Title:Real-Space Imaging of the Band Topology of Transition Metal Dichalcogenides

Abstract:The topological properties of Bloch bands are intimately tied to the structure of their electronic wavefunctions within the unit cell of a crystal. Here, we show that scanning tunneling microscopy (STM) measurements on the prototypical transition metal dichalcogenide (TMD) semiconductor WSe$_2$ can be used to unambiguously fix the location of the Wannier center of the valence band. Using site-specific substitutional doping, we first determine the position of the atomic sites within STM images, establishing that the maximum electronic density of states at the $K$-point lies between the atoms. In contrast, the maximum density of states at the $\Gamma$ point is at the atomic sites. This signifies that WSe$_2$ is a topologically obstructed atomic insulator, which cannot be adiabatically transformed to the trivial atomic insulator limit.