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Condensed Matter > Materials Science

arXiv:1212.4272 (cond-mat)
[Submitted on 18 Dec 2012]

Title:Low temperature transport properties of multigraphene structures on 6H-SiC obtained by thermal graphitization: evidences of a presence of nearly perfect graphene layer

Authors:A.A.Lebedev, N.V.Agrinskaya, V.A.Beresovets, V.I.Kozub, S.P.Lebedev, A.A.Sitnikova
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Abstract:Transport properties of multigraphene layers on 6H-SiC substrates fabricated by thermal graphitization of SiC were studied. The principal result is that these structures were shown to contain a nearly perfect graphene layer situated between the SiC substrate and multgraphene layer. It was found that the curves of magnetoresistance and Shubnikov- de Haas oscillations shown the features, typical for single-layered graphene. The low temperature resistance demonstrated an increase with temperature increase, which also corresponds to a behavior typical for single-layered graphene (antilocalization). However at higher temperatures the resistance decreased with an increase of temperature, which corresponds to a weak localization. We believe that the observed behavior can be explained by a parallel combination of contributions to the conductivity of single-layered graphene and of multigraphene, the latter allowing to escape damages of the graphene by atmosphere effect.
Comments: 8 pages, 4 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1212.4272 [cond-mat.mtrl-sci]
  (or arXiv:1212.4272v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1212.4272

Submission history

From: Nina Agrinskaya [view email]
[v1] Tue, 18 Dec 2012 08:49:43 UTC (156 KB)
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