Showing 1–3 of 3 results for author: Mintairov, A

Multiwall nanotubes of molybdenum disulfide as optical resonators

Authors: D. R. Kazanov, A. V. Poshakinskiy, V. Yu. Davydov, A. N. Smirnov, D. A. Kirilenko, M. Remškar, S. Fathipour, A. Mintairov, A. Seabaugh, B. Gil, T. V. Shubina

Abstract: We study the optical properties of MoS$_2$ nanotubes (NTs) with walls comprising dozens of monolayers. We reveal strong peaks in micro-photoluminescence ($μ$-PL) spectra when detecting the light polarized along the NT axis. We develop a model describing the optical properties of the nanotubes acting as optical resonators which support the quantization of whispering gallery modes inside the NT wall… ▽ More We study the optical properties of MoS$_2$ nanotubes (NTs) with walls comprising dozens of monolayers. We reveal strong peaks in micro-photoluminescence ($μ$-PL) spectra when detecting the light polarized along the NT axis. We develop a model describing the optical properties of the nanotubes acting as optical resonators which support the quantization of whispering gallery modes inside the NT wall. The experimental observation of the resonances in $μ$-PL allows one to use them as a contactless method of the estimation of the wall width. Our findings open a way to use such NTs as polarization-sensitive components of nanophotonic devices. △ Less

Submitted 4 July, 2018; originally announced July 2018.

Comments: 7 pages, 4 figures

Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

Authors: Meng Qi, Guowang Li, Vladimir Protasenko, Pei Zhao, Jai Verma, Bo Song, Satyaki Ganguly, Mingda Zhu, Zongyang Hu, Xiaodong Yan, Alexander Mintairov, Huili Grace Xing, Debdeep Jena

Abstract: This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried act… ▽ More This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters, and for power electronics. △ Less

Submitted 31 January, 2015; originally announced February 2015.

Comments: 18 pages, 4 figures, published in Applied Physics Letters

Journal ref: Applied Physics Letters, 106, 041906 (2015)

Ge Quantum Dots Encapsulated by AlAs Grown by Molecular Beam Epitaxy on GaAs Without Extended Defects

Authors: Meng Qi, Chad A. Stephenson, Vladimir Protasenko, William A. O'Brien, Alexander Mintairov, Huili Grace Xing, Mark A. Wistey

Abstract: We demonstrate nearly-spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy (MBE). The QDs were formed without a wetting layer using a high temperature, in-situ anneal. Subsequent AlAs overgrowth was free from threading dislocations and anti-phase domains. The straddling band alignment for Ge in AlAs promises strong a… ▽ More We demonstrate nearly-spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy (MBE). The QDs were formed without a wetting layer using a high temperature, in-situ anneal. Subsequent AlAs overgrowth was free from threading dislocations and anti-phase domains. The straddling band alignment for Ge in AlAs promises strong and tunable confinement for both electrons and holes. The reflection high-energy electron diffraction (RHEED) pattern changed from 2x3 to 2x5 with anneal, which can be explained by surface reconstructions based on the electron-counting model. △ Less

Submitted 6 November, 2013; originally announced November 2013.

Comments: 14 pages, 5 figures, submitted to Applied Physics Letters