Showing 1–50 of 113 results for author: Itoh, K M

Scalable entanglement of nuclear spins mediated by electron exchange

Authors: Holly G. Stemp, Mark R. van Blankenstein, Serwan Asaad, Mateusz T. Mądzik, Benjamin Joecker, Hannes R. Firgau, Arne Laucht, Fay E. Hudson, Andrew S. Dzurak, Kohei M. Itoh, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Andrea Morello

Abstract: The use of nuclear spins for quantum computation is limited by the difficulty in creating genuine quantum entanglement between distant nuclei. Current demonstrations of nuclear entanglement in semiconductors rely upon coupling the nuclei to a common electron, which is not a scalable strategy. Here we demonstrate a two-qubit Control-Z logic operation between the nuclei of two phosphorus atoms in a… ▽ More The use of nuclear spins for quantum computation is limited by the difficulty in creating genuine quantum entanglement between distant nuclei. Current demonstrations of nuclear entanglement in semiconductors rely upon coupling the nuclei to a common electron, which is not a scalable strategy. Here we demonstrate a two-qubit Control-Z logic operation between the nuclei of two phosphorus atoms in a silicon device, separated by up to 20 nanometers. Each atoms binds separate electrons, whose exchange interaction mediates the nuclear two-qubit gate. We prove that the nuclei are entangled by preparing and measuring Bell states with a fidelity of 76 +/- 5 $\%$ and a concurrence of 0.67 +/- 0.05. With this method, future progress in scaling up semiconductor spin qubits can be extended to the development of nuclear-spin based quantum computers. △ Less

Submitted 9 March, 2025; originally announced March 2025.

Enhancement of Electric Drive in Silicon Quantum Dots with Electric Quadrupole Spin Resonance

Authors: Philip Y. Mai, Pedro H. Pereira, Lucas Andrade Alonso, Ross C. C. Leon, Chih Hwan Yang, Jason C. C. Hwang, Daniel Dunmore, Julien Camirand Lemyre, Tuomo Tanttu, Wister Huang, Kok Wai Chan, Kuan Yen Tan, Jesús D. Cifuentes, Fay E. Hudson, Kohei M. Itoh, Arne Laucht, Michel Pioro-Ladrière, Christopher C. Escott, MengKe Feng, Reinaldo de Melo e Souza, Andrew Dzurak, Andre Saraiva

Abstract: Quantum computation with electron spin qubits requires coherent and efficient manipulation of these spins, typically accomplished through the application of alternating magnetic or electric fields for electron spin resonance (ESR). In particular, electrical driving allows us to apply localized fields on the electrons, which benefits scale-up architectures. However, we have found that Electric Dipo… ▽ More Quantum computation with electron spin qubits requires coherent and efficient manipulation of these spins, typically accomplished through the application of alternating magnetic or electric fields for electron spin resonance (ESR). In particular, electrical driving allows us to apply localized fields on the electrons, which benefits scale-up architectures. However, we have found that Electric Dipole Spin Resonance (EDSR) is insufficient for modeling the Rabi behavior in recent experimental studies. Therefore, we propose that the electron spin is being driven by a new method of electric spin qubit control which generalizes the spin dynamics by taking into account a quadrupolar contribution of the quantum dot: electric quadrupole spin resonance (EQSR). In this work, we explore the electric quadrupole driving of a quantum dot in silicon, specifically examining the cases of 5 and 13 electron occupancies. △ Less

Submitted 3 February, 2025; v1 submitted 2 February, 2025; originally announced February 2025.

Comments: Main: 5 pages, 4 figures Supp: 4 pages

Certifying the quantumness of a nuclear spin qudit through its uniform precession

Authors: Arjen Vaartjes, Martin Nurizzo, Lin Htoo Zaw, Benjamin Wilhelm, Xi Yu, Danielle Holmes, Daniel Schwienbacher, Anders Kringhøj, Mark R. van Blankenstein, Alexander M. Jakob, Fay E. Hudson, Kohei M. Itoh, Riley J. Murray, Robin Blume-Kohout, Namit Anand, Andrew S. Dzurak, David N. Jamieson, Valerio Scarani, Andrea Morello

Abstract: Spin precession is a textbook example of dynamics of a quantum system that exactly mimics its classical counterpart. Here we challenge this view by certifying the quantumness of exotic states of a nuclear spin through its uniform precession. The key to this result is measuring the positivity, instead of the expectation value, of the $x$-projection of the precessing spin, and using a spin > 1/2 qud… ▽ More Spin precession is a textbook example of dynamics of a quantum system that exactly mimics its classical counterpart. Here we challenge this view by certifying the quantumness of exotic states of a nuclear spin through its uniform precession. The key to this result is measuring the positivity, instead of the expectation value, of the $x$-projection of the precessing spin, and using a spin > 1/2 qudit, that is not restricted to semi-classical spin coherent states. The experiment is performed on a single spin-7/2 $^{123}$Sb nucleus, implanted in a silicon nanoelectronic device, amenable to high-fidelity preparation, control, and projective single-shot readout. Using Schrödinger cat states and other bespoke states of the nucleus, we violate the classical bound by 19 standard deviations, proving that no classical probability distribution can explain the statistic of this spin precession, and highlighting our ability to prepare quantum resource states with high fidelity in a single atomic-scale qudit. △ Less

Submitted 10 October, 2024; v1 submitted 10 October, 2024; originally announced October 2024.

Comments: Main text: 11 pages, 5 figures. Supplementary information: 13 pages, 11 figures

Violating Bell's inequality in gate-defined quantum dots

Authors: Paul Steinacker, Tuomo Tanttu, Wee Han Lim, Nard Dumoulin Stuyck, MengKe Feng, Santiago Serrano, Ensar Vahapoglu, Rocky Y. Su, Jonathan Y. Huang, Cameron Jones, Kohei M. Itoh, Fay E. Hudson, Christopher C. Escott, Andrea Morello, Andre Saraiva, Chih Hwan Yang, Andrew S. Dzurak, Arne Laucht

Abstract: Superior computational power promised by quantum computers utilises the fundamental quantum mechanical principle of entanglement. However, achieving entanglement and verifying that the generated state does not follow the principle of local causality has proven difficult for spin qubits in gate-defined quantum dots, as it requires simultaneously high concurrence values and readout fidelities to bre… ▽ More Superior computational power promised by quantum computers utilises the fundamental quantum mechanical principle of entanglement. However, achieving entanglement and verifying that the generated state does not follow the principle of local causality has proven difficult for spin qubits in gate-defined quantum dots, as it requires simultaneously high concurrence values and readout fidelities to break the classical bound imposed by Bell's inequality. Here we employ heralded initialization and calibration via gate set tomography (GST), to reduce all relevant errors and push the fidelities of the full 2-qubit gate set above 99 %, including state preparation and measurement (SPAM). We demonstrate a 97.17 % Bell state fidelity without correcting for readout errors and violate Bell's inequality with a Bell signal of S = 2.731 close to the theoretical maximum of $2\sqrt{2}$. Our measurements exceed the classical limit even at elevated temperatures of 1.1 K or entanglement lifetimes of 100 $μs$. △ Less

Submitted 16 August, 2024; v1 submitted 22 July, 2024; originally announced July 2024.

Comments: 19 pages, 5 main figures, 9 extended data figures

MSC Class: 81P68; 81-05

Spin Qubits with Scalable milli-kelvin CMOS Control

Authors: Samuel K. Bartee, Will Gilbert, Kun Zuo, Kushal Das, Tuomo Tanttu, Chih Hwan Yang, Nard Dumoulin Stuyck, Sebastian J. Pauka, Rocky Y. Su, Wee Han Lim, Santiago Serrano, Christopher C. Escott, Fay E. Hudson, Kohei M. Itoh, Arne Laucht, Andrew S. Dzurak, David J. Reilly

Abstract: A key virtue of spin qubits is their sub-micron footprint, enabling a single silicon chip to host the millions of qubits required to execute useful quantum algorithms with error correction. With each physical qubit needing multiple control lines however, a fundamental barrier to scale is the extreme density of connections that bridge quantum devices to their external control and readout hardware.… ▽ More A key virtue of spin qubits is their sub-micron footprint, enabling a single silicon chip to host the millions of qubits required to execute useful quantum algorithms with error correction. With each physical qubit needing multiple control lines however, a fundamental barrier to scale is the extreme density of connections that bridge quantum devices to their external control and readout hardware. A promising solution is to co-locate the control system proximal to the qubit platform at milli-kelvin temperatures, wired-up via miniaturized interconnects. Even so, heat and crosstalk from closely integrated control have potential to degrade qubit performance, particularly for two-qubit entangling gates based on exchange coupling that are sensitive to electrical noise. Here, we benchmark silicon MOS-style electron spin qubits controlled via heterogeneously-integrated cryo-CMOS circuits with a low enough power density to enable scale-up. Demonstrating that cryo-CMOS can efficiently enable universal logic operations for spin qubits, we go on to show that mill-kelvin control has little impact on the performance of single- and two-qubit gates. Given the complexity of our milli-kelvin CMOS platform, with some 100-thousand transistors, these results open the prospect of scalable control based on the tight packaging of spin qubits with a chiplet style control architecture. △ Less

Submitted 21 July, 2024; originally announced July 2024.

Schrödinger cat states of a nuclear spin qudit in silicon

Authors: Xi Yu, Benjamin Wilhelm, Danielle Holmes, Arjen Vaartjes, Daniel Schwienbacher, Martin Nurizzo, Anders Kringhøj, Mark R. van Blankenstein, Alexander M. Jakob, Pragati Gupta, Fay E. Hudson, Kohei M. Itoh, Riley J. Murray, Robin Blume-Kohout, Thaddeus D. Ladd, Namit Anand, Andrew S. Dzurak, Barry C. Sanders, David N. Jamieson, Andrea Morello

Abstract: High-dimensional quantum systems are a valuable resource for quantum information processing. They can be used to encode error-correctable logical qubits, which has been demonstrated using continuous-variable states in microwave cavities or the motional modes of trapped ions. For example, high-dimensional systems can be used to realise `Schrödinger cat' states, superpositions of widely displaced co… ▽ More High-dimensional quantum systems are a valuable resource for quantum information processing. They can be used to encode error-correctable logical qubits, which has been demonstrated using continuous-variable states in microwave cavities or the motional modes of trapped ions. For example, high-dimensional systems can be used to realise `Schrödinger cat' states, superpositions of widely displaced coherent states that can also be used to illustrate quantum effects at large scales. Recent proposals have suggested encoding qubits in high-spin atomic nuclei, finite-dimensional systems that can host hardware-efficient versions of continuous-variable codes. Here we demonstrate the creation and manipulation of Schrodinger cat states using the spin-7/2 nucleus of an antimony atom embedded in a silicon nanoelectronic device. We use a multi-frequency control scheme to produce spin rotations that preserve the symmetry of the qudit, and constitute logical Pauli operations for qubits encoded in the Schrodinger cat states. Our work demonstrates the ability to prepare and control nonclassical resource states, a prerequisite for applications in quantum information processing and quantum error correction using our scalable, manufacturable semiconductor platform. △ Less

Submitted 13 January, 2025; v1 submitted 24 May, 2024; originally announced May 2024.

Comments: 40 pages including main and supplementary information

Journal ref: Nature Physics (2025)

Entangling gates on degenerate spin qubits dressed by a global field

Authors: Ingvild Hansen, Amanda E. Seedhouse, Santiago Serrano, Andreas Nickl, MengKe Feng, Jonathan Y. Huang, Tuomo Tanttu, Nard Dumoulin Stuyck, Wee Han Lim, Fay E. Hudson, Kohei M. Itoh, Andre Saraiva, Arne Laucht, Andrew S. Dzurak, Chih Hwan Yang

Abstract: Coherently dressed spins have shown promising results as building blocks for future quantum computers owing to their resilience to environmental noise and their compatibility with global control fields. This mode of operation allows for more amenable qubit architecture requirements and simplifies signal routing on the chip. However, multi-qubit operations, such as qubit addressability and two-qubi… ▽ More Coherently dressed spins have shown promising results as building blocks for future quantum computers owing to their resilience to environmental noise and their compatibility with global control fields. This mode of operation allows for more amenable qubit architecture requirements and simplifies signal routing on the chip. However, multi-qubit operations, such as qubit addressability and two-qubit gates, are yet to be demonstrated to establish global control in combination with dressed qubits as a viable path to universal quantum computing. Here we demonstrate simultaneous on-resonance driving of degenerate qubits using a global field while retaining addressability for qubits with equal Larmor frequencies. Furthermore, we implement SWAP oscillations during on-resonance driving, constituting the demonstration of driven two-qubit gates. Significantly, our findings highlight the fragility of entangling gates between superposition states and how dressing can increase the noise robustness. These results represent a crucial milestone towards global control operation with dressed qubits. It also opens a door to interesting spin physics on degenerate spins. △ Less

Submitted 30 November, 2023; v1 submitted 16 November, 2023; originally announced November 2023.

Journal ref: Nature Communications 15, 7656 (2024)

Coherence of a field-gradient-driven singlet-triplet qubit coupled to many-electron spin states in 28Si/SiGe

Authors: Younguk Song, Jonginn Yun, Jehyun Kim, Wonjin Jang, Hyeongyu Jang, Jaemin Park, Min-Kyun Cho, Hanseo Sohn, Noritaka Usami, Satoru Miyamoto, Kohei M. Itoh, Dohun Kim

Abstract: Engineered spin-electric coupling enables spin qubits in semiconductor nanostructures to be manipulated efficiently and addressed individually. While synthetic spin-orbit coupling using a micromagnet is widely used for driving qubits based on single spins in silicon, corresponding demonstration for encoded spin qubits is so far limited to natural silicon. Here, we demonstrate fast singlet-triplet… ▽ More Engineered spin-electric coupling enables spin qubits in semiconductor nanostructures to be manipulated efficiently and addressed individually. While synthetic spin-orbit coupling using a micromagnet is widely used for driving qubits based on single spins in silicon, corresponding demonstration for encoded spin qubits is so far limited to natural silicon. Here, we demonstrate fast singlet-triplet qubit oscillation (~100 MHz) in a gate-defined double quantum dot in $^{28}$Si/SiGe with an on-chip micromagnet with which we show the oscillation quality factor of an encoded spin qubit exceeding 580. The coherence time $\textit{T}_{2}$* is analyzed as a function of potential detuning and an external magnetic field. In weak magnetic fields, the coherence is limited by fast noise compared to the data acquisition time, which limits $\textit{T}_{2}$* < 1 $μ$s in the ergodic limit. We present evidence of sizable and coherent coupling of the qubit with the spin states of a nearby quantum dot, demonstrating that appropriate spin-electric coupling may enable a charge-based two-qubit gate in a (1,1) charge configuration. △ Less

Submitted 25 October, 2023; v1 submitted 19 October, 2023; originally announced October 2023.

Journal ref: npj Quantum Inf. 10, 77 (2024)

Tomography of entangling two-qubit logic operations in exchange-coupled donor electron spin qubits

Authors: Holly G. Stemp, Serwan Asaad, Mark R. van Blankenstein, Arjen Vaartjes, Mark A. I. Johnson, Mateusz T. Mądzik, Amber J. A. Heskes, Hannes R. Firgau, Rocky Y. Su, Chih Hwan Yang, Arne Laucht, Corey I. Ostrove, Kenneth M. Rudinger, Kevin Young, Robin Blume-Kohout, Fay E. Hudson, Andrew S. Dzurak, Kohei M. Itoh, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Andrea Morello

Abstract: Scalable quantum processors require high-fidelity universal quantum logic operations in a manufacturable physical platform. Donors in silicon provide atomic size, excellent quantum coherence and compatibility with standard semiconductor processing, but no entanglement between donor-bound electron spins has been demonstrated to date. Here we present the experimental demonstration and tomography of… ▽ More Scalable quantum processors require high-fidelity universal quantum logic operations in a manufacturable physical platform. Donors in silicon provide atomic size, excellent quantum coherence and compatibility with standard semiconductor processing, but no entanglement between donor-bound electron spins has been demonstrated to date. Here we present the experimental demonstration and tomography of universal 1- and 2-qubit gates in a system of two weakly exchange-coupled electrons, bound to single phosphorus donors introduced in silicon by ion implantation. We surprisingly observe that the exchange interaction has no effect on the qubit coherence. We quantify the fidelity of the quantum operations using gate set tomography (GST), and we use the universal gate set to create entangled Bell states of the electrons spins, with fidelity ~ 93%, and concurrence 0.91 +/- 0.08. These results form the necessary basis for scaling up donor-based quantum computers. △ Less

Submitted 2 March, 2024; v1 submitted 27 September, 2023; originally announced September 2023.

Wavelet correlation noise analysis for qubit operation variable time series

Authors: Amanda E. Seedhouse, Nard Dumoulin Stuyck, Santiago Serrano, Tuomo Tanttu, Will Gilbert, Jonathan Yue Huang, Fay E. Hudson, Kohei M. Itoh, Arne Laucht, Wee Han Lim, Chih Hwan Yang, Andrew S. Dzurak, Andre Saraiva

Abstract: In quantum computing, characterizing the full noise profile of qubits can aid in increasing coherence times and fidelities by developing error-mitigating techniques specific to the noise present. This characterization also supports efforts in advancing device fabrication to remove sources of noise. Qubit properties can be subject to non-trivial correlations in space and time, for example, spin qub… ▽ More In quantum computing, characterizing the full noise profile of qubits can aid in increasing coherence times and fidelities by developing error-mitigating techniques specific to the noise present. This characterization also supports efforts in advancing device fabrication to remove sources of noise. Qubit properties can be subject to non-trivial correlations in space and time, for example, spin qubits in MOS quantum dots are exposed to noise originating from the complex glassy behavior of two-level fluctuator ensembles. Engineering progress in spin qubit experiments generates large amounts of data, necessitating analysis techniques from fields experienced in managing large data sets. Fields such as astrophysics, finance, and climate science use wavelet-based methods to enhance their data analysis. Here, we propose and demonstrate wavelet-based analysis techniques to decompose signals into frequency and time components, enhancing our understanding of noise sources in qubit systems by identifying features at specific times. We apply the analysis to a state-of-the-art two-qubit experiment in a pair of SiMOS quantum dots with feedback applied to relevant operation variables. The observed correlations serve to identify common microscopic causes of noise, such as two-level fluctuators and hyperfine coupled nuclei, as well as to elucidate pathways for multi-qubit operation with more scalable feedback systems. △ Less

Submitted 1 April, 2025; v1 submitted 21 September, 2023; originally announced September 2023.

Comments: latest version

Journal ref: Scientific Reports volume 15, Article number: 11065 (2025)

Real-time feedback protocols for optimizing fault-tolerant two-qubit gate fidelities in a silicon spin system

Authors: Nard Dumoulin Stuyck, Amanda E. Seedhouse, Santiago Serrano, Tuomo Tanttu, Will Gilbert, Jonathan Yue Huang, Fay Hudson, Kohei M. Itoh, Arne Laucht, Wee Han Lim, Chih Hwan Yang, Andre Saraiva, Andrew S. Dzurak

Abstract: Recently, several groups have demonstrated two-qubit gate fidelities in semiconductor spin qubit systems above 99%. Achieving this regime of fault-tolerant compatible high fidelities is nontrivial and requires exquisite stability and precise control over the different qubit parameters over an extended period of time. This can be done by efficiently calibrating qubit control parameters against diff… ▽ More Recently, several groups have demonstrated two-qubit gate fidelities in semiconductor spin qubit systems above 99%. Achieving this regime of fault-tolerant compatible high fidelities is nontrivial and requires exquisite stability and precise control over the different qubit parameters over an extended period of time. This can be done by efficiently calibrating qubit control parameters against different sources of micro- and macroscopic noise. Here, we present several single- and two-qubit parameter feedback protocols, optimised for and implemented in state-of-the-art fast FPGA hardware. Furthermore, we use wavelet-based analysis on the collected feedback data to gain insight into the different sources of noise in the system. Scalable feedback is an outstanding challenge and the presented implementation and analysis gives insight into the benefits and drawbacks of qubit parameter feedback, as feedback related overhead increases. This work demonstrates a pathway towards robust qubit parameter feedback and systematic noise analysis, crucial for mitigation strategies towards systematic high-fidelity qubit operation compatible with quantum error correction protocols. △ Less

Submitted 21 September, 2023; originally announced September 2023.

Journal ref: Appl. Phys. Lett. 124, 114003 (2024)

Methods for transverse and longitudinal spin-photon coupling in silicon quantum dots with intrinsic spin-orbit effect

Authors: Kevin S. Guo, MengKe Feng, Jonathan Y. Huang, Will Gilbert, Kohei M. Itoh, Fay E. Hudson, Kok Wai Chan, Wee Han Lim, Andrew S. Dzurak, Andre Saraiva

Abstract: In a full-scale quantum computer with a fault-tolerant architecture, having scalable, long-range interaction between qubits is expected to be a highly valuable resource. One promising method of achieving this is through the light-matter interaction between spins in semiconductors and photons in superconducting cavities. This paper examines the theory of both transverse and longitudinal spin-photon… ▽ More In a full-scale quantum computer with a fault-tolerant architecture, having scalable, long-range interaction between qubits is expected to be a highly valuable resource. One promising method of achieving this is through the light-matter interaction between spins in semiconductors and photons in superconducting cavities. This paper examines the theory of both transverse and longitudinal spin-photon coupling and their applications in the silicon metal-oxide-semiconductor (SiMOS) platform. We propose a method of coupling which uses the intrinsic spin-orbit interaction arising from orbital degeneracies in SiMOS qubits. Using theoretical analysis and experimental data, we show that the strong coupling regime is achievable in the transverse scheme. We also evaluate the feasibility of a longitudinal coupling driven by an AC modulation on the qubit. These coupling methods eschew the requirement for an external micromagnet, enhancing prospects for scalability and integration into a large-scale quantum computer. △ Less

Submitted 24 August, 2023; originally announced August 2023.

Improved placement precision of implanted donor spin qubits in silicon using molecule ions

Authors: Danielle Holmes, Benjamin Wilhelm, Alexander M. Jakob, Xi Yu, Fay E. Hudson, Kohei M. Itoh, Andrew S. Dzurak, David N. Jamieson, Andrea Morello

Abstract: Donor spins in silicon-28 ($^{28}$Si) are among the most performant qubits in the solid state, offering record coherence times and gate fidelities above 99%. Donor spin qubits can be fabricated using the semiconductor-industry compatible method of deterministic ion implantation. Here we show that the precision of this fabrication method can be boosted by implanting molecule ions instead of single… ▽ More Donor spins in silicon-28 ($^{28}$Si) are among the most performant qubits in the solid state, offering record coherence times and gate fidelities above 99%. Donor spin qubits can be fabricated using the semiconductor-industry compatible method of deterministic ion implantation. Here we show that the precision of this fabrication method can be boosted by implanting molecule ions instead of single atoms. The bystander ions, co-implanted with the dopant of interest, carry additional kinetic energy and thus increase the detection confidence of deterministic donor implantation employing single ion detectors to signal the induced electron-hole pairs. This allows the placement uncertainty of donor qubits to be minimised without compromising on detection confidence. We investigate the suitability of phosphorus difluoride (PF$_2^+$) molecule ions to produce high quality P donor qubits. Since $^{19}$F nuclei have a spin of $I = 1/2$, it is imperative to ensure that they do not hyperfine couple to P donor electrons as they would cause decoherence by adding magnetic noise. Using secondary ion mass spectrometry, we confirm that F diffuses away from the active region of qubit devices while the P donors remain close to their original location during a donor activation anneal. PF$_2$-implanted qubit devices were then fabricated and electron spin resonance (ESR) measurements were performed on the P donor electron. A pure dephasing time of $T_2^* = 20.5 \pm 0.5$ $μ$s and a coherence time of $T_2^{Hahn} = 424 \pm 5$ $μ$s were extracted for the P donor electron-values comparable to those found in previous P-implanted qubit devices. Closer investigation of the P donor ESR spectrum revealed that no $^{19}$F nuclear spins were found in the vicinity of the P donor. Molecule ions therefore show great promise for producing high-precision deterministically-implanted arrays of long-lived donor spin qubits. △ Less

Submitted 8 August, 2023; originally announced August 2023.

Comments: 8 pages, 5 figures, 1 table

Characterizing non-Markovian Quantum Process by Fast Bayesian Tomography

Authors: R. Y. Su, J. Y. Huang, N. Dumoulin. Stuyck, M. K. Feng, W. Gilbert, T. J. Evans, W. H. Lim, F. E. Hudson, K. W. Chan, W. Huang, Kohei M. Itoh, R. Harper, S. D. Bartlett, C. H. Yang, A. Laucht, A. Saraiva, T. Tanttu, A. S. Dzurak

Abstract: To push gate performance to levels beyond the thresholds for quantum error correction, it is important to characterize the error sources occurring on quantum gates. However, the characterization of non-Markovian error poses a challenge to current quantum process tomography techniques. Fast Bayesian Tomography (FBT) is a self-consistent gate set tomography protocol that can be bootstrapped from ear… ▽ More To push gate performance to levels beyond the thresholds for quantum error correction, it is important to characterize the error sources occurring on quantum gates. However, the characterization of non-Markovian error poses a challenge to current quantum process tomography techniques. Fast Bayesian Tomography (FBT) is a self-consistent gate set tomography protocol that can be bootstrapped from earlier characterization knowledge and be updated in real-time with arbitrary gate sequences. Here we demonstrate how FBT allows for the characterization of key non-Markovian error processes. We introduce two experimental protocols for FBT to diagnose the non-Markovian behavior of two-qubit systems on silicon quantum dots. To increase the efficiency and scalability of the experiment-analysis loop, we develop an online FBT software stack. To reduce experiment cost and analysis time, we also introduce a native readout method and warm boot strategy. Our results demonstrate that FBT is a useful tool for probing non-Markovian errors that can be detrimental to the ultimate realization of fault-tolerant operation on quantum computing. △ Less

Submitted 4 October, 2023; v1 submitted 23 July, 2023; originally announced July 2023.

Navigating the 16-dimensional Hilbert space of a high-spin donor qudit with electric and magnetic fields

Authors: Irene Fernández de Fuentes, Tim Botzem, Mark A. I. Johnson, Arjen Vaartjes, Serwan Asaad, Vincent Mourik, Fay E. Hudson, Kohei M. Itoh, Brett C. Johnson, Alexander M. Jakob, Jeffrey C. McCallum, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: Efficient scaling and flexible control are key aspects of useful quantum computing hardware. Spins in semiconductors combine quantum information processing with electrons, holes or nuclei, control with electric or magnetic fields, and scalable coupling via exchange or dipole interaction. However, accessing large Hilbert space dimensions has remained challenging, due to the short-distance nature of… ▽ More Efficient scaling and flexible control are key aspects of useful quantum computing hardware. Spins in semiconductors combine quantum information processing with electrons, holes or nuclei, control with electric or magnetic fields, and scalable coupling via exchange or dipole interaction. However, accessing large Hilbert space dimensions has remained challenging, due to the short-distance nature of the interactions. Here, we present an atom-based semiconductor platform where a 16-dimensional Hilbert space is built by the combined electron-nuclear states of a single antimony donor in silicon. We demonstrate the ability to navigate this large Hilbert space using both electric and magnetic fields, with gate fidelity exceeding 99.8% on the nuclear spin, and unveil fine details of the system Hamiltonian and its susceptibility to control and noise fields. These results establish high-spin donors as a rich platform for practical quantum information and to explore quantum foundations. △ Less

Submitted 14 June, 2023; v1 submitted 12 June, 2023; originally announced June 2023.

Comments: 31 pages and 19 figures including Supplementary Materials

Journal ref: Nat Commun 15, 1380 (2024)

Assessment of error variation in high-fidelity two-qubit gates in silicon

Authors: Tuomo Tanttu, Wee Han Lim, Jonathan Y. Huang, Nard Dumoulin Stuyck, Will Gilbert, Rocky Y. Su, MengKe Feng, Jesus D. Cifuentes, Amanda E. Seedhouse, Stefan K. Seritan, Corey I. Ostrove, Kenneth M. Rudinger, Ross C. C. Leon, Wister Huang, Christopher C. Escott, Kohei M. Itoh, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Robin Blume-Kohout, Stephen D. Bartlett, Andrea Morello, Arne Laucht, Chih Hwan Yang , et al. (2 additional authors not shown)

Abstract: Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed to errors due to materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit pro… ▽ More Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed to errors due to materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit processor, tying them to their physical origins. We leverage this knowledge to demonstrate consistent and repeatable operation with above 99% fidelity of two-qubit gates in the technologically important silicon metal-oxide-semiconductor (SiMOS) quantum dot platform. We undertake a detailed study of these operations by analysing the physical errors and fidelities in multiple devices through numerous trials and extended periods to ensure that we capture the variation and the most common error types. Physical error sources include the slow nuclear and electrical noise on single qubits and contextual noise. The identification of the noise sources can be used to maintain performance within tolerance as well as inform future device fabrication. Furthermore, we investigate the impact of qubit design, feedback systems, and robust gates on implementing scalable, high-fidelity control strategies. These results are achieved by using three different characterization methods, we measure entangling gate fidelities ranging from 96.8% to 99.8%. Our analysis tools identify the causes of qubit degradation and offer ways understand their physical mechanisms. These results highlight both the capabilities and challenges for the scaling up of silicon spin-based qubits into full-scale quantum processors. △ Less

Submitted 15 March, 2024; v1 submitted 7 March, 2023; originally announced March 2023.

Journal ref: Nat. Phys. 6 (2024)

Control of dephasing in spin qubits during coherent transport in silicon

Authors: MengKe Feng, Jun Yoneda, Wister Huang, Yue Su, Tuomo Tanttu, Chih Hwan Yang, Jesus D. Cifuentes, Kok Wai Chan, William Gilbert, Ross C. C. Leon, Fay E. Hudson, Kohei M. Itoh, Arne Laucht, Andrew S. Dzurak, Andre Saraiva

Abstract: One of the key pathways towards scalability of spin-based quantum computing systems lies in achieving long-range interactions between electrons and increasing their inter-connectivity. Coherent spin transport is one of the most promising strategies to achieve this architectural advantage. Experimental results have previously demonstrated high fidelity transportation of spin qubits between two quan… ▽ More One of the key pathways towards scalability of spin-based quantum computing systems lies in achieving long-range interactions between electrons and increasing their inter-connectivity. Coherent spin transport is one of the most promising strategies to achieve this architectural advantage. Experimental results have previously demonstrated high fidelity transportation of spin qubits between two quantum dots in silicon and identified possible sources of error. In this theoretical study, we investigate these errors and analyze the impact of tunnel coupling, magnetic field and spin-orbit effects on the spin transfer process. The interplay between these effects gives rise to double dot configurations that include regimes of enhanced decoherence that should be avoided for quantum information processing. These conclusions permit us to extrapolate previous experimental conclusions and rationalize the future design of large scale quantum processors. △ Less

Submitted 20 February, 2023; v1 submitted 24 July, 2022; originally announced July 2022.

Comments: 18 pages, 9 figures

Floquet engineering using pulse driving in a diamond two-level system under a large-amplitude modulation

Authors: Shunsuke Nishimura, Kohei M. Itoh, Junko Ishi-Hayase, Kento Sasaki, Kensuke Kobayashi

Abstract: The nitrogen-vacancy (NV) center in a diamond is a promising platform for Floquet engineering. Using the synchronized readout, we investigate the NV center's Floquet state driven by the Carr-Purcell sequence in a large-amplitude AC magnetic field. We observe the dynamics represented as Bessel functions up to 211th orders high in a systematic and quantitative agreement with the theoretical model. F… ▽ More The nitrogen-vacancy (NV) center in a diamond is a promising platform for Floquet engineering. Using the synchronized readout, we investigate the NV center's Floquet state driven by the Carr-Purcell sequence in a large-amplitude AC magnetic field. We observe the dynamics represented as Bessel functions up to 211th orders high in a systematic and quantitative agreement with the theoretical model. Furthermore, numerical calculations show that the effect of finite pulse duration and error limits the modulation amplitude available for Floquet engineering. This work provides an approach to precisely investigate Floquet engineering, showing the extendable range of modulation amplitude for two-level systems. △ Less

Submitted 15 May, 2025; v1 submitted 26 April, 2022; originally announced April 2022.

Comments: 12pages, 8 figures

An electrically-driven single-atom `flip-flop' qubit

Authors: Rostyslav Savytskyy, Tim Botzem, Irene Fernandez de Fuentes, Benjamin Joecker, Jarryd J. Pla, Fay E. Hudson, Kohei M. Itoh, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: The spins of atoms and atom-like systems are among the most coherent objects in which to store quantum information. However, the need to address them using oscillating magnetic fields hinders their integration with quantum electronic devices. Here we circumvent this hurdle by operating a single-atom `flip-flop' qubit in silicon, where quantum information is encoded in the electron-nuclear states o… ▽ More The spins of atoms and atom-like systems are among the most coherent objects in which to store quantum information. However, the need to address them using oscillating magnetic fields hinders their integration with quantum electronic devices. Here we circumvent this hurdle by operating a single-atom `flip-flop' qubit in silicon, where quantum information is encoded in the electron-nuclear states of a phosphorus donor. The qubit is controlled using local electric fields at microwave frequencies, produced within a metal-oxide-semiconductor device. The electrical drive is mediated by the modulation of the electron-nuclear hyperfine coupling, a method that can be extended to many other atomic and molecular systems. These results pave the way to the construction of solid-state quantum processors where dense arrays of atoms can be controlled using only local electric fields. △ Less

Submitted 2 January, 2023; v1 submitted 9 February, 2022; originally announced February 2022.

Comments: 26 pages, 17 figures. v3 includes Supplementary Materials

On-demand electrical control of spin qubits

Authors: Will Gilbert, Tuomo Tanttu, Wee Han Lim, MengKe Feng, Jonathan Y. Huang, Jesus D. Cifuentes, Santiago Serrano, Philip Y. Mai, Ross C. C. Leon, Christopher C. Escott, Kohei M. Itoh, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Andrea Morello, Arne Laucht, Chih Hwan Yang, Andre Saraiva, Andrew S. Dzurak

Abstract: Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnet… ▽ More Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnets to artificially enhance the coupling between spins and electric field, which in turn hampers the spin's noise immunity and adds architectural complexity. Here we demonstrate a technique that enables a \emph{switchable} interaction between spins and orbital motion of electrons in silicon quantum dots, without the presence of a micromagnet. The naturally weak effects of the relativistic spin-orbit interaction in silicon are enhanced by more than three orders of magnitude by controlling the energy quantisation of electrons in the nanostructure, enhancing the orbital motion. Fast electrical control is demonstrated in multiple devices and electronic configurations, highlighting the utility of the technique. Using the electrical drive we achieve coherence time $T_{2,{\rm Hahn}}\approx50 μ$s, fast single-qubit gates with ${T_{π/2}=3}$ ns and gate fidelities of 99.93 % probed by randomised benchmarking. The higher gate speeds and better compatibility with CMOS manufacturing enabled by on-demand electric control improve the prospects for realising scalable silicon quantum processors. △ Less

Submitted 18 March, 2022; v1 submitted 17 January, 2022; originally announced January 2022.

Journal ref: Nature Nanotechnology (2023)

Beating the thermal limit of qubit initialization with a Bayesian Maxwell's demon

Authors: Mark A. I. Johnson, Mateusz T. Mądzik, Fay E. Hudson, Kohei M. Itoh, Alexander M. Jakob, David N. Jamieson, Andrew Dzurak, Andrea Morello

Abstract: Fault-tolerant quantum computing requires initializing the quantum register in a well-defined fiducial state. In solid-state systems, this is typically achieved through thermalization to a cold reservoir, such that the initialization fidelity is fundamentally limited by temperature. Here, we present a method of preparing a fiducial quantum state with a confidence beyond the thermal limit. It is ba… ▽ More Fault-tolerant quantum computing requires initializing the quantum register in a well-defined fiducial state. In solid-state systems, this is typically achieved through thermalization to a cold reservoir, such that the initialization fidelity is fundamentally limited by temperature. Here, we present a method of preparing a fiducial quantum state with a confidence beyond the thermal limit. It is based on real time monitoring of the qubit through a negative-result measurement -- the equivalent of a `Maxwell's demon' that triggers the experiment only upon the appearance of a qubit in the lowest-energy state. We experimentally apply it to initialize an electron spin qubit in silicon, achieving a ground-state initialization fidelity of 98.9(4)%, corresponding to a 20$\times$ reduction in initialization error compared to the unmonitored system. A fidelity approaching 99.9% could be achieved with realistic improvements in the bandwidth of the amplifier chain or by slowing down the rate of electron tunneling from the reservoir. We use a nuclear spin ancilla, measured in quantum nondemolition mode, to prove the value of the electron initialization fidelity far beyond the intrinsic fidelity of the electron readout. However, the method itself does not require an ancilla for its execution, saving the need for additional resources. The quantitative analysis of the initialization fidelity reveals that a simple picture of spin-dependent electron tunneling does not correctly describe the data. Our digital `Maxwell's demon' can be applied to a wide range of quantum systems, with minimal demands on control and detection hardware. △ Less

Submitted 1 November, 2022; v1 submitted 5 October, 2021; originally announced October 2021.

Comments: 15 pages, 7 figures

Journal ref: Physical Review X 12, (2022)

Implementation of the SMART protocol for global qubit control in silicon

Authors: Ingvild Hansen, Amanda E. Seedhouse, Kok Wai Chan, Fay Hudson, Kohei M. Itoh, Arne Laucht, Andre Saraiva, Chih Hwan Yang, Andrew S. Dzurak

Abstract: Quantum computing based on spins in the solid state allows for densely-packed arrays of quantum bits. While high-fidelity operation of single qubits has been demonstrated with individual control pulses, the operation of large-scale quantum processors requires a shift in paradigm towards global control solutions. Here we report the experimental implementation of a new type of qubit protocol - the S… ▽ More Quantum computing based on spins in the solid state allows for densely-packed arrays of quantum bits. While high-fidelity operation of single qubits has been demonstrated with individual control pulses, the operation of large-scale quantum processors requires a shift in paradigm towards global control solutions. Here we report the experimental implementation of a new type of qubit protocol - the SMART (Sinusoidally Modulated, Always Rotating and Tailored) protocol. As with a dressed qubit, we resonantly drive a two-level system with a continuous microwave field, but here we add a tailored modulation to the dressing field to achieve increased robustness to detuning noise and microwave amplitude fluctuations. We implement this new protocol to control a single spin confined in a silicon quantum dot and confirm the optimal modulation conditions predicted from theory. Universal control of a single qubit is demonstrated using modulated Stark shift control via the local gate electrodes. We measure an extended coherence time of $2$ ms and an average Clifford gate fidelity $>99$ $\%$ despite the relatively long qubit gate times ($>15$ $\unicode[serif]{x03BC}$s, $20$ times longer than a conventional square pulse gate), constituting a significant improvement over a conventional spin qubit and a dressed qubit. This work shows that future scalable spin qubit arrays could be operated using global microwave control and local gate addressability, while maintaining robustness to relevant experimental inhomogeneities. △ Less

Submitted 9 September, 2021; v1 submitted 2 August, 2021; originally announced August 2021.

Journal ref: Applied Physics Reviews 9, 031409 (2022)

Precision tomography of a three-qubit donor quantum processor in silicon

Authors: Mateusz T. Mądzik, Serwan Asaad, Akram Youssry, Benjamin Joecker, Kenneth M. Rudinger, Erik Nielsen, Kevin C. Young, Timothy J. Proctor, Andrew D. Baczewski, Arne Laucht, Vivien Schmitt, Fay E. Hudson, Kohei M. Itoh, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Andrew S. Dzurak, Christopher Ferrie, Robin Blume-Kohout, Andrea Morello

Abstract: Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, due to the lack of methods to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to… ▽ More Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, due to the lack of methods to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to sustain fault-tolerant quantum computation. Here we demonstrate universal quantum logic operations using a pair of ion-implanted 31P donor nuclei in a silicon nanoelectronic device. A nuclear two-qubit controlled-Z gate is obtained by imparting a geometric phase to a shared electron spin, and used to prepare entangled Bell states with fidelities up to 94.2(2.7)%. The quantum operations are precisely characterised using gate set tomography (GST), yielding one-qubit average gate fidelities up to 99.95(2)%, two-qubit average gate fidelity of 99.37(11)% and two-qubit preparation/measurement fidelities of 98.95(4)%. These three metrics indicate that nuclear spins in silicon are approaching the performance demanded in fault-tolerant quantum processors. We then demonstrate entanglement between the two nuclei and the shared electron by producing a Greenberger-Horne-Zeilinger three-qubit state with 92.5(1.0)% fidelity. Since electron spin qubits in semiconductors can be further coupled to other electrons or physically shuttled across different locations, these results establish a viable route for scalable quantum information processing using donor nuclear and electron spins. △ Less

Submitted 27 January, 2022; v1 submitted 6 June, 2021; originally announced June 2021.

Comments: 51 pages, including supplementary information. v3 reflects the final published version

Journal ref: Nature 601, 348 (2022)

Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot

Authors: S. D. Liles, F. Martins, D. S. Miserev, A. A. Kiselev, I. D. Thorvaldson, M. J. Rendell, I. K. Jin, F. E. Hudson, M. Veldhorst, K. M. Itoh, O. P. Sushkov, T. D. Ladd, A. S. Dzurak, A. R. Hamilton

Abstract: Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole spin states. Here, we study the underlying hole spin physics of the first hole in a silicon planar MOS quantum dot. We sh… ▽ More Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole spin states. Here, we study the underlying hole spin physics of the first hole in a silicon planar MOS quantum dot. We show that non-uniform electrode-induced strain produces nanometre-scale variations in the HH-LH splitting. Importantly, we find that this \RR{non-uniform strain causes} the HH-LH splitting to vary by up to 50\% across the active region of the quantum dot. We show that local electric fields can be used to displace the hole relative to the non-uniform strain profile, allowing a new mechanism for electric modulation of the hole g-tensor. Using this mechanism we demonstrate tuning of the hole $g$-factor by up to 500\%. In addition, we observe a \RR{potential} sweet spot where d$g_{(1\overline{1}0)}$/d$V$ = 0, offering a configuration to suppress spin decoherence caused by electrical noise. These results open a path towards a previously unexplored technology: engineering of \RR{non-uniform} strains to optimise spin-based devices. △ Less

Submitted 20 December, 2021; v1 submitted 9 December, 2020; originally announced December 2020.

Comments: 12 pages, 4 figures

Coherent spin qubit transport in silicon

Authors: J. Yoneda, W. Huang, M. Feng, C. H. Yang, K. W. Chan, T. Tanttu, W. Gilbert, R. C. C. Leon, F. E. Hudson, K. M. Itoh, A. Morello, S. D. Bartlett, A. Laucht, A. Saraiva, A. S. Dzurak

Abstract: A fault-tolerant quantum processor may be configured using stationary qubits interacting only with their nearest neighbours, but at the cost of significant overheads in physical qubits per logical qubit. Such overheads could be reduced by coherently transporting qubits across the chip, allowing connectivity beyond immediate neighbours. Here we demonstrate high-fidelity coherent transport of an ele… ▽ More A fault-tolerant quantum processor may be configured using stationary qubits interacting only with their nearest neighbours, but at the cost of significant overheads in physical qubits per logical qubit. Such overheads could be reduced by coherently transporting qubits across the chip, allowing connectivity beyond immediate neighbours. Here we demonstrate high-fidelity coherent transport of an electron spin qubit between quantum dots in isotopically-enriched silicon. We observe qubit precession in the inter-site tunnelling regime and assess the impact of qubit transport using Ramsey interferometry and quantum state tomography techniques. We report a polarization transfer fidelity of 99.97% and an average coherent transfer fidelity of 99.4%. Our results provide key elements for high-fidelity, on-chip quantum information distribution, as long envisaged, reinforcing the scaling prospects of silicon-based spin qubits. △ Less

Submitted 3 September, 2020; v1 submitted 10 August, 2020; originally announced August 2020.

Journal ref: Nature Communications 12, 4114 (2021)

Bell-state tomography in a silicon many-electron artificial molecule

Authors: Ross C. C. Leon, Chih Hwan Yang, Jason C. C. Hwang, Julien Camirand Lemyre, Tuomo Tanttu, Wei Huang, Jonathan Y. Huang, Fay E. Hudson, Kohei M. Itoh, Arne Laucht, Michel Pioro-Ladrière, Andre Saraiva, Andrew S. Dzurak

Abstract: An error-corrected quantum processor will require millions of qubits, accentuating the advantage of nanoscale devices with small footprints, such as silicon quantum dots. However, as for every device with nanoscale dimensions, disorder at the atomic level is detrimental to qubit uniformity. Here we investigate two spin qubits confined in a silicon double-quantum-dot artificial molecule. Each quant… ▽ More An error-corrected quantum processor will require millions of qubits, accentuating the advantage of nanoscale devices with small footprints, such as silicon quantum dots. However, as for every device with nanoscale dimensions, disorder at the atomic level is detrimental to qubit uniformity. Here we investigate two spin qubits confined in a silicon double-quantum-dot artificial molecule. Each quantum dot has a robust shell structure and, when operated at an occupancy of 5 or 13 electrons, has single spin-$\frac{1}{2}$ valence electron in its $p$- or $d$-orbital, respectively. These higher electron occupancies screen atomic-level disorder. The larger multielectron wavefunctions also enable significant overlap between neighbouring qubit electrons, while making space for an interstitial exchange-gate electrode. We implement a universal gate set using the magnetic field gradient of a micromagnet for electrically-driven single qubit gates, and a gate-voltage-controlled inter-dot barrier to perform two-qubit gates by pulsed exchange coupling. We use this gate set to demonstrate a Bell state preparation between multielectron qubits with fidelity 90.3%, confirmed by two-qubit state tomography using spin parity measurements. △ Less

Submitted 10 August, 2020; originally announced August 2020.

Journal ref: Nature Communications 12, 3228 (2021)

Spin coherence and depths of single nitrogen-vacancy centers created by ion implantation into diamond via screening masks

Authors: Shuntaro Ishizu, Kento Sasaki, Daiki Misonou, Tokuyuki Teraji, Kohei M. Itoh, Eisuke Abe

Abstract: We characterize single nitrogen-vacancy (NV) centers created by 10-keV N+ ion implantation into diamond via thin SiO$_2$ layers working as screening masks. Despite the relatively high acceleration energy compared with standard ones (< 5 keV) used to create near-surface NV centers, the screening masks modify the distribution of N$^+$ ions to be peaked at the diamond surface [Ito et al., Appl. Phys.… ▽ More We characterize single nitrogen-vacancy (NV) centers created by 10-keV N+ ion implantation into diamond via thin SiO$_2$ layers working as screening masks. Despite the relatively high acceleration energy compared with standard ones (< 5 keV) used to create near-surface NV centers, the screening masks modify the distribution of N$^+$ ions to be peaked at the diamond surface [Ito et al., Appl. Phys. Lett. 110, 213105 (2017)]. We examine the relation between coherence times of the NV electronic spins and their depths, demonstrating that a large portion of NV centers are located within 10 nm from the surface, consistent with Monte Carlo simulations. The effect of the surface on the NV spin coherence time is evaluated through noise spectroscopy, surface topography, and X-ray photoelectron spectroscopy. △ Less

Submitted 13 June, 2020; originally announced June 2020.

Comments: 10 pages, 8 figures. To appear in Journal of Applied Physics (Special Topics on Materials for Quantum Technologies: Computing, Information, and Sensing)

Journal ref: J. Appl. Phys. 127, 244502 (2020)

Detection and control of single proton spins in a thin layer of diamond grown by chemical vapor deposition

Authors: Kento Sasaki, Hideyuki Watanabe, Hitoshi Sumiya, Kohei M. Itoh, Eisuke Abe

Abstract: We report detection and coherent control of a single proton nuclear spin using an electronic spin of the nitrogen-vacancy (NV) center in diamond as a quantum sensor. In addition to determining the NV-proton hyperfine parameters by employing multipulse sequences, we polarize and coherently rotate the single proton spin, and detect an induced free precession. Observation of free induction decays is… ▽ More We report detection and coherent control of a single proton nuclear spin using an electronic spin of the nitrogen-vacancy (NV) center in diamond as a quantum sensor. In addition to determining the NV-proton hyperfine parameters by employing multipulse sequences, we polarize and coherently rotate the single proton spin, and detect an induced free precession. Observation of free induction decays is an essential ingredient for high resolution proton nuclear magnetic resonance, and the present work extends it to the atomic scale. We also discuss the origin of the proton as incorporation during chemical vapor deposition growth, which provides an opportunity to use protons in diamond as built-in quantum memories coupled with the NV center. △ Less

Submitted 17 September, 2020; v1 submitted 13 June, 2020; originally announced June 2020.

Comments: 6 pages, 4 figures. Published in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 117, 114002 (2020)

Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device

Authors: Mateusz T. Mądzik, Arne Laucht, Fay E. Hudson, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Kohei M. Itoh, Andrew S. Dzurak, Andrea Morello

Abstract: Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single donor atom, introduced in the silicon by ion implantation, the quantum information can be stored for nearly 1 second. However, manufacturing a scalable quantum processor with this method is considered challenging, because of the exponential s… ▽ More Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single donor atom, introduced in the silicon by ion implantation, the quantum information can be stored for nearly 1 second. However, manufacturing a scalable quantum processor with this method is considered challenging, because of the exponential sensitivity of the exchange interaction that mediates the coupling between the qubits. Here we demonstrate the conditional, coherent control of an electron spin qubit in an exchange-coupled pair of $^{31}$P donors implanted in silicon. The coupling strength, $J = 32.06 \pm 0.06$ MHz, is measured spectroscopically with unprecedented precision. Since the coupling is weaker than the electron-nuclear hyperfine coupling $A \approx 90$ MHz which detunes the two electrons, a native two-qubit Controlled-Rotation gate can be obtained via a simple electron spin resonance pulse. This scheme is insensitive to the precise value of $J$, which makes it suitable for the scale-up of donor-based quantum computers in silicon that exploit the Metal-Oxide-Semiconductor fabrication protocols commonly used in the classical electronics industry. △ Less

Submitted 29 June, 2020; v1 submitted 8 June, 2020; originally announced June 2020.

Comments: 10 pages, 5 figures, plus Supplementary Information. v2 contains additional references, and a simpler explanation of two-qubit CROT gates for donors in silicon

Journal ref: Nature Communications 12:181 (2021)

Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon

Authors: Kok Wai Chan, Harshad Sahasrabudhe, Wister Huang, Yu Wang, Henry C. Yang, Menno Veldhorst, Jason C. C. Hwang, Fahd A. Mohiyaddin, Fay E. Hudson, Kohei M. Itoh, Andre Saraiva, Andrea Morello, Arne Laucht, Rajib Rahman, Andrew S. Dzurak

Abstract: Quantum gates between spin qubits can be implemented leveraging the natural Heisenberg exchange interaction between two electrons in contact with each other. This interaction is controllable by electrically tailoring the overlap between electronic wavefunctions in quantum dot systems, as long as they occupy neighbouring dots. An alternative route is the exploration of superexchange - the coupling… ▽ More Quantum gates between spin qubits can be implemented leveraging the natural Heisenberg exchange interaction between two electrons in contact with each other. This interaction is controllable by electrically tailoring the overlap between electronic wavefunctions in quantum dot systems, as long as they occupy neighbouring dots. An alternative route is the exploration of superexchange - the coupling between remote spins mediated by a third idle electron that bridges the distance between quantum dots. We experimentally demonstrate direct exchange coupling and provide evidence for second neighbour mediated superexchange in a linear array of three single-electron spin qubits in silicon, inferred from the electron spin resonance frequency spectra. We confirm theoretically through atomistic modeling that the device geometry only allows for sizeable direct exchange coupling for neighbouring dots, while next nearest neighbour coupling cannot stem from the vanishingly small tail of the electronic wavefunction of the remote dots, and is only possible if mediated. △ Less

Submitted 16 April, 2020; originally announced April 2020.

Comments: 20 pages, 1.4MB, 4 figures

Journal ref: Nano Letters 2021, 21, 3, 1517-1522

Pauli Blockade in Silicon Quantum Dots with Spin-Orbit Control

Authors: Amanda Seedhouse, Tuomo Tanttu, Ross C. C. Leon, Ruichen Zhao, Kuan Yen Tan, Bas Hensen, Fay E. Hudson, Kohei M. Itoh, Jun Yoneda, Chih Hwan Yang, Andrea Morello, Arne Laucht, Susan N. Coppersmith, Andre Saraiva, Andrew S. Dzurak

Abstract: Quantum computation relies on accurate measurements of qubits not only for reading the output of the calculation, but also to perform error correction. Most proposed scalable silicon architectures utilize Pauli blockade of triplet states for spin-to-charge conversion. In recent experiments, there have been instances when instead of conventional triplet blockade readout, Pauli blockade is sustained… ▽ More Quantum computation relies on accurate measurements of qubits not only for reading the output of the calculation, but also to perform error correction. Most proposed scalable silicon architectures utilize Pauli blockade of triplet states for spin-to-charge conversion. In recent experiments, there have been instances when instead of conventional triplet blockade readout, Pauli blockade is sustained only between parallel spin configurations, with $|T_0\rangle$ relaxing quickly to the singlet state and leaving $|T_+\rangle$ and $|T_-\rangle$ states blockaded -- which we call \textit{parity readout}. Both types of blockade can be used for readout in quantum computing, but it is crucial to maximize the fidelity and understand in which regime the system operates. We devise and perform an experiment in which the crossover between parity and singlet-triplet readout can be identified by investigating the underlying physics of the $|T_0\rangle$ relaxation rate. This rate is tunable over four orders of magnitude by controlling the Zeeman energy difference between the dots induced by spin-orbit coupling, which in turn depends on the direction of the applied magnetic field. We suggest a theoretical model incorporating charge noise and relaxation effects that explains quantitatively our results. Investigating the model both analytically and numerically, we identify strategies to obtain on-demand either singlet-triplet or parity readout consistently across large arrays of dots. We also discuss how parity readout can be used to perform full two-qubit state tomography and its impact on quantum error detection schemes in large-scale silicon quantum computers. △ Less

Submitted 13 May, 2021; v1 submitted 15 April, 2020; originally announced April 2020.

Comments: Updated title and text

Journal ref: PRX Quantum 2, 010303 (2021)

Wide-field dynamic magnetic microscopy using double-double quantum driving of a diamond defect ensemble

Authors: Zeeshawn Kazi, Isaac M. Shelby, Hideyuki Watanabe, Kohei M. Itoh, Vaithiyalingam Shutthanandan, Paul A. Wiggins, Kai-Mei C. Fu

Abstract: Wide-field magnetometry can be realized by imaging the optically-detected magnetic resonance of diamond nitrogen vacancy (NV) center ensembles. However, NV ensemble inhomogeneities significantly limit the magnetic-field sensitivity of these measurements. We demonstrate a double-double quantum (DDQ) driving technique to facilitate wide-field magnetic imaging of dynamic magnetic fields at a micron s… ▽ More Wide-field magnetometry can be realized by imaging the optically-detected magnetic resonance of diamond nitrogen vacancy (NV) center ensembles. However, NV ensemble inhomogeneities significantly limit the magnetic-field sensitivity of these measurements. We demonstrate a double-double quantum (DDQ) driving technique to facilitate wide-field magnetic imaging of dynamic magnetic fields at a micron scale. DDQ imaging employs four-tone radio frequency pulses to suppress inhomogeneity-induced variations of the NV resonant response. As a proof-of-principle, we use the DDQ technique to image the dc magnetic field produced by individual magnetic-nanoparticles tethered by single DNA molecules to a diamond sensor surface. This demonstrates the efficacy of the diamond NV ensemble system in high-frame-rate magnetic microscopy, as well as single-molecule biophysics applications. △ Less

Submitted 15 January, 2021; v1 submitted 14 February, 2020; originally announced February 2020.

Journal ref: Phys. Rev. Applied 15, 054032 (2021)

Construction and operation of a tabletop system for nanoscale magnetometry with single nitrogen-vacancy centers in diamond

Authors: Daiki Misonou, Kento Sasaki, Shuntaro Ishizu, Yasuaki Monnai, Kohei M. Itoh, Eisuke Abe

Abstract: A single nitrogen-vacancy (NV) center in diamond is a prime candidate for a solid-state quantum magnetometer capable of detecting single nuclear spins with prospective application to nuclear magnetic resonance (NMR) at the nanoscale. Nonetheless, an NV magnetometer is still less accessible to many chemists and biologists, as its experimental setup and operational principle are starkly different fr… ▽ More A single nitrogen-vacancy (NV) center in diamond is a prime candidate for a solid-state quantum magnetometer capable of detecting single nuclear spins with prospective application to nuclear magnetic resonance (NMR) at the nanoscale. Nonetheless, an NV magnetometer is still less accessible to many chemists and biologists, as its experimental setup and operational principle are starkly different from those of conventional NMR. Here, we design, construct, and operate a compact tabletop-sized system for quantum sensing with a single NV center, built primarily from commercially available optical components and electronics. We show that our setup can implement state-of-the-art quantum sensing protocols that enable the detection of single $^{13}$C nuclear spins in diamond and the characterization of their interaction parameters, as well as the detection of a small ensemble of proton nuclear spins on the diamond surface. This article providing extensive discussions on the details of the setup and the experimental procedures, our system will be reproducible by those who have not worked on the NV centers previously. △ Less

Submitted 6 February, 2020; originally announced February 2020.

Comments: 25 pages, 14 figures, 7 tables. Published in AIP Advances (Open Access). Many parts are pedagogical

Journal ref: AIP Adv. 10, 025206 (2020)

Controllable freezing of the nuclear spin bath in a single-atom spin qubit

Authors: Mateusz T. Mądzik, Thaddeus D. Ladd, Fay E. Hudson, Kohei M. Itoh, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Arne Laucht, Andrea Morello

Abstract: The quantum coherence and gate fidelity of electron spin qubits in semiconductors is often limited by noise arising from coupling to a bath of nuclear spins. Isotopic enrichment of spin-zero nuclei such as $^{28}$Si has led to spectacular improvements of the dephasing time $T_2^*$ which, surprisingly, can extend two orders of magnitude beyond theoretical expectations. Using a single-atom $^{31}$P… ▽ More The quantum coherence and gate fidelity of electron spin qubits in semiconductors is often limited by noise arising from coupling to a bath of nuclear spins. Isotopic enrichment of spin-zero nuclei such as $^{28}$Si has led to spectacular improvements of the dephasing time $T_2^*$ which, surprisingly, can extend two orders of magnitude beyond theoretical expectations. Using a single-atom $^{31}$P qubit in enriched $^{28}$Si, we show that the abnormally long $T_2^*$ is due to the controllable freezing of the dynamics of the residual $^{29}$Si nuclei close to the donor. Our conclusions are supported by a nearly parameter-free modeling of the $^{29}$Si nuclear spin dynamics, which reveals the degree of back-action provided by the electron spin as it interacts with the nuclear bath. This study clarifies the limits of ergodic assumptions in analyzing many-body spin-problems under conditions of strong, frequent measurement, and provides novel strategies for maximizing coherence and gate fidelity of spin qubits in semiconductors. △ Less

Submitted 25 July, 2019; originally announced July 2019.

Comments: 11 pages, 5 figures

Journal ref: Science Advances 6 : eaba3442 (2020)

Coherent electrical control of a single high-spin nucleus in silicon

Authors: Serwan Asaad, Vincent Mourik, Benjamin Joecker, Mark A. I. Johnson, Andrew D. Baczewski, Hannes R. Firgau, Mateusz T. Mądzik, Vivien Schmitt, Jarryd J. Pla, Fay E. Hudson, Kohei M. Itoh, Jeffrey C. McCallum, Andrew S. Dzurak, Arne Laucht, Andrea Morello

Abstract: Nuclear spins are highly coherent quantum objects. In large ensembles, their control and detection via magnetic resonance is widely exploited, e.g. in chemistry, medicine, materials science and mining. Nuclear spins also featured in early ideas and demonstrations of quantum information processing. Scaling up these ideas requires controlling individual nuclei, which can be detected when coupled to… ▽ More Nuclear spins are highly coherent quantum objects. In large ensembles, their control and detection via magnetic resonance is widely exploited, e.g. in chemistry, medicine, materials science and mining. Nuclear spins also featured in early ideas and demonstrations of quantum information processing. Scaling up these ideas requires controlling individual nuclei, which can be detected when coupled to an electron. However, the need to address the nuclei via oscillating magnetic fields complicates their integration in multi-spin nanoscale devices, because the field cannot be localized or screened. Control via electric fields would resolve this problem, but previous methods relied upon transducing electric signals into magnetic fields via the electron-nuclear hyperfine interaction, which severely affects the nuclear coherence. Here we demonstrate the coherent quantum control of a single antimony (spin-7/2) nucleus, using localized electric fields produced within a silicon nanoelectronic device. The method exploits an idea first proposed in 1961 but never realized experimentally with a single nucleus. Our results are quantitatively supported by a microscopic theoretical model that reveals how the purely electrical modulation of the nuclear electric quadrupole interaction, in the presence of lattice strain, results in coherent nuclear spin transitions. The spin dephasing time, 0.1 seconds, surpasses by orders of magnitude those obtained via methods that require a coupled electron spin for electrical drive. These results show that high-spin quadrupolar nuclei could be deployed as chaotic models, strain sensors and hybrid spin-mechanical quantum systems using all-electrical controls. Integrating electrically controllable nuclei with quantum dots could pave the way to scalable nuclear- and electron-spin-based quantum computers in silicon that operate without the need for oscillating magnetic fields. △ Less

Submitted 3 June, 2019; originally announced June 2019.

Comments: Main text and figures followed by methods, extended data, and supplementary information

Journal ref: Nature 579, 205 (2020)

Silicon quantum processor unit cell operation above one Kelvin

Authors: C. H. Yang, R. C. C. Leon, J. C. C. Hwang, A. Saraiva, T. Tanttu, W. Huang, J. Camirand Lemyre, K. W. Chan, K. Y. Tan, F. E. Hudson, K. M. Itoh, A. Morello, M. Pioro-Ladrière, A. Laucht, A. S. Dzurak

Abstract: Quantum computers are expected to outperform conventional computers for a range of important problems, from molecular simulation to search algorithms, once they can be scaled up to large numbers of quantum bits (qubits), typically millions. For most solid-state qubit technologies, e.g. those using superconducting circuits or semiconductor spins, scaling poses a significant challenge as every addit… ▽ More Quantum computers are expected to outperform conventional computers for a range of important problems, from molecular simulation to search algorithms, once they can be scaled up to large numbers of quantum bits (qubits), typically millions. For most solid-state qubit technologies, e.g. those using superconducting circuits or semiconductor spins, scaling poses a significant challenge as every additional qubit increases the heat generated, while the cooling power of dilution refrigerators is severely limited at their operating temperature below 100 mK. Here we demonstrate operation of a scalable silicon quantum processor unit cell, comprising two qubits confined to quantum dots (QDs) at $\sim$1.5 Kelvin. We achieve this by isolating the QDs from the electron reservoir, initialising and reading the qubits solely via tunnelling of electrons between the two QDs. We coherently control the qubits using electrically-driven spin resonance (EDSR) in isotopically enriched silicon $^{28}$Si, attaining single-qubit gate fidelities of 98.6% and coherence time $T_2^*$ = 2$μ$s during `hot' operation, comparable to those of spin qubits in natural silicon at millikelvin temperatures. Furthermore, we show that the unit cell can be operated at magnetic fields as low as 0.1 T, corresponding to a qubit control frequency of 3.5 GHz, where the qubit energy is well below the thermal energy. The unit cell constitutes the core building block of a full-scale silicon quantum computer, and satisfies layout constraints required by error correction architectures. Our work indicates that a spin-based quantum computer could be operated at elevated temperatures in a simple pumped $^4$He system, offering orders of magnitude higher cooling power than dilution refrigerators, potentially enabling classical control electronics to be integrated with the qubit array. △ Less

Submitted 19 June, 2019; v1 submitted 25 February, 2019; originally announced February 2019.

Journal ref: Nature 580, 350-354 (2020)

Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot

Authors: R. C. C. Leon, C. H. Yang, J. C. C. Hwang, J. Camirand Lemyre, T. Tanttu, W. Huang, K. W. Chan, K. Y. Tan, F. E. Hudson, K. M. Itoh, A. Morello, A. Laucht, M. Pioro-Ladriere, A. Saraiva, A. S. Dzurak

Abstract: Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in the semiconductor material, including at the atomic scale, di… ▽ More Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in the semiconductor material, including at the atomic scale, disrupt this analogy between atoms and quantum dots, so that real devices seldom display such a systematic many-electron arrangement. We demonstrate here an electrostatically-defined quantum dot that is robust to disorder, revealing a well defined shell structure. We observe four shells (31 electrons) with multiplicities given by spin and valley degrees of freedom. We explore various fillings consisting of a single valence electron -- namely 1, 5, 13 and 25 electrons -- as potential qubits, and we identify fillings that yield a total spin-1 on the dot. An integrated micromagnet allows us to perform electrically-driven spin resonance (EDSR). Higher shell states are shown to be more susceptible to the driving field, leading to faster Rabi rotations of the qubit. We investigate the impact of orbital excitations of the p- and d-shell electrons on single qubits as a function of the dot deformation. This allows us to tune the dot excitation spectrum and exploit it for faster qubit control. Furthermore, hotspots arising from this tunable energy level structure provide a pathway towards fast spin initialisation. The observation of spin-1 states may be exploited in the future to study symmetry-protected topological states in antiferromagnetic spin chains and their application to quantum computing. △ Less

Submitted 6 May, 2019; v1 submitted 5 February, 2019; originally announced February 2019.

Journal ref: Nature Communications 11, 797 (2020)

Single-spin qubits in isotopically enriched silicon at low magnetic field

Authors: R. Zhao, T. Tanttu, K. Y. Tan, B. Hensen, K. W. Chan, J. C. C. Hwang, R. C. C. Leon, C. H. Yang, W. Gilbert, F. E. Hudson, K. M. Itoh, A. A. Kiselev, T. D. Ladd, A. Morello, A. Laucht, A. S. Dzurak

Abstract: Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and significant on-chip real estate for electron reservoirs, both of which limit the prospects for large scale multi-qubit systems. Alternatively, singlet-triplet (ST) rea… ▽ More Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and significant on-chip real estate for electron reservoirs, both of which limit the prospects for large scale multi-qubit systems. Alternatively, singlet-triplet (ST) readout enables high-fidelity spin-state measurements in much lower magnetic fields, without the need for reservoirs. Here, we demonstrate low-field operation of metal-oxide-silicon (MOS) quantum dot qubits by combining coherent single-spin control with high-fidelity, single-shot, Pauli-spin-blockade-based ST readout. We discover that the qubits decohere faster at low magnetic fields with $T_{2}^{Rabi}=18.6$~$μ$s and $T_2^*=1.4$~$μ$s at 150~mT. Their coherence is limited by spin flips of residual $^{29}$Si nuclei in the isotopically enriched $^{28}$Si host material, which occur more frequently at lower fields. Our finding indicates that new trade-offs will be required to ensure the frequency stabilization of spin qubits and highlights the importance of isotopic enrichment of device substrates for the realization of a scalable silicon-based quantum processor. △ Less

Submitted 23 August, 2019; v1 submitted 19 December, 2018; originally announced December 2018.

Journal ref: Nat Commun 10, 5500 (2019)

Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices

Authors: Stefanie B. Tenberg, Serwan Asaad, Mateusz T. Mądzik, Mark A. I. Johnson, Benjamin Joecker, Arne Laucht, Fay E. Hudson, Kohei M. Itoh, A. Malwin Jakob, Brett C. Johnson, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Robert Joynt, Andrea Morello

Abstract: We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the environment of the spins. The measurements are conducted at low temperatures ($T\approx 100$~mK), as a function of external magnetic field $B_0$ and donor… ▽ More We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the environment of the spins. The measurements are conducted at low temperatures ($T\approx 100$~mK), as a function of external magnetic field $B_0$ and donor electrochemical potential $μ_{\rm D}$. We observe a magnetic field dependence of the form $1/T_1\propto B_0^5$ for $B_0\gtrsim 3\,$ T, corresponding to the phonon-induced relaxation typical of donors in the bulk. However, the relaxation rate varies by up to two orders of magnitude between different devices. We attribute these differences to variations in lattice strain at the location of the donor. For $B_0\lesssim 3\,$T, the relaxation rate changes to $1/T_1\propto B_0$ for two devices. This is consistent with relaxation induced by evanescent-wave Johnson noise created by the metal structures fabricated above the donors. At such low fields, where $T_1>1\,$s, we also observe and quantify the spurious increase of $1/T_1$ when the electrochemical potential of the spin excited state $|\uparrow\rangle$ comes in proximity to empty states in the charge reservoir, leading to spin-dependent tunneling that resets the spin to $|\downarrow\rangle$. These results give precious insights into the microscopic phenomena that affect spin relaxation in MOS nanoscale devices, and provide strategies for engineering spin qubits with improved spin lifetimes. △ Less

Submitted 26 March, 2019; v1 submitted 17 December, 2018; originally announced December 2018.

Comments: 14 pages, 8 figures. Version 2 has extensive text revisions, typo corrections, and two extra authors

Journal ref: Phys. Rev. B 99, 205306 (2019)

Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift

Authors: K. Takeda, J. Yoneda, T. Otsuka, T. Nakajima, M. R. Delbecq, G. Allison, Y. Hoshi, N. Usami, K. M. Itoh, S. Oda, T. Kodera, S. Tarucha

Abstract: Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors rather than decoherence, making characterization and suppression of their influence crucial for further improvement. Here we report that the control fidelity of… ▽ More Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors rather than decoherence, making characterization and suppression of their influence crucial for further improvement. Here we report that the control fidelity of Si/SiGe spin qubits can be limited by the microwave-induced frequency shift of electric dipole spin resonance and it can be improved by optimization of control pulses. As we increase the control microwave amplitude, we observe a shift of the qubit resonance frequency, in addition to the increasing Rabi frequency. We reveal that this limits control fidelity with a conventional amplitude-modulated microwave pulse below 99.8%. In order to achieve a gate fidelity > 99.9%, we introduce a quadrature control method, and validate this approach experimentally by randomized benchmarking. Our finding facilitates realization of an ultra-high fidelity qubit with electron spins in quantum dots. △ Less

Submitted 29 October, 2018; originally announced October 2018.

Journal ref: npj Quantum Information (2018) 4:54

Silicon qubit fidelities approaching incoherent noise limits via pulse engineering

Authors: C. H. Yang, K. W. Chan, R. Harper, W. Huang, T. Evans, J. C. C. Hwang, B. Hensen, A. Laucht, T. Tanttu, F. E. Hudson, S. T. Flammia, K. M. Itoh, A. Morello, S. D. Bartlett, A. S. Dzurak

Abstract: The performance requirements for fault-tolerant quantum computing are very stringent. Qubits must be manipulated, coupled, and measured with error rates well below 1%. For semiconductor implementations, silicon quantum dot spin qubits have demonstrated average single-qubit Clifford gate error rates that approach this threshold, notably with error rates of 0.14% in isotopically enriched $^{28}$Si/S… ▽ More The performance requirements for fault-tolerant quantum computing are very stringent. Qubits must be manipulated, coupled, and measured with error rates well below 1%. For semiconductor implementations, silicon quantum dot spin qubits have demonstrated average single-qubit Clifford gate error rates that approach this threshold, notably with error rates of 0.14% in isotopically enriched $^{28}$Si/SiGe devices. This gate performance, together with high-fidelity two-qubit gates and measurements, is only known to meet the threshold for fault-tolerant quantum computing in some architectures when assuming that the noise is incoherent, and still lower error rates are needed to reduce overhead. Here we experimentally show that pulse engineering techniques, widely used in magnetic resonance, improve average Clifford gate error rates for silicon quantum dot spin qubits to 0.043%,a factor of 3 improvement on previous best results for silicon quantum dot devices. By including tomographically complete measurements in randomised benchmarking, we infer a higher-order feature of the noise called the unitarity, which measures the coherence of noise. This in turn allows us to theoretically predict that average gate error rates as low as 0.026% may be achievable with further pulse improvements. These fidelities are ultimately limited by Markovian noise, which we attribute to charge noise emanating from the silicon device structure itself, or the environment. △ Less

Submitted 27 January, 2020; v1 submitted 25 July, 2018; originally announced July 2018.

Journal ref: Nature Electronics 2, 151-158 (2019)

Dynamical decoupling of interacting dipolar spin ensembles

Authors: Evan S. Petersen, A. M. Tyryshkin, K. M. Itoh, Joel W. Ager, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. L. W. Thewalt, S. A. Lyon

Abstract: We demonstrate that CPMG and XYXY decoupling sequences with non-ideal $π$ pulses can reduce dipolar interactions between spins of the same species in solids. Our simulations of pulsed electron spin resonance (ESR) experiments show that $π$ rotations with small ($<$~10\%) imperfections refocus instantaneous diffusion. Here, the intractable N-body problem of interacting dipoles is approximated by th… ▽ More We demonstrate that CPMG and XYXY decoupling sequences with non-ideal $π$ pulses can reduce dipolar interactions between spins of the same species in solids. Our simulations of pulsed electron spin resonance (ESR) experiments show that $π$ rotations with small ($<$~10\%) imperfections refocus instantaneous diffusion. Here, the intractable N-body problem of interacting dipoles is approximated by the average evolution of a single spin in a changing mean field. These calculations agree well with experiments and do not require powerful hardware. Our results add to past attempts to explain similar phenomena in solid state nuclear magnetic resonance (NMR). Although the fundamental physics of NMR are similar to ESR, the larger linewidths in ESR and stronger dipolar interactions between electron spins compared to nuclear spins preclude drawing conclusions from NMR studies alone. For bulk spins, we also find that using XYXY results in less inflation of the deduced echo decay times as compared to decays obtained with CPMG. △ Less

Submitted 13 July, 2018; originally announced July 2018.

Comments: 10 pages, 5 figures

Three-dimensional localization spectroscopy of individual nuclear spins with sub-Angstrom resolution

Authors: J. Zopes, K. S. Cujia, K. Sasaki, J. M. Boss, K. M. Itoh, C. L. Degen

Abstract: We report on precise localization spectroscopy experiments of individual 13C nuclear spins near a central electronic sensor spin in a diamond chip. By detecting the nuclear free precession signals in rapidly switchable external magnetic fields, we retrieve the three-dimensional spatial coordinates of the nuclear spins with sub-Angstrom resolution and for distances beyond 10 Angstroms. We further s… ▽ More We report on precise localization spectroscopy experiments of individual 13C nuclear spins near a central electronic sensor spin in a diamond chip. By detecting the nuclear free precession signals in rapidly switchable external magnetic fields, we retrieve the three-dimensional spatial coordinates of the nuclear spins with sub-Angstrom resolution and for distances beyond 10 Angstroms. We further show that the Fermi contact contribution can be constrained by measuring the nuclear g-factor enhancement. The presented method will be useful for mapping the atomic-scale structure of single molecules, an ambitious yet important goal of nanoscale nuclear magnetic resonance spectroscopy. △ Less

Submitted 13 June, 2018; originally announced June 2018.

Journal ref: Nature Communications 9, 4678 (2018)

Determination of the Position of a Single Nuclear Spin from Free Nuclear Precessions Detected by a Solid-State Quantum Sensor

Authors: Kento Sasaki, Kohei M. Itoh, Eisuke Abe

Abstract: We report on a nanoscale quantum-sensing protocol which tracks a free precession of a single nuclear spin and is capable of estimating an azimuthal angle---a parameter which standard multipulse protocols cannot determine---of the target nucleus. Our protocol combines pulsed dynamic nuclear polarization, a phase-controlled radiofrequency pulse, and a multipulse AC sensing sequence with a modified r… ▽ More We report on a nanoscale quantum-sensing protocol which tracks a free precession of a single nuclear spin and is capable of estimating an azimuthal angle---a parameter which standard multipulse protocols cannot determine---of the target nucleus. Our protocol combines pulsed dynamic nuclear polarization, a phase-controlled radiofrequency pulse, and a multipulse AC sensing sequence with a modified readout pulse. Using a single nitrogen-vacancy center as a solid-state quantum sensor, we experimentally demonstrate this protocol on a single 13C nuclear spin in diamond and uniquely determine the lattice site of the target nucleus. Our result paves the way for magnetic resonance imaging at the single-molecular level. △ Less

Submitted 14 June, 2018; v1 submitted 31 May, 2018; originally announced June 2018.

Comments: 21 pages, 15 figures, updated Ref. [39] (J. Zopes et al. arXiv:1806.04883)

Journal ref: Phys. Rev. B 98, 121405 (2018)

Fidelity benchmarks for two-qubit gates in silicon

Authors: W. Huang, C. H. Yang, K. W. Chan, T. Tanttu, B. Hensen, R. C. C. Leon, M. A. Fogarty, J. C. C. Hwang, F. E. Hudson, K. M. Itoh, A. Morello, A. Laucht, A. S. Dzurak

Abstract: Universal quantum computation will require qubit technology based on a scalable platform, together with quantum error correction protocols that place strict limits on the maximum infidelities for one- and two-qubit gate operations. While a variety of qubit systems have shown high fidelities at the one-qubit level, superconductor technologies have been the only solid-state qubits manufactured via s… ▽ More Universal quantum computation will require qubit technology based on a scalable platform, together with quantum error correction protocols that place strict limits on the maximum infidelities for one- and two-qubit gate operations. While a variety of qubit systems have shown high fidelities at the one-qubit level, superconductor technologies have been the only solid-state qubits manufactured via standard lithographic techniques which have demonstrated two-qubit fidelities near the fault-tolerant threshold. Silicon-based quantum dot qubits are also amenable to large-scale manufacture and can achieve high single-qubit gate fidelities (exceeding 99.9%) using isotopically enriched silicon. However, while two-qubit gates have been demonstrated in silicon, it has not yet been possible to rigorously assess their fidelities using randomized benchmarking, since this requires sequences of significant numbers of qubit operations ($\gtrsim 20$) to be completed with non-vanishing fidelity. Here, for qubits encoded on the electron spin states of gate-defined quantum dots, we demonstrate Bell state tomography with fidelities ranging from 80% to 89%, and two-qubit randomized benchmarking with an average Clifford gate fidelity of 94.7% and average Controlled-ROT (CROT) fidelity of 98.0%. These fidelities are found to be limited by the relatively slow gate times employed here compared with the decoherence times $T_2^*$ of the qubits. Silicon qubit designs employing fast gate operations based on high Rabi frequencies, together with advanced pulsing techniques, should therefore enable significantly higher fidelities in the near future. △ Less

Submitted 26 July, 2018; v1 submitted 14 May, 2018; originally announced May 2018.

Journal ref: Nature 569, 532-536 (2019)

Coherent control of solid state nuclear spin nano-ensembles

Authors: Thomas Unden, Nikolas Tomek, Timo Weggler, Florian Frank, Paz London, Jonathan Zopes, Christian Degen, Nicole Raatz, Jan Meijer, Hideyuki Watanabe, Kohei M. Itoh, Martin B. Plenio, Boris Naydenov, Fedor Jelezko

Abstract: Detecting and controlling nuclear spin nano-ensembles is crucial for the further development of nuclear magnetic resonance (NMR) spectroscopy and for the emerging solid state quantum technology. Here we present the fabrication of a $\approx$ 1 nanometre thick diamond layer consisting of $^{13}$C nuclear spins doped with Nitrogen-Vacancy centres (NV) embedded in a spin-free $^{12}$C crystal matrix.… ▽ More Detecting and controlling nuclear spin nano-ensembles is crucial for the further development of nuclear magnetic resonance (NMR) spectroscopy and for the emerging solid state quantum technology. Here we present the fabrication of a $\approx$ 1 nanometre thick diamond layer consisting of $^{13}$C nuclear spins doped with Nitrogen-Vacancy centres (NV) embedded in a spin-free $^{12}$C crystal matrix. A single NV in the vicinity of the layer is used for polarization of the $^{13}$C spins and the readout of their magnetization. We demonstrate a method for coherent control of few tens of nuclear spins by using radio frequency pulses and show the basic coherent control experiments - Rabi oscillations, Ramsey spectroscopy and Hahn echo, though any NMR pulse sequence can be implemented. The results shown present a first steps towards the realization of a nuclear spin based quantum simulator. △ Less

Submitted 8 February, 2018; originally announced February 2018.

Journal ref: Npj Quant. Inf. 4, 39 (2018)

Measuring electron spin flip-flops through nuclear spin echo decays

Authors: Evan S. Petersen, Alexei M. Tyryshkin, Kohei M. Itoh, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Mike L. W. Thewalt, Stephen A. Lyon

Abstract: We use the nuclear spin coherence of $^{31}$P donors in $^{28}$Si to determine flip-flop rates of donor electron spins. Isotopically purified $^{28}$Si crystals minimize the number of $^{29}$Si flip-flops, and measurements at 1.7 K suppress electron spin relaxation. The crystals have donor concentrations ranging from $1.2\times10^{14}$ to $3.3\times10^{15}~\text{P/cm}^3$, allowing us to detect how… ▽ More We use the nuclear spin coherence of $^{31}$P donors in $^{28}$Si to determine flip-flop rates of donor electron spins. Isotopically purified $^{28}$Si crystals minimize the number of $^{29}$Si flip-flops, and measurements at 1.7 K suppress electron spin relaxation. The crystals have donor concentrations ranging from $1.2\times10^{14}$ to $3.3\times10^{15}~\text{P/cm}^3$, allowing us to detect how electron flip-flop rates change with donor density. We also simulate how electron spin flip-flops can cause nuclear spin decoherence. We find that when these flip-flops are the primary cause of decoherence, Hahn echo decays have a stretched exponential form. For our two higher donor density crystals ($> 10^{15}~\text{P/cm}^3$), there is excellent agreement between simulations and experiments. In lower density crystals ($< 10^{15}~\text{P/cm}^3$), there is no longer agreement between simulations and experiments, suggesting a different, unknown mechanism is limiting nuclear spin coherence. The nuclear spin coherence in the lowest density crystal ($1.2 \times 10^{14}~\text{P/cm}^3$) allows us to place upper bounds on the magnitude of noise sources in bulk crystals such as electric field fluctuations that may degrade silicon quantum devices. △ Less

Submitted 12 September, 2017; v1 submitted 8 September, 2017; originally announced September 2017.

Comments: 13 pages, 4 figures

A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise

Authors: J. Yoneda, K. Takeda, T. Otsuka, T. Nakajima, M. R. Delbecq, G. Allison, T. Honda, T. Kodera, S. Oda, Y. Hoshi, N. Usami, K. M. Itoh, S. Tarucha

Abstract: Recent advances towards spin-based quantum computation have been primarily fuelled by elaborate isolation from noise sources, such as surrounding nuclear spins and spin-electric susceptibility, to extend spin coherence. In the meanwhile, addressable single-spin and spin-spin manipulations in multiple-qubit systems will necessitate sizable spin-electric coupling. Given background charge fluctuation… ▽ More Recent advances towards spin-based quantum computation have been primarily fuelled by elaborate isolation from noise sources, such as surrounding nuclear spins and spin-electric susceptibility, to extend spin coherence. In the meanwhile, addressable single-spin and spin-spin manipulations in multiple-qubit systems will necessitate sizable spin-electric coupling. Given background charge fluctuation in nanostructures, however, its compatibility with enhanced coherence should be crucially questioned. Here we realise a single-electron spin qubit with isotopically-enriched phase coherence time (20 microseconds) and fast electrical control speed (up to 30 MHz) mediated by extrinsic spin-electric coupling. Using rapid spin rotations, we reveal that the free-evolution dephasing is caused by charge (instead of conventional magnetic) noise featured by a 1/f spectrum over seven decades of frequency. The qubit nevertheless exhibits superior performance with single-qubit gate fidelities exceeding 99.9% on average. Our work strongly suggests that designing artificial spin-electric coupling with account taken of charge noise is a promising route to large-scale spin-qubit systems having fault-tolerant controllability. △ Less

Submitted 4 August, 2017; originally announced August 2017.

Journal ref: Nature Nanotechnology 13, 102-106 (2018)

Nitrogen-vacancy centers created by N$^+$ ion implantation through screening SiO$_2$ layers on diamond

Authors: Kazuki Ito, Hiroshi Saito, Hideyuki Watanabe, Tokuyuki Teraji, Kohei M. Itoh, Eisuke Abe

Abstract: We report on an ion implantation technique utilizing a screening mask made of SiO$_2$ to control both the depth profile and the dose. By appropriately selecting the thickness of the screening layer, this method fully suppresses the ion channeling, brings the location of the highest NV density to the surface, and effectively reduces the dose by more than three orders of magnitude. With a standard i… ▽ More We report on an ion implantation technique utilizing a screening mask made of SiO$_2$ to control both the depth profile and the dose. By appropriately selecting the thickness of the screening layer, this method fully suppresses the ion channeling, brings the location of the highest NV density to the surface, and effectively reduces the dose by more than three orders of magnitude. With a standard ion implantation system operating at the energy of 10 keV and the dose of 10$^{11}$ cm$^2$ and without an additional etching process, we create single NV centers close to the surface with coherence times of a few tens of $μ$s. △ Less

Submitted 18 March, 2017; originally announced March 2017.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 110, 213105 (2017)

Coherent control via weak measurements in $^{31}$P single-atom electron and nuclear spin qubits

Authors: J. T. Muhonen, J. P. Dehollain, A. Laucht, S. Simmons, R. Kalra, F. E. Hudson, D. N. Jamieson, J. C. McCallum, K. M. Itoh, A. S. Dzurak, A. Morello

Abstract: The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and the nuclear spin states of a single $^{31}$P donor in silicon. We first show how the partial collapse of the nuclear spin due to measurement can be… ▽ More The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and the nuclear spin states of a single $^{31}$P donor in silicon. We first show how the partial collapse of the nuclear spin due to measurement can be used to coherently rotate the spin to a desired pure state. We explicitly demonstrate that phase coherence is preserved throughout multiple sequential single-shot weak measurements, and that the partial state collapse can be reversed. Second, we use the relation between measurement strength and perturbation of the nuclear state as a physical meter to extract the tunneling rates between the $^{31}$P donor and a nearby electron reservoir from data, conditioned on observing no tunneling events. Our experiments open avenues to measurement-based state preparation, steering and feedback protocols for spin systems in the solid state, and highlight the fundamental connection between information gain and state modification in quantum mechanics. △ Less

Submitted 26 February, 2017; originally announced February 2017.

Comments: 6 pages main text + 3 pages supplementary

Journal ref: Phys. Rev. B 98, 155201 (2018)