Band gaps and phonons of quasi-bulk rocksalt ScN
Authors:
J. Grümbel,
Y. Oshima,
A. Dubroka,
M. Ramsteiner,
R. Goldhahn,
M. Feneberg
Abstract:
ScN is an emerging transition metal nitride with unique physical properties arising from the d-electrons of Sc. In this work we present the results of optical characterization techniques spectroscopic ellipsometry, Raman spectroscopy, and photoluminescence measurements of a 40 $μ$m thick, fully relaxed, and only weakly n-type doped ($n = 1.2 \times 10^{18}$ cm$^{-3}$) ScN film deposited by halide…
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ScN is an emerging transition metal nitride with unique physical properties arising from the d-electrons of Sc. In this work we present the results of optical characterization techniques spectroscopic ellipsometry, Raman spectroscopy, and photoluminescence measurements of a 40 $μ$m thick, fully relaxed, and only weakly n-type doped ($n = 1.2 \times 10^{18}$ cm$^{-3}$) ScN film deposited by halide vapor phase epitaxy (HVPE) on r-sapphire substrate. Spectroscopic ellipsometry yields an indirect bandgap of 1.1 eV while the lowest direct interband transition is observed at $E_\mathrm{g,opt} = $ 2.16 eV in the dielectric function. A broad luminescence feature at 2.15 eV is observed, matching this transition. We derive an estimate for the exciton binding energy ($E_{bX}\approx $14 meV) as well as the Born effective charges $Z_\mathrm{Sc}^* = -Z_\mathrm{N}^* = 3.78$. In the infrared spectral region we observe a strong phonon and a weak plasmon absorption. We precisely determine the transverse optical phonon eigenfrequency ($ω_\mathrm{TO} = $340.7 cm$^{-1}$), the high frequency dielectric constant ($\varepsilon_\infty = 8.3$) and the static dielectric constant ($\varepsilon_\mathrm{stat} = 29.5$). Raman measurements using various excitation energies show resonant multi-phonon scattering up to 6LO (6th order overtone for longitudinal optical (LO) phonons) for excitation above the optical band gap ($E_\mathrm{Laser} > E_\mathrm{g,opt}$), where the allowed 2LO scattering is the dominant scattering mechanism for all excitation energies. Their characteristic parameters determined from Lorentzian line shape fitting yield $ω_\mathrm{LO} = $681 cm$^{-1}$ and an increased broadening and reduced asymmetry for higher LO scattering order $n$.
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Submitted 19 March, 2025;
originally announced March 2025.
Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy
Authors:
Kingsley Egbo,
Esperanza Luna,
Jonas Lähnemann,
Georg Hoffmann,
Achim Trampert,
Jona Grümbel,
Elias Kluth,
Martin Feneberg,
Rüdiger Goldhahn,
Oliver Bierwagen
Abstract:
By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These films grow epitaxially across a wide substrate temperature range from 150 to 450°C. Hence, we present an alternative pathway to overcome the limitations of high Sn o…
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By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These films grow epitaxially across a wide substrate temperature range from 150 to 450°C. Hence, we present an alternative pathway to overcome the limitations of high Sn or SnO$_2$ cell temperatures and narrow growth windows encountered in previous MBE growth of metastable SnO. In-situ laser reflectometry and line-of-sight quadrupole mass spectrometry were used to investigate the rate of SnO desorption as a function of substrate temperature. While SnO ad-molecules desorption at Ts = 450°C was growth-rate limiting,the SnO films did not desorb at this temperature after growth in vacuum. The SnO (001) thin films are transparent and unintentionally p-type doped, with hole concentrations and mobilities in the range of 0.9 to 6.0x10$^{18}$cm$^{-3}$ and 2.0 to 5.5 cm$^2$/V.s, respectively. These p-type SnO films obtained at low temperatures are promising for back-end-of-line (BEOL) compatible applications and for integration with n-type oxides in p-n heterojunction and field-effect transistors
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Submitted 23 September, 2022;
originally announced September 2022.
