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Spatiotemporal characterization of emergent behavior of self-propelled oil droplet
Authors:
Riku Adachi,
Hiroki Kojima,
Takashi Ikegami
Abstract:
To further understand the complex behavior of swimming microorganisms, the spontaneous motion of nonliving matter provides essential insights. While substantial research has focused on quantitatively analyzing complex behavioral patterns, characterizing these dynamics aiming for inclusive comparison to the behavior of living systems remains challenging. In this study, we experimentally and numeric…
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To further understand the complex behavior of swimming microorganisms, the spontaneous motion of nonliving matter provides essential insights. While substantial research has focused on quantitatively analyzing complex behavioral patterns, characterizing these dynamics aiming for inclusive comparison to the behavior of living systems remains challenging. In this study, we experimentally and numerically investigated the 'life-like' behavior of an oil droplet in an aqueous surfactant solution by identifying behavioral modes of spontaneous motion patterns in response to varying physical parameters, such as volume and oil concentration. Leveraging data-driven nonparametric dynamical systems analysis, we discovered the low dimensionality and nonlinearity of the underlying dynamical system governing oil droplet motion. Notably, our simulations demonstrate that the two-dimensional Langevin equations effectively reproduce the overall behavior experimentally observed while retaining the rational correspondence with physical parameter interpretations. These findings not only elucidate the fundamental dynamics governing the spontaneous motion of oil droplet systems but also suggest potential pathways for developing more descriptive models that bridge the gap between nonliving and living behaviors.
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Submitted 23 December, 2024;
originally announced December 2024.
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Nonlinear and Hysteretic Ultrasound Propagation in Solid $^4$He: Dynamics of Dislocation Lines and Pinning Impurities
Authors:
Izumi Iwasa,
Harry Kojima
Abstract:
We report on the measurements of 9.6 MHz ultrasound propagation down to 15 mK in polycrystalline quantum solid $^4$He containing 0.3 and 20 ppm $^3$He impurities. The attenuation and speed of ultrasound are strongly affected by the dislocation vibration. The observed increase in attenuation from 1.2 K to a peak near 0.3 K is independent of drive amplitude and reflects crossover from overdamped to…
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We report on the measurements of 9.6 MHz ultrasound propagation down to 15 mK in polycrystalline quantum solid $^4$He containing 0.3 and 20 ppm $^3$He impurities. The attenuation and speed of ultrasound are strongly affected by the dislocation vibration. The observed increase in attenuation from 1.2 K to a peak near 0.3 K is independent of drive amplitude and reflects crossover from overdamped to underdamped oscillation of dislocations pinned at network nodes. Below 0.3 K, amplitude-dependent and hysteretic variations are observed in both attenuation and speed. The attenuation decreases from the peak at 0.3 K to a very small constant value below 70 mK at sufficiently low drive amplitudes of ultrasound, while it remains a high value down to 15mK at the highest drive amplitude. The behaviors at low drive amplitudes can be well described by the effects of the thermal pinning and unpinning of dislocations by the impurities. The binding energy between a dislocation line and a $^3$He atom is estimated to be 0.35 K. The nonlinear and hysteretic behaviors at intermediate drive amplitudes are analyzed in terms of stress-induced unpinning which may occur catastrophically within a network dislocation segment. The relaxation time for pinning at 15 mK is very short ($< 4$ s), while more than 1,000 s is required for unpinning.
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Submitted 18 November, 2020;
originally announced November 2020.
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Evaluating Computational Shortcuts in Supercell-Based Phonon Calculations of Molecular Crystals: The Instructive Case of Naphthalene
Authors:
Tomas Kamencek,
Sandro Wieser,
Hirotaka Kojima,
Natalia Bedoya-Martínez,
Johannes P. Dürholt,
Rochus Schmid,
Egbert Zojer
Abstract:
Phonons crucially impact a variety of properties of organic semiconductor materials. For instance, charge- and heat transport depend on low-frequency phonons, while for other properties, such as the free energy, especially high-frequency phonons count. For all these quantities one needs to know the entire phonon band structure, whose simulation becomes exceedingly expensive for more complex system…
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Phonons crucially impact a variety of properties of organic semiconductor materials. For instance, charge- and heat transport depend on low-frequency phonons, while for other properties, such as the free energy, especially high-frequency phonons count. For all these quantities one needs to know the entire phonon band structure, whose simulation becomes exceedingly expensive for more complex systems when using methods like dispersion-corrected density functional theory (DFT). Therefore, in the present contribution we evaluate the performance of more approximate methodologies, including density functional tight binding (DFTB) and a pool of force fields (FF) of varying complexity and sophistication. Beyond merely comparing phonon band structures, we also critically evaluate to what extent derived quantities, like temperature-dependent heat capacities, mean squared thermal displacements and temperature-dependent free energies are impacted by shortcomings in the description of the phonon bands. As a benchmark system, we choose (deuterated) naphthalene, as the only organic semiconductor material for which to date experimental phonon band structures are available in the literature. Overall, the best performance amongst the approximate methodologies is observed for a system-specifically parametrized second-generation force field. Interestingly, in the low-frequency regime also force fields with a rather simplistic model for the bonding interactions (like the General Amber Force Field) perform rather well. As far as the tested DFTB parametrization is concerned, we obtain a significant underestimation of the unit cell volume resulting in a pronounced overestimation of the phonon energies in the low frequency region. This cannot be mended by relying on the DFT-calculated unit cell, since with this unit cell the DFTB phonon frequencies significantly underestimate the experiments.
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Submitted 6 April, 2020; v1 submitted 7 February, 2020;
originally announced February 2020.
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Gliding filament system giving both orientational order and clusters in collective motion
Authors:
Sakurako Tanida,
Ken'ya Furuta,
Kaori Nishikawa,
Tetsuya Hiraiwa,
Hiroaki Kojima,
Kazuhiro Oiwa,
Masaki Sano
Abstract:
Active matter consists of self-propelled elements exhibits fascinating collective motions ranging from biological to artificial systems. Among wide varieties of active matter systems, reconstituted bio-filaments moving on molecular motor turf interacting purely by physical interactions provides the fundamental test ground for understanding biological motility. However, until now, multi-filament co…
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Active matter consists of self-propelled elements exhibits fascinating collective motions ranging from biological to artificial systems. Among wide varieties of active matter systems, reconstituted bio-filaments moving on molecular motor turf interacting purely by physical interactions provides the fundamental test ground for understanding biological motility. However, until now, multi-filament collisions,depletion agents or binding molecules has been required for the emergence of ordered patterns in motility assay. Thus, whether simple physical interactions during collisions such as steric effect without depletion nor binding agents are sufficient or not for producing ordered patterns in motility assays remains still elusive. In this article, we constructed a motility assay purely consists of kinesin motor and microtubule in which the frequency of binary collision can be controlled without using depletion nor binding agents. By controlling strength of steric interaction and density of microtubules, we found different states; disordered state, long-range orientationally ordered state, liquid-gas-like phase separated state, and transitions between them. We found that a balance between cross over and aligning events in collisions controls transition from disorder to global ordered state, while excessively strong steric effect leads to the phase separated clusters. Furthermore, macroscopic chiral symmetry breaking observed as a global rotation of nematic order observed in this experiment could be attributed to the chirality at molecular level. Numerical simulations in which we change strength of volume exclusion reproduce these experimental results. Moreover, it reveals the transition from long-range alignment to nematic bands then to aggregations. This study may provide new insights into dynamic ordering by self-propelled elements through a purely physical interaction.
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Submitted 4 June, 2018;
originally announced June 2018.
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Appearance of a Domain Structure and its Electronic states in Iron Doped 1$T$-TaS$_2$ Observed using Scanning Tunneling Microscopy and Spectroscopy
Authors:
Yuita Fujisawa,
Tatsunari Shimabukuro,
Hiroyuki Kojima,
Kai Kobayashi,
Shun Ohta,
Tadashi Machida,
Satoshi Demura,
Hideaki Sakata
Abstract:
In this paper, we report on scanning tunneling microscopy and spectroscopy (STM/STS) measurements on iron doped 1$T$-Ta$_{1-x}$Fe$_x$S$_2$. A novel domain structure composed of the domains with localized nature divided by the walls is observed in Ta$_{0.99}$Fe$_{0.01}$S$_2$, where the Mott transition is completely suppressed. This indicates that the melting of the Mott state accompanies the appear…
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In this paper, we report on scanning tunneling microscopy and spectroscopy (STM/STS) measurements on iron doped 1$T$-Ta$_{1-x}$Fe$_x$S$_2$. A novel domain structure composed of the domains with localized nature divided by the walls is observed in Ta$_{0.99}$Fe$_{0.01}$S$_2$, where the Mott transition is completely suppressed. This indicates that the melting of the Mott state accompanies the appearance of the domain structure. Since the number of walls increase in superconducting Ta$_{0.98}$Fe$_{0.02}$S$_2$, the domain walls seem to be responsible for superconductivity in iron doped 1$T$-TaS$_2$.
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Submitted 9 October, 2017;
originally announced October 2017.
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Probing Electron Interactions in a Two-Dimensional System by Quantum Magneto-Oscillations
Authors:
V. M. Pudalov,
M. E. Gershenson,
H. Kojima
Abstract:
We have experimentally studied the renormalized effective mass m* and Dingle temperature T_D in two spin subbands with essentially different electron populations. Firstly, we found that the product (m*T_D) that determines damping of quantum oscillations, to the first approximation, is the same in the majority and minority subbands even at the spin polarization degree as high as 66\%. This result c…
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We have experimentally studied the renormalized effective mass m* and Dingle temperature T_D in two spin subbands with essentially different electron populations. Firstly, we found that the product (m*T_D) that determines damping of quantum oscillations, to the first approximation, is the same in the majority and minority subbands even at the spin polarization degree as high as 66\%. This result confirms the theoretical predictions that the interaction takes place at high energies ~ E_F rather than within a narrow strip of energies E_F\pm k_BT. Secondly, to the next approximation, we revealed a difference in the damping factor of the two spin subbands, which causes skewness of the oscillation lineshape. In the absence of the in-plane magnetic field, the damping factor (m*T_D) is systematically smaller in the spin-majority subband. The difference, quantified with the skew factor γ= (T_{D\downarrow}-T_{D\uparrow})/2T_{D0} can be as large as 20%. The skew factor tends to decrease as B_\parallel or temperature grow, or perpendicular field decreases; for low electron densities and high in-plane fields the skew factor even changes sign. Finally, we compared the temperature and magnetic field dependencies of the magneto-oscillations amplitude with predictions of the interaction correction theory, and found, besides some qualitative similarities, several quantitative and qualitative differences. To explain qualitatively our results, we suggested an empirical model that assumes the existence of easily magnetized triplet scatterers on the Si/SiO_2 interface.
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Submitted 19 August, 2014;
originally announced August 2014.
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Effects of $^3$He Impurity on Solid $^4$He Studied by Compound Torsional Oscillator
Authors:
P. Gumann,
M. C. Keiderling,
D. Ruffner,
H. Kojima
Abstract:
Frequency shifts and dissipations of a compound torsional oscillator induced by solid $^4$He samples containing $^3$He impurity concentrations ($x_3$ = 0.3, 3, 6, 12 and 25 in units of 10$^{-6}$) have been measured at two resonant mode frequencies ($f_1$ = 493 and $f_2$ = 1164 Hz) at temperatures ($T$) between 0.02 and 1.1 K. The fractional frequency shifts of the $f_1$ mode were much smaller than…
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Frequency shifts and dissipations of a compound torsional oscillator induced by solid $^4$He samples containing $^3$He impurity concentrations ($x_3$ = 0.3, 3, 6, 12 and 25 in units of 10$^{-6}$) have been measured at two resonant mode frequencies ($f_1$ = 493 and $f_2$ = 1164 Hz) at temperatures ($T$) between 0.02 and 1.1 K. The fractional frequency shifts of the $f_1$ mode were much smaller than those of the $f_2$ mode. The observed frequency shifts continued to decrease as $T$ was increased above 0.3 K, and the conventional non-classical rotation inertia fraction was not well defined in all samples with $x_3 \geq$ 3 ppm. Temperatures where peaks in dissipation of the $f_2$ mode occurred were higher than those of the $f_1$ mode in all samples. The peak dissipation magnitudes of the $f_1$ mode was greater than those of the $f_2$ mode in all samples. The activation energy and the characteristic time ($τ_0$) were extracted for each sample from an Arrhenius plot between mode frequencies and inverse peak temperatures. The average activation energy among all samples was 430 mK, and $τ_0$ ranged from 2$\times 10^{-7}$ s to 5$\times 10^{-5}$ s in samples with $x_3$ = 0.3 to 25 ppm. The characteristic time increased in proportion to $x_3^{2/3}$. Observed temperature dependence of dissipation were consistent with those expected from a simple Debye relaxation model \emph{if} the dissipation peak magnitude was separately adjusted for each mode. Observed frequency shifts were greater than those expected from the model. The discrepancies between the observed and the model frequency shifts increased at the higher frequency mode.
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Submitted 11 February, 2011;
originally announced February 2011.
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Spin Fluid Dynamics Observed by Magnetic Fountain Effect and Mechano-Spin Effect in the Ferromagnetic Superfluid $^3$He A$_1$ Phase
Authors:
Y. Aoki,
A. Yamaguchi,
K. Suzuki,
H. Ishimoto,
H. Kojima
Abstract:
Systematic observations of the magnetically generated fountain pressure in the superfluid $^3$He A$_1$ have been carried out in a newly built apparatus designed to reduce the effect of thermal gradients. In the same apparatus, mechanical pumping and filtering of polarized nuclear spins were realized by the pneumatic pumping action of an electrostatically actuated membrane. In both experiments, the…
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Systematic observations of the magnetically generated fountain pressure in the superfluid $^3$He A$_1$ have been carried out in a newly built apparatus designed to reduce the effect of thermal gradients. In the same apparatus, mechanical pumping and filtering of polarized nuclear spins were realized by the pneumatic pumping action of an electrostatically actuated membrane. In both experiments, the measured induced pressure was observed to decay at all temperatures where the A$_1$ phase appeared in magnetic fields up to 13 T and liquid pressures between 1 and 29 bar. The inferred spin relaxation rate tended to increase as the low temperature phase boundary with the A$_2$ phase (T$_{C2}$) was approached. The increase in spin relaxation rate near T$_{C2}$ can be explained by the presence of a minority spin condensate in the A$_1$ phase as predicted by Monien and Tewordt and by the application of the Leggett-Takagi theory of spin relaxation in superfluid $^3$He.
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Submitted 10 August, 2010;
originally announced August 2010.
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Interaction Effects in Conductivity of a Two-Valley Electron System in High-Mobility Si Inversion Layers
Authors:
N. N. Klimov,
D. A. Knyazev,
O. E. Omel'yanovskii,
V. M. Pudalov,
H. Kojima,
M. E. Gershenson
Abstract:
We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields B=0-5T. The experimental data have been analyzed using the theory of interaction effects in the conductivity of disordered 2D systems. The parameters essential f…
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We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields B=0-5T. The experimental data have been analyzed using the theory of interaction effects in the conductivity of disordered 2D systems. The parameters essential for comparison with the theory, such as the intervalley scattering time and valley splitting, have been measured or evaluated in independent experiments. The observed behavior of the conductivity, including its quasi-linear increase with decreasing T down to ~0.4K and its downturn at lower temperatures, is in agreement with the theory. The values of the Fermi- liquid parameter obtained from the comparison agree with the corresponding values extracted from the analysis of Shubnikov-de Haas oscillations based on the theory of magnetooscillations in interacting 2D systems.
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Submitted 16 September, 2008;
originally announced September 2008.
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New Dissipation Relaxation Phenomenon in Oscillating Solid He-4
Authors:
Y. Aoki,
M. C. Keiderling,
H. Kojima
Abstract:
We describe the first observations on the time-dependent dissipation when the drive level of a torsional oscillator containing solid He-4 is abruptly changed. The relaxation of dissipation in solid He-4 shows rich dynamical behavior including exponential and logarithmic time-dependent decays, hysteresis, and memory effects.
We describe the first observations on the time-dependent dissipation when the drive level of a torsional oscillator containing solid He-4 is abruptly changed. The relaxation of dissipation in solid He-4 shows rich dynamical behavior including exponential and logarithmic time-dependent decays, hysteresis, and memory effects.
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Submitted 19 March, 2008;
originally announced March 2008.
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Oscillation Frequency Dependence of Non-Classical Rotation Inertia of Solid $^4$He
Authors:
Y. Aoki,
J. C. Graves,
H. Kojima
Abstract:
The non-classical rotational inertia fraction of the identical cylindrical solid $^4$He below 300 mK is studied at 496 and 1173 Hz by a double resonance torsional oscillator. Below 35 mK, the fraction is the same at sufficiently low rim velocities. Above 35 mK, the fraction is greater for the higher than the lower mode. The dissipation peak of the lower mode occurs at a temperature $\sim$ 4 mK l…
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The non-classical rotational inertia fraction of the identical cylindrical solid $^4$He below 300 mK is studied at 496 and 1173 Hz by a double resonance torsional oscillator. Below 35 mK, the fraction is the same at sufficiently low rim velocities. Above 35 mK, the fraction is greater for the higher than the lower mode. The dissipation peak of the lower mode occurs at a temperature $\sim$ 4 mK lower than that of the higher mode. The drive dependence of the two modes shows that the reduction of the fraction is characterized by critical velocity, \textit{not} amplitude nor acceleration.
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Submitted 7 May, 2007; v1 submitted 4 May, 2007;
originally announced May 2007.
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Intervalley scattering and weak localization in Si-based two-dimensional structures
Authors:
A. Yu. Kuntsevich,
N. N. Klimov,
S. A. Tarasenko,
N. S. Averkiev,
V. M. Pudalov,
H. Kojima,
M. E. Gershenson
Abstract:
We have measured the weak localization magnetoresistance in (001)-oriented Si MOS structures with a wide range of mobilities. For the quantitative analysis of the data, we have extended the theory of weak-localization corrections in the ballistic regime to the system with two equivalent valleys in electron spectrum. This theory describes the observed magnetoresistance and allows the extraction o…
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We have measured the weak localization magnetoresistance in (001)-oriented Si MOS structures with a wide range of mobilities. For the quantitative analysis of the data, we have extended the theory of weak-localization corrections in the ballistic regime to the system with two equivalent valleys in electron spectrum. This theory describes the observed magnetoresistance and allows the extraction of the phase breaking time tau_phi and the intervalley scattering time tau_v. The temperature dependences tau_phi(T) for all studied structures are in good agreement with the theory of electron-electron interaction effects in two-dimensional systems. The intervalley scattering is elastic and rather strong: tau_v is typically only an order of magnitude greater than the transport time, tau. It is found that the intervalley scattering rate is temperature-independent and the ratio tau_v/tau decreases with increasing the electron density. These observations suggest that the roughness of the Si-SiO2 interface plays the major role in intervalley scattering.
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Submitted 25 January, 2007;
originally announced January 2007.
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Minority Spin Condensate in Spin-Polarized Superfluid $^3$He-A$_1$ Phase
Authors:
A. Yamaguchi,
S. Kobayashi,
H. Ishimoto,
H. Kojima
Abstract:
The spin-polarized superfluid $^3$He A$_1$ phase, which forms below 3 mK in external magnetic field, serves as a material in which theoretical notions of fundamental magnetic processes and macroscopic quantum spin phenomena may be tested. Conventionally, the superfluid component of the A$_1$ phase is understood to contain only the majority spin condensate having energetically-favoured paired spi…
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The spin-polarized superfluid $^3$He A$_1$ phase, which forms below 3 mK in external magnetic field, serves as a material in which theoretical notions of fundamental magnetic processes and macroscopic quantum spin phenomena may be tested. Conventionally, the superfluid component of the A$_1$ phase is understood to contain only the majority spin condensate having energetically-favoured paired spins directed along the external field and no minority spin condensate having paired spins in the opposite direction. We have developed a novel mechanical spin density detector to measure the spin relaxation in the A$_1$ phase as functions of temperature, pressure and magnetic field. The mechanical spin detector is based in principle on the unique magnetic fountain effect occurring only in the A$_1$ phase (occurring between two transition temperatures, T$_{c1}$ and T$_{c2}$). Unexpectedly, the spin relaxation rate increases rapidly as the temperature is decreased towards T$_{c2}$. Our measurements, together with Leggett-Takagi and Monien-Tewordt theories, demonstrate that a minute presence of minority spin pairs is responsible for the unexpected spin relaxation phenomena in A$_1$ phase.
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Submitted 16 November, 2006;
originally announced November 2006.
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On the Electron-Electron Interactions in Two Dimensions
Authors:
V. M. Pudalov,
M. E. Gershenson,
H. Kojima
Abstract:
In this paper, we analyze several experiments that address the effects of electron-electron interactions in 2D electron (hole) systems in the regime of low carrier density. The interaction effects result in renormalization of the effective spin susceptibility, effective mass, and g*-factor. We found a good agreement among the data obtained for different 2D electron systems by several experimenta…
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In this paper, we analyze several experiments that address the effects of electron-electron interactions in 2D electron (hole) systems in the regime of low carrier density. The interaction effects result in renormalization of the effective spin susceptibility, effective mass, and g*-factor. We found a good agreement among the data obtained for different 2D electron systems by several experimental teams using different measuring techniques. We conclude that the renormalization is not strongly affected by the material or sample-dependent parameters such as the potential well width, disorder (the carrier mobility), and the bare (band) mass. We demonstrate that the apparent disagreement between the reported results on various 2D electron systems originates mainly from different interpretations of similar "raw" data. Several important issues should be taken into account in the data processing, among them the dependences of the effective mass and spin susceptibility on the in-plane field, and the temperature dependence of the Dingle temperature. The remaining disagreement between the data for various 2D electron systems, on one hand, and the 2D hole system in GaAs, on the other hand, may indicate more complex character of electron-electron interactions in the latter system.
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Submitted 19 March, 2004; v1 submitted 21 January, 2004;
originally announced January 2004.
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Reply to Comment (cond-mat/0311174)
Authors:
V. M. Pudalov,
M. E. Gershenson,
H. Kojima,
G. Brunthaler,
G. Bauer
Abstract:
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, Tτ>1. Our comparison does not involve any fitting parameters.
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, Tτ>1. Our comparison does not involve any fitting parameters.
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Submitted 16 April, 2004; v1 submitted 5 January, 2004;
originally announced January 2004.
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Reply to Comment on "Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers"
Authors:
V. M. Pudalov,
M. Gershenson,
H. Kojima,
N. Busch,
E. M. Dizhur,
G. Brunthaler,
A. Prinz,
G. Bauer
Abstract:
Reply to the Comment by S.V. Kravchenko, A.A. Shashkin, and V.T. Dolgopolov [cond-mat/0106056]
Reply to the Comment by S.V. Kravchenko, A.A. Shashkin, and V.T. Dolgopolov [cond-mat/0106056]
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Submitted 14 June, 2002;
originally announced June 2002.
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Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures
Authors:
V. M. Pudalov,
M. E. Gershenson,
H. Kojima,
G. Brunthaler,
A. Prinz,
G. Bauer
Abstract:
We compare the temperature dependence of resistivity ρ(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been found independently. An anomalous increase of ρwith temperature, which has been considered a signature of the "metallic" state, can be described quantitatively by t…
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We compare the temperature dependence of resistivity ρ(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been found independently. An anomalous increase of ρwith temperature, which has been considered a signature of the "metallic" state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance ρ(B) is qualitatively consistent with the theory; however, the lack of quantitative agreement indicates that the magnetoresistance is more susceptible to the sample-specific effects than ρ(T).
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Submitted 30 May, 2002; v1 submitted 21 May, 2002;
originally announced May 2002.
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Memory Effects in Electron Transport in Si Inversion Layers in the Dilute Regime: Individuality versus Universality
Authors:
V. M. Pudalov,
M. E. Gershenson,
H. Kojima
Abstract:
In order to separate the universal and sample-specific effects in the conductivity of high-mobility Si inversion layers, we studied the electron transport in the same device after cooling it down to 4K at different fixed values of the gate voltage V^{cool}. Different V^{cool} did not modify significantly either the momentum relaxation rate or the strength of electron-electron interactions. Howev…
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In order to separate the universal and sample-specific effects in the conductivity of high-mobility Si inversion layers, we studied the electron transport in the same device after cooling it down to 4K at different fixed values of the gate voltage V^{cool}. Different V^{cool} did not modify significantly either the momentum relaxation rate or the strength of electron-electron interactions. However, the temperature dependences of the resistance and the magnetoresistance in parallel magnetic fields, measured in the vicinity of the metal-insulator transition in 2D, carry a strong imprint of individuality of the quenched disorder determined by V^{cool}. This demonstrates that the observed transition between ``metallic'' and insulating regimes involves both, universal effects of electron-electron interaction and sample-specific effects. Far away from the transition, at lower carrier densities and lower resistivities < 0.1 h/e^2, the transport and magnetotransport become nearly universal.
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Submitted 31 December, 2001;
originally announced January 2002.
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Absence of Ferromagnetic Instability at the Metal-Insulator Transition in Si-inversion Layers
Authors:
V. M. Pudalov,
M. E. Gershenson,
H. Kojima
Abstract:
We have measured the Shubnikov-de Haas oscillations in high-mobility Si MOS structures over a wide range of the carrier densities n > 0.77x10^{11}/cm^2. This range includes the critical density n_c of the metal-insulator transition (2D MIT) for two samples studied. The periodicity of oscillations clearly demonstrates that the electron states remain fourfold degenerate down to and at the 2D MIT.…
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We have measured the Shubnikov-de Haas oscillations in high-mobility Si MOS structures over a wide range of the carrier densities n > 0.77x10^{11}/cm^2. This range includes the critical density n_c of the metal-insulator transition (2D MIT) for two samples studied. The periodicity of oscillations clearly demonstrates that the electron states remain fourfold degenerate down to and at the 2D MIT. Both the effective spin susceptibility χ* and mass m* remain finite and show no signatures of divergency at the critical density for both samples studied. To test possible divergency of χ*(n) and m*(n) at even lower densities, we have analyzed the data on χ*(n) and m*(n) in terms of a critical dependence χ*, m* ~ (n/n_0 -1)^{-α}. Our data suggest that χ* and m* may diverge at n_0 < 0.5x10^{11}/cm^2 (r_s > 12), which is significantly smaller than n_c.
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Submitted 14 June, 2002; v1 submitted 8 October, 2001;
originally announced October 2001.
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The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers
Authors:
V. M. Pudalov,
M. E. Gershenson,
H. Kojima,
N. Butch,
E. M. Dizhur,
G. Brunthaler,
A. Prinz,
G. Bauer
Abstract:
We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities $n\simeq (1-50) \times 10^{11}$cm$^{-2}$, which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magn…
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We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities $n\simeq (1-50) \times 10^{11}$cm$^{-2}$, which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magnetic fields, we determined the spin susceptibility $χ^*$, the effective mass $m^*$, and the $g^*$-factor for mobile electrons. These quantities increase gradually with decreasing density; near the 2D MIT, we observed enhancement of $χ^*$ by a factor of $\sim 4.7$.
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Submitted 9 October, 2001; v1 submitted 3 May, 2001;
originally announced May 2001.
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Normal-state magnetotransport in La_{1.905}Ba_{0.095}CuO_{4} single crystals
Authors:
Yasushi Abe,
Yoichi Ando,
J. Takeya,
H. Tanabe,
T. Watauchi,
I. Tanaka,
H. Kojima
Abstract:
The normal-state magnetotransport properties of La_{2-x}Ba_{x}CuO_{4} single crystals with x=0.095 are measured; at this composition, a structural transition to a low-temperature-tetragonal (LTT) phase occurs without suppression of superconductivity. None of the measured properties (in-plane and out-of-plane resistivity, magnetoresistance, and Hall coefficient) shows any sudden change at the LTT…
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The normal-state magnetotransport properties of La_{2-x}Ba_{x}CuO_{4} single crystals with x=0.095 are measured; at this composition, a structural transition to a low-temperature-tetragonal (LTT) phase occurs without suppression of superconductivity. None of the measured properties (in-plane and out-of-plane resistivity, magnetoresistance, and Hall coefficient) shows any sudden change at the LTT phase transition, indicating that the occurrence of the LTT phase does not necessarily cause an immediate change in the electronic state such as the charge-stripe stabilization.
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Submitted 21 December, 1998;
originally announced December 1998.
