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Condensed Matter > Materials Science

arXiv:1106.2951 (cond-mat)
[Submitted on 15 Jun 2011 (v1), last revised 17 Jun 2011 (this version, v2)]

Title:Low-temperature photocarrier dynamics in monolayer MoS2

Authors:T. Korn, S. Heydrich, M. Hirmer, J. Schmutzler, C. Schüller
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Abstract:The band structure of MoS$_2$ strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS$_2$. Single-layer MoS$_2$ therefore becomes an efficient emitter of photoluminescence even at room temperature. Here, we report on scanning Raman and on temperature-dependent, as well as time-resolved photoluminescence measurements on single-layer MoS$_2$ flakes prepared by exfoliation. We observe the emergence of two distinct photoluminescence peaks at low temperatures. The photocarrier recombination at low temperatures occurs on the few-picosecond timescale, but with increasing temperatures, a biexponential photoluminescence decay with a longer-lived component is observed.
Comments: 3 pages, 4 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1106.2951 [cond-mat.mtrl-sci]
  (or arXiv:1106.2951v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1106.2951
Journal reference: Applied Physics Letters 99, 102109 (2011)
Related DOI: https://doi.org/10.1063/1.3636402

Submission history

From: Tobias Korn [view email]
[v1] Wed, 15 Jun 2011 12:08:17 UTC (450 KB)
[v2] Fri, 17 Jun 2011 12:38:29 UTC (450 KB)
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