Showing 1–50 of 58 results for author: Luisier, M

Distributed Equivariant Graph Neural Networks for Large-Scale Electronic Structure Prediction

Authors: Manasa Kaniselvan, Alexander Maeder, Chen Hao Xia, Alexandros Nikolaos Ziogas, Mathieu Luisier

Abstract: Equivariant Graph Neural Networks (eGNNs) trained on density-functional theory (DFT) data can potentially perform electronic structure prediction at unprecedented scales, enabling investigation of the electronic properties of materials with extended defects, interfaces, or exhibiting disordered phases. However, as interactions between atomic orbitals typically extend over 10+ angstroms, the graph… ▽ More Equivariant Graph Neural Networks (eGNNs) trained on density-functional theory (DFT) data can potentially perform electronic structure prediction at unprecedented scales, enabling investigation of the electronic properties of materials with extended defects, interfaces, or exhibiting disordered phases. However, as interactions between atomic orbitals typically extend over 10+ angstroms, the graph representations required for this task tend to be densely connected, and the memory requirements to perform training and inference on these large structures can exceed the limits of modern GPUs. Here we present a distributed eGNN implementation which leverages direct GPU communication and introduce a partitioning strategy of the input graph to reduce the number of embedding exchanges between GPUs. Our implementation shows strong scaling up to 128 GPUs, and weak scaling up to 512 GPUs with 87% parallel efficiency for structures with 3,000 to 190,000 atoms on the Alps supercomputer. △ Less

Submitted 4 July, 2025; originally announced July 2025.

Comments: 13 pages, 8 figures

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells

Authors: Marko Mladenović, Manasa Kaniselvan, Christoph Weilenmann, Alexandros Emboras, Mathieu Luisier

Abstract: Valence change memory (VCM) cells based on SrTiO$_3$ (STO), a perovskite oxide, are a promising type of emerging memory device. While the operational principle of most VCM cells relies on the growth and dissolution of one or multiple conductive filaments, those based on STO are known to exhibit a distinctive, 'interface-type' switching, which is associated with the modulation of the Schottky barri… ▽ More Valence change memory (VCM) cells based on SrTiO$_3$ (STO), a perovskite oxide, are a promising type of emerging memory device. While the operational principle of most VCM cells relies on the growth and dissolution of one or multiple conductive filaments, those based on STO are known to exhibit a distinctive, 'interface-type' switching, which is associated with the modulation of the Schottky barrier at their active electrode. Still, a detailed picture of the processes that lead to interface-type switching is not available. In this work, we use a fully atomistic and ab initio model to study the resistive switching of a Pt-STO-Ti stack. We identify that the termination of the crystalline STO plays a decisive role in the switching mechanism, depending on the relative band alignment between the material and the Pt electrode. In particular, we show that the accumulation of oxygen vacancies at the Pt side can be at the origin of resistive switching in TiO$_2$-terminated devices by lowering the conduction band minimum of the STO layer, thus facilitating transmission through the Schottky barrier. Moreover, we investigate the possibility of filamentary switching in STO and reveal that it is most likely to occur at the Pt electrode of the SrO-terminated cells. △ Less

Submitted 30 June, 2025; originally announced July 2025.

Ab initio functional-independent calculations of the clamped Pockels tensor of tetragonal barium titanate

Authors: Virginie de Mestral, Lorenzo Bastonero, Michele Kotiuga, Marko Mladenovic, Nicola Marzari, Mathieu Luisier

Abstract: We present an ab initio method to calculate the clamped Pockels tensor of ferroelectric materials from density-functional theory, the modern theory of polarization exploiting the electric-enthalpy functional, and automated first- and second-order finite-difference derivatives of the polarizations and the Hellmann-Feynman forces. Thanks to the functional-independent capabilities of our approach, we… ▽ More We present an ab initio method to calculate the clamped Pockels tensor of ferroelectric materials from density-functional theory, the modern theory of polarization exploiting the electric-enthalpy functional, and automated first- and second-order finite-difference derivatives of the polarizations and the Hellmann-Feynman forces. Thanks to the functional-independent capabilities of our approach, we can determine the Pockels tensor of tetragonal barium titanate (BTO) beyond the local density approximation (LDA), with arbitrary exchange-correlation (XC) functionals, for example, PBEsol. The latter, together with RRKJ ultra-soft pseudo-potentials (PP) and a supercell exhibiting local titanium off-centering, enables us to stabilize the negative optical phonon modes encountered in tetragonal BTO when LDA and norm-conserving PP are combined. As a result, the correct value range of $r_{51}$, the largest experimental Pockels coefficient of BTO, is recovered. We also reveal that $r_{51}$ increases with decreasing titanium off-centering for this material. The lessons learned from the structural, dielectric, and vibrational investigations of BTO will be essential to design next-generation electro-optical modulators based on the Pockels effect. △ Less

Submitted 16 June, 2025; originally announced June 2025.

Comments: 28 pages, 8 figures

Journal ref: V. de Mestral, L. Bastonero, M. Kotiuga, M. Mladenovic, N. Marzari, and M. Luisier, Ab initio functional-independent calculations of the clamped pockels tensor of tetragonal barium titanate, Phys. Rev. B 111, 184306 (2025)

Simulation of single hole spin qubit in strained triangular FinFET quantum devices

Authors: Ilan Bouquet, Jiang Cao, Mathieu Luisier

Abstract: Using an in-house Schroedinger-Poisson (SP) solver, we investigate the creation of a single hole spin qubit inside a triple-gate triangular silicon fin field effect transistor (Si FinFET) quantum device similar to experimental structures. The gate induced formation of the required quantum dot (QD) is monitored based on the Luttinger-Kohn 6x6 kp method accounting for magnetic fields and strain to d… ▽ More Using an in-house Schroedinger-Poisson (SP) solver, we investigate the creation of a single hole spin qubit inside a triple-gate triangular silicon fin field effect transistor (Si FinFET) quantum device similar to experimental structures. The gate induced formation of the required quantum dot (QD) is monitored based on the Luttinger-Kohn 6x6 kp method accounting for magnetic fields and strain to determine the qubit ground state. Strain arises from the inhomogeneous contraction of the different FinFET components when they are cooled down to cryogenic temperatures. It leads to a renormalization of the qubit energy levels, thus impacting both the heavy-hole (HH) and light-hole (LH) populations as well as their mixing. The dot length, band mixing, g-factor, and Larmor/Rabi frequencies of the considered device are extracted. In particular, we show that these metrics exhibit strong strain-dependent variations of their magnitude, thus underlying the importance of including realistic thermal contraction scenarios when modeling hole spin qubits. △ Less

Submitted 28 May, 2025; originally announced May 2025.

Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering

Authors: Manasa Kaniselvan, Kevin Portner, Donato Francesco Falcone, Valeria Bragaglia, Jente Clarysse, Laura Bégon-Lours, Marko Mladenović, Bert J. Offrein, Mathieu Luisier

Abstract: A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltages is of significant interest, as it ensures compatibility with Complementary Metal-Oxide-Semiconductor (CMOS) technologies. Previous studies have identified that changing the initial stoichiometry of the switching layer… ▽ More A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltages is of significant interest, as it ensures compatibility with Complementary Metal-Oxide-Semiconductor (CMOS) technologies. Previous studies have identified that changing the initial stoichiometry of the switching layer and/or implementing thermal engineering approaches has an influence over the electroforming voltage magnitude, but the exact mechanisms remain unclear. Here, we develop an understanding of how these mechanisms work within a standard a-HfO$_x$/Ti RRAM stack through combining atomistic driven-Kinetic Monte Carlo (d-KMC) simulations with experimental data. By performing device-scale simulations at atomistic resolution, we can precisely model the movements of point defects under applied biases in structurally inhomogeneous materials, which allows us to not only capture finite-size effects but also to understand how conductive filaments grow under different electroforming conditions. Doing atomistic simulations at the device-level also enables us to link simulations of the mechanisms behind conductive filament formation with trends in experimental data with the same material stack. We identify a transition from primarily vertical to lateral ion movement dominating the filamentary growth process in sub-stoichiometric oxides, and differentiate the influence of global and local heating on the morphology of the formed filaments. These different filamentary structures have implications for the dynamic range exhibited by formed devices in subsequent SET/RESET operations. Overall, our results unify the complex ion dynamics in technologically relevant HfO$_x$/Ti-based stacks, and provide guidelines that can be leveraged when fabricating devices. △ Less

Submitted 10 May, 2025; originally announced May 2025.

Learning the Electronic Hamiltonian of Large Atomic Structures

Authors: Chen Hao Xia, Manasa Kaniselvan, Alexandros Nikolaos Ziogas, Marko Mladenović, Rayen Mahjoub, Alexander Maeder, Mathieu Luisier

Abstract: Graph neural networks (GNNs) have shown promise in learning the ground-state electronic properties of materials, subverting ab initio density functional theory (DFT) calculations when the underlying lattices can be represented as small and/or repeatable unit cells (i.e., molecules and periodic crystals). Realistic systems are, however, non-ideal and generally characterized by higher structural com… ▽ More Graph neural networks (GNNs) have shown promise in learning the ground-state electronic properties of materials, subverting ab initio density functional theory (DFT) calculations when the underlying lattices can be represented as small and/or repeatable unit cells (i.e., molecules and periodic crystals). Realistic systems are, however, non-ideal and generally characterized by higher structural complexity. As such, they require large (10+ Angstroms) unit cells and thousands of atoms to be accurately described. At these scales, DFT becomes computationally prohibitive, making GNNs especially attractive. In this work, we present a strictly local equivariant GNN capable of learning the electronic Hamiltonian (H) of realistically extended materials. It incorporates an augmented partitioning approach that enables training on arbitrarily large structures while preserving local atomic environments beyond boundaries. We demonstrate its capabilities by predicting the electronic Hamiltonian of various systems with up to 3,000 nodes (atoms), 500,000+ edges, ~28 million orbital interactions (nonzero entries of H), and $\leq$0.53% error in the eigenvalue spectra. Our work expands the applicability of current electronic property prediction methods to some of the most challenging cases encountered in computational materials science, namely systems with disorder, interfaces, and defects. △ Less

Submitted 6 June, 2025; v1 submitted 31 January, 2025; originally announced January 2025.

Comments: *Equal Contribution

Electron-Electron Interactions in Device Simulation via Non-equilibrium Green's Functions and the GW Approximation

Authors: Leonard Deuschle, Jiang Cao, Alexandros Nikolaos Ziogas, Anders Winka, Alexander Maeder, Nicolas Vetsch, Mathieu Luisier

Abstract: The continuous scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) has led to device geometries where charged carriers are increasingly confined to ever smaller channel cross sections. This development is associated with reduced screening of long-range Coulomb interactions. To accurately predict the behavior of such ultra-scaled devices, electron-electron (e-e) interactions mus… ▽ More The continuous scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) has led to device geometries where charged carriers are increasingly confined to ever smaller channel cross sections. This development is associated with reduced screening of long-range Coulomb interactions. To accurately predict the behavior of such ultra-scaled devices, electron-electron (e-e) interactions must be explicitly incorporated in their quantum transport simulation. In this paper, we present an \textit{ab initio} atomistic simulation framework based on density functional theory, the non-equilibrium Green's function formalism, and the self-consistent GW approximation to perform this task. The implemented method is first validated with a carbon nanotube test structure before being applied to calculate the transfer characteristics of a silicon nanowire MOSFET in a gate-all-around configuration. As a consequence of e-e scattering, the energy and spatial distribution of the carrier and current densities both significantly change, while the on-current of the transistor decreases owing to the Coulomb repulsion between the electrons. Furthermore, we demonstrate how the resulting bandgap modulation of the nanowire channel as a function of the gate-to-source voltage could potentially improve the device performance. To the best of our knowledge, this study is the first one reporting large-scale atomistic quantum transport simulations of nano-devices under non-equilibrium conditions and in the presence of e-e interactions within the GW approximation. △ Less

Submitted 17 December, 2024; originally announced December 2024.

Influence of Carrier-Carrier Interactions on the Sub-threshold Swing of Band-to-Band Tunnelling Transistors

Authors: Chen Hao Xia, Leonard Deuschle, Jiang Cao, Alexander Maeder, Mathieu Luisier

Abstract: Band-to-band tunnelling field-effect transistors (TFETs) have long been considered as promising candidates for future low-power logic applications. However, fabricated TFETs rarely reach sub-60 mV/dec sub-threshold swings (SS) at room temperature. Previous theoretical studies identified Auger processes as possible mechanisms for the observed degradation of SS. Through first-principles quantum tran… ▽ More Band-to-band tunnelling field-effect transistors (TFETs) have long been considered as promising candidates for future low-power logic applications. However, fabricated TFETs rarely reach sub-60 mV/dec sub-threshold swings (SS) at room temperature. Previous theoretical studies identified Auger processes as possible mechanisms for the observed degradation of SS. Through first-principles quantum transport simulations incorporating carrier-carrier interactions within the Non-equilibrium Green's Function formalism and self-consistent GW approximation, we confirm here that Auger processes are indeed at least partly responsible for the poor performance of TFETs. Using a carbon nanotube TFET as testbed, we show that carrier-carrier scattering alone significantly increases the OFF-state current of these devices, thus worsening their sub-threshold behavior. △ Less

Submitted 30 October, 2024; originally announced October 2024.

Comments: 6 pages, 5 figures

Journal ref: IEEE Electron Device Letters, vol. 45, no. 8, pp. 1504-1507, Aug. 2024

Single Neuromorphic Memristor closely Emulates Multiple Synaptic Mechanisms for Energy Efficient Neural Networks

Authors: Christoph Weilenmann, Alexandros Ziogas, Till Zellweger, Kevin Portner, Marko Mladenović, Manasa Kaniselvan, Timoleon Moraitis, Mathieu Luisier, Alexandros Emboras

Abstract: Biological neural networks do not only include long-term memory and weight multiplication capabilities, as commonly assumed in artificial neural networks, but also more complex functions such as short-term memory, short-term plasticity, and meta-plasticity - all collocated within each synapse. Here, we demonstrate memristive nano-devices based on SrTiO3 that inherently emulate all these synaptic f… ▽ More Biological neural networks do not only include long-term memory and weight multiplication capabilities, as commonly assumed in artificial neural networks, but also more complex functions such as short-term memory, short-term plasticity, and meta-plasticity - all collocated within each synapse. Here, we demonstrate memristive nano-devices based on SrTiO3 that inherently emulate all these synaptic functions. These memristors operate in a non-filamentary, low conductance regime, which enables stable and energy efficient operation. They can act as multi-functional hardware synapses in a class of bio-inspired deep neural networks (DNN) that make use of both long- and short-term synaptic dynamics and are capable of meta-learning or "learning-to-learn". The resulting bio-inspired DNN is then trained to play the video game Atari Pong, a complex reinforcement learning task in a dynamic environment. Our analysis shows that the energy consumption of the DNN with multi-functional memristive synapses decreases by about two orders of magnitude as compared to a pure GPU implementation. Based on this finding, we infer that memristive devices with a better emulation of the synaptic functionalities do not only broaden the applicability of neuromorphic computing, but could also improve the performance and energy costs of certain artificial intelligence applications. △ Less

Submitted 26 February, 2024; originally announced February 2024.

Phonon-Limited Transport in 2D Materials: A Unified Approach for ab initio Mobility and Current Calculations

Authors: Jonathan Backman, Youseung Lee, Mathieu Luisier

Abstract: This paper presents an ab initio methodology to account for electron-phonon interactions in 2D materials, focusing on transition metal dichalcogenides (TMDCs). It combines density functional theory and maximally localized Wannier functions to acquire material data and relies on the linearized Boltzmann transport equation (LBTE) and the non-equilibrium Green's functions (NEGF) method to determine t… ▽ More This paper presents an ab initio methodology to account for electron-phonon interactions in 2D materials, focusing on transition metal dichalcogenides (TMDCs). It combines density functional theory and maximally localized Wannier functions to acquire material data and relies on the linearized Boltzmann transport equation (LBTE) and the non-equilibrium Green's functions (NEGF) method to determine the transport properties of materials and devices, respectively. It is shown that for MoS$_2$, both LBTE and NEGF return very close mobility values, without the need to adjust any parameter. The excellent agreement between both approaches results from the inclusion of non-diagonal entries in the electron-phonon scattering self-energies. The NEGF solver is then used to shed light on the "current vs. voltage" characteristics of a monolayer MoS$_2$ transistor, highlighting how the interactions with phonons impact both the current magnitude and its distribution. The mobility of other TMDCs is considered as well, demonstrating the capabilities of the proposed technique to assess the potential of 2D channel materials in next-generation logic applications. △ Less

Submitted 1 December, 2023; originally announced December 2023.

Field-Effect Transistors based on 2-D Materials: a Modeling Perspective

Authors: Mathieu Luisier, Cedric Klinkert, Sara Fiore, Jonathan Backman, Youseung Lee, Christian Stieger, Áron Szabó

Abstract: Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as its Silicon counterpart, device simulation can be of great help to predict the ultimate performance of 2D FETs and provide experimentalists with reliable desig… ▽ More Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as its Silicon counterpart, device simulation can be of great help to predict the ultimate performance of 2D FETs and provide experimentalists with reliable design guidelines. In this paper, an ab initio modelling approach dedicated to well-known and exotic 2D materials is presented and applied to the simulation of various components, from thermionic to tunnelling transistors based on mono- and multi-layer channels. Moreover, the physics of metal - 2D semiconductor contacts is revealed and the importance of different scattering sources on the mobility of selected 2D materials is discussed. It is expected that modeling frameworks similar to the one described here will not only accompany future developments of 2D devices, but will also enable them. △ Less

Submitted 26 October, 2023; originally announced October 2023.

Exchange interactions and intermolecular hybridization in a spin-1/2 nanographene dimer

Authors: N. Krane, E. Turco, A. Bernhardt, D. Jacob, G. Gandus, D. Passerone, M. Luisier, M. Juríček, R. Fasel, J. Fernández-Rossier, P. Ruffieux

Abstract: Phenalenyl is a radical nanographene with triangular shape that hosts an unpaired electron with spin S = 1/2. The open-shell nature of phenalenyl is expected to be retained in covalently bonded networks. Here, we study a first step in that direction and report the synthesis of the phenalenyl dimer by combining in-solution synthesis and on-surface activation and its characterization both on Au(111)… ▽ More Phenalenyl is a radical nanographene with triangular shape that hosts an unpaired electron with spin S = 1/2. The open-shell nature of phenalenyl is expected to be retained in covalently bonded networks. Here, we study a first step in that direction and report the synthesis of the phenalenyl dimer by combining in-solution synthesis and on-surface activation and its characterization both on Au(111) and on a monolayer of NaCl on top of Au(111) by means of inelastic electron tunneling spectroscopy (IETS). IETS shows inelastic steps that, together with a thorough theoretical analysis, are identified as the singlet-triplet excitation arising from interphenalenyl exchange. Two prominent features of our data permit to shed light on the nature of spin interactions in this system. First, the excitation energies with and without the NaCl decoupling layer are 48 and 41 meV, respectively, indicating a significant renormalization of the spin excitation energies due to exchange with the Au(111) electrons. Second, a position-dependent bias-asymmetry of the height of the inelastic steps is accounted for by an interphenalenyl hybridization of the singly occupied phenalenyl orbitals that is only possible via third neighbor hopping. This hybridization is also essential to activate kinetic interphenalenyl exchange. Our results set the stage for future work on the bottom-up synthesis of spin S = 1/2 spin lattices with large exchange interaction. △ Less

Submitted 19 July, 2023; originally announced July 2023.

Comments: 16 pages main manuscript, 4 main figures; supplementary information containing additional data is included

Ab initio Self-consistent GW Calculations in Non-Equilibrium Devices: Auger Recombination and Electron-Electron Scattering

Authors: Leonard Deuschle, Jonathan Backman, Mathieu Luisier, Jiang Cao

Abstract: We present first-principles quantum transport simulations of single-walled carbon nanotubes based on the NEGF method and including carrier-carrier interactions within the self-consistent GW approximation. Motivated by the characteristic enhancement of interaction between charge carriers in one-dimensional systems, we show that the developed framework can predict Auger recombination, hot carrier re… ▽ More We present first-principles quantum transport simulations of single-walled carbon nanotubes based on the NEGF method and including carrier-carrier interactions within the self-consistent GW approximation. Motivated by the characteristic enhancement of interaction between charge carriers in one-dimensional systems, we show that the developed framework can predict Auger recombination, hot carrier relaxation, and impact ionization in this type of nanostructures. Using the computed scattering rates, we infer the inverse electron-hole pair lifetimes for different Auger processes in several device configurations. △ Less

Submitted 11 July, 2023; originally announced July 2023.

Platinum contacts for 9-atom-wide armchair graphene nanoribbons

Authors: Chunwei Hsu, Michael Rohde, Gabriela Borin Barin, Guido Gandus, Daniele Passerone, Mathieu Luisier, Pascal Ruffieux, Roman Fasel, Herre S. J. van der Zant, Maria El Abbassi

Abstract: Creating a good contact between electrodes and graphene nanoribbons (GNRs) has been a longstanding challenge in searching for the next GNR-based nanoelectronics. This quest requires the controlled fabrication of sub-20 nm metallic gaps, a clean GNR transfer minimizing damage and organic contamination during the device fabrication, as well as work function matching to minimize the contact resistanc… ▽ More Creating a good contact between electrodes and graphene nanoribbons (GNRs) has been a longstanding challenge in searching for the next GNR-based nanoelectronics. This quest requires the controlled fabrication of sub-20 nm metallic gaps, a clean GNR transfer minimizing damage and organic contamination during the device fabrication, as well as work function matching to minimize the contact resistance. Here, we transfer 9-atom-wide armchair-edged GNRs (9-AGNRs) grown on Au(111)/mica substrates to pre-patterned platinum electrodes, yielding polymer-free 9-AGNR field-effect transistor devices. Our devices have a resistance in the range of $10^6$ to $10^8$ $Ω$ in the low-bias regime, which is 2 to 4 orders of magnitude lower than previous reports. Density functional theory (DFT) calculations combined with the non-equilibrium Green's function method (NEGF) explain the observed p-type electrical characteristics and further demonstrate that platinum gives strong coupling and higher transmission in comparison to other materials such as graphene. △ Less

Submitted 31 January, 2023; originally announced January 2023.

Comments: 6 pages, 5 figures

Journal ref: Appl. Phys. Lett. 122, 173104 (2023)

Strongly correlated physics in organic open-shell quantum systems

Authors: G. Gandus, D. Passerone, R. Stadler, M. Luisier, A. Valli

Abstract: Strongly correlated physics arises due to electron-electron scattering within partially-filled orbitals, and in this perspective, organic molecules in open-shell configuration are good candidates to exhibit many-body effects. With a focus on neutral organic radicals with a molecular orbital hosting a single unpaired electron (SOMO) we investigate many-body effects on electron transport in a single… ▽ More Strongly correlated physics arises due to electron-electron scattering within partially-filled orbitals, and in this perspective, organic molecules in open-shell configuration are good candidates to exhibit many-body effects. With a focus on neutral organic radicals with a molecular orbital hosting a single unpaired electron (SOMO) we investigate many-body effects on electron transport in a single-molecule junction setup. Within a combination of density functional theory and many-body techniques, we perform numerical simulations for an effective model for which all the parameters, including the Coulomb tensor, are derived ab-initio. We demonstrate that the SOMO resonance is prone towards splitting, and identify a giant electronic scattering rate as the driving many-body mechanism, akin to a Mott metal-to-insulator transition. The nature of the splitting, and thus of the resulting gap, as well as the spatial distribution of the SOMO and its coupling to the electrodes, have dramatic effects on the transport properties of the junction. We argue that the phenomenon and the underlying microscopic mechanism are general, and apply to a wide family of open-shell molecular systems. △ Less

Submitted 31 December, 2022; originally announced January 2023.

Comments: 15 pages, 9 figures

An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory

Authors: Manasa Kaniselvan, Mathieu Luisier, Marko Mladenović

Abstract: In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurate simulations of the switching dynamics of these devices can be difficult due to their typically disordered atomic structures and inhomogeneous arrangements of defects. To address this, we introduce an atomistic… ▽ More In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurate simulations of the switching dynamics of these devices can be difficult due to their typically disordered atomic structures and inhomogeneous arrangements of defects. To address this, we introduce an atomistic framework for modelling VCM cells. It combines a stochastic Kinetic Monte Carlo approach for atomic rearrangement with a quantum transport scheme, both parameterized at the ab-initio level by using inputs from Density Functional Theory (DFT). Each of these steps operates directly on the underlying atomic structure. The model thus directly relates the energy landscape and electronic structure of the device to its switching characteristics. We apply this model to simulate non-volatile switching between high- and low-resistance states in an TiN/HfO2/Ti/TiN stack, and analyze both the kinetics and stochasticity of the conductance transitions. We also resolve the atomic nature of current flow resulting from the valence change mechanism, finding that conductive paths are formed between the undercoordinated Hf atoms neighboring oxygen vacancies. The model developed here can be applied to different material systems to evaluate their resistive switching potential, both for use as conventional memory cells and as neuromorphic computing primitives. △ Less

Submitted 28 December, 2022; originally announced December 2022.

Dynamics of van der Waals Charge Qubit in 2D Bilayers: Ab initio Quantum Transport and Qubit Measurement

Authors: Jiang Cao, Guido Gandus, Tarun Agarwal, Mathieu Luisier, Youseung Lee

Abstract: A van der Waals (vdW) charge qubit, electrostatically confined within two-dimensional (2D) vdW materials, is proposed as building block of future quantum computers. Its characteristics are systematically evaluated with respect to its two-level anti-crossing energy difference ($Δ$). Bilayer graphene ($Δ$ $\approx$ 0) and a vdW heterostructure ($Δ$ $\gg$ 0) are used as representative examples. Their… ▽ More A van der Waals (vdW) charge qubit, electrostatically confined within two-dimensional (2D) vdW materials, is proposed as building block of future quantum computers. Its characteristics are systematically evaluated with respect to its two-level anti-crossing energy difference ($Δ$). Bilayer graphene ($Δ$ $\approx$ 0) and a vdW heterostructure ($Δ$ $\gg$ 0) are used as representative examples. Their tunable electronic properties with an external electric field define the state of the charge qubit. By combining density functional theory and quantum transport calculations, we highlight the optimal qubit operation conditions based on charge stability and energy-level diagrams. Moreover, a single-electron transistor (SET) design based on trilayer vdW heterostructures capacitively coupled to the charge qubit is introduced as measurement setup with low decoherence and improved measurement properties. It is found that a $Δ$ greater than 20 meV results in a rapid mixing of the qubit states, which leads to a lower measurement quantity, i.e. contrast and conductance. With properly optimized designs, qubit architectures relying on 2D vdW structures could be integrated into an all-electronic quantum computing platform. △ Less

Submitted 13 October, 2022; originally announced October 2022.

Asymmetrical contact scaling and measurements in MoS2 FETs

Authors: Zhihui Cheng, Jonathan Backman, Huairuo Zhang, Hattan Abuzaid, Guoqing Li, Yifei Yu, Linyou Cao, Albert V. Davydov, Mathieu Luisier, Curt A. Richter, Aaron D. Franklin

Abstract: Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better scalability. Device scaling is the process of reducing all device dimensions to achieve higher device density in a certain chip area. For 2D materials-based transistors, both the channel and contact scalability must be… ▽ More Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better scalability. Device scaling is the process of reducing all device dimensions to achieve higher device density in a certain chip area. For 2D materials-based transistors, both the channel and contact scalability must be investigated. The channel scalability of 2D materials has been thoroughly investigated, confirming their resilience to short-channel effects. However, systematic studies on contact scalability remain rare and the current understanding of contact scaling in 2D FET is inconsistent and oversimplified. Here we combine physically scaled contacts and asymmetrical contact measurements to investigate the contact scaling behavior in 2D field-effect transistors (FETs). The asymmetrical contact measurements directly compare electron injection with different contact lengths while using the exact same channel, eliminating channel-to-channel variations. Compared to devices with long contact lengths, devices with short contact lengths (scaled contacts) exhibit larger variation, smaller drain currents at high drain-source voltages, and a higher chance of showing early saturation and negative differential resistance. Quantum transport simulations show that the transfer length of Ni-MoS2 contacts can be as short as 5 nm. Our results suggest that charge injection at the source contact is different from injection at the drain side: scaled source contacts can limit the drain current, whereas scaled drain contacts cannot. Furthermore, we clearly identified that the transfer length depends on the quality of the metal-2D interface. The asymmetrical contact measurements proposed here will enable further understanding of contact scaling behavior at various interfaces. △ Less

Submitted 24 September, 2022; v1 submitted 9 September, 2022; originally announced September 2022.

An Atomistic Modelling Framework for Valence Change Memory Cells

Authors: Manasa Kaniselvan, Mathieu Luisier, Marko Mladenović

Abstract: We present a framework dedicated to modelling the resistive switching operation of Valence Change Memory (VCM) cells. The method combines an atomistic description of the device structure, a Kinetic Monte Carlo (KMC) model for the creation and diffusion of oxygen vacancies in the central oxide under an external field, and an ab-initio quantum transport method to calculate electrical current and con… ▽ More We present a framework dedicated to modelling the resistive switching operation of Valence Change Memory (VCM) cells. The method combines an atomistic description of the device structure, a Kinetic Monte Carlo (KMC) model for the creation and diffusion of oxygen vacancies in the central oxide under an external field, and an ab-initio quantum transport method to calculate electrical current and conductance. As such, it reproduces a realistically stochastic device operation and its impact on the resulting conductance. We demonstrate this framework by simulating a switching cycle for a TiN/HfO$_2$/TiN VCM cell, and see a clear current hysteresis between high/low resistance states, with a conductance ratio of one order of magnitude. Additionally, we observe that the changes in conductance originate from the creation and recombination of vacancies near the active electrode, effectively modulating a tunnelling gap for the current. This framework can be used to further investigate the mechanisms behind resistive switching at an atomistic scale and optimize VCM material stacks and geometries. △ Less

Submitted 3 July, 2022; originally announced July 2022.

Comments: 4 pages, 5 figures. Submitted to Solid-State Electronics Special Issue: LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022

Efficient and accurate defect level modelling in monolayer MoS$_2$ via GW+DFT with open boundary conditions

Authors: Guido Gandus, Youseung Lee, Leonard Deuschle, Mathieu Luisier, Daniele Passerone

Abstract: Within the framework of many-body perturbation theory (MBPT) integrated with density functional theory (DFT), a novel defect-subspace projection GW method, the so-called p-GW, is proposed. By avoiding the periodic defect interference through open boundary self-energies, we show that the p-GW can efficiently and accurately describe quasi-particle correlated defect levels in two-dimensional (2D) mon… ▽ More Within the framework of many-body perturbation theory (MBPT) integrated with density functional theory (DFT), a novel defect-subspace projection GW method, the so-called p-GW, is proposed. By avoiding the periodic defect interference through open boundary self-energies, we show that the p-GW can efficiently and accurately describe quasi-particle correlated defect levels in two-dimensional (2D) monolayer MoS$_2$. By comparing two different defect states originating from sulfur vacancy and adatom to existing theoretical and experimental works, we show that our GW correction to the DFT defect levels is precisely modelled. Based on these findings, we expect that our method can provide genuine trap states for various 2D transition-metal dichalcogenide (TMD) monolayers, thus enabling the study of defect-induced effects on the device characteristics of these materials via realistic simulations. △ Less

Submitted 29 June, 2022; originally announced June 2022.

Ab initio simulation framework for Majorana transport in 2D materials: towards topological quantum computing

Authors: Y. Lee, T. Agarwal, M. Luisier

Abstract: We present an ab initio modeling framework to simulate Majorana transport in 2D semiconducting materials, paving the way for topological qubits based on 2D nanoribbons. By combining density-functional-theory and quantum transport calculations, we show that the signature of Majorana bound states (MBSs) can be found in 2D material systems as zero-energy modes with peaks in the local density-of-state… ▽ More We present an ab initio modeling framework to simulate Majorana transport in 2D semiconducting materials, paving the way for topological qubits based on 2D nanoribbons. By combining density-functional-theory and quantum transport calculations, we show that the signature of Majorana bound states (MBSs) can be found in 2D material systems as zero-energy modes with peaks in the local density-of-states. The influence of spin-orbit coupling and external magnetic fields on Majorana transport is studied for two relevant 2D materials, WSe2 and PbI2. To illustrate the capabilities of the proposed ab initio platform, a device structure capable of hosting MBSs is created from a PbI2 nanoribbon and carefully investigated. These results are compared to InSb nanowires and used to provide design guidelines for 2D topological qubits. △ Less

Submitted 30 October, 2021; originally announced November 2021.

Comments: 5 pages, 6 figures

Journal ref: Proc. of IEDM 2020, 30.3.1-30.3.4 (2020)

Performance Prediction of InP/GaAsSb Double Heterojunction Bipolar Transistors for THz applications

Authors: Xin Wen, Akshay Arabhavi, Wei Quan, Olivier Ostinelli, Chhandak Mukherjee, Marina Deng, Sébastien Frégonèse, Thomas Zimmer, Cristell Maneux, Colombo R. Bolognesi, Mathieu Luisier

Abstract: The intrinsic performance of "type-II" InP/GaAsSb double heterojunction bipolar transistors (DHBTs) towards and beyond THz is predicted and analyzed based on a multi-scale technology computer aided design (TCAD) modeling platform calibrated against experimental measurements. Two-dimensional hydrodynamic simulations are combined with 1-D full-band, atomistic quantum transport calculations to shed l… ▽ More The intrinsic performance of "type-II" InP/GaAsSb double heterojunction bipolar transistors (DHBTs) towards and beyond THz is predicted and analyzed based on a multi-scale technology computer aided design (TCAD) modeling platform calibrated against experimental measurements. Two-dimensional hydrodynamic simulations are combined with 1-D full-band, atomistic quantum transport calculations to shed light on future DHBT generations whose dimensions are decreased step-by-step, starting from the current device configuration. Simulations predict that a peak transit frequency $f_{T,peak}$ of around 1.6 THz could be reached in aggressively scaled type-II DHBTs with a total thickness of 256 nm and an emitter width $W_E$ of 37.5 nm. The corresponding breakdown voltage $BV_{CEO}$ is estimated to be 2.2 V. The investigations are put in perspective with two DHBT performance limiting factors, self-heating and breakdown characteristics. △ Less

Submitted 18 July, 2021; originally announced July 2021.

Comments: 10 pages, 11 figures

Journal ref: Journal of Applied Physics 130, 034502, 2021

Circuit-aware Device Modeling of Energy-efficient Monolayer WS$_2$ Trench-FinFETs

Authors: Tarun Agarwal, Youseung Lee, Mathieu Luisier

Abstract: The continuous scaling of semiconductor technology has pushed the footprint of logic devices below 50 nm. Currently, logic standard cells with one single fin are being investigated to increase the integration density, although such options could severely limit the performance of individual devices. In this letter, we present a novel Trench (T-) FinFET device, composed of a monolayer two-dimensiona… ▽ More The continuous scaling of semiconductor technology has pushed the footprint of logic devices below 50 nm. Currently, logic standard cells with one single fin are being investigated to increase the integration density, although such options could severely limit the performance of individual devices. In this letter, we present a novel Trench (T-) FinFET device, composed of a monolayer two-dimensional (2D) channel material. The device characteristics of a monolayer WS$_2$-based T-FinFET are studied by combining the first-principles calculations and quantum transport (QT) simulations. These results serve as inputs to a predictive analytical model. The latter allows to benchmark the T-FinFET with strained (s)-Si FinFETs in both quasi-ballistic and diffusive transport regimes. The circuit-level evaluation highlights that WS$_2$ T-FinFETs exhibit a competitive energy-delay performance compared to s-Si FinFET and WS$_2$ double-gate transistors, assuming the same mobility and contact resistivity at small footprints. △ Less

Submitted 16 April, 2021; originally announced April 2021.

Comments: 4 pages, 3 figures

Efficient partitioning of surface Green's function: toward ab initio contact resistance study

Authors: Guido Gandus, Youseung Lee, Daniele Passerone, Mathieu Luisier

Abstract: In this work, we propose an efficient computational scheme for first-principle quantum transport simulations to evaluate the open-boundary conditions. Its partitioning differentiates from conventional methods in that the contact self-energy matrices are constructed on smaller building blocks, principal layers (PL), while conventionally it was restricted to have the same lateral dimensions of the a… ▽ More In this work, we propose an efficient computational scheme for first-principle quantum transport simulations to evaluate the open-boundary conditions. Its partitioning differentiates from conventional methods in that the contact self-energy matrices are constructed on smaller building blocks, principal layers (PL), while conventionally it was restricted to have the same lateral dimensions of the adjoining atoms in a channel region. Here, we obtain the properties of bulk electrodes through non-equilibrium Green's function (NEGF) approach with significant improvements in the computational efficiency without sacrificing the accuracy of results. To exemplify the merits of the proposed method we investigate the carrier density dependency of contact resistances in silicon nanowire devices connected to bulk metallic contacts. △ Less

Submitted 29 December, 2020; originally announced December 2020.

Journal ref: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Ab initio simulation of band-to-band tunneling FETs with single- and few-layer 2-D materials as channels

Authors: Áron Szabó Cedric Klinkert, Davide Campi, Christian Stieger, Nicola Marzari, Mathieu Luisier

Abstract: Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling FETs (TFETs) with a 2-D channel material as future electronic circuit components. We demonstrate that single-layer (SL) transition metal dichalcogenides are not well suited for TFET applications. There might, however, exist a great variety of 2-D semiconductors… ▽ More Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling FETs (TFETs) with a 2-D channel material as future electronic circuit components. We demonstrate that single-layer (SL) transition metal dichalcogenides are not well suited for TFET applications. There might, however, exist a great variety of 2-D semiconductors that have not even been exfoliated yet; this paper pinpoints some of the most promising candidates among them to realize highly efficient TFETs. SL SnTe, As, TiNBr, and Bi are all found to ideally deliver ON-currents larger than 100μA/μm at 0.5-V supply voltage and 0.1 nA/μm OFF-current value. We show that going from single to multiple layers can boost the TFET performance as long as the gain from a narrowing bandgap exceeds the loss from the deteriorating gate control. Finally, a 2-D van der Waals heterojunction TFET is revealed to perform almost as well as the best SL homojunction, paving the way for research in optimal 2-D material combinations. △ Less

Submitted 8 December, 2020; originally announced December 2020.

Journal ref: IEEE Trans. on Elec. Dev. 66, 4180 - 4187 (2018)

Ab initio mobility of mono-layer MoS2 and WS2: comparison to experiments and impact on the device characteristics

Authors: Youseung Lee, Sara Fiore, Mathieu Luisier

Abstract: We combine the linearized Boltzmann Transport Equation (LBTE) and quantum transport by means of the Non-equilibrium Green's Functions (NEGF) to simulate single-layer MoS2 and WS2 ultra-scaled transistors with carrier mobilities extracted from experiments. Electron-phonon, charged impurity, and surface optical phonon scattering are taken into account with all necessary parameters derived from ab in… ▽ More We combine the linearized Boltzmann Transport Equation (LBTE) and quantum transport by means of the Non-equilibrium Green's Functions (NEGF) to simulate single-layer MoS2 and WS2 ultra-scaled transistors with carrier mobilities extracted from experiments. Electron-phonon, charged impurity, and surface optical phonon scattering are taken into account with all necessary parameters derived from ab initio calculations or measurements, except for the impurity concentration. The LBTE method is used to scale the scattering self-energies of NEGF, which only include local interactions. This ensures an accurate reproduction of the measured mobilities by NEGF. We then perform device simulations and demonstrate that the considered transistors operate far from their performance limit (from 50% for MoS2 to 60% for WS2). Higher quality materials and substrate engineering will be needed to improve the situation. △ Less

Submitted 10 October, 2020; originally announced October 2020.

Comments: 4 pages, 5 figures, In Proceedings of 2019 IEEE International Electron Devices Meeting (IEDM)

Journal ref: Proc. of IEDM 2019, 24.4.1-24.4.4 (2019)

Ab Initio Modeling of Thermal Transport through van der Waals Materials

Authors: Sara Fiore, Mathieu Luisier

Abstract: An advanced modeling approach is presented to shed light on the thermal transport properties of van der Waals materials (vdWMs) composed of single-layer transition metal dichalcogenides (TMDs) stacked on top of each other with a total or partial overlap only in the middle region. It relies on the calculation of dynamical matrices from first-principle and on their usage in a phonon quantum transpor… ▽ More An advanced modeling approach is presented to shed light on the thermal transport properties of van der Waals materials (vdWMs) composed of single-layer transition metal dichalcogenides (TMDs) stacked on top of each other with a total or partial overlap only in the middle region. It relies on the calculation of dynamical matrices from first-principle and on their usage in a phonon quantum transport simulator. We observe that vibrations are transferred microscopically from one layer to the other along the overlap region which acts as a filter selecting out the states that can pass through it. Our work emphasizes the possibility of engineering heat flows at the nanoscale by carefully selecting the TMD monolayers that compose vdWMs. △ Less

Submitted 6 October, 2020; originally announced October 2020.

Comments: 14 pages, 11 figures, 6 tables

Journal ref: Phys. Rev. Materials 4, 094005 (2020)

On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices

Authors: Theresia Knobloch, Yury Yu. Illarionov, Fabian Ducry, Christian Schleich, Stefan Wachter, Thomas Müller, Michael Waltl, Mario Lanza, Mikhail I. Vexler, Mathieu Luisier, Tibor Grasser

Abstract: Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimate scaling limit place the utmost demands on the properties of all materials involved. The requirements for semiconductors are well explored and could possibly be satisfied by a number of layered two-dimensional (2D) materials, like for example transition-metal dichalcogenides or black phosphorus. The requirements for the g… ▽ More Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimate scaling limit place the utmost demands on the properties of all materials involved. The requirements for semiconductors are well explored and could possibly be satisfied by a number of layered two-dimensional (2D) materials, like for example transition-metal dichalcogenides or black phosphorus. The requirements for the gate insulator are arguably even more challenging and difficult to meet. In particular the combination of insulator to semiconductor which forms the central element of the metal oxide semiconductor field effect transistor (MOSFET) has to be of superior quality in order to build competitive devices. At the moment, hexagonal boron nitride (hBN) is the most common two-dimensional insulator and widely considered to be the most promising gate insulator in nanoscaled 2D material-based transistors. Here, we critically assess the material parameters of hBN and conclude that while its properties render hBN an ideal candidate for many applications in 2D nanoelectronics, hBN is most likely not suitable as a gate insulator for ultrascaled CMOS devices. △ Less

Submitted 10 August, 2020; originally announced August 2020.

Comments: 10 pages, 4 figures

Journal ref: Nat. Electron. 4 (2021) 98-108

Quantum mechanical modeling of anharmonic phonon-phonon scattering in nanostructures

Authors: Yangyu Guo, Marc Bescond, Zhongwei Zhang, Mathieu Luisier, Masahiro Nomura, Sebastian Volz

Abstract: The coherent quantum effect becomes increasingly important in the heat dissipation bottleneck of semiconductor nanoelectronics with the characteristic size shrinking down to few nano-meters scale nowadays. However, the quantum mechanical model remains elusive for anharmonic phonon-phonon scattering in extremely small nanostructures with broken translational symmetry. It is a long-term challenging… ▽ More The coherent quantum effect becomes increasingly important in the heat dissipation bottleneck of semiconductor nanoelectronics with the characteristic size shrinking down to few nano-meters scale nowadays. However, the quantum mechanical model remains elusive for anharmonic phonon-phonon scattering in extremely small nanostructures with broken translational symmetry. It is a long-term challenging task to correctly simulate quantum heat transport including anharmonic scattering at a scale relevant to practical applications. In this article, we present a clarified theoretical formulation of anharmonic phonon non-equilibrium Green function (NEGF) formalism for both 1D and 3D nanostructures, through a diagrammatic perturbation expansion and an introduction of Fourier representation to both harmonic and anharmonic terms. A parallelized computational framework with first-principle force constants input is developed for large-scale quantum heat transport simulation. Some crucial approximations in numerical implementation are investigated to ensure the balance between numerical accuracy and efficiency. A quantitative validation is demonstrated for the anharmonic phonon NEGF formalism and computational framework by modeling cross-plane heat transport through silicon thin film. The phonon-phonon scattering is shown to be appreciable and to introduce about 20% reduction of thermal conductivity at room temperature even for a film thickness around 10 nm. The present methodology provides a robust platform for the device quantum thermal modeling, as well as the study on the transition from coherent to incoherent heat transport in nano-phononic crystals. This work thus paves the way to understand and to manipulate heat conduction via the wave nature of phonons. △ Less

Submitted 28 July, 2020; originally announced July 2020.

Comments: 47 pages, 16 figures

Journal ref: Phys. Rev. B 102, 195412 (2020)

2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope

Authors: Cedric Klinkert, Áron Szabó, Christian Stieger, Davide Campi, Nicola Marzari, Mathieu Luisier

Abstract: Thanks to their unique properties single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal dichalcogenides, are still far from delivering the expected performance. Based on a recent theoretical study that predicts the existence of more tha… ▽ More Thanks to their unique properties single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal dichalcogenides, are still far from delivering the expected performance. Based on a recent theoretical study that predicts the existence of more than 1,800 exfoliable 2-D materials, we investigate here the 100 most promising contenders for logic applications. Their "current vs. voltage" characteristics are simulated from first-principles, combining density-functional theory and advanced quantum transport calculations. Both n- and p-type configurations are considered, with gate lengths ranging from 15 down to 5 nm. From this unprecedented collection of electronic materials, we identify 13 compounds with electron and hole currents potentially much higher than in future Si FinFETs. The resulting database widely expands the design space of 2-D transistors and provides original guidelines to the materials and device engineering community. △ Less

Submitted 9 April, 2020; originally announced April 2020.

First-principles calculations for ferroelectrics at constant polarization using generalized Wannier functions

Authors: Pawel Lenarczyk, Mathieu Luisier

Abstract: Localized Wannier functions provide an efficient and intuitive framework to compute electric polarization from first-principles. They can also be used to represent the electronic systems at fixed electric field and to determine dielectric properties of insulating materials. Here we develop a Wannier-function-based formalism to perform first-principles calculations at fixed polarization. Such an ap… ▽ More Localized Wannier functions provide an efficient and intuitive framework to compute electric polarization from first-principles. They can also be used to represent the electronic systems at fixed electric field and to determine dielectric properties of insulating materials. Here we develop a Wannier-function-based formalism to perform first-principles calculations at fixed polarization. Such an approach allows to extract the polarization-energy landscape of a crystal and thus supports the theoretical investigation of polar materials. To facilitate the calculations, we implement a quasi-Newton method that simultaneously relaxes the internal coordinates and adjusts the electric field in crystals at fixed polarization. The method is applied to study the ferroelectric behavior of $\mathrm{BaTiO_3}$ and $\mathrm{PbTiO_3}$ in tetragonal phases. The physical processes driving the ferroelectricity of both compounds are examined thanks to the localized orbital picture offered by Wannier functions. Hence, changes in chemical bonding under ferroelectric distortion can be accurately visualized. The difference in the ferroelectric properties of $\mathrm{BaTiO_3}$ and $\mathrm{PbTiO_3}$ is highlighted. It can be traced back to the peculiarities of their electronic structures. △ Less

Submitted 26 January, 2020; originally announced January 2020.

Electron transport through metal/MoS2 interfaces: edge- or area-dependent process?

Authors: Aron Szabo, Achint Jain, Markus Parzefall, Lukas Novotny, Mathieu Luisier

Abstract: In ultra-thin two-dimensional (2-D) materials, the formation of ohmic contacts with top metallic layers is a challenging task that involves different processes than in bulk-like structures. Besides the Schottky barrier height, the transfer length of electrons between metals and 2-D monolayers is a highly relevant parameter. For MoS$_2$, both short ($\le$30 nm) and long ($\ge$0.5 $μ$m) values have… ▽ More In ultra-thin two-dimensional (2-D) materials, the formation of ohmic contacts with top metallic layers is a challenging task that involves different processes than in bulk-like structures. Besides the Schottky barrier height, the transfer length of electrons between metals and 2-D monolayers is a highly relevant parameter. For MoS$_2$, both short ($\le$30 nm) and long ($\ge$0.5 $μ$m) values have been reported, corresponding to either an abrupt carrier injection at the contact edge or a more gradual transfer of electrons over a large contact area. Here we use \textit{ab initio} quantum transport simulations to demonstrate that the presence of an oxide layer between a metallic contact and a MoS$_2$ monolayer, for example TiO$_2$ in case of titanium electrodes, favors an area-dependent process with a long transfer length, while a perfectly clean metal-semiconductor interface would lead to an edge process. These findings reconcile several theories that have been postulated about the physics of metal/MoS$_2$ interfaces and provide a framework to design future devices with lower contact resistances. △ Less

Submitted 10 December, 2019; originally announced December 2019.

Journal ref: Nano Lett. 2019, 19, 6, 3641-3647

First-principles approach to electric polarization and dielectric constant calculations using generalized Wannier functions

Authors: Pawel Lenarczyk, Mathieu Luisier

Abstract: We describe a method to calculate the electronic properties of an insulator under an applied electric field. It is based on the minimization of an electric enthalpy functional with respect to the orbitals, which behave as Wannier functions under crystal translations, but are not necessarily orthogonal. This paper extends the approach of Nunes and Vanderbilt (NV) [Phys. Rev. Lett. 73, 712 (1994)],… ▽ More We describe a method to calculate the electronic properties of an insulator under an applied electric field. It is based on the minimization of an electric enthalpy functional with respect to the orbitals, which behave as Wannier functions under crystal translations, but are not necessarily orthogonal. This paper extends the approach of Nunes and Vanderbilt (NV) [Phys. Rev. Lett. 73, 712 (1994)], who demonstrated that a Wannier function representation can be used to study insulating crystals in the presence of a finite electric field. According to a study by Fernández et al. [Phys. Rev. B. 58, R7480 (1998)], first-principles implementations of the NV approach suffer from the impact of the localization constraint on the orthogonal wave functions, what affects the accuracy of the physical results. We show that because non-orthogonal generalized Wannier functions can be more localized than their orthogonal counterparts, the error due to localization constraints is reduced, thus improving the accuracy of the calculated physical quantities. △ Less

Submitted 20 October, 2019; originally announced October 2019.

Charge Transport in Semiconductors Assembled from Nanocrystals

Authors: Nuri Yazdani, Samuel Andermatt, Maksym Yarema, Vasco Farto, Mohammad Hossein Bani-Hashemian, Sebastian Volk, Weyde Lin, Olesya Yarema, Mathieu Luisier, Vanessa Wood

Abstract: The potential of semiconductors assembled from nanocrystals (NC semiconductors) has been demonstrated for a broad array of electronic and optoelectronic devices, including transistors, light emitting diodes, solar cells, photodetectors, thermoelectrics, and phase charge memory cells. Despite the commercial success of nanocrystals as optical absorbers and emitters, applications involving charge tra… ▽ More The potential of semiconductors assembled from nanocrystals (NC semiconductors) has been demonstrated for a broad array of electronic and optoelectronic devices, including transistors, light emitting diodes, solar cells, photodetectors, thermoelectrics, and phase charge memory cells. Despite the commercial success of nanocrystals as optical absorbers and emitters, applications involving charge transport through NC semiconductors have eluded exploitation due to the inability for predictive control of their electronic properties. Here, we perform large-scale, ab-initio simulations to understand carrier transport, generation, and trapping in NC-based semiconductors from first principles. We use these findings to build the first predictive model for charge transport in NC semiconductors, which we validate experimentally. Our work reveals that we have been thinking about transport in NC semiconductors incorrectly. Our new insights provide a path for systematic engineering of NC semiconductors, which in fact offer previously unexplored opportunities for tunability not achievable in other semiconductor systems. △ Less

Submitted 6 January, 2020; v1 submitted 20 September, 2019; originally announced September 2019.

Comments: 4 figures at the bottom of document

Lithiation-delithiation cycles of amorphous Si nanowires investigated by molecular dynamics simulations

Authors: Julien Godet, Teute Bunjaku, Mathieu Luisier

Abstract: The atomistic mechanisms during lithiation and delithiation of amorphous Si nanowires ($a$-SiNW) have been investigated over cycles by molecular dynamics simulations. First, the Modified Embedded Atom Method (MEAM) potential from Cui et al. [J. Power Sources. 2012, (207) 150] has been further optimized on static (Li$_x$Si alloy phases and point defect energies) and on dynamic properties (Li diffus… ▽ More The atomistic mechanisms during lithiation and delithiation of amorphous Si nanowires ($a$-SiNW) have been investigated over cycles by molecular dynamics simulations. First, the Modified Embedded Atom Method (MEAM) potential from Cui et al. [J. Power Sources. 2012, (207) 150] has been further optimized on static (Li$_x$Si alloy phases and point defect energies) and on dynamic properties (Li diffusion) to reproduce the lithiation of small crystalline Si nanowires calculated at the {\it ab initio} level. The lithiation of $a$-SiNW reveals a two-phase process of lithiation with a larger diffusion interface compared to crystalline Si lithiation. Compressive axial stresses are observed in the amorphous Si$_x$Li alloy outer shell. They are easily released thanks to the soft glassy behavior of the amorphous alloy. Conversely, in crystalline SiNW, the larger stress in the narrow crystalline lithiated interface is hardly released and requires a phase transformation to amorphous to operate, which delays the lithiation. The history of the charge-discharge cycles as well as the temperature appear as driving forces for phase transformation from amorphous Li$_x$Si alloy to the more stable crystalline phase counterpart. Our work suggest that a full delithiation could heal the SiNWs to improve the life cycles of Li-ion batteries with Si anode. △ Less

Submitted 7 September, 2019; originally announced September 2019.

Comments: 11 pages, 8 figures,

Journal ref: Phys. Rev. Materials 4, 065402 (2020)

One-dimensional edge contacts to a monolayer semiconductor

Authors: Achint Jain, Áron Szabó, Markus Parzefall, Eric Bonvin, Takashi Taniguchi, Kenji Watanabe, Palash Bharadwaj, Mathieu Luisier, Lukas Novotny

Abstract: Integration of electrical contacts into van der Waals (vdW) heterostructures is critical for realizing electronic and optoelectronic functionalities. However, to date no scalable methodology for gaining electrical access to buried monolayer two-dimensional (2D) semiconductors exists. Here we report viable edge contact formation to hexagonal boron nitride (hBN) encapsulated monolayer MoS$_2$. By co… ▽ More Integration of electrical contacts into van der Waals (vdW) heterostructures is critical for realizing electronic and optoelectronic functionalities. However, to date no scalable methodology for gaining electrical access to buried monolayer two-dimensional (2D) semiconductors exists. Here we report viable edge contact formation to hexagonal boron nitride (hBN) encapsulated monolayer MoS$_2$. By combining reactive ion etching, in situ Ar$^+$ sputtering and annealing, we achieve a relatively low edge contact resistance, high mobility (up to ~30 cm$^2$/Vs) and high on-current density (>50 uA/um at V$_{\rm DS}$ = 3V), comparable to top contacts. Furthermore, the atomically smooth hBN environment also preserves the intrinsic MoS$_2$ channel quality during fabrication, leading to a steep subthreshold swing of 116 mV/dec with a negligible hysteresis. Hence, edge contacts are highly promising for large-scale practical implementation of encapsulated heterostructure devices, especially those involving air sensitive materials, and can be arbitrarily narrow, which opens the door to further shrinkage of 2D device footprint. △ Less

Submitted 17 October, 2019; v1 submitted 14 February, 2019; originally announced February 2019.

Comments: Supplementary Information file included

Journal ref: Nano Letters 19, 6914-6923 (2019)

Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials

Authors: Christian Stieger, Aron Szabo, Teute Bunjaku, Mathieu Luisier

Abstract: Through advanced quantum mechanical simulations combining electron and phonon transport from first-principles self-heating effects are investigated in n-type transistors with a single-layer MoS2, WS2, and black phosphorus as channel materials. The selected 2-D crystals all exhibit different phonon-limited mobility values, as well as electron and phonon properties, which has a direct influence on t… ▽ More Through advanced quantum mechanical simulations combining electron and phonon transport from first-principles self-heating effects are investigated in n-type transistors with a single-layer MoS2, WS2, and black phosphorus as channel materials. The selected 2-D crystals all exhibit different phonon-limited mobility values, as well as electron and phonon properties, which has a direct influence on the increase of their lattice temperature and on the power dissipated inside their channel as a function of the applied gate voltage and electrical current magnitude. This computational study reveals (i) that self-heating plays a much more important role in 2-D materials than in Si nanowires, (ii) that it could severely limit the performance of 2-D devices at high current densities, and (iii) that black phosphorus appears less sensitive to this phenomenon than transition metal dichalcogenides. △ Less

Submitted 5 December, 2018; originally announced December 2018.

Pushing Back the Limit of Ab-initio Quantum Transport Simulations on Hybrid Supercomputers

Authors: Mauro Calderara, Sascha Brueck, Andreas Pedersen, Mohammad H. Bani-Hashemian, Joost VandeVondele, Mathieu Luisier

Abstract: The capabilities of CP2K, a density-functional theory package and OMEN, a nano-device simulator, are combined to study transport phenomena from first-principles in unprecedentedly large nanostructures. Based on the Hamiltonian and overlap matrices generated by CP2K for a given system, OMEN solves the Schroedinger equation with open boundary conditions (OBCs) for all possible electron momenta and e… ▽ More The capabilities of CP2K, a density-functional theory package and OMEN, a nano-device simulator, are combined to study transport phenomena from first-principles in unprecedentedly large nanostructures. Based on the Hamiltonian and overlap matrices generated by CP2K for a given system, OMEN solves the Schroedinger equation with open boundary conditions (OBCs) for all possible electron momenta and energies. To accelerate this core operation a robust algorithm called SplitSolve has been developed. It allows to simultaneously treat the OBCs on CPUs and the Schroedinger equation on GPUs, taking advantage of hybrid nodes. Our key achievements on the Cray-XK7 Titan are (i) a reduction in time-to-solution by more than one order of magnitude as compared to standard methods, enabling the simulation of structures with more than 50000 atoms, (ii) a parallel efficiency of 97% when scaling from 756 up to 18564 nodes, and (iii) a sustained performance of 15 DP-PFlop/s. △ Less

Submitted 4 December, 2018; originally announced December 2018.

Thermal Properties of Disordered LixMoS2 - An Ab-Initio Study

Authors: Teutë Bunjaku, Mathieu Luisier

Abstract: An atomistic study of the thermal properties of lithiated molybdenum disulfide (MoS2) is presented and an explanation for the experimentally determined anisotropic behavior of the in- and through-plane thermal conductivity is proposed. Configurations with different levels of lithium concentration are simulated using Density Functional Theory (DFT) and their structural, electronic, and thermal tran… ▽ More An atomistic study of the thermal properties of lithiated molybdenum disulfide (MoS2) is presented and an explanation for the experimentally determined anisotropic behavior of the in- and through-plane thermal conductivity is proposed. Configurations with different levels of lithium concentration are simulated using Density Functional Theory (DFT) and their structural, electronic, and thermal transport properties are evaluated as a function of the degree of lithiation. Comparisons between regular and disordered lithium distributions as well as to the experimental data reveal that the measured ratio of the in-plane to through-plane thermal conductivity can only be reproduced if the disorder of the lithium ions is taken into account. These results suggest that it is not only possible to modify the thermal properties of MoS2 by changing the degree of lithiation, but also by controlling its level of disorder. △ Less

Submitted 19 November, 2018; originally announced November 2018.

Comments: 25 pages, 10 figures

Journal ref: Phys. Rev. Materials 3, 034001 (2019)

Electronic Properties of Lithiated SnO-based Anode Materials

Authors: Dominik Bauer, Teute Bunjaku, Andreas Pedersen, Mathieu Luisier

Abstract: In this paper we use an ab-initio quantum transport approach to study the electron current flowing through lithiated SnO anodes for potential applications in Li-ion batteries. By investigating a set of lithiated structures with varying lithium concentrations, it is revealed that LixSnO can be a good conductor, with values comparable to bulk $β$-Sn and Li. A deeper insight into the current distribu… ▽ More In this paper we use an ab-initio quantum transport approach to study the electron current flowing through lithiated SnO anodes for potential applications in Li-ion batteries. By investigating a set of lithiated structures with varying lithium concentrations, it is revealed that LixSnO can be a good conductor, with values comparable to bulk $β$-Sn and Li. A deeper insight into the current distribution indicates that electrons preferably follow specific trajectories, which offer superior conducting properties than others. These channels have been identified and it is shown here how they can enhance or deteriorate the current flow in lithiated anode materials. △ Less

Submitted 25 April, 2018; originally announced April 2018.

Journal ref: Journal of Applied Physics 122, 055105 (2017)

Light from van der Waals quantum tunneling devices

Authors: Markus Parzefall, Áron Szabó, Takashi Taniguchi, Kenji Watanabe, Mathieu Luisier, Lukas Novotny

Abstract: The understanding of and control over light emission from quantum tunneling has challenged researchers for more than four decades due to the intricate interplay of electrical and optical properties in atomic scale volumes. Here we introduce a device architecture that allows for the disentanglement of electronic and photonic pathways - van der Waals quantum tunneling devices. The electronic propert… ▽ More The understanding of and control over light emission from quantum tunneling has challenged researchers for more than four decades due to the intricate interplay of electrical and optical properties in atomic scale volumes. Here we introduce a device architecture that allows for the disentanglement of electronic and photonic pathways - van der Waals quantum tunneling devices. The electronic properties are defined by a stack of two-dimensional atomic crystals whereas the optical properties are controlled via an external photonic architecture. In van der Waals heterostructure made of gold, hexagonal boron nitride and graphene we find that inelastic tunneling results in the emission of photons and surface plasmon polaritons. By coupling these heterostructures to optical nanocube antennas we achieve resonant enhancement of the photon emission rate in narrow frequency bands by four orders of magnitude. Our results lead the way towards a new generation of nanophotonic devices that are driven by quantum tunneling. △ Less

Submitted 19 January, 2019; v1 submitted 17 April, 2018; originally announced April 2018.

Comments: for Supplementary Information, see https://www.nature.com/articles/s41467-018-08266-8#Sec14

Journal ref: Nature Communications 10, 292 (2019)

Ab-initio Modeling of CBRAM Cells: from Ballistic Transport Properties to Electro-Thermal Effects

Authors: Fabian Ducry, Alexandros Emboras, Samuel Andermatt, Mohammad Hossein Bani-Hashemian, Bojun Cheng, Juerg Leuthold, Mathieu Luisier

Abstract: We present atomistic simulations of conductive bridging random access memory (CBRAM) cells from first-principles combining density-functional theory and the Non-equilibrium Green's Function formalism. Realistic device structures with an atomic-scale filament connecting two metallic contacts have been constructed. Their transport properties have been studied in the ballistic limit and in the presen… ▽ More We present atomistic simulations of conductive bridging random access memory (CBRAM) cells from first-principles combining density-functional theory and the Non-equilibrium Green's Function formalism. Realistic device structures with an atomic-scale filament connecting two metallic contacts have been constructed. Their transport properties have been studied in the ballistic limit and in the presence of electron-phonon scattering, showing good agreement with experimental data. It has been found that the relocation of few atoms is sufficient to change the resistance of the CBRAM by 6 orders of magnitude, that the electron trajectories strongly depend on the filament morphology, and that self-heating does not affect the device performance at currents below 1 $μ$A. △ Less

Submitted 29 November, 2017; originally announced December 2017.

Comments: 6 figures, conference

Influence of the Surface of a Nanocrystal on its Electronic and Phononic Properties

Authors: Nuri Yazdani, Deniz Bozyigit, Kantawong Vuttivorakulchai, Mathieu Luisier, Vanessa Wood

Abstract: Over the past thirty years, it has been consistently observed that surface engineering of colloidal nanocrystals (NC) is key to their performance parameters. In the case of lead chalcogenide NCs, for example, replacing thiols with halide anion surface termination has been shown to increase power conversion efficiency in NC-based solar cells. To gain insight into the origins of these improvements,… ▽ More Over the past thirty years, it has been consistently observed that surface engineering of colloidal nanocrystals (NC) is key to their performance parameters. In the case of lead chalcogenide NCs, for example, replacing thiols with halide anion surface termination has been shown to increase power conversion efficiency in NC-based solar cells. To gain insight into the origins of these improvements, we perform ab initio molecular dynamics (AIMD) on experimentally-relevant sized lead sulfide (PbS) NCs constructed with thiol or Cl, Br, and I anion surfaces. The surface of both the thiol- and halide-terminated NCs exhibit low and high-energy phonon modes with large thermal displacements not present in bulk PbS; however, halide anion surface termination reduces the overlap of the electronic wavefunctions with these vibration modes. These findings suggest that electron-phonon interactions will be reduced in the halide terminated NCs, a conclusion that is supported by analyzing the time-dependent evolution of the electronic energies and wavefunctions extracted from the AIMD. This work explains why electron-phonon interactions are crucial to charge carrier dynamics in NCs and how surface engineering can be applied to systematically control their electronic and phononic properties. Furthermore, we propose that the computationally efficient approach of gauging electron-phonon interaction implemented here can be used to guide the design of application-specific surface terminations for arbitrary nanomaterials. △ Less

Submitted 29 November, 2016; originally announced November 2016.

Journal ref: Nano Lett., 2018, 18, 4, 2233-2242

Diffusion Mechanisms in Li$_{0.5}$CoO$_2$ -- A Computational Study

Authors: Teutë Bunjaku, Andreas Pedersen, Mathieu Luisier

Abstract: An atomistic study of the order-effect occurring in Li$_{x}$CoO$_{2}$ at $x=0.5$ is presented and an explanation for the computationally and experimentally observed dip in the Li diffusivity is proposed. Configurations where a single half-filled Li layer arranged in either a linear or a zig-zag pattern are simulated. It is found that the lowest energy phase is the zig-zag pattern rather than the l… ▽ More An atomistic study of the order-effect occurring in Li$_{x}$CoO$_{2}$ at $x=0.5$ is presented and an explanation for the computationally and experimentally observed dip in the Li diffusivity is proposed. Configurations where a single half-filled Li layer arranged in either a linear or a zig-zag pattern are simulated. It is found that the lowest energy phase is the zig-zag pattern rather than the linear arrangement that currently is considered to be of lowest energy. Atomic interactions are modeled at the DFT level of accuracy and energy barriers for Li-ion diffusion are determined from searches for first order saddle points on the resulting potential energy surface. The determined saddle points reveal that the barriers for diffusion parallel and perpendicular to the zig-zag phase differ significantly and explain the observed dip in diffusivity. △ Less

Submitted 23 November, 2015; v1 submitted 16 November, 2015; originally announced November 2015.

Comments: 17 pages, 7 figures

Compositional bowing of band energies and their deformation potentials in strained InGaAs ternary alloys: a first-principles study

Authors: Petr A. Khomyakov, Mathieu Luisier, Andreas Schenk

Abstract: Using first-principles calculations, we show that the conduction and valence band energies and their deformation potentials exhibit a non-negligible compositional bowing in strained ternary semiconductor alloys such as InGaAs. The electronic structure of these compounds has been calculated within the framework of local density approximation and hybrid functional approach for large cubic supercells… ▽ More Using first-principles calculations, we show that the conduction and valence band energies and their deformation potentials exhibit a non-negligible compositional bowing in strained ternary semiconductor alloys such as InGaAs. The electronic structure of these compounds has been calculated within the framework of local density approximation and hybrid functional approach for large cubic supercells and special quasi-random structures, which represent two kinds of model structures for random alloys. We find that the predicted bowing effect for the band energy deformation potentials is rather insensitive to the choice of the functional and alloy structural model. The direction of bowing is determined by In cations that give a stronger contribution to the formation of the In$_{x}$Ga$_{1-x}$As valence band states with $x\gtrsim 0.5$, compared to Ga cations. △ Less

Submitted 25 August, 2015; v1 submitted 21 May, 2015; originally announced May 2015.

Comments: 9 pages, 4 figures, and 2 tables

Journal ref: Appl. Phys. Lett. 107, 062104 (2015)

Lithiation of Tin Oxide: A Computational Study

Authors: Andreas Pedersen, Mathieu Luisier

Abstract: We suggest that the lithiation of pristine SnO forms a layered Li$_\text{X}$O structure while the expelled tin atoms agglomerate into 'surface' planes separating the Li$_\text{X}$O layers. The proposed lithiation model widely differs from the common assumption that tin segregates into nano-clusters embedded in the lithia matrix. With this model we are able to account for the various tin bonds that… ▽ More We suggest that the lithiation of pristine SnO forms a layered Li$_\text{X}$O structure while the expelled tin atoms agglomerate into 'surface' planes separating the Li$_\text{X}$O layers. The proposed lithiation model widely differs from the common assumption that tin segregates into nano-clusters embedded in the lithia matrix. With this model we are able to account for the various tin bonds that are seen experimentally and explain the three volume expansion phases that occur when SnO undergoes lithiation: (i) at low concentrations Li behaves as an intercalated species inducing small volume increases; (ii) for intermediate concentrations SnO transforms into lithia causing a large expansion; (iii) finally, as the Li concentration further increases a saturation of the lithia takes place until a layered Li$_2$O is formed. A moderate volume expansion results from this last process. We also report a 'zipper' nucleation mechanism that could provide the seed for the transformation from tin oxide to lithium oxide. △ Less

Submitted 16 March, 2015; originally announced March 2015.

Comments: 21 pages, 6 figures

Journal ref: ACS Applied Materials and Interfaces, 2014, 6, 22257-22263

The reversible lithiation of SnO: a three-phase process

Authors: Andreas Pedersen, Petr A. Khomyakov, Mathieu Luisier

Abstract: A high reversible capacity is a key feature for any rechargeable battery. In the lithium-ion battery technology, tin-oxide anodes do fulfill this requirement, but a fast loss of capacity hinders a full commercialization. Using first-principles calculations, we propose a microscopic model that sheds light on the reversible lithiation/delithiation of SnO and reveals that a sintering of Sn causes a s… ▽ More A high reversible capacity is a key feature for any rechargeable battery. In the lithium-ion battery technology, tin-oxide anodes do fulfill this requirement, but a fast loss of capacity hinders a full commercialization. Using first-principles calculations, we propose a microscopic model that sheds light on the reversible lithiation/delithiation of SnO and reveals that a sintering of Sn causes a strong degradation of SnO-based anodes. When the initial irreversible transformation ends, active anode grains consist of Li-oxide layers separated by Sn bilayers. During the following reversible lithiation, the Li-oxide undergoes two phase transformations that give rise to a Li-enrichment of the oxide and the formation of a layered SnLi composite. We find that the model-predicted anode volume expansion and voltage profile agree well with experiment, and a layered anode grain is highly-conductive and has a theoretical reversible capacity of 4.5 Li atoms per a SnO host unit. The model suggests that the grain structure has to remain layered to sustain its reversible capacity and a thin-film design of battery anodes could be a remedy for the capacity loss. △ Less

Submitted 8 May, 2015; v1 submitted 4 February, 2015; originally announced February 2015.

Comments: 11 pages, 3 figures

Journal ref: Phys. Rev. Applied 4, 034005 (2015)

Giant Quasiparticle Bandgap Modulation in Graphene Nanoribbons Supported on Weakly Interacting Surfaces

Authors: Xueping Jiang, Neerav Kharche, Paul Kohl, Timothy B. Boykin, Gerhard Klimeck, Mathieu Luisier, Pulickel M. Ajayan, Saroj K. Nayak

Abstract: In general, there are two major factors affecting bandgaps in nanostructures: (i) the enhanced electron-electron interactions due to confinement and (ii) the modified self-energy of electrons due to the dielectric screening. While recent theoretical studies on graphene nanoribbons (GNRs) report on the first effect, the effect of dielectric screening from the surrounding materials such as substrate… ▽ More In general, there are two major factors affecting bandgaps in nanostructures: (i) the enhanced electron-electron interactions due to confinement and (ii) the modified self-energy of electrons due to the dielectric screening. While recent theoretical studies on graphene nanoribbons (GNRs) report on the first effect, the effect of dielectric screening from the surrounding materials such as substrates has not been thoroughly investigated. Using large-scale electronic structure calculations based on the GW approach, we show that when GNRs are deposited on substrates, bandgaps get strongly suppressed (by as much as 1 eV) even though the GNR-substrate interaction is weak. △ Less

Submitted 12 September, 2013; originally announced September 2013.

Journal ref: Appl. Phys. Lett. 103 , 133107 (2013)

Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors

Authors: SungGeun Kim, Mathieu Luisier, Timothy B. Boykin, Gerhard Klimeck

Abstract: The effects of an atomistic interface roughness in n-type silicon nanowire transistors (SiNWT) on the radio frequency performance are analyzed. Interface roughness scattering (IRS) is statistically investigated through a three dimensional full-band quantum transport simulation based on the sp3d5s?* tight-binding model. As the diameter of the SiNWT is scaled down below 3 nm, IRS causes a significan… ▽ More The effects of an atomistic interface roughness in n-type silicon nanowire transistors (SiNWT) on the radio frequency performance are analyzed. Interface roughness scattering (IRS) is statistically investigated through a three dimensional full-band quantum transport simulation based on the sp3d5s?* tight-binding model. As the diameter of the SiNWT is scaled down below 3 nm, IRS causes a significant reduction of the cut-off frequency. The fluctuations of the conduction band edge due to the rough surface lead to a reflection of electrons through mode-mismatch. This effect reduces the velocity of electrons and hence the transconductance considerably causing a cut-off frequency reduction. △ Less

Submitted 14 November, 2011; originally announced November 2011.

Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires

Authors: Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck

Abstract: The effect of geometrical confinement, atomic position and orientation of Silicon nanowires (SiNWs) on their thermal properties are investigated using the phonon dispersion obtained using a Modified Valence Force Field (MVFF) model. The specific heat ($C_{v}$) and the ballistic thermal conductance ($κ^{bal}_{l}$) shows anisotropic variation with changing cross-section shape and size of the SiNWs.… ▽ More The effect of geometrical confinement, atomic position and orientation of Silicon nanowires (SiNWs) on their thermal properties are investigated using the phonon dispersion obtained using a Modified Valence Force Field (MVFF) model. The specific heat ($C_{v}$) and the ballistic thermal conductance ($κ^{bal}_{l}$) shows anisotropic variation with changing cross-section shape and size of the SiNWs. The $C_{v}$ increases with decreasing cross-section size for all the wires. The triangular wires show the largest $C_{v}$ due to their highest surface-to-volume ratio. The square wires with [110] orientation show the maximum $κ^{bal}_{l}$ since they have the highest number of conducting phonon modes. At the nano-scale a universal scaling law for both $C_{v}$ and $κ^{bal}_{l}$ are obtained with respect to the number of atoms in the unit cell. This scaling is independent of the shape, size and orientation of the SiNWs revealing a direct correlation of the lattice thermal properties to the atomistic properties of the nanowires. Thus, engineering the SiNW cross-section shape, size and orientation open up new ways of tuning the thermal properties at the nanometer regime. △ Less

Submitted 11 August, 2011; originally announced August 2011.

Comments: 11 figures, 4 tables, submitted to JAP