Showing 1–38 of 38 results for author: Danilov, S

Magnetophotogalvanic Effects Driven by Terahertz Radiation in CdHgTe Crystals with Kane Fermions

Authors: M. D. Moldavskaya, L. E. Golub, V. V. Bel'kov, S. N. Danilov, D. A. Kozlov, J. Wunderlich, D. Weiss, N. N. Mikhailov, S. A. Dvoretsky, S. S. Krishtopenko, B. Benhamou-Bui, F. Teppe, S. D. Ganichev

Abstract: We report on the observation and comprehensive study of the terahertz radiation induced magneto-photogalvanic effect (MPGE) in bulk CdHgTe crystals hosting Kane fermions. The MPGE has been detected in Cd$_{x}$Hg$_{1-x}$Te films with Cd contents $x = 0.15$ and $0.22$ subjected to an in-plane magnetic field. At liquid helium temperature we observed multiple resonances in MPGE current upon variation… ▽ More We report on the observation and comprehensive study of the terahertz radiation induced magneto-photogalvanic effect (MPGE) in bulk CdHgTe crystals hosting Kane fermions. The MPGE has been detected in Cd$_{x}$Hg$_{1-x}$Te films with Cd contents $x = 0.15$ and $0.22$ subjected to an in-plane magnetic field. At liquid helium temperature we observed multiple resonances in MPGE current upon variation of magnetic field. In the $x = 0.22$ with noninverted band structure, the resonances are caused by cyclotron resonance (CR) and photoionization of an impurity level. In the $x = 0.15$ films with an inverted band structure, they originate from the CR and interband optical transitions. Band structure calculated by the Kane model perfectly describes positions of all resonances. In particularly, the resonant MPGE caused by interband transitions excited by THz radiation is caused by the gapless energy spectrum of Kane fermions realized in materials with certain Cd contents and temperature range. In addition to the resonant MPGE current we detected a nonresonant one due to indirect optical transitions (Drude-like). This contribution has a nonmonotonic magnetic field dependence increasing linearly at low magnetic field $B$, approaching a maximum at moderate field and decreasing at high $B$. While the nonresonant MPGE decreases drastically with increasing temperature, it is well measurable up to room temperature. The developed theory demonstrates that the MPGE current arises due to cubic in momentum spin-dependent terms in the scattering probability. The asymmetry caused by these effects results in a pure spin current which is converted into an electric current due to the Zeeman effect. △ Less

Submitted 19 August, 2024; originally announced August 2024.

Photocurrents in bulk tellurium

Authors: M. D. Moldavskaya, L. E. Golub, S. N. Danilov, V. V. Bel'kov, D. Weiss, S. D. Ganichev

Abstract: We report a comprehensive study of polarized infrared/terahertz photocurrents in bulk tellurium crystals. We observe different photocurrent contributions and show that, depending on the experimental conditions, they are caused by the trigonal photogalvanic effect, the transverse linear photon drag effect, and the magnetic field induced linear and circular photogalvanic effects. All observed photoc… ▽ More We report a comprehensive study of polarized infrared/terahertz photocurrents in bulk tellurium crystals. We observe different photocurrent contributions and show that, depending on the experimental conditions, they are caused by the trigonal photogalvanic effect, the transverse linear photon drag effect, and the magnetic field induced linear and circular photogalvanic effects. All observed photocurrents have not been reported before and are well explained by the developed phenomenological and microscopic theory. We show that the effects can be unambiguously distinguished by studying the polarization, magnetic field, and radiation frequency dependence of the photocurrent. At frequencies around 30 THz, the photocurrents are shown to be caused by the direct optical transitions between subbands in the valence band. At lower frequencies of 1 to 3 THz, used in our experiment, these transitions become impossible and the detected photocurrents are caused by the indirect optical transitions (Drude-like radiation absorption). △ Less

Submitted 6 December, 2023; v1 submitted 24 August, 2023; originally announced August 2023.

Comments: 22 pages, 9 figures

Current-induced enhancement of photo-response in graphene THz radiation detectors

Authors: K. Indykiewicz, C. Bray, C. Consejo, F. Teppe, S. Danilov, S. D. Ganichev, A. Yurgens

Abstract: Thermoelectric readout in a graphene THz radiation detector requires a p-n junction across the graphene channel. Even without an intentional p-n junction, two latent junctions can exist in the vicinity of the electrodes/antennas through the proximity to metal. In a symmetrical structure, these junctions are connected back-to-back and therefore counterbalance each other with regard to rectification… ▽ More Thermoelectric readout in a graphene THz radiation detector requires a p-n junction across the graphene channel. Even without an intentional p-n junction, two latent junctions can exist in the vicinity of the electrodes/antennas through the proximity to metal. In a symmetrical structure, these junctions are connected back-to-back and therefore counterbalance each other with regard to rectification of the ac signal. Because of the Peltier effect, a small dc current results in additional heating in one- and cooling in another p-n junction, thereby breaking the symmetry. The p-n junctions then no longer cancel, resulting in a greatly enhanced rectified signal. This allows to simplify the design and effectively control the sensitivity of the THz-radiation detectors. △ Less

Submitted 6 October, 2022; originally announced October 2022.

Carbon nanotubes for polarization sensitive terahertz plasmonic interferometry

Authors: Y. Matyushkin, S. Danilov, M. Moskotin, G. Fedorov, A. Bochin, I. Gorbenko, V. Kachorovskii, S. Ganichev

Abstract: We report on helicity sensitive photovoltaic terahertz radiation response of a carbon nanotube made in a conguration of a field effect transistor. We find that the magnitude of the rectified voltage is different for clockwise and anticlockwise circularly polarized radiation. We demonstrate that this effect is a fingerprint of the plasma waves interference in the transistor channel. We also find th… ▽ More We report on helicity sensitive photovoltaic terahertz radiation response of a carbon nanotube made in a conguration of a field effect transistor. We find that the magnitude of the rectified voltage is different for clockwise and anticlockwise circularly polarized radiation. We demonstrate that this effect is a fingerprint of the plasma waves interference in the transistor channel. We also find that that the presence of the helicity- and phase-sensitive interference part of the photovoltaic response is a universal phenomenon which is obtained in the systems of different dimensionality with different single particle spectrum. Its magnitude is characteristic of the plasma wave decay length. This opens up a wide avenue for applications in the area of plasmonic interferometry. △ Less

Submitted 9 August, 2021; originally announced August 2021.

Highly superlinear photogalvanic effects in (Bi$_{0.3}$Sb$_{0.7}$)$_2$(Te$_{0.1}$Se$_{0.9}$)$_3$: Probing 3D topological insulator surface states at room temperature

Authors: Sergey N. Danilov, Leonid E. Golub, Thomas Mayer, Andreas Beer, Stefan Binder, Erwin Mönch, Jan Minar, Matthias Kronseder, Christian. H. Back, Dominique Bougeard, Sergey D. Ganichev

Abstract: We report on the observation of complex nonlinear intensity dependence of the circular and linear photogalvanic currents induced by infrared radiation in compensated (Bi$_{0.3}$Sb$_{0.7}$)$_2$(Te$_{0.1}$Se$_{0.9}$)$_3$ 3D topological insulators. The photocurrents are induced by direct optical transitions between topological surface and bulk states. We show that an increase of the radiation intensi… ▽ More We report on the observation of complex nonlinear intensity dependence of the circular and linear photogalvanic currents induced by infrared radiation in compensated (Bi$_{0.3}$Sb$_{0.7}$)$_2$(Te$_{0.1}$Se$_{0.9}$)$_3$ 3D topological insulators. The photocurrents are induced by direct optical transitions between topological surface and bulk states. We show that an increase of the radiation intensity results first in a highly superlinear raise of the amplitude of both types of photocurrents, whereas at higher intensities the photocurrent saturates. Our analysis of the observed nonlinearities shows that the superlinear behavior of the photocurrents is caused by a heating of the electron gas, while the saturation is induced by a slow relaxation of the photoexcited carriers resulting in absorbance bleaching. The observed nonlinearities give access to the Fermi level position with respect to the Dirac point and the energy relaxation times of Dirac fermions providing an experimental room temperature probe for topological surface states. △ Less

Submitted 3 August, 2021; originally announced August 2021.

Comments: 12 pages, 7 figures

Helicity sensitive plasmonic teraherts interferometer

Authors: Y. Matyushkin, S. Danilov, M. Moskotin, V. Belosevich, N. Kaurova, M. Rybin, E. Obraztsova, G. Fedorov, I. Gorbenko, V. Kachorovskii, S. Ganichev

Abstract: Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene Field Effect Transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly-polarized radiation into dc photovoltage caused… ▽ More Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene Field Effect Transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly-polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor interfere inside the channel. The helicity sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. Suggested plasmonic interferometer is capable for measuring of phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensisitve probing of plasma wave excitations in two-dimensional materials. △ Less

Submitted 2 July, 2020; originally announced July 2020.

Infrared/Terahertz Spectra of the Photogalvanic Effect in (Bi,Sb)Te based Three Dimensional Topological Insulators

Authors: H. Plank, J. Pernul, S. Gebert, S. N. Danilov, J. König-Otto, S. Winnerl, M. Lanius, J. Kampmeier, G. Mussler, I. Aguilera, D. Grützmacher, S. D. Ganichev

Abstract: We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi,Sb)Te based three dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the photocurrent is caused by the linear photogalvanic effect (LPGE) excited in the surface states. The photocurrent spectra reveal that at low frequencies th… ▽ More We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi,Sb)Te based three dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the photocurrent is caused by the linear photogalvanic effect (LPGE) excited in the surface states. The photocurrent spectra reveal that at low frequencies the LPGE emerges due to free carrier Drude-like absorption. The spectra allow to determine the room temperature carrier mobilities in the surface states despite the presents of thermally activate residual impurities in the material bulk. In a number of samples we observed an enhancement of the linear photogalvanic effect at frequencies between 30÷60 THz, which is attributed to the excitation of electrons from helical surface to bulk conduction band states. Under this condition and applying oblique incidence we also observed the circular photogalvanic effect driven by the radiation helicity. △ Less

Submitted 30 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. Materials 2, 024202 (2018)

High-frequency rectification in graphene lateral p-n junctions

Authors: Yu. B. Vasilyev, G. Yu. Vasileva, S. Novikov, S. A. Tarasenko, S. N. Danilov, S. D. Ganichev

Abstract: We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions. We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions. △ Less

Submitted 10 November, 2017; originally announced November 2017.

Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies

Authors: Ya. V. Terent'ev, S. N. Danilov, M. V. Durnev, J. Loher, D. Schuh, D. Bougeard, S. V. Ivanov, S. D. Ganichev

Abstract: Circularly-polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in Faraday geometry. Structures with different thickness of the QW barriers have been studied in magnetic field parallel and tilted with respect to the sample normal. Effective electron-hole g-factor has been found by measurement of splitting… ▽ More Circularly-polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in Faraday geometry. Structures with different thickness of the QW barriers have been studied in magnetic field parallel and tilted with respect to the sample normal. Effective electron-hole g-factor has been found by measurement of splitting of polarized magneto-PL lines. Lande factors of electrons have been calculated using the 14-band kp method and g-factor of holes was determined by subtracting the calculated contribution of the electrons from the effective electron-hole g-factor. Anisotropy of the hole g-factor has been studied applying tilted magnetic field. △ Less

Submitted 11 October, 2016; originally announced October 2016.

Opto-Electronic Characterization of Three Dimensional Topological Insulators

Authors: Helene Plank, Sergey N. Danilov, Vasily V. Bel'kov, Vadim A. Shalygin, Jörn Kampmeier, Martin Lanius, Gregor Mussler, Detlev Grützmacher, Sergey D. Ganichev

Abstract: We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in (Bi1-xSbx)2Te3 based three dimensional (3D) topological insulators (TI). In particular, measuring the polarization dependence of the photogalvanic current and scanning w… ▽ More We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in (Bi1-xSbx)2Te3 based three dimensional (3D) topological insulators (TI). In particular, measuring the polarization dependence of the photogalvanic current and scanning with a micrometre sized beam spot across the sample, provides access to (i) topographical inhomogeneity's in the electronic properties of the surface states and (ii) the local domain orientation. An important advantage of the proposed method is that it can be applied to study TIs at room temperature and even in materials with a high electron density of bulk carriers. △ Less

Submitted 12 July, 2016; originally announced July 2016.

Comments: 6 pages, 4 figures

Circular photon drag effect in bulk tellurium

Authors: V. A. Shalygin, M. D. Moldavskaya, S. N. Danilov, I. I. Farbshtein, L. E. Golub

Abstract: The circular photon drag effect is observed in a bulk semiconductor. The photocurrent caused by a transfer of both translational and angular momenta of light to charge carriers is detected in tellurium in the mid-infrared frequency range. Dependencies of the photocurrent on the light polarization and on the incidence angle agree with the symmetry analysis of the circular photon drag effect. Micros… ▽ More The circular photon drag effect is observed in a bulk semiconductor. The photocurrent caused by a transfer of both translational and angular momenta of light to charge carriers is detected in tellurium in the mid-infrared frequency range. Dependencies of the photocurrent on the light polarization and on the incidence angle agree with the symmetry analysis of the circular photon drag effect. Microscopic models of the effect are developed for both intra- and inter-subband optical absorption in the valence band of tellurium. The shift contribution to the circular photon drag current is calculated. An observed decrease of the circular photon drag current with increase of the photon energy is explained by the theory for inter-subband optical transitions. Theoretical estimates of the circular photon drag current agree with the experimental data. △ Less

Submitted 14 October, 2015; originally announced October 2015.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. B 93, 045207 (2016)

Magnetooptical Study of Zeeman Effect in Mn modulation-doped InAs/InGaAs/InAlAs Quantum Well Structures

Authors: Ya. V. Terent'ev, S. N. Danilov, H. Plank, J. Loher, D. Schuh, D. Bougeard, D. Weiss, M. V. Durnev, S. A. Tarasenko, I. V. Rozhansky, S. V. Ivanov, D. R. Yakovlev, S. D. Ganichev

Abstract: We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field… ▽ More We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field dependences of the splitting are well described by the Brillouin function, providing an evidence for exchange interaction with spin polarized manganese ions, the value of the splitting exceeds the expected value of the giant Zeeman splitting by two orders of magnitude for a given Mn density. Possible reasons of this striking observation are discussed. △ Less

Submitted 21 February, 2015; originally announced February 2015.

Room temperature high frequency transport of Dirac fermions in epitaxially grown Sb_2Te_3 based topological insulators

Authors: P. Olbrich, L. E. Golub, T. Herrmann, S. N. Danilov, H. Plank, V. V. Bel'kov, G. Mussler, Ch. Weyrich, C. M. Schneider, J. Kampmeier, D. Grützmacher, L. Plucinski, M. Eschbach, S. D. Ganichev

Abstract: We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric field results in a dc electric current. Due to the "symmetry filtration" the dc current is generated in the surface electrons only and provides an opto-electronic… ▽ More We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric field results in a dc electric current. Due to the "symmetry filtration" the dc current is generated in the surface electrons only and provides an opto-electronic access to probe the electric transport in TI, surface domains orientation and details of electron scattering even in 3D TI at room temperature where conventional surface electron transport is usually hindered by the high carrier density in the bulk. △ Less

Submitted 28 February, 2014; originally announced February 2014.

Journal ref: Phys. Rev. Lett. 113, 096601 (2014)

Magneto-Photoluminescence of InAs/InGaAs/InAlAs quantum well structures

Authors: Ya. V. Terent'ev, S. N. Danilov, J. Loher, D. Schuh, D. Bougeard, D. Weiss, M. V. Durnev, S. A. Tarasenko, M. S. Mukhin, S. V. Ivanov, S. D. Ganichev

Abstract: Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QW. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by… ▽ More Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QW. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by the Zeeman effect. Although in magnetic field the PL line are strongly circularly polarized, no energy shift between the counter-polarized PL lines was observed. The results suggest that the electron and the hole g-factor to be of the same sign and close magnitudes. △ Less

Submitted 30 January, 2014; v1 submitted 29 January, 2014; originally announced January 2014.

Probing of electromagnetic fields on atomic scale by photoelectric phenomena in graphene

Authors: Peter Olbrich, Christoph Drexler, Leonid E. Golub, Sergey N. Danilov, Vadim A. Shalygin, Rositza Yakimova, Samuel Lara-Avila, Sergey Kubatkin, Britta Redlich, Rupert Huber, Sergey D. Ganichev

Abstract: We report on the observation of the reststrahl band assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that n… ▽ More We report on the observation of the reststrahl band assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in 2D crystals and other atomic scale structures can be giantly enhanced by a proper combination of the spectral range and substrate material. △ Less

Submitted 1 August, 2013; originally announced August 2013.

Helicity-dependent photocurrents in graphene layers excited by mid-infrared radiation of a CO$_2$-laser

Authors: Chongyun Jiang, V. A. Shalygin, V. Yu. Panevin, S. N. Danilov, M. M. Glazov, R. Yakimova, S. Lara-Avila, S. Kubatkin, S. D. Ganichev

Abstract: We report the study of the helicity driven photocurrents in graphene excited by mid-infrared light of a CO$_2$-laser. Illuminating an unbiased monolayer sheet of graphene with circularly polarized radiation generates -- under oblique incidence -- an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. We show that the current is caus… ▽ More We report the study of the helicity driven photocurrents in graphene excited by mid-infrared light of a CO$_2$-laser. Illuminating an unbiased monolayer sheet of graphene with circularly polarized radiation generates -- under oblique incidence -- an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. We show that the current is caused by the interplay of the circular $ac$ Hall effect and the circular photogalvanic effect. Studying the frequency dependence of the current in graphene layers grown on the SiC substrate we observe that the current exhibits a resonance at frequencies matching the longitudinal optical phonon in SiC. △ Less

Submitted 31 May, 2011; originally announced May 2011.

Circular photogalvanic effect in HgTe/CdHgTe quantum well structures

Authors: B. Wittmann, S. N. Danilov, V. V. Bel'kov, S. A. Tarasenko, E. G. Novik, H. Buhmann, C. Brüne, L. W. Molenkamp, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, N. Q. Vinh, A. F. G. van der Meer, B. Murdin, S. D. Ganichev

Abstract: We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state an… ▽ More We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed. △ Less

Submitted 12 February, 2010; originally announced February 2010.

Nonlinear magneto-gyrotropic photogalvanic effect

Authors: H. Diehl, V. A. Shalygin, L. E. Golub, S. A. Tarasenko, S. N. Danilov, V. V. Bel'kov, E. G. Novik, H. Buhmann, C. Brüne, E. L. Ivchenko, S. D. Ganichev

Abstract: We report on the observation of nonlinear magneto-gyrotropic photogalvanic effect in HgTe/HgCdTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the heterostructures is shown to cause a dc electric current in the presence of an in-plane magnetic field. A cubic in magnetic field component of the photocurrent is obs… ▽ More We report on the observation of nonlinear magneto-gyrotropic photogalvanic effect in HgTe/HgCdTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the heterostructures is shown to cause a dc electric current in the presence of an in-plane magnetic field. A cubic in magnetic field component of the photocurrent is observed in quantum wells with the inverted band structure only. The experimental data are discussed in terms of both the phenomenological theory and microscopic models. △ Less

Submitted 20 May, 2009; originally announced May 2009.

Comments: 10 pages, 9 figures

Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures

Authors: S. N. Danilov, B. Wittmann, P. Olbrich, W. Eder, W. Prettl, L. E. Golub, E. V. Beregulin, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, V. A. Shalygin, N. Q. Vinh, A. F. G. van der Meer, B. Murdin, S. D. Ganichev

Abstract: We report a fast, room temperature detection scheme for the polarization ellipticity of laser radiation, with a bandwidth that stretches from the infrared to the terahertz range. The device consists of two elements, one in front of the other, that detect the polarization ellipticity and the azimuthal angle of the ellipse. The elements respectively utilise the circular photogalvanic effect in a n… ▽ More We report a fast, room temperature detection scheme for the polarization ellipticity of laser radiation, with a bandwidth that stretches from the infrared to the terahertz range. The device consists of two elements, one in front of the other, that detect the polarization ellipticity and the azimuthal angle of the ellipse. The elements respectively utilise the circular photogalvanic effect in a narrow gap semiconductor and the linear photogalvanic effect in a bulk piezoelectric semiconductor. For the former we characterized both a HgTe quantum well and bulk Te, and for the latter, bulk GaAs. In contrast with optical methods our device is an easy to handle all-electric approach, which we demonstrated by applying a large number of different lasers from low power, continuous wave systems to high power, pulsed sources. △ Less

Submitted 7 October, 2008; originally announced October 2008.

Comments: 7 pages, 5 figures

Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions

Authors: B. Wittmann, L. E. Golub, S. N. Danilov, J. Karch, C. Reitmaier, Z. D. Kvon, N. Q. Vinh, A. F. G. van der Meer, B. Murdin, S. D. Ganichev

Abstract: The resonant circular photogalvanic effect is observed in wurtzite (0001)-oriented GaN low-dimensional structures excited by infrared radiation. The current is induced by angular momentum transfer of photons to the photoexcited electrons at resonant inter-subband optical transitions in a GaN/AlGaN heterojunction. The signal reverses upon the reversal of the radiation helicity or, at fixed helici… ▽ More The resonant circular photogalvanic effect is observed in wurtzite (0001)-oriented GaN low-dimensional structures excited by infrared radiation. The current is induced by angular momentum transfer of photons to the photoexcited electrons at resonant inter-subband optical transitions in a GaN/AlGaN heterojunction. The signal reverses upon the reversal of the radiation helicity or, at fixed helicity, when the propagation direction of the photons is reversed. Making use of the tunability of the free-electron laser FELIX we demonstrate that the current direction changes by sweeping the photon energy through the intersubband resonance condition, in agreement with theoretical considerations. △ Less

Submitted 16 September, 2008; originally announced September 2008.

Ratchet effects induced by terahertz radiation in heterostructures with a lateral periodic potential

Authors: P. Olbrich, E. L. Ivchenko, T. Feil, R. Ravash, S. D. Danilov, J. Allerdings, D. Weiss, S. D. Ganichev

Abstract: We report on the observation of terahertz radiation induced photogalvanic currents in semiconductor heterostructures with one-dimensional lateral periodic potential. The potential is produced by etching a grating into the sample surface. The electric current response is well described by phenomenological theory including both the circular and linear photogalvanic effects. Experimental data demon… ▽ More We report on the observation of terahertz radiation induced photogalvanic currents in semiconductor heterostructures with one-dimensional lateral periodic potential. The potential is produced by etching a grating into the sample surface. The electric current response is well described by phenomenological theory including both the circular and linear photogalvanic effects. Experimental data demonstrate that the inversion asymmetry of the periodic lateral pattern can be varied by means of electron beam lithography to produce classical lateral ratchets. A novel microscopical mechanism for the polarization-dependent photogalvanic effects has been proposed to interpret the experimental findings. The photocurrent generation is based on the combined action of the lateral periodic potential and the modulated in-plane pumping. The latter modulation stems from near-field effects of the radiation propagating through the grating. △ Less

Submitted 14 August, 2008; originally announced August 2008.

Comments: 8 pages, 6 figures

Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures

Authors: W. Weber, L. E. Golub, S. N. Danilov, J. Karch, C. Reitmaier, B. Wittmann, V. V. Bel'kov, E. L. Ivchenko, Z. D. Kvon, N. Q. Vinh, A. F. G. van der Meer, B. Murdin, S. D. Ganichev

Abstract: Photogalvanic effects are observed and investigated in wurtzite (0001)-oriented GaN/AlGaN low-dimensional structures excited by terahertz radiation. The structures are shown to represent linear quantum ratchets. Experimental and theoretical analysis exhibits that the observed photocurrents are related to the lack of an inversion center in the GaN-based heterojunctions. Photogalvanic effects are observed and investigated in wurtzite (0001)-oriented GaN/AlGaN low-dimensional structures excited by terahertz radiation. The structures are shown to represent linear quantum ratchets. Experimental and theoretical analysis exhibits that the observed photocurrents are related to the lack of an inversion center in the GaN-based heterojunctions. △ Less

Submitted 7 May, 2008; v1 submitted 2 April, 2008; originally announced April 2008.

Comments: technical reasons

All-electric detectors of the polarization state of terahertz laser radiation (extended version)

Authors: S. D. Ganichev, W. Weber, J. Kiermaier, S. N. Danilov, D. Schuh, W. Wegscheider, Ch. Gerl, W. Prettl, D. Bougeard, G. Abstreiter

Abstract: Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the ellipticity of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry. The ph… ▽ More Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the ellipticity of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry. The photogalvanic effects have sub-nanosecond time constants at room temperature making a high time resolution of the polarization detectors possible. △ Less

Submitted 6 May, 2008; v1 submitted 28 September, 2007; originally announced September 2007.

Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems

Authors: W. Weber, S. Seidl, S. N. Danilov, W. Prettl, V. V. Bel'kov, L. E. Golub, E. L. Ivchenko, Z. D. Kvon, Hyun-Ick Cho, Jung-Hee Lee, S. D. Ganichev

Abstract: The magneto-gyrotropic photogalvanic and spin-galvanic effects are observed in (0001)-oriented GaN/AlGaN heterojunctions excited by terahertz radiation. We show that free-carrier absorption of linearly or circularly polarized terahertz radiation in low-dimensional structures causes an electric photocurrent in the presence of an in-plane magnetic field. Microscopic mechanisms of these photocurren… ▽ More The magneto-gyrotropic photogalvanic and spin-galvanic effects are observed in (0001)-oriented GaN/AlGaN heterojunctions excited by terahertz radiation. We show that free-carrier absorption of linearly or circularly polarized terahertz radiation in low-dimensional structures causes an electric photocurrent in the presence of an in-plane magnetic field. Microscopic mechanisms of these photocurrents based on spin-related phenomena are discussed. Properties of the magneto-gyrotropic and spin-galvanic effects specific for hexagonal heterostructures are analyzed. △ Less

Submitted 27 September, 2007; originally announced September 2007.

Comments: Accepted for publication in Solid State Communications

Cyclotron resonance photoconductivity of a two-dimensional electron gas in HgTe quantum wells

Authors: Ze-Don Kvon, Sergey N. Danilov, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Wilhelm Prettl, Sergey D. Ganichev

Abstract: Far-infrared cyclotron resonance photoconductivity (CRP) is investigated in HgTe quantum wells (QWs) of various widths grown on (013) oriented GaAs substrates. It is shown that CRP is caused by the heating of two-dimensional electron gas (2DEG). From the resonance magnetic field strength effective masses and their dependence on the carrier concentration is obtained. We found that the effective m… ▽ More Far-infrared cyclotron resonance photoconductivity (CRP) is investigated in HgTe quantum wells (QWs) of various widths grown on (013) oriented GaAs substrates. It is shown that CRP is caused by the heating of two-dimensional electron gas (2DEG). From the resonance magnetic field strength effective masses and their dependence on the carrier concentration is obtained. We found that the effective mass in each sample slightly increases from the value (0.0260 \pm 0.0005)m_0 at N_s = 2.2x10^11 cm^(-2) to (0.0335 \pm 0.0005)m_0 at N_s = 9.6x10^11 cm^(-2). Compared to determination of effective masses by the temperature dependence of magnitudes of the Shubnikov-de Haas (SdH) oscillations used so far in this material our measurements demonstrate that the CRP provides a more accurate (about few percents) tool. Combining optical methods with transport measurements we found that the transport time substantially exceeds the cyclotron resonance lifetime as well as the quantum lifetime which is the shortest. △ Less

Submitted 16 August, 2007; originally announced August 2007.

Comments: 3 pages, 2 figures

Photogalvanic effects in HgTe quantum wells

Authors: B. Wittmann, R. Ravash, H. Diehl, S. N. Danilov, Z. D. Kvon, S. A. Tarasenko, E. L. Ivchenko, N. N. Mikhailov, S. A. Dvoretsky, W. Prettl, S. D. Ganichev

Abstract: We report on the observation of the terahertz radiation induced circular (CPGE) and linear (LPGE) photogalvanic effects in HgTe quantum wells. The current response is well described by the phenomenological theory of CPGE and LPGE. We report on the observation of the terahertz radiation induced circular (CPGE) and linear (LPGE) photogalvanic effects in HgTe quantum wells. The current response is well described by the phenomenological theory of CPGE and LPGE. △ Less

Submitted 16 August, 2007; originally announced August 2007.

Comments: 2 pages, 2 figures

Magneto-gyrotropic photogalvanic effects due to inter-subband absorption in quantum wells

Authors: H. Diehl, V. A. Shalygin, S. N. Danilov, S. A. Tarasenko, V. V. Bel'kov, D. Schuh, W. Wegscheider, W. Prettl, S. D. Ganichev

Abstract: We report on the observation of the magneto-photogalvanic effect (MPGE) due to inter-subband transitions in (001)-oriented GaAs quantum wells. This effect is related to the gyrotropic properties of the structures. It is shown that inter-subband absorption of linearly polarized radiation may lead to spin-related as well as spin independent photocurrents if an external magnetic field is applied in… ▽ More We report on the observation of the magneto-photogalvanic effect (MPGE) due to inter-subband transitions in (001)-oriented GaAs quantum wells. This effect is related to the gyrotropic properties of the structures. It is shown that inter-subband absorption of linearly polarized radiation may lead to spin-related as well as spin independent photocurrents if an external magnetic field is applied in the plane of the quantum well. The experimental results are analyzed in terms of the phenomenological theory and microscopic models of MPGE based on either asymmetric optical excitation or asymmetric relaxation of carriers in k-space. We observed resonant photocurrents not only at oblique incidence of radiation but also at normal incidence demonstrating that conventionally applied selection rules for the inter-subband optical transitions are not rigorous. △ Less

Submitted 1 August, 2007; originally announced August 2007.

Subnanosecond Ellipticity Detector for Laser Radiation (second version, extended)

Authors: S. D. Ganichev, W. Weber, J. Kiermaier, S. N. Danilov, P. Olbrich, D. Schuh, W. Wegscheider, D. Bougeard, G. Abstreiter, W. Prettl

Abstract: Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the Stokes parameters of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry.… ▽ More Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the Stokes parameters of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry. The photogalvanic effects have nanoseconds time constants at room temperature making a high time resolution of the polarization detectors possible. △ Less

Submitted 18 March, 2008; v1 submitted 31 July, 2007; originally announced July 2007.

Pure spin currents induced by spin-dependent scattering processes in SiGe quantum well structures

Authors: S. D. Ganichev, S. N. Danilov, V. V. Bel'kov, S. Giglberger, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, W. Jantsch, F. Schaeffler, D. Gruber, W. Prettl

Abstract: We show that spin-dependent electron-phonon interaction in the energy relaxation of a two-dimensional electron gas results in equal and oppositely directed currents in the spin-up and spin-down subbands yielding a pure spin current. In our experiments on SiGe heterostructures the pure spin current is converted into an electric current applying a magnetic field that lifts the cancellation of the… ▽ More We show that spin-dependent electron-phonon interaction in the energy relaxation of a two-dimensional electron gas results in equal and oppositely directed currents in the spin-up and spin-down subbands yielding a pure spin current. In our experiments on SiGe heterostructures the pure spin current is converted into an electric current applying a magnetic field that lifts the cancellation of the two partial charge flows. A microscopic theory of this effect, taking account of the asymmetry of the relaxation process, is developed being in a good agreement with the experimental data. △ Less

Submitted 26 October, 2006; originally announced October 2006.

Comments: 6 pages, 4 figures

Spin photocurrents and circular photon drag effect in (110)-grown quantum well structures

Authors: V. A. Shalygin, H. Diehl, Ch. Hoffmann, S. N. Danilov, T. Herrle, S. A. Tarasenko, D. Schuh, Ch. Gerl, W. Wegscheider, W. Prettl, S. D. Ganichev

Abstract: We report on the study of spin photocurrents in (110)-grown quantum well structures. Investigated effects comprise the circular photogalvanic effect and so far not observed circular photon drag effect. The experimental data can be described by an analytical expression derived from a phenomenological theory. A microscopic model of the circular photon drag effect is developed demonstrating that th… ▽ More We report on the study of spin photocurrents in (110)-grown quantum well structures. Investigated effects comprise the circular photogalvanic effect and so far not observed circular photon drag effect. The experimental data can be described by an analytical expression derived from a phenomenological theory. A microscopic model of the circular photon drag effect is developed demonstrating that the generated current has spin dependent origin. △ Less

Submitted 20 October, 2006; originally announced October 2006.

Comments: 6 pages, 3 figures

Journal ref: Pis'ma Zh. Eksp. Teor. Fiz. 84, 666 (2006) [JETP Lett. 84, 570 (2006)]

Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells Measured by Spin Photocurrents

Authors: S. Giglberger, L. E. Golub, V. V. Bel'kov, S. N. Danilov, D. Schuh, Ch. Gerl, F. Rohlfing, J. Stahl, W. Wegscheider, D. Weiss, W. Prettl, S. D. Ganichev

Abstract: The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are applied to determine the relative strengths of Rashba and Dresselhaus band spin-splitting in (001)-grown GaAs and InAs based two dimensional electron systems. We observed that shifting the $δ$-doping plane from one side of the quantum well to the other results in a change of sign of the photocurrent… ▽ More The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are applied to determine the relative strengths of Rashba and Dresselhaus band spin-splitting in (001)-grown GaAs and InAs based two dimensional electron systems. We observed that shifting the $δ$-doping plane from one side of the quantum well to the other results in a change of sign of the photocurrent caused by Rashba spin-splitting while the sign of the Dresselhaus term induced photocurrent remains. The measurements give the necessary feedback for technologists looking for structures with equal Rashba and Dresselhaus spin-splittings or perfectly symmetric structures with zero Rashba constant. △ Less

Submitted 2 October, 2006; v1 submitted 22 September, 2006; originally announced September 2006.

Comments: 9 pages, 6 figures

Zero-bias spin separation

Authors: Sergey D. Ganichev, Vasily V. Bel'kov, Sergey A. Tarasenko, Sergey N. Danilov, Stephan Giglberger, Christoph Hoffmann, Eougenious L. Ivchenko, Dieter Weiss, Werner Wegscheider, Christian Gerl, Dieter Schuh, Joachim Stahl, Joan De Boeck, Gustaaf Borghs, Wilhelm Prettl

Abstract: Spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electrical current drives a transverse spin current and causes a nonequilibrium spin accumulation observed near the sample boundary, the spin-galvanic effect, where a nonequilibrium spin polarization drives an electric… ▽ More Spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electrical current drives a transverse spin current and causes a nonequilibrium spin accumulation observed near the sample boundary, the spin-galvanic effect, where a nonequilibrium spin polarization drives an electric current, or the reverse process, in which an electrical current generates a nonequilibrium spin polarization, are all consequences of spin-orbit coupling. In order to observe a spin Hall effect a bias driven current is an essential prerequisite. The spin separation is caused via spin-orbit coupling either by Mott scattering (extrinsic spin Hall effect) or by Rashba or Dresselhaus spin splitting of the band structure (intrinsic spin Hall effect). Here we provide evidence for an elementary effect causing spin separation which is fundamentally different from that of the spin Hall effect. In contrast to the spin Hall effect it does not require an electric current to flow: It is spin separation achieved by spin-dependent scattering of electrons in media with suitable symmetry. We show that by free carrier (Drude) absorption of terahertz radiation spin separation is achieved in a wide range of temperatures from liquid helium up to room temperature. Moreover the experimental results give evidence that simple electron gas heating by any means is already sufficient to yield spin separation due to spin-dependent energy relaxation processes of nonequilibrium carriers. △ Less

Submitted 24 May, 2006; v1 submitted 23 May, 2006; originally announced May 2006.

Comments: 19 pages, 4 figures, 1 table

Demonstration of Rashba spin splitting in GaN-based heterostructures

Authors: W. Weber, S. D. Ganichev, Z. D. Kvon, V. V. Bel'kov, L. E. Golub, S. N. Danilov, D. Weiss, W. Prettl, Hyun-Ick Cho, Jung-Hee Lee

Abstract: The circular photogalvanic effect (CPGE), induced by infrared radiation, has been observed in (0001)-oriented GaN quantum well (QW) structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence of spin-splitting of the conduction band in k-space in this type of materials. The observation suggests the presence of a sizeable Rashba type of spin-splitti… ▽ More The circular photogalvanic effect (CPGE), induced by infrared radiation, has been observed in (0001)-oriented GaN quantum well (QW) structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence of spin-splitting of the conduction band in k-space in this type of materials. The observation suggests the presence of a sizeable Rashba type of spin-splitting, caused by the built-in asymmetry at the AlGaN/GaN interface. △ Less

Submitted 8 September, 2005; originally announced September 2005.

Comments: 7 pages, 3 figures

Magneto-Gyrotropic Photogalvanic Effects in Semiconductor Quantum Wells

Authors: V. V. Bel'kov, S. D. Ganichev, E. L. Ivchenko, S. A. Tarasenko, W. Weber, S. Giglberger, M. Olteanu, H. -P. Tranitz, S. N. Danilov, Petra Schneider, W. Wegscheider, D. Weiss, W. Prettl

Abstract: We show that free-carrier (Drude) absorption of both polarized and unpolarized terahertz radiation in quantum well (QW) structures causes an electric photocurrent in the presence of an in-plane magnetic field. Experimental and theoretical analysis evidences that the observed photocurrents are spin-dependent and related to the gyrotropy of the QWs. Microscopic models for the photogalvanic effects… ▽ More We show that free-carrier (Drude) absorption of both polarized and unpolarized terahertz radiation in quantum well (QW) structures causes an electric photocurrent in the presence of an in-plane magnetic field. Experimental and theoretical analysis evidences that the observed photocurrents are spin-dependent and related to the gyrotropy of the QWs. Microscopic models for the photogalvanic effects in QWs based on asymmetry of photoexcitation and relaxation processes are proposed. In most of the investigated structures the observed magneto-induced photocurrents are caused by spin-dependent relaxation of non-equilibrium carriers. △ Less

Submitted 8 February, 2005; originally announced February 2005.

Can an electric current orient spins in quantum wells?

Authors: S. D. Ganichev, S. N. Danilov, Petra Schneider, V. V. Bel'kov, L. E. Golub, W. Wegscheider, D. Weiss, W. Prettl

Abstract: A longstanding theoretical prediction is the orientation of spins by an electrical current flowing through low-dimensional carrier systems of sufficiently low crystallographic symmetry. Here we show by means of terahertz transmission experiments through two-dimensional hole systems a growing spin orientation with an increasing current at room temperature. A longstanding theoretical prediction is the orientation of spins by an electrical current flowing through low-dimensional carrier systems of sufficiently low crystallographic symmetry. Here we show by means of terahertz transmission experiments through two-dimensional hole systems a growing spin orientation with an increasing current at room temperature. △ Less

Submitted 25 March, 2004; originally announced March 2004.

Comments: 5 pages, 2 figures

Spin relaxation times of 2D holes from spin sensitive bleaching of inter-subband absorption

Authors: Petra Schneider, J. Kainz, S. D. Ganichev, V. V. Bel'kov, S. N. Danilov, M. M. Glazov, L. E. Golub, U. Roessler, W. Wegscheider, D. Weiss, D. Schuh, W. Prettl

Abstract: We present spin relaxation times of 2D holes obtained by means of spin sensitive bleaching of the absorption of infrared radiation in p-type GaAs/AlGaAs quantum wells (QWs). It is shown that the saturation of inter-subband absorption of circularly polarized radiation is mainly controlled by the spin relaxation time of the holes. The saturation behavior has been determined for different QW widths… ▽ More We present spin relaxation times of 2D holes obtained by means of spin sensitive bleaching of the absorption of infrared radiation in p-type GaAs/AlGaAs quantum wells (QWs). It is shown that the saturation of inter-subband absorption of circularly polarized radiation is mainly controlled by the spin relaxation time of the holes. The saturation behavior has been determined for different QW widths and in a wide temperature range with the result that the saturation intensity substantially decreases with narrowing of the QWs. Spin relaxation times are derived from the measured saturation intensities by making use of calculated (linear) absorption coefficients for direct inter-subband transitions. It is shown that spin relaxation is due to the D'yakonov-Perel' mechanism governed by hole-hole scattering. The problem of selection rules is addressed. △ Less

Submitted 24 February, 2004; originally announced February 2004.

Comments: 14 pages, 5 figures

Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation

Authors: S. D. Ganichev, S. N. Danilov, M. Sollinger, J. Zimmermann, A. S. Moskalenko, V. I. Perel, I. N. Yassievich, C. Back, W. Prettl

Abstract: A suppression of tunnelling ionization of deep impurities in terahertz frequency electric fields by a magnetic field is observed. It is shown that the ionization probability at external magnetic field, B, oriented perpendicular to the electric field of terahertz radiation, E, is substantially smaller than that at B || E. The effect occurs at low temperatures and high magnetic fields. A suppression of tunnelling ionization of deep impurities in terahertz frequency electric fields by a magnetic field is observed. It is shown that the ionization probability at external magnetic field, B, oriented perpendicular to the electric field of terahertz radiation, E, is substantially smaller than that at B || E. The effect occurs at low temperatures and high magnetic fields. △ Less

Submitted 19 August, 2003; originally announced August 2003.

Spin sensitive bleaching and monopolar spin orientation in quantum wells

Authors: S. D. Ganichev, S. N. Danilov, V. V. Bel'kov, E. L. Ivchenko, M. Bichler, W. Wegscheider, D. Weiss, W. Prettl

Abstract: Spin sensitive bleaching of the absorption of far-infrared radiation has been observed in $p$-type GaAs/AlGaAs quantum well structures. The absorption of circularly polarized radiation saturates at lower intensities than that of linearly polarized light due to monopolar spin orientation in the first heavy hole subband. Spin relaxation times of holes in $p$-type material in the range of tens of p… ▽ More Spin sensitive bleaching of the absorption of far-infrared radiation has been observed in $p$-type GaAs/AlGaAs quantum well structures. The absorption of circularly polarized radiation saturates at lower intensities than that of linearly polarized light due to monopolar spin orientation in the first heavy hole subband. Spin relaxation times of holes in $p$-type material in the range of tens of ps were derived from the intensity dependence of the absorption. △ Less

Submitted 27 July, 2001; v1 submitted 23 July, 2001; originally announced July 2001.

Comments: Figures have been updated due to technical printing problems (Postscript mismatch)