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Cavity-Altered Superconductivity
Authors:
Itai Keren,
Tatiana A. Webb,
Shuai Zhang,
Jikai Xu,
Dihao Sun,
Brian S. Y. Kim,
Dongbin Shin,
Songtian S. Zhang,
Junhe Zhang,
Giancarlo Pereira,
Juntao Yao,
Takuya Okugawa,
Marios H. Michael,
James H. Edgar,
Stuart Wolf,
Matthew Julian,
Rohit P. Prasankumar,
Kazuya Miyagawa,
Kazushi Kanoda,
Genda Gu,
Matthew Cothrine,
David Mandrus,
Michele Buzzi,
Andrea Cavalleri,
Cory R. Dean
, et al. (7 additional authors not shown)
Abstract:
Is it feasible to alter the ground state properties of a material by engineering its electromagnetic environment? Inspired by theoretical predictions, experimental realizations of such cavity-controlled properties without optical excitation are beginning to emerge. Here, we devised and implemented a novel platform to realize cavity-altered materials. Single crystals of hyperbolic van der Waals (vd…
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Is it feasible to alter the ground state properties of a material by engineering its electromagnetic environment? Inspired by theoretical predictions, experimental realizations of such cavity-controlled properties without optical excitation are beginning to emerge. Here, we devised and implemented a novel platform to realize cavity-altered materials. Single crystals of hyperbolic van der Waals (vdW) compounds provide a resonant electromagnetic environment with enhanced density of photonic states and superior quality factor. We interfaced hexagonal boron nitride (hBN) with the molecular superconductor $κ$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br ($κ$-ET). The frequencies of infrared (IR) hyperbolic modes of hBN match the IR-active carbon-carbon stretching molecular resonance of ($κ$-ET) implicated in superconductivity. Nano-optical data supported by first-principles molecular Langevin dynamics simulations confirm the presence of resonant coupling between the hBN hyperbolic cavity modes and the carbon-carbon stretching mode in ($κ$-ET). Meissner effect measurements via magnetic force microscopy demonstrate a strong suppression of superfluid density near the hBN/($κ$-ET) interface. Non-resonant control heterostructures, including RuCl$_3$/($κ$-ET) and hBN/$\text{Bi}_2\text{Sr}_2\text{CaCu}_2\text{O}_{8+x}$, do not display the superfluid suppression. These observations suggest that hBN/($κ$-ET) realizes a cavity-altered superconducting ground state. This work highlights the potential of dark cavities devoid of external photons for engineering electronic ground state properties of materials using IR-active phonons.
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Submitted 9 June, 2025; v1 submitted 22 May, 2025;
originally announced May 2025.
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Magnetization Dependent In-plane Anomalous Hall Effect in a Low-dimensional System
Authors:
I-Hsuan Kao,
Ravi Kumar Bandapelli,
Zhenhong Cui,
Shuchen Zhang,
Jian Tang,
Tiema Qian,
Souvik Sasmal,
Aalok Tiwari,
Mei-Tung Chen,
Rahul Rao,
Jiahan Li,
James H. Edgar,
Kenji Watanabe,
Takashi Taniguchi,
Ni Ni,
Su-Yang Xu,
Qiong Ma,
Shubhayu Chatterjee,
Jyoti Katoch,
Simranjeet Singh
Abstract:
Anomalous Hall Effect (AHE) response in magnetic systems is typically proportional to an out-of-plane magnetization component because of the restriction imposed by system symmetries, which demands that the magnetization, applied electric field, and induced Hall current are mutually orthogonal to each other. Here, we report experimental realization of an unconventional form of AHE in a low-dimensio…
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Anomalous Hall Effect (AHE) response in magnetic systems is typically proportional to an out-of-plane magnetization component because of the restriction imposed by system symmetries, which demands that the magnetization, applied electric field, and induced Hall current are mutually orthogonal to each other. Here, we report experimental realization of an unconventional form of AHE in a low-dimensional heterostructure, wherein the Hall response is not only proportional to the out-of-plane magnetization component but also to the in-plane magnetization component. By interfacing a low-symmetry topological semimetal (TaIrTe4) with the ferromagnetic insulator (Cr2Ge2Te6), we create a low-dimensional magnetic system, where only one mirror symmetry is preserved. We show that as long as the magnetization has a finite component in the mirror plane, this last mirror symmetry is broken, allowing the emergence of an AHE signal proportional to in-plane magnetization. Our experiments, conducted on multiple devices, reveal a gate-voltage-dependent AHE response, suggesting that the underlying mechanisms responsible for the Hall effect in our system can be tuned via electrostatic gating. A minimal microscopic model constrained by the symmetry of the heterostructure shows that both interfacial spin-orbit coupling and time-reversal symmetry breaking via the exchange interaction from magnetization are responsible for the emergence of the in-plane AHE. Our work highlights the importance of system symmetries and exchange interaction in low-dimensional heterostructures for designing novel and tunable Hall effects in layered quantum systems.
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Submitted 10 May, 2025;
originally announced May 2025.
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Nanoscale Quantum Imaging of Spin Dynamics using a Hybrid 2D/3D System
Authors:
Alex L. Melendez,
Ruotian Gong,
Guanghui He,
Yan Wang,
Yueh-Chun Wu,
Thomas Poirier,
Steven Randolph,
Sujoy Ghosh,
Liangbo Liang,
Stephen Jesse,
An-Ping Li,
Joshua T. Damron,
Benjamin J. Lawrie,
James H. Edgar,
Ivan V. Vlassiouk,
Chong Zu,
Huan Zhao
Abstract:
Spin defects in solids offer promising platforms for quantum sensing and memory due to their long coherence times and compatibility with quantum networks. Here, we integrate a single nitrogen-vacancy (NV) center in diamond with scanning probe microscopy to discover, read out, and spatially map arbitrary spin-based quantum sensors at the nanoscale. Using the boron vacancy (V$_\mathrm{B}^-$) center…
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Spin defects in solids offer promising platforms for quantum sensing and memory due to their long coherence times and compatibility with quantum networks. Here, we integrate a single nitrogen-vacancy (NV) center in diamond with scanning probe microscopy to discover, read out, and spatially map arbitrary spin-based quantum sensors at the nanoscale. Using the boron vacancy (V$_\mathrm{B}^-$) center in hexagonal boron nitride$\unicode{x2013}$an emerging two-dimensional spin system$\unicode{x2013}$as a model, we detect its electron spin resonance indirectly via changes in the spin relaxation time ($T_1$) of a nearby NV center, eliminating the need for optical excitation or fluorescence detection of the V$_\mathrm{B}^-$. Cross-relaxation between NV and V$_\mathrm{B}^-$ ensembles significantly reduces NV $T_1$, enabling quantitative nanoscale mapping of defect densities beyond the optical diffraction limit and clear resolution of hyperfine splitting in isotopically enriched h$^{10}$B$^{15}$N. Our method demonstrates interactions between 3D and 2D spin sensors, establishing NV centers as versatile probes for characterizing otherwise inaccessible spin defects.
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Submitted 8 June, 2025; v1 submitted 13 April, 2025;
originally announced April 2025.
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The Importance of Pure Dephasing in the Optical Response of Excitons in High-quality van der Waals Heterostructures
Authors:
Anabel Atash Kahlon,
Matan Meshulam,
Tomer Eini,
Thomas Poirier,
James H. Edgar,
Seth Ariel Tongay,
Itai Epstein
Abstract:
Excitons in monolayer transition metal dichalcogenides (TMDs) dominate their optical response due to exceptionally large binding energies arising from their two-dimensional nature. Several theoretical models have been proposed to describe this excitonic behavior, however, it remains unclear which model most accurately captures the underlying physical properties of the response. In this work, we ex…
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Excitons in monolayer transition metal dichalcogenides (TMDs) dominate their optical response due to exceptionally large binding energies arising from their two-dimensional nature. Several theoretical models have been proposed to describe this excitonic behavior, however, it remains unclear which model most accurately captures the underlying physical properties of the response. In this work, we experimentally measure the optical response of high-quality monolayer TMD heterostructures and compare the results with the different theoretical models to address this uncertainty. We find that in high-quality heterostructures, quantum mechanical interactions in the form of pure dephasing plays a dominant role, which has been challenging to isolate experimentally in previous studies. Furthermore, accounting for an additional decay rate to the commonly used radiative and non-radiative rates is found to be important for the accurate description of the excitonic response. These findings establish a robust framework for understanding and predicting the optical properties of TMD-based heterostructures, crucial for both fundamental research and optoelectronic applications.
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Submitted 9 February, 2025;
originally announced February 2025.
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Charge state tuning of spin defects in hexagonal boron nitride
Authors:
Jules Fraunié,
Tristan Clua-Provost,
Sébastien Roux,
Zhao Mu,
Adrien Delpoux,
Grégory Seine,
Delphine Lagarde,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Thomas Poirier,
James H. Edgar,
Jeremie Grisolia,
Benjamin Lassagne,
Alain Claverie,
Vincent Jacques,
Cedric Robert
Abstract:
Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to develop two-dimensional (2D) quantum sensors. In this letter, we demonstrate the tunability of the charge state of boron vacancies in ultrathin hBN layers, revealing a transition from the optically active singly negativ…
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Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to develop two-dimensional (2D) quantum sensors. In this letter, we demonstrate the tunability of the charge state of boron vacancies in ultrathin hBN layers, revealing a transition from the optically active singly negatively charged state to the optically inactive doubly negatively charged state when sandwiched between graphene electrodes. Notably, there is a photoluminescence quenching of a few percent upon the application of a bias voltage between the electrodes. Our findings emphasize the critical importance of considering the charge state of optically active defects in 2D materials, while also showing that the negatively charged boron vacancy remains robust against external perpendicular electric fields. This stability makes it a promising candidate for integration into various van der Waals heterostructures.
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Submitted 30 January, 2025;
originally announced January 2025.
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Magnetic imaging under high pressure with a spin-based quantum sensor integrated in a van der Waals heterostructure
Authors:
Z. Mu,
J. Fraunié,
A. Durand,
S. Clément,
A. Finco,
J. Rouquette,
A. Hadj-Azzem,
N. Rougemaille,
J. Coraux,
J. Li,
T. Poirier,
J. H. Edgar,
I. C. Gerber,
X. Marie,
B. Gil,
G. Cassabois,
C. Robert,
V. Jacques
Abstract:
Pressure is a powerful thermodynamic parameter for tuning the magnetic properties of van der Waals magnets owing to their weak interlayer bonding. However, local magnetometry measurements under high pressure still remain elusive for this important class of emerging materials. Here we introduce a method enabling in situ magnetic imaging of van der Waals magnets under high pressure with sub-micron s…
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Pressure is a powerful thermodynamic parameter for tuning the magnetic properties of van der Waals magnets owing to their weak interlayer bonding. However, local magnetometry measurements under high pressure still remain elusive for this important class of emerging materials. Here we introduce a method enabling in situ magnetic imaging of van der Waals magnets under high pressure with sub-micron spatial resolution. Our approach relies on a quantum sensing platform based on boron-vacancy (V$_\text{B}^-$) centers in hexagonal boron nitride (hBN), which can be placed in atomic contact of any type of two-dimensional (2D) material within a van der Waals heterostructure. We first show that the V$_\text{B}^-$ center can be used as a magnetic field sensor up to pressures of a few GPa, a pressure range for which the properties of a wide variety of van der Waals magnets are efficiently altered. We then use V$_\text{B}^-$ centers in a thin hBN layer to perform magnetic imaging of a van der Waals magnet under pressure. As a proof of concept, we study the pressure-dependent magnetization in micrometer-sized flakes of $1T$-CrTe$_2$, whose evolution is explained by a shift of the Curie temperature. Besides providing a new path for studying pressure-induced phase transitions in van der Waals magnets, this work also opens up interesting perspectives for exploring the physics of 2D superconductors under pressure via local measurements of the Meissner effect.
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Submitted 7 January, 2025;
originally announced January 2025.
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Probing Stress and Magnetism at High Pressures with Two-Dimensional Quantum Sensors
Authors:
Guanghui He,
Ruotian Gong,
Zhipan Wang,
Zhongyuan Liu,
Jeonghoon Hong,
Tongxie Zhang,
Ariana L. Riofrio,
Zachary Rehfuss,
Mingfeng Chen,
Changyu Yao,
Thomas Poirier,
Bingtian Ye,
Xi Wang,
Sheng Ran,
James H. Edgar,
Shixiong Zhang,
Norman Y. Yao,
Chong Zu
Abstract:
Pressure serves as a fundamental tuning parameter capable of drastically modifying all properties of matter. The advent of diamond anvil cells (DACs) has enabled a compact and tabletop platform for generating extreme pressure conditions in laboratory settings. However, the limited spatial dimensions and ultrahigh pressures within these environments present significant challenges for conventional s…
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Pressure serves as a fundamental tuning parameter capable of drastically modifying all properties of matter. The advent of diamond anvil cells (DACs) has enabled a compact and tabletop platform for generating extreme pressure conditions in laboratory settings. However, the limited spatial dimensions and ultrahigh pressures within these environments present significant challenges for conventional spectroscopy techniques. In this work, we integrate optical spin defects within a thin layer of two-dimensional (2D) materials directly into the high-pressure chamber, enabling an in situ quantum sensing platform for mapping local stress and magnetic environments up to 4~GPa. Compared to nitrogen-vacancy (NV) centers embedded in diamond anvils, our 2D sensors exhibit around three times stronger response to local stress and provide nanoscale proximity to the target sample in heterogeneous devices. We showcase the versatility of our approach by imaging both stress gradients within the high-pressure chamber and a pressure-driven magnetic phase transition in a room-temperature self-intercalated van der Waals ferromagnet, Cr$_{1+δ}$Te$_2$. Our work demonstrates an integrated quantum sensing device for high-pressure experiments, offering potential applications in probing pressure-induced phenomena such as superconductivity, magnetism, and mechanical deformation.
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Submitted 6 January, 2025;
originally announced January 2025.
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Growth of hexagonal BN crystals by traveling-solvent floating zone
Authors:
Eli Zoghlin,
Juliette Plo,
Gaihua Ye,
Cynthia Nnokwe,
Reina Gomez,
Austin Ferrenti,
Satya Kushwaha,
Rui He,
Stephen D. Wilson,
Pierre Valvin,
Bernard Gil,
Guillaume Cassabois,
James H. Edgar,
Tyrel M. McQueen
Abstract:
Large, high-purity single-crystals of hexagonal BN (h-BN) are essential for exploiting its many desirable and interesting properties. Here, we demonstrate via X-ray tomography, X-ray diffraction and scanning electron microscopy that h-BN crystals can be grown by traveling-solvent floating-zone (TSFZ). The diameters of grown boules range from 3 - 5 mm with lengths from 2 - 10 mm. Tomography indicat…
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Large, high-purity single-crystals of hexagonal BN (h-BN) are essential for exploiting its many desirable and interesting properties. Here, we demonstrate via X-ray tomography, X-ray diffraction and scanning electron microscopy that h-BN crystals can be grown by traveling-solvent floating-zone (TSFZ). The diameters of grown boules range from 3 - 5 mm with lengths from 2 - 10 mm. Tomography indicates variable grain sizes within the boules, with the largest having areas of $\approx$ 1 mm $\times$ 2 mm and thickness $\approx$ 0.5 mm. Although the boules contain macroscale flux inclusions, the h-BN lattice itself is of high quality for samples grown under optimized conditions. The currently optimized growth procedure employs an Fe flux, moderate N$_2$ pressure ($P_{N2} \approx$ 6 bar), and a growth rate of 0.1 mm/h. Raman spectroscopy for an optimized sample gives an average linewidth of 7.7(2) cm$^{-1}$ for the E$_{\mathrm{2g}}$ intralayer mode at 1365.46(4) cm$^{-1}$ and 1.0(1) cm$^{-1}$ for the E$_{\mathrm{2g}}$ interlayer shear mode at 51.78(9) cm$^{-1}$. The corresponding photoluminescence spectrum shows sharp phonon-assisted free exciton peaks and minimal signal in the energy range corresponding to carbon-related defects ($E$ = 3.9 4.1 eV). Our work demonstrates the viability of growing h-BN by the TSFZ technique, thereby opening a new route towards larger, high-quality crystals and advancing the state of h-BN related research.
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Submitted 8 April, 2025; v1 submitted 22 December, 2024;
originally announced December 2024.
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Hall signal-dominated microwave transmission through graphene-loaded waveguides
Authors:
Scott Dietrich,
Arash Akbari-Sharbaf,
James H. Edgar,
Alex Roubos,
Matthew Freeman,
Lloyd W. Engel
Abstract:
Microwave transmission line spectroscopy is used to observe the integer quantum Hall effect in two samples of monolayer graphene with different geometries that are resistively-coupled to a coplanar waveguide. We find plateaus in transmitted power that do not vary significantly with microwave frequency but are significantly different for two samples due to their shape. With each drop in transmitted…
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Microwave transmission line spectroscopy is used to observe the integer quantum Hall effect in two samples of monolayer graphene with different geometries that are resistively-coupled to a coplanar waveguide. We find plateaus in transmitted power that do not vary significantly with microwave frequency but are significantly different for two samples due to their shape. With each drop in transmitted power corresponding to an additional quantum Hall edge mode that short the transmission line to ground, these well-known quanta of conductance allow us to calibrate the sensitivity of the devices. One sample with short contact regions matched the sensitivity expected when considering only the quantum Hall conductance of $νe^2/h$; another sample with long contact regions demonstrated a nearly three-fold enhancement in sensitivity. We model this result with a purely resistive circuit that introduces an additional resistance to explain the increased sensitivity.
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Submitted 23 October, 2024;
originally announced October 2024.
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On the origin of anomalous hysteresis in graphite/boron nitride transistors
Authors:
Dacen Waters,
Derek Waleffe,
Ellis Thompson,
Esmeralda Arreguin-Martinez,
Jordan Fonseca,
Thomas Poirier,
James H. Edgar,
Kenji Watanabe,
Takashi Taniguchi,
Xiaodong Xu,
David Cobden,
Matthew Yankowitz
Abstract:
Field-effect devices constructed by stacking flakes of van der Waals (vdW) materials, with hexagonal boron nitride (hBN) playing the role of gate dielectric, often exhibit virtually no hysteresis in their characteristics. This permits exquisitely detailed studies of diverse gate-voltage-tuned phenomena in vdW devices. Recently, however, a dramatic form of gate hysteresis, sometimes called the "gat…
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Field-effect devices constructed by stacking flakes of van der Waals (vdW) materials, with hexagonal boron nitride (hBN) playing the role of gate dielectric, often exhibit virtually no hysteresis in their characteristics. This permits exquisitely detailed studies of diverse gate-voltage-tuned phenomena in vdW devices. Recently, however, a dramatic form of gate hysteresis, sometimes called the "gate doesn't work" (GDW) or "electron ratchet" effect, has been seen in certain individual vdW devices that seem otherwise unexceptional. When it occurs, this hysteresis phenomenon is striking and robust, yet it is difficult to reliably reproduce between devices and, largely as a result, its origin remains disputed. Most devices where it has been seen have a bilayer graphene channel and nominal rotational alignment between the graphene and hBN, which has engendered explanations based on properties of bilayer graphene combined with moiré effects. Here, we report our studies of the phenomenon observed in devices that have multilayer graphene channels. We find that the effect can occur in devices with graphite channels that have many more than two graphene layers, in which case it is unambiguously associated with just one surface of the graphite. It can also survive to room temperature, occur in the absence of intentional rotational alignment with hBN, persist when a monolayer of WSe2 is inserted between the graphene and hBN, and exhibit continuous relaxation on timescales of hours or longer. These observations impose strong constraints on the origin of this puzzling phenomenon, which has exciting potential applications if it can be mastered.
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Submitted 3 October, 2024;
originally announced October 2024.
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Electrical Spectroscopy of Polaritonic Nanoresonators
Authors:
Sebastián Castilla,
Hitesh Agarwal,
Ioannis Vangelidis,
Yuliy Bludov,
David Alcaraz Iranzo,
Adrià Grabulosa,
Matteo Ceccanti,
Mikhail I. Vasilevskiy,
Roshan Krishna Kumar,
Eli Janzen,
James H. Edgar,
Kenji Watanabe,
Takashi Taniguchi,
Nuno M. R. Peres,
Elefterios Lidorikis,
Frank H. L. Koppens
Abstract:
One of the most captivating properties of polaritons is their capacity to confine light at the nanoscale. This confinement is even more extreme in two-dimensional (2D) materials. 2D polaritons have been investigated by optical measurements using an external photodetector. However, their effective spectrally resolved electrical detection via far-field excitation remains unexplored. This fact hinder…
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One of the most captivating properties of polaritons is their capacity to confine light at the nanoscale. This confinement is even more extreme in two-dimensional (2D) materials. 2D polaritons have been investigated by optical measurements using an external photodetector. However, their effective spectrally resolved electrical detection via far-field excitation remains unexplored. This fact hinders their potential exploitation in crucial applications such as sensing molecules and gases, hyperspectral imaging and optical spectrometry, banking on their potential for integration with silicon technologies. Herein, we present the first electrical spectroscopy of polaritonic nanoresonators based on a high-quality 2D-material heterostructure, which serves at the same time as the photodetector and the polaritonic platform. We employ metallic nanorods to create hybrid nanoresonators within the hybrid plasmon-phonon polaritonic medium in the mid and long-wave infrared ranges. Subsequently, we electrically detect these resonators by near-field coupling to a graphene pn-junction. The nanoresonators simultaneously present a record of lateral confinement and high-quality factors of up to 200, exhibiting prominent peaks in the photocurrent spectrum, particularly at the underexplored lower reststrahlen band of hBN. We exploit the geometrical and gate tunability of these nanoresonators to investigate their impact on the photocurrent spectrum and the polaritonic's waveguided modes. This work opens a venue for studying this highly tunable and complex hybrid system, as well as for using it in compact platforms for sensing and photodetection applications.
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Submitted 27 September, 2024;
originally announced September 2024.
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Determining van der Waals materials' optical and polaritonic properties using cryogenic FTIR micro-spectroscopy
Authors:
Siddharth Nandanwar,
Aditya Desai,
S. Maryam Vaghefi Esfidani,
Tristan McMillan,
Eli Janzen,
James H. Edgar,
Thomas G. Folland
Abstract:
Van-der-Waals materials have been shown to support numerous exotic polaritonic phenomena originating from their layered structures and associated vibrational and electronic properties. This includes emergent polaritonic phenomena, including hyperbolicity and exciton-polariton formation. However, many van-der-Waals materials' unique properties are most prominent at cryogenic temperatures. This pres…
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Van-der-Waals materials have been shown to support numerous exotic polaritonic phenomena originating from their layered structures and associated vibrational and electronic properties. This includes emergent polaritonic phenomena, including hyperbolicity and exciton-polariton formation. However, many van-der-Waals materials' unique properties are most prominent at cryogenic temperatures. This presents a particular challenge for polaritonics research, as reliable optical constant data is required for understanding light-matter coupling. For infrared polaritonics (3-100um), the small size of exfoliated flakes makes conventional ellipsometry impossible. This paper presents a cryogenic Fourier transform infrared microscope design constructed entirely from off-the-shelf components and fitting procedures for determining optical constants. We use this microscope to present the first temperature-dependent characterization of the optical properties of hexagonal boron nitride grown with isotopically pure boron. We show that Fabry Perot-type resonances close to the transverse optical phonon show the key temperature-dependent tuning of several parameters. Our full analysis of the infrared dielectric function shows small but significant tuning of the optical constants, which is highly consistent with Raman data from the literature. We then use this dielectric data to perform and analyze the polariton propagation properties, which agree extremely well with published cryogenic scattering-type nearfield microscopy results. In addition to the insights gained into hyperbolic polaritons in hBN, our paper represents a transferable framework for characterizing exfoliated infrared polaritonic materials and other infrared devices. This could accelerate discoveries in other material systems, especially those that are spatially inhomogeneous or cannot be prepared as large single crystals.
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Submitted 21 August, 2024;
originally announced August 2024.
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Intrinsic high-fidelity spin polarization of charged vacancies in hexagonal boron nitride
Authors:
Wonjae Lee,
Vincent S. Liu,
Zhelun Zhang,
Sangha Kim,
Ruotian Gong,
Xinyi Du,
Khanh Pham,
Thomas Poirier,
Zeyu Hao,
James H. Edgar,
Philip Kim,
Chong Zu,
Emily J. Davis,
Norman Y. Yao
Abstract:
The negatively charged boron vacancy ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN) has garnered significant attention among defects in two-dimensional materials. This owes, in part, to its deterministic generation, well-characterized atomic structure, and optical polarizability at room temperature. We investigate the latter through extensive measurements probing both the ground an…
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The negatively charged boron vacancy ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN) has garnered significant attention among defects in two-dimensional materials. This owes, in part, to its deterministic generation, well-characterized atomic structure, and optical polarizability at room temperature. We investigate the latter through extensive measurements probing both the ground and excited state polarization dynamics. We develop a semiclassical model based on these measurements that predicts a near-unity degree of spin polarization, surpassing other solid-state spin defects under ambient conditions. Building upon our model, we include the presence of nuclear spin degrees of freedom adjacent to the $\mathrm{V}_{\mathrm{B}}^-$ and perform a comprehensive set of Lindbladian numerics to investigate the hyperfine-induced polarization of the nuclear spins. Our simulations predict a number of important features that emerge as a function of magnetic field which are borne out by experiment.
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Submitted 17 June, 2024;
originally announced June 2024.
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Isotope substitution and polytype control for point defects identification: the case of the ultraviolet color center in hexagonal boron nitride
Authors:
J. Plo,
A. Pershin,
S. Li,
T. Poirier,
E. Janzen,
H. Schutte,
M. Tian,
M. Wynn,
S. Bernard,
A. Rousseau,
A. Ibanez,
P. Valvin,
W. Desrat,
T. Michel,
V. Jacques,
B. Gil,
A. Kaminska,
N. Wan,
J. H. Edgar,
A. Gali,
G. Cassabois
Abstract:
Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and optoelectronic devices. The control of single color centers is at the basis of advanced applications for quantum technologies. Unintentional defects can also be detrimental to the crystalline structure and hinder the deve…
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Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and optoelectronic devices. The control of single color centers is at the basis of advanced applications for quantum technologies. Unintentional defects can also be detrimental to the crystalline structure and hinder the development of novel materials. Whatever the research perspective, the identification of defects is a key but complicated, and often long-standing issue. Here, we present a general methodology to identify point defects by combining isotope substitution and polytype control, with a systematic comparison between experiments and first-principles calculations. We apply this methodology to hexagonal boron nitride (hBN) and its ubiquitous color center emitting in the ultraviolet spectral range. From isotopic purification of the host hBN matrix, a local vibrational mode of the defect is uncovered, and isotope-selective carbon doping proves that this mode belongs to a carbon-based center. Then, by varying the stacking sequence of the host hBN matrix, we unveil different optical responses to hydrostatic pressure for the non-equivalent configurations of this ultraviolet color center. We conclude that this defect is a carbon dimer in the honeycomb lattice of hBN. Our results show that tuning the stacking sequence in different polytypes of a given crystal provides unique fingerprints contributing to the identification of defects in 2D materials.
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Submitted 31 May, 2024;
originally announced May 2024.
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Unconventional Unidirectional Magnetoresistance in vdW Heterostructures
Authors:
I-Hsuan Kao,
Junyu Tang,
Gabriel Calderon Ortiz,
Menglin Zhu,
Sean Yuan,
Rahul Rao,
Jiahan Li,
James H. Edgar,
Jiaqiang Yan,
David G. Mandrus,
Kenji Watanabe,
Takashi Taniguchi,
Jinwoo Hwang,
Ran Cheng,
Jyoti Katoch,
Simranjeet Singh
Abstract:
Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic layer, refers to a change in the longitudinal resistance upon the reversal of magnetization, which typically originates from the interaction of spin-current and ma…
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Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic layer, refers to a change in the longitudinal resistance upon the reversal of magnetization, which typically originates from the interaction of spin-current and magnetization at the interface. Because of UMR s linear dependence on applied charge current and magnetization, it can be used to electrically read the magnetization state. However, in conventional spin source materials, the spin polarization of an electric field induced spin current is restricted to be in the film plane and hence the ensuing UMR can only respond to the in plane component of the magnetization. On the other hand, magnets with perpendicular magnetic anisotropy (PMA) are highly desired for magnetic memory and spin-logic devices, while the electrical read out of PMA magnets through UMR is critically missing. Here, we report the discovery of an unconventional UMR in bilayer heterostructures of a topological semimetal (WTe2) and a PMA ferromagnetic insulator (Cr2Ge2Te6, CGT), which allows to electrically read the up and down magnetic states of the CGT layer by measuring the longitudinal resistance. Our theoretical calculations based on a tight binding model show that the unconventional UMR originates from the interplay of crystal symmetry breaking in WTe2 and magnetic exchange interaction across the WTe2 and CGT interface. Combining with the ability of WTe2 to obtain magnetic field free switching of the PMA magnets, our discoveries open an exciting pathway to achieve two terminal magnetic memory devices that operate solely on the spin orbit torque and UMR, which is critical for developing next-generation non volatile and low power consumption data storage technologies.
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Submitted 17 May, 2024;
originally announced May 2024.
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Exciton self-trapping in twisted hexagonal boron nitride homostructures
Authors:
Sébastien Roux,
Christophe Arnold,
Etienne Carré,
Alexandre Plaud,
Lei Ren,
Frédéric Fossard,
Nicolas Horezan,
Eli Janzen,
James H. Edgar,
Camille Maestre,
Bérangère Toury,
Catherine Journet,
Vincent Garnier,
Philippe Steyer,
Takashi Taniguchi,
Kenji Watanabe,
Cédric Robert,
Xavier Marie,
Annick Loiseau,
Julien Barjon
Abstract:
One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence and time-resolved cathodoluminescence experiments to study how excitons interact with the inter…
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One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence and time-resolved cathodoluminescence experiments to study how excitons interact with the interface between two twisted hexagonal boron nitride (hBN) crystals with various angles. An efficient capture of free excitons by the interface is demonstrated, which leads to a population of long-lived and interface-localized (2D) excitons. Temperature dependent experiments indicate that for high twist angles, these excitons localized at the interface further undergo a selftrapping. It consists in a distortion of the lattice around the exciton on which the exciton traps itself. Our results suggest that this exciton-interface interaction causes the broad 4-eV optical emission of highly twisted hBN-hBN structures. Exciton self-trapping is finally discussed as a common feature of sp2 hybridized boron nitride polytypes and nanostructures due to the ionic nature of the B-N bond and the small size of their excitons.
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Submitted 27 February, 2025; v1 submitted 15 May, 2024;
originally announced May 2024.
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Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride
Authors:
T. Clua-Provost,
Z. Mu,
A. Durand,
C. Schrader,
J. Happacher,
J. Bocquel,
P. Maletinsky,
J. Fraunié,
X. Marie,
C. Robert,
G. Seine,
E. Janzen,
J. H. Edgar,
B. Gil,
G. Cassabois,
V. Jacques
Abstract:
The negatively-charged boron vacancy (V$_\text{B}^-$) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) quantum sensing units. Such developments require a precise understanding of the spin-dependent optical response of V$_\text{B}^-$ centers, which still remains poorly documented despite its key role for sensing application…
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The negatively-charged boron vacancy (V$_\text{B}^-$) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) quantum sensing units. Such developments require a precise understanding of the spin-dependent optical response of V$_\text{B}^-$ centers, which still remains poorly documented despite its key role for sensing applications. Here we investigate the spin-dependent photodynamics of V$_\text{B}^-$ centers in hBN by a series of time-resolved photoluminescence (PL) measurements. We first introduce a robust all-optical method to infer the spin-dependent lifetime of the excited states and the electron spin polarization of V$_\text{B}^-$ centers under optical pumping. Using these results, we then analyze PL time traces recorded at different optical excitation powers with a seven-level model of the V$_\text{B}^-$ center and we extract all the rates involved in the spin-dependent optical cycles, both under ambient conditions and at liquid helium temperature. These findings are finally used to study the impact of a vector magnetic field on the optical response. More precisely, we analyze PL quenching effects resulting from electron spin mixing induced by the magnetic field component perpendicular to the V$_\text{B}^-$ quantization axis. All experimental results are well reproduced by the seven-level model, illustrating its robustness to describe the spin-dependent photodymanics of V$_\text{B}^-$ centers. This work provides important insights into the properties of V$_\text{B}^-$ centers in hBN, which are valuable for future developments of 2D quantum sensing units.
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Submitted 22 April, 2024;
originally announced April 2024.
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Electroluminescence and Energy Transfer Mediated by Hyperbolic Polaritons
Authors:
L. Abou-Hamdan,
A. Schmitt,
R. Bretel,
S. Rossetti,
M. Tharrault,
D. Mele,
A. Pierret,
M. Rosticher,
T. Taniguchi,
K. Watanabe,
C. Maestre,
C. Journet,
B. Toury,
V. Garnier,
P. Steyer,
J. H. Edgar,
E. Janzen,
J-M. Berroir,
G. Fève,
G. Ménard,
B. Plaçais,
C. Voisin,
J-P. Hugonin,
E. Bailly,
B. Vest
, et al. (4 additional authors not shown)
Abstract:
Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devices (e.g., light-emitting diodes). In principle, electroluminescence can lead to mid-infrared (mid-IR) emission of confined light-matter excitations ca…
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Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devices (e.g., light-emitting diodes). In principle, electroluminescence can lead to mid-infrared (mid-IR) emission of confined light-matter excitations called phonon-polaritons, resulting from the coupling of photons with crystal lattice vibrations (optical phonons). In particular, phonon-polaritons arising in the van der Waals crystal hexagonal boron nitride (hBN) exhibit hyperbolic dispersion, which enhances light-matter coupling. For this reason, electroluminescence of hyperbolic phonon-polaritons (HPhPs) has been proposed as an explanation for the peculiar radiative energy transfer within hBN-encapsulated graphene transistors. However, since HPhPs are confined, they are inaccessible in the far-field, so that any hint of electroluminescence is only based on indirect electronic signatures and needs to be confirmed by direct observation. Here, we demonstrate far-field mid-IR (λ = 6.5 μm) electroluminescence of HPhPs excited by strongly biased high-mobility graphene within a van der Waals heterostructure, and we quantify the associated radiative energy transfer through the material. The presence of HPhPs is revealed via far-field mid-IR spectroscopy due to their elastic scattering at discontinuities in the heterostructure. The associated radiative flux is quantified by mid-IR pyrometry of the substrate receiving the energy. This radiative energy transfer is shown to be reduced in hBN with nanoscale inhomogeneities, demonstrating the central role of the electromagnetic environment in this process.
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Submitted 2 December, 2024; v1 submitted 12 October, 2023;
originally announced October 2023.
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Hyperbolic phonon-polariton electroluminescence in graphene-hBN van der Waals heterostructures
Authors:
Qiushi Guo,
Iliya Esin,
Cheng Li,
Chen Chen,
Song Liu,
James H. Edgar,
Selina Zhou,
Eugene Demler,
Gil Refael,
Fengnian Xia
Abstract:
Phonon-polaritons are electromagnetic waves resulting from the coherent coupling of photons with optical phonons in polar dielectrics. Due to their exceptional ability to confine electric fields to deep subwavelength scales with low loss, they are uniquely poised to enable a suite of applications beyond the reach of conventional photonics, such as sub-diffraction imaging and near-field energy tran…
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Phonon-polaritons are electromagnetic waves resulting from the coherent coupling of photons with optical phonons in polar dielectrics. Due to their exceptional ability to confine electric fields to deep subwavelength scales with low loss, they are uniquely poised to enable a suite of applications beyond the reach of conventional photonics, such as sub-diffraction imaging and near-field energy transfer. The conventional approach to exciting phonon-polaritons through optical methods, however, necessitates costly mid-infrared and terahertz coherent light sources along with near-field scanning probes, and generally leads to low excitation efficiency due to the substantial momentum mismatch between phonon-polaritons and free-space photons. Here, we demonstrate that under proper conditions, phonon-polaritons can be excited all-electrically by flowing charge carriers. Specifically, in hexagonal boron nitride (hBN)/graphene heterostructures, by electrically driving charge carriers in ultra-high-mobility graphene out of equilibrium, we observe bright electroluminescence of hBN's hyperbolic phonon-polaritons (HPhPs) at mid-IR frequencies. The HPhP electroluminescence shows a temperature and carrier density dependence distinct from black-body or super-Planckian thermal emission. Moreover, the carrier density dependence of HPhP electroluminescence spectra reveals that HPhP electroluminescence can arise from both inter-band transition and intra-band Cherenkov radiation of charge carriers in graphene. The HPhP electroluminescence offers fundamentally new avenues for realizing electrically-pumped, tunable mid-IR and THz phonon-polariton lasers, and efficient cooling of electronic devices.
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Submitted 5 October, 2023;
originally announced October 2023.
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Deep Subwavelength Topological Edge State in a Hyperbolic Medium
Authors:
Lorenzo Orsini,
Hanan Herzig Sheinfux,
Yandong Li,
Seojoo Lee,
Gian Marcello Andolina,
Orazio Scarlatella,
Matteo Ceccanti,
Karuppasamy Soundarapandian,
Eli Janzen,
James H. Edgar,
Gennady Shvets,
Frank H. L. Koppens
Abstract:
Topological nanophotonics presents the potential for cutting-edge photonic systems, with a core aim revolving around the emergence of topological edge states. These states are primed to propagate robustly while embracing deep subwavelength confinement that defies diffraction limits. Such attributes make them particularly appealing for nanoscale applications, where achieving these elusive states ha…
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Topological nanophotonics presents the potential for cutting-edge photonic systems, with a core aim revolving around the emergence of topological edge states. These states are primed to propagate robustly while embracing deep subwavelength confinement that defies diffraction limits. Such attributes make them particularly appealing for nanoscale applications, where achieving these elusive states has remained challenging. We unveil the first experimental proof of deep subwavelength topological edge states by implementing periodic modulation of hyperbolic phonon polaritons within a Van der Waals heterostructure. This finding represents a significant milestone in the field of nanophotonics, and it can be directly extended to and hybridized with other Van der Waals materials in various applications. The extensive scope for material substitution facilitates broadened operational frequency ranges, streamlined integration of diverse polaritonic materials, and compatibility with electronic and excitonic systems.
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Submitted 4 October, 2023;
originally announced October 2023.
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Bound states in the continuum and long-range coupling of polaritons in hexagonal boron nitride nanoresonators
Authors:
Harsh Gupta,
Giacomo Venturi,
Tatiana Contino,
Eli Janzen,
James H. Edgar,
Francesco de Angelis,
Andrea Toma,
Antonio Ambrosio,
Michele Tamagnone
Abstract:
Bound states in the continuum (BICs) garnered significant for their potential to create new types of nanophotonic devices. Most prior demonstrations were based on arrays of dielectric resonators, which cannot be miniaturized beyond the diffraction limit, reducing the applicability of BICs for advanced functions. Here, we demonstrate BICs and quasi-BICs based on high-quality factor phonon-polariton…
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Bound states in the continuum (BICs) garnered significant for their potential to create new types of nanophotonic devices. Most prior demonstrations were based on arrays of dielectric resonators, which cannot be miniaturized beyond the diffraction limit, reducing the applicability of BICs for advanced functions. Here, we demonstrate BICs and quasi-BICs based on high-quality factor phonon-polariton resonances in isotopically pure h11BN and how these states can be supported by periodic arrays of nanoresonators with sizes much smaller than the wavelength. We theoretically illustrate how BICs emerge from the band structure of the arrays and verify both numerically and experimentally the presence of these states and enhanced quality factor. Furthermore, we identify and characterize simultaneously quasi-BICs and bright states. Our method can be generalized to create a large number of optical states and to tune their coupling with the environment, paving the way to miniaturized nanophotonic devices with more advanced functions.
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Submitted 21 September, 2023;
originally announced September 2023.
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Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride
Authors:
T. Clua-Provost,
A. Durand,
Z. Mu,
T. Rastoin,
J. Fraunié,
E. Janzen,
H. Schutte,
J. H. Edgar,
G. Seine,
A. Claverie,
X. Marie,
C. Robert,
B. Gil,
G. Cassabois,
V. Jacques
Abstract:
We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields a simplified and well-resolved hyperfine structure of V$_\text{B}^-$ centers, while purification with $^{10}$B leads to narrower ESR linewidths. These results…
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We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields a simplified and well-resolved hyperfine structure of V$_\text{B}^-$ centers, while purification with $^{10}$B leads to narrower ESR linewidths. These results establish isotopically-purified h$^{10}$B$^{15}$N crystals as the optimal host material for future use of V$_\text{B}^-$ spin defects in quantum technologies. Capitalizing on these findings, we then demonstrate optically-induced polarization of $^{15}$N nuclei in h$^{10}$B$^{15}$N, whose mechanism relies on electron-nuclear spin mixing in the V$_\text{B}^-$ ground state. This work opens up new prospects for future developments of spin-based quantum sensors and simulators on a two-dimensional material platform.
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Submitted 13 July, 2023;
originally announced July 2023.
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Isotope engineering for spin defects in van der Waals materials
Authors:
Ruotian Gong,
Xinyi Du,
Eli Janzen,
Vincent Liu,
Zhongyuan Liu,
Guanghui He,
Bingtian Ye,
Tongcang Li,
Norman Y. Yao,
James H. Edgar,
Erik A. Henriksen,
Chong Zu
Abstract:
Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal b…
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Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN), we grow isotopically purified $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ crystals. Compared to $\mathrm{V}_{\mathrm{B}}^-$ in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded $\mathrm{V}_{\mathrm{B}}^-$ spin transitions as well as extended coherence time $T_2$ and relaxation time $T_1$. For quantum sensing, $\mathrm{V}_{\mathrm{B}}^-$ centers in our $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ samples exhibit a factor of $4$ ($2$) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the $\mathrm{V}_{\mathrm{B}}^-$ hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor ${}^{15}\mathrm{N}$ nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials.
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Submitted 3 January, 2024; v1 submitted 12 July, 2023;
originally announced July 2023.
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Boron and nitrogen isotope effects on hexagonal boron nitride properties
Authors:
E. Janzen,
H. Schutte,
J. Plo,
A. Rousseau,
T. Michel,
W. Desrat,
P. Valvin,
V. Jacques,
G. Cassabois,
B. Gil,
J. H. Edgar
Abstract:
The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising two-dimensional material for electronic, optoelectronic, nanophotonic, and quantum devices. Here we report on the changes in hBN's properties induced by isotopic purification in both boron and nitrogen. Previous studies on isotopically pure hBN have focused on purifyin…
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The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising two-dimensional material for electronic, optoelectronic, nanophotonic, and quantum devices. Here we report on the changes in hBN's properties induced by isotopic purification in both boron and nitrogen. Previous studies on isotopically pure hBN have focused on purifying the boron isotope concentration in hBN from its natural concentration (approximately 20 at$\%$ $^{10}$B, 80 at$\%$ $^{11}$B) while using naturally abundant nitrogen (99.6 at$\%$ $^{14}$N, 0.4 at$\%$ $^{15}$N), i.e. almost pure $^{14}$N. In this study, we extend the class of isotopically-purified hBN crystals to $^{15}$N. Crystals in the four configurations, namely h$^{10}$B$^{14}$N, h$^{11}$B$^{14}$N, h$^{10}$B$^{15}$N, and h$^{11}$B$^{15}$N, were grown by the metal flux method using boron and nitrogen single isotope ($>99\%$) enriched sources, with nickel plus chromium as the solvent. In-depth Raman and photoluminescence spectroscopies demonstrate the high quality of the monoisotopic hBN crystals with vibrational and optical properties of the $^{15}$N-purified crystals at the state of the art of currently available $^{14}$N-purified hBN. The growth of high-quality h$^{10}$B$^{14}$N, h$^{11}$B$^{14}$N, h$^{10}$B$^{15}$N, and h$^{11}$B$^{15}$N opens exciting perspectives for thermal conductivity control in heat management, as well as for advanced functionalities in quantum technologies.
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Submitted 23 June, 2023;
originally announced June 2023.
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Thermopower in hBN/graphene/hBN superlattices
Authors:
Victor H. Guarochico-Moreira,
Christopher R. Anderson,
Vladimir Fal'ko,
Irina V. Grigorieva,
Endre Tóvári,
Matthew Hamer,
Roman Gorbachev,
Song Liu,
James H. Edgar,
Alessandro Principi,
Andrey V. Kretinin,
Ivan J. Vera-Marun
Abstract:
Thermoelectric effects are highly sensitive to the asymmetry in the density of states around the Fermi energy and can be exploited as probes of the electronic structure. We experimentally study thermopower in high-quality monolayer graphene, within heterostructures consisting of complete hBN encapsulation and 1D edge contacts, where the graphene and hBN lattices are aligned. When graphene is align…
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Thermoelectric effects are highly sensitive to the asymmetry in the density of states around the Fermi energy and can be exploited as probes of the electronic structure. We experimentally study thermopower in high-quality monolayer graphene, within heterostructures consisting of complete hBN encapsulation and 1D edge contacts, where the graphene and hBN lattices are aligned. When graphene is aligned to one of the hBN layers, we demonstrate the presence of additional sign reversals in the thermopower as a function of carrier density, directly evidencing the presence of the moiré superlattice. We show that the temperature dependence of the thermopower enables the assessment of the role of built-in strain variation and van Hove singularities and hints at the presence of Umklapp electron-electron scattering processes. As the thermopower peaks around the neutrality point, this allows to probe the energy spectrum degeneracy. Further, when graphene is double-aligned with the top and bottom hBN crystals, the thermopower exhibits features evidencing multiple cloned Dirac points caused by the differential super-moiré lattice. For both cases we evaluate how well the thermopower agrees with Mott's equation. Finally, we show the same superlattice device can exhibit a temperature-driven thermopower reversal from positive to negative and vice versa, by controlling the carrier density. The study of thermopower provides an alternative approach to study the electronic structure of 2D superlattices, whilst offering opportunities to engineer the thermoelectric response on these heterostructures.
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Submitted 14 June, 2023;
originally announced June 2023.
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Optically-active spin defects in few-layer thick hexagonal boron nitride
Authors:
A. Durand,
T. Clua-Provost,
F. Fabre,
P. Kumar,
J. Li,
J. H. Edgar,
P. Udvarhelyi,
A. Gali,
X. Marie,
C. Robert,
J. M. Gérard,
B. Gil,
G. Cassabois,
V. Jacques
Abstract:
Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this work, we first demonstrate that the electron spin resonance frequencies of boron vacancy centres (V$_\text{B}^-$) can be detected optically in the limit of few-atomic-layer thick hBN flake…
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Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this work, we first demonstrate that the electron spin resonance frequencies of boron vacancy centres (V$_\text{B}^-$) can be detected optically in the limit of few-atomic-layer thick hBN flakes despite the nanoscale proximity of the crystal surface that often leads to a degradation of the stability of solid-state spin defects. We then analyze the variations of the electronic spin properties of V$_\text{B}^-$ centres with the hBN thickness with a focus on (i) the zero-field splitting parameters, (ii) the optically-induced spin polarization rate and (iii) the longitudinal spin relaxation time. This work provides important insights into the properties of V$_\text{B}^-$ centres embedded in ultrathin hBN flakes, which are valuable for future developments of foil-based quantum sensing technologies.
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Submitted 9 May, 2023; v1 submitted 24 April, 2023;
originally announced April 2023.
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Chemically detaching hBN crystals grown at atmospheric pressure and high temperature for high-performance graphene devices
Authors:
Taoufiq Ouaj,
Leonard Kramme,
Marvin Metzelaars,
Jiahan Li,
Kenji Watanabe,
Takashi Taniguchi,
James H. Edgar,
Bernd Beschoten,
Paul Kögerler,
Christoph Stampfer
Abstract:
In this work, we report on the growth of hexagonal boron nitride (hBN) crystals from an iron flux at atmospheric pressure and high temperature and demonstrate that (i) the entire sheet of hBN crystals can be detached from the metal in a single step using hydrochloric acid and that (ii) these hBN crystals allow the fabrication of high carrier mobility graphene devices. By combining spatially-resolv…
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In this work, we report on the growth of hexagonal boron nitride (hBN) crystals from an iron flux at atmospheric pressure and high temperature and demonstrate that (i) the entire sheet of hBN crystals can be detached from the metal in a single step using hydrochloric acid and that (ii) these hBN crystals allow the fabrication of high carrier mobility graphene devices. By combining spatially-resolved confocal Raman spectroscopy and electrical transport measurements, we confirm the excellent quality of these crystals for high-performance hBN-graphene-based van der Waals heterostructures. The full width at half maximum of the graphene Raman 2D peak is as low as 16 cm$^{-1}$, and the room temperature charge carrier mobilitiy is around 80000 cm$^2$/(Vs) at a carrier density 1$\times$10$^{12}$cm$^{-12}$. This is fully comparable with devices of similar dimensions fabricated using crystalline hBN synthesized by the high pressure and high temperature method. Finally, we show that for exfoliated high-quality hBN flakes with a thickness between 20 nm and 40 nm the line width of the hBN Raman peak, in contrast to the graphene 2D line width, is not useful for benchmarking hBN in high mobility graphene devices.
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Submitted 23 August, 2023; v1 submitted 6 April, 2023;
originally announced April 2023.
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A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields
Authors:
P. Udvarhelyi,
T. Clua-Provost,
A. Durand,
J. Li,
J. H. Edgar,
B. Gil,
G. Cassabois,
V. Jacques,
A. Gali
Abstract:
The boron-vacancy spin defect ($\text{V}_\text{B}^{-}$) in hexagonal boron nitride (hBN) has a great potential as a quantum sensor in a two-dimensional material that can directly probe various external perturbations in atomic-scale proximity to the quantum sensing layer. Here, we apply first principles calculations to determine the coupling of the $\text{V}_\text{B}^{-}$ electronic spin to strain…
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The boron-vacancy spin defect ($\text{V}_\text{B}^{-}$) in hexagonal boron nitride (hBN) has a great potential as a quantum sensor in a two-dimensional material that can directly probe various external perturbations in atomic-scale proximity to the quantum sensing layer. Here, we apply first principles calculations to determine the coupling of the $\text{V}_\text{B}^{-}$ electronic spin to strain and electric fields. Our work unravels the interplay between local piezoelectric and elastic effects contributing to the final response to the electric fields. The theoretical predictions are then used to analyse optically detected magnetic resonance (ODMR) spectra recorded on hBN crystals containing different densities of $\text{V}_\text{B}^{-}$ centres. We prove that the orthorhombic zero-field splitting parameter results from local electric fields produced by surrounding charge defects. By providing calculations of the spin-strain and spin-electric field couplings, this work paves the way towards applications of $\text{V}_\text{B}^{-}$ centres for quantitative electric field imaging and quantum sensing under pressure.
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Submitted 2 April, 2023;
originally announced April 2023.
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Unexpected catalytic activity of nanorippled graphene
Authors:
P. Z. Sun,
W. Q. Xiong,
A. Bera,
I. Timokhin,
Z. F. Wu,
A. Mishchenko,
M. C. Sellers,
B. L. Liu,
H. M. Cheng,
E. Janzen,
J. H. Edgar,
I. V. Grigorieva,
S. J. Yuan,
A. K. Geim
Abstract:
Graphite is one of the most chemically inert materials. Its elementary constituent, monolayer graphene, is generally expected to inherit most of the parent material's properties including chemical inertness. Here we show that, unlike graphite, defect-free monolayer graphene exhibits a strong activity with respect to splitting molecular hydrogen, which is comparable to that of metallic and other kn…
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Graphite is one of the most chemically inert materials. Its elementary constituent, monolayer graphene, is generally expected to inherit most of the parent material's properties including chemical inertness. Here we show that, unlike graphite, defect-free monolayer graphene exhibits a strong activity with respect to splitting molecular hydrogen, which is comparable to that of metallic and other known catalysts for this reaction. We attribute the unexpected catalytic activity to surface corrugations (nanoscale ripples), a conclusion supported by theory. Nanoripples are likely to play a role in other chemical reactions involving graphene and, because nanorippling is inherent to atomically thin crystals, can be important for two dimensional materials in general.
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Submitted 14 March, 2023;
originally announced March 2023.
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Control of the phonon band gap with isotopes in hexagonal boron nitride
Authors:
Paul Zeiger,
Jordan Hachtel,
Dominik Legut,
Eli Janzen,
Juri Barthel,
James H. Edgar,
Leslie J. Allen,
Ján Rusz
Abstract:
The isotopic mass of constituent elements of materials has a well-known effect on the energy of vibrational modes. By means of monochromated scanning transmission electron microscopy we have experimentally studied the phonon bandstructure of hexagonal BN, where a phonon band gap appears between in-plane optical phonon modes and the lower energy part of the phonon spectrum. The size of the phonon b…
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The isotopic mass of constituent elements of materials has a well-known effect on the energy of vibrational modes. By means of monochromated scanning transmission electron microscopy we have experimentally studied the phonon bandstructure of hexagonal BN, where a phonon band gap appears between in-plane optical phonon modes and the lower energy part of the phonon spectrum. The size of the phonon band gap can be manipulated by the isotopic mass of the boron. While in $^{11}$BN the phonon band gap is about 7 meV wide, in $^{10}$BN the gap nearly closes, being an order of magnitude smaller (below 0.5 meV). This opens exciting options for manipulating terahertz wave propagation through isotopically structured devices having otherwise no interfaces between chemically distinct components.
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Submitted 6 March, 2023; v1 submitted 26 February, 2023;
originally announced February 2023.
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Transverse hypercrystals formed by periodically modulated phonon-polaritons
Authors:
Hanan Herzig Sheinfux,
Minwoo Jung,
Lorenzo Orsini,
Matteo Ceccanti,
Aditya Mahalanabish,
Daniel Martinez-Cercós,
Iacopo Torre,
David Barcons Ruiz,
Eli Janzen,
James H. Edgar,
Valerio Pruneri,
Gennady Shvets,
Frank H. L. Koppens
Abstract:
Photonic crystals and metamaterials are two overarching paradigms for manipulating light. Combining the two approaches leads to hypercrystals: hyperbolic dispersion metamaterials that undergo periodic modulation and mix photonic-crystal-like aspects with hyperbolic dispersion physics. So far, there has been limited experimental realization of hypercrystals due to various technical and design const…
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Photonic crystals and metamaterials are two overarching paradigms for manipulating light. Combining the two approaches leads to hypercrystals: hyperbolic dispersion metamaterials that undergo periodic modulation and mix photonic-crystal-like aspects with hyperbolic dispersion physics. So far, there has been limited experimental realization of hypercrystals due to various technical and design constraints. Here, we create nanoscale hypercrystals with lattice constants ranging from 25 nm to 160 nm and measure their collective Bloch modes and dispersion with scattering nearfield microscopy. We demonstrate for the first time dispersion features such as negative group velocity, indicative of bandfolding, and signatures of sharp density of states peaks, expected for hypercrystals (and not for ordinary polaritonic crystals). These density peaks connect our findings to the theoretical prediction of an extremely rich hypercrystal bandstructure emerging even in geometrically simple lattices. These features make hypercrystals both fundamentally interesting, as well as of potential use to engineering nanoscale light-matter interactions.
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Submitted 1 November, 2022;
originally announced November 2022.
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Negative refraction in hyperbolic hetero-bicrystals
Authors:
A. J. Sternbach,
S. L. Moore,
A. Rikhter,
S. Zhang,
R. Jing,
Y. Shao,
B. S. Y. Kim,
S. Xu,
S. Liu,
J. H. Edgar,
A. Rubio,
C. Dean,
J. Hone,
M. M. Fogler,
D. N. Basov
Abstract:
We visualized negative refraction of phonon polaritons, which occurs at the interface between two natural crystals. The polaritons - hybrids of infrared photons and lattice vibrations - form collimated rays that display negative refraction when passing through a planar interface between the two hyperbolic van der Waals materials: molybdenum oxide ($MoO_3$) and isotopically pure hexagonal boron nit…
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We visualized negative refraction of phonon polaritons, which occurs at the interface between two natural crystals. The polaritons - hybrids of infrared photons and lattice vibrations - form collimated rays that display negative refraction when passing through a planar interface between the two hyperbolic van der Waals materials: molybdenum oxide ($MoO_3$) and isotopically pure hexagonal boron nitride ($h^{11}BN$). At a special frequency $ω_0$, these rays can circulate along closed diamond-shaped trajectories. We have shown that polariton eigenmodes display regions of both positive and negative dispersion interrupted by multiple gaps that result from polaritonic level repulsion and strong coupling.
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Submitted 7 July, 2023; v1 submitted 29 September, 2022;
originally announced September 2022.
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Magnetic imaging with spin defects in hexagonal boron nitride
Authors:
P. Kumar,
F. Fabre,
A. Durand,
T. Clua-Provost,
J. Li,
J. H. Edgar,
N. Rougemaille,
J. Coraux,
X. Marie,
P. Renucci,
C. Robert,
I. Robert-Philip,
B. Gil,
G. Cassabois,
A. Finco,
V. Jacques
Abstract:
Optically-active spin defects hosted in hexagonal boron nitride (hBN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstrate quantitative magnetic imaging with hBN flakes doped with negatively-charged boron-vacancy (V$_{\rm B}^-$) centers through neutron irradiation. As a proof-of-concept, we image the magnetic field produced by CrTe$_2$,…
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Optically-active spin defects hosted in hexagonal boron nitride (hBN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstrate quantitative magnetic imaging with hBN flakes doped with negatively-charged boron-vacancy (V$_{\rm B}^-$) centers through neutron irradiation. As a proof-of-concept, we image the magnetic field produced by CrTe$_2$, a van der Waals ferromagnet with a Curie temperature slightly above $300$ K. Compared to other quantum sensors embedded in 3D materials, the advantages of the hBN-based magnetic sensor described in this work are its ease of use, high flexibility and, more importantly, its ability to be placed in close proximity to a target sample. Such a sensing unit will likely find numerous applications in 2D materials research by offering a simple way to probe the physics of van der Waals heterostructures.
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Submitted 21 July, 2022;
originally announced July 2022.
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High quality nanocavities through multimodal confinement of hyperbolic polaritons in hexagonal boron nitride
Authors:
Hanan Herzig Sheinfux,
Lorenzo Orsini,
Minwoo Jung,
Iacopo Torre,
Matteo Ceccanti,
Simone Marconi,
Rinu Maniyara,
David Barcons Ruiz,
Alexander Hötger,
Ricardo Bertini,
Sebastián Castilla,
Niels C. H. Hesp,
Eli Janzen,
Alexander Holleitner,
Valerio Pruneri,
James H. Edgar,
Gennady Shvets,
Frank H. L. Koppens
Abstract:
A conventional optical cavity supports modes which are confined because they are unable to leak out of the cavity. Bound state in continuum (BIC) cavities are an unconventional alternative, where light can leak out, but is confined by multimodal destructive interference. BICs are a general wave phenomenon, of particular interest to optics, but BICs and multimodal interference have never been demon…
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A conventional optical cavity supports modes which are confined because they are unable to leak out of the cavity. Bound state in continuum (BIC) cavities are an unconventional alternative, where light can leak out, but is confined by multimodal destructive interference. BICs are a general wave phenomenon, of particular interest to optics, but BICs and multimodal interference have never been demonstrated at the nanoscale. Here, we demonstrate the first nanophotonic cavities based on BIC-like multimodal interference. This novel confinement mechanism for deep sub-wavelength light shows orders of magnitude improvement in several confinement metrics. Specifically, we obtain cavity volumes below 100x100x3nm^3 with quality factors about 100, with extreme cases having 23x23x3nm^3 volumes or quality factors above 400. Key to our approach, is the use of pristine crystalline hyperbolic dispersion media (HyM) which can support large momentum excitations with relatively low losses. Making a HyM cavity is complicated by the additional modes that appear in a HyM. Ordinarily, these serve as additional channels for leakage, reducing cavity performance. But, in our experiments, we find a BIC-like cavity confinement enhancement effect, which is intimately related to the ray-like nature of HyM excitations. In fact, the quality factors of our cavities exceed the maximum that is possible in the absence of higher order modes. The alliance of HyM with BICs in our work yields a radically novel way to confine light and is expected to have far reaching consequences wherever strong optical confinement is utilized, from ultra-strong light-matter interactions, to mid-IR nonlinear optics and a range of sensing applications.
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Submitted 31 December, 2023; v1 submitted 17 February, 2022;
originally announced February 2022.
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Decoherence of V$_{\rm B}^{-}$ spin defects in monoisotopic hexagonal boron nitride
Authors:
A. Haykal,
R. Tanos,
N. Minotto,
A. Durand,
F. Fabre,
J. Li,
J. H. Edgar,
V. Ivady,
A. Gali,
T. Michel,
A. Dréau,
B. Gil,
G. Cassabois,
V. Jacques
Abstract:
Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either $^{10}$B or $^{11}$B to investigate the isotope-dependent properties of a spin defect featuring a broadband photoluminescence signal in the near infrared. By analyzing the hyperfine structure…
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Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either $^{10}$B or $^{11}$B to investigate the isotope-dependent properties of a spin defect featuring a broadband photoluminescence signal in the near infrared. By analyzing the hyperfine structure of the spin defect while changing the boron isotope, we first unambiguously confirm that it corresponds to the negatively-charged boron-vacancy center (${\rm V}_{\rm B}^-$). We then show that its spin coherence properties are slightly improved in $^{10}$B-enriched samples. This is supported by numerical simulations employing cluster correlation expansion methods, which reveal the importance of the hyperfine Fermi contact term for calculating the coherence time of point defects in hBN. Using cross-relaxation spectroscopy, we finally identify dark electron spin impurities as an additional source of decoherence. This work provides new insights into the properties of ${\rm V}_{\rm B}^-$ spin defects, which are valuable for the future development of hBN-based quantum sensing foils.
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Submitted 19 December, 2021;
originally announced December 2021.
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Graphene's non-equilibrium fermions reveal Doppler-shifted magnetophonon resonances accompanied by Mach supersonic and Landau velocity effects
Authors:
M. T. Greenaway,
P. Kumaravadivel,
J. Wengraf,
L. A. Ponomarenko,
A. I. Berdyugin. J. Li,
J. H. Edgar,
R. Krishna Kumar,
A. K. Geim,
L. Eaves
Abstract:
Oscillatory magnetoresistance measurements on graphene have revealed a wealth of novel physics. These phenomena are typically studied at low currents. At high currents, electrons are driven far from equilibrium with the atomic lattice vibrations so that their kinetic energy can exceed the thermal energy of the phonons. Here, we report three non-equilibrium phenomena in monolayer graphene at high c…
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Oscillatory magnetoresistance measurements on graphene have revealed a wealth of novel physics. These phenomena are typically studied at low currents. At high currents, electrons are driven far from equilibrium with the atomic lattice vibrations so that their kinetic energy can exceed the thermal energy of the phonons. Here, we report three non-equilibrium phenomena in monolayer graphene at high currents: (i) a "Doppler-like" shift and splitting of the frequencies of the transverse acoustic (TA) phonons emitted when the electrons undergo inter-Landau level (LL) transitions; (ii) an intra-LL Mach effect with the emission of TA phonons when the electrons approach supersonic speed, and (iii) the onset of elastic inter-LL transitions at a critical carrier drift velocity, analogous to the superfluid Landau velocity. All three quantum phenomena can be unified in a single resonance equation. They offer avenues for research on out-of-equilibrium phenomena in other two-dimensional fermion systems.
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Submitted 19 October, 2021;
originally announced October 2021.
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Radiative lifetime of free excitons in hexagonal boron nitride
Authors:
Sébastien Roux,
Christophe Arnold,
Fulvio Paleari,
Lorenzo Sponza,
Eli Janzen,
James H. Edgar,
Bérangère Toury,
Catherine Journet,
Vincent Garnier,
Philippe Steyer,
Takashi Taniguchi,
Kenji Watanabe,
François Ducastelle,
Annick Loiseau,
Julien Barjon
Abstract:
Using a new time-resolved cathodoluminescence system dedicated to the UV spectral range, we present a first estimate of the radiative lifetime of free excitons in hBN at room temperature. This is carried out from a single experiment giving both the absolute luminescence intensity under continuous excitation and the decay time of free excitons in the time domain. The radiative lifetime of indirect…
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Using a new time-resolved cathodoluminescence system dedicated to the UV spectral range, we present a first estimate of the radiative lifetime of free excitons in hBN at room temperature. This is carried out from a single experiment giving both the absolute luminescence intensity under continuous excitation and the decay time of free excitons in the time domain. The radiative lifetime of indirect excitons in hBN is equal to 27 ns, which is much shorter than in other indirect bandgap semiconductors. This is explained by the close proximity of the electron and the hole in the exciton complex, and also by the small energy difference between indirect and direct excitons. The unusually high luminescence efficiency of hBN for an indirect bandgap is therefore semi-quantitatively understood.
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Submitted 2 July, 2021;
originally announced July 2021.
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Cyclotron resonance overtones and near-field magnetoabsorption via terahertz Bernstein modes in graphene
Authors:
D. A. Bandurin,
E. Mönch,
K. Kapralov,
I. Y. Phinney,
K. Lindner,
S. Liu,
J. H. Edgar,
I. A. Dmitriev,
P. Jarillo-Herrero,
D. Svintsov,
S. D. Ganichev
Abstract:
Two-dimensional electron systems subjected to a perpendicular magnetic field absorb electromagnetic radiation via the cyclotron resonance (CR). Here we report a qualitative breach of this well-known behaviour in graphene. Our study of the terahertz photoresponse reveals a resonant burst at the main overtone of the CR, drastically exceeding the signal detected at the position of the ordinary CR. In…
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Two-dimensional electron systems subjected to a perpendicular magnetic field absorb electromagnetic radiation via the cyclotron resonance (CR). Here we report a qualitative breach of this well-known behaviour in graphene. Our study of the terahertz photoresponse reveals a resonant burst at the main overtone of the CR, drastically exceeding the signal detected at the position of the ordinary CR. In accordance with the developed theory, the photoresponse dependencies on the magnetic field, doping level, and sample geometry suggest that the origin of this anomaly lies in the near-field magnetoabsorption facilitated by the Bernstein modes, ultra-slow magnetoplasmonic excitations reshaped by nonlocal electron dynamics. Close to the CR harmonics, these modes are characterized by a flat dispersion and a diverging plasmonic density of states that strongly amplifies the radiation absorption. Besides fundamental interest, our experimental results and developed theory show that the radiation absorption via nonlocal collective modes can facilitate a strong photoresponse, a behaviour potentially useful for infrared and terahertz technology.
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Submitted 1 July, 2021; v1 submitted 3 June, 2021;
originally announced June 2021.
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Fizeau Drag in Graphene Plasmonics
Authors:
Y. Dong,
L. Xiong,
I. Y. Phinney,
Z. Sun,
R. Jing,
A. S. McLeod,
S. Zhang,
S. Liu,
F. L. Ruta,
H. Gao,
Z. Dong,
R. Pan,
J. H. Edgar,
P. Jarillo-Herrero,
L. S. Levitov,
A. J. Millis,
M. M. Fogler,
D. A. Bandurin,
D. N. Basov
Abstract:
Dragging of light by moving dielectrics was predicted by Fresnel and verified by Fizeau's celebrated experiments with flowing water. This momentous discovery is among the experimental cornerstones of Einstein's special relativity and is well understood in the context of relativistic kinematics. In contrast, experiments on dragging photons by an electron flow in solids are riddled with inconsistenc…
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Dragging of light by moving dielectrics was predicted by Fresnel and verified by Fizeau's celebrated experiments with flowing water. This momentous discovery is among the experimental cornerstones of Einstein's special relativity and is well understood in the context of relativistic kinematics. In contrast, experiments on dragging photons by an electron flow in solids are riddled with inconsistencies and so far eluded agreement with the theory. Here we report on the electron flow dragging surface plasmon polaritons (SPPs): hybrid quasiparticles of infrared photons and electrons in graphene. The drag is visualized directly through infrared nano-imaging of propagating plasmonic waves in the presence of a high-density current. The polaritons in graphene shorten their wavelength when launched against the drifting carriers. Unlike the Fizeau effect for light, the SPP drag by electrical currents defies the simple kinematics interpretation and is linked to the nonlinear electrodynamics of the Dirac electrons in graphene. The observed plasmonic Fizeau drag enables breaking of time-reversal symmetry and reciprocity at infrared frequencies without resorting to magnetic fields or chiral optical pumping.
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Submitted 19 March, 2021;
originally announced March 2021.
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Planar nano-optics in anisotropic media: anomalous refraction and diffraction-free lensing of highly confined polaritons
Authors:
J. Duan,
G. Álvarez-Pérez,
A. I. F. Tresguerres-Mata,
J. Taboada-Gutiérrez,
K. V. Voronin,
A. Bylinkin,
B. Chang,
S. Xiao,
S. Liu,
J. H. Edgar,
J. I. Martín,
V. S. Volkov,
R. Hillenbrand,
J. Martín-Sánchez,
A. Y. Nikitin,
P. Alonso-González
Abstract:
As one of the most fundamental optical phenomena, refraction between isotropic media is characterized by light bending towards the normal to the boundary when passing from a low- to a high-refractive-index medium. However, in anisotropic media, refraction is a much more exotic phenomenon. The most general case of refraction between two anisotropic media remains unexplored, particularly in natural…
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As one of the most fundamental optical phenomena, refraction between isotropic media is characterized by light bending towards the normal to the boundary when passing from a low- to a high-refractive-index medium. However, in anisotropic media, refraction is a much more exotic phenomenon. The most general case of refraction between two anisotropic media remains unexplored, particularly in natural media and at the nanoscale. Here, we visualize and comprehensively study refraction of electromagnetic waves between two strongly anisotropic (hyperbolic) media, and, importantly, we do it with the use of polaritons confined to the nanoscale in a low-loss natural medium, alpha-MoO3. Our images show refraction of polaritons under the general case in which both the direction of propagation and the wavevector are not collinear. As they traverse planar nanoprisms tailored in alpha-MoO3, refracted polaritons exhibit non-intuitive directions of propagation, enabling us to unveil an exotic optical effect: bending-free refraction. Furthermore, we succeed in developing the first in-plane refractive hyperlens, which yields foci as small as lamdap/6, being lamdap the polariton wavelength (lamda0/50 with respect to the wavelength of light in free space). Our results set the grounds for planar nano-optics in strongly anisotropic media, with potential for unprecedented control of the flow of energy at the nanoscale.
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Submitted 19 March, 2021;
originally announced March 2021.
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Unraveling Ultrafast Photoionization in Hexagonal Boron Nitride
Authors:
Lianjie Xue,
Song Liu,
Yang Hang,
Adam M. Summers,
Derrek J. Wilson,
Xinya Wang,
Pingping Chen,
Thomas G. Folland,
Jordan A. Hachtel,
Hongyu Shi,
Sajed Hosseini-Zavareh,
Suprem R. Das,
Shuting Lei,
Zhuhua Zhang,
Christopher M. Sorensen,
Wanlin Guo,
Joshua D. Caldwell,
James H. Edgar,
Cosmin I. Blaga,
Carlos A. Trallero-Herrero
Abstract:
The non-linear response of dielectrics to intense, ultrashort electric fields has been a sustained topic of interest for decades with one of its most important applications being femtosecond laser micro/nano-machining. More recently, renewed interests in strong field physics of solids were raised with the advent of mid-infrared femtosecond laser pulses, such as high-order harmonic generation, opti…
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The non-linear response of dielectrics to intense, ultrashort electric fields has been a sustained topic of interest for decades with one of its most important applications being femtosecond laser micro/nano-machining. More recently, renewed interests in strong field physics of solids were raised with the advent of mid-infrared femtosecond laser pulses, such as high-order harmonic generation, optical-field-induced currents, etc. All these processes are underpinned by photoionization (PI), namely the electron transfer from the valence to the conduction bands, on a time scale too short for phononic motion to be of relevance. Here, in hexagonal boron nitride, we reveal that the bandgap can be finely manipulated by femtosecond laser pulses as a function of field polarization direction with respect to the lattice, in addition to the field's intensity. It is the modification of bandgap that enables the ultrafast PI processes to take place in dielectrics. We further demonstrate the validity of the Keldysh theory in describing PI in dielectrics in the few TW/cm2 regime.
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Submitted 26 January, 2021; v1 submitted 25 January, 2021;
originally announced January 2021.
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Field-free deterministic switching of a perpendicularly polarized magnet using unconventional spin-orbit torques in WTe2
Authors:
I-Hsuan Kao,
Ryan Muzzio,
Hantao Zhang,
Menglin Zhu,
Jacob Gobbo,
Daniel Weber,
Rahul Rao,
Jiahan Li,
James H. Edgar,
Joshua E. Goldberger,
Jiaqiang Yan,
David G. Mandrus,
Jinwoo Hwang,
Ran Cheng,
Jyoti Katoch,
Simranjeet Singh
Abstract:
Spin-orbit torque (SOT) driven deterministic control of the magnetization state of a magnet with perpendicular magnetic anisotropy (PMA) is key to next generation spintronic applications including non-volatile, ultrafast, and energy efficient data storage devices. But, field-free deterministic switching of perpendicular magnetization remains a challenge because it requires an out-of-plane anti-dam…
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Spin-orbit torque (SOT) driven deterministic control of the magnetization state of a magnet with perpendicular magnetic anisotropy (PMA) is key to next generation spintronic applications including non-volatile, ultrafast, and energy efficient data storage devices. But, field-free deterministic switching of perpendicular magnetization remains a challenge because it requires an out-of-plane anti-damping torque, which is not allowed in conventional spin source materials such as heavy metals (HM) and topological insulators due to the system's symmetry. The exploitation of low-crystal symmetries in emergent quantum materials offers a unique approach to achieve SOTs with unconventional forms. Here, we report the first experimental realization of field-free deterministic magnetic switching of a perpendicularly polarized van der Waals (vdW) magnet employing an out-of-plane anti-damping SOT generated in layered WTe2 which is a low-crystal symmetry quantum material. The numerical simulations confirm that out-of-plane antidamping torque in WTe2 is responsible for the observed magnetization switching in the perpendicular direction.
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Submitted 22 December, 2020;
originally announced December 2020.
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Outstanding Thermal Conductivity of Single Atomic Layer Isotope-Modified Boron Nitride
Authors:
Qiran Cai,
Declan Scullion,
Wei Gan,
Alexey Falin,
Pavel Cizek,
Song Liu,
James H. Edgar,
Rong Liu,
Bruce C. C. Cowie,
Elton J. G. Santos,
Lu Hua Li
Abstract:
Materials with high thermal conductivities (k) is valuable to solve the challenge of waste heat dissipation in highly integrated and miniaturized modern devices. Herein, we report the first synthesis of atomically thin isotopically pure hexagonal boron nitride (BN) and its one of the highest k among all semiconductors and electric insulators. Single atomic layer (1L) BN enriched with 11B has a k u…
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Materials with high thermal conductivities (k) is valuable to solve the challenge of waste heat dissipation in highly integrated and miniaturized modern devices. Herein, we report the first synthesis of atomically thin isotopically pure hexagonal boron nitride (BN) and its one of the highest k among all semiconductors and electric insulators. Single atomic layer (1L) BN enriched with 11B has a k up to 1009 W/mK at room temperature. We find that the isotope engineering mainly suppresses the out-of-plane optical (ZO) phonon scatterings in BN, which subsequently reduces acoustic-optical scatterings between ZO and transverse acoustic (TA) and longitudinal acoustic (LA) phonons. On the other hand, reducing the thickness to single atomic layer diminishes the interlayer interactions and hence Umklapp scatterings of the out-of-plane acoustic (ZA) phonons, though this thickness-induced k enhancement is not as dramatic as that in naturally occurring BN. With many of its unique properties, atomically thin monoisotopic BN is promising on heat management in van der Waals (vdW) devices and future flexible electronics. The isotope engineering of atomically thin BN may also open up other appealing applications and opportunities in 2D materials yet to be explored.
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Submitted 21 August, 2020; v1 submitted 2 August, 2020;
originally announced August 2020.
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Probing Mid-Infrared Phonon Polaritons in the Aqueous Phase
Authors:
Haomin Wang,
Eli Janzen,
Le Wang,
James H. Edgar,
Xiaoji G. Xu
Abstract:
Phonon polaritons (PhPs), the collective phonon oscillations with hybridized electromagnetic fields, concentrate optical fields in the mid-infrared frequency range that matches the vibrational modes of molecules. The utilization of PhPs holds the promise for chemical sensing tools and polariton-enhanced nanospectroscopy. However, investigations and innovations on PhPs in the aqueous phase remains…
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Phonon polaritons (PhPs), the collective phonon oscillations with hybridized electromagnetic fields, concentrate optical fields in the mid-infrared frequency range that matches the vibrational modes of molecules. The utilization of PhPs holds the promise for chemical sensing tools and polariton-enhanced nanospectroscopy. However, investigations and innovations on PhPs in the aqueous phase remains stagnant, because of the lack of in situ mid-infrared nano-imaging methods in water. Strong infrared absorption from water prohibits optical delivery and detection in the mid-infrared for scattering-type near-field microscopy. Here, we present our solution: the detection of photothermal responses caused by the excitation of PhPs by liquid phase peak force infrared (LiPFIR) microscopy. Characteristic interference fringes of PhPs in 10B isotope-enriched h-BN were measured in the aqueous phase and their dispersion relationship extracted. LiPFIR enables the measurement of mid-infrared PhPs in the fluid phase, opening possibilities, and facilitating the development of mid-IR phonon polaritonics in water.
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Submitted 18 March, 2020;
originally announced March 2020.
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Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure
Authors:
J. Sonntag,
J. Li,
A. Plaud,
A. Loiseau,
J. Barjon,
J. H. Edgar,
C. Stampfer
Abstract:
Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and related 2D materials, but at the same time very hard to replace. Here we report on a method of growth at atmospheric pressure as a true alternative for producing…
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Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and related 2D materials, but at the same time very hard to replace. Here we report on a method of growth at atmospheric pressure as a true alternative for producing BN for high quality graphene/BN heterostructures. The process is not only more scalable, but also allows to grow isotopically purified BN crystals. We employ Raman spectroscopy, cathodoluminescence, and electronic transport measurements to show the high-quality of such monoisotopic BN and its potential for graphene-based heterostructures. The excellent electronic performance of our heterostructures is demonstrated by well developed fractional quantum Hall states, ballistic transport over distances around $10\,\mathrm{μm}$ at low temperatures and electron-phonon scattering limited transport at room temperature.
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Submitted 22 December, 2019;
originally announced December 2019.
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Three-dimensional Near-field Analysis Through Peak Force Scattering-type Near-field Optical Microscopy
Authors:
Haomin Wang,
Jiahan Li,
James H. Edgar,
Xiaoji G. Xu
Abstract:
Scattering-type scanning near-field optical microscopy (s-SNOM) is instrumental in exploring polaritonic behaviors of two-dimensional (2D) materials at the nanoscale. A sharp s-SNOM tip couples momenta into 2D materials through phase matching to excite phonon polaritons, which manifest as nanoscale interference fringes in raster images. However, s-SNOM lacks the ability to detect the progression o…
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Scattering-type scanning near-field optical microscopy (s-SNOM) is instrumental in exploring polaritonic behaviors of two-dimensional (2D) materials at the nanoscale. A sharp s-SNOM tip couples momenta into 2D materials through phase matching to excite phonon polaritons, which manifest as nanoscale interference fringes in raster images. However, s-SNOM lacks the ability to detect the progression of near-field property along the perpendicular axis to the surface. Here, we perform near-field analysis of a micro-disk and a reflective edge made of isotopically pure hexagonal boron nitride (h-11BN), by using three-dimensional near-field response cubes obtained by peak force scattering-type near-field optical microscopy (PF-SNOM). Momentum quantization of polaritons from the confinement of the circular structure is revealed in situ. Moreover, tip-sample distance is found to be capable of fine-tuning the momentum of polaritons and modifying the superposition of quantized polaritonic modes. The PF-SNOM-based three-dimensional near-field analysis provides detailed characterization capability with a high spatial resolution to fully map three-dimensional near-fields of nano-photonics and polaritonic structures.
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Submitted 26 December, 2019; v1 submitted 14 August, 2019;
originally announced August 2019.
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Refractive Index-Based Control of Hyperbolic Phonon-Polariton Propagation
Authors:
Alireza Fali,
Samuel T. White,
Thomas G. Folland,
Mingze. He,
Neda A. Aghamiri,
Song Liu,
James H. Edgar,
Joshua D. Caldwell,
Richard F. Haglund,
Yohannes Abate
Abstract:
Hyperbolic phonon polaritons (HPhPs) are generated when infrared photons couple to polar optic phonons in anisotropic media, confining long-wavelength light to nanoscale volumes. However, to realize the full potential of HPhPs for infrared optics, it is crucial to understand propagation and loss mechanisms on substrates suitable for applications from waveguiding to infrared sensing. In this paper,…
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Hyperbolic phonon polaritons (HPhPs) are generated when infrared photons couple to polar optic phonons in anisotropic media, confining long-wavelength light to nanoscale volumes. However, to realize the full potential of HPhPs for infrared optics, it is crucial to understand propagation and loss mechanisms on substrates suitable for applications from waveguiding to infrared sensing. In this paper, we employ scattering-type scanning near-field optical microscopy (s-SNOM) and nano-Fourier transform infrared (FTIR) spectroscopy, in concert with analytical and numerical calculations, to elucidate HPhP characteristics as a function of the complex substrate dielectric function. We consider propagation on suspended, dielectric and metallic substrates to demonstrate that the thickness-normalized wavevector can be reduced by a factor of 25 simply by changing the substrate from dielectric to metallic behavior. Moreover, by incorporating the imaginary contribution to the dielectric function in lossy materials, the wavevector can be dynamically controlled by small local variations in loss or carrier density. Such effects may therefore be used to spatially separate hyperbolic modes of different orders, and indicates that for index-based sensing schemes that HPhPs can be more sensitive than surface polaritons in the thin film limit. Our results advance our understanding of fundamental polariton excitations and their potential for on-chip photonics and planar metasurface optics.
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Submitted 3 July, 2019;
originally announced July 2019.
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Giant oscillations in a triangular network of one-dimensional states in marginally twisted graphene
Authors:
S. G. Xu,
A. I. Berdyugin,
P. Kumaravadivel,
F. Guinea,
R. Krishna Kumar,
D. A. Bandurin,
S. V. Morozov,
W. Kuang,
B. Tsim,
S. Liu,
J. H. Edgar,
I. V. Grigorieva,
V. I. Fal'ko,
M. Kim,
A. K. Geim
Abstract:
The electronic properties of graphene superlattices have attracted intense interest that was further stimulated by the recent observation of novel many-body states at "magic" angles in twisted bilayer graphene (BLG). For very small ("marginal") twist angles of 0.1 deg, BLG has been shown to exhibit a strain-accompanied reconstruction that results in submicron-size triangular domains with the Berna…
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The electronic properties of graphene superlattices have attracted intense interest that was further stimulated by the recent observation of novel many-body states at "magic" angles in twisted bilayer graphene (BLG). For very small ("marginal") twist angles of 0.1 deg, BLG has been shown to exhibit a strain-accompanied reconstruction that results in submicron-size triangular domains with the Bernal stacking. If the interlayer bias is applied to open an energy gap inside the domain regions making them insulating, marginally-twisted BLG is predicted to remain conductive due to a triangular network of chiral one-dimensional (1D) states hosted by domain boundaries. Here we study electron transport through this network and report giant Aharonov-Bohm oscillations persisting to temperatures above 100 K. At liquid helium temperatures, the network resistivity exhibits another kind of oscillations that appear as a function of carrier density and are accompanied by a sign-changing Hall effect. The latter are attributed to consecutive population of the flat minibands formed by the 2D network of 1D states inside the gap. Our work shows that marginally twisted BLG is markedly distinct from other 2D electronic systems, including BLG at larger twist angles, and offers a fascinating venue for further research.
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Submitted 19 August, 2019; v1 submitted 30 May, 2019;
originally announced May 2019.
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Polariton Nanophotonics using Phase Change Materials
Authors:
Kundan Chaudhary,
Michele Tamagnone,
Xinghui Yin,
Christina M. Spägele,
Stefano L. Oscurato,
Jiahan Li,
Christoph Persch,
Ruoping Li,
Noah A. Rubin,
Luis A. Jauregui,
Kenji Watanabe,
Takashi Taniguchi,
Philip Kim,
Matthias Wuttig,
James H. Edgar,
Antonio Ambrosio,
Federico Capasso
Abstract:
Polaritons formed by the coupling of light and material excitations such as plasmons, phonons, or excitons enable light-matter interactions at the nanoscale beyond what is currently possible with conventional optics. Recently, significant interest has been attracted by polaritons in van der Waals materials, which could lead to applications in sensing, integrated photonic circuits and detectors. Ho…
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Polaritons formed by the coupling of light and material excitations such as plasmons, phonons, or excitons enable light-matter interactions at the nanoscale beyond what is currently possible with conventional optics. Recently, significant interest has been attracted by polaritons in van der Waals materials, which could lead to applications in sensing, integrated photonic circuits and detectors. However, novel techniques are required to control the propagation of polaritons at the nanoscale and to implement the first practical devices. Here we report the experimental realization of polariton refractive and meta-optics in the mid-infrared by exploiting the properties of low-loss phonon polaritons in isotopically pure hexagonal boron nitride (hBN), which allow it to interact with the surrounding dielectric environment comprising the low-loss phase change material, Ge$_3$Sb$_2$Te$_6$ (GST). We demonstrate waveguides which confine polaritons in a 1D geometry, and refractive optical elements such as lenses and prisms for phonon polaritons in hBN, which we characterize using scanning near field optical microscopy. Furthermore, we demonstrate metalenses, which allow for polariton wavefront engineering and sub-wavelength focusing. Our method, due to its sub-diffraction and planar nature, will enable the realization of programmable miniaturized integrated optoelectronic devices, and will lay the foundation for on-demand biosensors.
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Submitted 9 May, 2019; v1 submitted 3 May, 2019;
originally announced May 2019.
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Strong magnetophonon oscillations in extra-large graphene
Authors:
P. Kumaravadivel,
M. T. Greenaway,
D. Perello,
A. Berdyugin,
J. Birkbeck,
J. Wengraf,
S. Liu,
J. H. Edgar,
A. K. Geim,
L. Eaves,
R. Krishna Kumar
Abstract:
Van der Waals materials and their heterostructures offer a versatile platform for studying a variety of quantum transport phenomena due to their unique crystalline properties and the exceptional ability in tuning their electronic spectrum. However, most experiments are limited to devices that have lateral dimensions of only a few micrometres. Here, we perform magnetotransport measurements on graph…
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Van der Waals materials and their heterostructures offer a versatile platform for studying a variety of quantum transport phenomena due to their unique crystalline properties and the exceptional ability in tuning their electronic spectrum. However, most experiments are limited to devices that have lateral dimensions of only a few micrometres. Here, we perform magnetotransport measurements on graphene/hexagonal boron-nitride Hall bars and show that wider devices reveal additional quantum effects. In devices wider than ten micrometres we observe distinct magnetoresistance oscillations that are caused by resonant scattering of Landau-quantised Dirac electrons by acoustic phonons in graphene. The study allows us to accurately determine graphene's low energy phonon dispersion curves and shows that transverse acoustic modes cause most of phonon scattering. Our work highlights the crucial importance of device width when probing quantum effects and also demonstrates a precise, spectroscopic method for studying electron-phonon interactions in van der Waals heterostructures.
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Submitted 1 August, 2019; v1 submitted 1 May, 2019;
originally announced May 2019.