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Deposition of Ga2O3 thin films by liquid metal target sputtering
Authors:
Martins Zubkins,
Viktors Vibornijs,
Edvards Strods,
Edgars Butanovs,
Liga Bikse,
Mikael Ottosson,
Anders Hallén,
Jevgenijs Gabrusenoks,
Juris Purans,
Andris Azens
Abstract:
This paper reports on the deposition of amorphous and crystalline thin films of Ga2O3 by reactive pulsed direct current magnetron sputtering from a liquid gallium target onto fused (f-) quartz and c plane (c-) sapphire substrates, where the temperature of the substrate is varied from room temperature (RT) to 800°C. The deposition rate (up to 37 nm/min at RT on f-quartz and 5 nm/min at 800°C on c-s…
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This paper reports on the deposition of amorphous and crystalline thin films of Ga2O3 by reactive pulsed direct current magnetron sputtering from a liquid gallium target onto fused (f-) quartz and c plane (c-) sapphire substrates, where the temperature of the substrate is varied from room temperature (RT) to 800°C. The deposition rate (up to 37 nm/min at RT on f-quartz and 5 nm/min at 800°C on c-sapphire) is two to five times higher than the data given in the literature for radio frequency sputtering. Deposited onto unheated substrates, the films are X-ray amorphous. Well-defined X-ray diffraction peaks of \b{eta}-Ga2O3 start to appear at a substrate temperature of 500°C. Films grown on c-sapphire at temperatures above 600°C are epitaxial. However, the high rocking curve full width at half maximum values of {\approx} 2.4-2.5° are indicative of the presence of defects. A dense and void-free microstructure is observed in electron microscopy images. Composition analysis show stoichiometry close to Ga2O3 and no traces of impurities. The optical properties of low absorptance (<1%) in the visible range and an optical band gap of approximately 5 eV are consistent with the data in the literature for Ga2O3 films produced by other deposition methods.
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Submitted 10 January, 2023;
originally announced January 2023.
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Non-localized states and high hole mobility in amorphous germanium
Authors:
Tuan T. Tran,
Jennifer Wong-Leung,
Lachlan A. Smillie,
Anders Hallen,
Maria G. Grimaldi,
Jim S. Williams
Abstract:
Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band and the bottom of the conduction band. Electrical conductivity is thought to be by the hopping mechanism through localized states. The carrier mobility of these materials is usually very low, in the order of ~10^-3 - 10^-…
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Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band and the bottom of the conduction band. Electrical conductivity is thought to be by the hopping mechanism through localized states. The carrier mobility of these materials is usually very low, in the order of ~10^-3 - 10^-2 cm^2/(Vs) at room temperature. In this study, we present the Hall effect characterization of a-Ge prepared by self-ion implantation of Ge ions. The a-Ge prepared by this method is highly homogenous and has a mass density within 98.5% of the crystalline Ge. The material exhibits an exceptionally high electrical conductivity and carrier mobility (~100 cm^2/(Vs)) for an amorphous semiconductor. The temperature-dependent resistivity of the material is very-well defined with two distinctive regions, extrinsic and intrinsic conductivity, as in crystalline Ge. These results are direct evidence for a largely-preserved band structure and non-localized states of the valence band in a-Ge, as proposed by Tauc et al. from optical characterization alone. This finding is not only significant for the understanding of electrical conductivity in covalent disordered semiconductors, but the exceptionally high mobility we have observed in amorphous Ge opens up device applications not previously considered for amorphous semiconductors.
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Submitted 22 August, 2019;
originally announced August 2019.
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High-temperature deep-level transient spectroscopy system for defect studies in wide-bandgap semiconductors
Authors:
S. Majdi,
M. Gabrysch,
N. Suntornwipat,
F. Burmeister,
R. Jonsson,
K. K. Kovi,
A. Hallen
Abstract:
Full investigation of deep defect states and impurities in wide-bandgap materials by employing commercial transient capacitance spectroscopy is a challenge, demanding very high temperatures. Therefore, a high-temperature deep-level transient spectroscopy (HT-DLTS) system was developed for measurements up to 1100 K. The upper limit of the temperature range allows for the study of deep defects and t…
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Full investigation of deep defect states and impurities in wide-bandgap materials by employing commercial transient capacitance spectroscopy is a challenge, demanding very high temperatures. Therefore, a high-temperature deep-level transient spectroscopy (HT-DLTS) system was developed for measurements up to 1100 K. The upper limit of the temperature range allows for the study of deep defects and trap centers in the bandgap, deeper than previously reported by DLTS characterization in any material. Performance of the system was tested by conducting measurements on the well-known intrinsic defects in n-type 4H-SiC in the temperature range 300-950 K. Experimental observations performed on 4H-SiC Schottky diodes were in good agreement with the literatures. However, the DLTS measurements were restricted by the operation and quality of the electrodes.
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Submitted 4 April, 2019;
originally announced April 2019.
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Ultra-thin film and interface analysis of high-k dielectric materials employing Time-Of-Flight Medium Energy Ion Scattering (TOF-MEIS)
Authors:
Daniel Primetzhofer,
Eugenio Dentoni Litta,
Anders Hallén,
Margareta K. Linnarsson,
Göran Possnert
Abstract:
We explore the potential of Time-Of-Flight Medium Energy Ion Scattering (TOFMEIS) for thin film analysis and analyze possible difficulties in evaluation of experimental spectra. Issues regarding different combinations of composition and stopping power as well as the influence of channeling are discussed. As a model system high-k material stacks made from ultra-thin films of HfO2 grown on a p-type…
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We explore the potential of Time-Of-Flight Medium Energy Ion Scattering (TOFMEIS) for thin film analysis and analyze possible difficulties in evaluation of experimental spectra. Issues regarding different combinations of composition and stopping power as well as the influence of channeling are discussed. As a model system high-k material stacks made from ultra-thin films of HfO2 grown on a p-type Si (100) substrate with a 0.5 nm SiO2 interface layer have been investigated. By comparison of experimental spectra and computer simulations TOF-MEIS was employed to establish a depth profile of the films and thus obtaining information on stoichiometry and film quality. Nominal film thicknesses were in the range from 1.8 to 12.2 nm. As a supporting method Rutherford-Backscattering spectrometry (RBS) was employed to obtain the areal density of Hf atoms in the films.
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Submitted 3 September, 2013;
originally announced September 2013.
