Showing 1–28 of 28 results for author: Deb, S

Investigating the Ferroelectric Potential Landscape of 3R-MoS$_2$ through Optical Measurements

Authors: Jan-Niklas Heidkamp, Johannes Schwandt-Krause, Swarup Deb, Kenji Watanabe, Takashi Taniguchi, Rico Schwartz, Tobias Korn

Abstract: In recent years, sliding ferroelectricity has emerged as a topic of significant interest due to its possible application in non-volatile random access memory. This phenomenon is unique to two-dimensional van der Waals materials, where vertical ferroelectric polarization switching is induced by relative in-plane sliding of the constituent layers. The intrinsic stacking order influences the resultin… ▽ More In recent years, sliding ferroelectricity has emerged as a topic of significant interest due to its possible application in non-volatile random access memory. This phenomenon is unique to two-dimensional van der Waals materials, where vertical ferroelectric polarization switching is induced by relative in-plane sliding of the constituent layers. The intrinsic stacking order influences the resulting polarization, creating distinct polarization regions separated by domain walls. These regions and the domain walls can be manipulated using an applied vertical electric field, enabling a switchable system that retains the environmental robustness of van der Waals materials under ambient conditions. This study investigates 3R-MoS$_2$ using various optical measurement techniques at room temperature. The spatially resolved optical measurements reveal apparent signal changes corresponding to different ferroelectric stacking orders and variations in layer count. Our findings demonstrate that fast optical mapping at room temperature is a reliable method for probing ferroelectric potential steps in 3R-stacked MoS$_2$ samples, thereby facilitating the identification of the ferroelectric configuration. This approach does not require a conductive substrate or an electrical contact to the sample, making it more versatile than traditional atomic force probe techniques. △ Less

Submitted 19 September, 2025; v1 submitted 18 September, 2025; originally announced September 2025.

Ferroelectric Control of Interlayer Excitons in 3R-MoS$_{2}$ / MoSe$_{2}$ Heterostructures

Authors: Johannes Schwandt-Krause, Mohammed El Amine Miloudi, Elena Blundo, Swarup Deb, Jan-Niklas Heidkamp, Kenji Watanabe, Takashi Taniguchi, Rico Schwartz, Andreas Stier, Jonathan J. Finley, Oliver Kühn, Tobias Korn

Abstract: We investigate the interaction between interlayer excitons and ferroelectric domains in hBN-encapsulated 3R-MoS$_2$/MoSe$_2$ heterostructures, combining photoluminescence experiments with density functional theory and many-body Green's function calculations. Low-temperature photoluminescence spectroscopy reveals a strong redshift of the interlayer exciton energy with increasing MoS$_2$ layer thick… ▽ More We investigate the interaction between interlayer excitons and ferroelectric domains in hBN-encapsulated 3R-MoS$_2$/MoSe$_2$ heterostructures, combining photoluminescence experiments with density functional theory and many-body Green's function calculations. Low-temperature photoluminescence spectroscopy reveals a strong redshift of the interlayer exciton energy with increasing MoS$_2$ layer thickness, attributed to band renormalization and dielectric effects. We observe local variations in exciton energy that correlate with local ferroelectric domain polarization of the 3R-MoS$_2$ layer, showcasing distinct domain-dependent interlayer exciton transition energies. Gate voltage experiments demonstrate that the interlayer exciton energy can be tuned by electrically induced domain switching. These results highlight the potential for interlayer exciton control by local ferroelectric order and establish a foundation for future ferroelectric optoelectronic devices based on van der Waals heterostructures. △ Less

Submitted 30 September, 2025; v1 submitted 12 August, 2025; originally announced August 2025.

Enhanced and Efficient Extraction of Uranyl Ions from Aqueous Waste through Graphene/CNT-PAMAM Nanocomposites

Authors: Tarun Maity, Yogendra Kumar, Ashish Kumar Singha Deb, Sk Musharaf Ali, Prabal K Maiti

Abstract: The increasing threat of uranium contamination to environmental and human health due to its radiotoxicity demands the development of novel and efficient adsorbents for remediation. In this study, we investigated the potential of poly(amidoamine) (PAMAM) dendrimers of generations 1 to 4 (G1 - G4) functionalized with graphene and carbon nanotubes (CNTs) as adsorbents for uranyl ion removal from aque… ▽ More The increasing threat of uranium contamination to environmental and human health due to its radiotoxicity demands the development of novel and efficient adsorbents for remediation. In this study, we investigated the potential of poly(amidoamine) (PAMAM) dendrimers of generations 1 to 4 (G1 - G4) functionalized with graphene and carbon nanotubes (CNTs) as adsorbents for uranyl ion removal from aqueous solutions. By combining atomistic molecular dynamics (MD) simulations with experimental validation, we examined the influence of pH, uranyl ion concentration, and dendrimer generation on adsorption behavior. Our study revealed that uranyl ion adsorption is greater when PAMAM is grafted onto graphene/CNT than pristine PAMAM. However, PAMAM-grafted CNTs exhibit superior adsorption capacity at specific uranyl concentrations due to their curvature and abundant accessible binding sites. Higher-generation PAMAM dendrimers grafted onto graphene/CNTs exhibit greater adsorption capacity due to the increased availability of binding sites, which is consistent with experimental observations. The adsorption capability of uranyl ions in all four generations of the PAMAM dendrimer increased as the concentration of uranyl ions increased. Adsorption capacity increases with increasing uranyl ion concentration, and adsorption occurs on both PAMAM and graphene/CNT surfaces, with saturation observed at higher concentrations. This study provides insights into the adsorption mechanisms and highlights the potential of PAMAM-based nanocomposites for efficient uranyl ion extraction and environmental remediation. △ Less

Submitted 23 January, 2025; originally announced January 2025.

Polarized Raman Analysis at Low Temperature to Examine Interface Phonons in InAs/GaAs_(1-x)Sb_x Quantum Dot Heterostructures

Authors: Priyesh Kumar, Sudip Kumar Deb, Subhananda Chakrabarti, Jhuma Saha

Abstract: An experimental study of optical phonon modes, both normal and interface (IF) phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot heterostructures has been presented by means of low-temperature polarized Raman scattering. The effect of Sb-content on the frequency positions of these phonon modes has been very well correlated with the simulated strain. The Raman peaks show different f… ▽ More An experimental study of optical phonon modes, both normal and interface (IF) phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot heterostructures has been presented by means of low-temperature polarized Raman scattering. The effect of Sb-content on the frequency positions of these phonon modes has been very well correlated with the simulated strain. The Raman peaks show different frequency shifts in the heterostructure with varying Sb-content in the capping layer. This shift is attributed to the strain relaxation, bigger size of quantum dots and type-II band alignment. △ Less

Submitted 15 September, 2024; originally announced September 2024.

Excitonic signatures of ferroelectric order in parallel-stacked MoS$_2$

Authors: Swarup Deb, Johannes Krause, Paulo E. Faria Junior, Michael Andreas Kempf, Rico Schwartz, Kenji Watanabe, Takashi Taniguchi, Jaroslav Fabian, Tobias Korn

Abstract: Interfacial ferroelectricity, prevalent in various parallel-stacked layered materials, allows switching of out-of-plane ferroelectric order by in-plane sliding of adjacent layers. Its resilience against doping potentially enables next-generation storage and logic devices. However, studies have been limited to indirect sensing or visualization of ferroelectricity. For transition metal dichalcogenid… ▽ More Interfacial ferroelectricity, prevalent in various parallel-stacked layered materials, allows switching of out-of-plane ferroelectric order by in-plane sliding of adjacent layers. Its resilience against doping potentially enables next-generation storage and logic devices. However, studies have been limited to indirect sensing or visualization of ferroelectricity. For transition metal dichalcogenides, there is little knowledge about the influence of ferroelectric order on their intrinsic valley and excitonic properties. Here, we report direct probing of ferroelectricity in few-layer 3R-MoS$_2$ using reflectance contrast spectroscopy. Contrary to a simple electrostatic perception, layer-hybridized excitons with out-of-plane electric dipole moment remain decoupled from ferroelectric ordering, while intralayer excitons with in-plane dipole orientation are sensitive to it. Ab initio calculations identify stacking-specific interlayer hybridization leading to this asymmetric response. Exploiting this sensitivity, we demonstrate optical readout and control of multi-state polarization with hysteretic switching in a field-effect device. Time-resolved Kerr ellipticity reveals a direct correspondence between spin-valley dynamics and stacking order. △ Less

Submitted 11 September, 2024; originally announced September 2024.

Journal ref: Nature Communications 15 (2024) 7595

Polarization Saturation in Multi-layered Interfacial Ferroelectrics

Authors: Wei Cao, Swarup Deb, Maayan Vizner Stern, Noam Raab, Michael Urbakh, Oded Hod, Leeor Kronik, Moshe Ben Shalom

Abstract: Van der Waals (vdW) polytypes of broken inversion and mirror symmetries were recently shown to exhibit switchable electric polarization even at the ultimate two-layer thin limit. Their out-of-plane polarization was found to accumulate in a ladder-like fashion with each successive layer, offering 2D building blocks for the bottom-up construction of 3D ferroelectrics. Here, we demonstrate experiment… ▽ More Van der Waals (vdW) polytypes of broken inversion and mirror symmetries were recently shown to exhibit switchable electric polarization even at the ultimate two-layer thin limit. Their out-of-plane polarization was found to accumulate in a ladder-like fashion with each successive layer, offering 2D building blocks for the bottom-up construction of 3D ferroelectrics. Here, we demonstrate experimentally that beyond a critical stack thickness, the accumulated polarization in rhombohedral polytypes of molybdenum disulfide (r-MoS2) saturates. The underlying saturation mechanism, deciphered via DFT and self-consistent Poisson-Schrödinger calculations, point to a purely electronic redistribution involving: (1) polarization-induced bandgap closure that allows for cross-stack charge transfer and the emergence of free surface charge; (2) reduction of the polarization saturation value, as well as the critical thickness at which it is obtained, by the presence of free carriers. The resilience of polar layered structures to atomic surface reconstruction, which is essentially unavoidable in polar 3D crystals, potentially allows for the design of new devices with mobile surface charges. Our findings, which are of general nature, should be accounted for when designing switching and/or conductive devices based on ferroelectric layered materials. △ Less

Submitted 29 July, 2024; originally announced July 2024.

Effect of spin-dependent tunneling in a MoSe$_2$/Cr$_2$Ge$_2$Te$_6$ van der Waals heterostructure on exciton and trion emission

Authors: Annika Bergmann, Swarup Deb, Klaus Zollner, Veronika Schneidt, Mustafa Hemaid, Kenji Watanabe, Takashi Taniguchi, Rico Schwartz, Jaroslav Fabian, Tobias Korn

Abstract: We study van der Waals heterostructures consisting of monolayer MoSe$_2$ and few-layer Cr$_2$Ge$_2$Te$_6$ fully encapsulated in hexagonal Boron Nitride using low-temperature photoluminescence and polar magneto-optic Kerr effect measurements. Photoluminescence characterization reveals a partial quenching and a change of the exciton-trion emission ratio in the heterostructure as compared to the isol… ▽ More We study van der Waals heterostructures consisting of monolayer MoSe$_2$ and few-layer Cr$_2$Ge$_2$Te$_6$ fully encapsulated in hexagonal Boron Nitride using low-temperature photoluminescence and polar magneto-optic Kerr effect measurements. Photoluminescence characterization reveals a partial quenching and a change of the exciton-trion emission ratio in the heterostructure as compared to the isolated MoSe$_2$ monolayer. Under circularly polarized excitation, we find that the exciton-trion emission ratio depends on the relative orientation of excitation helicity and Cr$_2$Ge$_2$Te$_6$ magnetization, even though the photoluminescence emission itself is unpolarized. This observation hints at an ultrafast, spin-dependent interlayer charge transfer that competes with exciton and trion formation and recombination. △ Less

Submitted 28 January, 2025; v1 submitted 16 July, 2024; originally announced July 2024.

Rapid spin depolarization in the layered 2D Ruddlesden Popper perovskite (BA)(MA)PbI

Authors: Michael Kempf, Philipp Moser, Maximilian Tomoscheit, Julian Schröer, Jean-Christophe Blancon, Rico Schwartz, Swarup Deb, Aditya Mohite, Andreas V. Stier, Jonathan J. Finley, Tobias Korn

Abstract: We report temperature-dependent spectroscopy on the layered (n=4) two-dimensional (2D) Ruddlesden-Popper perovskite (BA)(MA)PbI. Helicity-resolved steady-state photoluminescence (PL) reveals no optical degree of polarization. Time-resolved PL shows a photocarrier lifetime on the order of nanoseconds. From simultaneaously recorded time-resolved differential reflectivity (TR$Δ$R) and time-resolved K… ▽ More We report temperature-dependent spectroscopy on the layered (n=4) two-dimensional (2D) Ruddlesden-Popper perovskite (BA)(MA)PbI. Helicity-resolved steady-state photoluminescence (PL) reveals no optical degree of polarization. Time-resolved PL shows a photocarrier lifetime on the order of nanoseconds. From simultaneaously recorded time-resolved differential reflectivity (TR$Δ$R) and time-resolved Kerr ellipticity (TRKE), a photocarrier lifetime of a few nanoseconds and a spin dephasing time on the order of picoseconds was found. This stark contrast in lifetimes clearly explains the lack of spin polarization in steady-state PL. While we observe clear temperature-dependent effects on the PL dynamics that can be related to structural dynamics, the spin dephasing is nearly T-independent. Our results highlight that spin dephasing in 2D (BA)(MA)PbI occurs at time scales faster than the exciton recombination time, which poses a bottleneck for applications aimingto utilize this degree of freedom. △ Less

Submitted 18 September, 2023; originally announced September 2023.

Journal ref: ACS nano 2023

Cumulative Polarization Coexisting with Conductivity at Interfacial Ferroelectrics

Authors: Swarup Deb, Wei Cao, Noam Raab, Kenji Watanabe, Takashi Taniguchi, Moshe Goldstein, Leeor Kronik, Michael Urbakh, Oded Hod, Moshe Ben Shalom

Abstract: Ferroelectricity in atomically thin bilayer structures has been recently predicted1 and measured[2-4] in two-dimensional (2D) materials with hexagonal non-centrosymmetric unit-cells. Interestingly, the crystal symmetry translates lateral shifts between parallel 2D layers to a change of sign in their out-of-plane electric polarization, a mechanism referred to as "Slide-Tronics"[4]. These observatio… ▽ More Ferroelectricity in atomically thin bilayer structures has been recently predicted1 and measured[2-4] in two-dimensional (2D) materials with hexagonal non-centrosymmetric unit-cells. Interestingly, the crystal symmetry translates lateral shifts between parallel 2D layers to a change of sign in their out-of-plane electric polarization, a mechanism referred to as "Slide-Tronics"[4]. These observations, however, have been restricted to switching between only two polarization states under low charge carrier densities[5-12], strongly limiting the practical application of the revealed phenomena[13]. To overcome these issues, one needs to explore the nature of the polarization that arises in multi-layered van der Waals (vdW) stacks, how it is governed by intra- and inter-layer charge redistribution, and to which extent it survives the introduction of mobile charge carriers, all of which are presently unknown14. To explore these questions, we conduct surface potential measurements of parallel WSe2 and MoS2 multi-layers with aligned and anti-aligned configurations of the polar interfaces. We find evenly spaced, nearly decoupled potential steps, indicating highly confined interfacial electric fields, which provide means to design multi-state "ladder ferroelectrics". Furthermore, we find that the internal polarization remains significant upon electrostatic doping of a mobile charge carrier density as high as 1013 cm-2, with substantial in-plane conductivity. Using first-principles calculations based on density functional theory (DFT), we trace the extra charge redistribution in real and momentum space and identify an eventual doping-induced depolarization mechanism. △ Less

Submitted 24 June, 2022; originally announced June 2022.

Effect of manganese incorporation on the excitonic recombination dynamics in monolayer MoS$_2$

Authors: Poulab Chakrabarti, Santosh Kumar Yadav, Swarup Deb, Subhabrata Dhar

Abstract: Using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Raman spectroscopy techniques we investigate the incorporation of Manganese (Mn) in monolayer (1L)-MoS$_2$ grown on sapphire substrates by microcavity based chemical vapor deposition (CVD) method. These layers are coated with different amount of Mn by pulsed laser deposition (PLD) technique and temperature dependent ph… ▽ More Using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Raman spectroscopy techniques we investigate the incorporation of Manganese (Mn) in monolayer (1L)-MoS$_2$ grown on sapphire substrates by microcavity based chemical vapor deposition (CVD) method. These layers are coated with different amount of Mn by pulsed laser deposition (PLD) technique and temperature dependent photo-luminescence (PL) spectroscopic study has helped us in understanding how such deposition affects the dynamics of excitonic recombination in this system. The study further reveals two distinctly different Mn-incorporation regimes. Below a certain critical deposition amount of Mn, thin Mn-coating with large area coverage is found on MoS$_2$ layers and in this regime, substitution of Mo ions by Mn is detected through XPS. Dewetting takes place when Mn-deposition crosses the critical mark, which results in the formation of Mn-droplets on MoS$_2$ layers. In this regime, substitutional incorporation of Mn is suppressed, while the Raman study suggests an enhancement of disorder in the lattice with the Mn-deposition time. From PL investigation, it has been found that the increase of the amount of Mn-deposition not only enhances the density of non-radiative recombination channels for the excitons but also raises the barrier height for such recombination to take place. The study attributes these non-radiative transitions to certain Mo related defects (either Mo-vacancies or distorted Mo-S bonds), which are believed to be generated in large numbers during Mn-droplet formation stage as a result of the withdrawal of Mn ions from the Mo-substitutional sites. △ Less

Submitted 16 January, 2022; originally announced January 2022.

Comments: Page 1-19 main text with 6 figures. Page 20-24 supplementary material with 4 figures

Journal ref: Journal of Applied Physics, 131, 205306 (2022)

Spin transport in polarization induced two dimensional confinement of carriers in wedge shaped \textit{c}-GaN nanowalls

Authors: Swarup Deb, Subhabrata Dhar

Abstract: Spin transport property of polarization induced two-dimensional electron gas channel formed in the central vertical plane of a wedge-shaped \textit{c}-oriented GaN nanowall is investigated theoretically. Since the confining potential preserves the spatial symmetry between the conduction and valence band, the Rashba effect is suppressed in this system even when the shape of the wedge is asymmetric.… ▽ More Spin transport property of polarization induced two-dimensional electron gas channel formed in the central vertical plane of a wedge-shaped \textit{c}-oriented GaN nanowall is investigated theoretically. Since the confining potential preserves the spatial symmetry between the conduction and valence band, the Rashba effect is suppressed in this system even when the shape of the wedge is asymmetric. It has been found that the relaxation of the electron spin oriented along the direction of the confinement via D'yakonov-Perel' (DP) mechanism, which is the dominant process of relaxation in this high mobility channel, is entirely switched off at low temperatures. Spin relaxation can be turned on by applying a suitable bias at the gate. Exploiting this remarkable effect, a novel all electrically driven spin-transistor has been proposed. △ Less

Submitted 17 July, 2020; originally announced July 2020.

Comments: 6 pages, 5 figures, one supplementary information

Tunability of electrical and thermoelectrical properties of monolayer MoS$_2$ through oxygen passivation

Authors: Swarup Deb, Pritam Bhattacharyya, Poulab Chakrabarti, Himadri Chakraborti, Kantimay Das Gupta, Alok Shukla, Subhabrata Dhar

Abstract: Electric and thermoelectric properties of strictly monolayer MoS$_2$ films, which are grown using a novel micro-cavity based CVD growth technique, have been studied under diverse environmental and annealing conditions. Resistance of a thermoelectric device that is fabricated on a continuous monolayer MoS$_2$ layer using photolithography technique has been found to reduce by about six orders of mag… ▽ More Electric and thermoelectric properties of strictly monolayer MoS$_2$ films, which are grown using a novel micro-cavity based CVD growth technique, have been studied under diverse environmental and annealing conditions. Resistance of a thermoelectric device that is fabricated on a continuous monolayer MoS$_2$ layer using photolithography technique has been found to reduce by about six orders of magnitudes upon annealing in vacuum at 525 K. Seebeck coefficient of the layer also reduces by almost an order of magnitude upon annealing. When the sample is exposed to oxygen atmosphere, these parameters return to their previous values. In fact, it has been found that the electron concentration, mobility as well as the thermoelectric power of the material can be tuned by controlling the temperature of annealing and oxygen exposure. Once established, these values are maintained as long as the layer is not exposed to oxygen environment. This can offer a unique way to control doping in the material provided an effective encapsulation method is devised. Such control is an important step forward for device application. The effect has been attributed to the passivation of di-sulfur vacancy donors present in the MoS$_2$ film by physisorbed oxygen molecules. Band structural calculations using density functional theory have been carried out, results of which indeed validate this picture. △ Less

Submitted 7 March, 2020; originally announced March 2020.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. Applied 14, 034030 (2020)

Atypical electrical behavior of few layered WS2 nanosheets based platform subject to heavy metal ion treatment

Authors: A Neog, S. Deb, R. Biswas

Abstract: An atypical electrical behavior of WS2 nanosheets deposited on Cu electrodes is reported here. The characteristic Raman peaks at 355cm-1 and 421.8cm-1 confirm the few-layer structure of WS2. The addition of heavy metal ions of ~30 micro Liter on this platform results in non-ohmic behavior in I-V characteristics, accompanied by a dramatic rise of current from nA to micro Ampere Additionally, this a… ▽ More An atypical electrical behavior of WS2 nanosheets deposited on Cu electrodes is reported here. The characteristic Raman peaks at 355cm-1 and 421.8cm-1 confirm the few-layer structure of WS2. The addition of heavy metal ions of ~30 micro Liter on this platform results in non-ohmic behavior in I-V characteristics, accompanied by a dramatic rise of current from nA to micro Ampere Additionally, this atypical behavior is found to be reversible. Subsequent to removal of these ions from the nanosheets, it again exhibits normal ohmic I-V characteristics. It is envisioned that this unusual characteristic will pave way for more research in the sensing direction as well as relevant fields. △ Less

Submitted 16 October, 2019; originally announced October 2019.

Comments: 10 pages, 5 figures

Journal ref: Materials Letter, 2020

Demonstration of defect-defect ferromagnetic coupling in Gd doped GaN epitaxial films: A polarization selective magneto-photoluminescence study

Authors: Rajendra K. Saroj, Preetha Sarkar, Swarup Deb, S. Dhar

Abstract: Magnetic field dependent polarization selective photoluminescence(PL) study has been carried out at 1.5~K on Gd-doped GaN epitaxial layers grown on c-SiC substrates by molecular beam epitaxy technique. It has been found that the incorporation of Gd in GaN leads to the generation of three types of donor like defects that result in neutral donor bound excitonic features in low temperature PL. The st… ▽ More Magnetic field dependent polarization selective photoluminescence(PL) study has been carried out at 1.5~K on Gd-doped GaN epitaxial layers grown on c-SiC substrates by molecular beam epitaxy technique. It has been found that the incorporation of Gd in GaN leads to the generation of three types of donor like defects that result in neutral donor bound excitonic features in low temperature PL. The study reveals that the rate of spin-flip scattering for all the three excitonic features becomes almost $B$-independent suggesting that these signals must be stemming from defects which are ferromagnetically coupled with each other. This is further confirmed by the study carried out on a GaN sample co-doped with Si and Gd, where defects are found to be ferromagnetically coupled, while Si-donors do not show any involvement in coupling. △ Less

Submitted 13 December, 2018; originally announced December 2018.

Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics

Authors: Soma Banik, Pranab Kumar Das, Azzedine Bendounan, Ivana Vobornik, A. Arya, Nathan Beaulieu, Jun Fujii, A. Thamizhavel, P. U. Sastry, A. K. Sinha, D. M. Phase, S. K. Deb

Abstract: Rashba spin-orbit splitting in the magnetic materials opens up a new perspective in the field of spintronics. Here, we report a giant Rashba-type spin-orbit effect on PrGe [010] surface in the paramagnetic phase with Rashba coefficient α_R=5 eVÅ. Significant changes in the electronic band structure has been observed across the phase transitions from paramagnetic to antiferromagnetic (44 K) and fro… ▽ More Rashba spin-orbit splitting in the magnetic materials opens up a new perspective in the field of spintronics. Here, we report a giant Rashba-type spin-orbit effect on PrGe [010] surface in the paramagnetic phase with Rashba coefficient α_R=5 eVÅ. Significant changes in the electronic band structure has been observed across the phase transitions from paramagnetic to antiferromagnetic (44 K) and from antiferromagnetic to the ferromagnetic ground state (41.5 K). We find that Pr 4f states in PrGe is strongly hybridized with the Pr 5d and Ge 4s-4p states near the Fermi level. The behavior of Rashba effect is found to be different in the k_x and the k_y directions showing electron-like and the hole-like bands, respectively. The possible origin of Rashba effect in the paramagnetic phase is related to the anti-parallel spin polarization present in this system. First-principles density functional calculations of Pr terminated surface with the anti-parallel spins shows a fair agreement with the experimental results. We find that the anti-parallel spins are strongly coupled to the lattice such that the PrGe system behaves like weak ferromagnetic system. Analysis of the energy dispersion curves at different magnetic phases showed that there is a competition between the Dzyaloshinsky-Moriya interaction and the exchange interaction which gives rise to the magnetic ordering in PrGe. Supporting evidences of the presence of Dzyaloshinsky-Moriya interaction are observed as anisotropic magnetoresistance with respect to field direction and first-order type hysteresis in the X-ray diffraction measurements. A giant negative magnetoresistance of 43% in the antiferromagnetic phase and tunable Rashba parameter with temperature across the magnetic transitions makes this material a suitable candidate for technological application in the antiferromagnetic spintronic devices. △ Less

Submitted 21 September, 2016; v1 submitted 20 September, 2016; originally announced September 2016.

Comments: 4 figures, supplementary information

Effect of gamma irradiation on the structure and valence state of Nd in phosphate glass

Authors: V. N. Rai, B. N. Raja Sekhar, D. M. Phase, S. K. Deb

Abstract: Fourier transform infrared (FTIR) spectra and X-ray photoelectron spectra (XPS) of Nd doped phosphate glasses have been studied before and after gamma irradiation in order to find the behavior of chemical bonds, which decide the structural changes in the glass samples. IR absorption spectra of these glasses are found dominated mainly by the characteristics phosphate groups, water (OH) present in t… ▽ More Fourier transform infrared (FTIR) spectra and X-ray photoelectron spectra (XPS) of Nd doped phosphate glasses have been studied before and after gamma irradiation in order to find the behavior of chemical bonds, which decide the structural changes in the glass samples. IR absorption spectra of these glasses are found dominated mainly by the characteristics phosphate groups, water (OH) present in the glass network as well as on the composition of glass matrix. The effects of gamma irradiation are observed in the form of bond breaking and possible re-arrangement of the bonding in the glass. Energy dispersive X-ray spectroscopy (EDX) and XPS measurements show changes in the relative concentration of elements; particularly decrease in the concentration of oxygen in the glass samples after gamma irradiation, a possible source of oxygen vacancies. The decrease in the asymmetry in O 1s spectra after gamma irradiation indicates towards decrease in the concentration of bridging oxygen as a result of P-O-P bond breaking. Asymmetric profile of Nd 3d5/2peak after gamma irradiation is found to be due to conversion of Nd3+ to Nd2+ in the glass matrix. △ Less

Submitted 18 June, 2014; originally announced June 2014.

Localized surface plasmon resonance (LSPR) and refractive index sensitivity of vacuum evaporated nanostructured gold thin films

Authors: V. N. Rai, A. K. Srivastava, C. Mukherjee, S. K. Deb

Abstract: The plasmonic properties of vacuum evaporated nanostructured gold thin films having different types of nanoparticles are presented. The films with more than 6 nm thickness show presence of nanorods having non cylindrical shape with triangular base. Two characteristics plasmon bands have been recoreded in absorption spectra. First one occurs below 500 nm and other one at higher wavelength side. Bot… ▽ More The plasmonic properties of vacuum evaporated nanostructured gold thin films having different types of nanoparticles are presented. The films with more than 6 nm thickness show presence of nanorods having non cylindrical shape with triangular base. Two characteristics plasmon bands have been recoreded in absorption spectra. First one occurs below 500 nm and other one at higher wavelength side. Both the peaks show dependence on the dielectric property of surroundings. The higher wavelength localized surface plasmon resonance (LSPR) peak shifts to higher wavelength with an increase in the nanoparticle size, surface roughness and refractive index of the surrounding (Methylene Blue dye coating). This shows that such thin films can be used as sensor for organic molecules with a refractive index sensitivity ranging from 250 - 305 nm/RIU (Refractive Index Unit). △ Less

Submitted 18 June, 2014; originally announced June 2014.

Estimate of the Coulomb Correlation Energy in CeAg$_2$Ge$_2$ from Inverse Photoemission and High Resolution Photoemission Spectroscopy

Authors: Soma Banik, A. Arya, Azzedine Bendounan, M. Maniraj, A. Thamizhavel, I. Vobornik, S. K. Dhar, S. K. Deb

Abstract: The occupied and the unoccupied electronic structure of CeAg$_2$Ge$_2$ single crystal has been studied using high resolution photoemission and inverse photoemission spectroscopy respectively. High resolution photoemission reveals the clear signature of Ce $4f$ states in the occupied electronic structure which was not observed earlier due to the poor resolution. The coulomb correlation energy in th… ▽ More The occupied and the unoccupied electronic structure of CeAg$_2$Ge$_2$ single crystal has been studied using high resolution photoemission and inverse photoemission spectroscopy respectively. High resolution photoemission reveals the clear signature of Ce $4f$ states in the occupied electronic structure which was not observed earlier due to the poor resolution. The coulomb correlation energy in this system has been determined experimentally from the position of the $4f$ states above and below the Fermi level. Theoretically the correlation energy has been determined by using the first principles density functional calculations within the generalized gradient approximations taking into account the strong intra-atomic (on-site) interaction Hubbard $U_{eff}$ term. Although the valence band calculated with different $U_{eff}$ does not show significant difference, but the substantial changes are observed in the conduction band. The estimated value of correlation energy from both the theory and the experiment is $\approx$4.2~eV for CeAg$_2$Ge$_2$. △ Less

Submitted 21 April, 2014; originally announced April 2014.

Comments: Submitted in Journal of Physics: Condensed Matter

Journal ref: J. Phys.: Condens. Matter 26 (2014) 335502

Structural investigations in BaFe2-xRuxAs2 as a function of Ru and temperature

Authors: Shilpam Sharma, A. Bharathi, K. Vinod, C. S. Sundar, V. Srihari, Smritijit Sen, Haranath Ghosh, A. K. Sinha, S. K. Deb

Abstract: We present Synchrotron XRD measurements on powdered single crystal samples of BaFe2-xRuxAs2 samples, as a function of Ru content at room temperature. The Rietveld refinements reveal that the a-axis increases with Ru substitution, while the c-axis decreases. The variation of positional co-ordinates of As (zAs), the Fe-As bond length and the As-Fe-As bond angles have been determined from the Rietvel… ▽ More We present Synchrotron XRD measurements on powdered single crystal samples of BaFe2-xRuxAs2 samples, as a function of Ru content at room temperature. The Rietveld refinements reveal that the a-axis increases with Ru substitution, while the c-axis decreases. The variation of positional co-ordinates of As (zAs), the Fe-As bond length and the As-Fe-As bond angles have been determined from the Rietveld refinements. In the sample with x=0.1, temperature dependent XRD measurements were carried out. The results indicate that while the orthorhombicity shows the characteristic increase with decrease in temperature, the As-Fe-As bond angles, Fe-As bond length and positional co-ordinate of the As show definite anomalies close to the structural transition. First principle ab-initio simulations are performed in order to understand the experimentally observed anomalies in structural parameters. The experimental observations are discussed in the context of the simulation results. △ Less

Submitted 12 May, 2014; v1 submitted 26 December, 2013; originally announced December 2013.

Comments: 17 pages, 8 figures

Journal ref: Acta Cryst. B 71, 61-67 (2015)

Spontaneous electric polarization and Magneto-dielectric coupling in ceramic multiferroic Co3TeO6

Authors: Harishchandra Singh, Haranath Ghosh, A. K. Sinha, M. N. Singh, G. Sharma, S. Patnaik, S. K. Deb

Abstract: We report observation of magneto-electric and magneto-dielectric couplings in ceramic Co3TeO6. Temperature dependent DC magnetization and dielectric constant measurements together indicate coupling between magnetic order and electronic polarization. Strong anomaly in dielectric constant at ~ 18K in zero magnetic field indicates presence of spontaneous polarization. Observations like weak ferromagn… ▽ More We report observation of magneto-electric and magneto-dielectric couplings in ceramic Co3TeO6. Temperature dependent DC magnetization and dielectric constant measurements together indicate coupling between magnetic order and electronic polarization. Strong anomaly in dielectric constant at ~ 18K in zero magnetic field indicates presence of spontaneous polarization. Observations like weak ferromagnetic order at lower temperature, field and temperature dependences of the ferroelectric transition provide experimental verification of the recent theoretical proposal by P. Toledano et al., Phys. Rev. B 85, 214439 (2012). We provide direct evidence of spin-phonon coupling as possible origin of magnetic order. △ Less

Submitted 25 September, 2013; originally announced September 2013.

Comments: 11 pages, 6 figures, 1 table

Silicene Beyond Mono-layers - Different Stacking Configurations And Their Properties

Authors: C. Kamal, Aparna Chakrabarti, Arup Banerjee, S. K. Deb

Abstract: We carry out a computational study on the geometric and electronic properties of multi-layers of silicene in different stacking configurations using a state-of-art abinitio density functional theory based calculations. In this work we investigate the evolution of these properties with increasing number of layers (n) ranging from 1 to 10. Though, mono-layer of silicene possesses properties similar… ▽ More We carry out a computational study on the geometric and electronic properties of multi-layers of silicene in different stacking configurations using a state-of-art abinitio density functional theory based calculations. In this work we investigate the evolution of these properties with increasing number of layers (n) ranging from 1 to 10. Though, mono-layer of silicene possesses properties similar to those of graphene, our results show that the geometric and electronic properties of multi-layers of silicene are strikingly different from those of multi-layers of graphene. We observe that there exist strong inter-layer covalent bondings between the layers in multi-layers of silicene as opposed to weak van der Waal's bonding which exists between the graphene layers. The inter-layer bonding strongly influences the geometric and electronic structures of these multi-layers. Like bi-layers of graphene, silicene with two different stacking configurations AA and AB exhibits linear and parabolic dispersions around the Fermi level, respectively. However, unlike graphene, for bi-layers of silicene, these dispersion curves are shifted in band diagram; this is due to the strong inter-layer bonding present in the latter. For n > 3, we study the geometric and electronic properties of multi-layers with four different stacking configurations namely, AAAA, AABB, ABAB and ABC. Our results on cohesive energy show that all the multi-layers considered are energetically stable. Furthermore, we find that the three stacking configurations (AAAA, AABB and ABC) containing tetrahedral coordination have much higher cohesive energy than that of Bernal (ABAB) stacking configuration. This is in contrast to the case of multi-layers of graphene where ABAB is reported to be the lowest energy configuration. △ Less

Submitted 17 October, 2012; originally announced October 2012.

Comments: 13 figures

Journal ref: Journal of Physics: Condensed Matter, 25, 085508 (2013)

Optical Properties of Graphene-like Two Dimensional Silicene

Authors: Kamal Chinnathambi, Aparna Chakrabarti, Arup Banerjee, S. K. Deb

Abstract: We study optical properties of two dimensional silicene using density functional theory based calculations. Our results on optical response property calculations show that they strongly depend on direction of polarization of light, hence the optical absorption spectra are different for light polarized parallel and perpendicular to plane of silicence. The optical absorption spectra of silicene poss… ▽ More We study optical properties of two dimensional silicene using density functional theory based calculations. Our results on optical response property calculations show that they strongly depend on direction of polarization of light, hence the optical absorption spectra are different for light polarized parallel and perpendicular to plane of silicence. The optical absorption spectra of silicene possess two major peaks: (i) a sharp peak at 1.74 eV due to transition from pi to pi* states and (ii) a broad peak in range of 4-10 eV due to excitation of sigma states to conduction bands. We also investigate the effect of external influences such as (a) transverse static electric field and (b) doping of hydrogen atoms (hydrogenation) on optical properties of silicene. Firstly, with electric field, it is observed that band gap can be opened up in silicene at Fermi level by breaking the inversion symmetry. We see appreciable changes in optical absorption due to band gap opening. Secondly, hydrogenation in silicene strongly modifies the hybridization and our geometry analysis indicates that the hybridization in silicene goes from mixture of sp^2 + sp^3 to purely sp^3. Therefore, there is no pi electron present in the system. Consequently, the electronic structure and optical absorption spectra of silicene get modified and it undergoes a transition from semi-metal to semiconductor due to hydrogenation. △ Less

Submitted 23 May, 2012; originally announced May 2012.

Comments: 12 pages, 6 figures. arXiv admin note: substantial text overlap with arXiv:1202.2636

Elastic and structural instability of cubic Sn3N4 and C3N4 under pressure

Authors: Gopal K. Pradhan, Anil Kumar, Umesh V. Waghmare, Sudip K. Deb, Chandrabhas Narayana

Abstract: We use in-situ high pressure angle dispersive x-ray diffraction measurements to determine the equation of state of cubic tin nitride Sn3N4 under pressure up to about 26 GPa. While we find no evidence for any structural phase transition, our estimate of the bulk modulus (B) is 145 GPa, much lower than the earlier theoretical estimates and that of other group IV-nitrides. We corroborate and underst… ▽ More We use in-situ high pressure angle dispersive x-ray diffraction measurements to determine the equation of state of cubic tin nitride Sn3N4 under pressure up to about 26 GPa. While we find no evidence for any structural phase transition, our estimate of the bulk modulus (B) is 145 GPa, much lower than the earlier theoretical estimates and that of other group IV-nitrides. We corroborate and understand these results with complementary first-principles analysis of structural, elastic and vibrational properties of group IV-nitrides, and predict a structural transition of Sn3N4 at a higher pressure of 88 GPa compared to earlier predictions of 40 GPa. Our comparative analysis of cubic nitrides shows that bulk modulus of cubic C3N4 is the highest (379 GPa) while it is structurally unstable and should not exist at ambient conditions. △ Less

Submitted 11 March, 2010; originally announced March 2010.

Comments: 5 pages, 4 figures

Journal ref: Physical Review B 82, 144112 (2010)

Pressure-induced phonon-freezing in the ZnBeSe alloy: a study via the percolation mesoscope

Authors: Gopal K. Pradhan, Chandrabhas Narayana, Olivier Pages, Abedalhasan Breidi, Jihane Souhabi, Andrei Viktor Postnikov, Fouad El Haj Hassan, Sudip K. Deb, Franciszek Firszt, Wojtek Paszkowicz, Abhay Shukla

Abstract: We use the 1-bond -> 2-phonon percolation doublet of zincblende alloys as a mesoscope for an unusual insight into their phonon behavior under pressure. We focus on (Zn,Be)Se and show by Raman scattering that the original Be-Se doublet at ambient pressure, of the stretching-bending type, turns into a pure-bending singlet at the approach of the high-pressure ZnSe-like rocksalt phase, an unnatural… ▽ More We use the 1-bond -> 2-phonon percolation doublet of zincblende alloys as a mesoscope for an unusual insight into their phonon behavior under pressure. We focus on (Zn,Be)Se and show by Raman scattering that the original Be-Se doublet at ambient pressure, of the stretching-bending type, turns into a pure-bending singlet at the approach of the high-pressure ZnSe-like rocksalt phase, an unnatural one for the Be-Se bonds. The freezing of the Be-Se stretching mode is discussed within the scope of the percolation model (mesoscopic scale), with ab initio calculations in support (microscopic scale). △ Less

Submitted 28 October, 2009; v1 submitted 27 October, 2009; originally announced October 2009.

Comments: 11 pages, 3 figures

Journal ref: Phys. Rev. B 81, 115207 (2010)

Formation of complex films with water-soluble CTAB molecules

Authors: Syed Arshad Hussain, S. Biswas, R. K. Nath, S. Deb, D. Bhattacharjee

Abstract: This communication reports the formation of complex Langmuir monolayer at the air-water interface with the water-soluble -trimethyl ammonium bromide (CTAB) molecules when interacted with the stearic acid (SA) molecules. The reaction kinetics of the formation of the CTAB-SA complex was monitored by observing the surface pressure versus time graph. Multilayered LB films of this complex doped with… ▽ More This communication reports the formation of complex Langmuir monolayer at the air-water interface with the water-soluble -trimethyl ammonium bromide (CTAB) molecules when interacted with the stearic acid (SA) molecules. The reaction kinetics of the formation of the CTAB-SA complex was monitored by observing the surface pressure versus time graph. Multilayered LB films of this complex doped with congo red was successfully formed onto a quartz substrate. UV-Vis absorption and steady state fluorescence spectroscopic characteristics of this doped LB films confirms the successful incorporation of congo red molecules in to the CTAB-SA complex films. △ Less

Submitted 3 December, 2008; originally announced December 2008.

Comments: 11 pages, 5 figures

Spectroscopic characterizations of the mixed Langmuir-Blodgett (LB) films of 2,2'-biquinoline molecules: evidence of dimer formation

Authors: S. Deb, S. Biswas, S. A. Hussain, D. Bhattacharjee

Abstract: This communication reports the -A isotherms and spectroscopic characterizations of mixed Langmuir and Langmuir-Blodgett (LB) films of nonamphiphilic 2, -biquinoline (BQ) molecules, mixed with polymethyl methacrylate (PMMA) and stearic acid (SA). The pi-A isotherms and molefraction versus area per molecule studies indicate complete immiscibility of sample (BQ) and matrix (PMMA or SA) molecules. T… ▽ More This communication reports the -A isotherms and spectroscopic characterizations of mixed Langmuir and Langmuir-Blodgett (LB) films of nonamphiphilic 2, -biquinoline (BQ) molecules, mixed with polymethyl methacrylate (PMMA) and stearic acid (SA). The pi-A isotherms and molefraction versus area per molecule studies indicate complete immiscibility of sample (BQ) and matrix (PMMA or SA) molecules. This immiscibility may lead to the formation of microcrystalline aggregates of BQ molecules in the mixed LB films. The scanning electron micrograph gives the visual evidence of microcrystalline aggregates of BQ molecules in the mixed LB films. UV-Vis absorption, fluorescence and excitation spectroscopic studies reveal the nature of these microcrystalline aggregates. LB films lifted at higher surface pressure indicate the formation of dimer or higher order n-mers. △ Less

Submitted 16 July, 2008; originally announced July 2008.

Comments: 21 pages, 5 figures

Journal ref: Chemical Physics Letters, Vol 405 (2005) 323-329

Raman Scattering Investigation of Electron Phonon Coupling in Carbon substituted MgB2

Authors: T. Sakuntala, A. Bharathi, S. K. Deb, N. Gayathri, C. S. Sundar, Y. Hariharan

Abstract: Room temperature Raman scattering measurements have been carried out on well characterized samples of MgB2-xCx. The Raman line corresponding to the E2g phonon mode shows progressive hardening from 620 cm-1 in pristine MgB2 to 775 cm-1 in the sample with carbon fraction x=0.2. The corresponding line width on the other hand, increases from a value of about 220 cm-1 to 286 cm-1 in samples with x =… ▽ More Room temperature Raman scattering measurements have been carried out on well characterized samples of MgB2-xCx. The Raman line corresponding to the E2g phonon mode shows progressive hardening from 620 cm-1 in pristine MgB2 to 775 cm-1 in the sample with carbon fraction x=0.2. The corresponding line width on the other hand, increases from a value of about 220 cm-1 to 286 cm-1 in samples with x = 0.1, beyond which it decreases to a value 167 cm-1 for x=0.2. From the average mode frequency and the line width obtained from Raman measurements and taking the values of N(0) obtained from the calculated variation in s hole density of states in MgB2-xCx, the electron phonon coupling strength to the E2g phonon, l2g, is evaluated using Allen’s formula. This remains large for low C fraction, but shows rapid decrease for x > 0.10. Using this value of l2g appropriately weighted, TC is obtained from McMillan’s equation. These values are in good agreement with the experimentally measured TC variation in MgB2-xCx. △ Less

Submitted 27 April, 2005; originally announced April 2005.

Comments: PDF format; containing text and figures. accepted for publication in Journal of Physics Condensed Matter

Raman Studies in MgB2-xCx

Authors: T. Sakuntala, S. K. Deb, A. Bharathi, S. Jemima Balaselvi, C. S. Sundar, Y. Hariharan

Abstract: Raman scattering measurements have been carried out in MgB2-xCx for x=0.0 -0.30. The broad Raman band around 600cm-1 range, which corresponds to the E2g mode in MgB2 is seen to narrow and reduce in intensity with increasing carbon content. For x>0.15, new set of bands appear at 1200 cm-1 possibly arising from the B-C, E2g modes. The decrease in Tc with carbon substitution seems to correlate with… ▽ More Raman scattering measurements have been carried out in MgB2-xCx for x=0.0 -0.30. The broad Raman band around 600cm-1 range, which corresponds to the E2g mode in MgB2 is seen to narrow and reduce in intensity with increasing carbon content. For x>0.15, new set of bands appear at 1200 cm-1 possibly arising from the B-C, E2g modes. The decrease in Tc with carbon substitution seems to correlate with this change over. △ Less

Submitted 17 September, 2003; originally announced September 2003.

Comments: Submitted to DAE Solid State Physics Symposium December 2003