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Condensed Matter > Materials Science

arXiv:cond-mat/0612633 (cond-mat)
[Submitted on 26 Dec 2006]

Title:Transport properties of n-type ultrananocrystalline diamond films

Authors:I. S. Beloborodov, P. Zapol, D. M. Gruen, L. A. Curtiss
View a PDF of the paper titled Transport properties of n-type ultrananocrystalline diamond films, by I. S. Beloborodov and 3 other authors
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Abstract: We investigate transport properties of ultrananocrystalline diamond films for a broad range of temperatures. Addition of nitrogen during plasma-assisted growth increases the conductivity of ultrananocrystalline diamond films by several orders of magnitude. We show that films produced at low concentration of nitrogen in the plasma are very resistive and electron transport occurs via a variable range hopping mechanism while in films produced at high nitrogen concentration the electron states become delocalized and the transport properties of ultrananocrystalline diamond films can be described using the Boltzmann formalism. We discuss the critical concentration of carriers at which the metal to insulator transition in ultrananocrystalline diamond films occurs and compare our results with available experimental data.
Comments: 5 pages, 3 figures
Subjects: Materials Science (cond-mat.mtrl-sci); Disordered Systems and Neural Networks (cond-mat.dis-nn)
Cite as: arXiv:cond-mat/0612633 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0612633v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0612633
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. B 74, 235434 (2006)
Related DOI: https://doi.org/10.1103/PhysRevB.74.235434
DOI(s) linking to related resources

Submission history

From: I. S. Beloborodov [view email]
[v1] Tue, 26 Dec 2006 16:20:04 UTC (164 KB)
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