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Condensed Matter > Strongly Correlated Electrons

arXiv:0805.3159 (cond-mat)
[Submitted on 20 May 2008 (v1), last revised 1 Jun 2008 (this version, v3)]

Title:Unification of bulk and interface electroresistive switching in oxide systems

Authors:A. Ruotolo, C. W. Leung, C. Y. Lam, W. F. Cheng, K. H. Wong, G. P. Pepe
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Abstract: We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region.
Comments: 4 pages, 3 figures, accepted in PRB
Subjects: Strongly Correlated Electrons (cond-mat.str-el); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:0805.3159 [cond-mat.str-el]
  (or arXiv:0805.3159v3 [cond-mat.str-el] for this version)
  https://doi.org/10.48550/arXiv.0805.3159
Related DOI: https://doi.org/10.1103/PhysRevB.77.233103

Submission history

From: Antonio Ruotolo [view email]
[v1] Tue, 20 May 2008 20:03:50 UTC (775 KB)
[v2] Mon, 26 May 2008 15:54:37 UTC (862 KB)
[v3] Sun, 1 Jun 2008 16:56:46 UTC (862 KB)
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