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Polarimetry With Spins in the Solid State
Authors:
Lorenzo Peri,
Felix-Ekkehard von Horstig,
Sylvain Barraud,
Christopher J. B. Ford,
Mónica Benito,
M. Fernando Gonzalez-Zalba
Abstract:
The ability for optically active media to rotate the polarization of light is the basis of polarimetry, an illustrious technique responsible for many breakthroughs in fields as varied as astronomy, medicine and material science. Here, we recast the primary mechanism for spin readout in semiconductor-based quantum computers, Pauli spin-blockade (PSB), as the natural extension of polarimetry to the…
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The ability for optically active media to rotate the polarization of light is the basis of polarimetry, an illustrious technique responsible for many breakthroughs in fields as varied as astronomy, medicine and material science. Here, we recast the primary mechanism for spin readout in semiconductor-based quantum computers, Pauli spin-blockade (PSB), as the natural extension of polarimetry to the third dimension. We perform polarimetry with spins through a silicon quantum dot exchanging a hole with a boron acceptor, demonstrating the role of spin-orbit coupling in creating spin misalignment. Perfect spin alignment may be recovered by means of rotating the applied magnetic-field orientation. This work shows how spin misalignment sets a fundamental upper limit for the spin readout fidelity in quantum-computing systems based on PSB.
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Submitted 23 October, 2024;
originally announced October 2024.
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Floquet interferometry of a dressed semiconductor quantum dot
Authors:
Felix-Ekkehard von Horstig,
Lorenzo Peri,
Sylvain Barraud,
Sergey N. Shevchenko,
Christopher J. B. Ford,
M. Fernando Gonzalez-Zalba
Abstract:
A quantum system interacting with a time-periodic excitation creates a ladder of hybrid eigenstates in which the system is mixed with an increasing number of photons. This mechanism, referred to as dressing, has been observed in the context of light-matter interaction in systems as varied as atoms, molecules and solid-state qubits. In this work, we demonstrate state dressing in a semiconductor qua…
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A quantum system interacting with a time-periodic excitation creates a ladder of hybrid eigenstates in which the system is mixed with an increasing number of photons. This mechanism, referred to as dressing, has been observed in the context of light-matter interaction in systems as varied as atoms, molecules and solid-state qubits. In this work, we demonstrate state dressing in a semiconductor quantum dot tunnel-coupled to a charge reservoir. We observe the emergence of a Floquet ladder of states in the system's high-frequency electrical response, manifesting as interference fringes at the multiphoton resonances despite the system lacking an avoided crossing. We study the dressed quantum dot while changing reservoir temperature, charge lifetime, and excitation amplitude and reveal the fundamental nature of the mechanism by developing a theory based on the quantum dynamics of the Floquet ladder, which is in excellent agreement with the data. Furthermore, we show how the technique finds applications in the accurate electrostatic characterisation of semiconductor quantum dots.
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Submitted 18 August, 2024; v1 submitted 19 July, 2024;
originally announced July 2024.
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Electrical readout of spins in the absence of spin blockade
Authors:
Felix-Ekkehard von Horstig,
Lorenzo Peri,
Sylvain Barraud,
Jason A. W. Robinson,
Monica Benito,
Frederico Martins,
M. Fernando Gonzalez-Zalba
Abstract:
In semiconductor nanostructures, spin blockade (SB) is the most scalable mechanism for electrical spin readout requiring only two bound spins for its implementation which, in conjunction with charge sensing techniques, has led to high-fidelity readout of spins in semiconductor-based quantum processors. However, various mechanisms may lift SB, such as strong spin-orbit coupling (SOC) or low-lying e…
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In semiconductor nanostructures, spin blockade (SB) is the most scalable mechanism for electrical spin readout requiring only two bound spins for its implementation which, in conjunction with charge sensing techniques, has led to high-fidelity readout of spins in semiconductor-based quantum processors. However, various mechanisms may lift SB, such as strong spin-orbit coupling (SOC) or low-lying excited states, hence posing challenges to perform spin readout at scale and with high fidelity in such systems. Here, we present a method, based on the dependence of the two-spin system polarizability on energy detuning, to perform spin state readout even when SB lifting mechanisms are dominant. It leverages SB lifting as a resource to detect different spin measurement outcomes selectively and positively. We demonstrate the method using a hybrid system formed by a quantum dot (QD) and a Boron acceptor in a silicon p-type transistor and show spin selective and positive readout of different spin states under SB lifting conditions due to (i) SOC and (ii) low-lying orbital states in the QD. We further use the method to determine the detuning-dependent spin relaxation time of 0.1-8~$μ$s. Our method should help perform high-fidelity projective spin measurements in systems subject to strong SOC and may facilitate quantum tomography and state leakage studies.
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Submitted 19 March, 2024;
originally announced March 2024.
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Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots
Authors:
Felix-Ekkehard von Horstig,
David J. Ibberson,
Giovanni A. Oakes,
Laurence Cochrane,
David F. Wise,
Nadia Stelmashenko,
Sylvain Barraud,
Jason A. W. Robinson,
Frederico Martins,
M. Fernando Gonzalez-Zalba
Abstract:
Fast measurements of quantum devices is important in areas such as quantum sensing, quantum computing and nanodevice quality analysis. Here, we develop a superconductor-semiconductor multi-module microwave assembly to demonstrate charge state readout at the state-of-the-art. The assembly consist of a superconducting readout resonator interfaced to a silicon-on-insulator (SOI) chiplet containing qu…
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Fast measurements of quantum devices is important in areas such as quantum sensing, quantum computing and nanodevice quality analysis. Here, we develop a superconductor-semiconductor multi-module microwave assembly to demonstrate charge state readout at the state-of-the-art. The assembly consist of a superconducting readout resonator interfaced to a silicon-on-insulator (SOI) chiplet containing quantum dots (QDs) in a high-$κ$ nanowire transistor. The superconducting chiplet contains resonant and coupling elements as well as $LC$ filters that, when interfaced with the silicon chip, result in a resonant frequency $f=2.12$ GHz, a loaded quality factor $Q=850$, and a resonator impedance $Z=470$ $Ω$. Combined with the large gate lever arms of SOI technology, we achieve a minimum integration time for single and double QD transitions of 2.77 ns and 13.5 ns, respectively. We utilize the assembly to measure charge noise over 9 decades of frequency up to 500 kHz and find a 1/$f$ dependence across the whole frequency spectrum as well as a charge noise level of 4 $μ$eV/$\sqrt{\text{Hz}}$ at 1 Hz. The modular microwave circuitry presented here can be directly utilized in conjunction with other quantum device to improve the readout performance as well as enable large bandwidth noise spectroscopy, all without the complexity of superconductor-semiconductor monolithic fabrication.
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Submitted 2 May, 2024; v1 submitted 26 April, 2023;
originally announced April 2023.
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Non-galvanic calibration and operation of a quantum dot thermometer
Authors:
J. M. A. Chawner,
S. Barraud,
M. F. Gonzalez-Zalba,
S. Holt,
E. A. Laird,
Yu. A. Pashkin,
J. R. Prance
Abstract:
A cryogenic quantum dot thermometer is calibrated and operated using only a single non-galvanic gate connection. The thermometer is probed with radio-frequency reflectometry and calibrated by fitting a physical model to the phase of the reflected radio-frequency signal taken at temperatures across a small range. Thermometry of the source and drain reservoirs of the dot is then performed by fitting…
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A cryogenic quantum dot thermometer is calibrated and operated using only a single non-galvanic gate connection. The thermometer is probed with radio-frequency reflectometry and calibrated by fitting a physical model to the phase of the reflected radio-frequency signal taken at temperatures across a small range. Thermometry of the source and drain reservoirs of the dot is then performed by fitting the calibrated physical model to new phase data. The thermometer can operate at the transition between thermally broadened and lifetime broadened regimes, and outside the temperatures used in calibration. Electron thermometry was performed at temperatures between $3.0\,\mathrm{K}$ and $1.0\,\mathrm{K}$, in both a $1\,\mathrm{K}$ cryostat and a dilution refrigerator. The experimental setup allows fast electron temperature readout with a sensitivity of $4.0\pm0.3 \, \mathrm{mK}/\sqrt{\mathrm{Hz}}$, at Kelvin temperatures. The non-galvanic calibration process gives a readout of physical parameters, such as the quantum dot lever arm. The demodulator used for reflectometry readout is readily available and very affordable.
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Submitted 28 January, 2021; v1 submitted 2 December, 2020;
originally announced December 2020.
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Large dispersive interaction between a CMOS double quantum dot and microwave photons
Authors:
David J. Ibberson,
Theodor Lundberg,
James A. Haigh,
Louis Hutin,
Benoit Bertrand,
Sylvain Barraud,
Chang-Min Lee,
Nadia A. Stelmashenko,
Giovanni A. Oakes,
Laurence Cochrane,
Jason W. A. Robinson,
Maud Vinet,
M. Fernando Gonzalez-Zalba,
Lisa A. Ibberson
Abstract:
We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a superconducting inductor. We achieve a coupling rate $g_0/(2π) = 204 \pm 2$ MHz by exploiting the large interdot gate lever arm of an asymmetric split-gate device,…
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We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a superconducting inductor. We achieve a coupling rate $g_0/(2π) = 204 \pm 2$ MHz by exploiting the large interdot gate lever arm of an asymmetric split-gate device, $α=0.72$, and by inductively coupling to the resonator to increase its impedance, $Z_\text{r}=560~Ω$. In the dispersive regime, the large coupling strength at the double quantum dot hybridisation point produces a frequency shift comparable to the resonator linewidth, the optimal setting for maximum state visibility. We exploit this regime to demonstrate rapid dispersive readout of the charge degree of freedom, with a SNR of 3.3 in 50 ns. In the resonant regime, the fast charge decoherence rate precludes reaching the strong coupling regime, but we show a clear route to spin-photon circuit quantum electrodynamics using hybrid CMOS systems.
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Submitted 14 May, 2021; v1 submitted 1 April, 2020;
originally announced April 2020.
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28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing
Authors:
H. Bohuslavskyi,
S. Barraud,
M. Cassé,
V. Barral,
B. Bertrand,
L. Hutin,
F. Arnaud,
P. Galy,
M. Sanquer,
S. De Franceschi,
M. Vinet
Abstract:
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent $V_{TH}$ controllability. Low-temperature operation enables higher d…
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This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent $V_{TH}$ controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.
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Submitted 20 December, 2019;
originally announced February 2020.
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All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology
Authors:
Léo Bourdet,
Louis Hutin,
Benoit Bertrand,
Andrea Corna,
Heorhii Bohuslavskyi,
Anthony Amisse,
Alessandro Crippa,
Romain Maurand,
Sylvain Barraud,
Matias Urdampilleta,
Christopher Bäuerle,
Tristan Meunier,
Marc Sanquer,
Xavier Jehl,
Silvano De Franceschi,
Yann-Michel Niquet,
Maud Vinet
Abstract:
We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valle…
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We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the trade-off between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range.
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Submitted 20 December, 2019;
originally announced December 2019.
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Towards scalable silicon quantum computing
Authors:
M. Vinet,
L. Hutin,
B. Bertrand,
S. Barraud,
J. -M. Hartmann,
Y. -J. Kim,
V. Mazzocchi,
A. Amisse,
H. Bohuslavskyi,
L. Bourdet,
A. Crippa,
X. Jehl,
R. Maurand,
Y. -M. Niquet,
M. Sanquer,
B. Venitucci,
B. Jadot,
E. Chanrion,
P. -A. Mortemousque,
C. Spence,
M. Urdampilleta,
S. De Franceschi,
T. Meunier
Abstract:
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.
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Submitted 20 December, 2019;
originally announced December 2019.
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All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology
Authors:
L. Hutin,
L. Bourdet,
B. Bertrand,
A. Corna,
H. Bohuslavskyi,
A. Amisse,
A. Crippa,
R. Maurand,
S. Barraud,
M. Urdampilleta,
C. Bäuerle,
T. Meunier,
M. Sanquer,
X. Jehl,
S. De Franceschi,
Y. -M. Niquet,
M. Vinet
Abstract:
We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected config…
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We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected configuration.
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Submitted 20 December, 2019;
originally announced December 2019.
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Si CMOS Platform for Quantum Information Processing
Authors:
L. Hutin,
R. Maurand,
D. Kotekar-Patil,
A. Corna,
H. Bohuslavskyi,
X. Jehl,
S. Barraud,
S. De Franceschi,
M. Sanquer,
M. Vinet
Abstract:
We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself.
We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself.
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Submitted 20 December, 2019;
originally announced December 2019.
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Control of single spin in CMOS devices and its application for quantum bits
Authors:
R. Maurand,
D. Kotekar-Patil,
A. Corna,
H. Bohuslavskyi,
A. Crippa,
R. Laviéville,
L. Hutin,
S. Barraud,
M. Vinet,
S. De Franceschi,
X. Jehl,
M. Sanquer
Abstract:
We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at very low temperature. The spin manipulation is done by a microwave electric field applied directly on a gate. The presented results are a proof-of-principle demonstration of the possibility to define qubits by means of conv…
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We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at very low temperature. The spin manipulation is done by a microwave electric field applied directly on a gate. The presented results are a proof-of-principle demonstration of the possibility to define qubits by means of conventional industrial fabrication processes.
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Submitted 19 December, 2019;
originally announced December 2019.
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SOI technology for quantum information processing
Authors:
S. De Franceschi,
L. Hutin,
R. Maurand,
L. Bourdet,
H. Bohuslavskyi,
A. Corna,
D. Kotekar-Patil,
S. Barraud,
X. Jehl,
Y. -M. Niquet,
M. Sanquer,
M. Vinet
Abstract:
We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by…
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We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology.
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Submitted 17 December, 2019;
originally announced December 2019.
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A quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry
Authors:
Rubén M. Otxoa,
Anasua Chatterjee,
Sergey N. Shevchenko,
Sylvain Barraud,
Franco Nori,
M. Fernando Gonzalez-Zalba
Abstract:
The implementation of quantum technologies in electronics leads naturally to the concept of coherent single-electron circuits, in which a single charge is used coherently to provide enhanced performance. In this work, we propose a coherent single-electron device that operates as an electrically-tunable capacitor. This system exhibits a sinusoidal dependence of the capacitance with voltage, in whic…
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The implementation of quantum technologies in electronics leads naturally to the concept of coherent single-electron circuits, in which a single charge is used coherently to provide enhanced performance. In this work, we propose a coherent single-electron device that operates as an electrically-tunable capacitor. This system exhibits a sinusoidal dependence of the capacitance with voltage, in which the amplitude of the capacitance changes and the voltage period can be tuned by electric means. The device concept is based on double-passage Landau-Zener-Stückelberg-Majorana interferometry of a coupled two-level system that is further tunnel-coupled to an electron reservoir. We test this model experimentally by performing Landau-Zener-Stückelberg-Majorana interferometry in a single-electron double quantum dot coupled to an electron reservoir and show that the voltage period of the capacitance oscillations is directly proportional to the excitation frequency and that the amplitude of the oscillations depends on the dynamical parameters of the system: intrinsic relaxation and coherence time, as well as the tunneling rate to the reservoir. Our work opens up an opportunity to use the non-linear capacitance of double quantum dots to obtain enhanced device functionalities.
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Submitted 15 August, 2019; v1 submitted 12 August, 2019;
originally announced August 2019.
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Fast gate-based readout of silicon quantum dots using Josephson parametric amplification
Authors:
S. Schaal,
I. Ahmed,
J. A. Haigh,
L. Hutin,
B. Bertrand,
S. Barraud,
M. Vinet,
C. -M. Lee,
N. Stelmashenko,
J. W. A. Robinson,
J. Y. Qiu,
S. Hacohen-Gourgy,
I. Siddiqi,
M. F. Gonzalez-Zalba,
J. J. L. Morton
Abstract:
Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast-feedback in error correction protocols. Here, we combine radio-…
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Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast-feedback in error correction protocols. Here, we combine radio-frequency gate-based sensing at 622 MHz with a Josephson parametric amplifier (JPA), that operates in the 500-800 MHz band, to reduce the integration time required to read the state of a silicon double quantum dot formed in a nanowire transistor. Based on our achieved signal-to-noise ratio (SNR), we estimate that singlet-triplet single-shot readout with an average fidelity of 99.7% could be performed in 1 $μ$s, well-below the requirements for fault-tolerant readout and 30 times faster than without the JPA. Additionally, the JPA allows operation at a lower RF power while maintaining identical SNR. We determine a noise temperature of 200 mK with a contribution from the JPA (25%), cryogenic amplifier (25%) and the resonator (50%), showing routes to further increase the read-out speed.
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Submitted 23 July, 2019; v1 submitted 22 July, 2019;
originally announced July 2019.
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Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization
Authors:
H. Bohuslavskyi,
S. Barraud,
V. Barral,
M. Cassé,
L. Le Guevel,
L. Hutin,
B. Bertrand,
A. Crippa,
X. Jehl,
G. Pillonnet,
A. G. M. Jansen,
F. Arnaud,
P. Galy,
R. Maurand,
S. De Franceschi,
M. Sanquer,
M. Vinet
Abstract:
Extensive electrical characterization of ring oscillators (ROs) made in high-$κ$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage ($τ_P$), static current ($I_{STAT}$), and dynamic current ($I_{DYN}$) are analyzed for the case of the increase of threshold voltage ($V_{TH}$) observed at low te…
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Extensive electrical characterization of ring oscillators (ROs) made in high-$κ$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage ($τ_P$), static current ($I_{STAT}$), and dynamic current ($I_{DYN}$) are analyzed for the case of the increase of threshold voltage ($V_{TH}$) observed at low temperature. Then, the same analysis is performed by compensating $V_{TH}$ to a constant, temperature independent value through forward body-biasing (FBB). Energy efficiency optimization is proposed for different supply voltages ($V_{DD}$) in order to find an optimal operating point combining both high RO frequencies and low power dissipation. We show that the Energy-Delay product ($EDP$) can be significantly reduced at low temperature by applying a forward body bias voltage ($V_{FBB}$). We demonstrate that outstanding performance of RO in terms of speed ($τ_P$=37ps) and static power (7nA/stage) can be achieved at 4.3K with $V_{DD}$ reduced down to 0.325V.
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Submitted 14 March, 2019;
originally announced March 2019.
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Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs described with Band Broadening
Authors:
H. Bohuslavskyi,
A. G. M. Jansen,
S. Barraud,
V. Barral,
M. Cassé,
L. Le Guevel,
X. Jehl,
L. Hutin,
B. Bertrand,
G. Billiot,
G. Pillonnet,
F. Arnaud,
P. Galy,
S. De Franceschi,
M. Vinet,
M. Sanquer
Abstract:
In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by $SS(T) = \ln10~k_BT/e$. However, recent low-temperature studies of different advanced CMOS technologies have reported $SS$(4K or lower) values that are at leas…
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In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by $SS(T) = \ln10~k_BT/e$. However, recent low-temperature studies of different advanced CMOS technologies have reported $SS$(4K or lower) values that are at least an order of magnitude larger. Here, we present and analyze the saturation of $SS(T)$ in 28nm fully-depleted silicon-on-insulator (FD-SOI) devices for both n- and p-type MOSFETs of different gate oxide thicknesses and gate lengths down to 4K. Until now, the increase of interface-trap density close to the band edge as temperature decreases has been put forward to understand the saturation. Here, an original explanation of the phenomenon is presented by considering a disorder-induced tail in the density of states at the conduction (valence) band edge for the calculation of the MOS channel transport by applying Fermi-Dirac statistics. This results in a subthreshold $I_{D}\sim e^{eV_{GS}/k_BT_0}$ for $T_0=35$K with saturation value $SS(T<T_0) = \ln 10~k_BT_0/e$. The proposed model adequately describes the experimental data of $SS(T)$ from 300 down to 4K using $k_BT_0 \simeq 3$meV for the width of the exponential tail and can also accurately describe $SS(I_{D})$ within the whole subthreshold region. Our analysis allows a direct determination of the technology-dependent band-tail extension forming a crucial element in future compact modeling and design of cryogenic circuits.
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Submitted 13 March, 2019;
originally announced March 2019.
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Gate-Based High Fidelity Spin Read-out in a CMOS Device
Authors:
Matias Urdampilleta,
David J. Niegemann,
Emmanuel Chanrion,
Baptiste Jadot,
Cameron Spence,
Pierre-André Mortemousque,
1 Christopher Bäuerle,
Louis Hutin,
Benoit Bertrand,
Sylvain Barraud,
Romain Maurand,
Marc Sanquer,
Xavier Jehl,
Silvano De Franceschi,
Maud Vinet,
Tristan Meunier
Abstract:
The engineering of electron spin qubits in a compact unit cell embedding all quantum functionalities is mandatory for large scale integration. In particular, the development of a high-fidelity and scalable spin readout method remains an open challenge. Here we demonstrate high-fidelity and robust spin readout based on gate reflectometry in a CMOS device comprising one qubit dot and one ancillary d…
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The engineering of electron spin qubits in a compact unit cell embedding all quantum functionalities is mandatory for large scale integration. In particular, the development of a high-fidelity and scalable spin readout method remains an open challenge. Here we demonstrate high-fidelity and robust spin readout based on gate reflectometry in a CMOS device comprising one qubit dot and one ancillary dot coupled to an electron reservoir to perform readout. This scalable method allows us to read out a spin with a fidelity above 99% for 1 ms integration time. To achieve such fidelity, we exploit a latched spin blockade mechanism that requires electron exchange between the ancillary dot and the reservoir. We show that the demonstrated high read-out fidelity is fully preserved up to 0.5 K. This results holds particular relevance for the future co-integration of spin qubits and classical control electronics.
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Submitted 12 September, 2018;
originally announced September 2018.
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A CMOS dynamic random access architecture for radio-frequency readout of quantum devices
Authors:
S. Schaal,
A. Rossi,
S. Barraud,
J. J. L. Morton,
M. F. Gonzalez-Zalba
Abstract:
Quantum computing technology is maturing at a relentless pace, yet individual quantum bits are wired one by one. As quantum processors become more complex, they require efficient interfaces to deliver signals for control and readout while keeping the number of inputs manageable. Digital electronics offers solutions to the scaling challenge by leveraging established industrial infrastructure and ap…
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Quantum computing technology is maturing at a relentless pace, yet individual quantum bits are wired one by one. As quantum processors become more complex, they require efficient interfaces to deliver signals for control and readout while keeping the number of inputs manageable. Digital electronics offers solutions to the scaling challenge by leveraging established industrial infrastructure and applying it to integrate silicon-based quantum devices with conventional CMOS circuits. Here, we combine both technologies at milikelvin temperatures and demonstrate the building blocks of a dynamic random access architecture for efficient readout of complex quantum circuits. Our circuit is divided into cells, each containing a CMOS quantum dot (QD) and a field-effect transistor that enables selective readout of the QD, as well as charge storage on the QD gate similar to 1T-1C DRAM technology. We show dynamic readout of two cells by interfacing them with a single radio-frequency resonator. Our results demonstrate a path to reducing the number of input lines per qubit and enable addressing of large-scale device arrays.
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Submitted 11 September, 2018;
originally announced September 2018.
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Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices
Authors:
David J. Ibberson,
Lisa A. Ibberson,
Geoff Smithson,
James A. Haigh,
Sylvain Barraud,
M. Fernando Gonzalez-Zalba
Abstract:
We present a sensitive, tunable radio-frequency resonator designed to detect reactive changes in nanoelectronic devices down to dilution refrigerator temperatures. The resonator incorporates GaAs varicap diodes to allow electrical tuning of the resonant frequency and the coupling to the input line. We find a resonant frequency tuning range of 8.4 MHz at 55 mK that increases to 29 MHz at 1.5 K. To…
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We present a sensitive, tunable radio-frequency resonator designed to detect reactive changes in nanoelectronic devices down to dilution refrigerator temperatures. The resonator incorporates GaAs varicap diodes to allow electrical tuning of the resonant frequency and the coupling to the input line. We find a resonant frequency tuning range of 8.4 MHz at 55 mK that increases to 29 MHz at 1.5 K. To assess the impact on performance of different tuning conditions, we connect a quantum dot in a silicon nanowire field-effect transistor to the resonator, and measure changes in the device capacitance caused by cyclic electron tunneling. At 250 mK, we obtain an equivalent charge sensitivity of $43~μe / \sqrt{\text{Hz}}$ when the resonator and the line are impedance-matched and show that this sensitivity can be further improved to $31~μe / \sqrt{\text{Hz}}$ by re-tuning the resonator. We understand this improvement by using an equivalent circuit model and demonstrate that for maximum sensitivity to capacitance changes, in addition to impedance matching, a high-quality resonator with low parasitic capacitance is desired.
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Submitted 27 March, 2019; v1 submitted 20 July, 2018;
originally announced July 2018.
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Strongly correlated charge transport in silicon MOSFET quantum dots
Authors:
Minky Seo,
Preden Roulleau,
Patrice Roche,
D. Christian Glattli,
Marc Sanquer,
Xavier Jehl,
Louis Hutin,
Sylvain Barraud,
Francois D. Parmentier
Abstract:
Quantum shot noise probes the dynamics of charge transfers through a quantum conductor, reflecting whether quasiparticles flow across the conductor in a steady stream, or in syncopated bursts. We have performed high-sensitivity shot noise measurements in a quantum dot obtained in a silicon metal-oxide-semiconductor field-effect transistor. The quality of our device allows us to precisely associate…
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Quantum shot noise probes the dynamics of charge transfers through a quantum conductor, reflecting whether quasiparticles flow across the conductor in a steady stream, or in syncopated bursts. We have performed high-sensitivity shot noise measurements in a quantum dot obtained in a silicon metal-oxide-semiconductor field-effect transistor. The quality of our device allows us to precisely associate the different transport regimes and their statistics with the internal state of the quantum dot. In particular, we report on large current fluctuations in the inelastic cotunneling regime, corresponding to different highly-correlated, non-Markovian charge transfer processes. We have also observed unusually large current fluctuations at low energy in the elastic cotunneling regime, the origin of which remains to be fully investigated.
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Submitted 12 July, 2018; v1 submitted 22 May, 2018;
originally announced May 2018.
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Electric-field tuning of the valley splitting in silicon corner dots
Authors:
David J. Ibberson,
Léo Bourdet,
José C. Abadillo-Uriel,
Imtiaz Ahmed,
Sylvain Barraud,
María J. Calderón,
Yann-Michel Niquet,
M. Fernando Gonzalez-Zalba
Abstract:
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between a single quantum dot and a double quantum dot in parallel that allows tuning the device in to corner dot formation. We find a linear dependence of the valley s…
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We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between a single quantum dot and a double quantum dot in parallel that allows tuning the device in to corner dot formation. We find a linear dependence of the valley splitting on back-gate voltage, from $880~μ\text{eV}$ to $610~μ\text{eV}$ with a slope of $-45\pm 3~μ\text{eV/V}$ (or equivalently a slope of $-48\pm 3~μ\text{eV/(MV/m)}$ with respect to the effective field). The experimental results are backed up by tight-binding simulations that include the effect of surface roughness, remote charges in the gate stack and discrete dopants in the channel. Our results demonstrate a way to electrically tune the valley splitting in silicon-on-insulator-based quantum dots, a requirement to achieve all-electrical manipulation of silicon spin qubits.
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Submitted 23 July, 2018; v1 submitted 21 May, 2018;
originally announced May 2018.
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Primary thermometry of a single reservoir using cyclic electron tunneling in a CMOS transistor
Authors:
Imtiaz Ahmed,
Anasua Chatterjee,
Sylvain Barraud,
John J. L. Morton,
James A. Haigh,
M. Fernando Gonzalez-Zalba
Abstract:
Temperature is a fundamental parameter in the study of physical phenomena. At the nanoscale, local temperature differences can be harnessed to design novel thermal nanoelectronic devices or test quantum thermodynamical concepts. Determining temperature locally is hence of particular relevance. Here, we present a primary electron thermometer that allows probing the local temperature of a single ele…
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Temperature is a fundamental parameter in the study of physical phenomena. At the nanoscale, local temperature differences can be harnessed to design novel thermal nanoelectronic devices or test quantum thermodynamical concepts. Determining temperature locally is hence of particular relevance. Here, we present a primary electron thermometer that allows probing the local temperature of a single electron reservoir in single-electron devices. The thermometer is based on cyclic electron tunneling between a system with discrete energy levels and a single electron reservoir. When driven at a finite rate, close to a charge degeneracy point, the system behaves like a variable capacitor whose magnitude and line-shape varies with temperature. In this experiment, we demonstrate this type of thermometer using a quantum dot in a CMOS nanowire transistor. We drive cyclic electron tunneling by embedding the device in a radio-frequency resonator which in turn allows us to read the thermometer dispersively. We find that the full width at half maximum of the resonator phase response depends linearly with temperature via well known physical law by using the ratio $k_\text{B}/e$ between the Boltzmann constant and the electron charge. Overall, the thermometer shows potential for local probing of fast heat dynamics in nanoelectronic devices and for seamless integration with silicon-based quantum circuits.
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Submitted 30 May, 2018; v1 submitted 9 May, 2018;
originally announced May 2018.
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Electrical spin driving by $g$-matrix modulation in spin-orbit qubits
Authors:
Alessandro Crippa,
Romain Maurand,
Léo Bourdet,
Dharmraj Kotekar-Patil,
Anthony Amisse,
Xavier Jehl,
Marc Sanquer,
Romain Laviéville,
Heorhii Bohuslavskyi,
Louis Hutin,
Sylvain Barraud,
Maud Vinet,
Yann-Michel Niquet,
Silvano De Franceschi
Abstract:
In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency as well as the gate-…
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In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency as well as the gate-voltage dependence and anisotropy of the hole $g$-factors. We show that a $g$-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the $g$ factors, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits.
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Submitted 4 April, 2018; v1 submitted 24 October, 2017;
originally announced October 2017.
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A silicon-based single-electron interferometer coupled to a fermionic sea
Authors:
Anasua Chatterjee,
Sergey N. Shevchenko,
Sylvain Barraud,
Ruben M. Otxoa,
Franco Nori,
John J. L. Morton,
M. Fernando Gonzalez-Zalba
Abstract:
We study Landau-Zener-Stueckelberg-Majorana (LZSM) interferometry under the influence of projective readout using a charge qubit tunnel-coupled to a fermionic sea. This allows us to characterise the coherent charge qubit dynamics in the strong-driving regime. The device is realised within a silicon complementary metal-oxide-semiconductor (CMOS) transistor. We first read out the charge state of the…
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We study Landau-Zener-Stueckelberg-Majorana (LZSM) interferometry under the influence of projective readout using a charge qubit tunnel-coupled to a fermionic sea. This allows us to characterise the coherent charge qubit dynamics in the strong-driving regime. The device is realised within a silicon complementary metal-oxide-semiconductor (CMOS) transistor. We first read out the charge state of the system in a continuous non-demolition manner by measuring the dispersive response of a high-frequency electrical resonator coupled to the quantum system via the gate. By performing multiple fast passages around the qubit avoided crossing, we observe a multi-passage LZSM interferometry pattern. At larger driving amplitudes, a projective measurement to an even-parity charge state is realised, showing a strong enhancement of the dispersive readout signal. At even larger driving amplitudes, two projective measurements are realised within the coherent evolution resulting in the disappearance of the interference pattern. Our results demonstrate a way to increase the state readout signal of coherent quantum systems and replicate single-electron analogues of optical interferometry within a CMOS transistor.
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Submitted 31 August, 2017;
originally announced August 2017.
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Conditional dispersive readout of a CMOS quantum dot via an integrated transistor circuit
Authors:
S. Schaal,
S. Barraud,
J. J. L. Morton,
M. F. Gonzalez-Zalba
Abstract:
Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offer potential solutions to wiring and layout challenges. Integrating classical and quantum d…
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Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offer potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-transistor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large scale circuits. Here we demonstrate the integration of a single-electron charge storage CMOS quantum dot with a CMOS transistor for control of the readout via gate-based dispersive sensing using a lumped element $LC$ resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully-depleted silicon-on-insulator technology. We obtain a charge sensitivity of $δq=165\, μe \mathrm{Hz}^{-1/2}$ when the quantum dot readout is enabled by the control FET. Additionally, we observe a single-electron retention time of the order of a second when storing a single-electron charge on the quantum dot at milli-Kelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive qubit readout in CMOS technology opening the path for the development of an all-silicon quantum-classical processor.
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Submitted 14 August, 2017;
originally announced August 2017.
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Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
Authors:
Andrea Corna,
Léo Bourdet,
Romain Maurand,
Alessandro Crippa,
Dharmraj Kotekar-Patil,
Heorhii Bohuslavskyi,
Romain Lavieville,
Louis Hutin,
Sylvain Barraud,
Xavier Jehl,
Maud Vinet,
Silvano De Franceschi,
Yann-Michel Niquet,
Marc Sanquer
Abstract:
The ability to manipulate electron spins with voltage-dependent electric fields is key to the operation of quantum spintronics devices, such as spin-based semiconductor qubits. A natural approach to electrical spin control exploits the spin-orbit coupling (SOC) inherently present in all materials. So far, this approach could not be applied to electrons in silicon, due to their extremely weak SOC.…
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The ability to manipulate electron spins with voltage-dependent electric fields is key to the operation of quantum spintronics devices, such as spin-based semiconductor qubits. A natural approach to electrical spin control exploits the spin-orbit coupling (SOC) inherently present in all materials. So far, this approach could not be applied to electrons in silicon, due to their extremely weak SOC. Here we report an experimental realization of electrically driven electron-spin resonance in a silicon-on-insulator (SOI) nanowire quantum dot device. The underlying driving mechanism results from an interplay between SOC and the multi-valley structure of the silicon conduction band, which is enhanced in the investigated nanowire geometry. We present a simple model capturing the essential physics and use tight-binding simulations for a more quantitative analysis. We discuss the relevance of our findings to the development of compact and scalable electron-spin qubits in silicon.
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Submitted 7 February, 2018; v1 submitted 9 August, 2017;
originally announced August 2017.
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Spin-orbit dynamics of single acceptor atoms in silicon
Authors:
J. van der Heijden,
T. Kobayashi,
M. G. House,
J. Salfi,
S. Barraud,
R. Lavieville,
M. Y. Simmons,
S. Rogge
Abstract:
Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of particular interest for scalable quantum information technologies. In silicon, a strong spin-orbit coupling exists within the spin-3/2 system of acceptor atoms and their energy levels and properties are expected to be hi…
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Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of particular interest for scalable quantum information technologies. In silicon, a strong spin-orbit coupling exists within the spin-3/2 system of acceptor atoms and their energy levels and properties are expected to be highly tunable. Here we show the influence of local symmetry tuning on the acceptor spin-dynamics, measured in the single-atom regime. Spin-selective tunneling between two coupled boron atoms in a commercial CMOS transistor is utilised for spin-readout, which allows for the probing of the two-hole spin relaxation mechanisms. A relaxation-hotspot is measured and explained by the mixing of acceptor heavy and light hole states. Furthermore, excited state spectroscopy indicates a magnetic field controlled rotation of the quantization axes of the atoms. These observations demonstrate the tunability of the spin-orbit states and dynamics of this spin-3/2 system.
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Submitted 9 March, 2017;
originally announced March 2017.
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Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
Authors:
P. Clapera,
J. Klochan,
R. Lavieville,
S. Barraud,
L. Hutin,
M. Sanquer,
M. Vinet,
A. Cinins,
G. Barinovs,
V. Kashcheyevs,
X. Jehl
Abstract:
We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300 mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40 nm) nitride space…
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We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300 mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40 nm) nitride spacers. As a result a single, silicided island gets isolated between the gates and transport is dominated by Coulomb blockade at cryogenic temperatures thanks to the small size and therefore capacitance of this island. Operation and performances comparable to devices featuring e-beam lithography is demonstrated in the non-adiabatic pumping regime, with a pumping frequency up to 300 MHz. We also identify and model signatures of charge traps affecting charge pumping in the adiabatic regime. The availability of quantized current references in a process close to the 28FDSOI technology could trigger new applications for these pumps and allow to cointegrate them with cryogenic CMOS circuits, for instance in the emerging field of interfaces with quantum bits.
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Submitted 30 December, 2016;
originally announced December 2016.
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Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry
Authors:
Alessandro Crippa,
Romain Maurand,
Dharmraj Kotekar-Patil,
Andrea Corna,
Heorhii Bohuslavskyi,
Alexei O. Orlov,
Patrick Fay,
Romain Laviéville,
Silvain Barraud,
Maud Vinet,
Marc Sanquer,
Silvano De Franceschi,
Xavier Jehl
Abstract:
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively connected to the two gate electrodes. By simultaneously measuring their dispersive response, we obtain the complete charge stability diagram of the device. Char…
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We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively connected to the two gate electrodes. By simultaneously measuring their dispersive response, we obtain the complete charge stability diagram of the device. Charge transitions between the two quantum dots and between each quantum dot and either the source or the drain contact are detected through phase shifts in the reflected radio-frequency signals. At finite bias, reflectometry allows probing charge transitions to excited quantum-dot states thereby enabling direct access to the energy level spectra of the quantum dots. Interestingly, we find that in the presence of charge transport across the two dots the reflectometry signatures of interdot transitions display a dip-peak structure containing quantitative information on the charge relaxation rates in the double quantum dot.
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Submitted 19 January, 2017; v1 submitted 12 October, 2016;
originally announced October 2016.
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Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction
Authors:
Heorhii Bohuslavskyi,
Dharmraj Kotekar-Patil,
Romain Maurand,
Andrea Corna,
Sylvain Barraud,
Leo Bourdet,
Louis Hutin,
Yann-Michel Niquet,
Xavier Jehl,
Silvano De Franceschi,
Maud Vinet,
Marc Sanquer
Abstract:
We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to spin qubit implementations.
A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate $\approx$120\,kHz…
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We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to spin qubit implementations.
A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate $\approx$120\,kHz for the first holes, an important step towards a robust hole spin-orbit qubit.
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Submitted 22 September, 2016; v1 submitted 1 July, 2016;
originally announced July 2016.
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Pauli spin blockade in CMOS double quantum dot devices
Authors:
D. Kotekar-Patil,
A. Corna,
R. Maurand,
A. Crippa,
A. Orlov,
S. Barraud,
X. Jehl,
S. De Franceschi,
M. Sanquer
Abstract:
Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on transport experiments in double gate nanowire transistors issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low temperature the devices behave as…
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Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on transport experiments in double gate nanowire transistors issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low temperature the devices behave as two few-electron quantum dots in series. We observe signatures of Pauli spin blockade with a singlet-triplet splitting ranging from 0.3 to 1.3 meV. Magneto-transport measurements show that transitions which conserve spin are shown to be magnetic-field independent up to B = 6 T.
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Submitted 24 April, 2017; v1 submitted 19 June, 2016;
originally announced June 2016.
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A CMOS silicon spin qubit
Authors:
R. Maurand,
X. Jehl,
D. Kotekar Patil,
A. Corna,
H. Bohuslavskyi,
R. Laviéville,
L. Hutin,
S. Barraud,
M. Vinet,
M. Sanquer,
S. De Franceschi
Abstract:
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silic…
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Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot (QD) encoding a hole spin qubit, the second one a QD used for the qubit readout. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. Our result opens a viable path to qubit up-scaling through a readily exploitable CMOS platform.
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Submitted 24 May, 2016;
originally announced May 2016.
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Dopant-controlled single-electron pumping through a metallic island
Authors:
Tobias Wenz,
Frank Hohls,
Xavier Jehl,
Marc Sanquer,
Sylvain Barraud,
Jevgeny Klochan,
Girts Barinovs,
Vyacheslavs Kashcheyevs
Abstract:
We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used control the resonance conditions. Applying radio frequency signals to the gates,…
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We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations.
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Submitted 1 March, 2016;
originally announced March 2016.
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Contact resistances in trigate and FinFET devices in a Non-Equilibrium Green's Functions approach
Authors:
Léo Bourdet,
Johan Pelloux-Prayer,
François Triozon,
Mikaël Cassé,
Sylvain Barraud,
Sébastien Martinie,
Denis Rideau,
Yann-Michel Niquet
Abstract:
We compute the contact resistances $R_{\rm c}$ in trigate and FinFET devices with widths and heights in the 4 to 24 nm range using a Non-Equilibrium Green's Functions approach. Electron-phonon, surface roughness and Coulomb scattering are taken into account. We show that $R_{\rm c}$ represents a significant part of the total resistance of devices with sub-30 nm gate lengths. The analysis of the qu…
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We compute the contact resistances $R_{\rm c}$ in trigate and FinFET devices with widths and heights in the 4 to 24 nm range using a Non-Equilibrium Green's Functions approach. Electron-phonon, surface roughness and Coulomb scattering are taken into account. We show that $R_{\rm c}$ represents a significant part of the total resistance of devices with sub-30 nm gate lengths. The analysis of the quasi-Fermi level profile reveals that the spacers between the heavily doped source/drain and the gate are major contributors to the contact resistance. The conductance is indeed limited by the poor electrostatic control over the carrier density under the spacers. We then disentangle the ballistic and diffusive components of $R_{\rm c}$, and analyze the impact of different design parameters (cross section and doping profile in the contacts) on the electrical performances of the devices. The contact resistance and variability rapidly increase when the cross sectional area of the channel goes below $\simeq 50$ nm$^2$. We also highlight the role of the charges trapped at the interface between silicon and the spacer material.
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Submitted 24 February, 2016;
originally announced February 2016.
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Gate-sensing coherent charge oscillations in a silicon field-effect transistor
Authors:
M. Fernando Gonzalez-Zalba,
Sergey N. Shevchenko,
Sylvain Barraud,
J. Robert Johansson,
Andrew J. Ferguson,
Franco Nori,
Andreas C. Betz
Abstract:
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunnelling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge o…
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Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunnelling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio-frequency resonant circuit coupled via the gate. Differential capacitance changes at the inter-dot charge transitions allow us to monitor the state of the system in the strong-driving regime where we observe the emergence of Landau-Zener-St{ü}ckelberg-Majorana interference on the phase response of the resonator. A theoretical analysis of the dispersive signal demonstrates that quantum and tunnelling capacitance changes must be included to describe the qubit-resonator interaction. Furthermore, a Fourier analysis of the interference pattern reveals a charge coherence time, $T_2\approx 100$~ps. Our results demonstrate charge coherent control and readout in a simple silicon transistor and open up the possibility to implement charge and spin qubits in existing CMOS technology.
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Submitted 18 February, 2016;
originally announced February 2016.
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Electrical control of g-factors in a few-hole silicon nanowire MOSFET
Authors:
B. Voisin,
R. Maurand,
S. Barraud,
M. Vinet,
X. Jehl,
M. Sanquer,
J. Renard,
S. De Franceschi
Abstract:
Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole qua…
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Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically-driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred MHz.
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Submitted 25 November, 2015;
originally announced November 2015.
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Design and cryogenic operation of a hybrid quantum-CMOS circuit
Authors:
P. Clapera,
X. Jehl,
A. Corna,
S. J. Ray,
M. Sanquer,
A. Valentian,
S. Barraud
Abstract:
Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for larger dimensions, allowing to design integrated circuits. Using the same process, we have co-integrated a FET-based ring oscillator circuit operating at cryogenic t…
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Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for larger dimensions, allowing to design integrated circuits. Using the same process, we have co-integrated a FET-based ring oscillator circuit operating at cryogenic temperature which generates a radio-frequency (RF) signal on the gate of a nanoscale device showing Coulomb oscillations. We observe rectification of the RF signal, in good agreement with modeling.
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Submitted 13 March, 2015;
originally announced March 2015.
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Charge dynamics and spin blockade in a hybrid double quantum dot in silicon
Authors:
M. Urdampilleta,
A. Chatterjee,
C. C. Lo,
T. Kobayashi,
J. Mansir,
S. Barraud,
A. C. Betz,
S. Rogge,
M. F. Gonzalez-Zalba,
J. J. L. Morton
Abstract:
Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfin…
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Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability and scalability. Here we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterise the charge dynamics, which reveals a charge T2* of 200 ps and a relaxation time T1 of 100 ns. Additionally, we demonstrate spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus.
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Submitted 19 March, 2015; v1 submitted 3 March, 2015;
originally announced March 2015.
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A high-sensitivity gate-based charge sensor in silicon
Authors:
M. F. Gonzalez-Zalba,
A. J. Ferguson,
S. Barraud,
A. C. Betz
Abstract:
The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in enabling spin qubit experiments in all-electrical, semiconductor based quantum computing. As experiments grow more sophisticated, and head towards multiple qubit arch…
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The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in enabling spin qubit experiments in all-electrical, semiconductor based quantum computing. As experiments grow more sophisticated, and head towards multiple qubit architectures that enable small scale computation, it becomes important to consider the charge read-out overhead. With this in mind, Reilly et al. demonstrated a gate readout scheme in a GaAs double quantum dot that removed the need for an external charge sensor. This readout, which achieved sensitivities of order me/$\sqrt(Hz)$, was enabled by using a resonant circuit to probe the complex radio-frequency polarisability of the double quantum dot. However, the ultimate performance of this technology and the noise sources that limit it remain to be determined. Here, we investigate a gate-based readout scheme using a radio-frequency resonant circuit strongly coupled to a double quantum at the corner states of a silicon nanowire transistor. We find a significantly improved charge sensitivity of 37 $μ$e/$\sqrt(Hz)$. By solving the dynamical master equation of the fast-driven electronic transitions we quantify the noise spectral density and determine the ultimate charge and phase sensitivity of gate-based read-out. We find comparable performance to conventional charge sensors and fundamental limits of order ne/$\sqrt(Hz)$ and $μ$rad/$\sqrt(Hz)$, with the gate-based sensor improving on standard detection for certain device parameters. Our results show that, especially in state-of-the-art silicon qubit architectures, charge detection by probing the complex polarisability has advantages in terms of reducing the readout overhead but also in terms of the absolute charge sensitivity.
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Submitted 12 May, 2014;
originally announced May 2014.
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Thermionic charge transport in CMOS nano-transistors
Authors:
A. C. Betz,
S. Barraud,
Q. Wilmart,
B. Plaçais,
X. Jehl,
M. Sanquer,
M. F. Gonzalez - Zalba
Abstract:
We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically ove…
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We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature is accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature.
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Submitted 10 December, 2013;
originally announced December 2013.
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A Pearson Effective Potential for Monte-Carlo simulation of quantum confinement effects in various MOSFET architectures
Authors:
M. -A. Jaud,
S. Barraud,
P. Dollfus,
H. Jaouen
Abstract:
A Pearson Effective Potential model for including quantization effects in the simulation of nanoscale nMOSFETs has been developed. This model, based on a realistic description of the function representing the non zero-size of the electron wave packet, has been used in a Monte-Carlo simulator for bulk, single gate SOI and double-gate SOI devices. In the case of SOI capacitors, the electron densit…
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A Pearson Effective Potential model for including quantization effects in the simulation of nanoscale nMOSFETs has been developed. This model, based on a realistic description of the function representing the non zero-size of the electron wave packet, has been used in a Monte-Carlo simulator for bulk, single gate SOI and double-gate SOI devices. In the case of SOI capacitors, the electron density has been computed for a large range of effective field (between 0.1 MV/cm and 1 MV/cm) and for various silicon film thicknesses (between 5 nm and 20 nm). A good agreement with the Schroedinger-Poisson results is obtained both on the total inversion charge and on the electron density profiles. The ability of an Effective Potential approach to accurately reproduce electrostatic quantum confinement effects is clearly demonstrated.
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Submitted 28 August, 2008;
originally announced August 2008.
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Effect of discrete impurities on electron transport in ultra-short MOSFET using 3D Monte Carlo simulation
Authors:
P. Dollfus,
A. Bournel,
S. Galdin,
S. Barraud,
P. Hesto
Abstract:
This paper discusses the influence of the channel impurity distribution on the transport and the drive current in short-gate MOSFET. In this purpose, a careful description of electron-ion interaction suitable for the case of discrete impurities has been implemented in a 3D particle Monte Carlo simulator. This transport model is applied to the investigation of 50 nm MOSFET operation. The results…
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This paper discusses the influence of the channel impurity distribution on the transport and the drive current in short-gate MOSFET. In this purpose, a careful description of electron-ion interaction suitable for the case of discrete impurities has been implemented in a 3D particle Monte Carlo simulator. This transport model is applied to the investigation of 50 nm MOSFET operation. The results show that a small change in the number of doping impurities or in the position of a single discrete impurity in the inversion layer may significantly influence the drain current. This effect is not only related to threshold voltage fluctuations but also to variations in transport properties in the inversion layer, especially at high drain voltage. The results are analyzed in terms of local fluctuations of electron velocity and current density. In a set of fifteen simulated devices the drive current Ion, determined at VGS = VDS = 0.6 V, is found to vary in a range of 23% according to the position of channel impurities.
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Submitted 23 February, 2004; v1 submitted 30 October, 2003;
originally announced October 2003.
