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Condensed Matter > Materials Science

arXiv:2207.01095 (cond-mat)
[Submitted on 3 Jul 2022]

Title:An Atomistic Modelling Framework for Valence Change Memory Cells

Authors:Manasa Kaniselvan, Mathieu Luisier, Marko Mladenović
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Abstract:We present a framework dedicated to modelling the resistive switching operation of Valence Change Memory (VCM) cells. The method combines an atomistic description of the device structure, a Kinetic Monte Carlo (KMC) model for the creation and diffusion of oxygen vacancies in the central oxide under an external field, and an ab-initio quantum transport method to calculate electrical current and conductance. As such, it reproduces a realistically stochastic device operation and its impact on the resulting conductance. We demonstrate this framework by simulating a switching cycle for a TiN/HfO$_2$/TiN VCM cell, and see a clear current hysteresis between high/low resistance states, with a conductance ratio of one order of magnitude. Additionally, we observe that the changes in conductance originate from the creation and recombination of vacancies near the active electrode, effectively modulating a tunnelling gap for the current. This framework can be used to further investigate the mechanisms behind resistive switching at an atomistic scale and optimize VCM material stacks and geometries.
Comments: 4 pages, 5 figures. Submitted to Solid-State Electronics Special Issue: LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2207.01095 [cond-mat.mtrl-sci]
  (or arXiv:2207.01095v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2207.01095
Related DOI: https://doi.org/10.1016/j.sse.2022.108506

Submission history

From: Manasa Kaniselvan [view email]
[v1] Sun, 3 Jul 2022 18:44:48 UTC (4,784 KB)
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