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Thermoelectric Fingerprinting of Bloch- and Néel-type Skyrmions
Authors:
Christopher E. A. Barker,
Elias Saugar,
Katharina Zeissler,
Robert Puttock,
Petr Klapetek,
Olga Kazakova,
Christopher H. Marrows,
Oksana Chubykalo-Fesenko,
Craig Barton
Abstract:
Magnetic skyrmions are nanoscale spin textures that exhibit topological stability, which, along with novel thermal and electrical transport properties, make them the ideal candidates for a variety of novel technological applications. Accessing the skyrmion spin texture at the nanoscale and understanding its interaction with local thermal gradients is essential for engineering skyrmion-based transp…
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Magnetic skyrmions are nanoscale spin textures that exhibit topological stability, which, along with novel thermal and electrical transport properties, make them the ideal candidates for a variety of novel technological applications. Accessing the skyrmion spin texture at the nanoscale and understanding its interaction with local thermal gradients is essential for engineering skyrmion-based transport phenomena. However, direct experimental insight into the local thermoelectric response of single skyrmions remains limited. To address this, we employ scanning thermoelectric microscopy~(SThEM) to probe the nanoscale thermoelectric response from a single skyrmion. By mapping the local thermoelectric voltage with nanoscale precision, we reveal a unique spatially resolved response that is the convolution of the underlying spin texture of the skyrmion and its interaction with the highly localised thermal gradient originating from the heated probe. We combine this with thermoelectric modelling of a range of skyrmion spin textures to reveal unique thermoelectric responses and allow the possibility of SThEM to be used as a tool to distinguish nanoscale spin textures. These findings provide fundamental insights into the interaction of topologically protected spin textures with local thermal gradients and the resultant spin transport. We demonstrate a novel route to characterise nanoscale spin textures, accelerating the material optimisation cycle, while also opening the possibility to harness skyrmions for spin caloritronics.
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Submitted 26 June, 2025;
originally announced June 2025.
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Skyrmion motion in a synthetic antiferromagnet driven by asymmetric spin wave emission
Authors:
Christopher E. A. Barker,
Charles Parton-Barr,
Christopher H. Marrows,
Olga Kazakova,
Craig Barton
Abstract:
Skyrmions have been proposed as new information carriers in racetrack memory devices. To realise such devices, a small size; high speed of propagation; and minimal skyrmion Hall angle are required. Synthetic antiferromagnets (SAFs) present the ideal materials system to realise these aims. In this work, we use micromagnetic simulations to propose a new method for manipulating them using exclusively…
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Skyrmions have been proposed as new information carriers in racetrack memory devices. To realise such devices, a small size; high speed of propagation; and minimal skyrmion Hall angle are required. Synthetic antiferromagnets (SAFs) present the ideal materials system to realise these aims. In this work, we use micromagnetic simulations to propose a new method for manipulating them using exclusively global magnetic fields. An out-of-plane microwave field induces oscillations in the skyrmions radius which in turn emits spin waves. When a static in-plane field is added, this breaks the symmetry of the skyrmions and causes asymmetric spin wave emission. This in turn drives motion of the skyrmions, with the fastest velocities observed at the frequency of the intrinsic out-of-phase breathing mode of the pair of skyrmions. This behaviour is investigated over a range of experimentally realistic antiferromagnetic interlayer exchange coupling strengths, and the results compared to previous works studying similar motion driven with an oscillating electric field. Through this the true effect of varying the exchange coupling strength is determined, and greater insight is gained into the mechanism of skyrmion motion. These results will help to inform the design of future novel computing architectures based on the dynamics of skyrmions in synthetic antiferromagnets.
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Submitted 12 February, 2025;
originally announced February 2025.
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Quantum anomalous Hall effect for metrology
Authors:
Nathaniel J. Huáng,
Jessica L. Boland,
Kajetan M. Fijalkowski,
Charles Gould,
Thorsten Hesjedal,
Olga Kazakova,
Susmit Kumar,
Hansjörg Scherer
Abstract:
The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and realizing a universal "quantum electrical metrology toolbox" that can perform quantum resistance, voltage and current metrology in a single instrument. To realize s…
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The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and realizing a universal "quantum electrical metrology toolbox" that can perform quantum resistance, voltage and current metrology in a single instrument. To realize such promise, significant progress is still required to address materials and metrological challenges -- among which, one main challenge is to make the bulk of the topological insulator sufficiently insulating to improve the robustness of resistance quantization. In this Perspective, we present an overview of the QAHE; discuss the aspects of topological material growth and characterization; and present a path towards an QAHE resistance standard realized in magnetically doped (Bi,Sb)$_2$Te$_3$ systems. We also present guidelines and methodologies for QAHE resistance metrology, its main limitations and challenges as well as modern strategies to overcome them.
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Submitted 13 January, 2025;
originally announced January 2025.
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Materials for Quantum Technologies: a Roadmap for Spin and Topology
Authors:
N. Banerjee,
C. Bell,
C. Ciccarelli,
T. Hesjedal,
F. Johnson,
H. Kurebayashi,
T. A. Moore,
C. Moutafis,
H. L. Stern,
I. J. Vera-Marun,
J. Wade,
C. Barton,
M. R. Connolly,
N. J. Curson,
K. Fallon,
A. J. Fisher,
D. A. Gangloff,
W. Griggs,
E. Linfield,
C. H. Marrows,
A. Rossi,
F. Schindler,
J. Smith,
T. Thomson,
O. Kazakova
Abstract:
This Roadmap provides an overview of the critical role of materials in exploiting spin and topology for next-generation quantum technologies including computing, sensing, information storage and networking devices. We explore the key materials systems that support spin and topological phenomena and discuss their figures of merit. Spin and topology-based quantum technologies have several advantages…
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This Roadmap provides an overview of the critical role of materials in exploiting spin and topology for next-generation quantum technologies including computing, sensing, information storage and networking devices. We explore the key materials systems that support spin and topological phenomena and discuss their figures of merit. Spin and topology-based quantum technologies have several advantages over their classical, charged-based counterparts, including non-volatility, faster data processing speeds, higher integration densities and lower power consumption. We discuss the main challenges facing the field, identify strategies to overcome them, and provide a realistic outlook on future possibilities of spin-based and topological materials in quantum technology applications.
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Submitted 11 June, 2024;
originally announced June 2024.
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snompy: a package for modelling scattering-type scanning near-field optical microscopy
Authors:
Tom Vincent,
Xinyun Liu,
Daniel Johnson,
Lars Mester,
Nathaniel Huang,
Olga Kazakova,
Rainer Hillenbrand,
Jessica Louise Boland
Abstract:
Scattering-type scanning near-field optical microscopy (s-SNOM) is a powerful technique for extreme subwavelength imaging and spectroscopy, with around 20 nm spatial resolution. But quantitative relationships between experiment and material properties requires modelling, which can be computationally and conceptually challenging. In this work, we present snompy an open-source Python library which c…
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Scattering-type scanning near-field optical microscopy (s-SNOM) is a powerful technique for extreme subwavelength imaging and spectroscopy, with around 20 nm spatial resolution. But quantitative relationships between experiment and material properties requires modelling, which can be computationally and conceptually challenging. In this work, we present snompy an open-source Python library which contains implementations of two of the most common s-SNOM models, the finite dipole model (FDM) and the point dipole model (PDM). We show a series of typical uses for this package with demonstrations including simulating nano-Fourier transform infrared (FTIR) spectra and recovering permittivity from experimental s-SNOM data. We also discuss the challenges faced with this sort of modelling, such as competing descriptions of the models in literature, and finite size effects. We hope that snompy will make quantitative s-SNOM modelling more accessible to the wider research community, which will further empower the use of s-SNOM for investigating nanoscale material properties.
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Submitted 31 May, 2024;
originally announced May 2024.
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Phase Coexistence and Transitions between Antiferromagnetic and Ferromagnetic States in a Synthetic Antiferromagnet
Authors:
Christopher E. A. Barker,
Kayla Fallon,
Craig Barton,
Eloi Haltz,
Trevor P. Almeida,
Sara Villa,
Colin Kirkbride,
Francesco Maccherozzi,
Brice Sarpi,
Sarnjeet S. Dhesi,
Damien McGrouther,
Stephen McVitie,
Thomas A. Moore,
Olga Kazakova,
Christopher H. Marrows
Abstract:
In synthetic antiferromagnets (SAFs) the combination of antiferromagnetic order and synthesis using conventional sputtering techniques is combined to produce systems that are advantageous for spintronics applications. Here we present the preparation and study of SAF multilayers possessing both perpendicular magnetic anisotropy and the Dzyaloshinskii-Moriya interaction. The multilayers have an anti…
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In synthetic antiferromagnets (SAFs) the combination of antiferromagnetic order and synthesis using conventional sputtering techniques is combined to produce systems that are advantageous for spintronics applications. Here we present the preparation and study of SAF multilayers possessing both perpendicular magnetic anisotropy and the Dzyaloshinskii-Moriya interaction. The multilayers have an antiferromagnetically (AF) aligned ground state but can be forced into a full ferromagnetic (FM) alignment by applying an out-of-plane field $\sim 100$~mT. We study the spin textures in these multilayers in their ground state as well as around the transition point between the AF and FM states, at fields $\sim 40$~mT, by imaging the spin textures using complementary methods: photo-emission electron, magnetic force, and Lorentz transmission electron microscopies. The transformation into a FM state by field proceeds by a nucleation and growth process, where first skyrmionic nuclei form, which broaden into regions containing a FM-aligned labyrinth pattern that eventually occupies the whole film. This process remarkably occurs without any significant change in the net magnetic moment of the multilayer. The mix of AF- and FM-aligned regions on the micron scale in the middle of this transition is reminiscent of a first-order phase transition that exhibits phase coexistence. These results are important for guiding the design of spintronic devices using chiral magnetic textures made from SAFs.
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Submitted 2 February, 2024; v1 submitted 29 January, 2024;
originally announced January 2024.
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Curvature-enhanced localised emission from dark states in wrinkled monolayer WSe2 at room temperature
Authors:
Sebastian Wood,
Filipe Richheimer,
Tom Vincent,
Vivian Tong,
Alessandro Catanzaro,
Yameng Cao,
Olga Kazakova,
Fernando A. Castro
Abstract:
Localised emission from defect states in monolayer transition metal dichalcogenides is of great interest for optoelectronic and quantum device applications. Recent progress towards high temperature localised emission relies on the application of strain to induce highly confined excitonic states. Here we propose an alternative paradigm based on curvature, rather than in-plane stretching, achieved t…
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Localised emission from defect states in monolayer transition metal dichalcogenides is of great interest for optoelectronic and quantum device applications. Recent progress towards high temperature localised emission relies on the application of strain to induce highly confined excitonic states. Here we propose an alternative paradigm based on curvature, rather than in-plane stretching, achieved through free-standing wrinkles of monolayer tungsten diselenide (WSe2). We probe these nanostructures using tip-enhanced optical spectroscopy to reveal the spatial localisation of out-of-plane polarised emission from the WSe2 wrinkles. Based on the photoluminescence and Raman scattering signatures resolved with nanoscale spatial resolution, we propose the existence of a manifold of spin-forbidden excitonic states that are activated by the local curvature of the WSe2. We are able to access these dark states through the out-of-plane polarised surface plasmon polariton resulting in enhanced strongly localised emission at room temperature, which is of potential interest for quantum technologies and photonic devices.
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Submitted 2 May, 2023;
originally announced May 2023.
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Manipulation of magnetic skyrmions in continuous Ir/Co/Pt multilayers
Authors:
M. Cubukcu,
S. Pollath,
S. Tacchi,
A. Stacey,
E. Darwin,
C. W. F. Freeman,
C. Barton,
B. J. Hickey,
C. H. Marrows,
G. Carlotti,
C. H. Back,
O. Kazakova
Abstract:
We show that magnetic skyrmions can be stabilized at room temperature in continuous Ir/Co/Pt multilayers on SiO2/Si substrate without prior application of electric current or magnetic field. While decreasing the Co thickness, tuning of the magnetic anisotropy gives rise to a transition from worm-like domain patterns to long and separate stripes. The skyrmions are clearly imaged in both states usin…
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We show that magnetic skyrmions can be stabilized at room temperature in continuous Ir/Co/Pt multilayers on SiO2/Si substrate without prior application of electric current or magnetic field. While decreasing the Co thickness, tuning of the magnetic anisotropy gives rise to a transition from worm-like domain patterns to long and separate stripes. The skyrmions are clearly imaged in both states using Magnetic Force Microscopy. The density of skyrmions can be significantly enhanced after applying the in-plane field procedure. In addition, we have investigated the phase diagram of a sample deposited in the same run, but onto a SiNx membrane using Lorentz transmission electron microscopy. Interestingly, this sample shows a different behaviour as function of magnetic field hinting to the influence of strain on the phase diagram of skyrmions in thin film multilayers. Our results provide means to manipulate skyrmion, further allowing for optimized engineering of skyrmion-based devices.
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Submitted 24 November, 2021;
originally announced November 2021.
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Interfacial ferroelectricity in marginally twisted 2D semiconductors
Authors:
Astrid Weston,
Eli G Castanon,
Vladimir Enaldiev,
Fabio Ferreira,
Shubhadeep Bhattacharjee,
Shuigang Xu,
Hector Corte-Leon,
Zefei Wu,
Nickolas Clark,
Alex Summerfield,
Teruo Hashimoto,
Yunze Gao,
Wendong Wang,
Matthew Hamer,
Harriet Read,
Laura Fumagalli,
Andrey V Kretinin,
Sarah J. Haigh,
Olga Kazakova,
A. K. Geim,
Vladimir I. Fal'ko,
Roman Gorbachev
Abstract:
Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crysta…
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Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarisation arranged into a twist-controlled network. The latter can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The interfacial charge transfer for the observed ferroelectric domains is quantified using Kelvin probe force microscopy and agrees well with theoretical calculations. The movement of domain walls and their bending rigidity also agrees well with our modelling results. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential venue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions.
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Submitted 14 August, 2021;
originally announced August 2021.
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Data cluster analysis and machine learning for classification of twisted bilayer graphene
Authors:
Tom Vincent,
Kenji Kawahara,
Vladimir Antonov,
Hiroki Ago,
Olga Kazakova
Abstract:
Twisted bilayer graphene (TBLG) has emerged as an exciting new material with tunable electronic properties ranging from superconductivity to correlated insulating phases. But current methods of fabrication and identification of TBLG are painstaking and laborious. In this work, we combine Raman spectroscopy with the Gaussian mixture model (GMM) data clustering algorithm to identify areas with parti…
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Twisted bilayer graphene (TBLG) has emerged as an exciting new material with tunable electronic properties ranging from superconductivity to correlated insulating phases. But current methods of fabrication and identification of TBLG are painstaking and laborious. In this work, we combine Raman spectroscopy with the Gaussian mixture model (GMM) data clustering algorithm to identify areas with particular twist angles, from a TBLG sample with a mixture of orientations. We present two approaches to this cluster analysis: training the GMM on Raman parameters returned by peak fits, and on full Raman spectra with dimensionality reduced by principal component analysis. In both cases we demonstrate that GMM can identify regions of distinct twist angle from within Raman datacubes. We also show that once a model has been trained, and the identified clusters labelled, the model can be reapplied to new Raman scans to assess the similarity between the materials in the new region and the testing region. This could enable high-throughput fabrication of TBLG, by allowing computerised detection of particular twist angles from automated large-area scans.
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Submitted 19 July, 2021;
originally announced July 2021.
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Tailoring interfacial effect in multilayers with Dzyaloshinskii-Moriya interaction by helium ion irradiation
Authors:
A. Sud,
S. Tacchi,
D. Sagkovits,
C. Barton,
M. Sall,
L. H. Diez,
E. Stylianidis,
N. Smith,
L. Wright,
S. Zhang,
X. Zhang,
D. Ravelosona,
G. Carlotti,
H. Kurebayashi,
O. Kazakova,
M. Cubukcu
Abstract:
We show a method to control magnetic interfacial effects in multilayers with Dzyaloshinskii-Moriya interaction (DMI) using helium (He$^{+}$) ion irradiation. We report results from SQUID magnetometry, ferromagnetic resonance as well as Brillouin light scattering results on multilayers with DMI as a function of irradiation fluence to study the effect of irradiation on the magnetic properties of the…
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We show a method to control magnetic interfacial effects in multilayers with Dzyaloshinskii-Moriya interaction (DMI) using helium (He$^{+}$) ion irradiation. We report results from SQUID magnetometry, ferromagnetic resonance as well as Brillouin light scattering results on multilayers with DMI as a function of irradiation fluence to study the effect of irradiation on the magnetic properties of the multilayers. Our results show clear evidence of the He$^{+}$ irradiation effects on the magnetic properties which is consistent with interface modification due to the effects of the He$^{+}$ irradiation. This external degree of freedom offers promising perspectives to further improve the control of magnetic skyrmions in multilayers, that could push them towards integration in future technologies.
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Submitted 18 September, 2021; v1 submitted 9 May, 2021;
originally announced May 2021.
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Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook
Authors:
Tom Vincent,
Jiayun Liang,
Simrjit Singh,
Eli G. Castanon,
Xiaotian Zhang,
Amber McCreary,
Deep Jariwala,
Olga Kazakova,
Zakaria Y. Al Balushi
Abstract:
The interest in two-dimensional and layered materials continues to expand, driven by the compelling properties of individual atomic layers that can be stacked and/or twisted into synthetic heterostructures. The plethora of electronic properties as well as the emergence of many different quasiparticles, including plasmons, polaritons, trions and excitons with large, tunable binding energies that al…
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The interest in two-dimensional and layered materials continues to expand, driven by the compelling properties of individual atomic layers that can be stacked and/or twisted into synthetic heterostructures. The plethora of electronic properties as well as the emergence of many different quasiparticles, including plasmons, polaritons, trions and excitons with large, tunable binding energies that all can be controlled and modulated through electrical means has given rise to many device applications. In addition, these materials exhibit both room-temperature spin and valley polarization, magnetism, superconductivity, piezoelectricity that are intricately dependent on the composition, crystal structure, stacking, twist angle, layer number and phases of these materials. Initial results on graphene exfoliated from single bulk crystals motivated the development of wide-area, high purity synthesis and heterojunctions with atomically clean interfaces. Now by opening this design space to new synthetic two-dimensional materials "beyond graphene", it is possible to explore uncharted opportunities in designing novel heterostructures for electrical tunable devices. To fully reveal the emerging functionalities and opportunities of these atomically thin materials in practical applications, this review highlights several representative and noteworthy research directions in the use of electrical means to tune these aforementioned physical and structural properties, with an emphasis on discussing major applications of beyond graphene 2D materials in tunable devices in the past few years and an outlook of what is to come in the next decade.
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Submitted 25 March, 2021;
originally announced March 2021.
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Thermoelectric signature of individual skyrmions
Authors:
Alexander Fernández Scarioni,
Craig Barton,
Héctor Corte-León,
Sibylle Sievers,
Xiukun Hu,
Fernando Ajejas,
William Legrand,
Nicolas Reyren,
Vincent Cros,
Olga Kazakova,
Hans W. Schumacher
Abstract:
We experimentally study the thermoelectrical signature of individual skyrmions in chiral Pt/Co/Ru multilayers. Using a combination of controlled nucleation, single skyrmion annihilation, and magnetic field dependent measurements the thermoelectric signature of individual skyrmions is characterized. The observed signature is explained by the anomalous Nernst effect of the skyrmions spin structure.…
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We experimentally study the thermoelectrical signature of individual skyrmions in chiral Pt/Co/Ru multilayers. Using a combination of controlled nucleation, single skyrmion annihilation, and magnetic field dependent measurements the thermoelectric signature of individual skyrmions is characterized. The observed signature is explained by the anomalous Nernst effect of the skyrmions spin structure. Possible topological contributions to the observed thermoelectrical signature are discussed. Such thermoelectrical characterization allows for non-invasive detection and counting of skyrmions and enables fundamental studies of topological thermoelectric effects on the nano scale
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Submitted 17 April, 2020; v1 submitted 28 January, 2020;
originally announced January 2020.
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Strongly Absorbing Nanoscale Infrared Domains within Graphene Bubbles
Authors:
Tom Vincent,
Matthew Hamer,
Irina Grigorieva,
Vladimir Antonov,
Alexander Tzalenchuk,
Olga Kazakova
Abstract:
Graphene has shown great potential for modulating infrared (IR) light in devices as small as 350 nm. At these length scales, nanoscale features of devices, and their interaction with light, can be expected to play a significant role in device performance. Bubbles in van der Waals heterostructures are one such feature, which have recently attracted considerable attention thanks to their ability to…
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Graphene has shown great potential for modulating infrared (IR) light in devices as small as 350 nm. At these length scales, nanoscale features of devices, and their interaction with light, can be expected to play a significant role in device performance. Bubbles in van der Waals heterostructures are one such feature, which have recently attracted considerable attention thanks to their ability to modify the optoelectronic properties of 2D materials through strain. Here we use scattering-type scanning near-field optical microscopy (sSNOM) to measure the nanoscale IR response from a network of variously shaped bubbles in hexagonal boron nitride (hBN)-encapsulated graphene. We show that within individual bubbles there are distinct domains with strongly enhanced IR absorption. We correlate this with strain in the graphene, found with confocal Raman microscopy and vector decomposition analysis. This reveals intricate and varied strain configurations, in which bubbles of different shape induce more bi- or uniaxial strain configurations. Ridges in the bubbles, seen by atomic force microscopy (AFM), coincide with the domain boundaries, which leads us to attribute the domains to nanoscale strain differences in the graphene. This reveals pathways towards future strain-based graphene IR devices.
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Submitted 27 December, 2019;
originally announced December 2019.
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Modal frustration and periodicity breaking in artificial spin ice
Authors:
R. Puttock,
A. Manzin,
V. Neu,
F. Garcia Sanchez,
A. Fernandez Scarioni,
H. W. Schumacher,
O. Kazakova
Abstract:
Here an artificial spin ice (ASI) lattice is introduced that exhibits unique Ising and non-Ising behavior under specific field switching protocols because of the inclusion of coupled nanomagnets into the unit cell. In the Ising regime, a magnetic switching mechanism that generates a uni- or bimodal distribution of states dependent on the alignment of the field is demonstrated with respect to the l…
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Here an artificial spin ice (ASI) lattice is introduced that exhibits unique Ising and non-Ising behavior under specific field switching protocols because of the inclusion of coupled nanomagnets into the unit cell. In the Ising regime, a magnetic switching mechanism that generates a uni- or bimodal distribution of states dependent on the alignment of the field is demonstrated with respect to the lattice unit cell. In addition, a method for generating a plethora of randomly distributed energy states across the lattice, consisting of Ising and Landau states, is investigated through magnetic force microscopy and micromagnetic modeling. We demonstrate that the dispersed energy distribution across the lattice is a result of the intrinsic design and can be finely tuned through control of the incident angle of a critical field. The present manuscript explores a complex frustrated environment beyond the 16-vertex Ising model for the development of novel logic-based technologies.
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Submitted 28 September, 2020; v1 submitted 16 September, 2019;
originally announced September 2019.
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Nanoscale patterning of quasiparticle band alignment
Authors:
Søren Ulstrup,
Cristina E. Giusca,
Jill A. Miwa,
Charlotte E. Sanders,
Alex Browning,
Pavel Dudin,
Cephise Cacho,
Olga Kazakova,
D. Kurt Gaskill,
Rachael L. Myers-Ward,
Tianyi Zhang,
Mauricio Terrones,
Philip Hofmann
Abstract:
Control of atomic-scale interfaces between materials with distinct electronic structures is crucial for the design and fabrication of most electronic devices. In the case of two-dimensional (2D) materials, disparate electronic structures can be realized even within a single uniform sheet, merely by locally applying different vertical bias voltages. Indeed, it has been suggested that nanoscale elec…
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Control of atomic-scale interfaces between materials with distinct electronic structures is crucial for the design and fabrication of most electronic devices. In the case of two-dimensional (2D) materials, disparate electronic structures can be realized even within a single uniform sheet, merely by locally applying different vertical bias voltages. Indeed, it has been suggested that nanoscale electronic patterning in a single sheet can be achieved by placing the 2D material on a suitably pre-patterned substrate, exploiting the sensitivity of 2D materials to their environment via band alignment, screening or hybridization. Here, we utilize the inherently nano-structured single layer (SL) and bilayer (BL) graphene on silicon carbide to laterally tune the electrostatic gating of adjacent SL tungsten disulphide (WS$_2$) in a van der Waals heterostructure. The electronic band alignments are mapped in energy and momentum space using angle-resolved photoemission with a spatial resolution on the order of 500~nm (nanoARPES). We find that the SL WS$_2$ band offsets track the work function of the underlying SL and BL graphene, and we relate such changes to observed lateral patterns of exciton and trion luminescence from SL WS$_2$, demonstrating ultimate control of optoelectronic properties at the nanoscale.
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Submitted 13 March, 2019;
originally announced March 2019.
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Individual skyrmion manipulation by local magnetic field gradients
Authors:
Arianna Casiraghi,
Héctor Corte-León,
Mehran Vafaee,
Felipe Garcia-Sanchez,
Gianfranco Durin,
Massimo Pasquale,
Gerhard Jakob,
Mathias Kläui,
Olga Kazakova
Abstract:
Magnetic skyrmions are topologically protected spin textures, stabilised in systems with strong Dzyaloshinskii-Moriya interaction (DMI). Several studies have shown that electrical currents can move skyrmions efficiently through spin-orbit torques. While promising for technological applications, current-driven skyrmion motion is intrinsically collective and accompanied by undesired heating effects.…
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Magnetic skyrmions are topologically protected spin textures, stabilised in systems with strong Dzyaloshinskii-Moriya interaction (DMI). Several studies have shown that electrical currents can move skyrmions efficiently through spin-orbit torques. While promising for technological applications, current-driven skyrmion motion is intrinsically collective and accompanied by undesired heating effects. Here we demonstrate a new approach to control individual skyrmion positions precisely, which relies on the magnetic interaction between sample and a magnetic force microscopy (MFM) probe. We investigate perpendicularly magnetised X/CoFeB/MgO multilayers, where for X = W or Pt the DMI is sufficiently strong to allow for skyrmion nucleation in an applied field. We show that these skyrmions can be manipulated individually through the local field gradient generated by the scanning MFM probe with an unprecedented level of accuracy. Furthermore, we show that the probe stray field can assist skyrmion nucleation. Our proof-of-concepts results offer current-free paradigms to efficient individual skyrmion control.
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Submitted 1 March, 2019;
originally announced March 2019.
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Probing the nanoscale origin of strain and doping in graphene-hBN heterostructures
Authors:
Tom Vincent,
Vishal Panchal,
Tim Booth,
Stephen R. Power,
Antti-Pekka Jauho,
Vladimir Antonov,
Olga Kazakova
Abstract:
We use confocal Raman microscopy and modified vector analysis methods to investigate the nanoscale origin of strain and carrier concentration in exfoliated graphene-hexagonal boron nitride (hBN) heterostructures on silicon dioxide (SiO2). Two types of heterostructures are studied: graphene on SiO2 partially coved by hBN, and graphene fully encapsulated between two hBN flakes. We extend the vector…
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We use confocal Raman microscopy and modified vector analysis methods to investigate the nanoscale origin of strain and carrier concentration in exfoliated graphene-hexagonal boron nitride (hBN) heterostructures on silicon dioxide (SiO2). Two types of heterostructures are studied: graphene on SiO2 partially coved by hBN, and graphene fully encapsulated between two hBN flakes. We extend the vector analysis methods to produce spatial maps of the strain and doping variation across the heterostructures. This allows us to visualise and directly quantify the much-speculated effect of the environment on carrier concentration as well as strain in graphene. Moreover, we demonstrate that variations in strain and carrier concentration in graphene arise from nanoscale features of the heterostructures such as fractures, folds and bubbles trapped between layers. For bubbles in hBN-encapsulated graphene, hydrostatic strain is shown to be greatest at bubble centres, whereas the maximum of carrier concentration is localised at bubble edges. Raman spectroscopy is shown to be a non-invasive tool for probing strain and doping in graphene, which could prove useful for engineering of two-dimensional devices.
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Submitted 31 October, 2018;
originally announced October 2018.
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Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructures
Authors:
Daniel J. Terry,
Viktor Zólyomi,
Matthew Hamer,
Anastasia V. Tyurnina,
David G. Hopkinson,
Alexander M. Rakowski,
Samuel J. Magorrian,
Nick Clark,
Yuri M. Andreev,
Olga Kazakova,
Konstantin Novoselov,
Sarah J. Haigh,
Vladimir I. Fal'ko,
Roman Gorbachev
Abstract:
Two-dimensional semiconductors - atomic layers of materials with covalent intra-layer bonding and weak (van der Waals or quadrupole) coupling between the layers - are a new class of materials with great potential for optoelectronic applications. Among those, a special position is now being taken by post-transition metal chalcogenides (PTMC), InSe and GaSe. It has recently been found that the band…
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Two-dimensional semiconductors - atomic layers of materials with covalent intra-layer bonding and weak (van der Waals or quadrupole) coupling between the layers - are a new class of materials with great potential for optoelectronic applications. Among those, a special position is now being taken by post-transition metal chalcogenides (PTMC), InSe and GaSe. It has recently been found that the band gap in 2D crystals of InSe more than doubles in the monolayer compared to thick multilayer crystals, while the high mobility of conduction band electrons is promoted by their light in-plane mass. Here, we use Raman and PL measurements of encapsulated few layer samples, coupled with accurate atomic force and transmission electron microscope structural characterisation to reveal new optical properties of atomically thin GaSe preserved by hBN encapsulation. The band gaps we observe complement the spectral range provided by InSe films, so that optical activity of these two almost lattice-matched PTMC films and their heterostructures densely cover the spectrum of photons from violet to infrared. We demonstrate the realisation of the latter by the first observation of interlayer excitonic photoluminescence in few-layer InSe-GaSe heterostructures. The spatially indirect transition is direct in k-space and therefore is bright, while its energy can be tuned in a broad range by the number of layers.
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Submitted 3 October, 2018;
originally announced October 2018.
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Wide-Band Nano-Imaging of Plasmon Dispersion and Hotspots in Quasi-Free-Standing Epitaxial Graphene
Authors:
William S. Hart,
Vishal Panchal,
Christos Melios,
Włodek Strupiński,
Olga Kazakova,
Chris C. Phillips
Abstract:
We report observation of graphene plasmon interference fringes across a wide spectral range using a scattering scanning near-field optical microscope (s-SNOM) that employs a widely tunable bank of quantum cascade lasers. We use plasmon interference to measure the dispersion curve of graphene plasmons over more than an order of magnitude of plasmon wavelength, from $λ_{sp}$ ~140 to ~1700 nm, and ex…
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We report observation of graphene plasmon interference fringes across a wide spectral range using a scattering scanning near-field optical microscope (s-SNOM) that employs a widely tunable bank of quantum cascade lasers. We use plasmon interference to measure the dispersion curve of graphene plasmons over more than an order of magnitude of plasmon wavelength, from $λ_{sp}$ ~140 to ~1700 nm, and extract the electron Fermi energy of 298$\pm$4 meV for hydrogen-intercalated single layer epitaxial graphene on SiC. Furthermore, we demonstrate the appearance of wavelength tuneable graphene plasmon reflection "hotspots" at single-layer/bi-layer interfaces. This work demonstrates the capability of wide-band nano-imaging to precisely measure the electrical properties of graphene and spatially control plasmon reflection focusing.
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Submitted 25 May, 2018;
originally announced May 2018.
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Modeling of graphene Hall effect sensors for microbead detection
Authors:
A. Manzin,
E. Simonetto,
G. Amato,
V. Panchal,
O. Kazakova
Abstract:
This paper deals with the modeling of sensitivity of epitaxial graphene Hall bars, from sub-micrometer to micrometer size, to the stray field generated by a magnetic microbead. To demonstrate experiment feasibility, the model is first validated by comparison to measurement results, considering an ac-dc detection scheme. Then, an exhaustive numerical analysis is performed to investigate signal detr…
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This paper deals with the modeling of sensitivity of epitaxial graphene Hall bars, from sub-micrometer to micrometer size, to the stray field generated by a magnetic microbead. To demonstrate experiment feasibility, the model is first validated by comparison to measurement results, considering an ac-dc detection scheme. Then, an exhaustive numerical analysis is performed to investigate signal detriment caused by material defects, saturation of bead magnetization at high fields, increment of bead distance from sensor surface and device width increase.
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Submitted 4 May, 2018;
originally announced May 2018.
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Unique excitonic effects in tungsten disulphide monolayers on two-layer graphene
Authors:
Cristina E. Giusca,
Ivan Rungger,
Vishal Panchal,
Christos Melios,
Zhong Lin,
Yu-Chuan Lin,
Ethan Kahn,
Ana Laura Elías,
Joshua A. Robinson,
Mauricio Terrones,
Olga Kazakova
Abstract:
Light emission in atomically thin heterostructures is known to depend on the type of materials, number and stacking sequence of the constituent layers. Here we show that the thickness of a two-dimensional substrate can be crucial in modulating the light emission. We study the layer-dependent charge transfer in vertical heterostructures built from monolayer tungsten disulphide (WS2) on one- and two…
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Light emission in atomically thin heterostructures is known to depend on the type of materials, number and stacking sequence of the constituent layers. Here we show that the thickness of a two-dimensional substrate can be crucial in modulating the light emission. We study the layer-dependent charge transfer in vertical heterostructures built from monolayer tungsten disulphide (WS2) on one- and two-layer epitaxial graphene, unravelling the effect that the interlayer electronic coupling has on the excitonic properties of such heterostructures. We bring evidence that the excitonic properties of WS2 can be effectively tuned by the number of supporting graphene layers. Integrating WS2 monolayers with two-layer graphene leads to a significant enhancement of the photoluminescence response, up to one order of magnitude higher compared to WS2 supported on one-layer graphene. Our findings highlight the importance of substrate engineering when constructing atomically thin layered heterostructures.
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Submitted 27 April, 2018;
originally announced April 2018.
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Thickness dependent hydrophobicity of epitaxial graphene
Authors:
M. Munz,
C. E. Giusca,
R. L. Myers-Ward,
D. K. Gaskill,
O. Kazakova
Abstract:
This article addresses the much debated question whether the degree of hydrophobicity of single-layer graphene (1LG) is different from the one of double-layer graphene (2LG). Knowledge of the water affinity of graphene and its spatial variations is critically important as it can affect the graphene properties as well as the performance of graphene devices exposed to humidity. By employing chemical…
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This article addresses the much debated question whether the degree of hydrophobicity of single-layer graphene (1LG) is different from the one of double-layer graphene (2LG). Knowledge of the water affinity of graphene and its spatial variations is critically important as it can affect the graphene properties as well as the performance of graphene devices exposed to humidity. By employing chemical force microscopy (CFM) with a probe rendered hydrophobic by functionalization with octadecyltrichlorosilane (OTS), the adhesion force between the probe and epitaxial graphene on SiC has been measured in deionized water. Owing to the hydrophobic attraction, a larger adhesion force was measured on 2LG domains of graphene surfaces, thus showing that 2LG is more hydrophobic than 1LG. Identification of 1LG and 2LG domains was achieved through Kelvin probe force microscopy and Raman spectral mapping. Approximate values of the adhesion force per OTS molecule have been calculated through contact area analysis. Furthermore, the contrast of friction force images measured in contact mode was reversed to the 1LG/2LG adhesion contrast and its origin was discussed in terms of the likely water depletion over hydrophobic domains as well as deformation in the contact area between AFM tip and 1LG.
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Submitted 26 April, 2018;
originally announced April 2018.
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Water affinity to epitaxial graphene: the impact of layer thickness
Authors:
Cristina E. Giusca,
Vishal Panchal,
Martin Munz,
Virginia D. Wheeler,
Luke O. Nyakiti,
Rachael L. Myers-Ward,
D. Kurt Gaskill,
Olga Kazakova
Abstract:
The sensitivity to water of epitaxial graphene is examined in this study.
The sensitivity to water of epitaxial graphene is examined in this study.
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Submitted 26 April, 2018;
originally announced April 2018.
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Role of substrate on interaction of water molecules with graphene oxide and reduced graphene oxide
Authors:
Roman Strzelczyk,
Cristina E. Giusca,
Francesco Perrozzi,
Giulia Fioravanti,
Luca Ottaviano,
Olga Kazakova
Abstract:
We study local electronic properties of graphene oxide (GO) and reduced graphene oxide (RGO) on metallic (Pt) and insulating (Si3N4) substrates in controlled humidity environment. We demonstrate that the supporting substrate plays a crucial role in interaction of these materials with water, with Pt making both GO and RGO insensitive to humidity variations and change in environment. On the other ha…
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We study local electronic properties of graphene oxide (GO) and reduced graphene oxide (RGO) on metallic (Pt) and insulating (Si3N4) substrates in controlled humidity environment. We demonstrate that the supporting substrate plays a crucial role in interaction of these materials with water, with Pt making both GO and RGO insensitive to humidity variations and change in environment. On the other hand, in the case of Si3N4 substrate a significant difference between GO and RGO with respect to humidity variations is demonstrated, indicating complete water coverage at ~60% R.H for RGO and ~30% R.H. for GO. Irrespective of the substrate, both GO and RGO demonstrate relative independence of their electronic properties on the material thickness, with similar trends observed for 1, 2 and 3 layers when subject to humidity variations. This indicates a relatively minor role of material thickness in GO-based humidity sensors.
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Submitted 26 April, 2018;
originally announced April 2018.
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Correlation of structural, nanomechanical and electrostatic properties of single and few-layers MoS2
Authors:
Benjamin J. Robinson,
Cristina E. Giusca,
Yurema Teijeiro Gonzalez,
Nicholas D. Kay,
Olga Kazakova,
Oleg V. Kolosov
Abstract:
We have decoupled the intrinsic optical and electrostatic effects arising in monolayer and few-layer molybdenum disulphide from those influenced by the flake-substrate interaction.
We have decoupled the intrinsic optical and electrostatic effects arising in monolayer and few-layer molybdenum disulphide from those influenced by the flake-substrate interaction.
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Submitted 26 April, 2018;
originally announced April 2018.
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Visualisation of edge effects in side-gated graphene nanodevices
Authors:
Vishal Panchal,
Arseniy Lartsev,
Alessandra Manzin,
Rositza Yakimova,
Alexander Tzalenchuk,
Olga Kazakova
Abstract:
Using local scanning electrical techniques we study edge effects in side-gated Hall nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of ~60-125 nm width, whereas the bulk of the material is electron doped. The effect is the most pronounced when the influence of atmospheric contamination…
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Using local scanning electrical techniques we study edge effects in side-gated Hall nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of ~60-125 nm width, whereas the bulk of the material is electron doped. The effect is the most pronounced when the influence of atmospheric contamination is minimal. We also show that the electronic properties at the edges can be precisely tuned from hole to electron conduction by using moderate strength electrical fields created by side-gates. However, the central part of the channel remains relatively unaffected by the side-gates and retains the bulk properties of graphene.
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Submitted 25 April, 2018;
originally announced April 2018.
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Atmospheric doping effects in epitaxial graphene: correlation of local and global electrical measurements
Authors:
Vishal Panchal,
Cristina E. Giusca,
Arseniy Lartsev,
Nicholas A. Martin,
Nathan Cassidy,
Rachael L. Myers-Ward,
D. Kurt Gaskill,
Olga Kazakova
Abstract:
We directly correlate the local (20-nm scale) and global electronic properties of a device containing mono-, bi- and tri-layer epitaxial graphene (EG) domains on 6H-SiC(0001) by simultaneously performing local surface potential measurements using Kelvin probe force microscopy and global transport measurements. Using well-controlled environmental conditions, where the starting state of the surface…
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We directly correlate the local (20-nm scale) and global electronic properties of a device containing mono-, bi- and tri-layer epitaxial graphene (EG) domains on 6H-SiC(0001) by simultaneously performing local surface potential measurements using Kelvin probe force microscopy and global transport measurements. Using well-controlled environmental conditions, where the starting state of the surface can be reproducibly defined, we investigate the doping effects of N2, O2, water vapour and NO2 at concentrations representative of the ambient air. We show that presence of O2, water vapour and NO2 leads to p-doping of all EG domains. However, the thicker layers of EG are significantly less affected by the atmospheric dopants. Furthermore, we demonstrate that the general consensus of O2 and water vapour present in ambient air providing majority of the p-doping to graphene is a common misconception. We experimentally show that even the combined effect of O2, water vapour, and NO2 at concentrations higher than typically present in the atmosphere does not fully replicate the state of the EG surface in ambient air. All doping effects can be reproducibly reversed by vacuum annealing. Thus, for EG gas sensors it is essential to consider naturally occurring environmental effects and properly separate them from those coming from targeted species.
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Submitted 25 April, 2018;
originally announced April 2018.
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Water on graphene: Review of recent progress
Authors:
Christos Melios,
Cristina E. Giusca,
Vishal Panchal,
Olga Kazakova
Abstract:
The sensitivity of graphene to the surrounding environment is given by its π electrons, which are directly exposed to molecules in the ambient. The high sensitivity of graphene to the local environment has shown to be both advantageous but also problematic for graphene-based devices, such as transistors and sensors, where the graphene carrier concentration and mobility change due to ambient humidi…
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The sensitivity of graphene to the surrounding environment is given by its π electrons, which are directly exposed to molecules in the ambient. The high sensitivity of graphene to the local environment has shown to be both advantageous but also problematic for graphene-based devices, such as transistors and sensors, where the graphene carrier concentration and mobility change due to ambient humidity variations. In this review, recent progress in understanding the effects of water on different types of graphene, grown epitaxially and quasi-free standing on SiC, by chemical vapour deposition on SiO2, as well as exfoliated flakes, are presented. It is demonstrated that water withdraws electrons from graphene, but the graphene-water interaction highly depends on the thickness, layer stacking, underlying substrate and substrate-induced doping. Moreover, we highlight the importance of clear and unambiguous description of the environmental conditions (i.e. relative humidity) whenever a routine characterisation for carrier concentration and mobility is reported (often presented as a simple figure-of-merit), as these electrical characteristics are highly dependent on the adsorbed molecules and the surrounding environment.
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Submitted 26 April, 2018; v1 submitted 25 April, 2018;
originally announced April 2018.
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Tuning epitaxial graphene sensitivity to water by hydrogen intercalation
Authors:
Christos Melios,
Michael Winters,
Wlodek Strupinski,
Vishal Panchal,
Cristina E. Giusca,
K. D. G. Imalka Jayawardena,
Niklas Rorsman,
S. Ravi P. Silva,
Olga Kazakova
Abstract:
The effects of humidity on the electronic properties of quasi-free standing one layer graphene (QFS 1LG) are investigated via simultaneous magneto-transport in the van der Pauw geometry and local work function measurements in a controlled environment. QFS 1LG on 4H-SiC(0001) is obtained by hydrogen intercalation of the interfacial layer. In this system, the carrier concentration experiences a two-…
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The effects of humidity on the electronic properties of quasi-free standing one layer graphene (QFS 1LG) are investigated via simultaneous magneto-transport in the van der Pauw geometry and local work function measurements in a controlled environment. QFS 1LG on 4H-SiC(0001) is obtained by hydrogen intercalation of the interfacial layer. In this system, the carrier concentration experiences a two-fold increase in sensitivity to changes in relative humidity as compared to the as-grown epitaxial graphene. This enhanced sensitivity to water is attributed to the lowering of the hydrophobicity of QFS 1LG, which results from spontaneous polarization of 4H-SiC(0001) strongly influencing the graphene. Moreover, the superior carrier mobility of the QFS 1LG system is retained even at the highest humidity. The work function maps constructed from Kelvin probe force microscopy also revealed higher sensitivity to water for 1LG compared to 2LG in both QFS 1LG and as-grown systems. These results point to a new field of applications for QFS 1LG, i.e., as humidity sensors, and the corresponding need for metrology in calibration of graphene-based sensors and devices.
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Submitted 26 April, 2018; v1 submitted 25 April, 2018;
originally announced April 2018.
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Surface and interface structure of quasi-free standing graphene on SiC
Authors:
Christos Melios,
Steve Spencer,
Alex Shard,
Wlodek Strupinski,
S. Ravi P. Silva,
Olga Kazakova
Abstract:
We perform local nanoscale studies of the surface and interface structure of hydrogen intercalated graphene on 4H-SiC(1000). In particular, we show that intercalation of the interfacial layer results in the formation of quasi-free standing one layer graphene (QFS 1LG) with change in the carrier type from n- to p-type, accompanied by a more than four times increase in carrier mobility. We demonstra…
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We perform local nanoscale studies of the surface and interface structure of hydrogen intercalated graphene on 4H-SiC(1000). In particular, we show that intercalation of the interfacial layer results in the formation of quasi-free standing one layer graphene (QFS 1LG) with change in the carrier type from n- to p-type, accompanied by a more than four times increase in carrier mobility. We demonstrate that surface enhanced Raman scattering (SERS) reveals the enhanced Raman signal of Si-H stretching mode, which is the direct proof of successful intercalation. Furthermore, the appearance of D, D+D' as well as C-H peaks for the quasi-free standing two layer graphene (QFS 2LG) suggests that hydrogen also penetrates in between the graphene layers to locally form C-H sp3 defects that decrease the mobility. Thus, SERS provides a quick and reliable technique to investigate the interface structure of graphene which is in general not accessible by other conventional methods. Our findings are further confirmed by Kelvin probe force microscopy and X-ray photoelectron spectroscopy.
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Submitted 26 April, 2018; v1 submitted 25 April, 2018;
originally announced April 2018.
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Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications
Authors:
Hanan Mohammed,
Hector Corte-León,
Yurii P. Ivanov,
Sergei Lopatin,
Julian A. Moreno,
Andrey Chuvilin,
Akshaykumar Salimath,
Aurelien Manchon,
Olga Kazakova,
Jurgen Kosel
Abstract:
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domai…
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A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.
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Submitted 18 April, 2018;
originally announced April 2018.
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Confocal laser scanning microscopy: A tool for rapid optical characterization of 2D materials
Authors:
Vishal Panchal,
Yanfei Yang,
Guangjun Cheng,
Jiuning Hu,
Mattias Kruskopf,
Chieh-I Liu,
Albert F. Rigosi,
Christos Melios,
Angela R. Hight Walker,
David B. Newell,
Olga Kazakova,
Randolph E. Elmquist
Abstract:
Confocal laser scanning microscopy (CLSM) is a non-destructive, highly-efficient optical characterization method for large-area analysis of graphene on different substrates, which can be applied in ambient air, does not require additional sample preparation, and is insusceptible to surface charging and surface contamination. CLSM leverages optical properties of graphene and provides greatly enhanc…
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Confocal laser scanning microscopy (CLSM) is a non-destructive, highly-efficient optical characterization method for large-area analysis of graphene on different substrates, which can be applied in ambient air, does not require additional sample preparation, and is insusceptible to surface charging and surface contamination. CLSM leverages optical properties of graphene and provides greatly enhanced optical contrast and mapping of thickness down to a single layer. We demonstrate the effectiveness of CLSM by measuring mechanically exfoliated and chemical vapor deposition graphene on Si/SiO2, and epitaxial graphene on SiC. In the case of graphene on Si/SiO2, both CLSM intensity and height mapping is powerful for analysis of 1-5 layers of graphene. For epitaxial graphene on SiC substrates, the CLSM intensity allows us to distinguish features such as dense, parallel 150 nm wide ribbons of graphene (associated with the early stages of the growth process) and large regions covered by the interfacial layer and 1-3 layers of graphene. In both cases, CLSM data shows excellent correlation with conventional optical microscopy, atomic force microscopy, Kelvin probe force microscopy, conductive atomic force microscopy, scanning electron microscopy and Raman mapping, with a greatly reduced acquisition time. We demonstrate that CLSM is an indispensable tool for rapid analysis of mass-produced graphene and is equally relevant to other 2D materials.
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Submitted 12 April, 2018;
originally announced April 2018.
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Magnetic Force Microscopy Imaging Using Geometrically Constrained Nano-Domain Walls
Authors:
Héctor Corte-León,
Luis Alfredo Rodríguez,
Matteo Pancaldi,
David Cox,
Etienne Snoeck,
Vladimir Antonov,
Paolo Vavassori,
Olga Kazakova
Abstract:
Domain wall probes (DW-probes) were custom-made by modifying standard commercial magnetic force microscopy (MFM) probes using focused ion beam lithography. Excess of magnetic coating from the probes was milled out, leaving a V-shaped nanostructure on one face of the probe apex. Owing to the nanostructure's shape anisotropy, such probe has four possible magnetic states depending on the direction of…
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Domain wall probes (DW-probes) were custom-made by modifying standard commercial magnetic force microscopy (MFM) probes using focused ion beam lithography. Excess of magnetic coating from the probes was milled out, leaving a V-shaped nanostructure on one face of the probe apex. Owing to the nanostructure's shape anisotropy, such probe has four possible magnetic states depending on the direction of the magnetization along each arm of the V-shape. Two states of opposite polarity are characterised by the presence of a geometrically constrained DW, pinned at the corner of the V-shape nanostructure. In the other two states, the magnetization curls around the corner with opposite chirality. Electron holography studies, supported by numerical simulations, demonstrate that a strong stray field emanates from the pinned DW, whilst a much weaker stray field is generated by the curling configurations. Using in situ MFM, we show that the magnetization states of the DW-probe can be easily controlled by applying an external magnetic field, thereby demonstrating that this type of probe can be used as a switchable tool with a low or high stray field intensity. We demonstrate that DW-probes enable acquiring magnetic images with a negligible interference with the sample magnetization, similar to that of commercial low moment probes, but with a higher magnetic contrast. In addition, the DW-probe in the curl state provides complementary information about the in-plane component of the sample's magnetization, which is not achievable by standard methods and provides additional information about the stray fields, e.g. as when imaging DWs.
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Submitted 12 April, 2018;
originally announced April 2018.
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Imaging bulk and edge transport near the Dirac point in graphene moiré superlattices
Authors:
Ziwei Dou,
Sei Morikawa,
Alessandro Cresti,
Shu-Wei Wang,
Charles G. Smith,
Christos Melios,
Olga Kazakova,
Kenji Watanabe,
Takashi Taniguchi,
Satoru Masubuchi,
Tomoki Machida,
Malcolm R. Connolly
Abstract:
Van der Waals structures formed by aligning monolayer graphene with insulating layers of hexagonal boron nitride exhibit a moiré superlattice that is expected to break sublattice symmetry. Despite an energy gap of several tens of millielectron volts opening in the Dirac spectrum, electrical resistivity remains lower than expected at low temperature and varies between devices. While subgap states a…
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Van der Waals structures formed by aligning monolayer graphene with insulating layers of hexagonal boron nitride exhibit a moiré superlattice that is expected to break sublattice symmetry. Despite an energy gap of several tens of millielectron volts opening in the Dirac spectrum, electrical resistivity remains lower than expected at low temperature and varies between devices. While subgap states are likely to play a role in this behavior, their precise nature is unclear. We present a scanning gate microscopy study of moiré superlattice devices with comparable activation energy but with different charge disorder levels. In the device with higher charge impurity (~${10}^{10}$ $cm^{-2}$) and lower resistivity (~$10$ $kΩ$) at the Dirac point we observe current flow along the graphene edges. Combined with simulations, our measurements suggest that enhanced edge doping is responsible for this effect. In addition, a device with low charge impurity (~$10^9$ $cm^{-2}$) and higher resistivity (~$100$ $kΩ$) shows subgap states in the bulk, consistent with the absence of shunting by edge currents.
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Submitted 21 November, 2017;
originally announced November 2017.
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Rapid characterization of wafer-scale 2D material: Epitaxial graphene and graphene nanoribbons on SiC
Authors:
Vishal Panchal,
Yanfei Yang,
Guangjun Cheng,
Jiuning Hu,
Chieh-I Liu,
Albert F. Rigosi,
Christos Melios,
Olga Kazakova,
Angela R. Hight Walker,
David B. Newell,
Randolph E. Elmquist
Abstract:
We demonstrate that the confocal laser scanning microscopy (CLSM) provides a non-destructive, highly-efficient characterization method for large-area epitaxial graphene and graphene nanostructures on SiC substrates, which can be applied in ambient air without sample preparation and is insusceptible to surface charging or surface contamination. Based on the variation of reflected intensity from reg…
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We demonstrate that the confocal laser scanning microscopy (CLSM) provides a non-destructive, highly-efficient characterization method for large-area epitaxial graphene and graphene nanostructures on SiC substrates, which can be applied in ambient air without sample preparation and is insusceptible to surface charging or surface contamination. Based on the variation of reflected intensity from regions covered by interfacial layer, single layer, bilayer, or few layer graphene, and through the correlation to the results from Raman spectroscopy and SPM, CLSM images with a high resolution (around 150 nm) reveal that the intensity contrast has distinct feature for undergrown graphene (mixing of dense, parallel graphene nanoribbons and interfacial layer), continuous graphene, and overgrown graphene. Moreover, CLSM has a real acquisition time hundreds of times faster per unit area than the supplementary characterization methods. We believe that the confocal laser scanning microscope will be an indispensable tool for mass-produced epitaxial graphene or applicable 2D materials.
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Submitted 9 November, 2017;
originally announced November 2017.
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Nano scale thermo-electrical detection of magnetic domain wall propagation
Authors:
Patryk Krzysteczko,
James Wells,
Alexander Fernandez Scarioni,
Zbynek Soban,
Tomas Janda,
Xiukun Hu,
Vit Saidl,
Richard P. Campion,
Rhodri Mansell,
Ji-Hyun Lee,
Russell P. Cowburn,
Petr Nemec,
Olga Kazakova,
Joerg Wunderlich,
Hans Werner Schumacher
Abstract:
In magnetic nanowires with perpendicular magnetic anisotropy (PMA) magnetic domain walls (DW) are narrow and can move rapidly driven by current induced torques. This enables important applications like high-density memories for which the precise detection of the position and motion of a propagating DW is of utmost interest. Today's DW detection tools are often limited in resolution, or acquisition…
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In magnetic nanowires with perpendicular magnetic anisotropy (PMA) magnetic domain walls (DW) are narrow and can move rapidly driven by current induced torques. This enables important applications like high-density memories for which the precise detection of the position and motion of a propagating DW is of utmost interest. Today's DW detection tools are often limited in resolution, or acquisition speed, or can only be applied on specific materials. Here, we show that the anomalous Nernst effect provides a simple and powerful tool to precisely track the position and motion of a single DW propagating in a PMA nanowire. We detect field and current driven DW propagation in both metallic heterostructures and dilute magnetic semiconductors over a broad temperature range. The demonstrated spatial resolution below 20 nm is comparable to the DW width in typical metallic PMA systems.
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Submitted 23 November, 2016;
originally announced November 2016.
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Standardization of surface potential measurements of graphene domains
Authors:
Vishal Panchal,
Ruth Pearce,
Rositza Yakimova,
Alexander Tzalenchuk,
Olga Kazakova
Abstract:
We compare the three most commonly used scanning probe techniques to obtain a reliable value of the work function in graphene domains of different thickness. The surface potential (SP) of graphene is directly measured in Hall bar geometry via a combination of electrical functional microscopy and spectroscopy techniques, which enables calibrated work function measurements of graphene domains with v…
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We compare the three most commonly used scanning probe techniques to obtain a reliable value of the work function in graphene domains of different thickness. The surface potential (SP) of graphene is directly measured in Hall bar geometry via a combination of electrical functional microscopy and spectroscopy techniques, which enables calibrated work function measurements of graphene domains with values ~4.55+/-0.02 eV and ~4.44+/-0.02eV for single- and bi-layer, respectively. We demonstrate that frequency-modulated Kelvin probe force microscopy (FM-KPFM) provides more accurate measurement of the SP than amplitude-modulated (AM)-KPFM. The discrepancy between experimental results obtained by different techniques is discussed. In addition, we use FM-KPFM for contactless measurements of the specific components of the device resistance. We show a strong non-Ohmic behavior of the electrode-graphene contact resistance and extract the graphene channel resistivity.
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Submitted 2 May, 2013;
originally announced May 2013.
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Water desorption and re-adsorption on epitaxial graphene studied by SPM
Authors:
Tim L. Burnett,
Jack Patten,
Olga Kazakova
Abstract:
We demonstrate the temperature-mediated and completely reversible process of desorption-readsorption of water on a few layers of epitaxial graphene on a 4H-SiC(0001) substrate. We show that under ambient conditions water forms solid structures on top of the second and third layers of graphene. In the case of strained or highly defective graphene domains, these features produce strongly correlated…
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We demonstrate the temperature-mediated and completely reversible process of desorption-readsorption of water on a few layers of epitaxial graphene on a 4H-SiC(0001) substrate. We show that under ambient conditions water forms solid structures on top of the second and third layers of graphene. In the case of strained or highly defective graphene domains, these features produce strongly correlated and reproducible patterns, implying importance of the underlying defects for the initial stages of water adsorption. Hydrophobicity increases with number of graphene layers. Evolution of the water layer as a function of temperature is accompanied by a significant (two-fold) change of the absolute surface potential difference between one and two layers of graphene. In situ observation of water evolution during heating also potentially provides a direct method for measurement of the heat adsorption on the nanoscale.
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Submitted 15 April, 2012;
originally announced April 2012.
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Quantum Resistance Standard Based on Epitaxial Graphene
Authors:
Alexander Tzalenchuk,
Samuel Lara-Avila,
Alexei Kalaboukhov,
Sara Paolillo,
Mikael Syväjärvi,
Rositza Yakimova,
Olga Kazakova,
T. J. B. M. Janssen,
Vladimir Fal'ko,
Sergey Kubatkin
Abstract:
We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resis…
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We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resistance standards the novel graphene device is still accurately quantized at 4.2 K, vastly simplifying practical metrology. This breakthrough was made possible by exceptional graphene quality achieved with scalable silicon carbide technology on a wafer scale and shows great promise for future large scale applications in electronics.
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Submitted 7 September, 2009;
originally announced September 2009.
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Influence of thermal coupling on spin avalanches in Mn12-acetate
Authors:
C. H. Webster,
O. Kazakova,
J. C. Gallop,
P. W. Josephs-Franks,
A. Hernandez-Minguez,
A. Ya. Tzalenchuk
Abstract:
The effect of thermal coupling on spin avalanches in Mn12-acetate has been probed using a single crystal assembly. Time-resolved, synchronized measurements of magnetization and temperature are reported. Unusually low avalanche trigger fields occur when thermal coupling to the bath is weak. A temperature rise observed at zero magnetic field is attributed to a change in magnetostatic energy.
The effect of thermal coupling on spin avalanches in Mn12-acetate has been probed using a single crystal assembly. Time-resolved, synchronized measurements of magnetization and temperature are reported. Unusually low avalanche trigger fields occur when thermal coupling to the bath is weak. A temperature rise observed at zero magnetic field is attributed to a change in magnetostatic energy.
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Submitted 10 July, 2007; v1 submitted 22 September, 2006;
originally announced September 2006.
