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Electronic ferroelectricity and magneto-electric effect in phase separated magnetic oxidesElectronic ferroelectricity and magneto-electric effect in phase separated magnetic oxides
Authors:
O. G. Udalov,
I. S. Beloborodov
Abstract:
We consider phase separated states in magnetic oxides (MO) thin films. We show that these states have a non-zero electric polarization. Moreover, the polarization is intimately related to a spatial distribution of magnetization in the film. Polarized states with opposite polarization and opposite magnetic configuration are degenerate. An external electric field removes the degeneracy and allows to…
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We consider phase separated states in magnetic oxides (MO) thin films. We show that these states have a non-zero electric polarization. Moreover, the polarization is intimately related to a spatial distribution of magnetization in the film. Polarized states with opposite polarization and opposite magnetic configuration are degenerate. An external electric field removes the degeneracy and allows to switch between the two states. So, one can control electric polarization and magnetic configuration of the phase separated MO thin film with the external electric field.
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Submitted 19 September, 2019;
originally announced September 2019.
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Stripe structures in phase separated magnetic oxides
Authors:
O. G. Udalov,
I. S. Beloborodov
Abstract:
We investigate the phase separated inhomogeneous charge and spin states in magnetic oxides. In particular, we study one dimensional harmonic waves and stripe structures. We show that harmonic spin charge waves are unstable and inevitably transform into two or three dimensional structures, while the stripe structures can be stable for certain parameters. Such stripe structures may allow the control…
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We investigate the phase separated inhomogeneous charge and spin states in magnetic oxides. In particular, we study one dimensional harmonic waves and stripe structures. We show that harmonic spin charge waves are unstable and inevitably transform into two or three dimensional structures, while the stripe structures can be stable for certain parameters. Such stripe structures may allow the control of magnetic state with electric field in a magnetic oxide thin film.
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Submitted 22 April, 2019;
originally announced April 2019.
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Studying of the interlayer interaction in magnetic multilayers (FM/I/FM) measuring the FMR peak asymmetry
Authors:
S. N. Vdovichev,
N. S. Gusev,
S. A. Gusev,
L. I. Budarin,
D. A. Tatarskiy,
O. L. Ermolaeva,
V. V. Rogov,
O. G. Udalov,
I. S. Beloborodov,
E. S. Demidov,
A. A. Fraerman
Abstract:
We experimentally study the interlayer interaction in a magnetic multilayer system ferromagnet/insulator/ferromagnet with different spacer thickness. We demonstrate that the sign and the magnitude of the interaction can be deduced from the FMR peak shape rather than from the FMR peak shift. The proposed technique allows studying the interlayer interaction using a single sample (without a reference…
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We experimentally study the interlayer interaction in a magnetic multilayer system ferromagnet/insulator/ferromagnet with different spacer thickness. We demonstrate that the sign and the magnitude of the interaction can be deduced from the FMR peak shape rather than from the FMR peak shift. The proposed technique allows studying the interlayer interaction using a single sample (without a reference sample for comparison).
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Submitted 22 November, 2018;
originally announced November 2018.
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Magneto-electric effect in doped magnetic ferroelectrics
Authors:
O. G. Udalov,
I. S. Beloborodov
Abstract:
We propose a model of magneto-electric effect in doped magnetic ferroelectrics. This magneto-electric effect does not involve the spin-orbit coupling and is based purely on the Coulomb interaction. We calculate magnetic phase diagram of doped magnetic ferroelectrics. We show that magneto-electric coupling is pronounced only for ferroelectrics with low dielectric constant. We find that magneto-elec…
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We propose a model of magneto-electric effect in doped magnetic ferroelectrics. This magneto-electric effect does not involve the spin-orbit coupling and is based purely on the Coulomb interaction. We calculate magnetic phase diagram of doped magnetic ferroelectrics. We show that magneto-electric coupling is pronounced only for ferroelectrics with low dielectric constant. We find that magneto-electric coupling leads to modification of magnetization temperature dependence in the vicinity of ferroelectric phase transition. A peak of magnetization appears. We find that magnetization of doped magnetic ferroelectrics strongly depends on applied electric field.
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Submitted 9 January, 2018;
originally announced January 2018.
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Influence of image forces on the interlayer exchange interaction in magnetic tunnel junctions with ferroelectric barrier
Authors:
O. G. Udalov,
I. S. Beloborodov
Abstract:
We study interlayer exchange interaction in magnetic tunnel junctions with ferroelectric barrier. We focus on the influence of image forces on the voltage dependence of the interlayer magnetic interaction (magneto-electric effect). The influence of the image forces is twofold: 1) they significantly enforce magneto-electric effect occurring due to the surface charges at the interface between ferroe…
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We study interlayer exchange interaction in magnetic tunnel junctions with ferroelectric barrier. We focus on the influence of image forces on the voltage dependence of the interlayer magnetic interaction (magneto-electric effect). The influence of the image forces is twofold: 1) they significantly enforce magneto-electric effect occurring due to the surface charges at the interface between ferroelectric and ferromagnets; 2) in combination with voltage dependent dielectric constant of the ferroelectric barrier image forces cause an additional contribution to the magneto-electric effect in magnetic tunnel junctions. This contribution can exceed the one coming from surface charges. We compare the interlayer exchange coupling voltage variation with spin transfer torque effect and show that for half-metallic electrodes the interlayer exchange coupling variation is dominant and defines the magnetic state and dynamics of magnetization in the tunnel junction.
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Submitted 9 January, 2018;
originally announced January 2018.
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Influence of image forces on the electron transport in ferroelectric tunnel junctions
Authors:
O. G. Udalov,
I. S. Beloborodov
Abstract:
We study influence of image forces on conductance of ferroelectric tunnel junctions. We show that the influence of image forces is twofold: i) they enhance the electro-resistance effect due to polarization hysteresis in symmetric tunnel junctions at non-zero bias and ii) they produce the electro-resistance effect due to hysteresis of dielectric permittivity of ferroelectric barrier. We study depen…
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We study influence of image forces on conductance of ferroelectric tunnel junctions. We show that the influence of image forces is twofold: i) they enhance the electro-resistance effect due to polarization hysteresis in symmetric tunnel junctions at non-zero bias and ii) they produce the electro-resistance effect due to hysteresis of dielectric permittivity of ferroelectric barrier. We study dependence of ferroelectric tunnel junction conductance on temperature and show that image forces lead to strong conductance variation with temperature.
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Submitted 6 April, 2017;
originally announced April 2017.
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Competition of the Coulomb and hopping based exchange interactions in granular magnets
Authors:
O. G. Udalov,
I. S. Beloborodov
Abstract:
We study exchange coupling due to the interelectron Coulomb interaction between two ferromagnetic grains embedded into insulating matrix. This contribution to the exchange interaction complements the contribution due to virtual electron hopping between the grains. We show that the Coulomb and the hopping based exchange interactions are comparable. However, for most system parameters these contribu…
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We study exchange coupling due to the interelectron Coulomb interaction between two ferromagnetic grains embedded into insulating matrix. This contribution to the exchange interaction complements the contribution due to virtual electron hopping between the grains. We show that the Coulomb and the hopping based exchange interactions are comparable. However, for most system parameters these contributions have opposite signs and compete with each other. In contrast to the hopping based exchange interaction the Coulomb based exchange is inversely proportional to the dielectric constant of the insulating matrix $\varepsilon$. The total intergrain exchange interaction has a complicated dependence on the dielectric permittivity of the insulating matrix. Increasing $\varepsilon$ one can observe the ferromagnet-antiferromagnet (FM-AFM) and AFM-FM transitions. For certain parameters no transition is possible, however even in this case the exchange interaction has large variations, changing its value by three times with increasing the matrix dielectric constant.
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Submitted 31 January, 2017;
originally announced February 2017.
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Microscopic theory of the Coulomb based exchange coupling in magnetic tunnel junctions
Authors:
O. G. Udalov,
I. S. Beloborodov
Abstract:
We study interlayer exchange coupling (IEC) based on the many-body Coulomb interaction between conduction electrons in magnetic tunnel junction (MTJ). This mechanism complements the known IEC based on virtual electron hopping (or spin currents). We find that these two mechanisms have different behavior on system parameters. The Coulomb based IEC may exceed the hopping based exchange coupling. We s…
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We study interlayer exchange coupling (IEC) based on the many-body Coulomb interaction between conduction electrons in magnetic tunnel junction (MTJ). This mechanism complements the known IEC based on virtual electron hopping (or spin currents). We find that these two mechanisms have different behavior on system parameters. The Coulomb based IEC may exceed the hopping based exchange coupling. We show that the Coulomb based exchange coupling, in contrast to the hopping based coupling, depends strongly on the dielectric constant of the insulating layer. The dependence of the IEC on the dielectric properties of the insulating layer in MTJ is similar to magneto-electric (ME) effect where electric and magnetic degrees of freedom are coupled. We calculate the IEC as a function of temperature and electric field for MTJ with ferroelectric (FE) layer and show that IEC has a sharp decrease in the vicinity of the FE phase transition and varies strongly with external electric field.
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Submitted 6 April, 2017; v1 submitted 1 July, 2016;
originally announced July 2016.
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Influence of the Coulomb interaction on the exchange coupling in granular magnets
Authors:
O. G. Udalov,
I. S. Beloborodov
Abstract:
We develop a theory of the exchange interaction between ferromagnetic (FM) metallic grains embedded into insulating matrix by taking into account the Coulomb blockade effects. For bulk ferromagnets separated by the insulating layer the exchange interaction strongly depends on the height and thickness of the tunneling barrier created by the insulator. We show that for FM grains embedded into insula…
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We develop a theory of the exchange interaction between ferromagnetic (FM) metallic grains embedded into insulating matrix by taking into account the Coulomb blockade effects. For bulk ferromagnets separated by the insulating layer the exchange interaction strongly depends on the height and thickness of the tunneling barrier created by the insulator. We show that for FM grains embedded into insulating matrix the exchange coupling additionally depends on the dielectric properties of this matrix due to the Coulomb blockade effects. In particular, the FM coupling decreases with decreasing the dielectric permittivity of insulating matrix. We find that the change in the exchange interaction due to the Coulomb blockade effects can be a few tens of percent. Also, we study dependence of the intergrain exchange interaction on the grain size and other parameters of the system.
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Submitted 6 April, 2017; v1 submitted 8 June, 2016;
originally announced June 2016.
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Conductance of a SET with a retarded dielectric layer in the gate capacitor
Authors:
O. G. Udalov,
N. M. Chtchelkatchev,
S. A. Fedorov,
I. S. Beloborodov
Abstract:
We study conductance of a single electron transistor (SET) with a ferroelectric (or dielectric) layer placed in the gate capacitor. We assume that ferroelectric (FE) has a retarded response with arbitrary relaxation time. We show that in the case of "fast" but still retarded response of the FE (dielectric) layer an additional contribution to the Coulomb blockade effect appears leading to the suppr…
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We study conductance of a single electron transistor (SET) with a ferroelectric (or dielectric) layer placed in the gate capacitor. We assume that ferroelectric (FE) has a retarded response with arbitrary relaxation time. We show that in the case of "fast" but still retarded response of the FE (dielectric) layer an additional contribution to the Coulomb blockade effect appears leading to the suppression of the SET conductance. We take into account fluctuations of the FE (dielectric) polarization using Monte-Carlo simulations. For "fast" FE these fluctuations partially suppress the additional Coulomb blockade effect. Using Monte-Carlo simulations we study the transition from "fast" to "slow" FE. For high temperatures the peak value of the SET conductance is almost independent of the FE relaxation time. For temperatures close to the FE Curie temperature the conductance peak value non-monotonically depends on the FE relaxation time. A maximum appears when the FE relaxation time is of the order of the SET discharging time. Below the Curie point the conductance peak value decreases with increasing the FE relaxation time. The conductance shows the hysteresis behavior for any FE relaxation time at temperatures below the FE transition point. We show that conductance hysteresis is robust against FE internal fluctuations.
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Submitted 30 November, 2015;
originally announced December 2015.
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Competition of magneto-dipole, anisotropy and exchange interactions in composite multiferroics
Authors:
A. M. Belemuk,
O. G. Udalov,
N. M. Chtchelkatchev,
I. S. Beloborodov
Abstract:
We study the competition of magneto-dipole, anisotropy and exchange interactions in composite three dimensional multiferroics. Using Monte Carlo simulations we show that magneto-dipole interaction does not suppress the ferromagnetic state caused by the interaction of the ferroelectric matrix and magnetic subsystem. However, the presence of magneto-dipole interaction influences the order-disorder t…
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We study the competition of magneto-dipole, anisotropy and exchange interactions in composite three dimensional multiferroics. Using Monte Carlo simulations we show that magneto-dipole interaction does not suppress the ferromagnetic state caused by the interaction of the ferroelectric matrix and magnetic subsystem. However, the presence of magneto-dipole interaction influences the order-disorder transition: depending on the strength of magneto-dipole interaction the transition from the ferromagnetic to the superparamagnetic state is accompanied either by creation of vortices or domains of opposite magnetization. We show that the temperature hysteresis loop occurs due to non-monotonic behavior of exchange interaction versus temperature. The origin of this hysteresis is related to the presence of stable magnetic domains which are robust against thermal fluctuations.
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Submitted 21 May, 2015;
originally announced May 2015.
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Single electron tunneling with "slow" insulators
Authors:
S. A. Fedorov,
N. M. Chtchelkatchev,
O. G. Udalov,
I. S. Beloborodov
Abstract:
Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the "slow" polarization dynamics of the dielectric layers in the tunnel barriers in the fluctuating electric fields induced by single-electron tunneling events and study transport in the single electron trans…
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Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the "slow" polarization dynamics of the dielectric layers in the tunnel barriers in the fluctuating electric fields induced by single-electron tunneling events and study transport in the single electron transistor (SET). Here "slow" dielectric implies slow compared to the characteristic time scales of the SET charging-discharging effects. We show that for strong enough polarizability, such that the induced charge on the island is comparable with the elementary charge, the transport properties of the SET substantially deviate from the known results of transport theory of SET. In particular, the coulomb blockade is more pronounced at finite temperature, the conductance peaks change their shape and the current-voltage characteristics show the memory-effect (hysteresis). However, in contrast to SETs with ferroelectric tunnel junctions, here the periodicity of the conductance in the gate voltage is not broken, instead the period strongly depends on the polarizability of the gate-dielectric. We uncover the fine structure of the hysteresis-effect where the "large" hysteresis loop may include a number of "smaller" loops. Also we predict the memory effect in the current-voltage characteristics $I(V)$, with $I(V)\neq -I(-V)$.
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Submitted 1 January, 2015;
originally announced January 2015.
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Phenomenological theory of magneto-electric coupling in granular multiferroics
Authors:
O. G. Udalov,
N. M. Chtchelkatchev,
I. S. Beloborodov
Abstract:
We study coupling between the ferroelectric polarization and magnetization of granular ferromagnetic film using a phenomenological model of combined multiferroic system consisting of granular ferromagnetic film placed above the ferroelectric (FE) layer. The coupling is due to screening of Coulomb interaction in the granular film by the FE layer. Below the FE Curie temperature the magnetization has…
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We study coupling between the ferroelectric polarization and magnetization of granular ferromagnetic film using a phenomenological model of combined multiferroic system consisting of granular ferromagnetic film placed above the ferroelectric (FE) layer. The coupling is due to screening of Coulomb interaction in the granular film by the FE layer. Below the FE Curie temperature the magnetization has hysteresis as a function of electric field. Below the magnetic ordering temperature the polarization has hysteresis as a function of magnetic field. We study the magneto-electric coupling for weak and strong spatial dispersion of the FE layer. The effect of mutual influence decreases with increasing the spatial dispersion of the FE layer. For weak dispersion the strongest coupling occurs in the vicinity of the ferroelectric-paraelectric phase transition. For strong dispersion the situation is the opposite. We study the magneto-electric coupling as a function of distance between the FE layer and the granular film. For large distances the coupling decays exponentially due to the exponential decrease of electric field produced by the oscillating charges in the granular ferromagnetic film.
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Submitted 23 October, 2014;
originally announced October 2014.
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Memory effect in ferroelectric single electron transistor: violation of conductance periodicity in the gate voltage
Authors:
S. A. Fedorov,
A. E. Korolkov,
N. M. Chtchelkatchev,
O. G. Udalov,
I. S. Beloborodov
Abstract:
The fundamental property of most single-electron devices with quasicontinuous quasiparticle spectrum on the island is the periodicity of their transport characteristics in the gate voltage. This property is robust even with respect to placing the ferroelectric insulators in the source and drain tunnel junctions. We show that placing the ferroelectric inside the gate capacitance breaks this periodi…
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The fundamental property of most single-electron devices with quasicontinuous quasiparticle spectrum on the island is the periodicity of their transport characteristics in the gate voltage. This property is robust even with respect to placing the ferroelectric insulators in the source and drain tunnel junctions. We show that placing the ferroelectric inside the gate capacitance breaks this periodicity. The current-voltage characteristics of this SET strongly depends on the ferroelectric polarization and shows the giant memory-effect even for negligible ferroelectric hysteresis making this device promising for memory applications.
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Submitted 30 October, 2014; v1 submitted 27 August, 2014;
originally announced August 2014.
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Proximity coupling of granular film with ferroelectric substrate and giant electro-resistance effect
Authors:
O. G. Udalov,
N. M. Chtchelkatchev,
I. S. Beloborodov
Abstract:
We study electron transport in granular film placed above the ferroelectric substrate. We show that the conductivity of granular film strongly depends on the ferroelectric state due to screening effects which modify the Coulomb blockade in granular film. In particular, the electric current in granular film is controlled by the direction of ferroelectric polarization. We show that the ferroelectric…
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We study electron transport in granular film placed above the ferroelectric substrate. We show that the conductivity of granular film strongly depends on the ferroelectric state due to screening effects which modify the Coulomb blockade in granular film. In particular, the electric current in granular film is controlled by the direction of ferroelectric polarization. We show that the ferroelectric/granular film system has a large electro-resistance effect. This effect can be utilized in memory and electric field sensor applications.
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Submitted 21 May, 2015; v1 submitted 29 July, 2014;
originally announced July 2014.
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Electric field control of magnetic properties and magneto-transport in composite multiferroics
Authors:
O. G. Udalov,
N. M. Chtchelkatchev,
I. S. Beloborodov
Abstract:
We study magnetic state and electron transport properties of composite multiferroic system consisting of a granular ferromagnetic thin film placed above the ferroelectric substrate. Ferroelectricity and magnetism in this case are coupled by the long-range Coulomb interaction. We show that magnetic state and magneto-transport strongly depend on temperature, external electric field, and electric pol…
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We study magnetic state and electron transport properties of composite multiferroic system consisting of a granular ferromagnetic thin film placed above the ferroelectric substrate. Ferroelectricity and magnetism in this case are coupled by the long-range Coulomb interaction. We show that magnetic state and magneto-transport strongly depend on temperature, external electric field, and electric polarization of the substrate. Ferromagnetic order exists at finite temperature range around ferroelectric Curie point. Outside the region the film is in the superparamagnetic state. We demonstrate that magnetic phase transition can be driven by an electric field and magneto-resistance effect has two maxima associated with two magnetic phase transitions appearing in the vicinity of the ferroelectric phase transition. We show that positions of these maxima can be shifted by the external electric field and that the magnitude of the magneto-resistance effect depends on the mutual orientation of external electric field and polarization of the substrate.
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Submitted 21 May, 2015; v1 submitted 26 April, 2014;
originally announced April 2014.
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Interplay of ferroelectricity and single electron tunneling
Authors:
S. A. Fedorov,
A. E. Korolkov,
N. M. Chtchelkatchev,
O. G. Udalov,
I. S. Beloborodov
Abstract:
We investigate the interplay of ferroelectricity and quantum electron transport at the nanoscale in the regime of Coulomb blockade. Ferroelectric polarization in this case is no longer the external parameter but should be self-consistently calculated along with electron hopping probabilities leading to new physical transport phenomena studying in this paper. These phenomena appear mostly due to ef…
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We investigate the interplay of ferroelectricity and quantum electron transport at the nanoscale in the regime of Coulomb blockade. Ferroelectric polarization in this case is no longer the external parameter but should be self-consistently calculated along with electron hopping probabilities leading to new physical transport phenomena studying in this paper. These phenomena appear mostly due to effective screening of a grain electric field by ferroelectric environment rather than due to polarization dependent tunneling probabilities. At small bias voltages polarization can be switched by a single excess electron in the grain. In this case transport properties of SET exhibit the instability (memory effect).
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Submitted 29 March, 2014;
originally announced March 2014.
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Coupling of (ferro)electricity and magnetism through Coulomb blockade in Composite Multiferroics
Authors:
O. G. Udalov,
N. M. Chtchelkatchev,
I. S. Beloborodov
Abstract:
Composite multiferroics are materials exhibiting the interplay of ferroelectricity, magnetism, and strong electron correlations. Typical example --- magnetic nano grains embedded in a ferroelectric matrix. Coupling of ferroelectric and ferromagnetic degrees of freedom in these materials is due to the influence of ferroelectric matrix on the exchange coupling constant via screening of the intragrai…
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Composite multiferroics are materials exhibiting the interplay of ferroelectricity, magnetism, and strong electron correlations. Typical example --- magnetic nano grains embedded in a ferroelectric matrix. Coupling of ferroelectric and ferromagnetic degrees of freedom in these materials is due to the influence of ferroelectric matrix on the exchange coupling constant via screening of the intragrain and intergrain Coulomb interaction. Cooling typical magnetic materials the ordered state appears at lower temperatures than the disordered state. We show that in composite multiferroics the ordered magnetic phase may appear at higher temperatures than the magnetically disordered phase. In non-magnetic materials such a behavior is known as inverse phase transition.
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Submitted 21 May, 2015; v1 submitted 14 February, 2014;
originally announced February 2014.
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Interplay of Coulomb Blockade and Ferroelectricity in Nano-Granular Materials
Authors:
O. G. Udalov,
N. M. Chtchelkatchev,
A. Glatz,
I. S. Beloborodov
Abstract:
We study electron transport properties of composite ferroelectrics --- materials consisting of metallic grains embedded in a ferroelectric matrix. In particular, we calculate the conductivity in a wide range of temperatures and electric fields, showing pronounced hysteretic behavior. In weak fields, electron cotunneling is the main transport mechanism. In this case, we show that the ferroelectric…
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We study electron transport properties of composite ferroelectrics --- materials consisting of metallic grains embedded in a ferroelectric matrix. In particular, we calculate the conductivity in a wide range of temperatures and electric fields, showing pronounced hysteretic behavior. In weak fields, electron cotunneling is the main transport mechanism. In this case, we show that the ferroelectric matrix strongly influences the transport properties through two effects: i) the dependence of the Coulomb gap on the dielectric permittivity of the ferroelectric matrix, which in turn is controlled by temperature and external field; and ii) the dependence of the tunneling matrix elements on the electric polarization of the ferroelectric matrix, which can be tuned by temperature and applied electric field as well. In the case of strong electric fields, the Coulomb gap is suppressed and only the second mechanism is important. Our results are important for i) thermometers for precise temperature measurements and ii) ferrroelectric memristors.
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Submitted 10 February, 2014; v1 submitted 21 January, 2014;
originally announced January 2014.
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Electron Transport Properties of Composite Ferroelectrics
Authors:
O. G. Udalov,
A. Glatz,
I. S. Beloborodov
Abstract:
We study electron transport in composite ferroelectrics --- materials consisting of metallic grains embedded in a ferroelectric matrix. Due to its complex tunable morphology the thermodynamic properties of these materials can be essentially different from bulk or thin-film ferroelectrics. We calculate the conductivity of composite ferroelectrics by taking into account the interplay between charge…
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We study electron transport in composite ferroelectrics --- materials consisting of metallic grains embedded in a ferroelectric matrix. Due to its complex tunable morphology the thermodynamic properties of these materials can be essentially different from bulk or thin-film ferroelectrics. We calculate the conductivity of composite ferroelectrics by taking into account the interplay between charge localization, multiple grain boundaries, strong Coulomb repulsion, and ferroelectric order parameter. We show that the ferroelectricity plays a crucial role on the temperature behavior of the conductivity in the vicinity of the ferroelectric-paraelectric transition.
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Submitted 27 December, 2013; v1 submitted 21 November, 2013;
originally announced November 2013.
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Universality and quantization of the power to heat ratio in nano-granular systems
Authors:
N. M. Chtchelkatchev,
A. Glatz,
I. S. Beloborodov
Abstract:
We study heating and dissipation effects in granular nanosystems in the regime of weak coupling between the grains. We focus on the cotunneling regime and solve the heat-dissipation problem in an array of grains exactly. We show that the power to heat ratio has a universal quantized value, which is geometrically protected: it depends only on the number of grains.
We study heating and dissipation effects in granular nanosystems in the regime of weak coupling between the grains. We focus on the cotunneling regime and solve the heat-dissipation problem in an array of grains exactly. We show that the power to heat ratio has a universal quantized value, which is geometrically protected: it depends only on the number of grains.
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Submitted 25 September, 2013; v1 submitted 23 July, 2013;
originally announced July 2013.
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Interplay of charge and heat transport in a nano-junction in the out-of-equilibrium cotunneling regime
Authors:
N. M. Chtchelkatchev,
A. Glatz,
I. S. Beloborodov
Abstract:
We study the charge transport and the heat transfer through a nano-junction composed of a small metallic grain weakly coupled to two metallic leads. We focus on the cotunneling regime out-of-equilibrium, where the bias voltage and the temperature gradient between the leads strongly drive electron and phonon degrees of freedom in the grain that in turn have a strong feedback on the transport throug…
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We study the charge transport and the heat transfer through a nano-junction composed of a small metallic grain weakly coupled to two metallic leads. We focus on the cotunneling regime out-of-equilibrium, where the bias voltage and the temperature gradient between the leads strongly drive electron and phonon degrees of freedom in the grain that in turn have a strong feedback on the transport through the grain. We derive and solve coupled kinetic equations for electron and phonon degrees of freedom in the grain. We obtain the heat fluxes between cotunneling electrons, bosonic electron-hole excitations in the grain, and phonons, and self-consistently find the current-voltage characteristics. We demonstrate that the transport in the nano-junction is very sensitive to the spectrum of the bosonic modes in the grain.
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Submitted 23 October, 2012;
originally announced October 2012.
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Transport characteristics of nanojunctions far-from-equilibrium
Authors:
A. Glatz,
N. M. Chtchelkatchev,
I. S. Beloborodov
Abstract:
We study the tunneling transport through a nanojunction in the far-from-equilibrium regime at relatively low temperatures. We show that the current-voltage characteristics is significantly modified as compared to the usual quasi-equilibrium result by lifting the suppression due to the Coulomb blockade. These effects are important in realistic nanojunctions. We study the high-impedance case in deta…
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We study the tunneling transport through a nanojunction in the far-from-equilibrium regime at relatively low temperatures. We show that the current-voltage characteristics is significantly modified as compared to the usual quasi-equilibrium result by lifting the suppression due to the Coulomb blockade. These effects are important in realistic nanojunctions. We study the high-impedance case in detail to explain the underlying physics and construct a more realistic theoretical model for the case of a metallic junction taking into account dynamic Coulomb interaction. This dynamic screening further reduces the effect of the Coulomb blockade.
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Submitted 23 April, 2012;
originally announced April 2012.
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Defect states and disorder in charge transport in semiconductor nanowires
Authors:
Dongkyun Ko,
X. W. Zhao,
Kongara M. Reddy,
O. D. Restrepo,
R. Mishra,
I. S. Beloborodov,
Nandini Trivedi,
Nitin P. Padture,
W. Windl,
F. Y. Yang,
E. Johnston-Halperin
Abstract:
We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage transport is well described by the space charge limited current model and Efros-Shklovskii variable range hopping, but positive gate voltage (electron accumulation) reveals a previously unexplored regime of nanowire charge transport that is not we…
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We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage transport is well described by the space charge limited current model and Efros-Shklovskii variable range hopping, but positive gate voltage (electron accumulation) reveals a previously unexplored regime of nanowire charge transport that is not well described by existing theory. The ability to continuously tune between these regimes provides guidance for the extension of existing models and directly informs the design of next-generation nanoscale electronic devices.
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Submitted 22 June, 2011;
originally announced June 2011.
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Giant Quantum Freezing of Tunnel Junctions mediated by Environments
Authors:
A. Glatz,
N. M. Chtchelkachev,
I. S. Beloborodov,
V. Vinokur
Abstract:
We investigate the quantum heat exchange between a nanojunction and a many-body or electromagnetic environment far from equilibrium. It is shown that the two-temperature energy emission-absorption mechanism gives rise to a giant heat flow between the junction and the environment. We obtain analytical results for the heat flow in an idealized high impedance environment and perform numerical calcula…
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We investigate the quantum heat exchange between a nanojunction and a many-body or electromagnetic environment far from equilibrium. It is shown that the two-temperature energy emission-absorption mechanism gives rise to a giant heat flow between the junction and the environment. We obtain analytical results for the heat flow in an idealized high impedance environment and perform numerical calculations for the general case of interacting electrons and discuss the giant freezing and heating effects in the junction under typical experimental conditions.
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Submitted 21 June, 2011;
originally announced June 2011.
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Frequency dependent polarizability of small metallic grains
Authors:
A. A. Zharov,
I. S. Beloborodov
Abstract:
We study the dynamic electronic polarizability of a single nano-scale spherical metallic grain using quantum mechanical approach. We introduce the model for interacting electrons bound in the grain allowing us numerically to calculate the frequency dependence of the polarizability of grains of different sizes. We show that within this model the main resonance peak corresponding to the surface plas…
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We study the dynamic electronic polarizability of a single nano-scale spherical metallic grain using quantum mechanical approach. We introduce the model for interacting electrons bound in the grain allowing us numerically to calculate the frequency dependence of the polarizability of grains of different sizes. We show that within this model the main resonance peak corresponding to the surface plasmon mode is blue-shifted and some minor secondary resonances above and below the main peak exist. We study the behavior of blue shift as a function of grain size and compare our findings with the classical polarizability and with other results in the literature.
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Submitted 19 May, 2011; v1 submitted 20 August, 2010;
originally announced August 2010.
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Heating Effects in a Chain of Quantum Dots
Authors:
A. Glatz,
I. S. Beloborodov,
N. M. Chtchelkatchev,
V. M. Vinokur
Abstract:
We study heating effects in a chain of weakly coupled grains due to electron-hole pair creation. The main mechanism for the latter at low temperatures is due to inelastic electron cotunneling processes in the array. We develop a quantitative kinetic theory for these systems and calculate the array temperature profile as a function of grain parameters, bias voltage or current, and time and show tha…
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We study heating effects in a chain of weakly coupled grains due to electron-hole pair creation. The main mechanism for the latter at low temperatures is due to inelastic electron cotunneling processes in the array. We develop a quantitative kinetic theory for these systems and calculate the array temperature profile as a function of grain parameters, bias voltage or current, and time and show that for nanoscale size grains the heating effects are pronounced and easily measurable in experiments. In the low- and high-voltage limits we solve the stationary heat-flux equation analytically. We demonstrate the over-heating hysteresis in the large-current or voltage regimes. In addition we consider the influence of a substrate on the system which acts as a heat sink. We show that nano dot chains can be used as highly sensitive thermometers over a broad range of temperatures.
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Submitted 27 May, 2010;
originally announced May 2010.
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Single grain heating due to inelastic cotunneling
Authors:
Andreas Glatz,
I. S. Beloborodov
Abstract:
We study heating effects of a single metallic quantum dot weakly coupled to two leads. The dominant mechanism for heating at low temperatures is due to inelastic electron cotunneling processes. We calculate the grain temperature profile as a function of grain parameters, bias voltage, and time and show that for nanoscale size grains the heating effects are pronounced and easily measurable in exp…
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We study heating effects of a single metallic quantum dot weakly coupled to two leads. The dominant mechanism for heating at low temperatures is due to inelastic electron cotunneling processes. We calculate the grain temperature profile as a function of grain parameters, bias voltage, and time and show that for nanoscale size grains the heating effects are pronounced and easily measurable in experiments.
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Submitted 7 November, 2009; v1 submitted 30 October, 2009;
originally announced November 2009.
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Thermoelectric performance of weakly coupled granular materials
Authors:
A. Glatz,
I. S. Beloborodov
Abstract:
We study thermoelectric properties of inhomogeneous nanogranular materials for weak tunneling conductance between the grains, g_t < 1. We calculate the thermopower and figure of merit taking into account the shift of the chemical potential and the asymmetry of the density of states in the vicinity of the Fermi surface. We show that the weak coupling between the grains leads to a high thermopower…
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We study thermoelectric properties of inhomogeneous nanogranular materials for weak tunneling conductance between the grains, g_t < 1. We calculate the thermopower and figure of merit taking into account the shift of the chemical potential and the asymmetry of the density of states in the vicinity of the Fermi surface. We show that the weak coupling between the grains leads to a high thermopower and low thermal conductivity resulting in relatively high values of the figure of merit on the order of one. We estimate the temperature at which the figure of merit has its maximum value for two- and three-dimensional samples. Our results are applicable for many emerging materials, including artificially self-assembled nanoparticle arrays.
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Submitted 15 October, 2009;
originally announced October 2009.
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Thermoelectric performance of granular semiconductors
Authors:
Andreas Glatz,
I. S. Beloborodov
Abstract:
We study thermoelectric properties of granular semiconductors with weak tunneling conductance between the grains, g_t < 1. We calculate the thermopower and figure of merit taking into account the shift of the chemical potential and the asymmetry of the density of states in the vicinity of the Fermi surface due to n- or p-type doping in the Efros-Shklovskii regime for temperatures less than the c…
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We study thermoelectric properties of granular semiconductors with weak tunneling conductance between the grains, g_t < 1. We calculate the thermopower and figure of merit taking into account the shift of the chemical potential and the asymmetry of the density of states in the vicinity of the Fermi surface due to n- or p-type doping in the Efros-Shklovskii regime for temperatures less than the charging energy. We show that for weakly coupled semiconducting grains the figure of merit is optimized for grain sizes of order 5nm for typical materials and its values can be larger than one. We also study the case of compensated granular semiconductors and show that in this case the thermopower can be still finite, although two to three orders of magnitude smaller than in the uncompensated regime.
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Submitted 2 July, 2009;
originally announced July 2009.
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Thermoelectric and Seebeck coefficients of granular metals
Authors:
Andreas Glatz,
I. S. Beloborodov
Abstract:
In this work we present a detailed study and derivation of the thermopower and thermoelectric coefficient of nano-granular metals at large tunneling conductance between the grains, g_T>> 1. An important criterion for the performance of a thermoelectric device is the thermodynamic figure of merit which is derived using the kinetic coefficients of granular metals. All results are valid at intermed…
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In this work we present a detailed study and derivation of the thermopower and thermoelectric coefficient of nano-granular metals at large tunneling conductance between the grains, g_T>> 1. An important criterion for the performance of a thermoelectric device is the thermodynamic figure of merit which is derived using the kinetic coefficients of granular metals. All results are valid at intermediate temperatures, E_c>>T/g_T>δ, where δis the mean energy level spacing for a single grain and E_c its charging energy. We show that the electron-electron interaction leads to an increase of the thermopower with decreasing grain size and discuss our results in the light of future generation thermoelectric materials for low temperature applications. The behavior of the figure of merit depending on system parameters like grain size, tunneling conductance, and temperature is presented.
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Submitted 14 February, 2009;
originally announced February 2009.
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Nanogranular Thermoelectrics
Authors:
Andreas Glatz,
I. S. Beloborodov
Abstract:
We investigate thermopower and thermoelectric coefficient of nano-granular materials at large tunneling conductance between the grains, g_{T} >> 1. We show that at intermediate temperatures, T >= g_{T}δ, where δis the mean energy level spacing for a single grain, electron-electron interaction leads to an increase of the thermopower with decreasing grain size. We discuss our results in the light…
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We investigate thermopower and thermoelectric coefficient of nano-granular materials at large tunneling conductance between the grains, g_{T} >> 1. We show that at intermediate temperatures, T >= g_{T}δ, where δis the mean energy level spacing for a single grain, electron-electron interaction leads to an increase of the thermopower with decreasing grain size. We discuss our results in the light of new types of thermoelectric materials and present the behavior of the figure of merit depending on system parameters.
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Submitted 30 October, 2008;
originally announced October 2008.
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Sequential tunneling and inelastic cotunneling in nanoparticle arrays
Authors:
T. B. Tran,
I. S. Beloborodov,
Jingshi Hu,
X. M. Lin,
T. F. Rosenbaum,
H. M. Jaeger
Abstract:
We investigate transport in weakly-coupled metal nanoparticle arrays, focusing on the regime where tunneling is competing with strong single electron charging effects. This competition gives rise to an interplay between two types of charge transport. In sequential tunneling, transport is dominated by independent electron hops from a particle to its nearest neighbor along the current path. In ine…
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We investigate transport in weakly-coupled metal nanoparticle arrays, focusing on the regime where tunneling is competing with strong single electron charging effects. This competition gives rise to an interplay between two types of charge transport. In sequential tunneling, transport is dominated by independent electron hops from a particle to its nearest neighbor along the current path. In inelastic cotunneling, transport is dominated by cooperative, multi-electron hops that each go to the nearest neighbor but are synchronized to move charge over distances of several particles. In order to test how the temperature-dependent cotunnel distance affects the current-voltage ($I-V$) characteristics we perform a series of systematic experiments on highly-ordered, close-packed nanoparticle arrays. The arrays consist of $\sim 5.5$nm diameter gold nanocrystals with tight size dispersion, spaced $\sim 1.7$nm apart by interdigitating shells of dodecanethiol ligands. We present $I-V$ data for mono-, bi-, tri- and tetralayer arrays. For stacks 2-4 layers thick we compare in-plane measurements with data for vertical transport, perpendicular to the array plane. Our results support a picture whereby transport inside the Coulomb blockade regime occurs by inelastic cotunneling, while sequential tunneling takes over at large bias above the global Coulomb blockade threshold $V_t(T)$, and at high temperatures.
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Submitted 29 May, 2008; v1 submitted 22 May, 2008;
originally announced May 2008.
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Giant Magnetoresistance in Nanogranular Magnets
Authors:
A. Glatz,
I. S. Beloborodov,
V. M. Vinokur
Abstract:
We study the giant magnetoresistance of nanogranular magnets in the presence of an external magnetic field and finite temperature. We show that the magnetization of arrays of nanogranular magnets has hysteretic behaviour at low temperatures leading to a double peak in the magnetoresistance which coalesces at high temperatures into a single peak. We numerically calculate the magnetization of magn…
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We study the giant magnetoresistance of nanogranular magnets in the presence of an external magnetic field and finite temperature. We show that the magnetization of arrays of nanogranular magnets has hysteretic behaviour at low temperatures leading to a double peak in the magnetoresistance which coalesces at high temperatures into a single peak. We numerically calculate the magnetization of magnetic domains and the motion of domain walls in this system using a combined mean-field approach and a model for an elastic membrane moving in a random medium, respectively. From the obtained results, we calculate the electric resistivity as a function of magnetic field and temperature. Our findings show excellent agreement with various experimental data.
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Submitted 20 May, 2008; v1 submitted 3 October, 2007;
originally announced October 2007.
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Single-electron latch with granular film charge leakage suppressor
Authors:
Alexei O. Orlov,
Xiangning Luo,
Kameshwar K. Yadavalli,
Igor S. Beloborodov,
Gregory L. Snider
Abstract:
A single-electron latch is a device that can be used as a building block for Quantum-dot Cellular Automata (QCA) circuits. It consists of three nanoscale metal "dots" connected in series by tunnel junctions; charging of the dots is controlled by three electrostatic gates. One very important feature of a single-electron latch is its ability to store ("latch") information represented by the locati…
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A single-electron latch is a device that can be used as a building block for Quantum-dot Cellular Automata (QCA) circuits. It consists of three nanoscale metal "dots" connected in series by tunnel junctions; charging of the dots is controlled by three electrostatic gates. One very important feature of a single-electron latch is its ability to store ("latch") information represented by the location of a single electron within the three dots. To obtain latching, the undesired leakage of charge during the retention time must be suppressed. Previously, to achieve this goal, multiple tunnel junctions were used to connect the three dots. However, this method of charge leakage suppression requires an additional compensation of the background charges affecting each parasitic dot in the array of junctions. We report a single-electron latch where a granular metal film is used to fabricate the middle dot in the latch which concurrently acts as a charge leakage suppressor. This latch has no parasitic dots, therefore the background charge compensation procedure is greatly simplified. We discuss the origins of charge leakage suppression and possible applications of granular metal dots for various single-electron circuits.
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Submitted 25 September, 2007;
originally announced September 2007.
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Characteristic Energy of the Coulomb Interactions and the Pileup of States
Authors:
Daniel Mazur,
K. E. Gray,
J. F. Zasadzinski,
L. Ozyuzer,
I. S. Beloborodov,
H. Zheng,
J. F. Mitchell
Abstract:
Tunneling data on $\mathrm{La_{1.28}Sr_{1.72}Mn_2O_7}$ crystals confirm Coulomb interaction effects through the $\sqrt{\mathrm{E}}$ dependence of the density of states. Importantly, the data and analysis at high energy, E, show a pileup of states: most of the states removed from near the Fermi level are found between ~40 and 130 meV, from which we infer the possibility of universal behavior. The…
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Tunneling data on $\mathrm{La_{1.28}Sr_{1.72}Mn_2O_7}$ crystals confirm Coulomb interaction effects through the $\sqrt{\mathrm{E}}$ dependence of the density of states. Importantly, the data and analysis at high energy, E, show a pileup of states: most of the states removed from near the Fermi level are found between ~40 and 130 meV, from which we infer the possibility of universal behavior. The agreement of our tunneling data with recent photoemission results further confirms our analysis.
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Submitted 7 August, 2007;
originally announced August 2007.
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Electron Transport in Nanogranular Ferromagnets
Authors:
I. S. Beloborodov,
A. Glatz,
V. M. Vinokur
Abstract:
We study electronic transport properties of ferromagnetic nanoparticle arrays and nanodomain materials near the Curie temperature in the limit of weak coupling between the grains. We calculate the conductivity in the Ohmic and non-Ohmic regimes and estimate the magnetoresistance jump in the resistivity at the transition temperature. The results are applicable for many emerging materials, includi…
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We study electronic transport properties of ferromagnetic nanoparticle arrays and nanodomain materials near the Curie temperature in the limit of weak coupling between the grains. We calculate the conductivity in the Ohmic and non-Ohmic regimes and estimate the magnetoresistance jump in the resistivity at the transition temperature. The results are applicable for many emerging materials, including artificially self-assembled nanoparticle arrays and a certain class of manganites, where localization effects within the clusters can be neglected.
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Submitted 13 August, 2007; v1 submitted 9 April, 2007;
originally announced April 2007.
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Resistance Anomaly in Disordered Superconducting Films
Authors:
J. Hua,
Z. L. Xiao,
D. Rosenmann,
I. S. Beloborodov,
U. Welp,
W. K. Kwok,
G. W. Crabtree
Abstract:
We report on a resistance anomaly in disordered superconducting films containing arrays of irregularly distributed nanoscale holes. At high driving currents, peaks appear in the resistance as a function of temperature, with peak values up to 2% above the classic normal-state resistance. We attribute the observed resistance anomaly to dissipation-induced granularity which enhances the contributio…
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We report on a resistance anomaly in disordered superconducting films containing arrays of irregularly distributed nanoscale holes. At high driving currents, peaks appear in the resistance as a function of temperature, with peak values up to 2% above the classic normal-state resistance. We attribute the observed resistance anomaly to dissipation-induced granularity which enhances the contributions from fluctuation-induced reduction of the density of states of the quasiparticles. The granular feature of a disordered superconducting film originates from the inhomogeneous temperature distribution caused by the variation of the local dissipation and/or heat transfer.
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Submitted 19 January, 2007;
originally announced January 2007.
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Transport properties of n-type ultrananocrystalline diamond films
Authors:
I. S. Beloborodov,
P. Zapol,
D. M. Gruen,
L. A. Curtiss
Abstract:
We investigate transport properties of ultrananocrystalline diamond films for a broad range of temperatures. Addition of nitrogen during plasma-assisted growth increases the conductivity of ultrananocrystalline diamond films by several orders of magnitude. We show that films produced at low concentration of nitrogen in the plasma are very resistive and electron transport occurs via a variable ra…
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We investigate transport properties of ultrananocrystalline diamond films for a broad range of temperatures. Addition of nitrogen during plasma-assisted growth increases the conductivity of ultrananocrystalline diamond films by several orders of magnitude. We show that films produced at low concentration of nitrogen in the plasma are very resistive and electron transport occurs via a variable range hopping mechanism while in films produced at high nitrogen concentration the electron states become delocalized and the transport properties of ultrananocrystalline diamond films can be described using the Boltzmann formalism. We discuss the critical concentration of carriers at which the metal to insulator transition in ultrananocrystalline diamond films occurs and compare our results with available experimental data.
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Submitted 26 December, 2006;
originally announced December 2006.
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Transport properties of semiconducting nanocrystal arrays at low temperatures
Authors:
I. S. Beloborodov,
A. Glatz,
V. M. Vinokur
Abstract:
We study the electron transport in semiconducting nanocrystal arrays at temperatures $T\ll E_c$, where $E_c$ is the charging energy for a single grain. In this temperature range the electron transport is dominated by co-tunneling processes. We discuss both elastic and inelastic co-tunneling and show that for semiconducting nanocrystal arrays the inelastic contribution is strongly suppressed at l…
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We study the electron transport in semiconducting nanocrystal arrays at temperatures $T\ll E_c$, where $E_c$ is the charging energy for a single grain. In this temperature range the electron transport is dominated by co-tunneling processes. We discuss both elastic and inelastic co-tunneling and show that for semiconducting nanocrystal arrays the inelastic contribution is strongly suppressed at low temperatures. We also compare our results with available experimental data.
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Submitted 9 February, 2007; v1 submitted 4 August, 2006;
originally announced August 2006.
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Granular Electronic Systems
Authors:
I. S. Beloborodov,
K. B. Efetov,
A. V. Lopatin,
V. M. Vinokur
Abstract:
A granular metal is an array of metallic nano-particles imbedded into an insulating matrix. Tuning the intergranular coupling strength a granular system can be transformed into either a good metal or an insulator and, in case of superconducting particles, experience superconductor-insulator transition. The ease of adjusting electronic properties of granular metals makes them most suitable for fu…
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A granular metal is an array of metallic nano-particles imbedded into an insulating matrix. Tuning the intergranular coupling strength a granular system can be transformed into either a good metal or an insulator and, in case of superconducting particles, experience superconductor-insulator transition. The ease of adjusting electronic properties of granular metals makes them most suitable for fundamental studies of disordered solids and assures them a fundamental role for nanotechnological applications. This Review discusses recent important theoretical advances in the study of granular metals, emphasizing on the interplay of disorder, quantum effects, fluctuations and effects of confinement in formation of electronic transport and thermodynamic properties of granular materials.
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Submitted 20 March, 2006;
originally announced March 2006.
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Insulating state of granular superconductors in a strong-coupling regime
Authors:
I. S. Beloborodov,
Ya. V. Fominov,
A. V. Lopatin,
V. M. Vinokur
Abstract:
We analyze the possibility of the formation of a magnetic-field-induced insulating state in a two-dimensional granular superconductor with relatively strong intergranular coupling and show that such a state appears in a model with spatial variations of the single-grain critical magnetic field. This model describes realistic granular samples with the dispersion in grain sizes and explains the mec…
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We analyze the possibility of the formation of a magnetic-field-induced insulating state in a two-dimensional granular superconductor with relatively strong intergranular coupling and show that such a state appears in a model with spatial variations of the single-grain critical magnetic field. This model describes realistic granular samples with the dispersion in grain sizes and explains the mechanism leading to a giant peak in the magnetoresistance.
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Submitted 12 July, 2006; v1 submitted 14 September, 2005;
originally announced September 2005.
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Multiple Cotunneling in Large Quantum Dot Arrays
Authors:
T. B. Tran,
I. S. Beloborodov,
X. M. Lin,
V. M. Vinokur,
H. M. Jaeger
Abstract:
We investigate the effects of inelastic cotunneling on the electronic transport properties of gold nanoparticle multilayers and thick films at low applied bias, inside the Coulomb blockade regime. We find that the zero-bias conductance, $g_0(T)$, in all systems exhibits Efros-Shklovskii-type variable range hopping transport. The resulting typical hopping distance, corresponding to the number of…
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We investigate the effects of inelastic cotunneling on the electronic transport properties of gold nanoparticle multilayers and thick films at low applied bias, inside the Coulomb blockade regime. We find that the zero-bias conductance, $g_0(T)$, in all systems exhibits Efros-Shklovskii-type variable range hopping transport. The resulting typical hopping distance, corresponding to the number of tunnel junctions participating in cotunneling events, is shown to be directly related to the power law exponent in the measured current-voltage characteristics. We discuss the implications of these findings in light of models on cotunneling and hopping transport in mesoscopic, granular conductors.
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Submitted 25 June, 2005; v1 submitted 5 May, 2005;
originally announced May 2005.
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Coulomb effects and hopping transport in granular metals
Authors:
I. S. Beloborodov,
A. V. Lopatin,
V. M. Vinokur
Abstract:
We investigate effects of Coulomb interaction and hopping transport in the insulator phase of granular metals and quantum dot arrays. We consider a spatially periodic as well as an irregular array, including disorder in a form of a random on-site electrostatic potential. We study the Mott transition between the insulating and metallic states in the regular system and find the dependence of the M…
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We investigate effects of Coulomb interaction and hopping transport in the insulator phase of granular metals and quantum dot arrays. We consider a spatially periodic as well as an irregular array, including disorder in a form of a random on-site electrostatic potential. We study the Mott transition between the insulating and metallic states in the regular system and find the dependence of the Mott gap upon the intergranular coupling. The conductivity of a strictly periodic array has an activation form with the Mott gap as an activation energy. Considering irregular systems we concentrate on the transport properties in the dielectric, low coupling limit and derive the Efros-Shklovskii law for hopping conductivity. In the irregular arrays electrostatic disorder results in the finite density of states on the Fermi level giving rise to the variable range hopping mechanism. We develop a theory of tunneling through a chain of grains and discuss in detail both elastic and inelastic cotunneling mechanisms; the former dominates at very low temperatures and/or very low applied electric fields, while the inelastic mechanism controls tunneling at high temperature/fields. Our results are obtained within the framework of the new technique based on the mapping of quantum electronic problem onto the classical gas of Coulomb charges. The processes of quantum tunnelling of real electrons are represented in this technique as trajectories (world lines) of charged classical particles in $d+1$ dimensions. The Mott gap is related to the dielectric susceptibility of the Coulomb gas in the direction of the imaginary time axis.
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Submitted 6 April, 2005;
originally announced April 2005.
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Effective description of hopping transport in granular metals
Authors:
I. S. Beloborodov,
A. V. Lopatin,
V. M. Vinokur,
V. I. Kozub
Abstract:
We develop a theory of a variable range hopping transport in granular conductors based on the sequential electron tunnelling through many grains in the presence of the strong Coulomb interaction. The processes of quantum tunnelling of real electrons are represented as trajectories (world lines) of charged classical particles in d+1 dimensions. We apply the developed technique to investigate the…
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We develop a theory of a variable range hopping transport in granular conductors based on the sequential electron tunnelling through many grains in the presence of the strong Coulomb interaction. The processes of quantum tunnelling of real electrons are represented as trajectories (world lines) of charged classical particles in d+1 dimensions. We apply the developed technique to investigate the hopping conductivity of granular systems in the regime of small tunneling conductances between the grains g << 1.
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Submitted 5 January, 2005;
originally announced January 2005.
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Effects of fluctuations and Coulomb interaction on the transition temperature of granular superconductors
Authors:
I. S. Beloborodov,
K. B. Efetov,
A. V. Lopatin,
V. M. Vinokur
Abstract:
We investigate the suppression of superconducting transition temperature in granular metallic systems due to (i) fluctuations of the order parameter (bosonic mechanism) and (ii) Coulomb repulsion (fermionic mechanism) assuming large tunneling conductance between the grains $g_{T}\gg 1$. We find the correction to the superconducting transition temperature for 3$d$ granular samples and films. We d…
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We investigate the suppression of superconducting transition temperature in granular metallic systems due to (i) fluctuations of the order parameter (bosonic mechanism) and (ii) Coulomb repulsion (fermionic mechanism) assuming large tunneling conductance between the grains $g_{T}\gg 1$. We find the correction to the superconducting transition temperature for 3$d$ granular samples and films. We demonstrate that if the critical temperature $T_c > g_T δ$, where $δ$ is the mean level spacing in a single grain the bosonic mechanism is the dominant mechanism of the superconductivity suppression, while for critical temperatures $T_c < g_T δ$ the suppression of superconductivity is due to the fermionic mechanism.
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Submitted 20 November, 2004; v1 submitted 2 September, 2004;
originally announced September 2004.
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Universal Description of Granular Metals at Low Temperatures: Granular Fermi Liquid
Authors:
I. S. Beloborodov,
A. V. Lopatin,
V. M. Vinokur
Abstract:
We present a unified description of the low temperature phase of granular metals that reveals a striking generality of the low temperature behaviors. Our model explains the universality of the low-temperature conductivity that coincides exactly with that of the homogeneously disordered systems and enables a straightforward derivation of low temperature characteristics of disordered conductors.
We present a unified description of the low temperature phase of granular metals that reveals a striking generality of the low temperature behaviors. Our model explains the universality of the low-temperature conductivity that coincides exactly with that of the homogeneously disordered systems and enables a straightforward derivation of low temperature characteristics of disordered conductors.
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Submitted 13 May, 2004;
originally announced May 2004.
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Low temperature transport in granular metals
Authors:
I. S. Beloborodov,
K. B. Efetov,
A. V. Lopatin,
V. M. Vinokur
Abstract:
We investigate transport in a granular metallic system at large tunneling conductance between the grains. We show that at low temperatures, $T\leq g_Tδ$, where $δ$ is the single mean energy level spacing in a grain, the coherent electron motion at large distances dominates the physics, contrary to the high temperature ($T > g_T δ$) behavior where conductivity is controlled by the scales of the o…
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We investigate transport in a granular metallic system at large tunneling conductance between the grains. We show that at low temperatures, $T\leq g_Tδ$, where $δ$ is the single mean energy level spacing in a grain, the coherent electron motion at large distances dominates the physics, contrary to the high temperature ($T > g_T δ$) behavior where conductivity is controlled by the scales of the order of the grain size. The conductivity of one and two dimensional granular metals, in the low temperature regime, decays with decreasing temperature in the same manner as that in homogeneous disordered metals, indicating thus an insulating behavior. However, even in this temperature regime the granular structure remains important and there is an additional contribution to conductivity coming from short distances. Due to this contribution the metal-insulator transition in three dimensions occurs at the value of tunnel conductance $g_T^C=(1/6π)\ln (E_C/δ)$, where $E_C$ is the charging energy of an isolated grain, and not at the generally expected $g_T^C \propto 1$. Corrections to the density of states of granular metals due to the electron-electron interaction are calculated. Our results compare favorably with the logarithmic dependence of resistivity in the high-$T_c$ cuprate superconductors indicating that these materials may have a granular structure.
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Submitted 25 June, 2004; v1 submitted 19 April, 2004;
originally announced April 2004.
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Thermal transport in granular metals
Authors:
I. S. Beloborodov,
A. V. Lopatin,
F. W. J. Hekking,
Rosario Fazio,
V. M. Vinokur
Abstract:
We study the electron thermal transport in granular metals at large tunnel conductance between the grains, $g_T \gg 1$ and not too low a temperature $T > g_Tδ$, where $δ$ is the mean energy level spacing for a single grain. Taking into account the electron-electron interaction effects we calculate the thermal conductivity and show that the Wiedemann-Franz law is violated for granular metals. We…
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We study the electron thermal transport in granular metals at large tunnel conductance between the grains, $g_T \gg 1$ and not too low a temperature $T > g_Tδ$, where $δ$ is the mean energy level spacing for a single grain. Taking into account the electron-electron interaction effects we calculate the thermal conductivity and show that the Wiedemann-Franz law is violated for granular metals. We find that interaction effects suppress the thermal conductivity less than the electrical conductivity.
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Submitted 1 February, 2005; v1 submitted 6 February, 2004;
originally announced February 2004.
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Tunneling density of states of granular metals
Authors:
I. S. Beloborodov,
A. V. Lopatin,
G. Schwiete,
V. M. Vinokur
Abstract:
We investigate the effect of Coulomb interactions on the tunneling density of states (DOS) of granular metallic systems at the onset of Coulomb blockade regime in two and three dimensions. Using the renormalization group technique we derive the analytical expressions for the DOS as a function of temperature $T$ and energy $ε$. We show that samples with the bare intergranular tunneling conductanc…
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We investigate the effect of Coulomb interactions on the tunneling density of states (DOS) of granular metallic systems at the onset of Coulomb blockade regime in two and three dimensions. Using the renormalization group technique we derive the analytical expressions for the DOS as a function of temperature $T$ and energy $ε$. We show that samples with the bare intergranular tunneling conductance $g^0_{\scriptscriptstyle T}$ less than the critical value $g_{\scriptscriptstyle T}^{\scriptscriptstyle C}=(1/2πd) \ln(E_{\scriptscriptstyle C}/δ)$, where $E_{\scriptscriptstyle C}$ and $δ$ are the charging energy and the mean energy level spacing in a single grain respectively, are insulators with a {\it hard gap} in the DOS at temperatures $T\to 0$. In 3d systems the critical conductance $g_{\scriptscriptstyle T}^{\scriptscriptstyle C}$ separates insulating and metallic phases at zero temperature, whereas in the granular films $g_{\scriptscriptstyle T}^{\scriptscriptstyle C}$ separates insulating states with the hard (at $g^0_{\scriptscriptstyle T}<g_{\scriptscriptstyle T}^{\scriptscriptstyle C}$) and soft (at $g^0_{\scriptscriptstyle T}>g_{\scriptscriptstyle T}^{\scriptscriptstyle C}$) gaps. The gap in the DOS begins to develop at temperatures $ T^* \sim E_{\scriptscriptstyle C} g_{\scriptscriptstyle T}^{\scriptscriptstyle 0} \exp (-2πd g_{\scriptscriptstyle T}^{\scriptscriptstyle 0})$ and reaches the value $Δ\sim T^*$ at $T\to 0$.
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Submitted 21 November, 2003;
originally announced November 2003.
