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Tunneling magnetoresistance in ensembles of ferromagnetic granules with exchange interaction and random easy axes of magnetic anisotropy
Authors:
Y. M. Beltukov,
V. I. Kozub,
A. V. Shumilin,
N. P. Stepina
Abstract:
We study the tunneling magnetoresistance in the ensembles of ferromagnetic granules with random easy axes of magnetic anisotropy taking into account the exchange interaction between granules. It is shown that due to the exchange interaction magnetoresistance is effectively decoupled from magnetization, i.e. the strongest negative magnetoresistance can be observed at the field where magnetization i…
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We study the tunneling magnetoresistance in the ensembles of ferromagnetic granules with random easy axes of magnetic anisotropy taking into account the exchange interaction between granules. It is shown that due to the exchange interaction magnetoresistance is effectively decoupled from magnetization, i.e. the strongest negative magnetoresistance can be observed at the field where magnetization is almost saturated. Under some conditions, the sign of magnetoresistance can be reversed and tunneling magnetoresistance can become positive at certain magnetic fields. Our theory agrees with measurements of magnetoresistance in ensembles of Fe granules in SiCxNy matrix.
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Submitted 13 December, 2020;
originally announced December 2020.
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Electric bias-controlled switching of magnetization of ferrimagnetically coupled Mn delta-layers in a GaAs-AlGaAs quantum well
Authors:
N. V. Agrinskaya,
A. M. Kalashnikova,
V. I. Kozub
Abstract:
We suggest a model of synthetic ferrimagnetic semiconductor structure based on GaAs-AlGaAs quantum well doped by two Mn delta-layers. The coupling between the delta-layers is mediated by extra holes, and can be switched between ferro- and antiferromagnetic one by gating the structure. A proper choice of Mn concentrations in the delta-layers and of local degree of disorder enables fabrication of a…
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We suggest a model of synthetic ferrimagnetic semiconductor structure based on GaAs-AlGaAs quantum well doped by two Mn delta-layers. The coupling between the delta-layers is mediated by extra holes, and can be switched between ferro- and antiferromagnetic one by gating the structure. A proper choice of Mn concentrations in the delta-layers and of local degree of disorder enables fabrication of a ferrimagnetic structure supporting ultrafast switching of magnetization by short pulses of electric bias without an external magnetic field. The switching mechanism in the structure relies on kinetic spin exchange between the two delta-layers which is mediated by exchange scattering of electric-pulse heated holes by magnetic ions within the layers. Owing to specific interplay between characteristics of the exchange scattering, spin decay times, and the heat withdraw in the suggested synthetic ferrimagnetic semiconductor, the necessary parameters of electric-bias pulse are within the technologically accessible range, and do not contradict typical thermal kinetics of semiconductor structures.
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Submitted 12 February, 2020; v1 submitted 18 July, 2019;
originally announced July 2019.
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Coulomb blockade-tuned indirect exchange in ferromagnetic nanostructures
Authors:
V. I. Kozub,
Y. M. Galperin,
V. M. Vinokur
Abstract:
We develop a theory of the reversible switching of the magnetic state of the ferromagnet-insulator-normal metalferromagnet (FINF) nanostructure. The switching is controlled by tuning the Coulomb blockade strength via the gate voltage on the normal metal granule. The proposed mechanism allows for realizing the switching without passing a dissipative current through the structure.
We develop a theory of the reversible switching of the magnetic state of the ferromagnet-insulator-normal metalferromagnet (FINF) nanostructure. The switching is controlled by tuning the Coulomb blockade strength via the gate voltage on the normal metal granule. The proposed mechanism allows for realizing the switching without passing a dissipative current through the structure.
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Submitted 5 July, 2018;
originally announced July 2018.
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Electron drag in ferromagnetic structures separated by an insulating interface
Authors:
V. I. Kozub,
M. I. Muradov,
Y. M. Galperin
Abstract:
We consider electron drag in a system of two ferromagnetic layers separated by an insulating interface. The source of it is expected to be magnon-electron interactions. Namely, we assume that the external voltage is applied to the "active" layer stimulating electric current through this layer. In its turn, the scattering of the current-carrying electrons by magnons leads to a magnon drag current w…
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We consider electron drag in a system of two ferromagnetic layers separated by an insulating interface. The source of it is expected to be magnon-electron interactions. Namely, we assume that the external voltage is applied to the "active" layer stimulating electric current through this layer. In its turn, the scattering of the current-carrying electrons by magnons leads to a magnon drag current within this layer. The 3-magnons interactions between magnons in the two layers (being of non-local nature) lead to magnon drag within the "passive" layer which, correspondingly, produce electron drag current via processes of magnon-electron scattering. We estimate the drag current and compare it to the phonon-induced one.
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Submitted 15 February, 2018;
originally announced February 2018.
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Temperature-dependent disorder and magnetic field driven disorder: experimental observations for doped GaAs/AlGaAs quantum well structures
Authors:
N. V. Agrinskaya,
V. A. Berezovets,
V. I. Kozub
Abstract:
We report experimental studies of conductance and magnetoconductance of GaAs/AlGaAs quantum well structures where both wells and barriers are doped by acceptor impurity Be. Temperature dependence of conductance demonstrate a non-monotonic behavior at temperatures around 100 K. At small temperatures (less than 10 K) we observed strong negative magnetoresistance at moderate magnetic field which cros…
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We report experimental studies of conductance and magnetoconductance of GaAs/AlGaAs quantum well structures where both wells and barriers are doped by acceptor impurity Be. Temperature dependence of conductance demonstrate a non-monotonic behavior at temperatures around 100 K. At small temperatures (less than 10 K) we observed strong negative magnetoresistance at moderate magnetic field which crossed over to positive magnetoresistance at very strong magnetic fields and was completely suppressed with an increase of temperature. We ascribe these unusual features to effects of temperature and magnetic field on a degree of disorder. The temperature dependent disorder is related to charge redistribution between different localized states with an increase of temperature. The magnetic field dependent disorder is also related by charge redistribution between different centers, however in this case an important role is played by the doubly occupied states of the upper Hubbard band, their occupation being sensitive to magnetic field due to on-site spin correlations. The detailed theoretical model is present.
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Submitted 9 December, 2015;
originally announced December 2015.
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Giant magnetoresistance for ensembles of ferromagnetic granules in variable range hopping conductivity regime
Authors:
V. I. Kozub,
A. V. Shumilin
Abstract:
We study an effect of moderate magnetic field on variable range hopping conductivity in arrays of ferromagnetic granules separated by tunnel barriers. It is shown that the resulting magnetoresistance can be significantly larger than the standard "giant" magnetoresistance in Fe-N-Fe-N... multilayers. The effect is related to a gain in densities of states available for the virtual processes within t…
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We study an effect of moderate magnetic field on variable range hopping conductivity in arrays of ferromagnetic granules separated by tunnel barriers. It is shown that the resulting magnetoresistance can be significantly larger than the standard "giant" magnetoresistance in Fe-N-Fe-N... multilayers. The effect is related to a gain in densities of states available for the virtual processes within the intermediate granules due to magnetic-field induced alignment of the granule magnetizations.
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Submitted 13 February, 2014;
originally announced February 2014.
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Low temperature transport properties of multigraphene structures on 6H-SiC obtained by thermal graphitization: evidences of a presence of nearly perfect graphene layer
Authors:
A. A. Lebedev,
N. V. Agrinskaya,
V. A. Beresovets,
V. I. Kozub,
S. P. Lebedev,
A. A. Sitnikova
Abstract:
Transport properties of multigraphene layers on 6H-SiC substrates fabricated by thermal graphitization of SiC were studied. The principal result is that these structures were shown to contain a nearly perfect graphene layer situated between the SiC substrate and multgraphene layer. It was found that the curves of magnetoresistance and Shubnikov- de Haas oscillations shown the features, typical for…
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Transport properties of multigraphene layers on 6H-SiC substrates fabricated by thermal graphitization of SiC were studied. The principal result is that these structures were shown to contain a nearly perfect graphene layer situated between the SiC substrate and multgraphene layer. It was found that the curves of magnetoresistance and Shubnikov- de Haas oscillations shown the features, typical for single-layered graphene. The low temperature resistance demonstrated an increase with temperature increase, which also corresponds to a behavior typical for single-layered graphene (antilocalization). However at higher temperatures the resistance decreased with an increase of temperature, which corresponds to a weak localization. We believe that the observed behavior can be explained by a parallel combination of contributions to the conductivity of single-layered graphene and of multigraphene, the latter allowing to escape damages of the graphene by atmosphere effect.
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Submitted 18 December, 2012;
originally announced December 2012.
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The Ioffe-Regel criterion and diffusion of vibrations in random lattices
Authors:
Y. M. Beltukov,
V. I. Kozub,
D. A. Parshin
Abstract:
We consider diffusion of vibrations in 3d harmonic lattices with strong force-constant disorder. Above some frequency w_IR, corresponding to the Ioffe-Regel crossover, notion of phonons becomes ill defined. They cannot propagate through the system and transfer energy. Nevertheless most of the vibrations in this range are not localized. We show that they are similar to diffusons introduced by Allen…
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We consider diffusion of vibrations in 3d harmonic lattices with strong force-constant disorder. Above some frequency w_IR, corresponding to the Ioffe-Regel crossover, notion of phonons becomes ill defined. They cannot propagate through the system and transfer energy. Nevertheless most of the vibrations in this range are not localized. We show that they are similar to diffusons introduced by Allen, Feldman et al., Phil. Mag. B 79, 1715 (1999) to describe heat transport in glasses. The crossover frequency w_IR is close to the position of the boson peak. Changing strength of disorder we can vary w_IR from zero value (when rigidity is zero and there are no phonons in the lattice) up to a typical frequency in the system. Above w_IR the energy in the lattice is transferred by means of diffusion of vibrational excitations. We calculated the diffusivity of the modes D(w) using both the direct numerical solution of Newton equations and the formula of Edwards and Thouless. It is nearly a constant above w_IR and goes to zero at the localization threshold. We show that apart from the diffusion of energy, the diffusion of particle displacements in the lattice takes place as well. Above w_IR a displacement structure factor S(q,w) coincides well with a structure factor of random walk on the lattice. As a result the vibrational line width Gamma(q)=D_u q^2 where D_u is a diffusion coefficient of particle displacements. Our findings may have important consequence for the interpretation of experimental data on inelastic x-ray scattering and mechanisms of heat transfer in glasses.
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Submitted 7 February, 2013; v1 submitted 8 October, 2012;
originally announced October 2012.
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Interference mechanism of magnetoresistance in variable range hopping conduction: the effect of paramagnetic electron spins and continuous spectrum of scatterer energies
Authors:
A. V. Shumilin,
V. I. Kozub
Abstract:
Despite the fact that the problem of interference mechanism of magnetoresistance in semiconductors with hopping conductivity was widely discussed, most of existing studies were focused on the model of spinless electrons. This model can be justified only when all electron spins are frozen. However there is always an admixture of free spins in the semiconductor.
This study presents the theory of i…
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Despite the fact that the problem of interference mechanism of magnetoresistance in semiconductors with hopping conductivity was widely discussed, most of existing studies were focused on the model of spinless electrons. This model can be justified only when all electron spins are frozen. However there is always an admixture of free spins in the semiconductor.
This study presents the theory of interference contribution to magnetoresistance that explicitly includes effects of both frozen and free electron spins. We consider the cases of small and large number of scatterers in the hopping event. For the case of large number of scatterers the approach is used that takes into account the dispersion of the scatterer energies. We compare our results with existing experimental data.
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Submitted 10 January, 2012;
originally announced January 2012.
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Suppression of the virtual Anderson transition in a narrow impurity band of doped quantum well structures
Authors:
N. V. Agrinskaya,
V. I. Kozub,
D. S. Poloskin
Abstract:
Earlier we reported an observation at low temperatures of activation conductivity with small activation energies in strongly doped uncompensated layers of p-GaAs/AlGaAs quantum wells. We attributed it to Anderson delocalization of electronic states in the vicinity of the maximum of the narrow impurity band. A possibility of such delocalization at relatively small impurity concentration is related…
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Earlier we reported an observation at low temperatures of activation conductivity with small activation energies in strongly doped uncompensated layers of p-GaAs/AlGaAs quantum wells. We attributed it to Anderson delocalization of electronic states in the vicinity of the maximum of the narrow impurity band. A possibility of such delocalization at relatively small impurity concentration is related to the small width of the impurity band characterized by weak disorder. In this case the carriers were activated from the "bandtail" while its presence was related to weak background compensation. Here we study an effect of the extrinsic compensation and of the impurity concentration on this "virtual" Anderson transition. It was shown that an increase of compensation initially does not affect the Anderson transition, however at strong compensations the transition is suppressed due to increase of disorder. In its turn, an increase of the dopant concentration initially leads to a suppression of the transition due an increase of disorder, the latter resulting from a partial overlap of the Hubbard bands. However at larger concentration the conductivity becomes to be metallic due to Mott transition.
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Submitted 31 August, 2011;
originally announced August 2011.
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Slow relaxations of magnetoresistance in AlGaAs-GaAs quantum well structures quenched in a magnetic field
Authors:
N. V. Agrinskaya,
V. I. Kozub,
D. V. Shamshur,
A. V. Shumilin,
Y. M. Galperin
Abstract:
We observed a slow relaxation of magnetoresistance in response to applied magnetic field in selectively doped p-GaAs-AlGaAs structures with partially filled upper Hubbard band. We have paid a special attention to exclude the effects related to temperature fluctuations. Though this effect is important, we have found that the general features of slow relaxation still persist. This behavior is inte…
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We observed a slow relaxation of magnetoresistance in response to applied magnetic field in selectively doped p-GaAs-AlGaAs structures with partially filled upper Hubbard band. We have paid a special attention to exclude the effects related to temperature fluctuations. Though this effect is important, we have found that the general features of slow relaxation still persist. This behavior is interpreted as related to the properties of the Coulomb glass formed by charged centers with account of spin correlations, which are sensitive to an external magnetic field. Variation of the magnetic field changes numbers of impurity complexes of different types. As a result, it effects the shape and depth of the polaron gap formed at the states belonging to the percolation cluster responsible for the conductance. The suggested model explains both the qualitative behavior and the order of magnitude of the slowly relaxing magnetoresistance.
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Submitted 5 March, 2010;
originally announced March 2010.
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Magnetoresistance in semiconductor structures with hopping conductivity: effects of random potential and generalization for the case of acceptor states
Authors:
N. V. Agrinskaya,
V. I. Kozub,
A. V. Shumilin,
E. Sobko
Abstract:
We reconsider the theory of magnetoresistance in hopping semiconductors. First, we have shown that the random potential of the background impurities affects significantly preexponential factor of the tunneling amplitude which becomes to be a short-range one in contrast to the long-range one for purely Coulomb hopping centers. This factor to some extent suppresses the negative interference magnet…
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We reconsider the theory of magnetoresistance in hopping semiconductors. First, we have shown that the random potential of the background impurities affects significantly preexponential factor of the tunneling amplitude which becomes to be a short-range one in contrast to the long-range one for purely Coulomb hopping centers. This factor to some extent suppresses the negative interference magnetoresistance and can lead to its decrease with temperature decrease which is in agreement with earlier experimental observations. We have also extended the theoretical models of positive spin magnetoresistance, in particular, related to a presence of doubly occupied states (corresponding to the upper Hubbard band) to the case of acceptor states in 2D structures. We have shown that this mechanism can dominate over classical wave-shrinkage magnetoresistance at low temperatures. Our results are in semi-quantitative agreement with experimental data.
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Submitted 25 February, 2010;
originally announced February 2010.
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Comment on "Weak localization in GaMnAs: evidence of impurity band transport" by L. P. Rokhinson et. al. (Phys. Rev. B, 76, 161201 R; arXivCond-mat:0707.2416)
Authors:
N. V. Agrinskaya,
V. I. Kozub
Abstract:
We suggest that negative magnetoresistance in small magnetic fields at temperatures lower than 3 K reported in the paper under discussion may be related to superconducting transition in In leads (with Tc = 3.4 K).
We suggest that negative magnetoresistance in small magnetic fields at temperatures lower than 3 K reported in the paper under discussion may be related to superconducting transition in In leads (with Tc = 3.4 K).
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Submitted 3 December, 2009;
originally announced December 2009.
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Slow relaxation of magnetoresistance in doped p -GaAs/AlGaAs layers with partially filled upper Hubbard band
Authors:
N. V. Agrinskaya,
V. I. Kozub,
D. V. Shamshur,
A. Shumilin
Abstract:
We observed slow relaxation of magnetoresistance in quantum well structures GaAs-AlGaAs with a selective doping of both wells and barrier regions which allowed partial filling of the upper Hubbard band. Such a behavior is explained as related to magnetic-field driven redistribution of the carriers between sites with different occupation numbers due to spin correlation on the doubly occupied cent…
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We observed slow relaxation of magnetoresistance in quantum well structures GaAs-AlGaAs with a selective doping of both wells and barrier regions which allowed partial filling of the upper Hubbard band. Such a behavior is explained as related to magnetic-field driven redistribution of the carriers between sites with different occupation numbers due to spin correlation on the doubly occupied centers. This redistribution, in its turn, leads to slow multi-particle relaxations in the Coulomb glass formed by the charged centers.
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Submitted 30 October, 2008;
originally announced October 2008.
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Electron-phonon Interaction in Non-polar Quantum Dots Induced by the Amorphous Polar Environment
Authors:
A. N. Poddubny,
S. V. Goupalov,
V. I. Kozub,
I. N. Yassievich
Abstract:
We propose a mechanism of energy relaxation for carriers confined in a non-polar quantum dot surrounded by an amorphous polar environment. The carrier transitions are due to their interaction with the oscillating electric field induced by the local vibrations in the surrounding amorphous medium. We demonstrate that this mechanism controls energy relaxation for electrons in Si nanocrystals embedd…
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We propose a mechanism of energy relaxation for carriers confined in a non-polar quantum dot surrounded by an amorphous polar environment. The carrier transitions are due to their interaction with the oscillating electric field induced by the local vibrations in the surrounding amorphous medium. We demonstrate that this mechanism controls energy relaxation for electrons in Si nanocrystals embedded in a SiO$_2$ matrix, where conventional mechanisms of electron-phonon interaction are not efficient.
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Submitted 7 August, 2008;
originally announced August 2008.
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Memory effects in transport through a hopping insulator: Understanding two-dip experiments
Authors:
V. I. Kozub,
Y. M. Galperin,
V. Vinokur,
A. L. Burin
Abstract:
We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of many-electron clusters leading to formation of polarons close to the electron hopping sites. An abrupt change in the gate voltage and corresponding shift of the chemical potential change populations of the hopping sites, which then slowly relax due to rearrangements of the clusters. As a result, the…
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We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of many-electron clusters leading to formation of polarons close to the electron hopping sites. An abrupt change in the gate voltage and corresponding shift of the chemical potential change populations of the hopping sites, which then slowly relax due to rearrangements of the clusters. As a result, the density of hopping states becomes time dependent on a scale relevant to rearrangement of the structural defects leading to the excess time dependent conductivity.
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Submitted 30 July, 2008; v1 submitted 25 May, 2008;
originally announced May 2008.
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Evidence of the virtual Anderson transition in a narrow impurity band of p-GaAs/AlGaAs quantum wells: $ε_4$ conductivity and electric breakdown at low temperatures
Authors:
N. V. Agrinskaya,
V. I. Kozub,
D. V. Shamshur
Abstract:
In highly doped uncompensated p-type layers within the central part of GaAs/AlGaAs quantum wells at low temperatures we observed an activated behavior of the conductivity with low activation energies (1-3) meV which can not be ascribed to standard mechanisms. We attribute this behavior to the delocalization of hole states near the maximum of the narrow impurity band in the sense of the Anderson…
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In highly doped uncompensated p-type layers within the central part of GaAs/AlGaAs quantum wells at low temperatures we observed an activated behavior of the conductivity with low activation energies (1-3) meV which can not be ascribed to standard mechanisms. We attribute this behavior to the delocalization of hole states near the maximum of the narrow impurity band in the sense of the Anderson transition. Low temperature conduction $ε_4$ is supported by an activation of minority carriers - electrons (resulting from a weak compensation by back-ground defects) - from the Fermi level to the band of delocalized states mentioned above. The corresponding behavior can be specified as virtual Anderson transition. Low temperature transport ($<4$ K) exhibits also strong nonlinearity of a breakdown type characterized in particular by S-shaped I-V curve. The nonlinearity is observed in unexpectedly low fields ($<10$ V/cm). Such a behavior can be explained by a simple model implying an impact ionization of the localized states of the minority carriers mentioned above to the band of Anderson-delocalized states.
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Submitted 5 October, 2007;
originally announced October 2007.
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Slow relaxation of conductance of amorphous hopping insulators
Authors:
A. L. Burin,
V. I. Kozub,
Y. M. Galperin,
V. Vinokur
Abstract:
We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of structural defects leading to formation of polarons close to the electron hopping states. An abrupt change in the gate voltage and corresponding shift of the chemical potential change populations of the hopping sites, which then slowly relax due to rearrangements of structural defects. As a result, t…
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We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of structural defects leading to formation of polarons close to the electron hopping states. An abrupt change in the gate voltage and corresponding shift of the chemical potential change populations of the hopping sites, which then slowly relax due to rearrangements of structural defects. As a result, the density of hopping states becomes time dependent on a scale relevant to rearrangement of the structural defects leading to the excess time dependent conductivity.
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Submitted 10 May, 2008; v1 submitted 17 May, 2007;
originally announced May 2007.
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Point contact spectroscopy of hopping transport: effects of a magnetic field
Authors:
V. I. Kozub,
A. A. Zyuzin,
O. Entin-Wohlman,
A. Aharony,
Y. M. Galperin,
V. Vinokur
Abstract:
The conductance of a point contact between two hopping insulators is expected to be dominated by the individual localized states in its vicinity. Here we study the additional effects due to an external magnetic field. Combined with the measured conductance, the measured magnetoresistance provides detailed information on these states (e.g. their localization length, the energy difference and the…
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The conductance of a point contact between two hopping insulators is expected to be dominated by the individual localized states in its vicinity. Here we study the additional effects due to an external magnetic field. Combined with the measured conductance, the measured magnetoresistance provides detailed information on these states (e.g. their localization length, the energy difference and the hopping distance between them). We also calculate the statistics of this magnetoresistance, which can be collected by changing the gate voltage in a single device. Since the conductance is dominated by the quantum interference of particular mesoscopic structures near the point contact, it is predicted to exhibit Aharonov-Bohm oscillations, which yield information on the geometry of these structures. These oscillations also depend on local spin accumulation and correlations, which can be modified by the external field. Finally, we also estimate the mesoscopic Hall voltage due to these structures.
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Submitted 22 November, 2006;
originally announced November 2006.
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Non-Gaussian conductance noise in disordered electronic systems due to a non-linear mechanism
Authors:
V. Orlyanchik,
V. I. Kozub,
Z. Ovadyahu
Abstract:
We present results of conductance-noise experiments on disordered films of crystalline indium oxide with lateral dimensions 2microns to 1mm. The power-spectrum of the noise has the usual 1/f form, and its magnitude increases with inverse sample-volume down to sample size of 2microns, a behavior consistent with un-correlated fluctuators. A colored second spectrum is only occasionally encountered…
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We present results of conductance-noise experiments on disordered films of crystalline indium oxide with lateral dimensions 2microns to 1mm. The power-spectrum of the noise has the usual 1/f form, and its magnitude increases with inverse sample-volume down to sample size of 2microns, a behavior consistent with un-correlated fluctuators. A colored second spectrum is only occasionally encountered (in samples smaller than 40microns), and the lack of systematic dependence of non-Gaussianity on sample parameters persisted down to the smallest samples studied (2microns). Moreover, it turns out that the degree of non-Gaussianity exhibits a non-trivial dependence on the bias V used in the measurements; it initially increases with V then, when the bias is deeper into the non-linear transport regime it decreases with V. We describe a model that reproduces the main observed features and argue that such a behavior arises from a non-linear effect inherent to electronic transport in a hopping system and should be observed whether or not the system is glassy.
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Submitted 31 October, 2006;
originally announced October 2006.
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Many electron theory of 1/f-noise in hopping conductivity
Authors:
A. L. Burin,
B. I. Shklovskii,
V. I. Kozub,
Y. M. Galperin,
V. Vinokur
Abstract:
We show that $1/f$-noise in the variable range hopping regime is related to transitions of many-electrons clusters (fluctuators) between two almost degenerate states. Giant fluctuation times necessary for $1/f$-noise are provided by slow rate of simultaneous tunneling of many localized electrons and by large activation barriers for their consecutive rearrangements. The Hooge constant steeply grows…
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We show that $1/f$-noise in the variable range hopping regime is related to transitions of many-electrons clusters (fluctuators) between two almost degenerate states. Giant fluctuation times necessary for $1/f$-noise are provided by slow rate of simultaneous tunneling of many localized electrons and by large activation barriers for their consecutive rearrangements. The Hooge constant steeply grows with decreasing temperature because it is easier to find a slow fluctuator at lower temperatures. Our conclusions qualitatively agree with the low temperature observations of $1/f$-noise in p-type silicon and GaAs.
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Submitted 20 June, 2013; v1 submitted 15 December, 2005;
originally announced December 2005.
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Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si
Authors:
A. Yu. Kuntsevich,
D. A. Knyazev,
V. I. Kozub,
V. M. Pudalov,
G. Brunhaler,
G. Bauer
Abstract:
Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``metallic'' behavior. The Rxy(T) dependence was found to be non-monotonic with a maximum at temperatures Tm~0.16Tf. The Rxy(T) variations in the low-temperature domain (T<Tm) agree qualitatively with the semiclassical model…
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Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``metallic'' behavior. The Rxy(T) dependence was found to be non-monotonic with a maximum at temperatures Tm~0.16Tf. The Rxy(T) variations in the low-temperature domain (T<Tm) agree qualitatively with the semiclassical model, that takes into account a broadening of the Fermi-distribution solely. The semiclassical result considerably exceeds an interaction-induced quantum correction. In the ``high-temperature'' domain (T>Tm), the Rxy(T) dependence can be qualitatively explained in terms of either a semiclassical T-dependence of a transport time, or a thermal activation of carries from a localized band.
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Submitted 19 April, 2005;
originally announced April 2005.
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Thermoelectric effect in superconducting nanostructures
Authors:
V. L. Gurevich,
V. I. Kozub,
A. L. Shelankov
Abstract:
We study thermoelectric effects in superconducting nanobridges and demonstrate that the magnitude of these effects can be comparable or even larger than that for a macroscopic superconducting circuit. The reason is related to a possibility to have very large gradients of electron temperature within the nanobridge. The corresponding heat conductivity problems are considered. It is shown that the…
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We study thermoelectric effects in superconducting nanobridges and demonstrate that the magnitude of these effects can be comparable or even larger than that for a macroscopic superconducting circuit. The reason is related to a possibility to have very large gradients of electron temperature within the nanobridge. The corresponding heat conductivity problems are considered. It is shown that the nanoscale devices allow one to get rid of masking effects related to spurious magnetic fields.
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Submitted 19 July, 2005; v1 submitted 5 April, 2005;
originally announced April 2005.
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Orbital ac spin-Hall effect in the hopping regime
Authors:
O. Entin-Wohlman,
A. Aharony,
Y. M. Galperin,
V. I. Kozub,
V. Vinokur
Abstract:
The Rashba and Dresselhaus spin-orbit interactions are both shown to yield the low temperature spin-Hall effect for strongly localized electrons coupled to phonons. A frequency-dependent electric field ${\bf E}(ω)$ generates a spin-polarization current, normal to ${\bf E}$, due to interference of hopping paths. At zero temperature the corresponding spin-Hall conductivity is real and is proportio…
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The Rashba and Dresselhaus spin-orbit interactions are both shown to yield the low temperature spin-Hall effect for strongly localized electrons coupled to phonons. A frequency-dependent electric field ${\bf E}(ω)$ generates a spin-polarization current, normal to ${\bf E}$, due to interference of hopping paths. At zero temperature the corresponding spin-Hall conductivity is real and is proportional to $ω^{2}$. At non-zero temperatures the coupling to the phonons yields an imaginary term proportional to $ω$. The interference also yields persistent spin currents at thermal equilibrium, at ${\bf E}=0$. The contributions from the Dresselhaus and Rashba interactions to the interference oppose each other.
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Submitted 19 February, 2005;
originally announced February 2005.
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Effective description of hopping transport in granular metals
Authors:
I. S. Beloborodov,
A. V. Lopatin,
V. M. Vinokur,
V. I. Kozub
Abstract:
We develop a theory of a variable range hopping transport in granular conductors based on the sequential electron tunnelling through many grains in the presence of the strong Coulomb interaction. The processes of quantum tunnelling of real electrons are represented as trajectories (world lines) of charged classical particles in d+1 dimensions. We apply the developed technique to investigate the…
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We develop a theory of a variable range hopping transport in granular conductors based on the sequential electron tunnelling through many grains in the presence of the strong Coulomb interaction. The processes of quantum tunnelling of real electrons are represented as trajectories (world lines) of charged classical particles in d+1 dimensions. We apply the developed technique to investigate the hopping conductivity of granular systems in the regime of small tunneling conductances between the grains g << 1.
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Submitted 5 January, 2005;
originally announced January 2005.
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Current-induced magnetization changes in a spin valve due to incoherent emission of non-equilibrium magnons
Authors:
V. I. Kozub,
J. Caro
Abstract:
We describe spin transfer in a ferromagnet/normal metal/ferromagnet spin-valve point contact. Spin is transferred from the spin-polarized device current to the magnetization of the free layer by the mechanism of incoherent magnon emission by electrons. Our approach is based on the rate equation for the magnon occupation, using Fermi's golden rule for magnon emission and absorption and the non-eq…
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We describe spin transfer in a ferromagnet/normal metal/ferromagnet spin-valve point contact. Spin is transferred from the spin-polarized device current to the magnetization of the free layer by the mechanism of incoherent magnon emission by electrons. Our approach is based on the rate equation for the magnon occupation, using Fermi's golden rule for magnon emission and absorption and the non-equilibrium electron distribution for a biased spin valve. The magnon emission reduces the magnetization of the free layer. For anti-parallel alignment of the magnetizations of the layers and at a critical bias a magnon avalanche occurs, characterized by a diverging effective magnon temperature. This critical behavior can result in magnetization reversal and consequently to suppression of magnon emission. However, magnon-magnon scattering can lead to saturation of the magnon concentration at a large but finite value. The further behavior depends on the parameters of the system. In particular, gradual evolution of the magnon concentration followed by a magnetization reversal is possible. Another scenario corresponds to a step-like increase of the magnon concentration followed by a slow decrease. In the latter case a spike in the differential resistance is expected due to a contribution of electron-magnon scattering. A comparison of the obtained results to existing experimental data and theoretical approches is given.
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Submitted 14 December, 2004;
originally announced December 2004.
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1/f noise in hopping conduction: Role of multi-site aggregates
Authors:
V. I. Kozub,
Y. M. Galperin,
V. Vinokur
Abstract:
We propose a mechanism for 1/f-type noise in hopping insulators based on the multi-electron charge redistribution within the specific aggregates of the localized states located in the vicinity of the critical resistors. We predict that the noise with 1/f-type spectrum extends down to practically arbitrarily low frequencies.
We propose a mechanism for 1/f-type noise in hopping insulators based on the multi-electron charge redistribution within the specific aggregates of the localized states located in the vicinity of the critical resistors. We predict that the noise with 1/f-type spectrum extends down to practically arbitrarily low frequencies.
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Submitted 16 December, 2005; v1 submitted 1 December, 2004;
originally announced December 2004.
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Spontaneous current generation in gated nanostructures
Authors:
D. W. Horsell,
A. K. Savchenko,
Y. M. Galperin,
V. I. Kozub,
V. M. Vinokur,
D. A. Ritchie
Abstract:
We have observed an unusual dc current spontaneously generated in the conducting channel of a short-gated GaAs transistor. The magnitude and direction of this current critically depend upon the voltage applied to the gate. We propose that it is initiated by the injection of hot electrons from the gate that relax via phonon emission. The phonons then excite secondary electrons from asymmetrically…
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We have observed an unusual dc current spontaneously generated in the conducting channel of a short-gated GaAs transistor. The magnitude and direction of this current critically depend upon the voltage applied to the gate. We propose that it is initiated by the injection of hot electrons from the gate that relax via phonon emission. The phonons then excite secondary electrons from asymmetrically distributed impurities in the channel, which leads to the observed current.
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Submitted 24 November, 2004;
originally announced November 2004.
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Charge transfer between a superconductor and a hopping insulator
Authors:
V. I. Kozub,
A. A. Zyuzin,
Y. M. Galperin,
V. Vinokur
Abstract:
We develop a theory of the low-temperature charge transfer between a superconductor and a hopping insulator. We show that the charge transfer is governed by the coherent two-electron -- Cooper pair conversion process, time reversal reflection, where electrons tunnel into superconductor from the localized states in the hopping insulator located near the interface, and calculate the corresponding…
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We develop a theory of the low-temperature charge transfer between a superconductor and a hopping insulator. We show that the charge transfer is governed by the coherent two-electron -- Cooper pair conversion process, time reversal reflection, where electrons tunnel into superconductor from the localized states in the hopping insulator located near the interface, and calculate the corresponding interface resistance. This process is an analog to conventional Andreev reflection process. We show that the time reversal interface resistance is accessible experimentally, and that in mesoscopic structures it can exceed the bulk hopping resistance.
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Submitted 25 October, 2005; v1 submitted 15 November, 2004;
originally announced November 2004.
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Magnetoresistance of p-GaAs/AlGaAs structures in the vicinity of metal-insulator transition: Effect of superconducting leads
Authors:
N. V. Agrinskaya,
V. I. Kozub,
A. V. Chernyaev,
D. V. Shamshur,
A. A. Zuzin
Abstract:
Experimental and theoretical studies on transport in semiconductor samples with superconducting electrodes are reported. We focus on the samples close to metal-insulator transition. In metallic samples, a peak of negative magnetoresistance at fields lower than critical magnetic field of the leads was observed. This peak is attributed to restoration of a single-particle tunneling emerging with su…
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Experimental and theoretical studies on transport in semiconductor samples with superconducting electrodes are reported. We focus on the samples close to metal-insulator transition. In metallic samples, a peak of negative magnetoresistance at fields lower than critical magnetic field of the leads was observed. This peak is attributed to restoration of a single-particle tunneling emerging with suppression of superconductivity. The experimental results allow us to estimate tunneling transparency of the boundary between superconductor and metal. In contrast, for the insulating samples no such a peak was observed. We explain this behavior as related to properties of transport through the contact between superconductor and hopping conductor. This effect can be used to discriminate between weak localization and strong localization regimes.
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Submitted 4 November, 2004; v1 submitted 27 October, 2004;
originally announced October 2004.
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Low-frequency noise in tunneling through a single spin
Authors:
Y. M. Galperin,
V. I. Kozub,
V. M. Vinokur
Abstract:
We propose measurements of low-frequency noise in the tunneling current through a single molecule with a spin as an experimental probe for identifying a mechanism of the spin-dependent tunneling. A specific tail near the zero frequency in the noise spectrum is predicted; the amplitude and the width of being of the same order of magnitude as the recently reported peak in the noise spectrum at the…
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We propose measurements of low-frequency noise in the tunneling current through a single molecule with a spin as an experimental probe for identifying a mechanism of the spin-dependent tunneling. A specific tail near the zero frequency in the noise spectrum is predicted; the amplitude and the width of being of the same order of magnitude as the recently reported peak in the noise spectrum at the spin Larmor frequency. The ratio of the spectrum amplitudes at zero- and Larmor frequencies is shown to be a convenient tool for testing theoretical predictions.
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Submitted 16 March, 2004; v1 submitted 24 February, 2004;
originally announced February 2004.
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AC-Hopping Conductance of Self-Organized Ge/Si Quantum Dot Arrays
Authors:
Irina L. Drichko,
Andrey M. Diakonov,
Veniamin I. Kozub,
Ivan Yu. Smirnov,
Yuri M. Galperin,
Andrew I. Yakimov,
Alexander I. Nikiforov
Abstract:
Dense ($n=4 \times 10^{11}$ cm$^{-2}$) arrays of Ge quantum dots in Si host were studied using attenuation of surface acoustic waves (SAWs) propagating along the surface of a piezoelectric crystal located near the sample. The SAW magneto-attenuation coefficient, $ΔΓ=Γ(ω, H)-Γ(ω, 0)$, and change of velocity of SAW, $ΔV /V=(V(H)-V(0)) / V(0)$, were measured in the temperature interval $T$ = 1.5-4.…
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Dense ($n=4 \times 10^{11}$ cm$^{-2}$) arrays of Ge quantum dots in Si host were studied using attenuation of surface acoustic waves (SAWs) propagating along the surface of a piezoelectric crystal located near the sample. The SAW magneto-attenuation coefficient, $ΔΓ=Γ(ω, H)-Γ(ω, 0)$, and change of velocity of SAW, $ΔV /V=(V(H)-V(0)) / V(0)$, were measured in the temperature interval $T$ = 1.5-4.2 K as a function of magnetic field $H$ up to 6 T for the waves in the frequency range $f$ = 30-300 MHz. Basing on the dependences of $ΔΓ$ on $H$, $T$ and $ω$, as well as on its sign, we believe that the AC conduction mechanism is a combination of diffusion at the mobility edge with hopping between localized states at the Fermi level. The measured magnetic field dependence of the SAW attenuation is discussed basing on existing theoretical concepts.
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Submitted 12 November, 2003;
originally announced November 2003.
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Josephson transport through a Hubbard impurity center
Authors:
V. I. Kozub,
A. V. Lopatin,
V. M. Vinokur
Abstract:
We investigate the Josephson transport through a thin semiconductor barrier containing impurity centers with the on-site Hubbard interaction $u$ of an arbitrary sign and strength. We find that in the case of the repulsive interaction the Josephson current changes sign with the temperature increase if the energy of the impurity level $ε$ (measured from the Fermi energy of superconductors) falls i…
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We investigate the Josephson transport through a thin semiconductor barrier containing impurity centers with the on-site Hubbard interaction $u$ of an arbitrary sign and strength. We find that in the case of the repulsive interaction the Josephson current changes sign with the temperature increase if the energy of the impurity level $ε$ (measured from the Fermi energy of superconductors) falls in the interval $(-u,0)$. We predict strong temporal fluctuations of the current if only a few centers present within the junction. In the case of the attractive impurity potential ($u<0$) and at low temperatures, the model is reduced to the effective two level Hamiltonian allowing thus a simple description of the nonstationary Josephson effect in terms of pair tunneling processes.
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Submitted 20 December, 2002;
originally announced December 2002.
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Is weak temperature dependence of electron dephasing possible?
Authors:
V. V. Afonin,
J. Bergli,
Y. M. Galperin,
V. L. Gurevich,
V. I. Kozub
Abstract:
The first-principle theory of electron dephasing by disorder-induced two state fluctuators is developed. There exist two mechanisms of dephasing. First, dephasing occurs due to direct transitions between the defect levels caused by inelastic electron-defect scattering. The second mechanism is due to violation of the time reversal symmetry caused by time-dependent fluctuations of the scattering p…
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The first-principle theory of electron dephasing by disorder-induced two state fluctuators is developed. There exist two mechanisms of dephasing. First, dephasing occurs due to direct transitions between the defect levels caused by inelastic electron-defect scattering. The second mechanism is due to violation of the time reversal symmetry caused by time-dependent fluctuations of the scattering potential. These fluctuations originate from an interaction between the dynamic defects and conduction electrons forming a thermal bath. The first contribution to the dephasing rate saturates as temperature decreases. The second contribution does not saturate, although its temperature dependence is rather weak, $\propto T^{1/3}$. The quantitative estimates based on the experimental data show that these mechanisms considered can explain the weak temperature dependence of the dephasing rate in some temperature interval. However, below some temperature dependent on the model of dynamic defects the dephasing rate tends rapidly to zero. The relation to earlier studies of the dephasing caused by the dynamical defects is discussed.
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Submitted 21 May, 2002;
originally announced May 2002.
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Metal-insulator transition in 2D: a role of the upper Habbard band
Authors:
V. I. Kozub,
and N. V. Agrinskaya
Abstract:
To explain the main features of the metal-insulator transition (MIT) in 2D we suggest a simple model taking into account strongly localized states in the band tail of 2D conductivity band with a specific emphasize of a role of doubly-occupied states (upper Hubbard band). The metallic behavior of resistance is explained as result of activation of localized electrons to conductance band leading to…
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To explain the main features of the metal-insulator transition (MIT) in 2D we suggest a simple model taking into account strongly localized states in the band tail of 2D conductivity band with a specific emphasize of a role of doubly-occupied states (upper Hubbard band). The metallic behavior of resistance is explained as result of activation of localized electrons to conductance band leading to a suppression of non-linear screening of the disorder potential. The magnetoresistance (MR) in the critical region is related to depopulation of double occupied localized states also leading to partial suppression of the nonlinear screening. The most informative data are related to nearly activated temperature dependence of MR in strongly insulating limit (which can be in particular reached from the metallic state in high enough fields). According to our model this behavior originates due to a lowering of a position of chemical potential in the upper Hubbard band due to Zeeman splitting. We compare the theoretical predictions to the existing experimental data and demonstrate that the model explains such features of the 2D MIT as scaling behavior in the critical region, saturation of MR and H/T scaling of MR in the insulating limit. The quantitative analysis of MR in strongly insulating limit based on the model suggested leads to the values of g-factors being in good agreement with known values for localized states in corresponding materials.
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Submitted 13 April, 2001;
originally announced April 2001.
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On the theory of thermoelectric phenomena in superconductors
Authors:
Y. M. Galperin,
V. L. Gurevich,
V. I. Kozub,
A. L. Shelankov
Abstract:
The theory of thermoelectric effects in superconductors is discussed in connection to the recent publication by Marinescu and Overhauser, Phys. Rev. B 55, 11637 (1997). We argue that the charge on-conservation arguments by Marinescu and Overhauser do not require any revision of the Boltzmann transport equation in superconductors, and show that their ``electron-conserving transport theory'' contr…
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The theory of thermoelectric effects in superconductors is discussed in connection to the recent publication by Marinescu and Overhauser, Phys. Rev. B 55, 11637 (1997). We argue that the charge on-conservation arguments by Marinescu and Overhauser do not require any revision of the Boltzmann transport equation in superconductors, and show that their ``electron-conserving transport theory'' contradicts thermodynamics. Possible mechanisms responsible for the discrepancy between some experimental data and the theory by Galperin, Gurevich, and Kozub, JETP Lett. 17, 476 (1973) are discussed.
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Submitted 20 December, 2001; v1 submitted 19 December, 2000;
originally announced December 2000.
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A possible role of D^- band in hopping conductivity and metal-insulator transition in 2D structures
Authors:
V. I. Kozub,
N. V. Agrinskaya,
S. I. Khondaker,
I. Shlimak
Abstract:
A simple two-band model is suggested explaining recently reported unusual features for hopping magnetoresistance and the metal-insulator transition in 2D structures. The model implies that the conductivity is dominated by the upper Hubbard band (D^- band). Experimental studies of hopping magnetoresistance for Si delta doped GaAs/AlGaAs heterostructure give additional evidences for the model.
A simple two-band model is suggested explaining recently reported unusual features for hopping magnetoresistance and the metal-insulator transition in 2D structures. The model implies that the conductivity is dominated by the upper Hubbard band (D^- band). Experimental studies of hopping magnetoresistance for Si delta doped GaAs/AlGaAs heterostructure give additional evidences for the model.
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Submitted 27 November, 1999;
originally announced November 1999.
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Fluctuation-Stimulated Variable-Range Hopping
Authors:
V. I. Kozub,
S. D. Baranovskii,
I. Shlimak
Abstract:
Qualitatively new transport mechanism is suggested for hopping of carriers according to which the variable-range hopping (VRH) arises from the resonant tunneling between transport states brought into resonance by Coulomb potentials produced by surrounding sites with fluctuating occupations. A semiquantitative description of the hopping transport is given based on the assumption that fluctuations…
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Qualitatively new transport mechanism is suggested for hopping of carriers according to which the variable-range hopping (VRH) arises from the resonant tunneling between transport states brought into resonance by Coulomb potentials produced by surrounding sites with fluctuating occupations. A semiquantitative description of the hopping transport is given based on the assumption that fluctuations of energies of hopping sites have spectral density 1/f.
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Submitted 23 November, 1999;
originally announced November 1999.
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Nanoconstriction Microscopy of the Giant Magnetoresistance in Cobalt/Copper Spin Valves
Authors:
S. J. C. H. Theeuwen,
J. Caro,
K. P. Wellock,
S. Radelaar,
C. H. Marrows,
B. J. Hickey,
V. I. Kozub
Abstract:
We use nanometer-sized point contacts to a Co/Cu spin valve to study the giant magnetoresistance (GMR) of only a few Co domains. The measured data show strong device-to-device differences of the GMR curve, which we attribute to the absence of averaging over many domains. The GMR ratio decreases with increasing bias current. For one particular device, this is accompanied by the development of two…
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We use nanometer-sized point contacts to a Co/Cu spin valve to study the giant magnetoresistance (GMR) of only a few Co domains. The measured data show strong device-to-device differences of the GMR curve, which we attribute to the absence of averaging over many domains. The GMR ratio decreases with increasing bias current. For one particular device, this is accompanied by the development of two distinct GMR plateaus, the plateau level depending on bias polarity and sweep direction of the magnetic field. We attribute the observed behavior to current-induced changes of the magnetization, involving spin transfer due to incoherent emission of magnons and self-field effects.
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Submitted 9 November, 1999;
originally announced November 1999.
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Fluctuator in disordered metallic point contacts: a simulation approach
Authors:
V. I. Kozub,
C. Oligschleger
Abstract:
Electron transport through amorphous monatomic metallic structures generated earlier by molecular dynamics simulations is studied numerically. The interference of electronic trajectories backscattered by the structural disorder probes the multistable structural relaxations responsible for low-frequency noise in real metallic contacts. The structure of these modes is visualized; the dependence of…
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Electron transport through amorphous monatomic metallic structures generated earlier by molecular dynamics simulations is studied numerically. The interference of electronic trajectories backscattered by the structural disorder probes the multistable structural relaxations responsible for low-frequency noise in real metallic contacts. The structure of these modes is visualized; the dependence of noise magnitude on size and structure of the modes is studied. The transition from multistable behaviour to a more complex one is observed for temperatures far below the melting temperature. The current fluctuations observed numerically resemble the complex behaviour reported earlier for current noise in small metallic structures at moderate temperatures.
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Submitted 7 July, 1998;
originally announced July 1998.
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Zero-bias anomalies of point contact resistance due to adiabatic electron renormalization of dynamical defects
Authors:
V. I. Kozub,
A. M. Rudin
Abstract:
We study effect of the adiabatic electron renormalization on the parameters of the dynamical defects in the ballistic metallic point contact. The upper energy states of the ``dressed'' defect are shown to give a smaller contribution to a resistance of the contact than the lower energy ones. This holds both for the "classical" renormalization related to defect coupling with average local electron…
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We study effect of the adiabatic electron renormalization on the parameters of the dynamical defects in the ballistic metallic point contact. The upper energy states of the ``dressed'' defect are shown to give a smaller contribution to a resistance of the contact than the lower energy ones. This holds both for the "classical" renormalization related to defect coupling with average local electron density and for the "mesoscopic" renormalization caused by the mesoscopic fluctuations of electronic density the dynamical defects are coupled with. In the case of mesoscopic renormalization one may treat the dynamical defect as coupled with Friedel oscillations originated by the other defects, both static and mobile. Such coupling lifts the energy degeneracy of the states of the dynamical defects giving different mesoscopic contribution to resistance, and provides a new model for the fluctuator as for the object originated by the electronic mesoscopic disorder rather than by the structural one. The correlation between the defect energy and the defect contribution to the resistance leads to zero-temperature and zero-bias anomalies of the point contact resistance.
A comparison of these anomalies with those predicted by the Two Channel Kondo Model (TCKM) is made. It is shown, that although the proposed model is based on a completely different from TCKM physical background, it leads to a zero-bias anomalies of the point contact resistance, which are qualitatively similar to TCKM predictions.
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Submitted 3 October, 1996;
originally announced October 1996.
