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Van der Waals waveguide quantum electrodynamics probed by infrared nano-photoluminescence
Authors:
Samuel L. Moore,
Hae Yeon Lee,
Nicholas Rivera,
Yuzuka Karube,
Mark Ziffer,
Emanuil S. Yanev,
Thomas P. Darlington,
Aaron J. Sternbach,
Madisen A. Holbrook,
Jordan Pack,
Xiaodong Xu,
Cory R. Dean,
Jonathan S. Owen,
P. James Schuck,
Milan Delor,
Xiaoyang Zhu,
James Hone,
Dmitri N. Basov
Abstract:
Atomically layered van der Waals (vdW) materials exhibit remarkable properties, including highly-confined infrared waveguide modes and the capacity for infrared emission in the monolayer limit. Here, we engineered structures that leverage both of these nano-optical functionalities. Specifically, we encased a photoluminescing atomic sheet of MoTe2 within two bulk crystals of WSe2, forming a vdW wav…
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Atomically layered van der Waals (vdW) materials exhibit remarkable properties, including highly-confined infrared waveguide modes and the capacity for infrared emission in the monolayer limit. Here, we engineered structures that leverage both of these nano-optical functionalities. Specifically, we encased a photoluminescing atomic sheet of MoTe2 within two bulk crystals of WSe2, forming a vdW waveguide for the embedded light-emitting monolayer. The modified electromagnetic environment offered by the WSe2 waveguide alters MoTe2 spontaneous emission, a phenomenon we directly image with our interferometric nano-photoluminescence technique. We captured spatially-oscillating nanoscale patterns prompted by spontaneous emission from MoTe2 into waveguide modes of WSe2 slabs. We quantify the resulting Purcell-enhanced emission rate within the framework of a waveguide quantum electrodynamics (QED) model, relating the MoTe2 spontaneous emission rate to the measured waveguide dispersion. Our work marks a significant advance in the implementation of all-vdW QED waveguides.
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Submitted 11 June, 2025;
originally announced June 2025.
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Transdimensional anomalous Hall effect in rhombohedral thin graphite
Authors:
Qingxin Li,
Hua Fan,
Min Li,
Yinghai Xu,
Junwei Song,
Kenji Watanabe,
Takashi Taniguchi,
Hua Jiang,
X. C. Xie,
James Hone,
Cory Dean,
Yue Zhao,
Jianpeng Liu,
Lei Wang
Abstract:
Anomalous Hall effect (AHE), occurring in materials with broken time-reversal symmetry, epitomizes the intricate interplay between magnetic order and orbital motions of electrons[1-4]. In two dimensional (2D) systems, AHE is always coupled with out-of-plane orbital magnetization associated in-plane chiral orbital motions. In three dimensional (3D) systems, carriers can tunnel or scatter along the…
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Anomalous Hall effect (AHE), occurring in materials with broken time-reversal symmetry, epitomizes the intricate interplay between magnetic order and orbital motions of electrons[1-4]. In two dimensional (2D) systems, AHE is always coupled with out-of-plane orbital magnetization associated in-plane chiral orbital motions. In three dimensional (3D) systems, carriers can tunnel or scatter along the third dimension within the vertical mean free path lz. When sample thickness far exceeds lz, scattering disrupts coherent out-of-plane motion, making 3D AHE effectively a thickness-averaged 2D counterpart[4] -- still governed by out-of-plane orbital magnetization arising from in-plane orbital motions. Here, we explore an uncharted regime where the sample thickness is much larger than the atomic layer thickness yet smaller than or comparable to lz. In such "transdimensional" regime, carriers can sustain coherent orbital motions both within and out of the 2D plane, leading to a fundamentally new type of AHE that couples both out-of-plane and in-plane orbital magnetizations. We report the first observation of such phenomenon -- transdimensional AHE (TDAHE) -- in electrostatically gated rhombohedral ennealayer graphene. This state emerges from a peculiar metallic phase that spontaneously breaks time-reversal, mirror and rotational symmetries driven by electron-electron interactions. Such TDAHE manifests as concurrent out-of-plane and in-plane Hall resistance hysteresis, controlled by external magnetic fields along either direction. Our findings unveils a new class of AHE, opening an unexplored paradigm for correlated and topological physics in transdimensional systems.
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Submitted 6 May, 2025;
originally announced May 2025.
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Hidden States and Dynamics of Fractional Fillings in tMoTe2 Moiré Superlattices
Authors:
Yiping Wang,
Jeongheon Choe,
Eric Anderson,
Weijie Li,
Julian Ingham,
Eric A. Arsenault,
Yiliu Li,
Xiaodong Hu,
Takashi Taniguchi,
Kenji Watanabe,
Xavier Roy,
Dmitri Basov,
Di Xiao,
Raquel Queiroz,
James C. Hone,
Xiaodong Xu,
X. -Y. Zhu
Abstract:
The fractional quantum anomalous Hall (FQAH) effect was recently discovered in twisted MoTe2 bilayers (tMoTe2). Experiments to date have revealed Chern insulators from hole doping at v = -1, -2/3, -3/5, and -4/7 (per moiré unit cell). In parallel, theories predict that, between v = -1 and -3, there exist exotic quantum phases, such as the coveted fractional topological insulators (FTI), fractional…
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The fractional quantum anomalous Hall (FQAH) effect was recently discovered in twisted MoTe2 bilayers (tMoTe2). Experiments to date have revealed Chern insulators from hole doping at v = -1, -2/3, -3/5, and -4/7 (per moiré unit cell). In parallel, theories predict that, between v = -1 and -3, there exist exotic quantum phases, such as the coveted fractional topological insulators (FTI), fractional quantum spin Hall (FQSH) states, and non-abelian fractional states. Here we employ transient optical spectroscopy on tMoTe2 to reveal nearly 20 hidden states at fractional fillings that are absent in static optical sensing or transport measurements. A pump pulse selectively excites charge across the correlated or pseudo gaps, leading to the disordering (melting) of correlated states. A probe pulse detects the subsequent melting and recovery dynamics via exciton and trion sensing. Besides the known states, we observe additional fractional fillings between v = 0 and -1 and a large number of states on the electron doping side (v > 0). Most importantly, we observe new states at fractional fillings of the Chern bands at v = -4/3, -3/2, -5/3, -7/3, -5/2, and -8/3. These states are potential candidates for the predicted exotic topological phases. Moreover, we show that melting of correlated states occurs on two distinct time scales, 2-4 ps and 180-270 ps, attributed to electronic and phonon mechanisms, respectively. We discuss the differing dynamics of the electron and hole doped states from the distinct moiré conduction and valence bands.
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Submitted 28 February, 2025;
originally announced February 2025.
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Signatures of collective photon emission and ferroelectric ordering of excitons near their Mott insulating state in a WSe$_2$/WS$_2$ heterobilayer
Authors:
Luka Matej Devenica,
Zach Hadjri,
Jan Kumlin,
Runtong Li,
Weijie Li,
Daniel Suarez Forrero,
Valeria Vento,
Nicolas Ubrig,
Song Liu,
James Hone,
Kenji Watanabe,
Takashi Taniguchi,
Thomas Pohl,
Ajit Srivastava
Abstract:
Spontaneous symmetry breaking, arising from the competition of interactions and quantum fluctuations, is fundamental to understanding ordered electronic phases. Although electrically neutral, optical excitations like excitons can interact through their dipole moment, raising the possibility of optically active ordered phases. The effects of spontaneous ordering on optical properties remain largely…
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Spontaneous symmetry breaking, arising from the competition of interactions and quantum fluctuations, is fundamental to understanding ordered electronic phases. Although electrically neutral, optical excitations like excitons can interact through their dipole moment, raising the possibility of optically active ordered phases. The effects of spontaneous ordering on optical properties remain largely unexplored. Recent observations of the excitonic Mott insulating state in semiconducting moiré crystals make them promising for addressing this question. Here, we present evidence for an in-plane ferroelectric phase of dipolar moiré excitons driven by strong exciton-exciton interactions. We discover a surprising speed-up of photon emission at late times and low densities in excitonic decay. This counterintuitive behavior is attributed to collective radiance, linked to the transition between disordered and symmetry-broken ferroelectric phases of moiré excitons. Our findings provide first evidence for strong dipolar inter-site interactions in moiré lattices, demonstrate collective photon emission as a probe for moiré quantum materials, and pave the way for exploring cooperative optical phenomena in strongly correlated systems.
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Submitted 26 February, 2025;
originally announced February 2025.
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Robust Super-Moiré in Large Angle Single-Twist Bilayers
Authors:
Yanxing Li,
Chuqiao Shi,
Fan Zhang,
Xiaohui Liu,
Yuan Xue,
Viet-Anh Ha,
Qiang Gao,
Chengye Dong,
Yu-chuan Lin,
Luke N Holtzman,
Nicolas Morales-Durán,
Hyunsue Kim,
Yi Jiang,
Madisen Holbrook,
James Hone,
Katayun Barmak,
Joshua Robinson,
Xiaoqin Li,
Feliciano Giustino,
Eslam Khalaf,
Yimo Han,
Chih-Kang Shih
Abstract:
Forming long wavelength moiré superlattices (MSL) at small-angle twist van der Waals (vdW) bilayers has been a key approach to creating moiré flat bands. The small-angle twist, however, leads to strong lattice reconstruction, causing domain walls and moiré disorders, which pose considerable challenges in engineering such platforms. At large twist angles, the rigid lattices render a more robust, bu…
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Forming long wavelength moiré superlattices (MSL) at small-angle twist van der Waals (vdW) bilayers has been a key approach to creating moiré flat bands. The small-angle twist, however, leads to strong lattice reconstruction, causing domain walls and moiré disorders, which pose considerable challenges in engineering such platforms. At large twist angles, the rigid lattices render a more robust, but shorter wavelength MSL, making it difficult to engineer flat bands. Here, we depict a novel approach to tailoring robust super-moiré (SM) structures that combines the advantages of both small-twist and large-twist transition metal dichalcogenides (TMDs) bilayers using only a single twist angle near a commensurate angle. Structurally, we unveil the spontaneous formation of a periodic arrangement of three inequivalent commensurate moiré (CM) stacking, where the angle deviation from the commensurate angle can tune the periodicity. Electronically, we reveal a large set of van Hove singularities (VHSs) that indicate strong band hybridization, leading to flat bands near the valence band maximum. Our study paves the way for a new platform of robust SM bilayers with structural rigidity and controllable wavelength, extending the investigation of the interplay among band topology, quantum geometry, and moiré superconductivity to the large twist angle regime.
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Submitted 24 February, 2025; v1 submitted 17 February, 2025;
originally announced February 2025.
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Crystalline superconductor-semiconductor Josephson junctions for compact superconducting qubits
Authors:
Jesse Balgley,
Jinho Park,
Xuanjing Chu,
Ethan G. Arnault,
Martin V. Gustafsson,
Leonardo Ranzani,
Madisen Holbrook,
Kenji Watanabe,
Takashi Taniguchi,
Vasili Perebeinos,
James Hone,
Kin Chung Fong
Abstract:
The narrow bandgap of semiconductors allows for thick, uniform Josephson junction barriers, potentially enabling reproducible, stable, and compact superconducting qubits. We study vertically stacked van der Waals Josephson junctions with semiconducting weak links, whose crystalline structures and clean interfaces offer a promising platform for quantum devices. We observe robust Josephson coupling…
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The narrow bandgap of semiconductors allows for thick, uniform Josephson junction barriers, potentially enabling reproducible, stable, and compact superconducting qubits. We study vertically stacked van der Waals Josephson junctions with semiconducting weak links, whose crystalline structures and clean interfaces offer a promising platform for quantum devices. We observe robust Josephson coupling across 2--12 nm (3--18 atomic layers) of semiconducting WSe$_2$ and, notably, a crossover from proximity- to tunneling-type behavior with increasing weak link thickness. Building on these results, we fabricate a prototype all-crystalline merged-element transmon qubit with transmon frequency and anharmonicity closely matching design parameters. We demonstrate dispersive coupling between this transmon and a microwave resonator, highlighting the potential of crystalline superconductor-semiconductor structures for compact, tailored superconducting quantum devices.
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Submitted 24 January, 2025;
originally announced January 2025.
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Real-Space Imaging of the Band Topology of Transition Metal Dichalcogenides
Authors:
Madisen Holbrook,
Julian Ingham,
Daniel Kaplan,
Luke Holtzman,
Brenna Bierman,
Nicholas Olson,
Luca Nashabeh,
Song Liu,
Xiaoyang Zhu,
Daniel Rhodes,
Katayun Barmak,
James Hone,
Raquel Queiroz,
Abhay Pasupathy
Abstract:
The topological properties of Bloch bands are intimately tied to the structure of their electronic wavefunctions within the unit cell of a crystal. Here, we show that scanning tunneling microscopy (STM) measurements on the prototypical transition metal dichalcogenide (TMD) semiconductor WSe$_2$ can be used to unambiguously fix the location of the Wannier center of the valence band. Using site-spec…
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The topological properties of Bloch bands are intimately tied to the structure of their electronic wavefunctions within the unit cell of a crystal. Here, we show that scanning tunneling microscopy (STM) measurements on the prototypical transition metal dichalcogenide (TMD) semiconductor WSe$_2$ can be used to unambiguously fix the location of the Wannier center of the valence band. Using site-specific substitutional doping, we first determine the position of the atomic sites within STM images, establishing that the maximum electronic density of states at the $K$-point lies between the atoms. In contrast, the maximum density of states at the $Γ$ point is at the atomic sites. This signifies that WSe$_2$ is a topologically obstructed atomic insulator, which cannot be adiabatically transformed to the trivial atomic insulator limit.
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Submitted 3 December, 2024;
originally announced December 2024.
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Optical Band Engineering of Monolayer WSe2 in a Scanning Tunneling Microscope
Authors:
Xuehao Wu,
Thomas P. Darlington,
Madisen A. Holbrook,
Emanuil S. Yanev,
Luke N. Holtzman,
Xiaodong Xu,
James C. Hone,
D. N. Basov,
P. James Schuck,
Abhay N. Pasupathy
Abstract:
Intense electromagnetic fields can result in dramatic changes in the electronic properties of solids. These changes are commonly studied using optical probes of the modified electronic structure. Here we use optical-scanning tunneling microscopy (optical-STM) equipped with near-field continuous wave (CW) laser excitation to directly measure the electronic structure of light-dressed states in a mon…
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Intense electromagnetic fields can result in dramatic changes in the electronic properties of solids. These changes are commonly studied using optical probes of the modified electronic structure. Here we use optical-scanning tunneling microscopy (optical-STM) equipped with near-field continuous wave (CW) laser excitation to directly measure the electronic structure of light-dressed states in a monolayer transition metal dichalcogenide (TMD) semiconductor, WSe2. We find that the effective tunneling gap and tunneling density of states are strongly influenced by the intensity of the electromagnetic field when the applied field is resonant with the bandgap of the semiconductor. Our findings indicate that CW laser excitation can be used to generate light-dressed electronic states of quantum materials when confined strongly to the nanoscale.
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Submitted 1 November, 2024;
originally announced November 2024.
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Moiré exciton polaron engineering via twisted hBN
Authors:
Minhyun Cho,
Biswajit Datta,
Kwanghee Han,
Saroj B. Chand,
Pratap Chandra Adak,
Sichao Yu,
Fengping Li,
Kenji Watanabe,
Takashi Taniguchi,
James Hone,
Jeil Jung,
Gabriele Grosso,
Young Duck Kim,
Vinod M. Menon
Abstract:
Twisted hexagonal boron nitride (thBN) exhibits emergent ferroelectricity due to the formation of moiré superlattices with alternating AB and BA domains. These domains possess electric dipoles, leading to a periodic electrostatic potential that can be imprinted onto other 2D materials placed in its proximity. Here we demonstrate the remote imprinting of moiré patterns from twisted hexagonal boron…
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Twisted hexagonal boron nitride (thBN) exhibits emergent ferroelectricity due to the formation of moiré superlattices with alternating AB and BA domains. These domains possess electric dipoles, leading to a periodic electrostatic potential that can be imprinted onto other 2D materials placed in its proximity. Here we demonstrate the remote imprinting of moiré patterns from twisted hexagonal boron nitride (thBN) onto monolayer MoSe2 and investigate the resulting changes in the exciton properties. We confirm the imprinting of moiré patterns on monolayer MoSe2 via proximity using Kelvin probe force microscopy (KPFM) and hyperspectral photoluminescence (PL) mapping. By developing a technique to create large ferroelectric domain sizes ranging from 1 μm to 8.7 μm, we achieve unprecedented potential modulation of 387 +- 52 meV. We observe the formation of exciton polarons due to charge redistribution caused by the antiferroelectric moiré domains and investigate the optical property changes induced by the moiré pattern in monolayer MoSe2 by varying the moiré pattern size down to 110 nm. Our findings highlight the potential of twisted hBN as a platform for controlling the optical and electronic properties of 2D materials for optoelectronic and valleytronic applications.
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Submitted 11 September, 2024;
originally announced September 2024.
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Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides
Authors:
Yi-Hsun Chen,
Ping-Yuan Lo,
Kyle W. Boschen,
Chih-En Hsu,
Yung-Ning Hsu,
Luke N. Holtzman,
Guan-Hao Peng,
Chun-Jui Huang,
Madisen Holbrook,
Wei-Hua Wang,
Katayun Barmak,
James Hone,
Pawel Hawrylak,
Hung-Chung Hsueh,
Jeffrey A. Davis,
Shun-Jen Cheng,
Michael S. Fuhrer,
Shao-Yu Chen
Abstract:
In this work, we report a pronounced light upconversion in few-layer transition metal dichalcogenides. Our joint theory-experiment study attributes the upconversion photoluminescence to a resonant exciton-exciton annihilation involving a pair of dark excitons with opposite momenta, followed by the spontaneous emission of upconverted bright excitons, which can have a high upconversion efficiency. A…
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In this work, we report a pronounced light upconversion in few-layer transition metal dichalcogenides. Our joint theory-experiment study attributes the upconversion photoluminescence to a resonant exciton-exciton annihilation involving a pair of dark excitons with opposite momenta, followed by the spontaneous emission of upconverted bright excitons, which can have a high upconversion efficiency. Additionally, the upconversion photoluminescence is generic in MoS2, MoSe2, WS2, and WSe2, showing a high tuneability from green to ultraviolet light.
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Submitted 10 March, 2025; v1 submitted 5 September, 2024;
originally announced September 2024.
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Dynamical Control of Excitons in Atomically Thin Semiconductors
Authors:
Eric L. Peterson,
Trond I. Andersen,
Giovanni Scuri,
Andrew Y. Joe,
Andrés M. Mier Valdivia,
Xiaoling Liu,
Alexander A. Zibrov,
Bumho Kim,
Takashi Taniguchi,
Kenji Watanabe,
James Hone,
Valentin Walther,
Hongkun Park,
Philip Kim,
Mikhail D. Lukin
Abstract:
Excitons in transition metal dichalcogenides (TMDs) have emerged as a promising platform for novel applications ranging from optoelectronic devices to quantum optics and solid state quantum simulators. While much progress has been made towards characterizing and controlling excitons in TMDs, manipulating their properties during the course of their lifetime - a key requirement for many optoelectron…
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Excitons in transition metal dichalcogenides (TMDs) have emerged as a promising platform for novel applications ranging from optoelectronic devices to quantum optics and solid state quantum simulators. While much progress has been made towards characterizing and controlling excitons in TMDs, manipulating their properties during the course of their lifetime - a key requirement for many optoelectronic device and information processing modalities - remains an outstanding challenge. Here we combine long-lived interlayer excitons in angle-aligned MoSe$_2$/WSe$_2$ heterostructures with fast electrical control to realize dynamical control schemes, in which exciton properties are not predetermined at the time of excitation but can be dynamically manipulated during their lifetime. Leveraging the out-of-plane exciton dipole moment, we use electric fields to demonstrate dynamical control over the exciton emission wavelength. Moreover, employing a patterned gate geometry, we demonstrate rapid local sample doping and toggling of the radiative decay rate through exciton-charge interactions during the exciton lifetime. Spatially mapping the exciton response reveals charge redistribution, offering a novel probe of electronic transport in twisted TMD heterostructures. Our results establish the feasibility of dynamical exciton control schemes, unlocking new directions for exciton-based information processing and optoelectronic devices, and the realization of excitonic phenomena in TMDs.
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Submitted 17 July, 2024; v1 submitted 15 July, 2024;
originally announced July 2024.
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Measuring kinetic inductance and superfluid stiffness of two-dimensional superconductors using high-quality transmission-line resonators
Authors:
Mary Kreidel,
Xuanjing Chu,
Jesse Balgley,
Abhinandan Antony,
Nishchhal Verma,
Julian Ingham,
Leonardo Ranzani,
Raquel Queiroz,
Robert M. Westervelt,
James Hone,
Kin Chung Fong
Abstract:
The discovery of van der Waals superconductors in recent years has generated a lot of excitement for their potentially novel pairing mechanisms. However, their typical atomic-scale thickness and micrometer-scale lateral dimensions impose severe challenges to investigations of pairing symmetry by conventional methods. In this report we demonstrate a new technique that employs high-quality-factor su…
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The discovery of van der Waals superconductors in recent years has generated a lot of excitement for their potentially novel pairing mechanisms. However, their typical atomic-scale thickness and micrometer-scale lateral dimensions impose severe challenges to investigations of pairing symmetry by conventional methods. In this report we demonstrate a new technique that employs high-quality-factor superconducting resonators to measure the kinetic inductance -- up to a part per million -- and loss of a van der Waals superconductor. We analyze the equivalent circuit model to extract the kinetic inductance, superfluid stiffness, penetration depth, and ratio of imaginary and real parts of the complex conductivity. We validate the technique by measuring aluminum and finding excellent agreement in both the zero-temperature superconducting gap as well as the complex conductivity data when compared with BCS theory. We then demonstrate the utility of the technique by measuring the kinetic inductance of multi-layered niobium diselenide and discuss the limits to the accuracy of our technique when the transition temperature of the sample, NbSe$_2$ at 7.06 K, approaches our Nb probe resonator at 8.59 K. Our method will be useful for practitioners in the growing fields of superconducting physics, materials science, and quantum sensing, as a means of characterizing superconducting circuit components and studying pairing mechanisms of the novel superconducting states which arise in layered 2D materials and heterostructures.
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Submitted 17 October, 2024; v1 submitted 13 July, 2024;
originally announced July 2024.
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Quantum Noise Spectroscopy of Criticality in an Atomically Thin Magnet
Authors:
Mark E. Ziffer,
Francisco Machado,
Benedikt Ursprung,
Artur Lozovoi,
Aya Batoul Tazi,
Zhiyang Yuan,
Michael E. Ziebel,
Tom Delord,
Nanyu Zeng,
Evan Telford,
Daniel G. Chica,
Dane W. deQuilettes,
Xiaoyang Zhu,
James C. Hone,
Kenneth L. Shepard,
Xavier Roy,
Nathalie P. de Leon,
Emily J. Davis,
Shubhayu Chatterjee,
Carlos A. Meriles,
Jonathan S. Owen,
P. James Schuck,
Abhay N. Pasupathy
Abstract:
Dynamic critical fluctuations in magnetic materials encode important information about magnetic ordering in the associated critical exponents. Using nitrogen-vacancy centers in diamond, we implement $T_2$ (spin-decoherence) noise magnetometry to study critical dynamics in a 2D Van der Waals magnet CrSBr. By analyzing NV decoherence on time scales approaching the characteristic correlation time…
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Dynamic critical fluctuations in magnetic materials encode important information about magnetic ordering in the associated critical exponents. Using nitrogen-vacancy centers in diamond, we implement $T_2$ (spin-decoherence) noise magnetometry to study critical dynamics in a 2D Van der Waals magnet CrSBr. By analyzing NV decoherence on time scales approaching the characteristic correlation time $τ_c$ of critical fluctuations, we extract the critical exponent $ν$ for the correlation length. Our result deviates from the Ising prediction and highlights the role of long-range dipolar interactions in 2D CrSBr. Furthermore, analyzing the divergence of the correlation length suggests the possibility of 2D-XY criticality in CrSBr in a temperature window near $T_C$ where static magnetic domains are absent. Our work provides a first demonstration of $T_2$ noise magnetometry to quantitatively analyze critical scaling behavior in 2D materials.
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Submitted 15 August, 2024; v1 submitted 8 July, 2024;
originally announced July 2024.
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Time-Domain Signatures of Distinct Correlated Insulators in a Moiré Superlattice
Authors:
Eric A. Arsenault,
Yiliu Li,
Birui Yang,
Takashi Taniguchi,
Kenji Watanabe,
James C. Hone,
Cory R. Dean,
Xiaodong Xu,
X. -Y. Zhu
Abstract:
Among expanding discoveries of quantum phases in moiré superlattices, correlated insulators stand out as both the most stable and most commonly observed. Despite the central importance of these states in moiré physics, little is known about their underlying nature. Here, we use pump-probe spectroscopy to show distinct time-domain signatures of correlated insulators at fillings of one (v = -1) and…
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Among expanding discoveries of quantum phases in moiré superlattices, correlated insulators stand out as both the most stable and most commonly observed. Despite the central importance of these states in moiré physics, little is known about their underlying nature. Here, we use pump-probe spectroscopy to show distinct time-domain signatures of correlated insulators at fillings of one (v = -1) and two (v = -2) holes per moiré unit cell in the angle-aligned WSe2/WS2 system. Following photo-doping, we find that the disordering time of the v = -1 state is independent of excitation density (n_ex), as expected from the characteristic phonon response time associated with a polaronic state. In contrast, the disordering time of the v = -2 state scales with (n_ex)^-0.5, in agreement with plasmonic screening from free holons and doublons. These states display disparate reordering behavior dominated either by first order (v = -1) or second order (v = -2) recombination, suggesting the presence of Hubbard excitons and free carrier-like holons/doublons, respectively. Our work delineates the roles of electron-phonon (e-ph) versus electron-electron (e-e) interactions in correlated insulators on the moiré landscape and establishes non-equilibrium responses as mechanistic signatures for distinguishing and discovering quantum phases.
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Submitted 21 June, 2024;
originally announced June 2024.
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Superconductivity in twisted bilayer WSe$_2$
Authors:
Yinjie Guo,
Jordan Pack,
Joshua Swann,
Luke Holtzman,
Matthew Cothrine,
Kenji Watanabe,
Takashi Taniguchi,
David Mandrus,
Katayun Barmak,
James Hone,
Andrew J. Millis,
Abhay N. Pasupathy,
Cory R. Dean
Abstract:
The discovery of superconductivity in twisted bilayer and twisted trilayer graphene has generated tremendous interest. The key feature of these systems is an interplay between interlayer coupling and a moiré superlattice that gives rise to low-energy flat bands with strong correlations. Flat bands can also be induced by moiré patterns in lattice-mismatched and or twisted heterostructures of other…
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The discovery of superconductivity in twisted bilayer and twisted trilayer graphene has generated tremendous interest. The key feature of these systems is an interplay between interlayer coupling and a moiré superlattice that gives rise to low-energy flat bands with strong correlations. Flat bands can also be induced by moiré patterns in lattice-mismatched and or twisted heterostructures of other two-dimensional materials such as transition metal dichalcogenides (TMDs). Although a wide range of correlated phenomenon have indeed been observed in the moiré TMDs, robust demonstration of superconductivity has remained absent. Here we report superconductivity in 5 degree twisted bilayer WSe$_2$ (tWSe$_2$) with a maximum critical temperature of 426 mK. The superconducting state appears in a limited region of displacement field and density that is adjacent to a metallic state with Fermi surface reconstruction believed to arise from antiferromagnetic order. A sharp boundary is observed between the superconducting and magnetic phases at low temperature, reminiscent of spin-fluctuation mediated superconductivity. Our results establish that moiré flat-band superconductivity extends beyond graphene structures. Material properties that are absent in graphene but intrinsic among the TMDs such as a native band gap, large spin-orbit coupling, spin-valley locking, and magnetism offer the possibility to access a broader superconducting parameter space than graphene-only structures.
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Submitted 5 June, 2024;
originally announced June 2024.
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Stoner instabilities and Ising excitonic states in twisted transition metal dichalcogenides
Authors:
Augusto Ghiotto,
LingNan Wei,
Larry Song,
Jiawei Zang,
Aya Batoul Tazi,
Daniel Ostrom,
Kenji Watanabe,
Takashi Taniguchi,
James C. Hone,
Daniel A. Rhodes,
Andrew J. Millis,
Cory R. Dean,
Lei Wang,
Abhay N. Pasupathy
Abstract:
Moiré transition metal dichalcogenide (TMD) systems provide a tunable platform for studying electron-correlation driven quantum phases. Such phases have so far been found at rational fillings of the moiré superlattice, and it is believed that lattice commensurability plays a key role in their stability. In this work, we show via magnetotransport measurements on twisted WSe2 that new correlated ele…
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Moiré transition metal dichalcogenide (TMD) systems provide a tunable platform for studying electron-correlation driven quantum phases. Such phases have so far been found at rational fillings of the moiré superlattice, and it is believed that lattice commensurability plays a key role in their stability. In this work, we show via magnetotransport measurements on twisted WSe2 that new correlated electronic phases can exist away from commensurability. The first phase is an antiferromagnetic metal that is driven by proximity to the van Hove singularity. The second is a re-entrant magnetic field-driven insulator. This insulator is formed from a small and equal density of electrons and holes with opposite spin projections - an Ising excitonic insulator.
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Submitted 27 May, 2024;
originally announced May 2024.
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Twisted nonlinear optics in monolayer van der Waals crystals
Authors:
Tenzin Norden,
Luis M. Martinez,
Nehan Tarefder,
Kevin W. C. Kwock,
Luke M. McClintock,
Nicholas Olsen,
Luke N. Holtzman,
Xiaoyang Zhu,
James C. Hone,
Jinkyoung Yoo,
Jian-Xin Zhu,
P. James Schuck,
Antoinette J. Taylor,
Rohit P. Prasankumar,
Wilton J. M. Kort-Kamp,
Prashant Padmanabhan
Abstract:
In addition to a plethora of emergent phenomena, the spatial topology of optical vortices enables an array of applications spanning communications to quantum photonics. Nonlinear optics is essential in this context, providing access to an infinitely large set of quantum states associated with the orbital angular momentum of light. Nevertheless, the realization of such processes have failed to keep…
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In addition to a plethora of emergent phenomena, the spatial topology of optical vortices enables an array of applications spanning communications to quantum photonics. Nonlinear optics is essential in this context, providing access to an infinitely large set of quantum states associated with the orbital angular momentum of light. Nevertheless, the realization of such processes have failed to keep pace with the ever-growing need to shrink the fundamental length-scale of photonic technologies to the nanometer regime6. Here, we push the boundaries of vortex nonlinear optics to the ultimate limits of material dimensionality. By exploiting second and third-order frequency-mixing processes in semiconducting monolayers, we demonstrate the independent manipulation of the wavelength, orbital angular momentum, and spatial distribution of vortex light-fields. Due to the atomically-thin nature of the host quantum material, this control spans a broad spectral bandwidth in a highly-integrable platform, unconstrained by the traditional limits of bulk nonlinear optical materials. Our work heralds a new avenue for ultra-compact and scalable hybrid nanotechnologies empowered by twisted nonlinear light-matter interactions in van der Waals quantum nanomaterials.
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Submitted 27 April, 2024; v1 submitted 22 April, 2024;
originally announced April 2024.
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Coherent Modulation of Two-Dimensional Moiré States with On-Chip THz Waves
Authors:
Yiliu Li,
Eric A. Arsenault,
Birui Yang,
Xi Wang,
Heonjoon Park,
Yinjie Guo,
Takashi Taniguchi,
Kenji Watanabe,
Daniel Gamelin,
James C. Hone,
Cory R. Dean,
Sebastian F. Maehrlein,
Xiaodong Xu,
Xiaoyang Zhu
Abstract:
Van der Waals (vdW) structures of two-dimensional materials host a broad range of physical phenomena. New opportunities arise if different functional layers may be remotely modulated or coupled in a device structure. Here we demonstrate the in-situ coherent modulation of moiré excitons and correlated Mott insulators in transition metal dichalcogenide (TMD) homo- or hetero-bilayers with on-chip ter…
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Van der Waals (vdW) structures of two-dimensional materials host a broad range of physical phenomena. New opportunities arise if different functional layers may be remotely modulated or coupled in a device structure. Here we demonstrate the in-situ coherent modulation of moiré excitons and correlated Mott insulators in transition metal dichalcogenide (TMD) homo- or hetero-bilayers with on-chip terahertz (THz) waves. Using common dual-gated device structures, each consisting of a TMD moiré bilayer sandwiched between two few-layer graphene (fl-Gr) gates with hexagonal boron nitride (h-BN) spacers, we launch coherent phonon wavepackets at ~0.4-1 THz from the fl-Gr gates by femtosecond laser excitation. The waves travel through the h-BN spacer, arrive at the TMD bilayer with precise timing, and coherently modulate the moiré excitons or the Mott states. These results demonstrate that the fl-Gr gates, often used for electrical control of the material properties, can serve as effective on-chip opto-elastic transducers to generate THz waves for the coherent control and vibrational entanglement of functional layers in commonly used moiré devices.
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Submitted 20 March, 2024;
originally announced March 2024.
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Hybrid moiré excitons and trions in twisted MoTe$_2$-MoSe$_2$ heterobilayers
Authors:
Shen Zhao,
Xin Huang,
Roland Gillen,
Zhijie Li,
Song Liu,
Kenji Watanabe,
Takashi Taniguchi,
Janina Maultzsch,
James Hone,
Alexander Högele,
Anvar S. Baimuratov
Abstract:
We report experimental and theoretical studies of MoTe$_2$-MoSe$_2$ heterobilayers with rigid moiré superlattices controlled by the twist angle. Using an effective continuum model that combines resonant interlayer electron tunneling with stacking-dependent moiré potentials, we identify the nature of moiré excitons and the dependence of their energies, oscillator strengths and Landé $g$-factors on…
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We report experimental and theoretical studies of MoTe$_2$-MoSe$_2$ heterobilayers with rigid moiré superlattices controlled by the twist angle. Using an effective continuum model that combines resonant interlayer electron tunneling with stacking-dependent moiré potentials, we identify the nature of moiré excitons and the dependence of their energies, oscillator strengths and Landé $g$-factors on the twist angle. Within the same framework, we interpret distinct signatures of bound complexes among electrons and moiré excitons in nearly collinear heterostacks. Our work provides fundamental understanding of hybrid moiré excitons and trions in MoTe$_2$-MoSe$_2$ heterobilayers, and establishes the material system as a prime candidate for optical studies of correlated phenomena in moiré lattices.
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Submitted 11 April, 2024; v1 submitted 6 February, 2024;
originally announced February 2024.
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Anomalous Landau level gaps near magnetic transitions in monolayer WSe$_2$
Authors:
Benjamin A. Foutty,
Vladimir Calvera,
Zhaoyu Han,
Carlos R. Kometter,
Song Liu,
Kenji Watanabe,
Takashi Taniguchi,
James C. Hone,
Steven A. Kivelson,
Benjamin E. Feldman
Abstract:
First-order phase transitions produce abrupt changes to the character of both ground and excited electronic states. Here we conduct electronic compressibility measurements to map the spin phase diagram and Landau level (LL) energies of monolayer WSe$_2$ in a magnetic field. We resolve a sequence of first-order phase transitions between completely spin-polarized LLs and states with LLs of both spin…
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First-order phase transitions produce abrupt changes to the character of both ground and excited electronic states. Here we conduct electronic compressibility measurements to map the spin phase diagram and Landau level (LL) energies of monolayer WSe$_2$ in a magnetic field. We resolve a sequence of first-order phase transitions between completely spin-polarized LLs and states with LLs of both spins. Unexpectedly, the LL gaps are roughly constant over a wide range of magnetic fields below the transitions, which we show reflects a preference for opposite spin excitations of the spin-polarized ground state. These transitions also extend into compressible regimes, with a sawtooth boundary between full and partial spin polarization. We link these observations to the important influence of LL filling on the exchange energy beyond a smooth density-dependent contribution. Our results show that WSe$_2$ realizes a unique hierarchy of energy scales where such effects induce re-entrant magnetic phase transitions tuned by density and magnetic field.
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Submitted 2 January, 2024;
originally announced January 2024.
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Detecting Atomic Scale Surface Defects in STM of TMDs with Ensemble Deep Learning
Authors:
Darian Smalley,
Stephanie D. Lough,
Luke Holtzman,
Kaikui Xu,
Madisen Holbrook,
Matthew R. Rosenberger,
J. C. Hone,
Katayun Barmak,
Masahiro Ishigami
Abstract:
Atomic-scale defect detection is shown in scanning tunneling microscopy images of single crystal WSe2 using an ensemble of U-Net-like convolutional neural networks. Standard deep learning test metrics indicated good detection performance with an average F1 score of 0.66 and demonstrated ensemble generalization to C-AFM images of WSe2 and STM images of MoSe2. Defect coordinates were automatically e…
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Atomic-scale defect detection is shown in scanning tunneling microscopy images of single crystal WSe2 using an ensemble of U-Net-like convolutional neural networks. Standard deep learning test metrics indicated good detection performance with an average F1 score of 0.66 and demonstrated ensemble generalization to C-AFM images of WSe2 and STM images of MoSe2. Defect coordinates were automatically extracted from defect detections maps showing that STM image analysis enhanced by machine learning can be used to dramatically increase sample characterization throughput.
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Submitted 8 December, 2023;
originally announced December 2023.
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Controlled Interlayer Exciton Ionization in an Electrostatic Trap in Atomically Thin Heterostructures
Authors:
Andrew Y. Joe,
Andrés M. Mier Valdivia,
Luis A. Jauregui,
Kateryna Pistunova,
Dapeng Ding,
You Zhou,
Giovanni Scuri,
Kristiaan De Greve,
Andrey Sushko,
Bumho Kim,
Takashi Taniguchi,
Kenji Watanabe,
James C. Hone,
Mikhail D. Lukin,
Hongkun Park,
Philip Kim
Abstract:
Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrost…
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Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrostatic gates to trap IEs and control their density. By electrically modulating the IE Stark shift, electron-hole pair concentrations above $2\times10^{12}$ cm$^{-2}$ can be achieved. At this high IE density, we observe an exponentially increasing linewidth broadening indicative of an IE ionization transition, independent of the trap depth. This runaway threshold remains constant at low temperatures, but increases above 20 K, consistent with the quantum dissociation of a degenerate IE gas. Our demonstration of the IE ionization in a tunable electrostatic trap represents an important step towards the realization of dipolar exciton condensates in solid-state optoelectronic devices.
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Submitted 11 June, 2024; v1 submitted 21 November, 2023;
originally announced November 2023.
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Electronic interactions in Dirac fluids visualized by nano-terahertz spacetime interference of electron-photon quasiparticles
Authors:
Suheng Xu,
Yutao Li,
Rocco A. Vitalone,
Ran Jing,
Aaron J. Sternbach,
Shuai Zhang,
Julian Ingham,
Milan Delor,
James. W. McIver,
Matthew Yankowitz,
Raquel Queiroz,
Andrew J. Millis,
Michael M. Fogler,
Cory R. Dean,
Abhay N. Pasupathy,
James Hone,
Mengkun Liu,
D. N. Basov
Abstract:
Ultraclean graphene at charge neutrality hosts a quantum critical Dirac fluid of interacting electrons and holes. Interactions profoundly affect the charge dynamics of graphene, which is encoded in the properties of its electron-photon collective modes: surface plasmon polaritons (SPPs). Here we show that polaritonic interference patterns are particularly well suited to unveil the interactions in…
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Ultraclean graphene at charge neutrality hosts a quantum critical Dirac fluid of interacting electrons and holes. Interactions profoundly affect the charge dynamics of graphene, which is encoded in the properties of its electron-photon collective modes: surface plasmon polaritons (SPPs). Here we show that polaritonic interference patterns are particularly well suited to unveil the interactions in Dirac fluids by tracking polaritonic interference in time at temporal scales commensurate with the electronic scattering. Spacetime SPP interference patterns recorded in tera-hertz (THz) frequency range provided unobstructed readouts of the group velocity and lifetime of polariton that can be directly mapped onto the electronic spectral weight and the relaxation rate. Our data uncovered prominent departures of the electron dynamics from the predictions of the conventional Fermi-liquid theory. The deviations are particularly strong when the densities of electrons and holes are approximately equal. The proposed spacetime imaging methodology can be broadly applied to probe the electrodynamics of quantum materials.
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Submitted 10 July, 2024; v1 submitted 19 November, 2023;
originally announced November 2023.
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Charge-transfer Contact to a High-Mobility Monolayer Semiconductor
Authors:
Jordan Pack,
Yinjie Guo,
Ziyu Liu,
Bjarke S. Jessen,
Luke Holtzman,
Song Liu,
Matthew Cothrine,
Kenji Watanabe,
Takashi Taniguchi,
David G. Mandrus,
Katayun Barmak,
James Hone,
Cory R. Dean
Abstract:
Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical contacts that perform well at low temperatures and low densities where quantum properties are relevant. Here we present a new device architecture for 2D semiconducto…
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Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical contacts that perform well at low temperatures and low densities where quantum properties are relevant. Here we present a new device architecture for 2D semiconductors that utilizes a charge-transfer layer to achieve large hole doping in the contact region, and implement this technique to measure magneto-transport properties of high-purity monolayer WSe$_2$. We measure a record-high hole mobility of 80,000 cm$^2$/Vs and access channel carrier densities as low as $1.6\times10^{11}$ cm$^{-2}$, an order of magnitude lower than previously achievable. Our ability to realize transparent contact to high-mobility devices at low density enables transport measurement of correlation-driven quantum phases including observation of a low temperature metal-insulator transition in a density and temperature regime where Wigner crystal formation is expected, and observation of the fractional quantum Hall effect under large magnetic fields. The charge transfer contact scheme paves the way for discovery and manipulation of new quantum phenomena in 2D semiconductors and their heterostructures.
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Submitted 30 October, 2023;
originally announced October 2023.
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Transport Study of Charge Carrier Scattering in Monolayer WSe$_2$
Authors:
Andrew Y. Joe,
Kateryna Pistunova,
Kristen Kaasbjerg,
Ke Wang,
Bumho Kim,
Daniel A. Rhodes,
Takashi Taniguchi,
Kenji Watanabe,
James Hone,
Tony Low,
Luis A. Jauregui,
Philip Kim
Abstract:
Employing flux-grown single crystal WSe$_2$, we report charge carrier scattering behaviors measured in $h$-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and temperatures and observe a non-monotonic change of transport mobility $μ$ as a function of hole density in the degenerately doped sample. This unusual behavior can b…
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Employing flux-grown single crystal WSe$_2$, we report charge carrier scattering behaviors measured in $h$-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and temperatures and observe a non-monotonic change of transport mobility $μ$ as a function of hole density in the degenerately doped sample. This unusual behavior can be explained by energy dependent scattering amplitude of strong defects calculated using the T-matrix approximation. Utilizing long mean-free path ($>$500 nm), we demonstrate the high quality of our electronic devices by showing quantized conductance steps from an electrostatically-defined quantum point contact. Our results show the potential for creating ultra-high quality quantum optoelectronic devices based on atomically thin semiconductors.
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Submitted 10 October, 2023; v1 submitted 6 October, 2023;
originally announced October 2023.
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Visualizing moiré ferroelectricity via plasmons and nano-photocurrent in graphene/twisted-WSe2 structures
Authors:
Shuai Zhang,
Yang Liu,
Zhiyuan Sun,
Xinzhong Chen,
Baichang Li,
S. L. Moore,
Song Liu,
Zhiying Wang,
S. E. Rossi,
Ran Jing,
Jordan Fonseca,
Birui Yang,
Yinming Shao,
Chun-Ying Huang,
Taketo Handa,
Lin Xiong,
Matthew Fu,
Tsai-Chun Pan,
Dorri Halbertal,
Xinyi Xu,
Wenjun Zheng,
P. J. Schuck,
A. N. Pasupathy,
C. R. Dean,
Xiaoyang Zhu
, et al. (6 additional authors not shown)
Abstract:
Ferroelectricity, a spontaneous and reversible electric polarization, is found in certain classes of van der Waals (vdW) material heterostructures. The discovery of ferroelectricity in twisted vdW layers provides new opportunities to engineer spatially dependent electric and optical properties associated with the configuration of moiré superlattice domains and the network of domain walls. Here, we…
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Ferroelectricity, a spontaneous and reversible electric polarization, is found in certain classes of van der Waals (vdW) material heterostructures. The discovery of ferroelectricity in twisted vdW layers provides new opportunities to engineer spatially dependent electric and optical properties associated with the configuration of moiré superlattice domains and the network of domain walls. Here, we employ near-field infrared nano-imaging and nano-photocurrent measurements to study ferroelectricity in minimally twisted WSe2. The ferroelectric domains are visualized through the imaging of the plasmonic response in a graphene monolayer adjacent to the moiré WSe2 bilayers. Specifically, we find that the ferroelectric polarization in moiré domains is imprinted on the plasmonic response of the graphene. Complementary nano-photocurrent measurements demonstrate that the optoelectronic properties of graphene are also modulated by the proximal ferroelectric domains. Our approach represents an alternative strategy for studying moiré ferroelectricity at native length scales and opens promising prospects for (opto)electronic devices.
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Submitted 12 September, 2023;
originally announced September 2023.
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Spin-selective magneto-conductivity in WSe$_2$
Authors:
En-Min Shih,
Qianhui Shi,
Daniel Rhodes,
Bumho Kim,
Kenji Watanabe,
Takashi Taniguchi,
Kun Yang,
James Hone,
Cory R. Dean
Abstract:
Material systems that exhibit tunable spin-selective conductivity are key components of spintronic technologies. Here we demonstrate a novel type of spin-selective transport, based on the unusual Landau level (LL) sequence observed in bilayer WSe$_2$ under large applied magnetic fields. We find that the conductivity depends strongly on the relative iso-spin ordering between conducting electrons in…
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Material systems that exhibit tunable spin-selective conductivity are key components of spintronic technologies. Here we demonstrate a novel type of spin-selective transport, based on the unusual Landau level (LL) sequence observed in bilayer WSe$_2$ under large applied magnetic fields. We find that the conductivity depends strongly on the relative iso-spin ordering between conducting electrons in a partially filled LL and the localized electrons of lower energy filled LLs, with conductivity observed to be almost completely suppressed when the spin-ratio and field-tuned Coulomb energy exceed a critical threshold. Switching between "on/off" states is achievable through either modulation of the external magnetic or electric fields, with many-body interaction driving a collective switching mechanism. In contrast to magnetoresistive heterostructures, this system achieves electrically tunable spin filtering within a single material, driven by interaction between free and localized spins residing in energy-separated spin/valley polarized bands. Similar spin-selective conductivity may be realizable in multi-flat band systems at zero magnetic field.
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Submitted 1 July, 2023;
originally announced July 2023.
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Evidence for a Superfluid-to-solid Transition of Bilayer Excitons
Authors:
Yihang Zeng,
Q. Shi,
A. Okounkova,
Dihao Sun,
K. Watanabe,
T. Taniguchi,
J. Hone,
C. R. Dean,
J. I. A. Li
Abstract:
The low-temperature phase diagram of a Bosonic system is predicted to contain an exotic quantum phase, called a supersolid, that is defined by broken translational symmetry and off-diagonal long-range order. This unique combination of properties enables a seemingly paradoxical scenario where a bosonic solid exhibits dissipationless mass flow. However, despite decades of extensive efforts, experime…
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The low-temperature phase diagram of a Bosonic system is predicted to contain an exotic quantum phase, called a supersolid, that is defined by broken translational symmetry and off-diagonal long-range order. This unique combination of properties enables a seemingly paradoxical scenario where a bosonic solid exhibits dissipationless mass flow. However, despite decades of extensive efforts, experimental realization of such a supersolid phase remains elusive. In this work we report experimental observation of a superfluid-to-insulating transition in the bosonic system of spatially indirect excitons in double layer graphene. Utilizing a variety of transport methods to characterize the superfluid-insulator phase boundary as a function of both density and temperature suggests the insulator to be a solid phase driven by repulsive dipole-dipole interactions in the dilute limit. The exciton solid exhibits a unique melting transition, with the high-temperature phase recovering a hallmark transport signature of off-diagonal long-range order, perfect Coulomb drag. The reentrant superfluid-like behaviour could indicate the low temperature solid also corresponds to a quantum coherent phase.
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Submitted 29 June, 2023;
originally announced June 2023.
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Spontaneous Exciton Dissociation in Transition Metal Dichalcogenide Monolayers
Authors:
Taketo Handa,
Madisen A. Holbrook,
Nicholas Olsen,
Luke N. Holtzman,
Lucas Huber,
Hai I. Wang,
Mischa Bonn,
Katayun Barmak,
James C. Hone,
Abhay N. Pasupathy,
X. -Y. Zhu
Abstract:
Since the seminal work on MoS2 monolayers, photoexcitation in atomically-thin transition metal dichalcogenides (TMDCs) has been assumed to result in excitons with large binding energies (~ 200-600 meV). Because the exciton binding energies are order-of-magnitude larger than thermal energy at room temperature, it is puzzling that photocurrent and photovoltage generation have been observed in TMDC-b…
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Since the seminal work on MoS2 monolayers, photoexcitation in atomically-thin transition metal dichalcogenides (TMDCs) has been assumed to result in excitons with large binding energies (~ 200-600 meV). Because the exciton binding energies are order-of-magnitude larger than thermal energy at room temperature, it is puzzling that photocurrent and photovoltage generation have been observed in TMDC-based devices, even in monolayers with applied electric fields far below the threshold for exciton dissociation. Here, we show that the photoexcitation of TMDC monolayers results in a substantial population of free charges. Performing ultrafast terahertz (THz) spectroscopy on large-area, single crystal WS2, WSe2, and MoSe2 monolayers, we find that ~10% of excitons spontaneously dissociate into charge carriers with lifetimes exceeding 0.2 ns. Scanning tunnelling microscopy reveals that photo-carrier generation is intimately related to mid-gap defect states, likely via trap-mediated Auger scattering. Only in state-of-the-art quality monolayers14, with mid-gap trap densities as low as 10^9 cm^-2, does intrinsic exciton physics start to dominate the THz response. Our findings reveal that excitons or excitonic complexes are only the predominant quasiparticles in photo-excited TMDC monolayers at the limit of sufficiently low defect densities.
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Submitted 19 June, 2023;
originally announced June 2023.
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Programmable Nanowrinkle-Induced Room-Temperature Exciton Localization in Monolayer WSe2
Authors:
Emanuil S. Yanev,
Thomas P. Darlington,
Sophia A. Ladyzhets,
Matthew C. Strasbourg,
Song Liu,
Daniel A. Rhodes,
Kobi Hall,
Aditya Sinha,
Nicholas J. Borys,
James C. Hone,
P. James Schuck
Abstract:
Localized states in two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of intense study, driven by potential applications in quantum information science. Despite the rapidly growing knowledge surrounding these emitters, their microscopic nature is still not fully understood, limiting their production and application. Motivated by this challenge, and by recent theor…
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Localized states in two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of intense study, driven by potential applications in quantum information science. Despite the rapidly growing knowledge surrounding these emitters, their microscopic nature is still not fully understood, limiting their production and application. Motivated by this challenge, and by recent theoretical and experimental evidence showing that nanowrinkles generate localized room-temperature emitters, we demonstrate a method to intentionally induce wrinkles with collections of stressors, showing that long-range wrinkle direction and position are controllable with patterned array design. Nano-photoluminescence (nano-PL) imaging combined with detailed strain modeling based on measured wrinkle topography establishes a correlation between wrinkle properties, particularly shear strain, and localized exciton emission. Beyond the array-induced super-wrinkles, nano-PL spatial maps further reveal that the strain environment around individual stressors is heterogeneous due to the presence of fine wrinkles that are less deterministic. Detailed nanoscale hyperspectral images uncover a wide range of low-energy emission peaks originating from these fine wrinkles, and show that the states can be tightly confined to regions < 10 nm, even in ambient conditions. These results establish a promising potential route towards realizing room temperature quantum emission in 2D TMDC systems.
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Submitted 24 May, 2023;
originally announced May 2023.
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Coupled Ferroelectricity and Superconductivity in Bilayer $T_d$-MoTe$_2$
Authors:
Apoorv Jindal,
Amartyajyoti Saha,
Zizhong Li,
Takashi Taniguchi,
Kenji Watanabe,
James C. Hone,
Turan Birol,
Rafael M. Fernandes,
Cory R. Dean,
Abhay N. Pasupathy,
Daniel A. Rhodes
Abstract:
Achieving electrostatic control of quantum phases is at the frontier of condensed matter research. Recent investigations have revealed superconductivity tunable by electrostatic doping in twisted graphene heterostructures and in two-dimensional (2D) semimetals such as WTe$_2$. Some of these systems have a polar crystal structure that gives rise to ferroelectricity, in which the interlayer polariza…
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Achieving electrostatic control of quantum phases is at the frontier of condensed matter research. Recent investigations have revealed superconductivity tunable by electrostatic doping in twisted graphene heterostructures and in two-dimensional (2D) semimetals such as WTe$_2$. Some of these systems have a polar crystal structure that gives rise to ferroelectricity, in which the interlayer polarization exhibits bistability driven by external electric fields. Here we show that bilayer $T_d$-MoTe$_2$ simultaneously exhibits ferroelectric switching and superconductivity. Remarkably, a field-driven, first-order superconductor-to-normal transition is observed at its ferroelectric transition. Bilayer $T_d$-MoTe$_2$ also has a maximum in its superconducting transition temperature ($T_\textrm{c}$) as a function of carrier density and temperature, allowing independent control of the superconducting state as a function of both doping and polarization. We find that the maximum $T_\textrm{c}$ is concomitant with compensated electron and hole carrier densities and vanishes when one of the Fermi pockets disappears with doping. We argue that this unusual polarization-sensitive 2D superconductor is driven by an interband pairing interaction associated with nearly nested electron and hole Fermi pockets.
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Submitted 11 April, 2023;
originally announced April 2023.
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Observation of Wigner cusps in a metallic carbon nanotube
Authors:
B. T. Blue,
R. Tsuchikawa,
A. Ahmadi,
Z. Zhang,
D. Heligman,
S. D. Lough,
J. Hone,
E. R. Mucciolo,
M. Ishigami
Abstract:
Previous gate-dependent conductance measurements of metallic carbon nanotubes have revealed unexplainable conductance suppressions, occurring at two different gate voltages. These were previously attributed to the gate-dependency of contact resistance. Our gate-dependent conductivity measurements on a metallic nanotube with known chirality show that these bimodal conductance suppressions are the m…
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Previous gate-dependent conductance measurements of metallic carbon nanotubes have revealed unexplainable conductance suppressions, occurring at two different gate voltages. These were previously attributed to the gate-dependency of contact resistance. Our gate-dependent conductivity measurements on a metallic nanotube with known chirality show that these bimodal conductance suppressions are the manifestations of Wigner cusps, often seen in atomic and nuclear physics experiments.
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Submitted 30 March, 2023;
originally announced March 2023.
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Two-step flux synthesis of ultrapure transition metal dichalcogenides
Authors:
Song Liu,
Yang Liu,
Luke Nemetz Holtzman,
Baichang Li,
Madisen Holbrook,
Jordan Pack,
Takashi Taniguchi,
Kenji Watanabe,
Cory R. Dean,
Abhay Pasupathy,
Katayun Barmak,
Daniel A. Rhodes,
James Hone
Abstract:
Here, we describe synthesis of TMD crystals using a two-step flux growth method that eliminates a major potential source of contamination. Detailed characterization of TMDs grown by this two-step method reveals charged and isovalent defects with densities an order of magnitude lower than in TMDs grown by a single-step flux technique. Initial temperature-dependent electrical transport measurements…
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Here, we describe synthesis of TMD crystals using a two-step flux growth method that eliminates a major potential source of contamination. Detailed characterization of TMDs grown by this two-step method reveals charged and isovalent defects with densities an order of magnitude lower than in TMDs grown by a single-step flux technique. Initial temperature-dependent electrical transport measurements of monolayer WSe2 yield room-temperature hole mobility above 840 cm2/Vs and low-temperature disorder-limited mobility above 44,000 cm2/Vs. Electrical transport measurements of graphene-WSe2 heterostructures fabricated from the two-step flux grown WSe2 also show superior performance: higher graphene mobility, lower charged impurity density, and well-resolved integer quantum Hall states.
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Submitted 28 March, 2023;
originally announced March 2023.
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In-plane anisotropy in biaxial ReS2 crystals probed by nano-optical imaging of waveguide modes
Authors:
Fabian Mooshammer,
Sanghoon Chae,
Shuai Zhang,
Yinming Shao,
Siyuan Qiu,
Anjaly Rajendran,
Aaron J. Sternbach,
Daniel J. Rizzo,
Xiaoyang Zhu,
P. James Schuck,
James C. Hone,
D. N. Basov
Abstract:
Near-field imaging has emerged as a reliable probe of the dielectric function of van der Waals crystals. In principle, analyzing the propagation patterns of subwavelength waveguide modes (WMs) allows for extraction of the full dielectric tensor. Yet previous studies have mostly been restricted to high-symmetry materials or narrowband probing. Here, we resolve in-plane anisotropic WMs in thin rheni…
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Near-field imaging has emerged as a reliable probe of the dielectric function of van der Waals crystals. In principle, analyzing the propagation patterns of subwavelength waveguide modes (WMs) allows for extraction of the full dielectric tensor. Yet previous studies have mostly been restricted to high-symmetry materials or narrowband probing. Here, we resolve in-plane anisotropic WMs in thin rhenium disulfide (ReS2) crystals across a wide range of near-infrared frequencies. By tracing the evolution of these modes as a function of crystallographic direction, polarization of the electric field and sample thickness, we have determined the anisotropic dielectric tensor including the elusive out-of-plane response. The excitonic absorption at ~1.5 eV manifests itself as a clear backbending feature in the WM dispersion and a reduction of the quality factors as fully supported by numerical calculations. Our results extend the sensitivity of near-field microscopy towards biaxial anisotropy and provide key insights into the optoelectronic properties of ReS2.
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Submitted 6 February, 2023;
originally announced February 2023.
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Domain-dependent surface adhesion in twisted few-layer graphene: Platform for moiré-assisted chemistry
Authors:
Valerie Hsieh,
Dorri Halbertal,
Nathan R. Finney,
Ziyan Zhu,
Eli Gerber,
Michele Pizzochero,
Emine Kucukbenli,
Gabriel R. Schleder,
Mattia Angeli,
Kenji Watanabe,
Takashi Taniguchi,
Eun-Ah Kim,
Efthimios Kaxiras,
James Hone,
Cory R. Dean,
D. N. Basov
Abstract:
Twisted van der Waals multilayers are widely regarded as a rich platform to access novel electronic phases, thanks to the multiple degrees of freedom such as layer thickness and twist angle that allow control of their electronic and chemical properties. Here, we propose that the stacking domains that form naturally due to the relative twist between successive layers act as an additional "knob" for…
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Twisted van der Waals multilayers are widely regarded as a rich platform to access novel electronic phases, thanks to the multiple degrees of freedom such as layer thickness and twist angle that allow control of their electronic and chemical properties. Here, we propose that the stacking domains that form naturally due to the relative twist between successive layers act as an additional "knob" for controlling the behavior of these systems, and report the emergence and engineering of stacking domain-dependent surface chemistry in twisted few-layer graphene. Using mid-infrared near-field optical microscopy and atomic force microscopy, we observe a selective adhesion of metallic nanoparticles and liquid water at the domains with rhombohedral stacking configurations of minimally twisted double bi- and tri-layer graphene. Furthermore, we demonstrate that the manipulation of nanoparticles located at certain stacking domains can locally reconfigure the moiré superlattice in their vicinity at the μm-scale. In addition, we report first-principles simulations of the energetics of adhesion of metal atoms and water molecules on the stacking domains in an attempt to elucidate the origin of the observed selective adhesion. Our findings establish a new approach to controlling moiré-assisted chemistry and nanoengineering.
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Submitted 27 April, 2023; v1 submitted 19 October, 2022;
originally announced October 2022.
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Negative refraction in hyperbolic hetero-bicrystals
Authors:
A. J. Sternbach,
S. L. Moore,
A. Rikhter,
S. Zhang,
R. Jing,
Y. Shao,
B. S. Y. Kim,
S. Xu,
S. Liu,
J. H. Edgar,
A. Rubio,
C. Dean,
J. Hone,
M. M. Fogler,
D. N. Basov
Abstract:
We visualized negative refraction of phonon polaritons, which occurs at the interface between two natural crystals. The polaritons - hybrids of infrared photons and lattice vibrations - form collimated rays that display negative refraction when passing through a planar interface between the two hyperbolic van der Waals materials: molybdenum oxide ($MoO_3$) and isotopically pure hexagonal boron nit…
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We visualized negative refraction of phonon polaritons, which occurs at the interface between two natural crystals. The polaritons - hybrids of infrared photons and lattice vibrations - form collimated rays that display negative refraction when passing through a planar interface between the two hyperbolic van der Waals materials: molybdenum oxide ($MoO_3$) and isotopically pure hexagonal boron nitride ($h^{11}BN$). At a special frequency $ω_0$, these rays can circulate along closed diamond-shaped trajectories. We have shown that polariton eigenmodes display regions of both positive and negative dispersion interrupted by multiple gaps that result from polaritonic level repulsion and strong coupling.
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Submitted 7 July, 2023; v1 submitted 29 September, 2022;
originally announced September 2022.
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Programming moiré patterns in 2D materials by bending
Authors:
Mäelle Kapfer,
Bjarke S. Jessen,
Megan E. Eisele,
Matthew Fu,
Dorte R. Danielsen,
Thomas P. Darlington,
Samuel L. Moore,
Nathan R. Finney,
Ariane Marchese,
Valerie Hsieh,
Paulina Majchrzak,
Zhihao Jiang,
Deepnarayan Biswas,
Pavel Dudin,
José Avila,
Kenji Watanabe,
Takashi Taniguchi,
Søren Ulstrup,
Peter Bøggild,
P. J. Schuck,
Dmitri N. Basov,
James Hone,
Cory R. Dean
Abstract:
Moiré superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moiré pattern is highly sensitive to the interlayer atomic registry, and current assembly techniques suffer from imprecise control of the average twist angle, spatial inhomogeneity in the local twist angle, and distortions due to rando…
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Moiré superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moiré pattern is highly sensitive to the interlayer atomic registry, and current assembly techniques suffer from imprecise control of the average twist angle, spatial inhomogeneity in the local twist angle, and distortions due to random strain. Here, we demonstrate a new way to manipulate the moiré patterns in hetero- and homo-bilayers through in-plane bending of monolayer ribbons, using the tip of an atomic force microscope. This technique achieves continuous variation of twist angles with improved twist-angle homogeneity and reduced random strain, resulting in moiré patterns with highly tunable wavelength and ultra-low disorder. Our results pave the way for detailed studies of ultra-low disorder moiré systems and the realization of precise strain-engineered devices.
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Submitted 21 September, 2022;
originally announced September 2022.
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Ultra Localized Optoelectronic Properties of Nanobubbles in 2D Semiconductors
Authors:
Sara Shabani,
Thomas P. Darlington,
Colin Gordon,
Wenjing Wu,
Emanuil Yanev,
James Hone,
Xiaoyang Zhu,
Cyrus E. Dreyer,
P. James Schuck,
Abhay N. Pasupathy
Abstract:
The optical properties of transition metal dichalcogenides have previously been modified at the nanoscale by using mechanical and electrical nanostructuring. However, a clear experimental picture relating the local electronic structure with emission properties in such structures has so far been lacking. Here, we use a combination of scanning tunneling microscopy (STM) and near-field photoluminesce…
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The optical properties of transition metal dichalcogenides have previously been modified at the nanoscale by using mechanical and electrical nanostructuring. However, a clear experimental picture relating the local electronic structure with emission properties in such structures has so far been lacking. Here, we use a combination of scanning tunneling microscopy (STM) and near-field photoluminescence (nano-PL) to probe the electronic and optical properties of single nano-bubbles in bilayer heterostructures of WSe2 on MoSe2. We show from tunneling spectroscopy that there are electronic states deeply localized in the gap at the edge of such bubbles, which are independent of the presence of chemical defects in the layers. We also show a significant change in the local bandgap on the bubble, with a continuous evolution to the edge of the bubble over a length scale of ~20 nm. Nano-PL measurements observe a continuous redshift of the interlayer exciton on entering the bubble, in agreement with the band to band transitions measured by STM. We use self-consistent Schrödinger-Poisson (SP) simulations to capture the essence of the experimental results and find that strong doping in the bubble region is a key ingredient to achieving the observed localized states, together with mechanical strain.
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Submitted 30 August, 2022;
originally announced August 2022.
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Unconventional Nonlocal Relaxation Dynamics in a Twisted Graphene Moire Superlattice
Authors:
Dorri Halbertal,
Simon Turkel,
Christopher J. Ciccarino,
Jonas Profe,
Nathan Finney,
Valerie Hsieh,
Kenji Watanabe,
Takashi Taniguchi,
James Hone,
Cory Dean,
Prineha Narang,
Abhay N. Pasupathy,
Dante M. Kennes,
D. N. Basov
Abstract:
The electronic and structural properties of atomically thin materials can be controllably tuned by assembling them with an interlayer twist. During this process, constituent layers spontaneously rearrange themselves in search of a lowest energy configuration. Such relaxation phenomena can lead to unexpected and novel material properties. Here, we study twisted double trilayer graphene (TDTG) using…
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The electronic and structural properties of atomically thin materials can be controllably tuned by assembling them with an interlayer twist. During this process, constituent layers spontaneously rearrange themselves in search of a lowest energy configuration. Such relaxation phenomena can lead to unexpected and novel material properties. Here, we study twisted double trilayer graphene (TDTG) using nano-optical and tunneling spectroscopy tools. We reveal a surprising optical and electronic contrast, as well as a stacking energy imbalance emerging between the moiré domains. We attribute this contrast to an unconventional form of lattice relaxation in which an entire graphene layer spontaneously shifts position during fabrication. We analyze the energetics of this transition and demonstrate that it is the result of a non-local relaxation process, in which an energy gain in one domain of the moire lattice is paid for by a relaxation that occurs in the other.
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Submitted 19 January, 2023; v1 submitted 22 August, 2022;
originally announced August 2022.
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Quadrupolar excitons in a tunnel-coupled van der Waals heterotrilayer
Authors:
Weijie Li,
Zach Hadjri,
Jin Zhang,
Luka M. Devenica,
Song Liu,
James Hone,
Kenji Watanabe,
Takashi Taniguchi,
Angel Rubio,
Ajit Srivastava
Abstract:
Strongly bound excitons and many-body interactions between them determine light-matter interactions in van der Waals (vdW) heterostructures of 2D semiconductors. Unlike fundamental particles, quasiparticles in condensed matter, such as excitons, can be tailored to alter their interactions and realize emergent quantum phases. Here, using a WS$_2$/WSe$_2$/WS$_2$ heterotrilayer, we create a quantum s…
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Strongly bound excitons and many-body interactions between them determine light-matter interactions in van der Waals (vdW) heterostructures of 2D semiconductors. Unlike fundamental particles, quasiparticles in condensed matter, such as excitons, can be tailored to alter their interactions and realize emergent quantum phases. Here, using a WS$_2$/WSe$_2$/WS$_2$ heterotrilayer, we create a quantum superposition of oppositely oriented dipolar excitons - a quadrupolar exciton - wherein an electron is layer-hybridized in WS$_2$ layers while the hole localizes in WSe$_2$. In contrast to dipolar excitons, symmetric quadrupolar excitons only redshift in an out-of-plane electric field, consistent with ab initio calculations, regaining dipolar characteristics at higher fields. Electric field tunes the hybridization and allows for lifetime control through modification of the excitonic wavefunction. Lack of density-dependent blue shift of heterotrilayer excitons compared to dipolar excitons is consistent with quadrupolar interactions. Our results present vdW heterotrilayers as a field-tunable platform to engineer light-matter interactions and explore quantum phase transitions between spontaneously ordered many-exciton phases.
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Submitted 10 August, 2022;
originally announced August 2022.
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Evidence for Exciton Crystals in a 2D Semiconductor Heterotrilayer
Authors:
Yusong Bai,
Yiliu Li,
Song Liu,
Yinjie Guo,
Jordan Pack,
Jue Wang,
Cory R. Dean,
James Hone,
X. -Y. Zhu
Abstract:
Two-dimensional (2D) transition metal dichalcogenides (TMDC) and their moiré interfaces have been demonstrated for correlated electron states, including Mott insulators and electron/hole crystals commensurate with moiré superlattices. Here we present spectroscopic evidences for ordered bosons - interlayer exciton crystals in a WSe2/MoSe2/WSe2 trilayer, where the enhanced Coulomb interactions over…
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Two-dimensional (2D) transition metal dichalcogenides (TMDC) and their moiré interfaces have been demonstrated for correlated electron states, including Mott insulators and electron/hole crystals commensurate with moiré superlattices. Here we present spectroscopic evidences for ordered bosons - interlayer exciton crystals in a WSe2/MoSe2/WSe2 trilayer, where the enhanced Coulomb interactions over those in heterobilayers have been predicted to result in exciton ordering. While the dipolar interlayer excitons in the heterobilayer may be ordered by the periodic moiré traps, their mutual repulsion results in de-trapping at exciton density n_ex larger than 10^11 cm^-2 to form mobile exciton gases and further to electron-hole plasmas, both accompanied by broadening in photoluminescence (PL) peaks and large increases in mobility. In contrast, ordered interlayer excitons in the trilayer are characterized by negligible mobility and by sharper PL peaks persisting to n_ex approximately 10^12 cm^-2. We present evidences for the predicted quadrupolar exciton crystal and its transitions to dipolar excitons either with increasing n_ex or by an applied electric field. These ordered interlayer excitons may serve as models for the exploration of quantum phase transitions and quantum coherent phenomena.
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Submitted 3 August, 2023; v1 submitted 19 July, 2022;
originally announced July 2022.
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Atomically imprinted graphene plasmonic cavities
Authors:
Brian S. Y. Kim,
Aaron J. Sternbach,
Min Sup Choi,
Zhiyuan Sun,
Francesco L. Ruta,
Yinming Shao,
Alexander S. McLeod,
Lin Xiong,
Yinan Dong,
Anjaly Rajendran,
Song Liu,
Ankur Nipane,
Sang Hoon Chae,
Amirali Zangiabadi,
Xiaodong Xu,
Andrew J. Millis,
P. James Schuck,
Cory. R. Dean,
James C. Hone,
D. N. Basov
Abstract:
Plasmon polaritons in van der Waals (vdW) materials hold promise for next-generation photonics. The ability to deterministically imprint spatial patterns of high carrier density in cavities and circuitry with nanoscale features underlies future progress in nonlinear nanophotonics and strong light-matter interactions. Here, we demonstrate a general strategy to atomically imprint low-loss graphene p…
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Plasmon polaritons in van der Waals (vdW) materials hold promise for next-generation photonics. The ability to deterministically imprint spatial patterns of high carrier density in cavities and circuitry with nanoscale features underlies future progress in nonlinear nanophotonics and strong light-matter interactions. Here, we demonstrate a general strategy to atomically imprint low-loss graphene plasmonic structures using oxidation-activated charge transfer (OCT). We cover graphene with a monolayer of WSe$_2$, which is subsequently oxidized into high work-function WOx to activate charge transfer. Nano-infrared imaging reveals low-loss plasmon polaritons at the WOx/graphene interface. We insert WSe$_2$ spacers to precisely control the OCT-induced carrier density and achieve a near-intrinsic quality factor of plasmons. Finally, we imprint canonical plasmonic cavities exhibiting laterally abrupt doping profiles with single-digit nanoscale precision via programmable OCT. Specifically, we demonstrate technologically appealing but elusive plasmonic whispering-gallery resonators based on free-standing graphene encapsulated in WOx. Our results open avenues for novel quantum photonic architectures incorporating two-dimensional materials.
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Submitted 25 June, 2022;
originally announced June 2022.
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P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3
Authors:
Yi-Hsun Chen,
Kaijian Xing,
Song Liu,
Luke Holtzman,
Daniel L. Creedon,
Jeffrey C. McCallum,
Kenji Watanabe,
Takashi Taniguchi,
Katayun Barmak,
James Hone,
Alexander R. Hamilton,
Shao-Yu Chen,
Michael S. Fuhrer
Abstract:
1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States 4 Department of Applied Physics and Applied Mathemat…
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1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States 4 Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States 5 School of Physics, the University of Melbourne, Melbourne, VIC 3010, Australia 6 Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 7 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 8 School of Physics, University of New South Wales, 2052 Sydney, Australia 9 Center of Condensed Matter Sciences and Center of Atomic Initiative for New Material, National Taiwan University, Taipei 106, Taiwan 10 Monash Centre for Atomically Thin Materials, Monash University, Clayton, 3800, VIC, Australia
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Submitted 22 June, 2022;
originally announced June 2022.
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Electron spin resonance and collective excitations in magic-angle twisted bilayer graphene
Authors:
Erin Morissette,
Jiang-Xiazi Lin,
Dihao Sun,
Liangji Zhang,
Song Liu,
Daniel Rhodes,
K. Watanabe,
T. Taniguchi,
James Hone,
Johannes Pollanen,
Mathias S. Scheurer,
Michael Lilly,
Andrew Mounce,
J. I. A. Li
Abstract:
In a strongly correlated system, collective excitations contain key information regarding the electronic order of the underlying ground state. An abundance of collective modes in the spin and valley isospin channels of magic-angle graphene moiré bands has been alluded to by a series of recent experiments. However, direct observation of collective excitations has remained elusive due to the lack of…
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In a strongly correlated system, collective excitations contain key information regarding the electronic order of the underlying ground state. An abundance of collective modes in the spin and valley isospin channels of magic-angle graphene moiré bands has been alluded to by a series of recent experiments. However, direct observation of collective excitations has remained elusive due to the lack of a spin probe. In this work, we use a resistively-detected electron spin resonance technique to look for low-energy collective excitations in magic-angle twisted bilayer graphene. We report direct observation of collective modes in the form of microwave-induced resonance near half filling of the moiré flatbands. The frequency-magnetic field dependence of these resonance modes sheds light onto the nature of intervalley spin coupling, allowing us to extract parameters such as intervalley exchange interaction and spin stiffness. Two independent observations testify that the generation and detection of the microwave resonance relies on the strong correlation within the flat moiré energy band. First, the onset of robust resonance response coincides with the spontaneous flavor polarization at half moiré filling, and remains absent in the density range where the underlying Fermi surface is isospin unpolarized. Second, we performed the same resonance measurement on graphene monolayer and bilayer samples, including twisted bilayer with a large twist angle, where flatband physics is absent. We observe no indication of resonance response in these samples across a large range of carrier density, microwave frequency and power. A natural explanation is that the resonance response near the magic angle originates from "Dirac revivals" and the resulting isospin order.
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Submitted 14 July, 2022; v1 submitted 16 June, 2022;
originally announced June 2022.
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Infrared Plasmons Propagate through a Hyperbolic Nodal Metal
Authors:
Yinming Shao,
Aaron J. Sternbach,
Brian S. Y. Kim,
Andrey A. Rikhter,
Xinyi Xu,
Umberto De Giovannini,
Ran Jing,
Sang Hoon Chae,
Zhiyuan Sun,
Seng Huat Lee,
Yanglin Zhu,
Zhiqiang Mao,
J. Hone,
Raquel Queiroz,
A. J. Millis,
P. James Schuck,
A. Rubio,
M. M. Fogler,
D. N. Basov
Abstract:
Metals are canonical plasmonic media at infrared and optical wavelengths, allowing one to guide and manipulate light at the nano-scale. A special form of optical waveguiding is afforded by highly anisotropic crystals revealing the opposite signs of the dielectric functions along orthogonal directions. These media are classified as hyperbolic and include crystalline insulators, semiconductors and a…
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Metals are canonical plasmonic media at infrared and optical wavelengths, allowing one to guide and manipulate light at the nano-scale. A special form of optical waveguiding is afforded by highly anisotropic crystals revealing the opposite signs of the dielectric functions along orthogonal directions. These media are classified as hyperbolic and include crystalline insulators, semiconductors and artificial metamaterials. Layered anisotropic metals are also anticipated to support hyperbolic waveguiding. Yet this behavior remains elusive, primarily because interband losses arrest the propagation of infrared modes. Here, we report on the observation of propagating hyperbolic waves in a prototypical layered nodal-line semimetal ZrSiSe. The observed waveguiding originates from polaritonic hybridization between near-infrared light and nodal-line plasmons. Unique nodal electronic structures simultaneously suppress interband loss and boost the plasmonic response, ultimately enabling the propagation of infrared modes through the bulk of the crystal.
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Submitted 3 June, 2022;
originally announced June 2022.
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Unzipping hBN with ultrashort mid-infrared pulses
Authors:
Cecilia Y. Chen,
Jared S. Ginsberg,
Samuel L. Moore,
M. Mehdi Jadidi,
Rishi Maiti,
Baichang Li,
Sang Hoon Chae,
Anjaly Rajendran,
Gauri N. Patwardhan,
Kenji Watanabe,
Takashi Taniguchi,
James Hone,
D. N. Basov,
Alexander L. Gaeta
Abstract:
Manipulating the nanostructure of materials is critical for numerous applications in electronics, magnetics, and photonics. However, conventional methods such as lithography and laser-writing require cleanroom facilities or leave residue. Here, we describe a new approach to create atomically sharp line defects in hexagonal boron nitride (hBN) at room temperature by direct optical phonon excitation…
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Manipulating the nanostructure of materials is critical for numerous applications in electronics, magnetics, and photonics. However, conventional methods such as lithography and laser-writing require cleanroom facilities or leave residue. Here, we describe a new approach to create atomically sharp line defects in hexagonal boron nitride (hBN) at room temperature by direct optical phonon excitation in the mid-infrared (mid-IR). We term this phenomenon "unzipping" to describe the rapid formation and growth of a <30-nm-wide crack from a point within the laser-driven region. The formation of these features is attributed to large atomic displacements and high local bond strain from driving the crystal at a natural resonance. This process is distinguished by (i) occurring only under resonant phonon excitation, (ii) producing highly sub-wavelength features, and (iii) sensitivity to crystal orientation and pump laser polarization. Its cleanliness, directionality, and sharpness enable applications in in-situ flake cleaving and phonon-wave-coupling via free space optical excitation.
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Submitted 24 May, 2022;
originally announced May 2022.
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Tunable and giant valley-selective Hall effect in gapped bilayer graphene
Authors:
Jianbo Yin,
Cheng Tan,
David Barcons-Ruiz,
Iacopo Torre,
Kenji Watanabe,
Takashi Taniguchi,
Justin C. W. Song,
James Hone,
Frank H. L. Koppens
Abstract:
Berry curvature is analogous to magnetic field but in momentum space and is commonly present in materials with non-trivial quantum geometry. It endows Bloch electrons with transverse anomalous velocities to produce Hall-like currents even in the absence of a magnetic field. We report the direct observation of in situ tunable valley-selective Hall effect (VSHE), where inversion symmetry, and thus t…
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Berry curvature is analogous to magnetic field but in momentum space and is commonly present in materials with non-trivial quantum geometry. It endows Bloch electrons with transverse anomalous velocities to produce Hall-like currents even in the absence of a magnetic field. We report the direct observation of in situ tunable valley-selective Hall effect (VSHE), where inversion symmetry, and thus the geometric phase of electrons, is controllable by an out-of-plane electric field. We use high-quality bilayer graphene with an intrinsic and tunable bandgap, illuminated by circularly polarized mid-infrared light and confirm that the observed Hall voltage arises from an optically-induced valley population. Compared with molybdenum disulfide, we find orders of magnitude larger VSHE, attributed to the inverse scaling of the Berry curvature with bandgap. By monitoring the valley-selective Hall conductivity, we study Berry curvature's evolution with bandgap. This in situ manipulation of VSHE paves the way for topological and quantum geometric opto-electronic devices, such as more robust switches and detectors.
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Submitted 20 April, 2022;
originally announced April 2022.
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Frustrated magnetic interactions in a Wigner-Mott insulator
Authors:
Yanhao Tang,
Kaixiang Su,
Lizhong Li,
Yang Xu,
Song Liu,
Kenji Watanabe,
Takashi Taniguchi,
James Hone,
Chao-Ming Jian,
Cenke Xu,
Kin Fai Mak,
Jie Shan
Abstract:
Two-dimensional semiconductor moiré materials have emerged as a highly controllable platform to simulate and explore quantum condensed matter. Compared to real solids, electrons in semiconductor moiré materials are less strongly attracted to the moiré lattice sites, making the nonlocal contributions to the magnetic interactions as important as the Anderson super-exchange. It provides a unique plat…
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Two-dimensional semiconductor moiré materials have emerged as a highly controllable platform to simulate and explore quantum condensed matter. Compared to real solids, electrons in semiconductor moiré materials are less strongly attracted to the moiré lattice sites, making the nonlocal contributions to the magnetic interactions as important as the Anderson super-exchange. It provides a unique platform to study the effects of competing magnetic interactions. Here, we report the observation of strongly frustrated magnetic interactions in a Wigner-Mott insulating state at 2/3 filling of the moiré lattice in angle-aligned WSe2/WS2 heterobilayers. Magneto-optical measurements show that the net exchange interaction is antiferromagnetic for filling factors below 1 with a strong suppression at 2/3 filling. The suppression is lifted upon screening of the long-range Coulomb interactions and melting of the Wigner-Mott insulator by a nearby metallic gate. The results can be qualitatively captured by a honeycomb-lattice spin model with an antiferromagnetic nearest-neighbor coupling and a ferromagnetic second-neighbor coupling. Our study establishes semiconductor moiré materials as a model system for the lattice-spin physics and frustrated magnetism.
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Submitted 17 April, 2022;
originally announced April 2022.
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Dark-exciton driven energy funneling into dielectric inhomogeneities in two-dimensional semiconductors
Authors:
Haowen Su,
Ding Xu,
Shan-Wen Cheng,
Baichang Li,
Song Liu,
Kenji Watanabe,
Takashi Taniguchi,
Timothy C. Berkelbach,
James Hone,
Milan Delor
Abstract:
The optoelectronic and transport properties of two-dimensional transition metal dichalcogenide semiconductors (2D TMDs) are highly susceptible to external perturbation, enabling precise tailoring of material function through post-synthetic modifications. Here we show that nanoscale inhomogeneities known as nanobubbles can be used for both strain and, less invasively, dielectric tuning of exciton t…
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The optoelectronic and transport properties of two-dimensional transition metal dichalcogenide semiconductors (2D TMDs) are highly susceptible to external perturbation, enabling precise tailoring of material function through post-synthetic modifications. Here we show that nanoscale inhomogeneities known as nanobubbles can be used for both strain and, less invasively, dielectric tuning of exciton transport in bilayer tungsten disulfide (WSe2). We use ultrasensitive spatiotemporally resolved optical scattering microscopy to directly image exciton transport, revealing that dielectric nanobubbles are surprisingly efficient at funneling and trapping excitons at room temperature, even though the energies of the bright excitons are negligibly affected. Our observations suggest that exciton funneling in dielectric inhomogeneities is driven by momentum-indirect (dark) excitons whose energies are more sensitive to dielectric perturbations than bright excitons. These results reveal a new pathway to control exciton transport in 2D semiconductors with exceptional spatial and energetic precision using dielectric engineering of dark state energetic landscapes.
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Submitted 9 February, 2022;
originally announced February 2022.
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Dielectric catastrophe at the Mott and Wigner transitions in a moiré superlattice
Authors:
Yanhao Tang,
Jie Gu,
Song Liu,
Kenji Watanabe,
Takashi Taniguchi,
James C. Hone,
Kin Fai Mak,
Jie Shan
Abstract:
The metal-insulator transition (MIT) driven by electronic correlations is a fundamental and challenging problem in condensed-matter physics. Particularly, whether such a transition can be continuous remains open. The emergence of semiconducting moiré materials with continuously tunable bandwidth provides an ideal platform to study interaction-driven MITs. Although a bandwidth-tuned MIT at fixed fu…
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The metal-insulator transition (MIT) driven by electronic correlations is a fundamental and challenging problem in condensed-matter physics. Particularly, whether such a transition can be continuous remains open. The emergence of semiconducting moiré materials with continuously tunable bandwidth provides an ideal platform to study interaction-driven MITs. Although a bandwidth-tuned MIT at fixed full electron filling of the moiré superlattice has been reported recently, that at fractional filling, which involves translational symmetry breaking of the underlying superlattice, remains elusive. Here, we demonstrate bandwidth-tuned MITs in a MoSe2/WS2 moiré superlattice at both integer and fractional fillings using the exciton sensing technique. The bandwidth is controlled by an out-of-plane electric field. The dielectric response is probed optically with the 2s exciton in a remote WSe2 sensor layer. The exciton spectral weight is negligible for the metallic state, consistent with a large negative dielectric constant. It continuously vanishes when the transition is approached from the insulating side, corresponding to a diverging dielectric constant or a "dielectric catastrophe". Our results support continuous interaction-driven MITs in a two-dimensional triangular lattice and stimulate future explorations of exotic quantum phases, such as quantum spin liquids, in their vicinities.
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Submitted 29 January, 2022;
originally announced January 2022.