Showing 1–42 of 42 results for author: Camsari, K

Probabilistic Approximate Optimization: A New Variational Monte Carlo Algorithm

Authors: Abdelrahman S. Abdelrahman, Shuvro Chowdhury, Flaviano Morone, Kerem Y. Camsari

Abstract: We introduce a generalized \textit{Probabilistic Approximate Optimization Algorithm (PAOA)}, a classical variational Monte Carlo framework that extends and formalizes prior work by Weitz \textit{et al.}~\cite{Combes_2023}, enabling parameterized and fast sampling on present-day Ising machines and probabilistic computers. PAOA operates by iteratively modifying the couplings of a network of binary s… ▽ More We introduce a generalized \textit{Probabilistic Approximate Optimization Algorithm (PAOA)}, a classical variational Monte Carlo framework that extends and formalizes prior work by Weitz \textit{et al.}~\cite{Combes_2023}, enabling parameterized and fast sampling on present-day Ising machines and probabilistic computers. PAOA operates by iteratively modifying the couplings of a network of binary stochastic units, guided by cost evaluations from independent samples. We establish a direct correspondence between derivative-free updates and the gradient of the full $2^N \times 2^N$ Markov flow, showing that PAOA admits a principled variational formulation. Simulated annealing emerges as a limiting case under constrained parameterizations, and we implement this regime on an FPGA-based probabilistic computer with on-chip annealing to solve large 3D spin-glass problems. Benchmarking PAOA against QAOA on the canonical 26-spin Sherrington-Kirkpatrick model with matched parameters reveals superior performance for PAOA. We show that PAOA naturally extends simulated annealing by optimizing multiple temperature profiles, leading to improved performance over SA on heavy-tailed problems such as SK-Lévy. △ Less

Submitted 10 July, 2025; originally announced July 2025.

Two-dimensional Parallel Tempering for Constrained Optimization

Authors: Corentin Delacour, M Mahmudul Hasan Sajeeb, Joao P. Hespanha, Kerem Y. Camsari

Abstract: Sampling Boltzmann probability distributions plays a key role in machine learning and optimization, motivating the design of hardware accelerators such as Ising machines. While the Ising model can in principle encode arbitrary optimization problems, practical implementations are often hindered by soft constraints that either slow down mixing when too strong, or fail to enforce feasibility when too… ▽ More Sampling Boltzmann probability distributions plays a key role in machine learning and optimization, motivating the design of hardware accelerators such as Ising machines. While the Ising model can in principle encode arbitrary optimization problems, practical implementations are often hindered by soft constraints that either slow down mixing when too strong, or fail to enforce feasibility when too weak. We introduce a two-dimensional extension of the powerful parallel tempering algorithm (PT) that addresses this challenge by adding a second dimension of replicas interpolating the penalty strengths. This scheme ensures constraint satisfaction in the final replicas, analogous to low-energy states at low temperature. The resulting two-dimensional parallel tempering algorithm (2D-PT) improves mixing in heavily constrained replicas and eliminates the need to explicitly tune the penalty strength. In a representative example of graph sparsification with copy constraints, 2D-PT achieves near-ideal mixing, with Kullback-Leibler divergence decaying as O(1/t). When applied to sparsified Wishart instances, 2D-PT yields orders of magnitude speedup over conventional PT with the same number of replicas. The method applies broadly to constrained Ising problems and can be deployed on existing Ising machines. △ Less

Submitted 24 May, 2025; originally announced June 2025.

Pushing the Boundary of Quantum Advantage in Hard Combinatorial Optimization with Probabilistic Computers

Authors: Shuvro Chowdhury, Navid Anjum Aadit, Andrea Grimaldi, Eleonora Raimondo, Atharva Raut, P. Aaron Lott, Johan H. Mentink, Marek M. Rams, Federico Ricci-Tersenghi, Massimo Chiappini, Luke S. Theogarajan, Tathagata Srimani, Giovanni Finocchio, Masoud Mohseni, Kerem Y. Camsari

Abstract: Recent demonstrations on specialized benchmarks have reignited excitement for quantum computers, yet whether they can deliver an advantage for practical real-world problems remains an open question. Here, we show that probabilistic computers (p-computers) when co-designed with hardware to implement powerful Monte Carlo algorithms can surpass state-of-the-art quantum annealers <a href="https://www.… ▽ More Recent demonstrations on specialized benchmarks have reignited excitement for quantum computers, yet whether they can deliver an advantage for practical real-world problems remains an open question. Here, we show that probabilistic computers (p-computers) when co-designed with hardware to implement powerful Monte Carlo algorithms can surpass state-of-the-art quantum annealers <a href="https://www.nature.com/articles/s41586-023-05867-2" target="_blank">[King et al., Nature (2023)]</a> in solving certain hard optimization problems. We focus on two key algorithms: discrete-time simulated quantum annealing (DT-SQA) and adaptive parallel tempering (APT), both applied to 3D spin glasses. For DT-SQA, we find that increasing the number of replicas improves residual energy scaling, while parallelizing fewer replicas across independent runs also achieves comparable scaling. Both strategies align with the theoretical expectations from extreme value theory. In addition, APT outperforms DT-SQA when supported by non-local isoenergetic cluster moves. Finite-size scaling analysis suggests a universal behavior that explains the superior performance of APT over both DT-SQA and quantum annealing. We show that these algorithms are readily implementable in modern hardware thanks to the mature semiconductor technology. Unlike software simulations, replicas can be monolithically housed on a single chip and a large number of spins can be updated in parallel and asynchronously, similar to a quantum annealer. We project that custom Field Programmable Gate Arrays (FPGA) or specialized chips leveraging massive parallelism can further accelerate these algorithms by orders of magnitude, while drastically improving energy efficiency. Our results raise the bar for a practical quantum advantage in optimization and present p-computers as scalable, energy-efficient hardware for real-world optimization problems. △ Less

Submitted 7 April, 2025; v1 submitted 13 March, 2025; originally announced March 2025.

Integrated probabilistic computer using voltage-controlled magnetic tunnel junctions as its entropy source

Authors: Christian Duffee, Jordan Athas, Yixin Shao, Noraica Davila Melendez, Eleonora Raimondo, Jordan A. Katine, Kerem Y. Camsari, Giovanni Finocchio, Pedram Khalili Amiri

Abstract: Probabilistic Ising machines (PIMs) provide a path to solving many computationally hard problems more efficiently than deterministic algorithms on von Neumann computers. Stochastic magnetic tunnel junctions (S-MTJs), which are engineered to be thermally unstable, show promise as entropy sources in PIMs. However, scaling up S-MTJ-PIMs is challenging, as it requires fine control of a small magnetic… ▽ More Probabilistic Ising machines (PIMs) provide a path to solving many computationally hard problems more efficiently than deterministic algorithms on von Neumann computers. Stochastic magnetic tunnel junctions (S-MTJs), which are engineered to be thermally unstable, show promise as entropy sources in PIMs. However, scaling up S-MTJ-PIMs is challenging, as it requires fine control of a small magnetic energy barrier across large numbers of devices. In addition, non-spintronic components of S-MTJ-PIMs to date have been primarily realized using general-purpose processors or field-programmable gate arrays. Reaching the ultimate performance of spintronic PIMs, however, requires co-designed application-specific integrated circuits (ASICs), combining CMOS with spintronic entropy sources. Here we demonstrate an ASIC in 130 nm foundry CMOS, which implements integer factorization as a representative hard optimization problem, using PIM-based invertible logic gates realized with 1143 probabilistic bits. The ASIC uses stochastic bit sequences read from an adjacent voltage-controlled (V-) MTJ chip. The V-MTJs are designed to be thermally stable in the absence of voltage, and generate random bits on-demand in response to 10 ns pulses using the voltage-controlled magnetic anisotropy effect. We experimentally demonstrate the chip's functionality and provide projections for designs in advanced nodes, illustrating a path to millions of probabilistic bits on a single CMOS+V-MTJ chip. △ Less

Submitted 10 December, 2024; originally announced December 2024.

How to Build a Quantum Supercomputer: Scaling from Hundreds to Millions of Qubits

Authors: Masoud Mohseni, Artur Scherer, K. Grace Johnson, Oded Wertheim, Matthew Otten, Navid Anjum Aadit, Yuri Alexeev, Kirk M. Bresniker, Kerem Y. Camsari, Barbara Chapman, Soumitra Chatterjee, Gebremedhin A. Dagnew, Aniello Esposito, Farah Fahim, Marco Fiorentino, Archit Gajjar, Abdullah Khalid, Xiangzhou Kong, Bohdan Kulchytskyy, Elica Kyoseva, Ruoyu Li, P. Aaron Lott, Igor L. Markov, Robert F. McDermott, Giacomo Pedretti , et al. (16 additional authors not shown)

Abstract: In the span of four decades, quantum computation has evolved from an intellectual curiosity to a potentially realizable technology. Today, small-scale demonstrations have become possible for quantum algorithmic primitives on hundreds of physical qubits and proof-of-principle error-correction on a single logical qubit. Nevertheless, despite significant progress and excitement, the path toward a ful… ▽ More In the span of four decades, quantum computation has evolved from an intellectual curiosity to a potentially realizable technology. Today, small-scale demonstrations have become possible for quantum algorithmic primitives on hundreds of physical qubits and proof-of-principle error-correction on a single logical qubit. Nevertheless, despite significant progress and excitement, the path toward a full-stack scalable technology is largely unknown. There are significant outstanding quantum hardware, fabrication, software architecture, and algorithmic challenges that are either unresolved or overlooked. These issues could seriously undermine the arrival of utility-scale quantum computers for the foreseeable future. Here, we provide a comprehensive review of these scaling challenges. We show how the road to scaling could be paved by adopting existing semiconductor technology to build much higher-quality qubits, employing system engineering approaches, and performing distributed quantum computation within heterogeneous high-performance computing infrastructures. These opportunities for research and development could unlock certain promising applications, in particular, efficient quantum simulation/learning of quantum data generated by natural or engineered quantum systems. To estimate the true cost of such promises, we provide a detailed resource and sensitivity analysis for classically hard quantum chemistry calculations on surface-code error-corrected quantum computers given current, target, and desired hardware specifications based on superconducting qubits, accounting for a realistic distribution of errors. Furthermore, we argue that, to tackle industry-scale classical optimization and machine learning problems in a cost-effective manner, heterogeneous quantum-probabilistic computing with custom-designed accelerators should be considered as a complementary path toward scalability. △ Less

Submitted 31 January, 2025; v1 submitted 15 November, 2024; originally announced November 2024.

Comments: 76 pages, 46 figures. General revision, added figures, added references, added appendices

Noise-augmented Chaotic Ising Machines for Combinatorial Optimization and Sampling

Authors: Kyle Lee, Shuvro Chowdhury, Kerem Y. Camsari

Abstract: Ising machines, hardware accelerators for combinatorial optimization and probabilistic sampling problems, have gained significant interest recently. A key element is stochasticity, which enables a wide exploration of configurations, thereby helping avoid local minima. Here, we refine the previously proposed concept of coupled chaotic bits (c-bits) that operate without explicit stochasticity. We sh… ▽ More Ising machines, hardware accelerators for combinatorial optimization and probabilistic sampling problems, have gained significant interest recently. A key element is stochasticity, which enables a wide exploration of configurations, thereby helping avoid local minima. Here, we refine the previously proposed concept of coupled chaotic bits (c-bits) that operate without explicit stochasticity. We show that augmenting chaotic bits with stochasticity enhances performance in combinatorial optimization, achieving algorithmic scaling comparable to probabilistic bits (p-bits). We first demonstrate that c-bits follow the quantum Boltzmann law in a 1D transverse field Ising model. We then show that c-bits exhibit critical dynamics similar to stochastic p-bits in 2D Ising and 3D spin glass models, with promising potential to solve challenging optimization problems. Finally, we propose a noise-augmented version of coupled c-bits via the adaptive parallel tempering algorithm (APT). Our noise-augmented c-bit algorithm outperforms fully deterministic c-bits running versions of the simulated annealing algorithm. Other analog Ising machines with coupled oscillators could draw inspiration from the proposed algorithm. Running replicas at constant temperature eliminates the need for global modulation of coupling strengths. Mixing stochasticity with deterministic c-bits creates a powerful hybrid computing scheme that can bring benefits in scaled, asynchronous, and massively parallel hardware implementations. △ Less

Submitted 29 October, 2024; v1 submitted 8 August, 2024; originally announced August 2024.

Journal ref: Communications Physics (2025)

Voltage-insensitive stochastic magnetic tunnel junctions with double free layers

Authors: Rikuto Ota, Keito Kobayashi, Keisuke Hayakawa, Shun Kanai, Kerem Y. Çamsarı, Hideo Ohno, Shunsuke Fukami

Abstract: Stochastic magnetic tunnel junctions (s-MTJ) is a promising component of probabilistic bit (p-bit), which plays a pivotal role in probabilistic computers. For a standard cell structure of the p-bit, s-MTJ is desired to be insensitive to voltage across the junction over several hundred millivolts. In conventional s-MTJs with a reference layer having a fixed magnetization direction, however, the sto… ▽ More Stochastic magnetic tunnel junctions (s-MTJ) is a promising component of probabilistic bit (p-bit), which plays a pivotal role in probabilistic computers. For a standard cell structure of the p-bit, s-MTJ is desired to be insensitive to voltage across the junction over several hundred millivolts. In conventional s-MTJs with a reference layer having a fixed magnetization direction, however, the stochastic output significantly varies with the voltage due to spin-transfer torque (STT) acting on the stochastic free layer. In this work, we study a s-MTJ with a "double-free-layer" design theoretically proposed earlier, in which the fixed reference layer of the conventional structure is replaced by another stochastic free layer, effectively mitigating the influence of STT on the stochastic output. We show that the key device property characterized by the ratio of relaxation times between the high- and low-resistance states is one to two orders of magnitude less sensitive to bias voltage variations compared to conventional s-MTJs when the top and bottom free layers are designed to possess the same effective thickness. This work opens a pathway for reliable, nanosecond-operation, high-output, and scalable spintronics-based p-bits. △ Less

Submitted 31 May, 2024; originally announced May 2024.

Journal ref: Appl. Phys. Lett. 125, 022406 (2024)

Connecting physics to systems with modular spin-circuits

Authors: Kemal Selcuk, Saleh Bunaiyan, Nihal Sanjay Singh, Shehrin Sayed, Samiran Ganguly, Giovanni Finocchio, Supriyo Datta, Kerem Y. Camsari

Abstract: An emerging paradigm in modern electronics is that of CMOS + $\sf X$ requiring the integration of standard CMOS technology with novel materials and technologies denoted by $\sf X$. In this context, a crucial challenge is to develop accurate circuit models for $\sf X$ that are compatible with standard models for CMOS-based circuits and systems. In this perspective, we present physics-based, experim… ▽ More An emerging paradigm in modern electronics is that of CMOS + $\sf X$ requiring the integration of standard CMOS technology with novel materials and technologies denoted by $\sf X$. In this context, a crucial challenge is to develop accurate circuit models for $\sf X$ that are compatible with standard models for CMOS-based circuits and systems. In this perspective, we present physics-based, experimentally benchmarked modular circuit models that can be used to evaluate a class of CMOS + $\sf X$ systems, where $\sf X$ denotes magnetic and spintronic materials and phenomena. This class of materials is particularly challenging because they go beyond conventional charge-based phenomena and involve the spin degree of freedom which involves non-trivial quantum effects. Starting from density matrices $-$ the central quantity in quantum transport $-$ using well-defined approximations, it is possible to obtain spin-circuits that generalize ordinary circuit theory to 4-component currents and voltages (1 for charge and 3 for spin). With step-by-step examples that progressively become more complex, we illustrate how the spin-circuit approach can be used to start from the physics of magnetism and spintronics to enable accurate system-level evaluations. We believe the core approach can be extended to include other quantum degrees of freedom like valley and pseudospins starting from corresponding density matrices. △ Less

Submitted 10 September, 2024; v1 submitted 30 April, 2024; originally announced April 2024.

Journal ref: NPJ Spintronics (2024)

Heisenberg machines with programmable spin-circuits

Authors: Saleh Bunaiyan, Supriyo Datta, Kerem Y. Camsari

Abstract: We show that we can harness two recent experimental developments to build a compact hardware emulator for the classical Heisenberg model in statistical physics. The first is the demonstration of spin-diffusion lengths in excess of microns in graphene even at room temperature. The second is the demonstration of low barrier magnets (LBMs) whose magnetization can fluctuate rapidly even at sub-nanosec… ▽ More We show that we can harness two recent experimental developments to build a compact hardware emulator for the classical Heisenberg model in statistical physics. The first is the demonstration of spin-diffusion lengths in excess of microns in graphene even at room temperature. The second is the demonstration of low barrier magnets (LBMs) whose magnetization can fluctuate rapidly even at sub-nanosecond rates. Using experimentally benchmarked circuit models, we show that an array of LBMs driven by an external current source has a steady-state distribution corresponding to a classical system with an energy function of the form $E = -1/2\sum_{i,j} J_{ij} (\hat{m}_i \cdot \hat{m}_j$). This may seem surprising for a non-equilibrium system but we show that it can be justified by a Lyapunov function corresponding to a system of coupled Landau-Lifshitz-Gilbert (LLG) equations. The Lyapunov function we construct describes LBMs interacting through the spin currents they inject into the spin neutral substrate. We suggest ways to tune the coupling coefficients $J_{ij}$ so that it can be used as a hardware solver for optimization problems involving continuous variables represented by vector magnetizations, similar to the role of the Ising model in solving optimization problems with binary variables. Finally, we train a Heisenberg XOR gate based on a network of four coupled stochastic LLG equations, illustrating the concept of probabilistic computing with a programmable Heisenberg model. △ Less

Submitted 3 June, 2024; v1 submitted 3 December, 2023; originally announced December 2023.

Journal ref: Physical Review Applied, 22, 014014 (2024)

Double-Free-Layer Stochastic Magnetic Tunnel Junctions with Synthetic Antiferromagnets

Authors: Kemal Selcuk, Shun Kanai, Rikuto Ota, Hideo Ohno, Shunsuke Fukami, Kerem Y. Camsari

Abstract: Stochastic magnetic tunnel junctions (sMTJ) using low-barrier nanomagnets have shown promise as fast, energy-efficient, and scalable building blocks for probabilistic computing. Despite recent experimental and theoretical progress, sMTJs exhibiting the ideal characteristics necessary for probabilistic bits (p-bit) are still lacking. Ideally, the sMTJs should have (a) voltage bias independence prev… ▽ More Stochastic magnetic tunnel junctions (sMTJ) using low-barrier nanomagnets have shown promise as fast, energy-efficient, and scalable building blocks for probabilistic computing. Despite recent experimental and theoretical progress, sMTJs exhibiting the ideal characteristics necessary for probabilistic bits (p-bit) are still lacking. Ideally, the sMTJs should have (a) voltage bias independence preventing read disturbance (b) uniform randomness in the magnetization angle between the free layers, and (c) fast fluctuations without requiring external magnetic fields while being robust to magnetic field perturbations. Here, we propose a new design satisfying all of these requirements, using double-free-layer sMTJs with synthetic antiferromagnets (SAF). We evaluate the proposed sMTJ design with experimentally benchmarked spin-circuit models accounting for transport physics, coupled with the stochastic Landau-Lifshitz-Gilbert equation for magnetization dynamics. We find that the use of low-barrier SAF layers reduces dipolar coupling, achieving uncorrelated fluctuations at zero-magnetic field surviving up to diameters exceeding ($D\approx 100$ nm) if the nanomagnets can be made thin enough ($\approx 1$-$2$ nm). The double-free-layer structure retains bias-independence and the circular nature of the nanomagnets provides near-uniform randomness with fast fluctuations. Combining our full sMTJ model with advanced transistor models, we estimate the energy to generate a random bit as $\approx$ 3.6 fJ, with fluctuation rates of $\approx$ 3.3 GHz per p-bit. Our results will guide the experimental development of superior stochastic magnetic tunnel junctions for large-scale and energy-efficient probabilistic computation for problems relevant to machine learning and artificial intelligence. △ Less

Submitted 30 March, 2024; v1 submitted 11 November, 2023; originally announced November 2023.

Journal ref: Phys. Rev. Applied 21, 054002 (2024)

CMOS + stochastic nanomagnets: heterogeneous computers for probabilistic inference and learning

Authors: Nihal Sanjay Singh, Keito Kobayashi, Qixuan Cao, Kemal Selcuk, Tianrui Hu, Shaila Niazi, Navid Anjum Aadit, Shun Kanai, Hideo Ohno, Shunsuke Fukami, Kerem Y. Camsari

Abstract: Extending Moore's law by augmenting complementary-metal-oxide semiconductor (CMOS) transistors with emerging nanotechnologies (X) has become increasingly important. One important class of problems involve sampling-based Monte Carlo algorithms used in probabilistic machine learning, optimization, and quantum simulation. Here, we combine stochastic magnetic tunnel junction (sMTJ)-based probabilistic… ▽ More Extending Moore's law by augmenting complementary-metal-oxide semiconductor (CMOS) transistors with emerging nanotechnologies (X) has become increasingly important. One important class of problems involve sampling-based Monte Carlo algorithms used in probabilistic machine learning, optimization, and quantum simulation. Here, we combine stochastic magnetic tunnel junction (sMTJ)-based probabilistic bits (p-bits) with Field Programmable Gate Arrays (FPGA) to create an energy-efficient CMOS + X (X = sMTJ) prototype. This setup shows how asynchronously driven CMOS circuits controlled by sMTJs can perform probabilistic inference and learning by leveraging the algorithmic update-order-invariance of Gibbs sampling. We show how the stochasticity of sMTJs can augment low-quality random number generators (RNG). Detailed transistor-level comparisons reveal that sMTJ-based p-bits can replace up to 10,000 CMOS transistors while dissipating two orders of magnitude less energy. Integrated versions of our approach can advance probabilistic computing involving deep Boltzmann machines and other energy-based learning algorithms with extremely high throughput and energy efficiency. △ Less

Submitted 23 February, 2024; v1 submitted 12 April, 2023; originally announced April 2023.

Journal ref: Nature Communications volume 15, Article number: 2685 (2024)

Evaluating spintronics-compatible implementations of Ising machines

Authors: Andrea Grimaldi, Luciano Mazza, Eleonora Raimondo, Pietro Tullo, Davi Rodrigues, Kerem Y. Camsari, Vincenza Crupi, Mario Carpentieri, Vito Puliafito, Giovanni Finocchio

Abstract: The commercial and industrial demand for the solution of hard combinatorial optimization problems push forward the development of efficient solvers. One of them is the Ising machine which can solve combinatorial problems mapped to Ising Hamiltonians. In particular, spintronic hardware implementations of Ising machines can be very efficient in terms of area and performance, and are relatively low-c… ▽ More The commercial and industrial demand for the solution of hard combinatorial optimization problems push forward the development of efficient solvers. One of them is the Ising machine which can solve combinatorial problems mapped to Ising Hamiltonians. In particular, spintronic hardware implementations of Ising machines can be very efficient in terms of area and performance, and are relatively low-cost considering the potential to create hybrid CMOS-spintronic technology. Here, we perform a comparison of coherent and probabilistic paradigms of Ising machines on several hard Max-Cut instances, analyzing their scalability and performance at software level. We show that probabilistic Ising machines outperform coherent Ising machines in terms of the number of iterations required to achieve the problem s solution. Nevertheless, high frequency spintronic oscillators with sub-nanosecond synchronization times could be very promising as ultrafast Ising machines. In addition, considering that a coherent Ising machine acts better for Max-Cut problems because of the absence of the linear term in the Ising Hamiltonian, we introduce a procedure to encode Max-3SAT to Max-Cut. We foresee potential synergic interplays between the two paradigms. △ Less

Submitted 9 April, 2023; originally announced April 2023.

Comments: 26 pages, 6 Figures, submitted for publication in Phys. Rev. Applied (it will be presented at intermag 2023 in Japan)

Journal ref: Phys. Rev. Applied 20, 024005 (2023)

CMOS-compatible Ising and Potts Annealing Using Single Photon Avalanche Diodes

Authors: William Whitehead, Zachary Nelson, Kerem Y. Camsari, Luke Theogarajan

Abstract: Massively parallel annealing processors may offer superior performance for a wide range of sampling and optimization problems. A key component dictating the size of these processors is the neuron update circuit, ideally implemented using special stochastic nanodevices. We leverage photon statistics using single photon avalanche diodes (SPADs) and temporal filtering to generate stochastic states. T… ▽ More Massively parallel annealing processors may offer superior performance for a wide range of sampling and optimization problems. A key component dictating the size of these processors is the neuron update circuit, ideally implemented using special stochastic nanodevices. We leverage photon statistics using single photon avalanche diodes (SPADs) and temporal filtering to generate stochastic states. This method is a powerful alternative offering unique features not currently seen in annealing processors: the ability to continuously control the computational temperature and the seamless extension to the Potts model, a $n$-state generalization of the two-state Ising model. SPADs also offer a considerable practical advantage since they are readily manufacturable in current standard CMOS processes. As a first step towards realizing a CMOS SPAD-based annealer, we have designed Ising and Potts models driven by an array of discrete SPADs and show they accurately sample from their theoretical distributions. △ Less

Submitted 22 November, 2022; originally announced November 2022.

Journal ref: Nature Electronics (2023)

Efficient Probabilistic Computing with Stochastic Perovskite Nickelates

Authors: Tae Joon Park, Kemal Selcuk, Hai-Tian Zhang, Sukriti Manna, Rohit Batra, Qi Wang, Haoming Yu, Subramanian K. R. S. Sankaranarayanan, Hua Zhou, Kerem Y. Camsari, Shriram Ramanathan

Abstract: Probabilistic computing has emerged as a viable approach to solve hard optimization problems. Devices with inherent stochasticity can greatly simplify their implementation in electronic hardware. Here, we demonstrate intrinsic stochastic resistance switching controlled via electric fields in perovskite nickelates doped with hydrogen. The ability of hydrogen ions to reside in various metastable con… ▽ More Probabilistic computing has emerged as a viable approach to solve hard optimization problems. Devices with inherent stochasticity can greatly simplify their implementation in electronic hardware. Here, we demonstrate intrinsic stochastic resistance switching controlled via electric fields in perovskite nickelates doped with hydrogen. The ability of hydrogen ions to reside in various metastable configurations in the lattice leads to a distribution of transport gaps. With experimentally characterized p-bits, a shared-synapse p-bit architecture demonstrates highly-parallelized and energy-efficient solutions to optimization problems such as integer factorization and Boolean-satisfiability. The results introduce perovskite nickelates as scalable potential candidates for probabilistic computing and showcase the potential of light-element dopants in next-generation correlated semiconductors. △ Less

Submitted 30 August, 2022; originally announced August 2022.

Journal ref: Nano Letters (2022)

Spintronics-compatible approach to solving maximum satisfiability problems with probabilistic computing, invertible logic and parallel tempering

Authors: Andrea Grimaldi, Luis Sánchez-Tejerina1, Navid Anjum Aadit, Stefano Chiappini, Mario Carpentieri, Kerem Camsari, Giovanni Finocchio

Abstract: The search of hardware-compatible strategies for solving NP-hard combinatorial optimization problems (COPs) is an important challenge of today s computing research because of their wide range of applications in real world optimization problems. Here, we introduce an unconventional scalable approach to face maximum satisfiability problems (Max-SAT) which combines probabilistic computing with p-bits… ▽ More The search of hardware-compatible strategies for solving NP-hard combinatorial optimization problems (COPs) is an important challenge of today s computing research because of their wide range of applications in real world optimization problems. Here, we introduce an unconventional scalable approach to face maximum satisfiability problems (Max-SAT) which combines probabilistic computing with p-bits, parallel tempering, and the concept of invertible logic gates. We theoretically show the spintronic implementation of this approach based on a coupled set of Landau-Lifshitz-Gilbert equations, showing a potential path for energy efficient and very fast (p-bits exhibiting ns time scale switching) architecture for the solution of COPs. The algorithm is benchmarked with hard Max-SAT instances from the 2016 Max-SAT competition (e.g., HG-4SAT-V150-C1350-1.cnf which can be described with 2851 p-bits), including weighted Max-SAT and Max-Cut problems. △ Less

Submitted 30 January, 2022; originally announced January 2022.

Comments: 7 Figures, 20 pages

Journal ref: Phys. Rev. Applied 17, 024052 (2022)

Proposal for a solid-state magnetoresistive Larmor quantum clock

Authors: Amal Mathew, Kerem Y Camsari, Bhaskaran Muralidharan

Abstract: We propose a solid-state implementation of the Larmor clock that exploits tunnel magnetoresistance to distill information on how long itinerant spins take to traverse a barrier embedded in it. Keeping in mind that the tunnelling time innately involves pristine pre-selection and post-selection, our proposal takes into account the detrimental aspects of multiple reflections by incorporating multiple… ▽ More We propose a solid-state implementation of the Larmor clock that exploits tunnel magnetoresistance to distill information on how long itinerant spins take to traverse a barrier embedded in it. Keeping in mind that the tunnelling time innately involves pristine pre-selection and post-selection, our proposal takes into account the detrimental aspects of multiple reflections by incorporating multiple contacts, multiple current measurements and suitably defined magnetoresistance signals. Our analysis provides a direct mapping between the magnetoresistance signals and the tunneling times and aligns well with the interpretation in terms of generalized quantum measurements and quantum weak values. By means of an engineered pre-selection in one of the ferromagnetic contacts, we also elucidate how one can make the measurement "weak" by minimizing the back-action, while keeping the tunneling time unchanged. We then analyze the resulting interpretations of the tunneling time and the measurement back action in the presence of phase breaking effects that are intrinsic to solid state systems. We unravel that while the time-keeping aspect of the Larmor clock is reasonably undeterred due to momentum and phase relaxation processes, it degrades significantly in the presence of spin-dephasing. We believe that the ideas presented here also open up a fructuous solid state platform to encompass emerging ideas in quantum technology such as quantum weak values and its applications, that are currently exclusive to quantum optics and cold atoms. △ Less

Submitted 3 December, 2021; originally announced December 2021.

Comments: 8 pages, 6 figures, supplementary material included, comments welcome

Journal ref: Physical Review B, 105, 144418 (2022)

Physics-Based Models for Magneto-Electric Spin-Orbit Logic Circuits

Authors: Hai Li, Dmitri E. Nikonov, Chia-Ching Lin, Kerem Camsari, Yu-Ching Liao, Chia-Sheng Hsu, Azad Naeemi, Ian A. Young

Abstract: Spintronic devices are a promising beyond-CMOS device option thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multi-physics dynamics, a rigorous treatment of both spin and charge and their inter-conversion is required. Here we present physics-based device models based on 4x4 matrices for the spin-orbit coupling part of the magneto-electric spin-orbit (MESO… ▽ More Spintronic devices are a promising beyond-CMOS device option thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multi-physics dynamics, a rigorous treatment of both spin and charge and their inter-conversion is required. Here we present physics-based device models based on 4x4 matrices for the spin-orbit coupling part of the magneto-electric spin-orbit (MESO) device. Also, a more rigorous physics model of ferroelectric and magnetoelectric switching of ferromagnets, based on Landau-Lifshitz-Gilbert (LLG) and Landau-Khalatnikov (LK) equations, is presented. With the combined model implemented in a SPICE circuit simulator environment, simulation results were obtained which show feasibility of MESO implementation and functional operation of buffers, oscillators, and majority gates. △ Less

Submitted 21 October, 2021; originally announced October 2021.

Comments: 11 pages, 21 figures

Journal ref: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (2022)

Massively Parallel Probabilistic Computing with Sparse Ising Machines

Authors: Navid Anjum Aadit, Andrea Grimaldi, Mario Carpentieri, Luke Theogarajan, John M. Martinis, Giovanni Finocchio, Kerem Y. Camsari

Abstract: Inspired by the developments in quantum computing, building domain-specific classical hardware to solve computationally hard problems has received increasing attention. Here, by introducing systematic sparsification techniques, we demonstrate a massively parallel architecture: the sparse Ising Machine (sIM). Exploiting sparsity, sIM achieves ideal parallelism: its key figure of merit - flips per s… ▽ More Inspired by the developments in quantum computing, building domain-specific classical hardware to solve computationally hard problems has received increasing attention. Here, by introducing systematic sparsification techniques, we demonstrate a massively parallel architecture: the sparse Ising Machine (sIM). Exploiting sparsity, sIM achieves ideal parallelism: its key figure of merit - flips per second - scales linearly with the number of probabilistic bits (p-bit) in the system. This makes sIM up to 6 orders of magnitude faster than a CPU implementing standard Gibbs sampling. Compared to optimized implementations in TPUs and GPUs, sIM delivers 5-18x speedup in sampling. In benchmark problems such as integer factorization, sIM can reliably factor semiprimes up to 32-bits, far larger than previous attempts from D-Wave and other probabilistic solvers. Strikingly, sIM beats competition-winning SAT solvers (by 4-700x in runtime to reach 95% accuracy) in solving 3SAT problems. Even when sampling is made inexact using faster clocks, sIM can find the correct ground state with further speedup. The problem encoding and sparsification techniques we introduce can be applied to other Ising Machines (classical and quantum) and the architecture we present can be used for scaling the demonstrated 5,000-10,000 p-bits to 1,000,000 or more through analog CMOS or nanodevices. △ Less

Submitted 21 February, 2022; v1 submitted 5 October, 2021; originally announced October 2021.

Journal ref: Nature Electronics (2022)

Hardware-aware $in \ situ$ Boltzmann machine learning using stochastic magnetic tunnel junctions

Authors: Jan Kaiser, William A. Borders, Kerem Y. Camsari, Shunsuke Fukami, Hideo Ohno, Supriyo Datta

Abstract: One of the big challenges of current electronics is the design and implementation of hardware neural networks that perform fast and energy-efficient machine learning. Spintronics is a promising catalyst for this field with the capabilities of nanosecond operation and compatibility with existing microelectronics. Considering large-scale, viable neuromorphic systems however, variability of device pr… ▽ More One of the big challenges of current electronics is the design and implementation of hardware neural networks that perform fast and energy-efficient machine learning. Spintronics is a promising catalyst for this field with the capabilities of nanosecond operation and compatibility with existing microelectronics. Considering large-scale, viable neuromorphic systems however, variability of device properties is a serious concern. In this paper, we show an autonomously operating circuit that performs hardware-aware machine learning utilizing probabilistic neurons built with stochastic magnetic tunnel junctions. We show that $in \ situ$ learning of weights and biases in a Boltzmann machine can counter device-to-device variations and learn the probability distribution of meaningful operations such as a full adder. This scalable autonomously operating learning circuit using spintronics-based neurons could be especially of interest for standalone artificial-intelligence devices capable of fast and efficient learning at the edge. △ Less

Submitted 13 January, 2022; v1 submitted 9 February, 2021; originally announced February 2021.

Journal ref: Phys. Rev. Applied 17, 014016 (2022)

Quantitative Evaluation of Hardware Binary Stochastic Neurons

Authors: Orchi Hassan, Supriyo Datta, Kerem Y. Camsari

Abstract: Recently there has been increasing activity to build dedicated Ising Machines to accelerate the solution of combinatorial optimization problems by expressing these problems as a ground-state search of the Ising model. A common theme of such Ising Machines is to tailor the physics of underlying hardware to the mathematics of the Ising model to improve some aspect of performance that is measured in… ▽ More Recently there has been increasing activity to build dedicated Ising Machines to accelerate the solution of combinatorial optimization problems by expressing these problems as a ground-state search of the Ising model. A common theme of such Ising Machines is to tailor the physics of underlying hardware to the mathematics of the Ising model to improve some aspect of performance that is measured in speed to solution, energy consumption per solution or area footprint of the adopted hardware. One such approach to build an Ising spin, or a binary stochastic neuron (BSN), is a compact mixed-signal unit based on a low-barrier nanomagnet based design that uses a single magnetic tunnel junction (MTJ) and three transistors (3T-1MTJ) where the MTJ functions as a stochastic resistor (1SR). Such a compact unit can drastically reduce the area footprint of BSNs while promising massive scalability by leveraging the existing Magnetic RAM (MRAM) technology that has integrated 1T-1MTJ cells in ~Gbit densities. The 3T-1SR design however can be realized using different materials or devices that provide naturally fluctuating resistances. Extending previous work, we evaluate hardware BSNs from this general perspective by classifying necessary and sufficient conditions to design a fast and energy-efficient BSN that can be used in scaled Ising Machine implementations. We connect our device analysis to systems-level metrics by emphasizing hardware-independent figures-of-merit such as flips per second and dissipated energy per random bit that can be used to classify any Ising Machine. △ Less

Submitted 18 June, 2021; v1 submitted 31 December, 2020; originally announced January 2021.

Journal ref: Phys. Rev. Applied 15, 064046 (2021)

Double Free-Layer Magnetic Tunnel Junctions for Probabilistic Bits

Authors: Kerem Y. Camsari, Mustafa Mert Torunbalci, William A. Borders, Hideo Ohno, Shunsuke Fukami

Abstract: Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free layer of a magnetic tunnel junction (MTJ) whose magnetic fluctuations are converted to resistance fluctuations in the presence of a stable fixed layer. Here, we pr… ▽ More Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free layer of a magnetic tunnel junction (MTJ) whose magnetic fluctuations are converted to resistance fluctuations in the presence of a stable fixed layer. Here, we propose and theoretically analyze a magnetic tunnel junction with no fixed layers but two free layers that are circularly shaped disk magnets. We use an experimentally benchmarked model that accounts for finite temperature magnetization dynamics, bias-dependent charge and spin-polarized currents as well as the dipolar coupling between the free layers. We obtain analytical results for statistical averages of fluctuations that are in good agreement with the numerical model. We find that the free layers with low diameters fluctuate to randomize the resistance of the MTJ in an approximately bias-independent manner. We show how such MTJs can be used to build a binary stochastic neuron (or a p-bit) in hardware. Unlike earlier stochastic MTJs that need to operate at a specific bias point to produce random fluctuations, the proposed design can be random for a wide range of bias values, independent of spin-transfer-torque pinning. Moreover, in the absence of a carefully optimized stabled fixed layer, the symmetric double-free layer stack can be manufactured using present day Magnetoresistive Random Access Memory (MRAM) technology by minimal changes to the fabrication process. Such devices can be used as hardware accelerators in energy-efficient computing schemes that require a large throughput of tunably random bits. △ Less

Submitted 3 March, 2021; v1 submitted 12 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. Applied 15, 044049 (2021)

The Non-Equilibrium Green Function (NEGF) Method

Authors: Kerem Y. Camsari, Shuvro Chowdhury, Supriyo Datta

Abstract: The Non-Equilibrium Green Function (NEGF) method was established in the 1960's through the classic work of Schwinger, Kadanoff, Baym, Keldysh and others using many-body perturbation theory (MBPT) and the diagrammatic theory for non-equilibrium processes. Much of the literature is based on the original MBPT-based approach and this makes it inaccessible to those unfamiliar with advanced quantum stat… ▽ More The Non-Equilibrium Green Function (NEGF) method was established in the 1960's through the classic work of Schwinger, Kadanoff, Baym, Keldysh and others using many-body perturbation theory (MBPT) and the diagrammatic theory for non-equilibrium processes. Much of the literature is based on the original MBPT-based approach and this makes it inaccessible to those unfamiliar with advanced quantum statistical mechanics. We obtain the NEGF equations directly from a one-electron Schrödinger equation using relatively elementary arguments. These equations have been used to discuss many problems of great interest such as quantized conductance, (integer) quantum Hall effect, Anderson localization, resonant tunneling and spin transport without a systematic treatment of many-body effects. But it goes beyond purely coherent transport allowing us to include phase-breaking interactions (both momentum-relaxing and momentum-conserving as well as spin-conserving and spin-relaxing) within a self-consistent Born approximation. We believe that the scope and utility of the NEGF equations transcend the MBPT-based approach originally used to derive it. NEGF teaches us how to combine quantum dynamics with "contacts" much as Boltzmann taught us how to combine classical dynamics with "contacts", using the word contacts in a broad, figurative sense to denote all kinds of entropy-driven processes. We believe that this approach to "contact-ing" the Schrödinger equation should be of broad interest to anyone working on device physics or non-equilibrium statistical mechanics in general. △ Less

Submitted 13 January, 2021; v1 submitted 3 August, 2020; originally announced August 2020.

Comments: To appear in Springer Handbook of Semiconductor Devices (2021)

Journal ref: Springer Handbook of Semiconductor Devices pp 1583-1599 (2023)

Emulating Quantum Interference with Generalized Ising Machines

Authors: Shuvro Chowdhury, Kerem Y. Camsari, Supriyo Datta

Abstract: The primary objective of this paper is to present an exact and general procedure for mapping any sequence of quantum gates onto a network of probabilistic p-bits which can take on one of two values 0 and 1. The first $n$ p-bits represent the input qubits, while the other p-bits represent the qubits after the application of successive gating operations. We can view this structure as a Boltzmann mac… ▽ More The primary objective of this paper is to present an exact and general procedure for mapping any sequence of quantum gates onto a network of probabilistic p-bits which can take on one of two values 0 and 1. The first $n$ p-bits represent the input qubits, while the other p-bits represent the qubits after the application of successive gating operations. We can view this structure as a Boltzmann machine whose states each represent a Feynman path leading from an initial configuration of qubits to a final configuration. Each such path has a complex amplitude $ψ$ which can be associated with a complex energy. The real part of this energy can be used to generate samples of Feynman paths in the usual way, while the imaginary part is accounted for by treating the samples as complex entities, unlike ordinary Boltzmann machines where samples are positive. Quantum gates often have purely imaginary energy functions for which all configurations have the same probability and one cannot take advantage of sampling techniques. However, if we can use suitable transformations to introduce a real part in the energy function then powerful sampling algorithms like Gibbs sampling can be harnessed to get acceptable results with far fewer samples and perhaps even escape the exponential scaling with $nd$. This algorithmic acceleration can then be supplemented with special-purpose hardware accelerators like Ising Machines which can obtain a very large number of samples per second through a combination of massive parallelism, pipelining, and clockless mixed-signal operation made possible by codesigning circuits and architectures to match the algorithm. Our results for mapping an arbitrary quantum circuit to a Boltzmann machine with a complex energy function should help push the boundaries of the simulability of quantum circuits with probabilistic resources and compare them with NISQ-era quantum computers. △ Less

Submitted 21 October, 2023; v1 submitted 14 July, 2020; originally announced July 2020.

Spintronics for neuromorphic computing

Authors: J. Grollier, D. Querlioz, K. Y. Camsari, K. Everschor-Sitte, S. Fukami, M. D. Stiles

Abstract: Neuromorphic computing uses brain-inspired principles to design circuits that can perform computational tasks with superior power efficiency to conventional computers. Approaches that use traditional electronic devices to create artificial neurons and synapses are, however, currently limited by the energy and area requirements of these components. Spintronic nanodevices, which exploit both the mag… ▽ More Neuromorphic computing uses brain-inspired principles to design circuits that can perform computational tasks with superior power efficiency to conventional computers. Approaches that use traditional electronic devices to create artificial neurons and synapses are, however, currently limited by the energy and area requirements of these components. Spintronic nanodevices, which exploit both the magnetic and electrical properties of electrons, can increase the energy efficiency and decrease the area of these circuits, and magnetic tunnel junctions are of particular interest as neuromorphic computing elements because they are compatible with standard integrated circuits and can support multiple functionalities. Here we review the development of spintronic devices for neuromorphic computing. We examine how magnetic tunnel junctions can serve as synapses and neurons, and how magnetic textures, such as domain walls and skyrmions, can function as neurons. We also explore spintronics-based implementations of neuromorphic computing tasks, such as pattern recognition in an associative memory, and discuss the challenges that exist in scaling up these systems. △ Less

Submitted 12 July, 2020; originally announced July 2020.

The promise of spintronics for unconventional computing

Authors: Giovanni Finocchio, Massimiliano Di Ventra, Kerem Y. Camsari, Karin Everschor-Sitte, Pedram Khalili Amiri, Zhongming Zeng

Abstract: Novel computational paradigms may provide the blueprint to help solving the time and energy limitations that we face with our modern computers, and provide solutions to complex problems more efficiently (with reduced time, power consumption and/or less device footprint) than is currently possible with standard approaches. Spintronics offers a promising basis for the development of efficient device… ▽ More Novel computational paradigms may provide the blueprint to help solving the time and energy limitations that we face with our modern computers, and provide solutions to complex problems more efficiently (with reduced time, power consumption and/or less device footprint) than is currently possible with standard approaches. Spintronics offers a promising basis for the development of efficient devices and unconventional operations for at least three main reasons: (i) the low-power requirements of spin-based devices, i.e., requiring no standby power for operation and the possibility to write information with small dynamic energy dissipation, (ii) the strong nonlinearity, time nonlocality, and/or stochasticity that spintronic devices can exhibit, and (iii) their compatibility with CMOS logic manufacturing processes. At the same time, the high endurance and speed of spintronic devices means that they can be rewritten or reconfigured frequently over the lifetime of a circuit, a feature that is essential in many emerging computing concepts. In this perspective, we will discuss how spintronics may aid in the realization of efficient devices primarily based on magnetic tunnel junctions and how those devices can impact in the development of three unconventional computing paradigms, namely, reservoir computing, probabilistic computing and memcomputing that in our opinion may be used to address some limitations of modern computers, providing a realistic path to intelligent hybrid CMOS-spintronic systems. △ Less

Submitted 16 October, 2019; originally announced October 2019.

Comments: 18 pages and 4 figures

Journal ref: Journal of Magnetism and Magnetic Materials, Volume 521, Part 1, 1 March 2021, 167506

Probabilistic Circuits for Autonomous Learning: A simulation study

Authors: Jan Kaiser, Rafatul Faria, Kerem Y. Camsari, Supriyo Datta

Abstract: Modern machine learning is based on powerful algorithms running on digital computing platforms and there is great interest in accelerating the learning process and making it more energy efficient. In this paper we present a fully autonomous probabilistic circuit for fast and efficient learning that makes no use of digital computing. Specifically we use SPICE simulations to demonstrate a clockless… ▽ More Modern machine learning is based on powerful algorithms running on digital computing platforms and there is great interest in accelerating the learning process and making it more energy efficient. In this paper we present a fully autonomous probabilistic circuit for fast and efficient learning that makes no use of digital computing. Specifically we use SPICE simulations to demonstrate a clockless autonomous circuit where the required synaptic weights are read out in the form of analog voltages. Such autonomous circuits could be particularly of interest as standalone learning devices in the context of mobile and edge computing. △ Less

Submitted 25 February, 2020; v1 submitted 14 October, 2019; originally announced October 2019.

Journal ref: Frontiers in Computational Neuroscience 14, 2020

Correlated fluctuations in spin orbit torque-coupled perpendicular nanomagnets

Authors: Punyashloka Debashis, Rafatul Faria, Kerem Y. Camsari, Supriyo Datta, Zhihong Chen

Abstract: Low barrier nanomagnets have attracted a lot of research interest for their use as sources of high quality true random number generation. More recently, low barrier nanomagnets with tunable output have been shown to be a natural hardware platform for unconventional computing paradigms such as probabilistic spin logic. Efficient generation and tunability of high quality random bits is critical for… ▽ More Low barrier nanomagnets have attracted a lot of research interest for their use as sources of high quality true random number generation. More recently, low barrier nanomagnets with tunable output have been shown to be a natural hardware platform for unconventional computing paradigms such as probabilistic spin logic. Efficient generation and tunability of high quality random bits is critical for these novel applications. However, current spintronic random number generators are based on superparamagnetic tunnel junctions (SMTJs) with tunability obtained through spin transfer torque (STT), which unavoidably leads to challenges in designing concatenated networks using these two terminal devices. The more recent development of utilizing spin orbit torque (SOT) allows for a three terminal device design, but can only tune in-plane magnetization freely, which is not very energy efficient due to the needs of overcoming a large demagnetization field. In this work, we experimentally demonstrate for the first time, a stochastic device with perpendicular magnetic anisotropy (PMA) that is completely tunable by SOT without the aid of any external magnetic field. Our measurements lead us to hypothesize that a tilted anisotropy might be responsible for the observed tunability. We carry out stochastic Landau-Lifshitz-Gilbert (sLLG) simulations to confirm our experimental observation. Finally, we build an electrically coupled network of two such stochastic nanomagnet based devices and demonstrate that finite correlation or anti-correlation can be established between their output fluctuations by a weak interconnection, despite having a large difference in their natural fluctuation time scale. Simulations based on a newly developed dynamical model for autonomous circuits composed of low barrier nanomagnets show close agreement with the experimental results. △ Less

Submitted 7 October, 2019; originally announced October 2019.

Journal ref: Phys. Rev. B 101, 094405 (2020)

Autonomous Probabilistic Coprocessing with Petaflips per Second

Authors: Brian Sutton, Rafatul Faria, Lakshmi A. Ghantasala, Risi Jaiswal, Kerem Y. Camsari, Supriyo Datta

Abstract: In this paper we present a concrete design for a probabilistic (p-) computer based on a network of p-bits, robust classical entities fluctuating between -1 and +1, with probabilities that are controlled through an input constructed from the outputs of other p-bits. The architecture of this probabilistic computer is similar to a stochastic neural network with the p-bit playing the role of a binary… ▽ More In this paper we present a concrete design for a probabilistic (p-) computer based on a network of p-bits, robust classical entities fluctuating between -1 and +1, with probabilities that are controlled through an input constructed from the outputs of other p-bits. The architecture of this probabilistic computer is similar to a stochastic neural network with the p-bit playing the role of a binary stochastic neuron, but with one key difference: there is no sequencer used to enforce an ordering of p-bit updates, as is typically required. Instead, we explore \textit{sequencerless} designs where all p-bits are allowed to flip autonomously and demonstrate that such designs can allow ultrafast operation unconstrained by available clock speeds without compromising the solution's fidelity. Based on experimental results from a hardware benchmark of the autonomous design and benchmarked device models, we project that a nanomagnetic implementation can scale to achieve petaflips per second with millions of neurons. A key contribution of this paper is the focus on a hardware metric $-$ flips per second $-$ as a problem and substrate-independent figure-of-merit for an emerging class of hardware annealers known as Ising Machines. Much like the shrinking feature sizes of transistors that have continually driven Moore's Law, we believe that flips per second can be continually improved in later technology generations of a wide class of probabilistic, domain specific hardware. △ Less

Submitted 22 August, 2020; v1 submitted 22 July, 2019; originally announced July 2019.

Comments: 13 pages, 8 figures, 1 table

Journal ref: IEEE Access (2020)

Subnanosecond Fluctuations in Low-Barrier Nanomagnets

Authors: Jan Kaiser, Avinash Rustagi, Kerem Y. Camsari, Jonathan Z. Sun, Supriyo Datta, Pramey Upadhyaya

Abstract: Fast magnetic fluctuations due to thermal torques have useful technological functionality ranging from cryptography to probabilistic computing. The characteristic time of fluctuations in typical uniaxial anisotropy magnets studied so far is bounded from below by the well-known energy relaxation mechanism. This time scales as $α^{-1}$, where $α$ parameterizes the strength of dissipative processes.… ▽ More Fast magnetic fluctuations due to thermal torques have useful technological functionality ranging from cryptography to probabilistic computing. The characteristic time of fluctuations in typical uniaxial anisotropy magnets studied so far is bounded from below by the well-known energy relaxation mechanism. This time scales as $α^{-1}$, where $α$ parameterizes the strength of dissipative processes. Here, we theoretically analyze the fluctuating dynamics in easy-plane and antiferromagnetically coupled nanomagnets. We find in such magnets, the dynamics are strongly influenced by fluctuating intrinsic fields, which give rise to an additional dephasing-type mechanism for washing out correlations. In particular, we establish two time scales for characterizing fluctuations (i) the average time for a nanomagnet to reverse|which for the experimentally relevant regime of low damping is governed primarily by dephasing and becomes independent of $α$, (ii) the time scale for memory loss of a single nanomagnet|which scales as $α^{-1/3}$ and is governed by a combination of energy dissipation and dephasing mechanism. For typical experimentally accessible values of intrinsic fields, the resultant thermal-fluctuation rate is increased by multiple orders of magnitude when compared with the bound set solely by the energy relaxation mechanism in uniaxial magnets. This could lead to higher operating speeds of emerging devices exploiting magnetic fluctuations. △ Less

Submitted 25 November, 2019; v1 submitted 8 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. Applied 12, 054056 (2019)

Rectification in Spin-Orbit Materials Using Low Energy Barrier Magnets

Authors: Shehrin Sayed, Kerem Y. Camsari, Rafatul Faria, Supriyo Datta

Abstract: The coupling of spin-orbit materials to high energy barrier ($\sim$40-60 $k_BT$) nano-magnets has attracted growing interest for exciting new physics and various spintronic applications. We predict that a coupling between the spin-momentum locking (SML) observed in spin-orbit materials and low-energy barrier magnets (LBM) should exhibit a unique multi-terminal rectification for arbitrarily small a… ▽ More The coupling of spin-orbit materials to high energy barrier ($\sim$40-60 $k_BT$) nano-magnets has attracted growing interest for exciting new physics and various spintronic applications. We predict that a coupling between the spin-momentum locking (SML) observed in spin-orbit materials and low-energy barrier magnets (LBM) should exhibit a unique multi-terminal rectification for arbitrarily small amplitude channel currents. The basic idea is to measure the charge current induced spin accumulation in the SML channel in the form of a magnetization dependent voltage using an LBM, either with an in-plane or perpendicular anisotropy (IMA or PMA). The LBM feels an instantaneous spin-orbit torque due to the accumulated spins in the channel which causes the average magnetization to follow the current, leading to the non-linear rectification. We discuss the frequency band of this multi-terminal rectification which can be understood in terms of the angular momentum conservation in the LBM. For a fixed spin-current from the SML channel, the frequency band is same for LBMs with IMA and PMA, as long as they have the same total magnetic moment in a given volume. The proposed all-metallic structure could find application as highly sensitive passive rf detectors and as energy harvesters from weak ambient sources where standard technologies may not operate. △ Less

Submitted 27 May, 2019; v1 submitted 1 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. Applied 11, 054063 (2019)

p-Bits for Probabilistic Spin Logic

Authors: Kerem Y. Camsari, Brian M. Sutton, Supriyo Datta

Abstract: We introduce the concept of a probabilistic or p-bit, intermediate between the standard bits of digital electronics and the emerging q-bits of quantum computing. We show that low barrier magnets or LBM's provide a natural physical representation for p-bits and can be built either from perpendicular magnets (PMA) designed to be close to the in-plane transition or from circular in-plane magnets (IMA… ▽ More We introduce the concept of a probabilistic or p-bit, intermediate between the standard bits of digital electronics and the emerging q-bits of quantum computing. We show that low barrier magnets or LBM's provide a natural physical representation for p-bits and can be built either from perpendicular magnets (PMA) designed to be close to the in-plane transition or from circular in-plane magnets (IMA). Magnetic tunnel junctions (MTJ) built using LBM's as free layers can be combined with standard NMOS transistors to provide three-terminal building blocks for large scale probabilistic circuits that can be designed to perform useful functions. Interestingly, this three-terminal unit looks just like the 1T/MTJ device used in embedded MRAM technology, with only one difference: the use of an LBM for the MTJ free layer. We hope that the concept of p-bits and p-circuits will help open up new application spaces for this emerging technology. However, a p-bit need not involve an MTJ, any fluctuating resistor could be combined with a transistor to implement it, while completely digital implementations using conventional CMOS technology are also possible. The p-bit also provides a conceptual bridge between two active but disjoint fields of research, namely stochastic machine learning and quantum computing. First, there are the applications that are based on the similarity of a p-bit to the binary stochastic neuron (BSN), a well-known concept in machine learning. Three-terminal p-bits could provide an efficient hardware accelerator for the BSN. Second, there are the applications that are based on the p-bit being like a poor man's q-bit. Initial demonstrations based on full SPICE simulations show that several optimization problems including quantum annealing are amenable to p-bit implementations which can be scaled up at room temperature using existing technology. △ Less

Submitted 11 March, 2019; v1 submitted 11 September, 2018; originally announced September 2018.

Journal ref: Applied Physics Reviews, 6, 011305 (2019)

Direct Observation of Valley Coupled Topological Current in MoS$_2$

Authors: Terry Y. T. Hung, Kerem Y. Camsari, Shengjiao Zhang, Pramey Upadhyaya, Zhihong Chen

Abstract: The valley degree of freedom of electrons in two-dimensional transition metal dichalcogenides has been extensively studied by theory, optical and optoelectronic experiments. However, generation and detection of pure valley current without relying on optical selection have not yet been demonstrated in these materials. Here, we report that valley current can be electrically induced and detected thro… ▽ More The valley degree of freedom of electrons in two-dimensional transition metal dichalcogenides has been extensively studied by theory, optical and optoelectronic experiments. However, generation and detection of pure valley current without relying on optical selection have not yet been demonstrated in these materials. Here, we report that valley current can be electrically induced and detected through the valley Hall effect and inverse valley Hall effect, respectively, in monolayer molybdenum disulfide. Specifically, long-range valley transport is observed over half a micron distance at room temperature. Our findings will enable a new generation of electronic devices utilizing the valley degree of freedom, which can be used for future novel valleytronic applications. △ Less

Submitted 15 May, 2018; originally announced May 2018.

Journal ref: Science Advances, Vol. 5, no. 4, eaau6478 (2019)

Modular Compact Modeling of Magnetic Tunnel Junction Devices

Authors: Mustafa Mert Torunbalci, Pramey Upadhyaya, Sunil A. Bhave, Kerem Y. Camsari

Abstract: This paper describes a robust, modular, and physics- based circuit framework to model conventional and emerging Magnetic Tunnel Junction (MTJ) devices. Magnetization dynamics are described by the stochastic Landau-Lifshitz-Gilbert (sLLG) equation whose results are rigorously benchmarked with a Fokker-Planck Equation (FPE) description of magnet dynamics. We then show how sLLG is coupled to transpor… ▽ More This paper describes a robust, modular, and physics- based circuit framework to model conventional and emerging Magnetic Tunnel Junction (MTJ) devices. Magnetization dynamics are described by the stochastic Landau-Lifshitz-Gilbert (sLLG) equation whose results are rigorously benchmarked with a Fokker-Planck Equation (FPE) description of magnet dynamics. We then show how sLLG is coupled to transport equations of MTJ-based devices in a unified circuit platform. Step by step, we illustrate how the physics-based MTJ model can be extended to include different spintronics phenomena, including spin-transfer-torque (STT), voltage-control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) phenomena by experimentally benchmarked examples. To demonstrate how our approach can be used in the exploration of novel MTJ-based devices, we also present a recently proposed MEMS resonator- driven spin-torque nano oscillator (STNO) that can reduce the phase noise of STNOs. We briefly elaborate on the use of our framework beyond conventional devices. △ Less

Submitted 22 August, 2018; v1 submitted 30 April, 2018; originally announced May 2018.

Journal ref: IEEE Transactions on Electron Devices (2018)

Equivalent Circuit for Magnetoelectric Read and Write Operations

Authors: Kerem Y. Camsari, Rafatul Faria, Orchi Hassan, Brian M. Sutton, Supriyo Datta

Abstract: We describe an equivalent circuit model applicable to a wide variety of magnetoelectric phenomena and use SPICE simulations to benchmark this model against experimental data. We use this model to suggest a different mode of operation where the "1" and "0'" states are not represented by states with net magnetization (like $m_x$, $m_y$ or $m_z$) but by different easy axes, quantitatively described b… ▽ More We describe an equivalent circuit model applicable to a wide variety of magnetoelectric phenomena and use SPICE simulations to benchmark this model against experimental data. We use this model to suggest a different mode of operation where the "1" and "0'" states are not represented by states with net magnetization (like $m_x$, $m_y$ or $m_z$) but by different easy axes, quantitatively described by ($m_x^2 - m_y^2$) which switches from "0" to "1" through the write voltage. This change is directly detected as a read signal through the inverse effect. The use of ($m_x^2 - m_y^2$) to represent a bit is a radical departure from the standard convention of using the magnetization ($m$) to represent information. We then show how the equivalent circuit can be used to build a device exhibiting tunable randomness and suggest possibilities for extending it to non-volatile memory with read and write capabilities, without the use of external magnetic fields or magnetic tunnel junctions. △ Less

Submitted 16 April, 2018; v1 submitted 29 October, 2017; originally announced October 2017.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Applied 9, 044020 (2018)

Reservoir Computing using Stochastic p-Bits

Authors: Samiran Ganguly, Kerem Y. Camsari, Avik W. Ghosh

Abstract: We present a general hardware framework for building networks that directly implement Reservoir Computing, a popular software method for implementing and training Recurrent Neural Networks and are particularly suited for temporal inferencing and pattern recognition. We provide a specific example of a candidate hardware unit based on a combination of soft-magnets, spin-orbit materials and CMOS tran… ▽ More We present a general hardware framework for building networks that directly implement Reservoir Computing, a popular software method for implementing and training Recurrent Neural Networks and are particularly suited for temporal inferencing and pattern recognition. We provide a specific example of a candidate hardware unit based on a combination of soft-magnets, spin-orbit materials and CMOS transistors that can implement these networks. Efficient non von-Neumann hardware implementation of reservoir computers can open up a pathway for integration of temporal Neural Networks in a wide variety of emerging systems such as Internet of Things (IoTs), industrial controls, bio- and photo-sensors, and self-driving automotives. △ Less

Submitted 28 September, 2017; originally announced September 2017.

Comments: 4 pages, 6 figures, 1 table

Magneto Acoustic Spin Hall Oscillators

Authors: Mustafa Mert Torunbalci, Tanay A. Gosavi, Kerem Y. Camsari, Sunil A. Bhave

Abstract: This paper introduces a novel oscillator that combines the tunability of spin Hall-driven nano oscillators with the high quality factor (Q) of high overtone bulk acoustic wave resonators (HBAR), integrating both reference and tunable oscillators on the same chip with CMOS. In such magneto acoustic spin Hall (MASH) oscillators, voltage oscillations across the magnetic tunnel junction (MTJ) that ari… ▽ More This paper introduces a novel oscillator that combines the tunability of spin Hall-driven nano oscillators with the high quality factor (Q) of high overtone bulk acoustic wave resonators (HBAR), integrating both reference and tunable oscillators on the same chip with CMOS. In such magneto acoustic spin Hall (MASH) oscillators, voltage oscillations across the magnetic tunnel junction (MTJ) that arise from a spin-orbit torque (SOT) are shaped by the transmission response of the HBAR that acts as a multiple peak-bandpass filter and a delay element due to its large time constant, providing delayed feedback. The filtered voltage oscillations can be fed back to the MTJ via a) strain, b) current, or c) magnetic field. We develop a SPICE-based circuit model by combining experimentally benchmarked models including the stochastic Landau-Lifshitz-Gilbert (sLLG) equation for magnetization dynamics and the Butterworth Van Dyke (BVD) circuit for the HBAR. Using the self-consistent model, we project up to $\sim$ 50X enhancement in the oscillator linewidth with Q reaching up to 52825 at 3 GHz, while preserving the tunability by locking the STNO to the nearest high Q peak of the HBAR. We expect that our results will inspire MEMS-based solutions to spintronic devices by combining attractive features of both fields for a variety of applications. △ Less

Submitted 18 January, 2018; v1 submitted 15 August, 2017; originally announced August 2017.

Journal ref: Scientific Reports 8, Article number: 1119 (2018)

Low Barrier Nanomagnets as p-bits for Spin Logic

Authors: Rafatul Faria, Kerem Yunus Camsari, Supriyo Datta

Abstract: It has recently been shown that a suitably interconnected network of tunable telegraphic noise generators or "p-bits" can be used to perform even precise arithmetic functions like a 32-bit adder. In this paper we use simulations based on the stochastic Landau-Lifshitz-Gilbert (sLLG) equation to demonstrate that similar impressive functions can be performed using unstable nanomagnets with energy ba… ▽ More It has recently been shown that a suitably interconnected network of tunable telegraphic noise generators or "p-bits" can be used to perform even precise arithmetic functions like a 32-bit adder. In this paper we use simulations based on the stochastic Landau-Lifshitz-Gilbert (sLLG) equation to demonstrate that similar impressive functions can be performed using unstable nanomagnets with energy barriers as low as a fraction of a kT. This is surprising since the magnetization of low barrier nanomagnets is not telegraphic with discrete values of +1 and -1. Rather it fluctuates randomly among all values between -1 and +1, and the output magnets are read with a thresholding device that translates all positive values to 1 and all negative values to zero. We present sLLG-based simulations demonstrating the operation of a 32-bit adder with a network of several hundred nanomagnets, exhibiting a remarkably precise correlation: The input magnets {A} and {B} as well as the output magnets {S} all fluctuate randomly and yet the quantity A+B-S is sharply peaked around zero! If we fix {A} and {B}, the sum magnets {S} rapidly converge to a unique state with S=A+B so that the system acts as an adder. But unlike standard adders, the operation is invertible. If we fix {S} and {B}, the remaining magnets {A} converge to the difference A=S-B. These examples suggest a new direction for the field of nanomagnetics away from stable high barrier magnets towards stochastic low barrier magnets which not only operate with lower currents, but are also more promising for continued downscaling. △ Less

Submitted 11 April, 2017; v1 submitted 16 November, 2016; originally announced November 2016.

Comments: This is the fourth in a series of papers on probabilistic spin logic (PSL). The earlier papers are: (1)Behin-Aein, Behtash, Vinh Diep, and Supriyo Datta. "A building block for hardware belief networks." Scientific Reports 6 (2016)., (2) Sutton, Brian, et al. "Intrinsic optimization using stochastic nanomagnets." Scientific Reports 7 (2017)., (3) Camsari et al. arXiv:1610.00377

Journal ref: IEEE Magnetics Letters , vol.PP, no.99, pp.1-1, 2017 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7883892&isnumber=6832516

Stochastic p-bits for Invertible Logic

Authors: Kerem Yunus Camsari, Rafatul Faria, Brian M. Sutton, Supriyo Datta

Abstract: Conventional logic and memory devices are built out of deterministic units such as transistors, or magnets with energy barriers in excess of 40-60 kT. We show that stochastic units, p-bits, can be interconnected to create robust correlations that implement Boolean functions with impressive accuracy, comparable to standard circuits. Also they are invertible, a unique property that is absent in digi… ▽ More Conventional logic and memory devices are built out of deterministic units such as transistors, or magnets with energy barriers in excess of 40-60 kT. We show that stochastic units, p-bits, can be interconnected to create robust correlations that implement Boolean functions with impressive accuracy, comparable to standard circuits. Also they are invertible, a unique property that is absent in digital circuits. When operated in the direct mode, the input is clamped, and the network provides the correct output. In the inverted mode, the output is clamped, and the network fluctuates among possible inputs consistent with that output. We present an implementation of an invertible gate to bring out the key role of a three-terminal building block to enable the construction of correlated p-bit networks. The results for this implementation agree well with those from a universal model, showing that p-bits need not be magnet-based: any three-terminal tunable random bit generator should be suitable. We present an algorithm for designing a Boltzmann machine (BM) with symmetric connections that implements a given truth table. We then show how BM Full Adders can be interconnected in a partially directed manner to implement large operations such as 32-bit addition. Hundreds of p-bits get precisely correlated such that the correct answer out of 2^33 possibilities can be extracted by looking at the mode of a number of time samples. With perfect directivity a small number of samples is enough, while for less directed connections more samples are needed, but even in the former case invertibility is largely preserved. This combination of accuracy and invertibility is enabled by the hybrid design that uses bidirectional units to construct circuits with partially directed connections. We establish this result with examples including a 4-bit multiplier which in inverted mode functions as a factorizer. △ Less

Submitted 21 July, 2017; v1 submitted 2 October, 2016; originally announced October 2016.

Comments: This is the third in a series of papers on probabilistic spin logic (PSL). The other papers are: arXiv:1606.00130, arXiv:1608.00679, arXiv:1611.05477

Journal ref: Phys. Rev. X 7, 031014 (2017)

Evaluating Spintronic Devices Using The Modular Approach

Authors: Samiran Ganguly, Kerem Yunus Camsari, Supriyo Datta

Abstract: Over the past decade a large family of spintronic devices have been proposed as candidates for replacing CMOS for future digital logic circuits. Using the recently developed Modular Approach framework, we investigate and identify the physical bottlenecks and engineering challenges facing current spintronic devices. We then evaluate how systematic advancements in material properties and device desi… ▽ More Over the past decade a large family of spintronic devices have been proposed as candidates for replacing CMOS for future digital logic circuits. Using the recently developed Modular Approach framework, we investigate and identify the physical bottlenecks and engineering challenges facing current spintronic devices. We then evaluate how systematic advancements in material properties and device design innovations impact the performance of spintronic devices, as a possible continuation of Moore's Law, even though some of these projections are speculative and may require technological breakthroughs. Lastly, we illustrate the use of the Modular Approach as an exploratory tool for probabilistic networks, using superparamagnetic magnets as building blocks for such networks. These building blocks leverage the inherent physics of stochastic spin-torque switching and could provide ultra-compact and efficient hardware for beyond-Boolean computational paradigms. △ Less

Submitted 23 March, 2017; v1 submitted 12 August, 2016; originally announced August 2016.

Comments: 20 pages, 7 figures. Includes supplementary at the end

Journal ref: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol. 2, pp. 51-60, Dec. 2016

Intrinsic optimization using stochastic nanomagnets

Authors: Brian Sutton, Kerem Yunus Camsari, Behtash Behin-Aein, Supriyo Datta

Abstract: This paper draws attention to a hardware system which can be engineered so that its intrinsic physics is described by the generalized Ising model and can encode the solution to many important NP-hard problems as its ground state. The basic constituents are stochastic nanomagnets which switch randomly between the $\pm 1$ Ising states and can be monitored continuously with standard electronics. Thei… ▽ More This paper draws attention to a hardware system which can be engineered so that its intrinsic physics is described by the generalized Ising model and can encode the solution to many important NP-hard problems as its ground state. The basic constituents are stochastic nanomagnets which switch randomly between the $\pm 1$ Ising states and can be monitored continuously with standard electronics. Their mutual interactions can be short or long range, and their strengths can be reconfigured as needed to solve specific problems and to anneal the system at room temperature. The natural laws of statistical mechanics guide the network of stochastic nanomagnets at GHz speeds through the collective states with an emphasis on the low energy states that represent optimal solutions. As proof-of-concept, we present simulation results for standard NP-complete examples including a 16-city traveling salesman problem using experimentally benchmarked models for spin-transfer torque driven stochastic nanomagnets. △ Less

Submitted 25 March, 2017; v1 submitted 1 August, 2016; originally announced August 2016.

Comments: 12 pages, 3 figures

Journal ref: Sci. Rep. 7, 44370 (2017)

Ultrafast Spin-Transfer-Torque Switching of Synthetic Ferrimagnets

Authors: Kerem Yunus Camsari, Ahmed Zeeshan Pervaiz, Rafatul Faria, Ernesto E. Marinero, Supriyo Datta

Abstract: The switching speed and the write current required for spin-transfer-torque reversal of spintronic devices such as magnetic tunnel junctions (MTJ) currently hinder their wide implementation into memory and logic devices. This problem is further exacerbated as the dimensions of MTJ nanostructures are scaled down to tens of nanometers in diameter, as higher magnetic anisotropy materials are required… ▽ More The switching speed and the write current required for spin-transfer-torque reversal of spintronic devices such as magnetic tunnel junctions (MTJ) currently hinder their wide implementation into memory and logic devices. This problem is further exacerbated as the dimensions of MTJ nanostructures are scaled down to tens of nanometers in diameter, as higher magnetic anisotropy materials are required to meet thermal stability requirements that demand higher switching current densities. Here, we propose a simple solution to these issues based on synthetic ferrimagnet (SFM) structures. It is commonly assumed that to achieve a given switching delay, the current has to exceed the critical current by a certain factor and so a higher critical current implies a higher switching current. We show that this is not the case for SFM structures which can provide significantly reduced switching delay for a given current density, even though the critical current is increased. This non-intuitive result can be understood from the requirements of angular momentum conservation. We conclude that a 20 nm diameter MTJ incorporating the proposed SFM free layer structure can be switched in tens of picosecond time scales. This remarkable switching speed can be attained by employing current perpendicular magnetic anisotropy materials with experimentally demonstrated exchange coupling strengths. △ Less

Submitted 14 June, 2016; v1 submitted 14 June, 2016; originally announced June 2016.

Non-Equilibrium Green's Function based Circuit Models for Coherent Spin Devices

Authors: Kerem Y. Camsari, Samiran Ganguly, Deepanjan Datta, Supriyo Datta

Abstract: With recent developments in spintronics, it is now possible to envision spin-driven devices with magnets and interconnects that require a new class of transport models using generalized Fermi functions and currents, each with four components: one for charge and three for spin. The corresponding impedance elements are not pure numbers but $4\times4$ matrices. Starting from the Non-Equilibrium Green… ▽ More With recent developments in spintronics, it is now possible to envision spin-driven devices with magnets and interconnects that require a new class of transport models using generalized Fermi functions and currents, each with four components: one for charge and three for spin. The corresponding impedance elements are not pure numbers but $4\times4$ matrices. Starting from the Non-Equilibrium Green's Function (NEGF) formalism in the elastic, phase-coherent transport regime, we develop spin generalized Landauer-Büttiker formulas involving such $4\times 4$ conductances, for multi-terminal devices in the presence of Normal-Metal (NM) leads. In addition to usual terminal conductances describing currents at the contacts, we provide spin-transfer torque conductances describing the spin currents absorbed by ferromagnetic (FM) regions inside the conductor, specifying both of these currents in terms of Fermi functions at the terminals. We derive universal sum rules and reciprocity relations that would be obeyed by such matrix conductances. Finally, we apply our formulation to two example Hamiltonians describing the Rashba and the Hanle effect in 2D. Our results allows the use of pure quantum transport models as building blocks in constructing circuit models for complex spintronic and nano-magnetic structures and devices for simulation in SPICE-like simulators. △ Less

Submitted 24 August, 2019; v1 submitted 27 February, 2014; originally announced February 2014.

Journal ref: IEEE Transactions on Nanotechnology, Vol. 18, 858-865 (2019)