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Physics > Applied Physics

arXiv:1804.09630 (physics)
[Submitted on 25 Apr 2018]

Title:Visualisation of edge effects in side-gated graphene nanodevices

Authors:Vishal Panchal, Arseniy Lartsev, Alessandra Manzin, Rositza Yakimova, Alexander Tzalenchuk, Olga Kazakova
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Abstract:Using local scanning electrical techniques we study edge effects in side-gated Hall nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of ~60-125 nm width, whereas the bulk of the material is electron doped. The effect is the most pronounced when the influence of atmospheric contamination is minimal. We also show that the electronic properties at the edges can be precisely tuned from hole to electron conduction by using moderate strength electrical fields created by side-gates. However, the central part of the channel remains relatively unaffected by the side-gates and retains the bulk properties of graphene.
Comments: 4 Figures, 1 Table
Subjects: Applied Physics (physics.app-ph); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1804.09630 [physics.app-ph]
  (or arXiv:1804.09630v1 [physics.app-ph] for this version)
  https://doi.org/10.48550/arXiv.1804.09630
Journal reference: Scientific Reports. 4, 5881, 2014
Related DOI: https://doi.org/10.1038/srep05881

Submission history

From: Vishal Panchal [view email]
[v1] Wed, 25 Apr 2018 15:31:49 UTC (981 KB)
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