-
Metal-insulator transition induced by fluctuations of the magnetic potential in semiconductors with magnetic impurities
Authors:
E. Z. Meilikhov,
R. M. Farzetdinova
Abstract:
We investigate the metal-insulator transition occurring in semiconductors with magnetic impurities when lowering temperature. In contrast to the usually considered percolation transition in the non-uniform medium induced by the localization of charge carriers in the fluctuating \emph{electric} potential, the studied transition is connected with their localization in the fluctuating \emph{magnetic}…
▽ More
We investigate the metal-insulator transition occurring in semiconductors with magnetic impurities when lowering temperature. In contrast to the usually considered percolation transition in the non-uniform medium induced by the localization of charge carriers in the fluctuating \emph{electric} potential, the studied transition is connected with their localization in the fluctuating \emph{magnetic} potential produced by magnetized impurities (more accurately - in the combined fluctuating potential). When decreasing temperature, the magnetization of magnetic impurities in the semiconductor becomes higher and even at the invariable (temperature independent) amplitude of the electric potential, the magnetic component of the total potential increases. With increasing fluctuation amplitude, the Fermi level of charge carriers sinks deeper and deeper into the growing tail of density of states until it falls under the percolation level. For that, fluctuations of the total potential have to run up to some critical value. On reaching that value, the transition occurs from the metal conductivity to the activation one (the metal-insulator transition).
△ Less
Submitted 1 September, 2010;
originally announced September 2010.
-
High-temperature spin polarization of high-mobility charge carriers in hybrid metal-semiconductor structures
Authors:
E. Z. Meilikhov,
R. M. Farzetdinova
Abstract:
We consider magnetic properties of the planar structure consisting of a ferromagnetic metal, diluted magnetic semiconductor and the quantum well (by the example of the hybrid heterostructure Fe--Ga(Mn)As--InGaAs). In the framework of the mean-field theory, there is the significant amplification of the ferromagnetism induced by the ferromagnetic metal (Fe) in the system of magnetic impurities (Mn)…
▽ More
We consider magnetic properties of the planar structure consisting of a ferromagnetic metal, diluted magnetic semiconductor and the quantum well (by the example of the hybrid heterostructure Fe--Ga(Mn)As--InGaAs). In the framework of the mean-field theory, there is the significant amplification of the ferromagnetism induced by the ferromagnetic metal (Fe) in the system of magnetic impurities (Mn) due to their indirect interaction via the conductivity channel in the quantum well. As a result, the high-temperature ferromagnetism arises leading to the spin polarization of charge carriers (holes) localized in the quantum well and preserving their high mobility.
△ Less
Submitted 26 April, 2010;
originally announced April 2010.
-
Magnetic properties of nanosized diluted magnetic semiconductors with band splitting
Authors:
E. Z. Meilikhov,
R. M. Farzetdinova
Abstract:
The continual model of the nonuniform magnetism in thin films and wires of a diluted magnetic semiconductor is considered with taking into account the finite spin polarization of carriers responsible for the indirect interaction of magnetic impurities (e.g. via RKKY mechanism). Spatial distributions (across the film thickness or the wire radius) of the magnetizaton and carrier concentrations of…
▽ More
The continual model of the nonuniform magnetism in thin films and wires of a diluted magnetic semiconductor is considered with taking into account the finite spin polarization of carriers responsible for the indirect interaction of magnetic impurities (e.g. via RKKY mechanism). Spatial distributions (across the film thickness or the wire radius) of the magnetizaton and carrier concentrations of different spin orientations, as well as the temperature dependence of the average magnetization are determined as the solution of the nonlinear integral equation.
△ Less
Submitted 10 March, 2009;
originally announced March 2009.
-
Amplification of the induced ferromagnetism in diluted magnetic semiconductor
Authors:
E. Z. Meilikhov,
R. M. Farzetdinova
Abstract:
Magnetic properties of the planar structure consisting of a ferromagnetic metal and the diluted magnetic semiconductor are considered (by the example of the structure Fe/Ga(Mn)As, experimentally studied in [F. Maccherozzi, e.a., Phys. Rev. Lett., 101, 267201 (2008)]). In the framework of the mean field theory, we demonstrate the presence of the significant amplification of the ferromagnetism, in…
▽ More
Magnetic properties of the planar structure consisting of a ferromagnetic metal and the diluted magnetic semiconductor are considered (by the example of the structure Fe/Ga(Mn)As, experimentally studied in [F. Maccherozzi, e.a., Phys. Rev. Lett., 101, 267201 (2008)]). In the framework of the mean field theory, we demonstrate the presence of the significant amplification of the ferromagnetism, induced by the ferromagnetic metal in the near-interface semiconductor area, due to the indirect interaction of magnetic impurities. This results in the substantial expansion of the temperature range where the magnetization in the boundary semiconductor region exists, that might be important for possible practical applications.
△ Less
Submitted 10 March, 2009;
originally announced March 2009.
-
RKKY interaction of magnetic moments in nanosized systems
Authors:
E. Z. Meilikhov,
R. M. Farzetdinova
Abstract:
Nanosized spherical system of magnetic moments interacting indirectly via the RKKY mechanism is studied. The interaction energy that determines the temperature of the ferromagnetic ordering, depends strongly on the system size. Obtained in the mean-field approximation, dimensional and concentration dependencies of the Curie temperature testify to the necessity of taking into account the finite s…
▽ More
Nanosized spherical system of magnetic moments interacting indirectly via the RKKY mechanism is studied. The interaction energy that determines the temperature of the ferromagnetic ordering, depends strongly on the system size. Obtained in the mean-field approximation, dimensional and concentration dependencies of the Curie temperature testify to the necessity of taking into account the finite size of such systems to calculate their features. Results may concern both artificially constructed nanosystems and naturally arising formations (such as clusters of magnetic ions in diluted magnetic semiconductors, etc.).
△ Less
Submitted 17 October, 2006; v1 submitted 12 September, 2006;
originally announced September 2006.
-
Quasi-Two Dimensional Diluted Magnetic Semiconductors with Arbitrary Carrier Degeneracy
Authors:
E. Z Meilikhov,
R. M. Farzetdinova
Abstract:
In the framework of the generalized mean field theory, conditions for arising the ferromagnetic state in a two-dimensional diluted magnetic semiconductor and the features of that state are defined. RKKY-interaction of magnetic impurities is supposed. The spatial disorder of their arrangement and temperature alteration of the carrier degeneracy are taken into account.
In the framework of the generalized mean field theory, conditions for arising the ferromagnetic state in a two-dimensional diluted magnetic semiconductor and the features of that state are defined. RKKY-interaction of magnetic impurities is supposed. The spatial disorder of their arrangement and temperature alteration of the carrier degeneracy are taken into account.
△ Less
Submitted 29 August, 2006; v1 submitted 17 February, 2006;
originally announced February 2006.
-
Curie Temperature for Small World Ising Systems of Different Dimensions
Authors:
E. Z. Meilikhov,
R. M. Farzetdinova
Abstract:
For Small World Ising systems of different dimensions, "concentration" dependencies T_C(p) of the Curie temperature upon the fraction p of long-range links have been derived on a basis of simple physical considerations. We have found T_C(p) ~ 1/ln|p| for 1D, T_C(p) ~ p^{1/2} for 2D, and T_C(p) ~ p^{2/3} for 3D.
For Small World Ising systems of different dimensions, "concentration" dependencies T_C(p) of the Curie temperature upon the fraction p of long-range links have been derived on a basis of simple physical considerations. We have found T_C(p) ~ 1/ln|p| for 1D, T_C(p) ~ p^{1/2} for 2D, and T_C(p) ~ p^{2/3} for 3D.
△ Less
Submitted 20 May, 2005;
originally announced May 2005.
