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Condensed Matter > Materials Science

arXiv:1311.1448 (cond-mat)
[Submitted on 6 Nov 2013]

Title:Ge Quantum Dots Encapsulated by AlAs Grown by Molecular Beam Epitaxy on GaAs Without Extended Defects

Authors:Meng Qi, Chad A. Stephenson, Vladimir Protasenko, William A. O'Brien, Alexander Mintairov, Huili Grace Xing, Mark A. Wistey
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Abstract:We demonstrate nearly-spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy (MBE). The QDs were formed without a wetting layer using a high temperature, in-situ anneal. Subsequent AlAs overgrowth was free from threading dislocations and anti-phase domains. The straddling band alignment for Ge in AlAs promises strong and tunable confinement for both electrons and holes. The reflection high-energy electron diffraction (RHEED) pattern changed from 2x3 to 2x5 with anneal, which can be explained by surface reconstructions based on the electron-counting model.
Comments: 14 pages, 5 figures, submitted to Applied Physics Letters
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1311.1448 [cond-mat.mtrl-sci]
  (or arXiv:1311.1448v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1311.1448
Related DOI: https://doi.org/10.1063/1.4866278

Submission history

From: Meng Qi [view email]
[v1] Wed, 6 Nov 2013 17:07:16 UTC (5,285 KB)
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