Skip to main content
We gratefully acknowledge support from the Simons Foundation, member institutions, and all contributors. Donate
arXiv logo
Cornell University Logo

Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:cond-mat/0310718 (cond-mat)
[Submitted on 30 Oct 2003 (v1), last revised 23 Feb 2004 (this version, v2)]

Title:Effect of discrete impurities on electron transport in ultra-short MOSFET using 3D Monte Carlo simulation

Authors:P. Dollfus, A. Bournel, S. Galdin, S. Barraud, P. Hesto
View PDF
Abstract: This paper discusses the influence of the channel impurity distribution on the transport and the drive current in short-gate MOSFET. In this purpose, a careful description of electron-ion interaction suitable for the case of discrete impurities has been implemented in a 3D particle Monte Carlo simulator. This transport model is applied to the investigation of 50 nm MOSFET operation. The results show that a small change in the number of doping impurities or in the position of a single discrete impurity in the inversion layer may significantly influence the drain current. This effect is not only related to threshold voltage fluctuations but also to variations in transport properties in the inversion layer, especially at high drain voltage. The results are analyzed in terms of local fluctuations of electron velocity and current density. In a set of fifteen simulated devices the drive current Ion, determined at VGS = VDS = 0.6 V, is found to vary in a range of 23% according to the position of channel impurities.
Comments: 31 pages, 13 figures, revised version: discussions and references added, to be published in IEEE Trans. Electron. Devices
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:cond-mat/0310718 [cond-mat.mes-hall]
  (or arXiv:cond-mat/0310718v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0310718
Journal reference: IEEE Trans. Electron Devices 51 (5), 749-756 (2004)
Related DOI: https://doi.org/10.1109/TED.2004.826844

Submission history

From: Arnaud Bournel [view email]
[v1] Thu, 30 Oct 2003 08:51:58 UTC (188 KB)
[v2] Mon, 23 Feb 2004 12:58:55 UTC (188 KB)
Full-text links:

Access Paper:

  • View PDF
  • Other Formats
view license
Current browse context:
cond-mat.mes-hall
< prev   |   next >
new | recent | 2003-10

References & Citations

export BibTeX citation

Bookmark

BibSonomy logo Reddit logo

Bibliographic and Citation Tools

Bibliographic Explorer (What is the Explorer?)
Connected Papers (What is Connected Papers?)
Litmaps (What is Litmaps?)
scite Smart Citations (What are Smart Citations?)

Code, Data and Media Associated with this Article

alphaXiv (What is alphaXiv?)
CatalyzeX Code Finder for Papers (What is CatalyzeX?)
DagsHub (What is DagsHub?)
Gotit.pub (What is GotitPub?)
Hugging Face (What is Huggingface?)
Papers with Code (What is Papers with Code?)
ScienceCast (What is ScienceCast?)

Demos

Replicate (What is Replicate?)
Hugging Face Spaces (What is Spaces?)
TXYZ.AI (What is TXYZ.AI?)

Recommenders and Search Tools

Influence Flower (What are Influence Flowers?)
CORE Recommender (What is CORE?)
IArxiv Recommender (What is IArxiv?)

arXivLabs: experimental projects with community collaborators

arXivLabs is a framework that allows collaborators to develop and share new arXiv features directly on our website.

Both individuals and organizations that work with arXivLabs have embraced and accepted our values of openness, community, excellence, and user data privacy. arXiv is committed to these values and only works with partners that adhere to them.

Have an idea for a project that will add value for arXiv's community? Learn more about arXivLabs.

Which authors of this paper are endorsers? | Disable MathJax (What is MathJax?)