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Condensed Matter > Materials Science

arXiv:2412.11470 (cond-mat)
[Submitted on 16 Dec 2024]

Title:Effect of UHV annealing on morphology and roughness of sputtered $Si(111)-(7\times7)$ surfaces

Authors:Jagadish Chandra Mahato, Anupam Roy, Rajib Batabyal, Debolina Das, Rahul Gorain, Tuya Dey, B. N. Dev
View a PDF of the paper titled Effect of UHV annealing on morphology and roughness of sputtered $Si(111)-(7\times7)$ surfaces, by Jagadish Chandra Mahato and 6 other authors
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Abstract:$Ar^+$ ion has been used regularly for the cleaning of semiconductor, metal surfaces for epitaxial nanostructures growth. We have investigated the effect of low-energy $Ar^+$ ion sputtering and subsequent annealing on the $Si(111)-(7\times7)$ surfaces under ultrahigh vacuum (UHV) condition. Using $in-situ$ scanning tunnelling microscopy (STM) we have compared the morphological changes to the $Si(111)-(7\times7)$ surfaces before and after the sputtering process. Following $500~eV Ar^+$ ion sputtering, the atomically flat $Si(111)-(7\times7)$ surface becomes amorphous. The average root mean square (rms) surface roughness $({\sigma}_{avg})$ of the sputtered surface and that following post-annealing at different temperatures $(500^\circ-700^\circ)C$ under UHV have been measured as a function of STM scan size. While, annealing at $\sim 500^\circ C$ shows no detectable changes in the surface morphology, recrystallization process starts at $\sim 600^\circ C$. For the sputtered samples annealed at temperatures $\geq 600^\circ C, \,log~\sigma_{avg}$ varies linearly at lower length scales and approaches a saturation value of $\sim 0.6 nm$ for the higher length scales confirming the self-affine fractal nature. The correlation length increases with annealing temperature indicating gradual improvement in crystallinity. For the present experimental conditions, $650^\circ C$ is the optimal annealing temperature for recrystallization. The results offer a method to engineer the crystallinity of sputtered surface during nanofabrication process.
Comments: 20 Pages, 4 Figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2412.11470 [cond-mat.mtrl-sci]
  (or arXiv:2412.11470v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2412.11470
arXiv-issued DOI via DataCite
Journal reference: Journal of Crystal Growth Volume 653, 1 March 2025, 128055
Related DOI: https://doi.org/10.1016/j.jcrysgro.2025.128055
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Submission history

From: J C Mahato [view email]
[v1] Mon, 16 Dec 2024 06:05:55 UTC (1,095 KB)
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