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Condensed Matter > Materials Science

arXiv:2209.11678 (cond-mat)
[Submitted on 23 Sep 2022]

Title:Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy

Authors:Kingsley Egbo, Esperanza Luna, Jonas Lähnemann, Georg Hoffmann, Achim Trampert, Jona Grümbel, Elias Kluth, Martin Feneberg, Rüdiger Goldhahn, Oliver Bierwagen
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Abstract:By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These films grow epitaxially across a wide substrate temperature range from 150 to 450°C. Hence, we present an alternative pathway to overcome the limitations of high Sn or SnO$_2$ cell temperatures and narrow growth windows encountered in previous MBE growth of metastable SnO. In-situ laser reflectometry and line-of-sight quadrupole mass spectrometry were used to investigate the rate of SnO desorption as a function of substrate temperature. While SnO ad-molecules desorption at Ts = 450°C was growth-rate limiting,the SnO films did not desorb at this temperature after growth in vacuum. The SnO (001) thin films are transparent and unintentionally p-type doped, with hole concentrations and mobilities in the range of 0.9 to 6.0x10$^{18}$cm$^{-3}$ and 2.0 to 5.5 cm$^2$/V.s, respectively. These p-type SnO films obtained at low temperatures are promising for back-end-of-line (BEOL) compatible applications and for integration with n-type oxides in p-n heterojunction and field-effect transistors
Comments: 18 pages, 10 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2209.11678 [cond-mat.mtrl-sci]
  (or arXiv:2209.11678v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2209.11678
Journal reference: J. Appl. Phys. 133, 045701 (2023)
Related DOI: https://doi.org/10.1063/5.0131138

Submission history

From: Kingsley Egbo [view email]
[v1] Fri, 23 Sep 2022 16:06:25 UTC (2,302 KB)
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