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High-field Spatial Imaging of Charge Transport in Silicon at Low Temperature
Authors:
C. Stanford,
R. A. Moffatt,
N. A. Kurinsky,
P. L. Brink,
B. Cabrera,
M. Cherry,
F. Insulla,
M. Kelsey,
F. Ponce,
K. Sundqvist,
S. Yellin,
B. A. Young
Abstract:
We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$Ω$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis, and to verify our low-temperature Monte Carlo software. The range of field…
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We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$Ω$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis, and to verify our low-temperature Monte Carlo software. The range of field strengths in this paper exceed those used in the previous study (DOI: 10.1063/1.5049691) by a factor of 10, and now encompasses the region in which some recent silicon dark matter detectors operate (DOI: 10.1103/PhysRevLett.121.051301). We also report on a phenomenon of surface charge trapping which can reduce expected charge collection.
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Submitted 4 October, 2019;
originally announced October 2019.
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Spatial Imaging of Charge Transport in Silicon at Low Temperature
Authors:
R. A. Moffatt,
N. A. Kurinsky,
C. Stanford,
J. Allen,
P. L. Brink,
B. Cabrera,
M. Cherry,
F. Inuslla,
F. Ponce,
K. Sundqvist,
S. Yellin,
J. J. Yen,
B. A. Young
Abstract:
We present direct imaging measurements of charge transport across a 1 cm$\times$ 1 cm$\times$ 4 mm crystal of high purity silicon ($\sim$20 k$Ω$cm) at temperatures between 500 mK and and 5 K. We use these data to determine the intervalley scattering rate of electrons as a function of the electric field applied along the $\langle 111 \rangle$ crystal axis, and we present a phenomenological model of…
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We present direct imaging measurements of charge transport across a 1 cm$\times$ 1 cm$\times$ 4 mm crystal of high purity silicon ($\sim$20 k$Ω$cm) at temperatures between 500 mK and and 5 K. We use these data to determine the intervalley scattering rate of electrons as a function of the electric field applied along the $\langle 111 \rangle$ crystal axis, and we present a phenomenological model of intervalley scattering that explains the constant scattering rate seen at low-voltage for cryogenic temperatures. We also demonstrate direct imaging measurements of effective hole mass anisotropy, which is strongly dependent on both temperature and electric field strength. The observed effects can be explained by a warping of the valence bands for carrier energies near the spin-orbit splitting energy in silicon.
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Submitted 11 December, 2018; v1 submitted 20 July, 2018;
originally announced July 2018.
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Imaging the Oblique Propagation of Electrons in Germanium Crystals at Low Temperature and Low Electric Field
Authors:
R. A. Moffatt,
B. Cabrera,
B. M. Corcoran,
J. M. Kreikebaum,
P. Redl,
B. Shank,
J. J. Yen,
B. A. Young,
P. L. Brink,
M. Cherry,
A. Tomada,
A. Phipps,
B. Sadoulet,
K. M. Sundqvist
Abstract:
Excited electrons in the conduction band of germanium collect into four energy minima, or valleys, in momentum space. These local minima have highly anisotropic mass tensors which cause the electrons to travel in directions which are oblique to an applied electric field at sub-Kelvin temperatures and low electric fields, in contrast to the more isotropic behavior of the holes. This experiment prod…
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Excited electrons in the conduction band of germanium collect into four energy minima, or valleys, in momentum space. These local minima have highly anisotropic mass tensors which cause the electrons to travel in directions which are oblique to an applied electric field at sub-Kelvin temperatures and low electric fields, in contrast to the more isotropic behavior of the holes. This experiment produces, for the first time, a full two-dimensional image of the oblique electron and hole propagation and the quantum transitions of electrons between valleys for electric fields oriented along the [0,0,1] direction. Charge carriers are excited with a focused laser pulse on one face of a germanium crystal and then drifted through the crystal by a uniform electric field of strength between 0.5 and 6 V/cm. The pattern of charge density arriving on the opposite face is used to reconstruct the trajectories of the carriers. Measurements of the two-dimensional pattern of charge density are compared in detail with Monte Carlo simulations developed for the Cryogenic Dark Matter Search (CDMS) to model the transport of charge carriers in high-purity germanium detectors.
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Submitted 31 August, 2015; v1 submitted 30 April, 2015;
originally announced May 2015.
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Growth of alpha-beta phase W thin films over steep Al topography in a confocal sputtering machine
Authors:
John Mark Kreikebaum,
Blas Cabrera,
Jeff Yen,
Paul Brink,
Astrid Tomada,
Matt Cherry,
Betty Young
Abstract:
We report on thin-film processing improvements in the fabrication of superconducting quasiparticle-trap-assisted electrothermal-feedback transition-edge sensors (QETs) used in the design of Cryogenic Dark Matter Search (CDMS) detectors. The work was performed as part of a detector upgrade project that included optimization of a new confocal sputtering system and development of etch recipes compati…
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We report on thin-film processing improvements in the fabrication of superconducting quasiparticle-trap-assisted electrothermal-feedback transition-edge sensors (QETs) used in the design of Cryogenic Dark Matter Search (CDMS) detectors. The work was performed as part of a detector upgrade project that included optimization of a new confocal sputtering system and development of etch recipes compatible with patterning 40 nm-thick, mixed-phase W films deposited on 300-600 nm-thick, patterned Al. We found that our standard exothermic Al wet etch recipes provided inadequate W/Al interfaces and led to poor device performance. We developed a modified Al wet-etch recipe that effectively mitigates geometrical step-coverage limitations while maintaining our existing device design. Data presented here include SEM and FIB images of films and device interfaces obtained with the new Al etch method. We also introduce a method for quantitatively measuring the energy collection efficiency through these interfaces.
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Submitted 9 October, 2014;
originally announced October 2014.
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Nonlinear Optimal Filter Technique For Analyzing Energy Depositions In TES Sensors Driven Into Saturation
Authors:
B. Shank,
J. J. Yen,
B. Cabrera,
J. M. Kreikebaum,
R. Moffatt,
P. Redl,
B. A. Young,
P. L. Brink,
M. Cherry,
A. Tomada
Abstract:
We present a detailed thermal and electrical model of superconducting transition edge sensors (TESs) connected to quasiparticle (qp) traps, such as the W TESs connected to Al qp traps used for CDMS (Cryogenic Dark Matter Search) Ge and Si detectors. We show that this improved model, together with a straightforward time-domain optimal filter, can be used to analyze pulses well into the nonlinear sa…
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We present a detailed thermal and electrical model of superconducting transition edge sensors (TESs) connected to quasiparticle (qp) traps, such as the W TESs connected to Al qp traps used for CDMS (Cryogenic Dark Matter Search) Ge and Si detectors. We show that this improved model, together with a straightforward time-domain optimal filter, can be used to analyze pulses well into the nonlinear saturation region and reconstruct absorbed energies with optimal energy resolution.
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Submitted 26 June, 2014;
originally announced June 2014.
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Monte Carlo Comparisons to a Cryogenic Dark Matter Search Detector with low Transition-Edge-Sensor Transition Temperature
Authors:
S. W. Leman,
K. A. McCarthy,
P. L. Brink,
B. Cabrera,
M. Cherry,
E. Do Couto E Silva,
E. Figueroa-Feliciano,
P. Kim,
N. Mirabolfathi,
M. Pyle,
R. Resch,
B. Sadoulet,
B. Serfass,
K. M. Sundqvist,
A. Tomada,
B. A. Young
Abstract:
We present results on phonon quasidiffusion and Transition Edge Sensor (TES) studies in a large, 3 inch diameter, 1 inch thick [100] high purity germanium crystal, cooled to 50 mK in the vacuum of a dilution refrigerator, and exposed with 59.5 keV gamma-rays from an Am-241 calibration source. We compare calibration data with results from a Monte Carlo which includes phonon quasidiffusion and the g…
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We present results on phonon quasidiffusion and Transition Edge Sensor (TES) studies in a large, 3 inch diameter, 1 inch thick [100] high purity germanium crystal, cooled to 50 mK in the vacuum of a dilution refrigerator, and exposed with 59.5 keV gamma-rays from an Am-241 calibration source. We compare calibration data with results from a Monte Carlo which includes phonon quasidiffusion and the generation of phonons created by charge carriers as they are drifted across the detector by ionization readout channels. The phonon energy is then parsed into TES based phonon readout channels and input into a TES simulator.
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Submitted 6 September, 2011;
originally announced September 2011.
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Time Evolution of Electric Fields in CDMS Detectors
Authors:
S. W. Leman,
D. Brandt,
P. L. Brink,
B. Cabrera,
H. Chagani,
M. Cherry,
P. Cushman,
E. Do Couto E Silva,
T. Doughty,
E. Figueroa-Feliciano,
V. Mandic,
K. A. McCarthy,
N. Mirabolfathi,
M. Pyle,
A. Reisetter,
R. Resch,
B. Sadoulet,
B. Serfass,
K. M. Sundqvist,
A. Tomada,
B. A. Young,
J. Zhang
Abstract:
The Cryogenic Dark Matter Search (CDMS) utilizes large mass, 3" diameter x 1" thick target masses as particle detectors. The target is instrumented with both phonon and ionization sensors, the later providing a $\sim$1 V cm$^{-1}$ electric field in the detector bulk. Cumulative radiation exposure which creates $\sim 200\times 10^6$ electron-hole pairs is sufficient to produce a comparable reverse…
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The Cryogenic Dark Matter Search (CDMS) utilizes large mass, 3" diameter x 1" thick target masses as particle detectors. The target is instrumented with both phonon and ionization sensors, the later providing a $\sim$1 V cm$^{-1}$ electric field in the detector bulk. Cumulative radiation exposure which creates $\sim 200\times 10^6$ electron-hole pairs is sufficient to produce a comparable reverse field in the detector thereby degrading the ionization channel performance. To study this, the existing CDMS detector Monte Carlo has been modified to allow for an event by event evolution of the bulk electric field, in three spatial dimensions. Our most resent results and interpretation are discussed.
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Submitted 31 August, 2011;
originally announced August 2011.
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Phonon Quasidiffusion in Cryogenic Dark Matter Search Large Germanium Detectors
Authors:
S. W. Leman,
B. Cabrera,
K. A. McCarthy,
M. Pyle,
R. Resch,
B. Sadoulet,
K. M. Sundqvist,
P. L. Brink,
M. Cherry,
E. Do Couto E Silva,
E. Figueroa-Feliciano,
N. Mirabolfathi,
B. Serfass,
A. Tomada
Abstract:
We present results on quasidiffusion studies in large, 3 inch diameter, 1 inch thick [100] high purity germanium crystals, cooled to 50 mK in the vacuum of a dilution refrigerator, and exposed with 59.5 keV gamma-rays from an Am-241 calibration source. We compare data obtained in two different detector types, with different phonon sensor area coverage, with results from a Monte Carlo. The Monte Ca…
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We present results on quasidiffusion studies in large, 3 inch diameter, 1 inch thick [100] high purity germanium crystals, cooled to 50 mK in the vacuum of a dilution refrigerator, and exposed with 59.5 keV gamma-rays from an Am-241 calibration source. We compare data obtained in two different detector types, with different phonon sensor area coverage, with results from a Monte Carlo. The Monte Carlo includes phonon quasidiffusion and the generation of phonons created by charge carriers as they are drifted across the detector by ionization readout channels.
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Submitted 18 July, 2011;
originally announced July 2011.
