Showing 1–4 of 4 results for author: Heydrich, S

Weak localization and Raman study of anisotropically etched graphene antidots

Authors: Florian Oberhuber, Stefan Blien, Stefanie Heydrich, Fatemeh Yaghobian, Tobias Korn, Christian Schüller, Christoph Strunk, Dieter Weiss, Jonathan Eroms

Abstract: We study a crystallographic etching process of graphene nanostructures where zigzag edges can be prepared selectively. The process involves heating exfoliated single-layer graphene samples with a predefined pattern of antidot arrays in an argon atmosphere at 820 C, which selectively removes carbon atoms located on armchair sites. Atomic force microscopy and scanning electron microscopy cannot reso… ▽ More We study a crystallographic etching process of graphene nanostructures where zigzag edges can be prepared selectively. The process involves heating exfoliated single-layer graphene samples with a predefined pattern of antidot arrays in an argon atmosphere at 820 C, which selectively removes carbon atoms located on armchair sites. Atomic force microscopy and scanning electron microscopy cannot resolve the structure on the atomic scale. However, weak localization and Raman measurements - which both probe intervalley scattering at armchair edges - indicate that zigzag regions are enhanced compared to samples prepared with oxygen based reactive ion etching only. △ Less

Submitted 9 October, 2013; v1 submitted 14 August, 2013; originally announced August 2013.

Comments: 5 pages, 6 figures, few references added in v2

Journal ref: Appl. Phys. Lett. 103, 143111 (2013)

Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes

Authors: G. Plechinger, S. Heydrich, J. Eroms, D. Weiss, Schüller, T. Korn

Abstract: Single- and few-layer MoS2 has recently gained attention as an interesting new material system for opto-electronics. Here, we report on scanning Raman measurements on few-layer MoS2 flakes prepared by exfoliation. We observe a Raman mode corresponding to a rigid shearing oscillation of adjacent layers. This mode appears at very low Raman shifts between 20 and 30 relative wavenumbers. Its position… ▽ More Single- and few-layer MoS2 has recently gained attention as an interesting new material system for opto-electronics. Here, we report on scanning Raman measurements on few-layer MoS2 flakes prepared by exfoliation. We observe a Raman mode corresponding to a rigid shearing oscillation of adjacent layers. This mode appears at very low Raman shifts between 20 and 30 relative wavenumbers. Its position strongly depends on the number of layers, which we independently determine using AFM measurements and investigation of the other characteristic Raman modes. Raman spectroscopy of the shear mode therefore is a useful tool to determine the number of layers for few-layer MoS2 flakes. △ Less

Submitted 24 May, 2012; v1 submitted 9 May, 2012; originally announced May 2012.

Comments: 4 pages, 3 figures, submitted to Applied Phys. Lett

Journal ref: Appl. Phys. Lett. 101, 101906 (2012)

Low-temperature photocarrier dynamics in monolayer MoS2

Authors: T. Korn, S. Heydrich, M. Hirmer, J. Schmutzler, C. Schüller

Abstract: The band structure of MoS$_2$ strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS$_2$. Single-layer MoS$_2$ therefore becomes an efficient emitter of photoluminescence even at room temperature. Here, we report on scanning Raman and on temperature-dependent, as well as time-resolved photoluminescen… ▽ More The band structure of MoS$_2$ strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS$_2$. Single-layer MoS$_2$ therefore becomes an efficient emitter of photoluminescence even at room temperature. Here, we report on scanning Raman and on temperature-dependent, as well as time-resolved photoluminescence measurements on single-layer MoS$_2$ flakes prepared by exfoliation. We observe the emergence of two distinct photoluminescence peaks at low temperatures. The photocarrier recombination at low temperatures occurs on the few-picosecond timescale, but with increasing temperatures, a biexponential photoluminescence decay with a longer-lived component is observed. △ Less

Submitted 17 June, 2011; v1 submitted 15 June, 2011; originally announced June 2011.

Comments: 3 pages, 4 figures

Journal ref: Applied Physics Letters 99, 102109 (2011)

Scanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type doping

Authors: S. Heydrich, M. Hirmer, C. Preis, T. Korn, J. Eroms, D. Weiss, C. Schüller

Abstract: We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths and intensities of the characteristic phonon modes of the carbon lattice have been studied systematically in a series of samples. In the patterned samples, we found a systematic stiffe… ▽ More We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths and intensities of the characteristic phonon modes of the carbon lattice have been studied systematically in a series of samples. In the patterned samples, we found a systematic stiffening of the G band mode, accompanied by a line narrowing, while the 2D mode energies are found to be linearly correlated with the G mode energies. We interpret this as evidence for p-type doping of the nanostructured graphene. △ Less

Submitted 15 June, 2010; v1 submitted 10 June, 2010; originally announced June 2010.

Journal ref: Appl. Phys. Lett. 97, 043113 (2010)