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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1610.03473 (cond-mat)
[Submitted on 11 Oct 2016]

Title:Electrical spin orientation, spin-galvanic and spin-Hall effects in disordered two-dimensional systems

Authors:D. S. Smirnov, L. E. Golub
View a PDF of the paper titled Electrical spin orientation, spin-galvanic and spin-Hall effects in disordered two-dimensional systems, by D. S. Smirnov and L. E. Golub
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Abstract:In disordered systems, the hopping conductivity regime is usually realized at low temperatures where spin-related phenomena differ strongly from the case of delocalized carriers. We develop the unified microscopic theory of current induced spin orientation, spin-galvanic and spin-Hall effects for the two-dimensional hopping regime. We show that the corresponding susceptibilities are proportional to each other and determined by the interplay between the drift and the diffusion spin currents. Estimations are made for realistic semiconductor heterostructures using the percolation theory. We show that the electrical spin polarization in the hopping regime increases exponentially with increase of the concentration of localization sites and may reach a few percents at the crossover from the hopping to the diffusion conductivity regime.
Comments: 6 pages, 4 figures + Supplemental Material
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Disordered Systems and Neural Networks (cond-mat.dis-nn)
Cite as: arXiv:1610.03473 [cond-mat.mes-hall]
  (or arXiv:1610.03473v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1610.03473
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. Lett. 118, 116801 (2017)
Related DOI: https://doi.org/10.1103/PhysRevLett.118.116801
DOI(s) linking to related resources

Submission history

From: Dmitry Smirnov S [view email]
[v1] Tue, 11 Oct 2016 19:35:15 UTC (158 KB)
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