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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1004.4425 (cond-mat)
[Submitted on 26 Apr 2010]

Title:High-temperature spin polarization of high-mobility charge carriers in hybrid metal-semiconductor structures

Authors:E. Z. Meilikhov, R.M. Farzetdinova
View a PDF of the paper titled High-temperature spin polarization of high-mobility charge carriers in hybrid metal-semiconductor structures, by E. Z. Meilikhov and 1 other authors
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Abstract:We consider magnetic properties of the planar structure consisting of a ferromagnetic metal, diluted magnetic semiconductor and the quantum well (by the example of the hybrid heterostructure Fe--Ga(Mn)As--InGaAs). In the framework of the mean-field theory, there is the significant amplification of the ferromagnetism induced by the ferromagnetic metal (Fe) in the system of magnetic impurities (Mn) due to their indirect interaction via the conductivity channel in the quantum well. As a result, the high-temperature ferromagnetism arises leading to the spin polarization of charge carriers (holes) localized in the quantum well and preserving their high mobility.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1004.4425 [cond-mat.mes-hall]
  (or arXiv:1004.4425v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1004.4425
arXiv-issued DOI via DataCite
Journal reference: J. Appl. Phys., 107, 114314 (2010)
Related DOI: https://doi.org/10.1063/1.3436559
DOI(s) linking to related resources

Submission history

From: Evgeny Meilikhov [view email]
[v1] Mon, 26 Apr 2010 08:17:15 UTC (39 KB)
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