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Condensed Matter > Materials Science

arXiv:1904.02589 (cond-mat)
[Submitted on 4 Apr 2019]

Title:High-temperature deep-level transient spectroscopy system for defect studies in wide-bandgap semiconductors

Authors:S. Majdi, M. Gabrysch, N. Suntornwipat, F. Burmeister, R. Jonsson, K. K. Kovi, A. Hallen
View a PDF of the paper titled High-temperature deep-level transient spectroscopy system for defect studies in wide-bandgap semiconductors, by S. Majdi and 5 other authors
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Abstract:Full investigation of deep defect states and impurities in wide-bandgap materials by employing commercial transient capacitance spectroscopy is a challenge, demanding very high temperatures. Therefore, a high-temperature deep-level transient spectroscopy (HT-DLTS) system was developed for measurements up to 1100 K. The upper limit of the temperature range allows for the study of deep defects and trap centers in the bandgap, deeper than previously reported by DLTS characterization in any material. Performance of the system was tested by conducting measurements on the well-known intrinsic defects in n-type 4H-SiC in the temperature range 300-950 K. Experimental observations performed on 4H-SiC Schottky diodes were in good agreement with the literatures. However, the DLTS measurements were restricted by the operation and quality of the electrodes.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1904.02589 [cond-mat.mtrl-sci]
  (or arXiv:1904.02589v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1904.02589
arXiv-issued DOI via DataCite
Journal reference: Review of Scientific Instruments 90, 063903 (2019)
Related DOI: https://doi.org/10.1063/1.5097755
DOI(s) linking to related resources

Submission history

From: Saman Majdi [view email]
[v1] Thu, 4 Apr 2019 14:54:22 UTC (871 KB)
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