Showing 1–12 of 12 results for author: Batabyal, R

Effect of UHV annealing on morphology and roughness of sputtered $Si(111)-(7\times7)$ surfaces

Authors: Jagadish Chandra Mahato, Anupam Roy, Rajib Batabyal, Debolina Das, Rahul Gorain, Tuya Dey, B. N. Dev

Abstract: $Ar^+$ ion has been used regularly for the cleaning of semiconductor, metal surfaces for epitaxial nanostructures growth. We have investigated the effect of low-energy $Ar^+$ ion sputtering and subsequent annealing on the $Si(111)-(7\times7)$ surfaces under ultrahigh vacuum (UHV) condition. Using $in-situ$ scanning tunnelling microscopy (STM) we have compared the morphological changes to the $Si(1… ▽ More $Ar^+$ ion has been used regularly for the cleaning of semiconductor, metal surfaces for epitaxial nanostructures growth. We have investigated the effect of low-energy $Ar^+$ ion sputtering and subsequent annealing on the $Si(111)-(7\times7)$ surfaces under ultrahigh vacuum (UHV) condition. Using $in-situ$ scanning tunnelling microscopy (STM) we have compared the morphological changes to the $Si(111)-(7\times7)$ surfaces before and after the sputtering process. Following $500~eV Ar^+$ ion sputtering, the atomically flat $Si(111)-(7\times7)$ surface becomes amorphous. The average root mean square (rms) surface roughness $(σ_{avg})$ of the sputtered surface and that following post-annealing at different temperatures $(500^\circ-700^\circ)C$ under UHV have been measured as a function of STM scan size. While, annealing at $\sim 500^\circ C$ shows no detectable changes in the surface morphology, recrystallization process starts at $\sim 600^\circ C$. For the sputtered samples annealed at temperatures $\geq 600^\circ C, \,log~σ_{avg}$ varies linearly at lower length scales and approaches a saturation value of $\sim 0.6 nm$ for the higher length scales confirming the self-affine fractal nature. The correlation length increases with annealing temperature indicating gradual improvement in crystallinity. For the present experimental conditions, $650^\circ C$ is the optimal annealing temperature for recrystallization. The results offer a method to engineer the crystallinity of sputtered surface during nanofabrication process. △ Less

Submitted 16 December, 2024; originally announced December 2024.

Comments: 20 Pages, 4 Figures

Journal ref: Journal of Crystal Growth Volume 653, 1 March 2025, 128055

Pomeranchuk Instability Induced by an Emergent Higher-Order van Hove Singularity on the Distorted Kagome Surface of Co$_3$Sn$_2$S$_2$

Authors: Pranab Kumar Nag, Rajib Batabyal, Julian Ingham, Noam Morali, Hengxin Tan, Jahyun Koo, Armando Consiglio, Enke Liu, Nurit Avraham, Raquel Queiroz, Ronny Thomale, Binghai Yan, Claudia Felser, Haim Beidenkopf

Abstract: Materials hosting flat bands at the vicinity of the Fermi level promote exotic symmetry broken states. Common to many of these are van Hove singularities at saddle points of the dispersion or even higher-order van Hove singularities where the dispersion is flattened further. The band structure of kagome metals hosts both a flat band and two regular saddle points flanking a Dirac node. We investiga… ▽ More Materials hosting flat bands at the vicinity of the Fermi level promote exotic symmetry broken states. Common to many of these are van Hove singularities at saddle points of the dispersion or even higher-order van Hove singularities where the dispersion is flattened further. The band structure of kagome metals hosts both a flat band and two regular saddle points flanking a Dirac node. We investigate the kagome ferromagnetic metal Co$_3$Sn$_2$S$_2$ using scanning tunneling spectroscopy. We identify a new mechanism by which a triangular distortion on its kagome Co$_3$Sn surface termination considerably flattens the saddle point dispersion, and induces an isolated higher-order van Hove singularity (HOvHS) with algebraically divergent density of states pinned to the Fermi energy. The distortion-induced HOvHS precipitates a Pomeranchuk instability of the Fermi surface, resulting in the formation of a series of nematic electronic states. We visualize the nematic order across an energy shell of about 100 meV in both real-, reciprocal-, and momentum-spaces, as a cascade of wavefunction distributions which spontaneously break the remaining rotational symmetry of the underlying distorted kagome lattice, without generating any additional translational symmetry breaking. It signifies the spontaneous removal of a subset of saddle points from the Fermi energy to lower energies. By tracking the electronic wavefunction structure across the deformed Fermi surface we further identify a charge pumping-like evolution of the wavefunction center of mass. The mechanism we find for the generation of higher-order saddle points under a kagome distortion may be common to other kagome materials, and potentially other lattice structures, suggesting a generic new avenue for inducing unconventional electronic instabilities towards exotic states of matter. △ Less

Submitted 2 October, 2024; originally announced October 2024.

Kramers nodal line in the charge density wave state of YTe$_3$ and the influence of twin domains

Authors: Shuvam Sarkar, Joydipto Bhattacharya, Pramod Bhakuni, Pampa Sadhukhan, Rajib Batabyal, Christos D. Malliakas, Marco Bianchi, Davide Curcio, Shubhankar Roy, Arnab Pariari, Vasant G. Sathe, Prabhat Mandal, Mercouri G. Kanatzidis, Philip Hofmann, Aparna Chakrabarti, Sudipta Roy Barman

Abstract: Recent studies have focused on the relationship between charge density wave (CDW) collective electronic ground states and nontrivial topological states. Using angle-resolved photoemission and density functional theory, we establish that YTe$_3$ is a CDW-induced Kramers nodal line (KNL) metal, a newly proposed topological state of matter. YTe$_3$ is a non-magnetic quasi-2D chalcogenide with a CDW w… ▽ More Recent studies have focused on the relationship between charge density wave (CDW) collective electronic ground states and nontrivial topological states. Using angle-resolved photoemission and density functional theory, we establish that YTe$_3$ is a CDW-induced Kramers nodal line (KNL) metal, a newly proposed topological state of matter. YTe$_3$ is a non-magnetic quasi-2D chalcogenide with a CDW wave vector ($q_{\rm cdw}$) of 0.2907c$^*$. Scanning tunneling microscopy and low energy electron diffraction revealed two orthogonal CDW domains, each with a unidirectional CDW and similar YTe$_3$. The effective band structure (EBS) computations, using DFT-calculated folded bands, show excellent agreement with ARPES because a realistic x-ray crystal structure and twin domains are considered in the calculations. The Fermi surface and ARPES intensity plots show weak shadow bands displaced by $q_{\rm cdw}$ from the main bands. These are linked to CDW modulation, as the EBS calculation confirms. Bilayer split main and shadow bands suggest the existence of crossings, according to theory and experiment. DFT bands, including spin-orbit coupling, indicate a nodal line along the $Σ$ line from multiple band crossings perpendicular to the KNL. Additionally, doubly degenerate bands are only found along the KNL at all energies, with some bands dispersing through the Fermi level. △ Less

Submitted 16 May, 2024; originally announced May 2024.

Growth of bilayer stanene on a magnetic topological insulator aided by a buffer layer

Authors: Sajal Barman, Pramod Bhakuni, Shuvam Sarkar, Joydipto Bhattacharya, Mohammad Balal, Mrinal Manna, Soumen Giri, Arnab Pariari, Tomáš Skála, Markus Huecker, Rajib Batabyal, Aparna Chakrabarti, Sudipta Roy Barman

Abstract: Stanene, a two-dimensional counterpart to graphene, has the potential to exhibit novel quantum phenomena when grown on a magnetic topological insulator (MTI). This work demonstrates the formation of up to bilayer stanene on 30\% Sb-doped MnBi$_{2}$Te$_4$ (MBST), a well known MTI, albeit with a buffer layer (BL) in between. Angle-resolved photoemission spectroscopy (ARPES), when combined with densi… ▽ More Stanene, a two-dimensional counterpart to graphene, has the potential to exhibit novel quantum phenomena when grown on a magnetic topological insulator (MTI). This work demonstrates the formation of up to bilayer stanene on 30\% Sb-doped MnBi$_{2}$Te$_4$ (MBST), a well known MTI, albeit with a buffer layer (BL) in between. Angle-resolved photoemission spectroscopy (ARPES), when combined with density functional theory (DFT), reveals stanene related bands such as two hole-like bands and an inverted parabolic band around the $\overlineΓ$ point. An outer hole-like band traverses the Fermi level (\ef) and gives rise to a hexagonal Fermi surface, showing that stanene on MBST is metallic. In contrast, a bandgap of 0.8 eV is observed at the $\overline{K}$ point. We find that DFT shows good agreement with ARPES only when the BL and hydrogen passivation of the top Sn layer are considered in the calculation. Scanning tunneling microscopy (STM) establishes the honeycomb buckled structure of stanene. A stanene-related component is also detected in the Sn $d$ core level spectra, in addition to a BL-related component. The BL, which forms because of the chemical bonding between Sn and the top two layers of MBST, has an ordered crystal lattice with random anti-site defects. The composition of the BL is estimated to be Sn:Te:Bi/Sb $\approx$ 2:1:1 from x-ray photoelectron spectroscopy. Low energy electron diffraction shows that the lattice constant of stanene is marginally larger than that of MBST, and the STM result aligns with this. The BL bridges this disparity and provides a platform for stanene growth. △ Less

Submitted 8 September, 2024; v1 submitted 12 October, 2023; originally announced October 2023.

Comments: *Both authors contributed equally

Journal ref: Phys. Rev. B 110, 165407 (2024)

Scale-dependent optimized homoepitaxy of InAs(111)A

Authors: Steffen Zelzer, Rajib Batabyal, Derek Dardzinski, Noa Marom, Kasper Grove-Rasmussen, Peter Krogstrup

Abstract: We combined in-situ scanning tunneling microscopy (STM) with the conventional growth characterization methods of atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED) to simultaneously assess atomic-scale impurities and the larger-scale surface morphology of molecular beam epitaxy (MBE) grown homoepitaxial InAs(111)A. By keeping a constant substrate temperature and… ▽ More We combined in-situ scanning tunneling microscopy (STM) with the conventional growth characterization methods of atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED) to simultaneously assess atomic-scale impurities and the larger-scale surface morphology of molecular beam epitaxy (MBE) grown homoepitaxial InAs(111)A. By keeping a constant substrate temperature and indium flux while increasing the As$_2$ flux, we find two differing MBE growth parameter regions for optimized surface roughness on the macro and atomic scale. In particular, we show that a pure step-flow regime with strong suppression of hillock formation can be achieved, even on substrates without intentional offcut. On the other hand, an indium adatom deficient, low atomic defect surface can be observed for a high hillock density. We identify the main remaining point defect on the latter surface by comparison to STM simulations. Furthermore, we provide a method for extracting root-mean-square surface roughness values and discuss their use for surface quality optimization by comparison to scale-dependent, technologically relevant surface metrics. Finally, mapping the separately optimized regions of the growth parameter space should provide a guide for future device engineering involving epitaxial InAs(111)A growth. △ Less

Submitted 23 May, 2022; originally announced May 2022.

Report number: NBI QDEV 2022

Quasiparticle Interference Studies of Quantum Materials

Authors: Nurit Avraham, Jonathan Reiner, Abhay Kumar-Nayak, Noam Morali, Rajib Batabyal, Binghai Yan, Haim Beidenkopf

Abstract: Exotic electronic states are realized in novel quantum materials. This field is revolutionized by the topological classification of materials. Such compounds necessarily host unique states on their boundaries. Scanning tunneling microscopy studies of these surface states have provided a wealth of spectroscopic characterization, with the successful cooperation of ab initio calculations. The method… ▽ More Exotic electronic states are realized in novel quantum materials. This field is revolutionized by the topological classification of materials. Such compounds necessarily host unique states on their boundaries. Scanning tunneling microscopy studies of these surface states have provided a wealth of spectroscopic characterization, with the successful cooperation of ab initio calculations. The method of quasiparticle interference imaging proves to be particularly useful for probing the dispersion relation of the surface bands. Herein, how a variety of additional fundamental electronic properties can be probed via this method is reviewed. It is demonstrated how quasiparticle interference measurements entail mesoscopic size quantization and the electronic phase coherence in semiconducting nanowires; helical spin protection and energy-momentum fluctuations in a topological insulator; and the structure of the Bloch wave function and the relative insusceptibility of topological electronic states to surface potential in a topological Weyl semimetal. △ Less

Submitted 31 August, 2021; originally announced August 2021.

Journal ref: Adv. Mater. 30, 1707628 (2018)

Spectroscopic Visualization of a Robust Electronic Response of Semiconducting Nanowires to Deposition of Superconducting Islands

Authors: Jonathan Reiner, Abhay Kumar Nayak, Amit Tulchinsky, Aviram Steinbok, Tom Koren, Noam Morali, Rajib Batabyal, Jung-Hyun Kang, Nurit Avraham, Yuval Oreg, Hadas Shtrikman, Haim Beidenkopf

Abstract: Following significant progress in the visualization and characterization of Majorana end modes in hybrid systems of semiconducting nanowires and superconducting islands, much attention is devoted to the investigation of the electronic structure at the buried interface between the semiconductor and the superconductor. The properties of that interface and the structure of the electronic wavefunction… ▽ More Following significant progress in the visualization and characterization of Majorana end modes in hybrid systems of semiconducting nanowires and superconducting islands, much attention is devoted to the investigation of the electronic structure at the buried interface between the semiconductor and the superconductor. The properties of that interface and the structure of the electronic wavefunctions that occupy it determine the functionality and the topological nature of the superconducting state induced therein. Here we study this buried interface by performing spectroscopic mappings of superconducting aluminum islands epitaxially grown in-situ on indium arsenide nanowires. We find unexpected robustness of the hybrid system as the direct contact with the aluminum islands does not lead to any change in the chemical potential of the nanowires, nor does it induce a significant band bending in their vicinity. We attribute this to the presence of surface states bound to the facets of the nanowire. Such surface states, that are present also in bare nanowires prior to aluminum deposition, pin the Fermi-level thus rendering the nanowires resilient to surface perturbations. The aluminum islands further display Coulomb blockade gaps and peaks that signify the formation of a resistive tunneling barrier at the InAs-Al interface. At low energies we identify a potential energy barrier that further suppresses the transmittance through the interface. A corresponding barrier exists in bare semiconductors between surface states and the accumulation layer, induced to maintain charge neutrality. Our observations elucidate the delicate interplay between the resistive nature of the InAs-Al interface and the ability to proximitize superconductivity and tune the chemical potential in semiconductor-superconductor hybrid nanowires. △ Less

Submitted 17 November, 2019; originally announced November 2019.

Comments: 32 pages, 10 figures

Journal ref: Phys. Rev. X 10, 011002 (2020)

Fermi-arc diversity on surface terminations of the magnetic Weyl semimetal Co3Sn2S2

Authors: Noam Morali, Rajib Batabyal, Pranab Kumar Nag, Enke Liu, Qiunan Xu, Yan Sun, Binghai Yan, Claudia Felser, Nurit Avraham, Haim Beidenkopf

Abstract: Bulk-surface correspondence in Weyl semimetals assures the formation of topological "Fermi-arc" surface bands whose existence is guaranteed by bulk Weyl nodes. By investigating three distinct surface terminations of the ferromagnetic semimetal Co3Sn2S2 we verify spectroscopically its classification as a time reversal symmetry broken Weyl semimetal. We show that the distinct surface potentials impo… ▽ More Bulk-surface correspondence in Weyl semimetals assures the formation of topological "Fermi-arc" surface bands whose existence is guaranteed by bulk Weyl nodes. By investigating three distinct surface terminations of the ferromagnetic semimetal Co3Sn2S2 we verify spectroscopically its classification as a time reversal symmetry broken Weyl semimetal. We show that the distinct surface potentials imposed by three different terminations modify the Fermi-arc contour and Weyl node connectivity. On the Sn surface we identify intra-Brillouin zone Weyl node connectivity of Fermi-arcs, while on Co termination the connectivity is across adjacent Brillouin zones. On the S surface Fermi-arcs overlap with non-topological bulk and surface states that ambiguate their connectivity and obscure their exact identification. By these we resolve the topologically protected electronic properties of a Weyl semimetal and its unprotected ones that can be manipulated and engineered. △ Less

Submitted 1 March, 2019; originally announced March 2019.

Visualizing "Fermi arcs" in the Weyl semimetal TaAs

Authors: Rajib Batabyal, Noam Morali, Nurit Avraham, Yan Sun, Marcus Schmidt, Claudia Felser, Ady Stern, Binghai Yan, Haim Beidenkopf

Abstract: One of the hallmarks of Weyl semi-metals is the existence of unusual topological surface states known as 'Fermi arcs' [1-3]. The formation of these states is guaranteed by the existence of bulk Weyl points with opposite chirality. Tantalum Arsenide (TaAs) [4-9], a member of the newly discovered family of Weyl semi-metals [4,5], harbors a host of non-topological ('trivial') surface states overlappi… ▽ More One of the hallmarks of Weyl semi-metals is the existence of unusual topological surface states known as 'Fermi arcs' [1-3]. The formation of these states is guaranteed by the existence of bulk Weyl points with opposite chirality. Tantalum Arsenide (TaAs) [4-9], a member of the newly discovered family of Weyl semi-metals [4,5], harbors a host of non-topological ('trivial') surface states overlapping in energy with the predicted 12 'Fermi arcs'. This overlap poses a major challenge in identifying the signatures of the arcs [10]. Here we harness the inherently distinct spatial structure of trivial and Fermi arc states to visualize the Fermi arcs for the first time using scanning tunneling microscopy. We do so in four distinct ways, each of which highlights a different aspect of their unusual nature. We reveal their relatively isotropic scattering signature, their energy dispersion and its relation to the bulk Weyl points, their deep bulk penetration relative to that of non-topological surface states and their weak coupling to the atomic structure. The latter is obtained by accounting for the spatial structure of the Bloch wavefunction and its effect on the scattering properties of the electrons off lattice defects in general. It thus provides a novel analysis tool for the spectroscopic characterization of electronic wavefunctions using scanning tunneling microscopy. △ Less

Submitted 1 March, 2016; originally announced March 2016.

Journal ref: Sci. Adv. 2, e1600709 (2016)

Evolution of Fermi Level State Density in Ultrathin Films Near the Two Dimensional Limit: Experiment and Theory

Authors: R. Batabyal, A. H. M. Abdul Wasey, J. C. Mahato, Debolina Das, G. P. Das, B. N. Dev

Abstract: Electronic density of states (DOS) at Fermi level has been investigated in ultrathin Ag films grown on Si(111)-(7x7) down to the two dimensional limit of a single atomic layer. Measurement of DOS at Fermi level by scanning tunneling spectroscopy shows an approximate (1 - γ/d) dependence, where γ is a constant and d is the film thickness. The results are explained in the light of an analytical theo… ▽ More Electronic density of states (DOS) at Fermi level has been investigated in ultrathin Ag films grown on Si(111)-(7x7) down to the two dimensional limit of a single atomic layer. Measurement of DOS at Fermi level by scanning tunneling spectroscopy shows an approximate (1 - γ/d) dependence, where γ is a constant and d is the film thickness. The results are explained in the light of an analytical theory as well as our density functional theory (DFT) calculations. DFT results also show that in the proximity of the interface the DOS values of the film and the substrate are mutually affected by each other. △ Less

Submitted 3 December, 2014; originally announced December 2014.

Crossover regimes in lower dimensional structures

Authors: R. Batabyal, B. N. Dev

Abstract: Modern growth and fabrication techniques can produce lower dimensional structures in the crossover regime. Such structures in the crossover regime can provide tunability of various properties. For example, a zero-dimensional (0-D) structure evolving towards a 2-D structure shows electronic structure which is neither 0-D-like, nor 2-D-like. Within the crossover regime the electronic density of stat… ▽ More Modern growth and fabrication techniques can produce lower dimensional structures in the crossover regime. Such structures in the crossover regime can provide tunability of various properties. For example, a zero-dimensional (0-D) structure evolving towards a 2-D structure shows electronic structure which is neither 0-D-like, nor 2-D-like. Within the crossover regime the electronic density of states (DOS) at Fermi level (Ef) keeps on changing as the size of the system changes. DOS at Ef determines many properties of materials, such as electronic specific heat, spin susceptibility etc. Keeping the importance of DOS at Ef in mind, we determine their values and other details of electronic structure of lower dimensional structures of metals, in the 0-D to 1-D, 1-D to 2-D, 2-D to 3-D, 0-D to 2-D, 0-D to 3-Dand 1-D to 3-Dcrossover regimes, in a simple free electron model. We compare our results with analytical theory and experimental results, wherever available. We also present some results obtained by scanning tunneling spectroscopy measurements on Ag islands on Si(111) evolving from a 0-D to a 2-D structure. This simple model is quite useful in understanding lower dimensional structures in the crossover regimes. △ Less

Submitted 2 August, 2013; originally announced August 2013.

Nanodot to Nanowire: A strain-driven shape transition in self-organized endotaxial CoSi2 on Si (100)

Authors: J. C. Mahato, Debolina Das, R. R. Juluri, R. Batabyal, Anupam Roy, P. V. Satyam, B. N. Dev

Abstract: We report a phenomenon of strain-driven shape transition in the growth of nanoscale self-organized endotaxial CoSi2 islands on Si (100) substrates. Small square shaped islands as small as 15\times15 nm2 have been observed. Islands grow in the square shape following the four fold symmetry of the Si (100) substrate, up to a critical size of 67 \times 67 nm2. A shape transition takes place at this cr… ▽ More We report a phenomenon of strain-driven shape transition in the growth of nanoscale self-organized endotaxial CoSi2 islands on Si (100) substrates. Small square shaped islands as small as 15\times15 nm2 have been observed. Islands grow in the square shape following the four fold symmetry of the Si (100) substrate, up to a critical size of 67 \times 67 nm2. A shape transition takes place at this critical size. Larger islands adopt a rectangular shape with ever increasing length and the width decreasing to an asymptotic value of ~25 nm. This produces long wires of nearly constant width.We have observed nanowire islands with aspect ratios as large as ~ 20:1. The long nanowire heterostructures grow partly above (~ 3 nm) the surface, but mostly into (~17 nm) the Si substrate. These self-organized nanostructures behave as nanoscale Schottky diodes. They may be useful in Si-nanofabrication and find potential application in constructing nano devices. △ Less

Submitted 4 May, 2012; originally announced May 2012.

Comments: 9 pages, 7 figures

Journal ref: Appl. Phys. Lett. 100, 263117 (2012)