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Condensed Matter > Materials Science

arXiv:1903.01936 (cond-mat)
[Submitted on 5 Mar 2019]

Title:Temperature-dependent stability of polytypes and stacking faults in SiC: reconciling theory and experiments

Authors:Emilio Scalise, Anna Marzegalli, Francesco Montalenti, Leo Miglio
View a PDF of the paper titled Temperature-dependent stability of polytypes and stacking faults in SiC: reconciling theory and experiments, by Emilio Scalise and 2 other authors
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Abstract:The relative stability of SiC polytypes, changing with temperature, has been considered a paradox for about thirty years, due to discrepancies between theory and experiments. Based on ab-initio calculations including van der Waals corrections, a temperature-dependent polytypic diagram consistent with the experimental observations is obtained. Results are easily interpreted based on the influence of the hexagonality on both cohesive energy and entropy. Temperature-dependent stability of stacking faults is also analyzed and found to be in agreement with experimental evidences. Our results suggest that lower temperatures during SiC crystal deposition are advantageous in order to reduce ubiquitous stacking faults in SiC-based power devices.
Comments: 5 pages, 4 figures
Subjects: Materials Science (cond-mat.mtrl-sci); Chemical Physics (physics.chem-ph); Computational Physics (physics.comp-ph)
Cite as: arXiv:1903.01936 [cond-mat.mtrl-sci]
  (or arXiv:1903.01936v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1903.01936
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. Applied 12, 021002 (2019)
Related DOI: https://doi.org/10.1103/PhysRevApplied.12.021002
DOI(s) linking to related resources

Submission history

From: Emilio Scalise [view email]
[v1] Tue, 5 Mar 2019 17:11:36 UTC (1,468 KB)
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