali, Roberto Bergamaschini, Emilio Scalise, Marcel A. Verheijen, Marco Albani, Alain Dijkstra, Ang Li, Sebastian Koelling, Erik P. A. M. Bakkers, Francesco Montalenti, Leo Miglio

Abstract: The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the effect of the growth conditions on the morphology and composition of Ge/GeSn core/shell nanowires by correlating the experimental observations with a theoretical interpretation based on a multi-scale approach. We show tha… ▽ More The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the effect of the growth conditions on the morphology and composition of Ge/GeSn core/shell nanowires by correlating the experimental observations with a theoretical interpretation based on a multi-scale approach. We show that the cross-sectional morphology of Ge/GeSn core/shell nanowires changes from hexagonal to dodecagonal upon increasing the supply of the Sn precursor. This transformation strongly influences the Sn distribution as a higher Sn content is measured under the {112} growth front. Ab-initio DFT calculations provide an atomic-scale explanation by showing that Sn incorporation is favored at the {112} surfaces, where the Ge bonds are tensile-strained. A phase-field continuum model was developed to reproduce the morphological transformation and the Sn distribution within the wire, shedding light on the complex growth mechanism and unveiling the relation between segregation and faceting. The tunability of the photoluminescence emission with the change in composition and morphology of the GeSn shell highlights the potential of the core/shell nanowire system for opto-electronic devices operating at mid-infrared wavelengths. △ Less

Submitted 16 January, 2020; v1 submitted 27 June, 2019; originally announced June 2019.

Temperature-dependent stability of polytypes and stacking faults in SiC: reconciling theory and experiments

Authors: Emilio Scalise, Anna Marzegalli, Francesco Montalenti, Leo Miglio

Abstract: The relative stability of SiC polytypes, changing with temperature, has been considered a paradox for about thirty years, due to discrepancies between theory and experiments. Based on ab-initio calculations including van der Waals corrections, a temperature-dependent polytypic diagram consistent with the experimental observations is obtained. Results are easily interpreted based on the influence o… ▽ More The relative stability of SiC polytypes, changing with temperature, has been considered a paradox for about thirty years, due to discrepancies between theory and experiments. Based on ab-initio calculations including van der Waals corrections, a temperature-dependent polytypic diagram consistent with the experimental observations is obtained. Results are easily interpreted based on the influence of the hexagonality on both cohesive energy and entropy. Temperature-dependent stability of stacking faults is also analyzed and found to be in agreement with experimental evidences. Our results suggest that lower temperatures during SiC crystal deposition are advantageous in order to reduce ubiquitous stacking faults in SiC-based power devices. △ Less

Submitted 5 March, 2019; originally announced March 2019.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Applied 12, 021002 (2019)

Hydrostatic strain enhancement in laterally confined SiGe nanostripes

Authors: G. M. Vanacore, M. Chaigneau, N. Barrett, M. Bollani, F. Boioli, M. Salvalaglio, F. Montalenti, N. Manini, L. Caramella, P. Biagioni, D. Chrastina, G. Isella, O. Renault, M. Zani, R. Sordan, G. Onida, R. Ossikovski, H. -J. Drouhin, A. Tagliaferri

Abstract: Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoiding the use of external stressors, and thus improving the scalability. Spectro-microscopy techniques, finite element method simulations and ab initio c… ▽ More Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoiding the use of external stressors, and thus improving the scalability. Spectro-microscopy techniques, finite element method simulations and ab initio calculations are used to investigate the strain state of laterally confined Ge-rich SiGe nano-stripes. Strain information is obtained by tip enhanced Raman spectroscopy with an unprecedented lateral resolution of ~ 30 nm. The nano-stripes exhibit a large tensile hydrostatic strain component, which is maximum at the center of the top free surface, and becomes very small at the edges. The maximum lattice deformation is larger than the typical values of thermally relaxed Ge/Si(001) layers. This strain enhancement originates from a frustrated relaxation in the out-of-plane direction, resulting from the combination of the lateral confinement induced by the substrate side walls and the plastic relaxation of the misfit strain in the (001) plane at the SiGe/Si interface. The effect of this tensile lattice deformation at the stripe surface is probed by work function mapping, performed with a spatial resolution better than 100 nm using X-ray photoelectron emission microscopy. The nano-stripes exhibit a positive work function shift with respect to a bulk SiGe alloy, quantitatively confirmed by electronic structure calculations of tensile strained configurations. The present results have a potential impact on the design of optoelectronic devices at a nanometer length scale. △ Less

Submitted 6 June, 2013; originally announced June 2013.

Comments: 40 pages, 11 figures, submitted to Physical Review B

Journal ref: Physical Review B 88, 115309 (2013)

Monolithic growth of ultra-thin Ge nanowires on Si(001)

Authors: Jianjun Zhang, Georgios Katsaros, Francesco Montalenti, Daniele Scopece, Roman O. Rezaev, Christine Mickel, Bernd Rellinghaus, Leo Miglio, Silvano De Franceschi, Armando Rastelli, Oliver G. Schmidt

Abstract: Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or the [010] direction. On atomically flat surfaces, they exhibit a highly uniform, triangular cross section. A simple thermodynamic model accounts for the existenc… ▽ More Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or the [010] direction. On atomically flat surfaces, they exhibit a highly uniform, triangular cross section. A simple thermodynamic model accounts for the existence of a preferential base width for longitudinal expansion, in quantitative agreement with the experimental findings. Despite the absence of intentional doping, first transistor-type devices made from single wires show low-resistive electrical contacts and single hole transport at sub-Kelvin temperatures. In view of their exceptionally small and self-defined cross section, these Ge wires hold promise for the realization of hole systems with exotic properties and provide a new development route for silicon-based nanoelectronics. △ Less

Submitted 3 August, 2012; originally announced August 2012.

Comments: 23 pages, 5 figures

Journal ref: Phys. Rev. Lett. 109, 085502 (2012)

Impact-driven effects in thin-film growth: steering and transient mobility at the Ag(110) surface

Authors: Michele Ceriotti, Riccardo Ferrando, Francesco Montalenti

Abstract: Low-energy atomic impacts on the Ag(110) surface are investigated by molecular dynamics simulations based on reliable many-body semiempirical potentials. Trajectory deflections (steering) caused by the atom-surface interaction are observed, together with impact-following, transient-mobility effects. Such processes are quantitatively analysed and their dependence on the initial kinetic energy and… ▽ More Low-energy atomic impacts on the Ag(110) surface are investigated by molecular dynamics simulations based on reliable many-body semiempirical potentials. Trajectory deflections (steering) caused by the atom-surface interaction are observed, together with impact-following, transient-mobility effects. Such processes are quantitatively analysed and their dependence on the initial kinetic energy and on the impinging direction is discussed. A clear influence of the surface anisotropy on both steering and transient mobility effects is revealed by our simulations for the simple isolated-atom case and in the submonolayer-growth regime. For the latter case, we illustrate how steering and transient mobility affect the film morphology at the nanoscale. △ Less

Submitted 7 April, 2008; originally announced April 2008.

Comments: 7 pages, 9 figures

Journal ref: Nanotechnology 17, 3556-3562 (2006)