Showing 1–11 of 11 results for author: Leung, C W

Ultrahigh-temperature ferromagnetism in ultrathin insulating films with ripple-infinite-layer structure

Authors: Yazhuo Yi, Haoliang Huang, Ruiwen Shao, Yukuai Liu, Guangzheng Chen, Jiahui Ou, Xi Zhang, Ze Hua, Lang Chen, Chi Wah Leung, Xie-Rong Zeng, Feng Rao, Nan Liu, Heng Wang, Liang Si, Hongyu An, Zhuoyu Chen, Chuanwei Huang

Abstract: Ferromagnetism and electrical insulation are often at odds, signifying an inherent trade off. The simultaneous optimization of both in one material, essential for advancing spintronics and topological electronics, necessitates the individual manipulation over various degrees of freedom of strongly correlated electrons. Here, by selective control of the spin exchange and Coulomb interactions, we re… ▽ More Ferromagnetism and electrical insulation are often at odds, signifying an inherent trade off. The simultaneous optimization of both in one material, essential for advancing spintronics and topological electronics, necessitates the individual manipulation over various degrees of freedom of strongly correlated electrons. Here, by selective control of the spin exchange and Coulomb interactions, we report the achievement of SrFeO2 thin films with resistivity above 106 Ohm.cm and strong magnetization with Curie temperature extrapolated to be 1200 K. Robust ferromagnetism is obtained down to 1.0 nm thickness on substrate and 2.0 nm for freestanding films. Featuring an out of plane oriented ripple infinite layer structure, this ferromagnetic insulating phase is obtained through extensive reduction of as grown brownmillerite SrFeO2.5 films at high compressive strains. Pronounced spin Hall magnetoresistance signals up to 0.0026 is further demonstrated with a Pt Hall bar device. Our findings promise emerging spintronic and topological electronic functionalities harnessing spin dynamics with minimized power dissipations. △ Less

Submitted 6 December, 2024; originally announced December 2024.

Strong magnon-magnon coupling in an ultralow damping all-magnetic-insulator heterostructure

Authors: Jiacheng Liu, Yuzan Xiong, Jingming Liang, Xuezhao Wu, Chen Liu, Shun Kong Cheung, Zheyu Ren, Ruizi Liu, Andrew Christy, Zehan Chen, Ferris Prima Nugraha, Xi-Xiang Zhang, Chi Wah Leung, Wei Zhang, Qiming Shao

Abstract: Magnetic insulators such as yttrium iron garnets (YIGs) are of paramount importance for spin-wave or magnonic devices as their ultralow damping enables ultralow power dissipation that is free of Joule heating, exotic magnon quantum state, and coherent coupling to other wave excitations. Magnetic insulator heterostructures bestow superior structural and magnetic properties and house immense design… ▽ More Magnetic insulators such as yttrium iron garnets (YIGs) are of paramount importance for spin-wave or magnonic devices as their ultralow damping enables ultralow power dissipation that is free of Joule heating, exotic magnon quantum state, and coherent coupling to other wave excitations. Magnetic insulator heterostructures bestow superior structural and magnetic properties and house immense design space thanks to the strong and engineerable exchange interaction between individual layers. To fully unleash their potential, realizing low damping and strong exchange coupling simultaneously is critical, which often requires high quality interface. Here, we show that such a demand is realized in an all-insulator thulium iron garnet (TmIG)/YIG bilayer system. The ultralow dissipation rates in both YIG and TmIG, along with their significant spin-spin interaction at the interface, enable strong and coherent magnon-magnon coupling with a benchmarking cooperativity value larger than the conventional ferromagnetic metal-based heterostructures. The coupling strength can be tuned by varying the magnetic insulator layer thickness and magnon modes, which is consistent with analytical calculations and micromagnetic simulations. Our results demonstrate TmIG/YIG as a novel platform for investigating hybrid magnonic phenomena and open opportunities in magnon devices comprising all-insulator heterostructures. △ Less

Submitted 6 September, 2023; originally announced September 2023.

Comments: 45 pages, 18 figures, and 2 tables

Microwave heating as a universal method to transform confined molecules into armchair graphene nanoribbons

Authors: Haoyuan Zhang, Yingzhi Chen, Kunpeng Tang, Ziheng Lin, Xuan Li, Hongwei Zhang, Yifan Zhang, Takeshi Saito, Chi Ho Wong, Chi Wah Leung, Chee Leung Mak, Yuan Hu, Weili Cui, Kecheng Cao, Lei Shi

Abstract: Armchair graphene nanoribbons (AGNRs) with sub-nanometer width are potential materials for fabrication of novel nanodevices thanks to their moderate direct band gaps. AGNRs are usually synthesized by polymerizing precursor molecules on substrate surface. However, it is time-consuming and not suitable for large-scale production. AGNRs can also be grown by transforming precursor molecules inside sin… ▽ More Armchair graphene nanoribbons (AGNRs) with sub-nanometer width are potential materials for fabrication of novel nanodevices thanks to their moderate direct band gaps. AGNRs are usually synthesized by polymerizing precursor molecules on substrate surface. However, it is time-consuming and not suitable for large-scale production. AGNRs can also be grown by transforming precursor molecules inside single-walled carbon nanotubes via furnace annealing, but the obtained AGNRs are normally twisted. In this work, microwave heating is applied for transforming precursor molecules into AGNRs. The fast heating process allows synthesizing the AGNRs in seconds. Several different molecules were successfully transformed into AGNRs, suggesting that it is a universal method. More importantly, as demonstrated by Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy and theoretical calculations, less twisted AGNRs are synthesized by the microwave heating than the furnace annealing. Our results reveal a route for rapid production of AGNRs in large scale, which would benefit future applications in novel AGNRs-based semiconductor devices. △ Less

Submitted 24 January, 2023; originally announced January 2023.

Comments: 7 pages, 7 figures

Simulation of environmental impacts on the synthesis of carbyne with more than 6000 atoms for emerging continuously tunable energy barriers in CNT-based transistors

Authors: Chi Ho Wong, Yan Ming Yeung, Xin Zhao, Wing Cheung Law, Chak-yin Tang, Chee Leung Mak, Chi Wah Leung, Lei Shi, Rolf Lortz

Abstract: Transistors made up of carbon nanotubes CNT have demonstrated excellent current-voltage characteristics which outperform some high-grade silicon-based transistors. A continuously tunable energy barrier across semiconductor interfaces is desired to make the CNT-based transistors more robust. Despite the direct band gap of carbyne inside a CNT can be widely tuned by strain, the size of carbyne canno… ▽ More Transistors made up of carbon nanotubes CNT have demonstrated excellent current-voltage characteristics which outperform some high-grade silicon-based transistors. A continuously tunable energy barrier across semiconductor interfaces is desired to make the CNT-based transistors more robust. Despite the direct band gap of carbyne inside a CNT can be widely tuned by strain, the size of carbyne cannot be controlled easily. The production of a monoatomic chain with more than 6000 carbon atoms is an enormous technological challenge. To predict the optimal chain length of a carbyne in different molecular environments, we have developed a Monte Carlo model in which a finite-length carbyne with a size of 4000-15000 atoms is encapsulated by a CNT at finite temperatures. Our simulation shows that the stability of the carbyne@nanotube is strongly influenced by the nature and porosity of the CNT, the external pressure, the temperature and the chain length. We have observed an initiation of chain-breaking process in a compressed carbyne@nanotube. Our work provides much needed input for optimising the carbyne length to produce carbon chains much longer than 6000 atoms at ~300K. Design rules are proposed for synthesizing ~1% strained carbyne@(6,5)CNT as a component in CNT-based transistors to tune the energy barriers continuously. △ Less

Submitted 19 January, 2023; originally announced January 2023.

Comments: arXiv admin note: substantial text overlap with arXiv:2207.14558

The effectiveness of data augmentation in porous substrate, nanowire, fiber and tip images at the level of deep learning intelligence

Authors: C. H. Wong, S. M. Ng, C. W. Leung, A. F. Zatsepin

Abstract: To prepare for identifying the composition of nanowire-fiber mixtures in Scanning Electron Microscope (SEM) images, we optimize the performance of image classification between nanowires, fibers and tips due to their geometric similarities. The SEM images are analyzed by deep learning techniques where the validation accuracies of 11 convolutional neural network (CNN) models are compared. By increas… ▽ More To prepare for identifying the composition of nanowire-fiber mixtures in Scanning Electron Microscope (SEM) images, we optimize the performance of image classification between nanowires, fibers and tips due to their geometric similarities. The SEM images are analyzed by deep learning techniques where the validation accuracies of 11 convolutional neural network (CNN) models are compared. By increasing the diversity of data such as reflection, translation and scale factor approaches, the highest validation accuracy of recognizing nanowires, fibers and tips is 97.1%. We proceed to classify the level of porosity in anodized aluminum oxide for the self-assisted nanowire growth where the validation accuracy is optimized at 93%. Our software allow scientists to count the percentage of fibers in any nanowire-fiber composite and design the porous substrate for embedding different sizes of nanowires automatically, which assists the software development in Nanoscience Foundries & Fine Analysis (NFFA) Europe Projects. △ Less

Submitted 11 March, 2021; originally announced March 2021.

High-temperature Anomalous Hall Effect in Transition Metal Dichalcogenide-Ferromagnetic Insulator Heterostructure

Authors: Sheung Mei Ng, Hui Chao Wang, Yu Kuai Liu, Hon Fai Wong, Hei Man Yau, Chun Hung Suen, Ze Han Wu, Chi Wah Leung, Ji Yan Dai

Abstract: Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe2 thin film using heterostructure approach by depositing it on ferrimagnetic insulator YIG (Y3Fe5O12, yttrium iron garnet) is demonstrated. In this hete… ▽ More Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe2 thin film using heterostructure approach by depositing it on ferrimagnetic insulator YIG (Y3Fe5O12, yttrium iron garnet) is demonstrated. In this heterostructure, significant anomalous Hall effect can be observed at temperatures up to at least 400 K, which is a record high temperature for the observation of AHE in TMDs, and the large RAHE is more than one order of magnitude larger than those previously reported value in topological insulators or TMDs based heterostructures. The magnetization of interfacial reaction-induced ZrO2 between YIG and ZrTe2 is believed to play a crucial role for the induced high-temperature anomalous Hall effect in the ZrTe2. These results reveal a promising system for the room-temperature spintronic device applications, and it may also open a new avenue toward introducing magnetism to TMDs and exploring the quantum AHE at higher temperatures considering the prediction of nontrivial topology in ZrTe2. △ Less

Submitted 27 February, 2020; originally announced February 2020.

Unification of bulk and interface electroresistive switching in oxide systems

Authors: A. Ruotolo, C. W. Leung, C. Y. Lam, W. F. Cheng, K. H. Wong, G. P. Pepe

Abstract: We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearran… ▽ More We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region. △ Less

Submitted 1 June, 2008; v1 submitted 20 May, 2008; originally announced May 2008.

Comments: 4 pages, 3 figures, accepted in PRB

High-quality all-oxide Schottky junctions fabricated on heavily Nb-doped SrTiO3 substrates

Authors: A. Ruotolo, C. Y. Lam, W. F. Cheng, K. H. Wong, C. W. Leung

Abstract: We present a detailed investigation of the electrical properties of epitaxial La0.7Sr0.3MnO3/SrTi0.98Nb0.02O3 Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconduct… ▽ More We present a detailed investigation of the electrical properties of epitaxial La0.7Sr0.3MnO3/SrTi0.98Nb0.02O3 Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 10^20 cm^(-3). Moreover, the junctions show hysteretic current-voltage characteristics. △ Less

Submitted 14 June, 2007; v1 submitted 12 June, 2007; originally announced June 2007.

Comments: 10 pages, 9 figures

Controlling the exchange interaction using the spin-flip transition of antiferromagnetic spins in Ni$_{81}$Fe$_{19}$ / $α$-Fe$_2$O$_3$

Authors: Joonghoe Dho, C. W. Leung, Z. H. Barber, M. G. Blamire

Abstract: We report studies of exchange bias and coercivity in ferromagnetic Ni$_{81}$Fe$_{19}$ layers coupled to antiferromagnetic (AF) (0001), (11$\bar{2}$0), and (11$\bar{0}$2) $α$-Fe$_2$O$_3$ layers. We show that AF spin configurations which permit spin-flop coupling give rise to a strong uniaxial anisotropy and hence a large coercivity, and that by annealing in magnetic fields parallel to specific di… ▽ More We report studies of exchange bias and coercivity in ferromagnetic Ni$_{81}$Fe$_{19}$ layers coupled to antiferromagnetic (AF) (0001), (11$\bar{2}$0), and (11$\bar{0}$2) $α$-Fe$_2$O$_3$ layers. We show that AF spin configurations which permit spin-flop coupling give rise to a strong uniaxial anisotropy and hence a large coercivity, and that by annealing in magnetic fields parallel to specific directions in the AF we can control either coercivity or exchange bias. In particular, we show for the first time that a reversible temperature-induced spin reorientation in the AF can be used to control the exchange interaction. △ Less

Submitted 10 November, 2004; originally announced November 2004.

Comments: 15 pages, 5 figures, submitted to Phys. Rev. Lett

Controllable Josephson current through a pseudo-spin-valve structure

Authors: C. Bell, G. Burnell, C. W. Leung, E. J. Tarte, D. -J. Kang, M. G. Blamire

Abstract: A thin Co/Cu/Permalloy (Ni$_{80}$Fe$_{20}$) pseudo-spin-valve structure is sandwiched between superconducting Nb contacts. When the current is passed perpendicular to the plane of the film a Josephson critical current ($I_C$) is observed at 4.2 K, in addition to a magnetoresistance (MR) of $\sim$ 0.5 % at high bias. The hysteresis loop of the spin-valve structure can be cycled to modulate the ze… ▽ More A thin Co/Cu/Permalloy (Ni$_{80}$Fe$_{20}$) pseudo-spin-valve structure is sandwiched between superconducting Nb contacts. When the current is passed perpendicular to the plane of the film a Josephson critical current ($I_C$) is observed at 4.2 K, in addition to a magnetoresistance (MR) of $\sim$ 0.5 % at high bias. The hysteresis loop of the spin-valve structure can be cycled to modulate the zero field $I_C$ of the junction in line with the MR measurements. These modulations of resistance and $I_C$ occur both smoothly and sharply with the applied field. For each type of behaviour there is a strong correlation between shape of the MR loops and the $I_C$ modulation. △ Less

Submitted 18 September, 2003; originally announced September 2003.

Comments: 3 pages, 4 figures, (submitted to Appl. Phys. Lett.)

Proximity and Josephson effects in superconductor - antiferromagnetic Nb / γ-Fe50Mn50 heterostructures

Authors: C. Bell, E. J. Tarte, G. Burnell, C. W. Leung, D. -J. Kang, M. G. Blamire

Abstract: We study the proximity effect in superconductor (S), antiferromagnetic (AF) bilayers, and report the fabrication and measurement of the first trilayer S/AF/S Josephson junctions. The disordered f.c.c. alloy γ-Fe50Mn50 was used as the AF, and the S is Nb. Micron and sub-micron scale junctions were measured, and the scaling of $J_C (d_AF)$ gives a coherence length in the AF of 2.4 nm, which correl… ▽ More We study the proximity effect in superconductor (S), antiferromagnetic (AF) bilayers, and report the fabrication and measurement of the first trilayer S/AF/S Josephson junctions. The disordered f.c.c. alloy γ-Fe50Mn50 was used as the AF, and the S is Nb. Micron and sub-micron scale junctions were measured, and the scaling of $J_C (d_AF)$ gives a coherence length in the AF of 2.4 nm, which correlates with the coherence length due to suppression of $T_C$ in the bilayer samples. The diffusion constant for FeMn was found to be 1.7 \times 10$^{-4}$ m$^2$ s$^-1$, and the density of states at the Fermi level was also obtained. An exchange biased FeMn/Co bilayer confirms the AF nature of the FeMn in this thickness regime. △ Less

Submitted 12 September, 2003; originally announced September 2003.

Comments: 6 pages, 5 figures, accepted for Phys. Rev. B