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Positive Terahertz Photoconductivity in CdHgTe Under Hydrostatic Pressure
Authors:
Ivan Yahniuk,
Dmitriy A. Kozlov,
Mariya D. Moldavskaya,
Leonid E. Golub,
Vasily V. Bel'kov,
Ivan A. Dmitriev,
Sergey S. Krishtopenko,
Frederic Teppe,
Yurii Ivonyak,
Artem Bercha,
Grzegorz Cywiński,
Wojciech Knap,
Sergey D. Ganichev
Abstract:
Positive terahertz photoconductivity is observed at room temperature in CdHgTe thin films with different Cd contents. We show that electron gas heating caused by Drude-like absorption results in positive photoconductivity because of the interband activation mechanism specific for undoped narrow-gap semiconductors and semimetals. Applying intense terahertz radiation, we observed that the photocondu…
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Positive terahertz photoconductivity is observed at room temperature in CdHgTe thin films with different Cd contents. We show that electron gas heating caused by Drude-like absorption results in positive photoconductivity because of the interband activation mechanism specific for undoped narrow-gap semiconductors and semimetals. Applying intense terahertz radiation, we observed that the photoconductivity saturates at high intensities, which was found to be caused by absorption bleaching. Both the magnitude of the photoconductivity and the saturation intensity are shown to exhibit an exponential dependence on the hydrostatic pressure. We show that this is a consequence of the fact that both phenomena are controlled by the ratio of energy and momentum relaxation times.
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Submitted 11 April, 2025;
originally announced April 2025.
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Bleaching of the Terahertz Magneto-Photogalvanic Effect in CdHgTe Crystals with Kane Fermions
Authors:
M. D. Moldavskaya,
L. E. Golub,
V. V. Bel'kov,
N. N. Mikhailov,
S. A. Dvoretsky,
D. Weiss,
S. D. Ganichev
Abstract:
We report the observation and comprehensive study of the complex nonlinear intensity dependence of the magneto-photogalvanic effect (MPGE) current induced by terahertz (THz) radiation in Cd$_{x}$Hg$_{1-x}$Te films with inverted ($x = 0.15$) and noninverted ($x = 0.22$) band structures. The nonlinearities are studied for the resonant MPGE caused by cyclotron resonance, interband transitions between…
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We report the observation and comprehensive study of the complex nonlinear intensity dependence of the magneto-photogalvanic effect (MPGE) current induced by terahertz (THz) radiation in Cd$_{x}$Hg$_{1-x}$Te films with inverted ($x = 0.15$) and noninverted ($x = 0.22$) band structures. The nonlinearities are studied for the resonant MPGE caused by cyclotron resonance, interband transitions between Landau levels, and ionization impurities, as well as for nonresonant indirect Drude-like optical transitions. We show that all these processes lead to the saturation of the photocurrent caused by absorption bleaching. We develop a theoretical framework for each mechanism, which describes measured nonlinearities over an intensity range from 10$^{-3}$ to $4\times10^{4}$ W/cm$^2$. Furthermore, we demonstrate that the saturation processes for these absorption channels differ significantly, allowing us to analyze them independently by considering different intensity regimes. The observed nonlinearities enable us to determine the energy relaxation times of Kane fermions excited by CR and interband optical transitions.
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Submitted 25 March, 2025;
originally announced March 2025.
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Spin orientation by electric current in altermagnets
Authors:
L. E. Golub,
L. Šmejkal
Abstract:
It is shown that the flow of electric current in an altermagnet results in the formation of a homogeneous electron spin orientation in the sample. The spin of the conduction electrons generated in altermagnets with $d$-wave spin-momentum couplings, is quadratic in the current magnitude, varies as the second angular harmonic under variation of the current direction and does not require broken inver…
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It is shown that the flow of electric current in an altermagnet results in the formation of a homogeneous electron spin orientation in the sample. The spin of the conduction electrons generated in altermagnets with $d$-wave spin-momentum couplings, is quadratic in the current magnitude, varies as the second angular harmonic under variation of the current direction and does not require broken inversion symmetry. The effect is thus distinct from conventional current induced spin polarization phenomena which are linear in the current, vary as a first angular harmonic under variation of current direction and require broken inversion symmetry. The current-induced spin orientation in altermagnets is obtained using the kinetic theory for distribution functions in the spin-splitted subbands. It is shown that an application of external magnetic field significantly enhances the electron spin.
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Submitted 15 March, 2025;
originally announced March 2025.
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Terahertz radiation driven nonlinear transport phenomena in two-dimensional tellurene
Authors:
Erwin Mönch,
Mariya D. Moldavskaya,
Leonid E. Golub,
Vasily V. Bel'kov,
Jörg Wunderlich,
Dieter Weiss,
Joanna Gumenjuk-Sichevska,
Chang Niu,
Peide D. Ye,
Sergey D. Ganichev
Abstract:
Nonlinear electron transport induced by polarized terahertz radiation is studied in two-dimensional tellurene at room temperature. A direct current, quadratic in the radiation's electric field, is observed. Contributions sensitive to radiation helicity, polarization orientation as well as polarization independent current are found. We show that these contributions can be modified by the magnitude…
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Nonlinear electron transport induced by polarized terahertz radiation is studied in two-dimensional tellurene at room temperature. A direct current, quadratic in the radiation's electric field, is observed. Contributions sensitive to radiation helicity, polarization orientation as well as polarization independent current are found. We show that these contributions can be modified by the magnitude of the external gate potential. We demonstrate that this terahertz-driven electric current arises from the Berry curvature dipole and the side-jump microscopic mechanisms.Nonlinear electron transport induced by polarized terahertz radiation is studied in two-dimensional tellurene at room temperature. A direct current, quadratic in the radiation's electric field, is observed. Contributions sensitive to radiation helicity, polarization orientation as well as polarization independent current are found. We show that these contributions can be modified by the magnitude of the external gate potential. We demonstrate that this terahertz-driven electric current arises from the Berry curvature dipole and the side-jump microscopic mechanisms.
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Submitted 23 October, 2024;
originally announced October 2024.
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Hanle effect in current induced spin orientation
Authors:
L. E. Golub,
E. L. Ivchenko
Abstract:
Electrical spin orientation is the generation of electron spin proportional to the electric current. This phenomenon is allowed by symmetry in gyrotropic systems, e.g. in inversion-asymmetric structures with Rashba spin-orbit splitting. Here we develop a theory of electrical spin orientation for magnetic two-dimensional heterostructures. Spin-orbit coupled graphene and semiconductor heterostructur…
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Electrical spin orientation is the generation of electron spin proportional to the electric current. This phenomenon is allowed by symmetry in gyrotropic systems, e.g. in inversion-asymmetric structures with Rashba spin-orbit splitting. Here we develop a theory of electrical spin orientation for magnetic two-dimensional heterostructures. Spin-orbit coupled graphene and semiconductor heterostructures proximitized by ferromagnets are considered. The analytical theory is based on the Boltzmann kinetic equation for a spin-dependent distribution function and collision integral. We show that the induced spin demonstrates the Hanle effect: a direction of the spin depends on the out-of-plane magnetization. Importantly, the Hanle effect is extremely sensitive to the details of electron elastic scattering. In semiconductor heterostructures, the effect of magnetization is present for scattering by long-range disorder and absent for short-range scattering. In spin-orbit-coupled graphene, the Hanle effect occurs at any scattering potential, but the direction of the spin strongly changes with variation of the disorder type. The theory also describes the effect of valley-Zeeman splitting on the electrical spin orientation in graphene, where the spin experiences opposite Hanle effects in two valleys.
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Submitted 3 October, 2024;
originally announced October 2024.
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Magnetophotogalvanic Effects Driven by Terahertz Radiation in CdHgTe Crystals with Kane Fermions
Authors:
M. D. Moldavskaya,
L. E. Golub,
V. V. Bel'kov,
S. N. Danilov,
D. A. Kozlov,
J. Wunderlich,
D. Weiss,
N. N. Mikhailov,
S. A. Dvoretsky,
S. S. Krishtopenko,
B. Benhamou-Bui,
F. Teppe,
S. D. Ganichev
Abstract:
We report on the observation and comprehensive study of the terahertz radiation induced magneto-photogalvanic effect (MPGE) in bulk CdHgTe crystals hosting Kane fermions. The MPGE has been detected in Cd$_{x}$Hg$_{1-x}$Te films with Cd contents $x = 0.15$ and $0.22$ subjected to an in-plane magnetic field. At liquid helium temperature we observed multiple resonances in MPGE current upon variation…
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We report on the observation and comprehensive study of the terahertz radiation induced magneto-photogalvanic effect (MPGE) in bulk CdHgTe crystals hosting Kane fermions. The MPGE has been detected in Cd$_{x}$Hg$_{1-x}$Te films with Cd contents $x = 0.15$ and $0.22$ subjected to an in-plane magnetic field. At liquid helium temperature we observed multiple resonances in MPGE current upon variation of magnetic field. In the $x = 0.22$ with noninverted band structure, the resonances are caused by cyclotron resonance (CR) and photoionization of an impurity level. In the $x = 0.15$ films with an inverted band structure, they originate from the CR and interband optical transitions. Band structure calculated by the Kane model perfectly describes positions of all resonances. In particularly, the resonant MPGE caused by interband transitions excited by THz radiation is caused by the gapless energy spectrum of Kane fermions realized in materials with certain Cd contents and temperature range. In addition to the resonant MPGE current we detected a nonresonant one due to indirect optical transitions (Drude-like). This contribution has a nonmonotonic magnetic field dependence increasing linearly at low magnetic field $B$, approaching a maximum at moderate field and decreasing at high $B$. While the nonresonant MPGE decreases drastically with increasing temperature, it is well measurable up to room temperature. The developed theory demonstrates that the MPGE current arises due to cubic in momentum spin-dependent terms in the scattering probability. The asymmetry caused by these effects results in a pure spin current which is converted into an electric current due to the Zeeman effect.
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Submitted 19 August, 2024;
originally announced August 2024.
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Terahertz and gigahertz magneto-ratchets in graphene-based 2D metamaterials
Authors:
Marcel Hild,
Erwin Mönch,
Leonid E. Golub,
Ivan A. Dmitriev,
Ivan Yahniuk,
Katharina Amann,
Julia Amann,
Jonathan Eroms,
Jörg Wunderlich,
Dieter Weiss,
Christophe Consejo,
Cedric Bray,
Kenneth Maussang,
Frederic Teppe,
Joanna Gumenjuk-Sichevska,
Kenji Watanabe,
Takashi Taniguchi,
Sergey D. Ganichev
Abstract:
We report on the observation and study of the magneto-ratchet effect in a graphene-based two-dimensional metamaterial formed by a graphite gate that is placed below a graphene monolayer and patterned with an array of triangular antidots. We demonstrate that terahertz/gigahertz excitation of the metamaterial leads to sign-alternating magneto-oscillations with an amplitude that exceeds the ratchet c…
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We report on the observation and study of the magneto-ratchet effect in a graphene-based two-dimensional metamaterial formed by a graphite gate that is placed below a graphene monolayer and patterned with an array of triangular antidots. We demonstrate that terahertz/gigahertz excitation of the metamaterial leads to sign-alternating magneto-oscillations with an amplitude that exceeds the ratchet current at zero magnetic field by orders of magnitude. The oscillations are shown to be related to the Shubnikov-de Haas effect. In addition to the giant ratchet current oscillations we detect resonant ratchet currents caused by the cyclotron and electron spin resonances. The results are well described by the developed theory considering the magneto-ratchet effect caused by the interplay of the near-field radiation and the nonuniform periodic electrostatic potential of the metamaterial controlled by the gate voltages.
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Submitted 22 July, 2024;
originally announced July 2024.
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Thermoelectric and viscous contributions to the hydrodynamic ratchet effect
Authors:
S. O. Potashin,
L. E. Golub,
V. Yu. Kachorovskii
Abstract:
We study thermoelectric and viscous contributions to the ratchet effect, i.e. radiation-induced generation of the direct electric current, $J_{\rm rat},$ in asymmetric dual-grating gate structure without inversion center. Previously [E.Mönch et al, Phys. Rev. B {\bf 105}, 045404 (2022)], it was demonstrated that frequency dependence of the $J_{\rm rat}$ is essentially different within hydrodynamic…
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We study thermoelectric and viscous contributions to the ratchet effect, i.e. radiation-induced generation of the direct electric current, $J_{\rm rat},$ in asymmetric dual-grating gate structure without inversion center. Previously [E.Mönch et al, Phys. Rev. B {\bf 105}, 045404 (2022)], it was demonstrated that frequency dependence of the $J_{\rm rat}$ is essentially different within hydrodynamic (HD) and drift-diffusion (DD) regimes of the electron transport: $ J_{\rm rat}^{\rm HD} \propto 1/ω^6 $ and $ J_{\rm rat}^{\rm DD} \propto 1/ω^2 $ for $ω\to \infty.$ Here we analyze previously neglected thermoelectric contribution and find that it yields high-frequency asymptotic $1/ω^2$ even in the HD regime and can change sign of the response. Account of the finite viscosity of the electron liquid yields contribution which scales at high frequency as $1/ω^4.$ We also find plasmonic resonances in the $J_{\rm rat},$ and demonstrate that asymmetry of the structure allows for excitation of the so-called directional travelling plasmons.
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Submitted 15 May, 2024;
originally announced May 2024.
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Circular THz ratchets in a 2D-modulated Dirac system
Authors:
M. Hild,
I. Yahniuk,
L. E. Golub,
J. Amann,
J. Eroms,
D. Weiss,
K. Watanabe,
T. Taniguchi,
S. D. Ganichev
Abstract:
We report on the observation of the circular ratchet effect excited by terahertz laser radiation in a specially designed two-dimensional metamaterial consisting of a graphene monolayer deposited on a graphite gate patterned with an array of triangular antidots. We show that a periodically driven Dirac fermion system with spatial asymmetry converts the a.c. power into a d.c. current, whose directio…
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We report on the observation of the circular ratchet effect excited by terahertz laser radiation in a specially designed two-dimensional metamaterial consisting of a graphene monolayer deposited on a graphite gate patterned with an array of triangular antidots. We show that a periodically driven Dirac fermion system with spatial asymmetry converts the a.c. power into a d.c. current, whose direction reverses when the radiation helicity is switched. The circular ratchet effect is demonstrated for room temperature and a radiation frequency of 2.54 THz. It is shown that the ratchet current magnitude can be controllably tuned by the patterned and uniform back gate voltages. The results are analyzed in the light of the developed microscopic theory considering electronic and plasmonic mechanisms of the ratchet current formation.
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Submitted 27 February, 2024;
originally announced February 2024.
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Terahertz ratchet in graphene 2D metamaterial formed by a patterned gate with an antidot arrayd
Authors:
I. Yahniuk,
M. Hild,
L. E. Golub,
J. Amann,
J. Eroms,
D. Weiss,
Wun-Hao Kang,
Ming-Hao Liu,
K. Watanabe,
T. Taniguchi,
S. D. Ganichev
Abstract:
We report the observation of the terahertz-induced ratchet effect in graphene-based two-dimensional (2D) metamaterials. The metamaterial consists of a graphite gate patterned with an array of triangular antidots placed under a graphene monolayer. We show that the ratchet current appears due to the noncentrosymmetry of the periodic structure unit cell. The ratchet current is generated owing to the…
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We report the observation of the terahertz-induced ratchet effect in graphene-based two-dimensional (2D) metamaterials. The metamaterial consists of a graphite gate patterned with an array of triangular antidots placed under a graphene monolayer. We show that the ratchet current appears due to the noncentrosymmetry of the periodic structure unit cell. The ratchet current is generated owing to the combined action of a spatially periodic in-plane electrostatic potential and a periodically modulated radiation electric field caused by near-field diffraction. The magnitude and direction of the ratchet current are shown to be controlled by voltages applied to both back and patterned gates, which change the lateral asymmetry, carrier type and density. The phenomenological and microscopic theories of ratchet effects in graphene-based 2D metamaterials are developed. The experimental data are discussed in the light of the theory based on the solution of the Boltzmann kinetic equation and the calculated electrostatic potential profile. The theory describes well all the experimental results and shows that the observed ratchet current consists of the Seebeck thermoratchet contribution as well as the linear contribution, which is sensitive to the orientation of the radiation electric field vector with respect to the triangles.
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Submitted 6 February, 2024;
originally announced February 2024.
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Theory of weak localization in graphene with spin-orbit interaction
Authors:
L. E. Golub
Abstract:
Theory of weak localization in graphene with Rashba splitting of energy spectrum is developed. Anomalous magnetoresistance caused by weak localization is calculated with account for inter- and intravalley, spin-orbit and spin-valley scattering processes. It is shown that the anomalous magnetoresistance is described by the expression different from the traditional Hikami-Larkin-Nagaoka formula. The…
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Theory of weak localization in graphene with Rashba splitting of energy spectrum is developed. Anomalous magnetoresistance caused by weak localization is calculated with account for inter- and intravalley, spin-orbit and spin-valley scattering processes. It is shown that the anomalous magnetoresistance is described by the expression different from the traditional Hikami-Larkin-Nagaoka formula. The reason is that the effect of Rashba splitting gives rise to the spin-orbit vector potential which is not reduced to a spin dephasing only. The developed theory can be applied to heterostructures of graphene with transition metal dichalcogenides.
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Submitted 12 October, 2023;
originally announced October 2023.
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Photocurrents in bulk tellurium
Authors:
M. D. Moldavskaya,
L. E. Golub,
S. N. Danilov,
V. V. Bel'kov,
D. Weiss,
S. D. Ganichev
Abstract:
We report a comprehensive study of polarized infrared/terahertz photocurrents in bulk tellurium crystals. We observe different photocurrent contributions and show that, depending on the experimental conditions, they are caused by the trigonal photogalvanic effect, the transverse linear photon drag effect, and the magnetic field induced linear and circular photogalvanic effects. All observed photoc…
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We report a comprehensive study of polarized infrared/terahertz photocurrents in bulk tellurium crystals. We observe different photocurrent contributions and show that, depending on the experimental conditions, they are caused by the trigonal photogalvanic effect, the transverse linear photon drag effect, and the magnetic field induced linear and circular photogalvanic effects. All observed photocurrents have not been reported before and are well explained by the developed phenomenological and microscopic theory. We show that the effects can be unambiguously distinguished by studying the polarization, magnetic field, and radiation frequency dependence of the photocurrent. At frequencies around 30 THz, the photocurrents are shown to be caused by the direct optical transitions between subbands in the valence band. At lower frequencies of 1 to 3 THz, used in our experiment, these transitions become impossible and the detected photocurrents are caused by the indirect optical transitions (Drude-like radiation absorption).
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Submitted 6 December, 2023; v1 submitted 24 August, 2023;
originally announced August 2023.
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Electrical Magnetochiral current in Tellurium
Authors:
L. E. Golub,
E. L. Ivchenko,
B. Spivak
Abstract:
We have studied theoretically the effect of Electrical Magneto-Chiral Anisotropy (eMChA) in $p$-type tellurium crystals. It is shown that the terms $k_i B_j$ in the hole Hamiltonian, linear both in the wave vector ${\mathbf k}$ and the magnetic field ${\mathbf B}$, do not lead to the eMChA and one needs to include the higher-order terms like $k_i^3 B_j$. Two microscopic mechanisms of the effect ar…
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We have studied theoretically the effect of Electrical Magneto-Chiral Anisotropy (eMChA) in $p$-type tellurium crystals. It is shown that the terms $k_i B_j$ in the hole Hamiltonian, linear both in the wave vector ${\mathbf k}$ and the magnetic field ${\mathbf B}$, do not lead to the eMChA and one needs to include the higher-order terms like $k_i^3 B_j$. Two microscopic mechanisms of the effect are considered. In the first one only elastic scattering of holes by impurities or imperfections are taken into consideration only. In the second mechanism, besides the elastic scattering processes the hole gas heating and its energy relaxation are taken into account. It is demonstrated that he both contributions to the magneto-induced rectification are comparable in magnitude. The calculation is performed by using two independent approaches, namely, in the time relaxation approximation and in the limit of of small chiral band parameter $β$. A bridge is thrown between the eMChA and magneto-induced photogalvanic effects.
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Submitted 20 August, 2023;
originally announced August 2023.
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Nonlinear intensity dependence of ratchet currents induced by terahertz laser radiation in bilayer graphene with asymmetric periodic grating gates
Authors:
Erwin Mönch,
Stefan Hubmann,
Ivan Yahniuk,
Sophia Schweiss,
Vasily V. Bel'kov,
Leonid E. Golub,
Robin Huber,
Jonathan Eroms,
Kenji Watanabe,
Takashi Taniguchi,
Dieter Weiss,
Sergey D. Ganichev
Abstract:
We report on the observation of a nonlinear intensity dependence of the terahertz radiation induced ratchet effects in bilayer graphene with asymmetric dual grating gate lateral lattices. These nonlinear ratchet currents are studied in structures of two designs with dual grating gate fabricated on top of encapsulated bilayer graphene and beneath it. The strength and sign of the photocurrent can be…
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We report on the observation of a nonlinear intensity dependence of the terahertz radiation induced ratchet effects in bilayer graphene with asymmetric dual grating gate lateral lattices. These nonlinear ratchet currents are studied in structures of two designs with dual grating gate fabricated on top of encapsulated bilayer graphene and beneath it. The strength and sign of the photocurrent can be controllably varied by changing the bias voltages applied to individual dual grating subgates and the back gate. The current consists of contributions insensitive to the radiation's polarization state, defined by the orientation of the radiation electric field vector with respect to the dual grating gate metal stripes, and the circular ratchet sensitive to the radiation helicity. We show that intense terahertz radiation results in a nonlinear intensity dependence caused by electron gas heating. At room temperature the ratchet current saturates at high intensities of the order of hundreds to several hundreds of kWcm$^{-2}$. At $T = 4 {\rm K}$, the nonlinearity manifests itself at intensities that are one or two orders of magnitude lower, moreover, the photoresponse exhibits a complex dependence on the intensity, including a saturation and even a change of sign with increasing intensity. This complexity is attributed to the interplay of the Seebeck ratchet and the dynamic carrier density redistribution, which feature different intensity dependencies and a nonlinear behavior of the sample's conductivity induced by electron gas heating. Our study demonstrates that graphene-based asymmetric dual grating gate devices can be used as terahertz detectors at room temperature over a wide dynamic range, spanning many orders of magnitude of terahertz radiation power. Therefore, their integration together with current-driven read-out electronics is attractive for the operation with high-power pulsed sources.
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Submitted 27 June, 2023;
originally announced June 2023.
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Terahertz spin ratchet effect in magnetic metamaterials
Authors:
M. Hild,
L. E. Golub,
A. Fuhrmann,
M. Otteneder,
M. Kronseder,
M. Matsubara,
T. Kobayashi,
D. Oshima,
A. Honda,
T. Kato,
J. Wunderlich,
C. Back,
S. D. Ganichev
Abstract:
We report on spin ratchet currents driven by terahertz radiation electric fields in a Co/Pt magnetic metamaterial formed by triangle-shaped holes forming an antidots lattice and subjected to an external magnetic field applied perpendicularly to the metal film plane. We show that for a radiation wavelength substantially larger than the period of the antidots array the radiation causes a polarizatio…
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We report on spin ratchet currents driven by terahertz radiation electric fields in a Co/Pt magnetic metamaterial formed by triangle-shaped holes forming an antidots lattice and subjected to an external magnetic field applied perpendicularly to the metal film plane. We show that for a radiation wavelength substantially larger than the period of the antidots array the radiation causes a polarization-independent spin-polarized ratchet current. The current is generated by the periodic asymmetric radiation intensity distribution caused by the near-field diffraction at the edges of the antidots, which induces spatially inhomogeneous periodic electron gas heating, and a phase-shifted periodic asymmetric electrostatic force. The developed microscopic theory shows that the magnetization of the Co/Pt film results in a spin ratchet current caused by both the anomalous Hall and the anomalous Nernst effects. Additionally, we observed a polarization-dependent trigonal spin photocurrent, which is caused by the scattering of electrons at the antidot boundaries resulting in a spin-polarized current due to the magnetization. Microscopic theory of these effects reveals that the trigonal photocurrent is generated at the boundaries of the triangle antidots, whereas the spin ratchet is generated due to the spatially periodic temperature gradient over the whole film. This difference causes substantially different hysteresis widths of these two currents.
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Submitted 16 January, 2023;
originally announced January 2023.
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Linear photogalvanic effect in surface states of topological insulators
Authors:
N. V. Leppenen,
L. E. Golub
Abstract:
Theory of the Linear photogalvanic effect is developed for direct optical transitions between surface states of three-dimensional topological insulators. The photocurrent governed by the orientation of the polarization plane of light and caused by the warping of the energy dispersion of two-dimensional carriers is calculated. It is shown that both the shift contribution caused by coordinate shifts…
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Theory of the Linear photogalvanic effect is developed for direct optical transitions between surface states of three-dimensional topological insulators. The photocurrent governed by the orientation of the polarization plane of light and caused by the warping of the energy dispersion of two-dimensional carriers is calculated. It is shown that both the shift contribution caused by coordinate shifts of the particle wavepackets during the optical transitions and the ballistic contribution caused by interference of the optical absorption and scattering by disorder have generally the same order of magnitude. The ballistic contribution is present owing to electron-hole asymmetry of topological surface states and has a frequency dependence in contrast to the shift photocurrent. In the nonlinear in the light intensity regime appearing due to saturation of the direct optical transitions the ballistic contribution dominates. The nontrivial dependence of the photocurrent on the polarization plane orientation in the nonlinear regime appears solely due to the ballistic contribution. Our findings allow separating the ballistic and shift contributions to the Linear photogalvanic current in experiments.
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Submitted 25 November, 2022;
originally announced November 2022.
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Spin and Valley Hall effects induced by asymmetric interparticle scattering
Authors:
M. M. Glazov,
L. E. Golub
Abstract:
We develop the theory of the spin and valley Hall effects in two-dimensional systems caused by asymmetric -- skew -- scattering of the quasiparticles. The collision integral is derived in the third order in the particle-particle interaction with account for the spin-orbit coupling both for bosons and fermions. It is shown that the scattering asymmetry appears only in the processes where the intera…
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We develop the theory of the spin and valley Hall effects in two-dimensional systems caused by asymmetric -- skew -- scattering of the quasiparticles. The collision integral is derived in the third order in the particle-particle interaction with account for the spin-orbit coupling both for bosons and fermions. It is shown that the scattering asymmetry appears only in the processes where the interaction between the particles in the initial and intermediate state is present. We show that for degenerate electrons or nondegenerate particles the spin and valley currents induced by interparticle collisions are suppressed with their steady-state values being proportional to the squared temperature or density, respectively. Our results imply non-Fermi liquid properties of electrons in the presence of electron-electron skew scattering. Strong deviations from conventional picture of interparticle scattering are also demonstrated for the skew scattering of two-dimensional degenerate bosons, e.g. excitons or exciton polaritons: The spin or valley current of degenerate bosons contains the enhancement factor exponentially growing with increase in the particle density.
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Submitted 28 September, 2022;
originally announced September 2022.
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Cyclotron- and magnetoplasmon resonances in bilayer graphene ratchets
Authors:
Erwin Mönch,
Sergey O. Potashin,
Katja Lindner,
Ivan Yahniuk,
Leonid E. Golub,
Valentin Yu. Kachorovskii,
Vassily V. Bel'kov,
Robin Huber,
Kenji Watanabe,
Takashi Taniguchi,
Jonathan Eroms,
Dieter Weiss,
Sergey D. Ganichev
Abstract:
We report on a tunable - by magnetic field and gate voltage - conversion of terahertz radiation into a dc current in spatially modulated bilayer graphene. We experimentally demonstrate that the underlying physics is related to the so-called ratchet effect. Our key findings are the direct observation of a sharp cyclotron resonance in the photocurrent and the demonstration of two effects caused by e…
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We report on a tunable - by magnetic field and gate voltage - conversion of terahertz radiation into a dc current in spatially modulated bilayer graphene. We experimentally demonstrate that the underlying physics is related to the so-called ratchet effect. Our key findings are the direct observation of a sharp cyclotron resonance in the photocurrent and the demonstration of two effects caused by electron-electron interaction: the plasmonic splitting of the resonance due to long-range Coulomb coupling and the partial suppression of its second harmonic due to fast interparticle collisions. We develop a theory which perfectly fits our data. We argue that the ratchet current is generated in the hydrodynamic regime of non-ideal electron liquid.
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Submitted 17 August, 2022;
originally announced August 2022.
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Raman Photogalvanic Effect: photocurrent at inelastic light scattering
Authors:
L. E. Golub,
M. M. Glazov
Abstract:
We show theoretically that electromagnetic waves propagating in the transparency region of a non-centrosymmetric medium can induce a dc electric current. The origin of the effect is the Raman scattering of light by free carriers in the system. Due to the photon scattering, electrons undergo real quantum transitions resulting in the formation of their anisotropic momentum distribution and in shifts…
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We show theoretically that electromagnetic waves propagating in the transparency region of a non-centrosymmetric medium can induce a dc electric current. The origin of the effect is the Raman scattering of light by free carriers in the system. Due to the photon scattering, electrons undergo real quantum transitions resulting in the formation of their anisotropic momentum distribution and in shifts of electronic wavepackets giving rise to a steady state photocurrent. We present microscopic theory of the Raman Photogalvanic effect (RPGE) focusing on two specific situations: (i) generic case of a bulk gyrotropic semiconductor and (ii) a quantum well structure where the light is scattered by intersubband excitations. We uncover the relation of the predicted RPGE and the traditional photogalvanic effect at the light absorption.
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Submitted 18 July, 2022;
originally announced July 2022.
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Weak localization in p-type heterostructures in the presence of parallel magnetic field
Authors:
M. O. Nestoklon,
L. E. Golub
Abstract:
Theory of weak localization is developed for two-dimensional holes in the presence of in-plane magnetic field. The Zeeman splitting even in the hole momentum results in the spin-dependent phase changing the quantum interference. The negative correction to the conductivity is shown to decrease by a factor of two by the in-plane magnetic field. The positive magnetoconductivity in a classically weak…
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Theory of weak localization is developed for two-dimensional holes in the presence of in-plane magnetic field. The Zeeman splitting even in the hole momentum results in the spin-dependent phase changing the quantum interference. The negative correction to the conductivity is shown to decrease by a factor of two by the in-plane magnetic field. The positive magnetoconductivity in a classically weak perpendicular field caused by the weak localization is calculated for both quadratic and quartic in momentum Zeeman hole splittings. Calculations show that the conductivity corrections are very close to each other in these two cases of low and high hole density.
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Submitted 1 June, 2022;
originally announced June 2022.
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Ratchet effect in spatially modulated bilayer graphene: Signature of hydrodynamic transport
Authors:
Erwin Mönch,
Sergey O. Potashin,
Katja Lindner,
Ivan Yahniuk,
Leonid E. Golub,
Valentin Yu. Kachorovskii,
Vasily V. Bel'kov,
Robin Huber,
Kenji Watanabe,
Takashi Taniguchi,
Jonathan Eroms,
Dieter Weiss,
Sergey D. Ganichev
Abstract:
We report on the observation of the ratchet effect -- generation of direct electric current in response to external terahertz (THz) radiation -- in bilayer graphene, where inversion symmetry is broken by an asymmetric dual-grating gate potential. As a central result, we demonstrate that at high temperature, $T = 150~\textrm{K}$, the ratchet current decreases at high frequencies as…
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We report on the observation of the ratchet effect -- generation of direct electric current in response to external terahertz (THz) radiation -- in bilayer graphene, where inversion symmetry is broken by an asymmetric dual-grating gate potential. As a central result, we demonstrate that at high temperature, $T = 150~\textrm{K}$, the ratchet current decreases at high frequencies as $ \propto 1/ω^2$, while at low temperature, $T = 4.2~\textrm{K}$, the frequency dependence becomes much stronger $\propto 1/ω^6$. The developed theory shows that the frequency dependence of the ratchet current is very sensitive to the ratio of the electron-impurity and electron-electron scattering rates. The theory predicts that the dependence $1/ω^6$ is realized in the hydrodynamic regime, when electron-electron scattering dominates, while $1/ω^2$ is specific for the drift-diffusion approximation. Therefore, our experimental observation of a very strong frequency dependence reveals the emergence of the hydrodynamic regime.
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Submitted 17 November, 2021;
originally announced November 2021.
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Nonlinear optical absorption and photocurrents in topological insulators
Authors:
N. V. Leppenen,
L. E. Golub
Abstract:
Theory of optical absorption of linearly and circularly polarized light in surface and edge states in topological insulators is developed for a nonlinear in light intensity regime. The absorbance for surface states and the absorption width for the edge states both decease as $1/\sqrt{I}$ at high light intensity $I$. Elastic scattering of the photoexcited electrons and holes is taken into account.…
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Theory of optical absorption of linearly and circularly polarized light in surface and edge states in topological insulators is developed for a nonlinear in light intensity regime. The absorbance for surface states and the absorption width for the edge states both decease as $1/\sqrt{I}$ at high light intensity $I$. Elastic scattering of the photoexcited electrons and holes is taken into account. The absorption bleaching at high intensity is shown to be strongly suppressed by the elastic scattering. The linear-circular dichroism of one- and two-photon absorption in surface states, emerging in the nonlinear in intensity regime, decreases due to the elastic scattering of photocarriers. Absorption in the edge states of two-dimensional topological insulators also depends on the elastic scattering rate being suppressed when it is stronger that the energy relaxation rate. The linear dichroism - a dependence of the absorption length on the polarization plane orientation - is studied at arbitrary light intensities. We show that a degree of the linear dichroism is governed by the ratio of the elastic and inelastic relaxation times. The photocurrents generated in the edge states by both linearly and circularly polarized light change their intensity dependencies from the linear one at low $I$ to the $\propto \sqrt{I}$ at high intensities. The variation of the photocurrents with both polarization and intensity are strongly dependent on the elastic scattering rate. The considered effects can be observed in THz frequency range at laser intensities used in modern experiments.
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Submitted 28 October, 2021;
originally announced October 2021.
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Ratchet effect in frequency-modulated waveguide-coupled emitter arrays
Authors:
Alexander N. Poddubny,
Leonid E. Golub
Abstract:
We study theoretically the spatial distribution of the polarizations in the array of resonant electromagnetic dipole emitters coupled to a one-dimensional waveguide. The ratchet effect manifests itself in the spatial asymmetry of the distribution of the emitter occupations along the array under symmetrical pumping from both sides. The occupation asymmetry is driven by the periodic modulation in ti…
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We study theoretically the spatial distribution of the polarizations in the array of resonant electromagnetic dipole emitters coupled to a one-dimensional waveguide. The ratchet effect manifests itself in the spatial asymmetry of the distribution of the emitter occupations along the array under symmetrical pumping from both sides. The occupation asymmetry is driven by the periodic modulation in time of the emitter resonance frequencies. We find numerically and analytically the optimal conditions for maximal asymmetry. We also demonstrate that the ratchet effect can be enhanced due to the formation of topological electromagnetic edge states, enabled by the frequency modulation. Our results apply to the classical structures with coupled resonators or arrays of semiconductor quantum wells as well as the quantum setups with waveguide-coupled natural or artificial atoms.
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Submitted 20 September, 2021;
originally announced September 2021.
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Highly superlinear photogalvanic effects in (Bi$_{0.3}$Sb$_{0.7}$)$_2$(Te$_{0.1}$Se$_{0.9}$)$_3$: Probing 3D topological insulator surface states at room temperature
Authors:
Sergey N. Danilov,
Leonid E. Golub,
Thomas Mayer,
Andreas Beer,
Stefan Binder,
Erwin Mönch,
Jan Minar,
Matthias Kronseder,
Christian. H. Back,
Dominique Bougeard,
Sergey D. Ganichev
Abstract:
We report on the observation of complex nonlinear intensity dependence of the circular and linear photogalvanic currents induced by infrared radiation in compensated (Bi$_{0.3}$Sb$_{0.7}$)$_2$(Te$_{0.1}$Se$_{0.9}$)$_3$ 3D topological insulators. The photocurrents are induced by direct optical transitions between topological surface and bulk states. We show that an increase of the radiation intensi…
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We report on the observation of complex nonlinear intensity dependence of the circular and linear photogalvanic currents induced by infrared radiation in compensated (Bi$_{0.3}$Sb$_{0.7}$)$_2$(Te$_{0.1}$Se$_{0.9}$)$_3$ 3D topological insulators. The photocurrents are induced by direct optical transitions between topological surface and bulk states. We show that an increase of the radiation intensity results first in a highly superlinear raise of the amplitude of both types of photocurrents, whereas at higher intensities the photocurrent saturates. Our analysis of the observed nonlinearities shows that the superlinear behavior of the photocurrents is caused by a heating of the electron gas, while the saturation is induced by a slow relaxation of the photoexcited carriers resulting in absorbance bleaching. The observed nonlinearities give access to the Fermi level position with respect to the Dirac point and the energy relaxation times of Dirac fermions providing an experimental room temperature probe for topological surface states.
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Submitted 3 August, 2021;
originally announced August 2021.
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Nonlinear intensity dependence of terahertz edge photocurrents in graphene
Authors:
S. Candussio,
L. E. Golub,
S. Bernreuter,
T. Jötten,
T. Rockinger,
K. Watanabe,
T. Taniguchi,
J. Eroms,
D. Weiss,
S. D. Ganichev
Abstract:
We report on the observation of terahertz radiation induced edge photogalvanic currents in graphene, which are nonlinear in intensity. The increase of the radiation intensities up to MW/cm$^2$ results in a complex nonlinear intensity dependence of the photocurrent. The nonlinearity is controlled by the back gate voltage, temperature and radiation frequency. A microscopic theory of the nonlinear ed…
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We report on the observation of terahertz radiation induced edge photogalvanic currents in graphene, which are nonlinear in intensity. The increase of the radiation intensities up to MW/cm$^2$ results in a complex nonlinear intensity dependence of the photocurrent. The nonlinearity is controlled by the back gate voltage, temperature and radiation frequency. A microscopic theory of the nonlinear edge photocurrent is developed. Comparison of the experimental data and theory demonstrates that the nonlinearity of the photocurrent is caused by the interplay of two mechanisms, i.e. by direct inter-band optical transitions and Drude-like absorption. Both photocurrents saturate at high intensities, but have different intensity dependencies and saturation intensities. The total photocurrent shows a complex sign-alternating intensity dependence. The functional behaviour of the saturation intensities and amplitudes of both kinds of photogalvanic currents depending on gate voltages, temperature, radiation frequency and polarization is in a good agreement with the developed theory.
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Submitted 2 July, 2021;
originally announced July 2021.
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Sommerfeld enhancement factor in two-dimensional Dirac materials
Authors:
N. V. Leppenen,
L. E. Golub,
E. L. Ivchenko
Abstract:
In this work the above-band gap absorption spectrum in two-dimensional Dirac materials is calculated with account for the interaction between the photocarriers. Both the screened Rytova-Keldysh and pure Coulomb attraction potentials between the electron and hole are used in the study. We find that, in the materials under consideration, the interaction enhances the absorbance in the narrow interban…
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In this work the above-band gap absorption spectrum in two-dimensional Dirac materials is calculated with account for the interaction between the photocarriers. Both the screened Rytova-Keldysh and pure Coulomb attraction potentials between the electron and hole are used in the study. We find that, in the materials under consideration, the interaction enhances the absorbance in the narrow interband edge region, in a sharp contrast to the band model with the parabolic free-carrier energy dispersion. We develop an approximation of the weak interaction which allows us to reproduce the main features of the exactly calculated Sommerfeld factor. We show a substantial reduction of this factor at higher frequencies due to the single-particle energy renormalization.
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Submitted 26 April, 2021;
originally announced April 2021.
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Interlayer exciton mediated second harmonic generation in bilayer MoS2
Authors:
Shivangi Shree,
Delphine Lagarde,
Laurent Lombez,
Cedric Robert,
Andrea Balocchi,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Iann C. Gerber,
Mikhail M. Glazov,
Leonid E. Golub,
Bernhard Urbaszek,
Ioannis Paradisanos
Abstract:
Second harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of…
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Second harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of bilayer MoS2, that shows strong optical oscillator strength for the intra- but also inter-layer exciton resonances. As we tune the SHG signal onto these resonances by varying the laser energy, the SHG amplitude is enhanced by several orders of magnitude. In the resonant case the bilayer SHG signal reaches amplitudes comparable to the off-resonant signal from a monolayer. In applied electric fields the interlayer exciton energies can be tuned due to their in-built electric dipole via the Stark effect. As a result the interlayer exciton degeneracy is lifted and the bilayer SHG response is further enhanced by an additional two orders of magnitude, well reproduced by our model calculations.
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Submitted 2 April, 2021;
originally announced April 2021.
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Strong enhancement of heavy-hole Landé factor $q$ in InGaAs symmetric quantum dots revealed by coherent optical spectroscopy
Authors:
A. V. Trifonov,
I. A. Akimov,
L. E. Golub,
E. L. Ivchenko,
I. A. Yugova,
A. N. Kosarev,
S. E. Scholz,
C. Sgroi,
A. Ludwig,
A. D. Wieck,
D. R. Yakovlev,
M. Bayer
Abstract:
We reveal the existence of a large in-plane heavy-hole $g$ factor in symmetric self-assembled (001) (In,Ga)As/GaAs quantum dots due to warping of valence band states. This warping dominates over the well-established mechanism associated with a reduced symmetry of quantum dots and the corresponding mixing of heavy-hole and light-hole states. The effect of band warping is manifested in a unique angu…
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We reveal the existence of a large in-plane heavy-hole $g$ factor in symmetric self-assembled (001) (In,Ga)As/GaAs quantum dots due to warping of valence band states. This warping dominates over the well-established mechanism associated with a reduced symmetry of quantum dots and the corresponding mixing of heavy-hole and light-hole states. The effect of band warping is manifested in a unique angular dependence of a trion photon echo signal on the direction of external magnetic field with respect to the sample axes. It results in a uniform magnetic-field-induced optical anisotropy for the entire quantum dot ensemble which is a prerequisite for realization of spin quantum memories and spin-photon entanglement in the ensemble.
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Submitted 25 March, 2021;
originally announced March 2021.
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Exciton oscillator strength in two-dimensional Dirac materials
Authors:
N. V. Leppenen,
L. E. Golub,
E. L. Ivchenko
Abstract:
Exciton problem is solved in the two-dimensional Dirac model with allowance for strong electron-hole attraction. The exciton binding energy is assumed smaller than but comparable to the band gap. The exciton wavefunction is found in the momentum space as a superposition of all four two-particle states including electron and hole states with both positive and negative energies. The matrix element o…
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Exciton problem is solved in the two-dimensional Dirac model with allowance for strong electron-hole attraction. The exciton binding energy is assumed smaller than but comparable to the band gap. The exciton wavefunction is found in the momentum space as a superposition of all four two-particle states including electron and hole states with both positive and negative energies. The matrix element of exciton generation is shown to depend on the additional components of the exciton wavefunction. Both the Coulomb and the Rytova-Keldysh potentials are considered. The dependence of the binding energy on the coupling constant is analyzed for the ground and first excited exciton states. The binding energy and the oscillator strength are studied as functions of the environmental-dependent dielectric constant for real transition metal dichalcogenide monolayers. We demonstrate that the multicomponent nature of the exciton wavefunction is crucial for description of resonant optical properties of two-dimensional Dirac systems.
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Submitted 9 July, 2020;
originally announced July 2020.
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Skew Scattering and Side Jump Drive Exciton Valley Hall Effect in Two-Dimensional Crystals
Authors:
M. M. Glazov,
L. E. Golub
Abstract:
Exciton Valley Hall effect is the spatial separation of the valley-tagged excitons in the presence of a drag force. Usually, the effect is associated with the anomalous velocity acquired by the particles due to the Berry curvature of the Bloch bands. Here we show that the anomalous velocity plays no role in the exciton valley Hall effect, which is governed by the side-jump and skew scattering mech…
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Exciton Valley Hall effect is the spatial separation of the valley-tagged excitons in the presence of a drag force. Usually, the effect is associated with the anomalous velocity acquired by the particles due to the Berry curvature of the Bloch bands. Here we show that the anomalous velocity plays no role in the exciton valley Hall effect, which is governed by the side-jump and skew scattering mechanisms. We develop microscopic theory of the exciton valley Hall effect in the presence of synthetic electric field and phonon drag and calculate all relevant contributions to the valley Hall current also demonstrating the cancellation of the anomalous velocity. The sensitivity of the effect to the origin of the drag force and to the scattering processes is shown. We extend the drift-diffusion model to account for the valley Hall effect and calculate the exciton density and valley polarization profiles.
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Submitted 4 September, 2020; v1 submitted 1 July, 2020;
originally announced July 2020.
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Semiclassical theory of the circular photogalvanic effect in gyrotropic systems
Authors:
L. E. Golub,
E. L. Ivchenko,
B. Spivak
Abstract:
We develop a theory of circular photogalvanic effect (CPGE) for classically high photon energies which exceed the electron scattering rate but are small compared to the average electron kinetic energy. In this frequency range one can calculate the CPGE by using two different approaches. In the fully quantum-mechanical approach we find the photocurrent density by applying Fermi's golden rule for in…
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We develop a theory of circular photogalvanic effect (CPGE) for classically high photon energies which exceed the electron scattering rate but are small compared to the average electron kinetic energy. In this frequency range one can calculate the CPGE by using two different approaches. In the fully quantum-mechanical approach we find the photocurrent density by applying Fermi's golden rule for indirect intraband optical transitions with virtual intermediate states both in the conduction and valence bands. In the framework of the semiclassical approach, we apply a generalized Boltzmann equation with accounts for the Berry-curvature induced anomalous velocity, side jumps and skew scattering. The calculation is carried out for a wurtzite symmetry crystal. Both methods yield the same results for the CPGE current demonstrating consistency between the two approaches and applicability of the semiclassical theory for the description of nonlinear high-frequency transport.
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Submitted 27 July, 2020; v1 submitted 19 June, 2020;
originally announced June 2020.
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Terahertz photogalvanics in twisted bilayer graphene close to the second magic angle
Authors:
M. Otteneder,
S. Hubmann,
X. Lu,
D. Kozlov,
L. E. Golub,
K. Watanabe,
T. Taniguchi,
D. K. Efetov,
S. D. Ganichev
Abstract:
We report on the observation of photogalvanic effects in twisted bilayer graphene (tBLG) with a twist angle of 0.6°. We show that excitation of tBLG bulk causes a photocurrent, whose sign and magnitude are controlled by orientation of the radiation electric field and the photon helicity. The observed photocurrent provides evidence for the reduction of the point group symmetry in low twist-angle tB…
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We report on the observation of photogalvanic effects in twisted bilayer graphene (tBLG) with a twist angle of 0.6°. We show that excitation of tBLG bulk causes a photocurrent, whose sign and magnitude are controlled by orientation of the radiation electric field and the photon helicity. The observed photocurrent provides evidence for the reduction of the point group symmetry in low twist-angle tBLG to the lowest possible one. The developed theory shows that the current is formed by asymmetric scattering in gyrotropic tBLG. We also detected the photogalvanic current formed in the vicinity of the edges. For both, bulk and edge photocurrents, we demonstrate the emergence of pronounced oscillations upon variation of the gate voltage. The gate voltages associated with the oscillations coincide well with peaks in resistance measurements. These are well explained by inter-band transitions between a multitude of isolated bands in tBLG.
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Submitted 15 June, 2020;
originally announced June 2020.
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Valley Hall effect caused by the phonon and photon drag
Authors:
M. M. Glazov,
L. E. Golub
Abstract:
Valley Hall effect is an appearance of the valley current in the direction transverse to the electric current. We develop the microscopic theory of the valley Hall effect in two-dimensional semiconductors where the electrons are dragged by the phonons or photons. We derive and analyze all relevant contributions to the valley current including the skew-scattering effects together with the anomalous…
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Valley Hall effect is an appearance of the valley current in the direction transverse to the electric current. We develop the microscopic theory of the valley Hall effect in two-dimensional semiconductors where the electrons are dragged by the phonons or photons. We derive and analyze all relevant contributions to the valley current including the skew-scattering effects together with the anomalous contributions caused by the side-jumps and the anomalous velocity. The partial compensation of the anomalous contributions is studied in detail. The role of two-phonon and two-impurity scattering processes is analyzed. We also compare the valley Hall effect under the drag conditions and the valley Hall effect caused by the external static electric field.
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Submitted 4 September, 2020; v1 submitted 10 April, 2020;
originally announced April 2020.
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Giant ratchet magneto-photocurrent in graphene lateral superlattices
Authors:
S. Hubmann,
V. V. Bel'kov,
L. E. Golub,
V. Yu. Kachorovskii,
M. Drienovsky,
J. Eroms,
D. Weiss,
S. D. Ganichev
Abstract:
We report on the observation of the magnetic quantum ratchet effect in graphene with a lateral dual-grating top gate (DGG) superlattice. We show that the THz ratchet current exhibits sign-alternating magneto-oscillations due to the Shubnikov-de Haas effect. The amplitude of these oscillations is greatly enhanced as compared to the ratchet effect at zero magnetic field. The direction of the current…
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We report on the observation of the magnetic quantum ratchet effect in graphene with a lateral dual-grating top gate (DGG) superlattice. We show that the THz ratchet current exhibits sign-alternating magneto-oscillations due to the Shubnikov-de Haas effect. The amplitude of these oscillations is greatly enhanced as compared to the ratchet effect at zero magnetic field. The direction of the current is determined by the lateral asymmetry which can be controlled by variation of gate potentials in DGG. We also study the dependence of the ratchet current on the orientation of the terahertz electric field (for linear polarization) and on the radiation helicity (for circular polarization). Notably, in the latter case, switching from right- to left-circularly polarized radiation results in an inversion of the photocurrent direction. We demonstrate that most of our observations can be well fitted by the drift-diffusion approximation based on the Boltzmann kinetic equation with the Landau quantization fully encoded in the oscillations of the density of states.
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Submitted 9 April, 2020;
originally announced April 2020.
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Microscopic dynamics of electron hopping in a semiconductor quantum well probed by spin-dependent photon echoes
Authors:
A. N. Kosarev,
S. V. Poltavtsev,
L. E. Golub,
M. M. Glazov,
M. Salewski,
N. V. Kozyrev,
E. A. Zhukov,
D. R. Yakovlev,
G. Karczewski,
S. Chusnutdinow,
T. Wojtowicz,
I. A. Akimov,
M. Bayer
Abstract:
Spin-dependent photon echoes in combination with pump-probe Kerr rotation are used to study the microscopic electron spin transport in a CdTe/(Cd,Mg)Te quantum well in the hopping regime. We demonstrate that independent of the particular spin relaxation mechanism, hopping of resident electrons leads to a shortening of the photon echo decay time, while the transverse spin relaxation time evaluated…
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Spin-dependent photon echoes in combination with pump-probe Kerr rotation are used to study the microscopic electron spin transport in a CdTe/(Cd,Mg)Te quantum well in the hopping regime. We demonstrate that independent of the particular spin relaxation mechanism, hopping of resident electrons leads to a shortening of the photon echo decay time, while the transverse spin relaxation time evaluated from pump-probe transients increases due to motional narrowing of spin dynamics in the fluctuating effective magnetic field of the lattice nuclei.
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Submitted 30 July, 2019;
originally announced July 2019.
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Nonlinear Absorption and Photocurrent in Weyl Semimetals
Authors:
N. V. Leppenen,
E. L. Ivchenko,
L. E. Golub
Abstract:
Theory of light absorption and circular photocurrent in Weyl semimetals is developed for arbitrary large light intensities with account for both elastic and inelastic relaxation processes of Weyl fermions. The direct optical transition rate is shown to saturate at large intensity, and the saturation behaviour depends on the light polarization and on the ratio of the elastic and inelastic relaxatio…
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Theory of light absorption and circular photocurrent in Weyl semimetals is developed for arbitrary large light intensities with account for both elastic and inelastic relaxation processes of Weyl fermions. The direct optical transition rate is shown to saturate at large intensity, and the saturation behaviour depends on the light polarization and on the ratio of the elastic and inelastic relaxation times. The linear-circular dichroism in absorption is shown to exceed 10~\% at intermediate light wave amplitudes and fast energy relaxation. At large intensity $I$, the light absorption coefficient drops as $1/\sqrt{I}$, and the circular photogalvanic current increases as $\sqrt{I}$.
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Submitted 3 June, 2019;
originally announced June 2019.
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Circular photocurrent in Weyl semimetals with mirror symmetry
Authors:
N. V. Leppenen,
E. L. Ivchenko,
L. E. Golub
Abstract:
We have studied theoretically the Weyl semimetals the point symmetry group of which has reflection planes and which contain equivalent valleys with opposite chiralities. These include the most frequently studied compounds, namely the transition metals monopnictides TaAs, NbAs, TaP, NbP, and also Bi$_{1-x}$Sb$_x$ alloys. The circular photogalvanic current, which inverts its direction under reversal…
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We have studied theoretically the Weyl semimetals the point symmetry group of which has reflection planes and which contain equivalent valleys with opposite chiralities. These include the most frequently studied compounds, namely the transition metals monopnictides TaAs, NbAs, TaP, NbP, and also Bi$_{1-x}$Sb$_x$ alloys. The circular photogalvanic current, which inverts its direction under reversal of the light circular polarization, has been calculated for the light absorption under direct optical transitions near the Weyl points. In the studied materials, the total contribution of all the valleys to the photocurrent is nonzero only beyond the simple Weyl model, namely, if the effective electron Hamiltonian is extended to contain either an anisotropic spin-dependent linear contribution together with a spin-independent tilt or a spin-dependent contribution cubic in the electron wave vector $\bf{k}$. With allowance for the tilt of the energy dispersion cone in a Weyl semimetal of the $C_{4v}$ symmetry, the photogalvanic current is expressed in terms of the components of the second-rank symmetric tensor that determines the energy spectrum of the carriers near the Weyl node; at low temperature, this contribution to the photocurrent is generated within a certain limited frequency range $Δ$. The photocurrent due to the cubic corrections, in the optical absorption region, is proportional to the light frequency squared and generated both inside and outside the $Δ$ window.
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Submitted 29 May, 2019;
originally announced May 2019.
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Weak Localization in Systems with Chiral Spin Textures and Skyrmion Crystals
Authors:
K. S. Denisov,
L. E. Golub
Abstract:
Theory of interference-induced quantum corrections to conductivity is developed for two dimensional systems with chiral spin textures including skyrmions. The effect of exchange interaction between electrons and spin textures on weak localization of electronic waves is studied. The spin dephasing rates are calculated as functions of the spin texture size. The anomalous magnetoresistance is shown t…
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Theory of interference-induced quantum corrections to conductivity is developed for two dimensional systems with chiral spin textures including skyrmions. The effect of exchange interaction between electrons and spin textures on weak localization of electronic waves is studied. The spin dephasing rates are calculated as functions of the spin texture size. The anomalous magnetoresistance is shown to be governed by the size and magnetization spatial distribution of the spin textures. The effect of average magnetization-induced spin splitting on weak localization is analyzed. The sign-alternating weak-antilocalization magnetoresistance is demonstrated for skyrmion crystals. We argue that analysis of the low-field magnetoresistance serves as an independent tool for an experimental detection of chiral spin textures and, in particular, skyrmions.
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Submitted 6 March, 2019;
originally announced March 2019.
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Electronic band structure in $n$-type GaAs/AlGaAs wide quantum wells in tilted magnetic field
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. V. Suslov,
M. O. Nestoklon,
D. Kamburov,
K. W. Baldwin,
L. N. Pfeiffer,
K. W. West,
L. E. Golub
Abstract:
Oscillations of the real component of AC conductivity $σ_1$ in a magnetic field were measured in the n-AlGaAs/GaAs structure with a wide (75 nm) quantum well by contactless acoustic methods at $T$=(20-500)~mK. In a wide quantum well, the electronic band structure is associated with the two-subband electron spectrum, namely the symmetric (S) and antisymmetric (AS) subbands formed due to electrostat…
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Oscillations of the real component of AC conductivity $σ_1$ in a magnetic field were measured in the n-AlGaAs/GaAs structure with a wide (75 nm) quantum well by contactless acoustic methods at $T$=(20-500)~mK. In a wide quantum well, the electronic band structure is associated with the two-subband electron spectrum, namely the symmetric (S) and antisymmetric (AS) subbands formed due to electrostatic repulsion of electrons. A change of the oscillations amplitude in tilted magnetic field observed in the experiments occurs due to crossings of Landau levels of different subbands (S and AS) at the Fermi level. The theory developed in this work shows that these crossings are caused by the difference in the cyclotron energies in the S and AS subbands induced by the in-plane magnetic field.
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Submitted 2 September, 2019; v1 submitted 17 November, 2018;
originally announced November 2018.
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Bulk inversion asymmetry induced magnetogyrotropic reflection from quantum wells
Authors:
L. V. Kotova,
V. N. Kats,
A. V. Platonov,
V. P. Kochereshko,
R. André,
L. E. Golub
Abstract:
Bulk inversion asymmetry (BIA) of III-V and II-VI semiconductor quantum wells is demonstrated by reflection experiments in magnetic field oriented in the structure plane. The linear in the magnetic field contribution to the reflection coefficients is measured at oblique incidence of $s$ and $p$ polarized light in vicinity of exciton resonances. We demonstrate that this contribution to the reflecti…
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Bulk inversion asymmetry (BIA) of III-V and II-VI semiconductor quantum wells is demonstrated by reflection experiments in magnetic field oriented in the structure plane. The linear in the magnetic field contribution to the reflection coefficients is measured at oblique incidence of $s$ and $p$ polarized light in vicinity of exciton resonances. We demonstrate that this contribution to the reflection is caused by magnetogyrotropy of quantum wells, i.e. by the terms in the optical response which are linear in both the magnetic field strength and light wavevector. Theory of magnetogyrotropic effects in light reflection is developed with account for linear in momentum BIA induced terms in the electron and hole effective Hamiltonians. Theoretical estimates agree with the experimental findings. We have found the electron BIA splitting constant in both GaAs and CdTe based quantum wells is about three times smaller than that for heavy holes.
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Submitted 3 November, 2018;
originally announced November 2018.
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Exciton states in monolayer MoSe2 and MoTe2 probed by upconversion spectroscopy
Authors:
B. Han,
C. Robert,
E. Courtade,
M. Manca,
S. Shree,
T. Amand,
P. Renucci,
T. Taniguchi,
K. Watanabe,
X. Marie,
L. E. Golub,
M. M. Glazov,
B. Urbaszek
Abstract:
Transitions metal dichalcogenides (TMDs) are direct semiconductors in the atomic monolayer (ML) limit with fascinating optical and spin-valley properties. The strong optical absorption of up to 20 % for a single ML is governed by excitons, electron-hole pairs bound by Coulomb attraction. Excited exciton states in MoSe$_2$ and MoTe$_2$ monolayers have so far been elusive due to their low oscillator…
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Transitions metal dichalcogenides (TMDs) are direct semiconductors in the atomic monolayer (ML) limit with fascinating optical and spin-valley properties. The strong optical absorption of up to 20 % for a single ML is governed by excitons, electron-hole pairs bound by Coulomb attraction. Excited exciton states in MoSe$_2$ and MoTe$_2$ monolayers have so far been elusive due to their low oscillator strength and strong inhomogeneous broadening. Here we show that encapsulation in hexagonal boron nitride results in emission line width of the A:1$s$ exciton below 1.5 meV and 3 meV in our MoSe$_2$ and MoTe$_2$ monolayer samples, respectively. This allows us to investigate the excited exciton states by photoluminescence upconversion spectroscopy for both monolayer materials. The excitation laser is tuned into resonance with the A:1$s$ transition and we observe emission of excited exciton states up to 200 meV above the laser energy. We demonstrate bias control of the efficiency of this non-linear optical process. At the origin of upconversion our model calculations suggest an exciton-exciton (Auger) scattering mechanism specific to TMD MLs involving an excited conduction band thus generating high energy excitons with small wave-vectors. The optical transitions are further investigated by white light reflectivity, photoluminescence excitation and resonant Raman scattering confirming their origin as excited excitonic states in monolayer thin semiconductors.
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Submitted 11 May, 2018;
originally announced May 2018.
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Spin-related phenomena in two-dimensional hopping regime in magnetic field
Authors:
A. V. Shumilin,
D. S. Smirnov,
L. E. Golub
Abstract:
The spin relaxation time of localized charge carriers is few orders of magnitude larger than that of free electrons and holes. Therefore mutual conversion of spin polarization, charge current and spin current turns out to be underlined in the hopping conductivity regime. We reveal different regimes of the coupled spin and charge dynamics depending on the relation between spin relaxation time and t…
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The spin relaxation time of localized charge carriers is few orders of magnitude larger than that of free electrons and holes. Therefore mutual conversion of spin polarization, charge current and spin current turns out to be underlined in the hopping conductivity regime. We reveal different regimes of the coupled spin and charge dynamics depending on the relation between spin relaxation time and the characteristic hopping time. We derive kinetic equations to describe electrical spin orientation, dc spin-Hall effect, and spin galvanic effect in the transverse magnetic field. The generalized macroscopic conductivities describing these effects are calculated using percolation theory supported by numerical simulation. The conductivities change the sign at least once as functions of magnetic field for all values of the spin relaxation time.
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Submitted 10 May, 2018;
originally announced May 2018.
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Circular and magnetoinduced photocurrents in Weyl semimetals
Authors:
L. E. Golub,
E. L. Ivchenko
Abstract:
We develop a theory of the direct interband and indirect intraband photogalvanic effects in Weyl semimetals belonging to the gyrotropic classes with improper symmetry operations. At zero magnetic field, an excitation of such a material with circularly polarized light leads to a photocurrent whose direction depends on the light helicity. We show that in the semimetals of the C$_{2v}$ symmetry, an a…
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We develop a theory of the direct interband and indirect intraband photogalvanic effects in Weyl semimetals belonging to the gyrotropic classes with improper symmetry operations. At zero magnetic field, an excitation of such a material with circularly polarized light leads to a photocurrent whose direction depends on the light helicity. We show that in the semimetals of the C$_{2v}$ symmetry, an allowance for the tilt term in the effective Hamiltonian is enough to prevent cancellation of the photocurrent contributions from the Weyl cones of opposite chiralities. In the case of the C$_{4v}$ symmetry, in addition to the tilt it is necessary to include terms of the second- or third-order in the electron quasi-momentum. For indirect intraband transitions, the helicity-dependent photocurrent generated within each Weyl node takes on a universal value determined by the fundamental constants, the light frequency and electric field. We have complementarily investigated the magneto-gyrotropic photogalvanic effect, i.e. an appearance of a photocurrent under unpolarized excitation in a magnetic field. In quantized magnetic fields, the photocurrent is caused by optical transitions between the one-dimensional magnetic subbands. A value of the photocurrent is particularly high if one of the photocarriers is excited to the chiral subband with the energy below the cyclotron energy.
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Submitted 3 May, 2018; v1 submitted 7 March, 2018;
originally announced March 2018.
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Intersubband scattering in n-GaAs/AlGaAs wide quantum wells
Authors:
I. L. Drichko,
I. Yu. Smirnov,
M. O. Nestoklon,
A. V. Suslov,
D. Kamburov,
K. W. Baldwin,
L. N. Pfeiffer,
K. W. West,
L. E. Golub
Abstract:
Slow magnetooscilations of the conductivity are observed in a 75 nm wide quantum well at heating of the two-dimensional electrons by a high-intensity surface acoustic wave. These magnetooscillations are caused by intersubband elastic scattering between the symmetric and asymmetric subbands formed due to an electrostatic barrier in the center of the quantum well. The tunneling splitting between the…
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Slow magnetooscilations of the conductivity are observed in a 75 nm wide quantum well at heating of the two-dimensional electrons by a high-intensity surface acoustic wave. These magnetooscillations are caused by intersubband elastic scattering between the symmetric and asymmetric subbands formed due to an electrostatic barrier in the center of the quantum well. The tunneling splitting between these subbands as well as the intersubband scattering rate are determined.
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Submitted 11 January, 2018;
originally announced January 2018.
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Magneto-spatial dispersion of quantum wells
Authors:
L. V. Kotova,
V. N. Kats,
A. V. Platonov,
V. P. Kochereshko,
R. André,
L. E. Golub
Abstract:
Polarization conversion of light reflected from quantum wells governed by both magnetic field and light propagation direction is observed. We demonstrate that the polarization conversion is caused by the magneto-spatial dispersion in quantum wells which manifests itself in the reflection coefficient contribution bilinear in the in-plane components of the magnetic field and the light wavevector. Th…
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Polarization conversion of light reflected from quantum wells governed by both magnetic field and light propagation direction is observed. We demonstrate that the polarization conversion is caused by the magneto-spatial dispersion in quantum wells which manifests itself in the reflection coefficient contribution bilinear in the in-plane components of the magnetic field and the light wavevector. The magneto-spatial dispersion is shown to arise due to structure inversion asymmetry of the quantum wells. The effect is resonantly enhanced in the vicinity of the heavy-hole exciton. We show that microscopically the magneto-spatial dispersion is caused by the mixing of heavy- and light-hole states in the quantum well due to both orbital effect of the magnetic field and the in-plane hole motion. The degree of the structure inversion asymmetry is determined for GaAs/AlGaAs and CdTe quantum wells.
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Submitted 28 November, 2017;
originally announced November 2017.
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Circular and linear magnetic quantum ratchet effects in dual-grating-gate CdTe-based nanostructures
Authors:
P. Faltermeier,
G. V. Budkin,
S. Hubmann,
V. V. Bel'kov,
L. E. Golub,
E. L. Ivchenko,
Z. Adamus,
G. Karczewski,
T. Wojtowicz,
D. A. Kozlov,
D. Weiss,
S. D. Ganichev
Abstract:
We report on the observation and systematic study of polarization sensitive magnetic quantum ratchet effects induced by alternating electric fields in the terahertz frequency range. The effects are detected in (Cd,Mn)Te-based quantum well (QW) structures with inter-digitated dual-grating-gate (DGG) lateral superlattices. A dc electric current excited by cw terahertz laser radiation shows 1/B-perio…
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We report on the observation and systematic study of polarization sensitive magnetic quantum ratchet effects induced by alternating electric fields in the terahertz frequency range. The effects are detected in (Cd,Mn)Te-based quantum well (QW) structures with inter-digitated dual-grating-gate (DGG) lateral superlattices. A dc electric current excited by cw terahertz laser radiation shows 1/B-periodic oscillations with an amplitude much larger than the photocurrent at zero magnetic field. Variation of gate voltages applied to individual grating gates of the DGG enables us to change the degree and the sign of the lateral asymmetry in a controllable way. The data reveal that the photocurrent reflects the degree of lateral asymmetry induced by different gate potentials. We show that the magnetic ratchet photocurrent includes the Seebeck thermoratchet effect as well as the effects of "linear" and "circular" ratchets, which are sensitive to the corresponding polarization of the driving electromagnetic force. Theoretical analysis performed in the framework of semiclassical approach and taking into account Landau quantization describes the experimental results well.
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Submitted 16 October, 2017;
originally announced October 2017.
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Photocurrents in gyrotropic Weyl semimetals
Authors:
L. E. Golub,
E. L. Ivchenko,
B. Z. Spivak
Abstract:
We present results of a theoretical study of photocurrents in the Weyl semimetals belonging to the gyrotropic symmetry classes. We show that, in weakly gyrotropic symmetry classes C$_{nv}$ ($n = 3,4,6$), the circular photocurrent transverse to the incidence direction appears only with account, in the electron effective Hamiltonian, for both linear and quadratic or cubic in quasi-momentum spin-depe…
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We present results of a theoretical study of photocurrents in the Weyl semimetals belonging to the gyrotropic symmetry classes. We show that, in weakly gyrotropic symmetry classes C$_{nv}$ ($n = 3,4,6$), the circular photocurrent transverse to the incidence direction appears only with account, in the electron effective Hamiltonian, for both linear and quadratic or cubic in quasi-momentum spin-dependent terms as well as a spin-independent term resulting in the tilt of the cone dispersion. A polarization-independent magneto-induced photocurrent is predicted which is also allowed in gyrotropic systems only. For crystals of the C$_{2v}$ symmetry, we consider a microscopic mechanism of the photocurrent in a quantized magnetic field which is generated under direct optical transitions between the ground and the first excited magnetic subbands. It is shown that this current becomes nonzero with allowance for anisotropic tilt of the dispersion cones.
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Submitted 18 May, 2017; v1 submitted 12 May, 2017;
originally announced May 2017.
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Magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with a lateral asymmetric superlattice
Authors:
P. Faltermeier,
G. V. Budkin,
J. Unverzagt,
S. Hubmann,
A. Pfaller,
V. V. Bel'kov,
L. E. Golub,
E. L. Ivchenko,
Z. Adamus,
G. Karczewski,
T. Wojtowicz,
V. V. Popov,
D. V. Fateev,
D. A. Kozlov,
D. Weiss,
S. D. Ganichev
Abstract:
We report on the observation of magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with an asymmetric lateral dual grating gate superlattice subjected to an external magnetic field applied normal to the quantum well plane. A dc electric current excited by cw terahertz laser radiation shows 1/B-oscillations with an amplitude much larger as compared to the photocurr…
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We report on the observation of magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with an asymmetric lateral dual grating gate superlattice subjected to an external magnetic field applied normal to the quantum well plane. A dc electric current excited by cw terahertz laser radiation shows 1/B-oscillations with an amplitude much larger as compared to the photocurrent at zero magnetic field. We show that the photocurrent is caused by the combined action of a spatially periodic in-plane potential and the spatially modulated radiation due to the near field effects of light diffraction. Magnitude and direction of the photocurrent are determined by the degree of the lateral asymmetry controlled by the variation of voltages applied to the individual gates. The observed magneto-oscillations with enhanced photocurrent amplitude result from Landau quantization and, for (Cd,Mn)Te at low temperatures, from the exchange enhanced Zeeman splitting in diluted magnetic heterostructures. Theoretical analysis, considering the magnetic quantum ratchet effect in the framework of semiclassical approach, describes quite well the experimental results.
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Submitted 9 February, 2017;
originally announced February 2017.
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Intrinsic exciton states mixing and non-linear optical properties in transition metal dichalcogenide monolayers
Authors:
M. M. Glazov,
L. E. Golub,
G. Wang,
X. Marie,
T. Amand,
B. Urbaszek
Abstract:
Optical properties of transition metal dichalcogenides monolayers are controlled by the Wannier-Mott excitons forming a series of $1s$, $2s$, $2p$,... hydrogen-like states. We develop the theory of the excited excitonic states energy spectrum fine structure. We predict that $p$- and $s$-shell excitons are mixed due to the specific $D_{3h}$ point symmetry of the transition metal dichalcogenide mono…
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Optical properties of transition metal dichalcogenides monolayers are controlled by the Wannier-Mott excitons forming a series of $1s$, $2s$, $2p$,... hydrogen-like states. We develop the theory of the excited excitonic states energy spectrum fine structure. We predict that $p$- and $s$-shell excitons are mixed due to the specific $D_{3h}$ point symmetry of the transition metal dichalcogenide monolayers. Hence, both $s$- and $p$-shell excitons are active in both single- and two-photon processes providing an efficient mechanism of second harmonic generation. The corresponding contribution to the nonlinear susceptibility is calculated.
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Submitted 11 January, 2017; v1 submitted 21 October, 2016;
originally announced October 2016.
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Electrical spin orientation, spin-galvanic and spin-Hall effects in disordered two-dimensional systems
Authors:
D. S. Smirnov,
L. E. Golub
Abstract:
In disordered systems, the hopping conductivity regime is usually realized at low temperatures where spin-related phenomena differ strongly from the case of delocalized carriers. We develop the unified microscopic theory of current induced spin orientation, spin-galvanic and spin-Hall effects for the two-dimensional hopping regime. We show that the corresponding susceptibilities are proportional t…
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In disordered systems, the hopping conductivity regime is usually realized at low temperatures where spin-related phenomena differ strongly from the case of delocalized carriers. We develop the unified microscopic theory of current induced spin orientation, spin-galvanic and spin-Hall effects for the two-dimensional hopping regime. We show that the corresponding susceptibilities are proportional to each other and determined by the interplay between the drift and the diffusion spin currents. Estimations are made for realistic semiconductor heterostructures using the percolation theory. We show that the electrical spin polarization in the hopping regime increases exponentially with increase of the concentration of localization sites and may reach a few percents at the crossover from the hopping to the diffusion conductivity regime.
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Submitted 11 October, 2016;
originally announced October 2016.