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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1711.03803 (cond-mat)
[Submitted on 10 Nov 2017]

Title:High-frequency rectification in graphene lateral p-n junctions

Authors:Yu. B. Vasilyev, G. Yu. Vasileva, S. Novikov, S. A. Tarasenko, S. N. Danilov, S. D. Ganichev
View a PDF of the paper titled High-frequency rectification in graphene lateral p-n junctions, by Yu. B. Vasilyev and 5 other authors
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Abstract:We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1711.03803 [cond-mat.mes-hall]
  (or arXiv:1711.03803v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1711.03803
arXiv-issued DOI via DataCite
Related DOI: https://doi.org/10.1063/1.5013100
DOI(s) linking to related resources

Submission history

From: Sergey Ganichev [view email]
[v1] Fri, 10 Nov 2017 13:15:36 UTC (159 KB)
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