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Symmetry Enhanced Unconventional Spin Current Anisotropy in a Collinear Antiferromagnet
Authors:
Pankhuri Gupta,
Kacho Imtiyaz Ali Khan,
Akash Kumar,
Rekha Agarwal,
Nidhi Kandwal,
Ram Singh Yadav,
Johan Åkerman,
Pranaba Kishor Muduli
Abstract:
Spin-orbit torque (SOT) presents a promising avenue for energy-efficient spintronics devices, surpassing the limitations of spin transfer torque. While extensively studied in heavy metals, SOT in antiferromagnetic quantum materials remains largely unexplored. Here, we investigate SOT in epitaxial FeSn, a collinear antiferromagnet with a kagome lattice. FeSn exhibits intriguing topological quantum…
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Spin-orbit torque (SOT) presents a promising avenue for energy-efficient spintronics devices, surpassing the limitations of spin transfer torque. While extensively studied in heavy metals, SOT in antiferromagnetic quantum materials remains largely unexplored. Here, we investigate SOT in epitaxial FeSn, a collinear antiferromagnet with a kagome lattice. FeSn exhibits intriguing topological quantum features, including two-dimensional flat bands and Dirac-like surface states, making it an ideal platform for investigating emergent SOT properties. Using spin-torque ferromagnetic resonance, we uncover a six-fold symmetric damping-like SOT in epitaxial-FeSn/Py heterostructures, reflecting the six-fold symmetry of the epitaxial [0001]-oriented FeSn films. Additionally, we observe a substantial unconventional field-like torque, originating from spin currents with out-of-plane spin polarization. This torque exhibits a unique angular dependence-a superposition of six-fold crystalline symmetry and uniaxial symmetry associated with the antiferromagnetic spin Hall effect. Notably, the unconventional field-like torque is enhanced when the RF current flows along the Neel vector in FeSn. Our findings reveal an unconventional spin current anisotropy tunable by crystalline and magnetic symmetry, offering a novel approach for controlling SOT in antiferromagnetic spintronics.
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Submitted 31 March, 2025; v1 submitted 26 March, 2025;
originally announced March 2025.
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Strong Chirality Suppression in 1-D correlated Weyl Semimetal (TaSe4)2I
Authors:
Utkarsh Khandelwal,
Harshvardhan Jog,
Shupeng Xu,
Yicong Chen,
Kejian Qu,
Chengxi Zhao,
Eugene Mele,
Daniel P. Shoemaker,
Ritesh Agarwal
Abstract:
The interaction of light with correlated Weyl semimetals (WSMs) provides a unique platform for exploring non-equilibrium phases and fundamental properties such as chirality. Here, we investigate the structural chirality of (TaSe4)2I, a correlated WSM, under weak optical pumping using Circular Photogalvanic Effect (CPGE) measurements and Raman spectroscopy. Surprisingly, we find that there is a los…
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The interaction of light with correlated Weyl semimetals (WSMs) provides a unique platform for exploring non-equilibrium phases and fundamental properties such as chirality. Here, we investigate the structural chirality of (TaSe4)2I, a correlated WSM, under weak optical pumping using Circular Photogalvanic Effect (CPGE) measurements and Raman spectroscopy. Surprisingly, we find that there is a loss of chirality in (TaSe4)2I above a threshold light intensity. We suggest that the loss of chirality is due to an optically driven phase transition into an achiral structure distinct from the ground state. This structural transformation is supported by fluence-dependent Raman spectra, revealing a new peak at low pump fluences that disappears above the threshold fluence. The loss of chirality even at low optical powers suggests that the system quickly transitions into a non WSM phase, and also highlights the importance of considering light-induced structural interactions in understanding the behavior of correlated systems. These studies showcase that even low excitation powers can be used to control the properties of correlated topological systems, opening up new avenues for low power optical devices.
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Submitted 28 May, 2024;
originally announced May 2024.
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Simple realization of a fragile topological lattice with quasi flat-bands in a microcavity array
Authors:
Yuhui Wang,
Shupeng Xu,
Liang Feng,
Ritesh Agarwal
Abstract:
Topological flat bands (TFBs) are increasingly recognized as an important paradigm to study topological effects in the context of strong correlation physics. As a representative example, recently it has been theoretically proposed that the topological non-triviality offers a unique contribution to flat-band superconductivity, which can potentially lead to a higher critical temperature of supercond…
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Topological flat bands (TFBs) are increasingly recognized as an important paradigm to study topological effects in the context of strong correlation physics. As a representative example, recently it has been theoretically proposed that the topological non-triviality offers a unique contribution to flat-band superconductivity, which can potentially lead to a higher critical temperature of superconductivity phase transition. Nevertheless, the topological effects within flat bands in bosonic systems, specifically in the context of Bose-Einstein condensation (BEC), are less explored. It has been shown theoretically that non-trivial topological and geometric properties will also have a significant influence in bosonic condensates as well. However, potential experimental realizations have not been extensively studied yet. In this work, we introduce a simple photonic lattice from coupled Kagome and triangular lattices designed based on topological quantum chemistry theory, which supports topologically nontrivial quasi-flat bands. Besides band representation analysis, the non-triviality of these quasi-flat bands is also confirmed by Wilson loop spectra which exhibit winding features. We further discuss the corresponding experimental realization in a microcavity array for future study supporting the potential extension to condensed exciton-polaritons. Notably, we showed that the inevitable in-plane longitudinal-transverse polarization splitting in optical microcavities will not hinder the construction of topological quasi-flat bands. This work acts as an initial step to experimentally explore the physical consequence of non-trivial topology and quantum geometry in quasi-flat bands in bosonic systems, offering potential channels for its direct observation.
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Submitted 14 February, 2024;
originally announced February 2024.
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Opto-twistronic Hall effect in a three-dimensional spiral lattice
Authors:
Zhurun Ji,
Yuzhou Zhao,
Yicong Chen,
Ziyan Zhu,
Yuhui Wang,
Wenjing Liu,
Gaurav Modi,
Eugene J. Mele,
Song Jin,
Ritesh Agarwal
Abstract:
Studies of moire systems have elucidated the exquisite effect of quantum geometry on the electronic bands and their properties, leading to the discovery of new correlated phases. However, most experimental studies have been confined to a few layers in the 2D limit. The extension of twistronics to its 3D limit, where the twist is extended into the third dimension between adjacent layers, remains un…
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Studies of moire systems have elucidated the exquisite effect of quantum geometry on the electronic bands and their properties, leading to the discovery of new correlated phases. However, most experimental studies have been confined to a few layers in the 2D limit. The extension of twistronics to its 3D limit, where the twist is extended into the third dimension between adjacent layers, remains underexplored due to the challenges in precisely stacking layers. Here, we focus on 3D twistronics on a platform of self-assembled spiral superlattice of multilayered WS2. Our findings reveal an opto-twistronic Hall effect in the spiral superlattice. This mesoscopic response is an experimental manifestation of the noncommutative geometry that arises when translational symmetry is replaced by a non-symmorphic screw operation. We also discover signatures of altered laws of optical excitation, manifested as an unconventional photon momentum-lattice interaction owing to moire of moire modulations in the 3D twistronic system. Crucially, our findings mark the initial identification of higher-order quantum geometrical tensors in light-matter interactions. This breakthrough opens new avenues for designing quantum materials-based optical lattices with large nonlinearities, paving the way for the development of advanced quantum nanophotonic devices.
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Submitted 18 December, 2023;
originally announced December 2023.
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Learning and Controlling Silicon Dopant Transitions in Graphene using Scanning Transmission Electron Microscopy
Authors:
Max Schwarzer,
Jesse Farebrother,
Joshua Greaves,
Ekin Dogus Cubuk,
Rishabh Agarwal,
Aaron Courville,
Marc G. Bellemare,
Sergei Kalinin,
Igor Mordatch,
Pablo Samuel Castro,
Kevin M. Roccapriore
Abstract:
We introduce a machine learning approach to determine the transition dynamics of silicon atoms on a single layer of carbon atoms, when stimulated by the electron beam of a scanning transmission electron microscope (STEM). Our method is data-centric, leveraging data collected on a STEM. The data samples are processed and filtered to produce symbolic representations, which we use to train a neural n…
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We introduce a machine learning approach to determine the transition dynamics of silicon atoms on a single layer of carbon atoms, when stimulated by the electron beam of a scanning transmission electron microscope (STEM). Our method is data-centric, leveraging data collected on a STEM. The data samples are processed and filtered to produce symbolic representations, which we use to train a neural network to predict transition probabilities. These learned transition dynamics are then leveraged to guide a single silicon atom throughout the lattice to pre-determined target destinations. We present empirical analyses that demonstrate the efficacy and generality of our approach.
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Submitted 21 November, 2023;
originally announced November 2023.
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Optically induced symmetry breaking due to nonequilibrium steady state formation in charge density wave material 1T-TiSe2
Authors:
Harshvardhan Jog,
Luminita Harnagea,
Dibyata Rout,
Takashi Taniguchi,
Kenji Watanabe,
Eugene J. Mele,
Ritesh Agarwal
Abstract:
The strongly correlated charge density wave (CDW) phase of 1T-TiSe$_2$ is being extensively researched to verify the claims of a unique chiral order due to the presence of three equivalent Fermi wavevectors involved in the CDW formation. Characterization of the symmetries is therefore critical to understand the origin of their intriguing properties but can be complicated by the coupling of the ele…
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The strongly correlated charge density wave (CDW) phase of 1T-TiSe$_2$ is being extensively researched to verify the claims of a unique chiral order due to the presence of three equivalent Fermi wavevectors involved in the CDW formation. Characterization of the symmetries is therefore critical to understand the origin of their intriguing properties but can be complicated by the coupling of the electronic and lattice degrees of freedom. Here we use continuous wave laser excitation to probe the symmetries of TiSe$_2$ using the circular photogalvanic effect with very high sensitivity. We observe that the ground state of the CDW phase is achiral. However, laser excitation above a threshold intensity transforms TiSe$_2$ into a chiral phase in a nonequilibrium steady state, which changes the electronic correlations in the stacking direction of the layered material. The inherent sensitivity of the photogalvanic technique provides clear evidence of the different optically driven phases of 1T-TiSe$_2$, as well as emphasizes the interplay of electronic and lattice degrees of freedom in this system under optical excitation. Our work demonstrates that optically induced phase change can occur at extremely low optical intensities in strongly correlated materials, providing a pathway for future studies to engineer new phases using light.
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Submitted 19 November, 2023; v1 submitted 25 April, 2023;
originally announced April 2023.
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Absence of topological protection of the interface states in $\mathbb{Z}_2$ photonic crystals
Authors:
Shupeng Xu,
Yuhui Wang,
Ritesh Agarwal
Abstract:
Inspired from electronic systems, topological photonics aims to engineer new optical devices with robust properties. In many cases, the ideas from topological phases protected by internal symmetries in fermionic systems are extended to those protected by crystalline symmetries. One such popular photonic crystal model was proposed by Wu and Hu in 2015 for realizing a bosonic $\mathbb{Z}_2$ topologi…
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Inspired from electronic systems, topological photonics aims to engineer new optical devices with robust properties. In many cases, the ideas from topological phases protected by internal symmetries in fermionic systems are extended to those protected by crystalline symmetries. One such popular photonic crystal model was proposed by Wu and Hu in 2015 for realizing a bosonic $\mathbb{Z}_2$ topological crystalline insulator with robust topological edge states, which led to intense theoretical and experimental studies. However, rigorous relationship between the bulk topology and edge properties for this model, which is central to evaluating its advantage over traditional photonic designs, has never been established. In this work we revisit the expanded and shrunken honeycomb lattice structures proposed by Wu and Hu by using topological quantum chemistry tools and show that they are topologically trivial in the sense that symmetric, localized Wannier functions can be constructed. We show that the $\mathbb{Z}$ and $\mathbb{Z}_2$ type classification of the Wu-Hu model are equivalent to the $C_2T$ protected Euler class and the second Stiefel-Whitney class respectively, with the latter characterizing the full valence bands of Wu-Hu model indicating only a higher order topological insulator (HOTI) phase. We show that the Wu-Hu interface states can be gapped by a uniform topology preserving $C_6$ and $T$ symmetric perturbation, which demonstrates the trivial nature of the interface. Our results reveals that topology is not a necessary condition for the reported helical edge states in many photonics systems and opens new possibilities for interface engineering that may not be constrained to require topological designs.
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Submitted 22 March, 2023;
originally announced March 2023.
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Nonlinear Atomic Force Microscopy: Squeezing and Skewness of Micro-Mechanical Oscillators interacting with a Surface
Authors:
Karl-Peter Marzlin,
Bryan Canam,
Nisha Rani Agarwal
Abstract:
We propose a two-frequency driving scheme in dynamic atomic force microscopy that maximizes the interaction time between tip and sample. Using a stochastic description of the cantilever dynamics, we predict large classical squeezing and a small amount of skewness of the tip's phase-space probability distribution. Strong position squeezing will require close contact between tip and surface, while m…
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We propose a two-frequency driving scheme in dynamic atomic force microscopy that maximizes the interaction time between tip and sample. Using a stochastic description of the cantilever dynamics, we predict large classical squeezing and a small amount of skewness of the tip's phase-space probability distribution. Strong position squeezing will require close contact between tip and surface, while momentum squeezing would also be possible in the van der Waals region of the tip-surface force. Employing a generalized Caldeira-Leggett model, we predict that surface-dependent dissipative forces may be the dominant source of quantum effects and propose a procedure to isolate quantum effects from thermal fluctuations.
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Submitted 13 October, 2021;
originally announced October 2021.
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On-the-fly Closed-loop Autonomous Materials Discovery via Bayesian Active Learning
Authors:
A. Gilad Kusne,
Heshan Yu,
Changming Wu,
Huairuo Zhang,
Jason Hattrick-Simpers,
Brian DeCost,
Suchismita Sarker,
Corey Oses,
Cormac Toher,
Stefano Curtarolo,
Albert V. Davydov,
Ritesh Agarwal,
Leonid A. Bendersky,
Mo Li,
Apurva Mehta,
Ichiro Takeuchi
Abstract:
Active learning - the field of machine learning (ML) dedicated to optimal experiment design, has played a part in science as far back as the 18th century when Laplace used it to guide his discovery of celestial mechanics [1]. In this work we focus a closed-loop, active learning-driven autonomous system on another major challenge, the discovery of advanced materials against the exceedingly complex…
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Active learning - the field of machine learning (ML) dedicated to optimal experiment design, has played a part in science as far back as the 18th century when Laplace used it to guide his discovery of celestial mechanics [1]. In this work we focus a closed-loop, active learning-driven autonomous system on another major challenge, the discovery of advanced materials against the exceedingly complex synthesis-processes-structure-property landscape. We demonstrate autonomous research methodology (i.e. autonomous hypothesis definition and evaluation) that can place complex, advanced materials in reach, allowing scientists to fail smarter, learn faster, and spend less resources in their studies, while simultaneously improving trust in scientific results and machine learning tools. Additionally, this robot science enables science-over-the-network, reducing the economic impact of scientists being physically separated from their labs. We used the real-time closed-loop, autonomous system for materials exploration and optimization (CAMEO) at the synchrotron beamline to accelerate the fundamentally interconnected tasks of rapid phase mapping and property optimization, with each cycle taking seconds to minutes, resulting in the discovery of a novel epitaxial nanocomposite phase-change memory material.
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Submitted 10 November, 2020; v1 submitted 10 June, 2020;
originally announced June 2020.
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The shift photovoltaic current and magnetically-induced bulk photocurrent in piezoelectric sillenite crystals
Authors:
Aaron M. Burger,
Lingyuan Gao,
Radhe Agarwal,
Alexey Aprelev,
Jonathan E. Spanier,
Andrew M. Rappe,
Vladimir M. Fridkin
Abstract:
Recently, it has been shown how shift and ballistic currents in piezoelectric sillenite crystals Bi$_{12}$GeO$_{20}$ and Bi$_{12}$SiO$_{20}$ can be separated experimentally under the assumption that the shift component of the circular current is small. However, it has been claimed that the shift and ballistic currents cannot be quantified by this method, due to the magneto-photovoltaic effect caus…
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Recently, it has been shown how shift and ballistic currents in piezoelectric sillenite crystals Bi$_{12}$GeO$_{20}$ and Bi$_{12}$SiO$_{20}$ can be separated experimentally under the assumption that the shift component of the circular current is small. However, it has been claimed that the shift and ballistic currents cannot be quantified by this method, due to the magneto-photovoltaic effect caused either by the change of the crystal's spatial symmetry in the magnetic field or by the breaking of time-reversal symmetry. Presently, we report observations of photovoltaic currents in Bi$_{12}$SiO$_{20}$, excited by linearly- and circularly-polarized light under weak external magnetic field, as well as measurements of the corresponding photo-Hall signals. We demonstrate that the magneto-photovoltaic current constitutes a significant fraction of the measured current in the Hall direction for Bi$_{12}$SiO$_{20}$ under specific experimental conditions.
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Submitted 17 May, 2020;
originally announced May 2020.
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Circular photogalvanic effect in 2D van der Waals heterostructure
Authors:
Abdullah Rasmita,
Chongyun Jiang,
Hui Ma,
Zhurun Ji,
Ritesh Agarwal,
Wei-bo Gao
Abstract:
Utilizing spin or valley degree of freedom is one of the promising approaches to realize more energy-efficient information processing. In the 2D transition metal dichalcogenide, the spin/valley current can be generated by utilizing the circular photogalvanic effect (CPGE), i.e., the generation of photocurrent by a circularly polarized light. Here we show that an in-plane electric field at MoS2/WSe…
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Utilizing spin or valley degree of freedom is one of the promising approaches to realize more energy-efficient information processing. In the 2D transition metal dichalcogenide, the spin/valley current can be generated by utilizing the circular photogalvanic effect (CPGE), i.e., the generation of photocurrent by a circularly polarized light. Here we show that an in-plane electric field at MoS2/WSe2 heterostructure-electrode boundary results in an electrically tunable circular photogalvanic effect (CPGE) under optical excitation with normal incidence. The observed CPGE can be explained by the valence band shift due to the in-plane electric field and different effective relaxation times between hole and electron combined with the valley optical selection rule. Furthermore, we show that the CPGE can be controlled by changing the Fermi level using an out-of-plane electric field. Such phenomena persist even at room temperature. This finding may facilitate the utilization of 2D heterostructure as an opto-valleytronics and opto-spintronics device platform.
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Submitted 29 October, 2019;
originally announced October 2019.
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Self-Assembled Room Temperature Multiferroic BiFeO3-LiFe5O8 Nanocomposites
Authors:
Yogesh Sharma,
Radhe Agarwal,
Liam Collins,
Qiang Zheng,
Anton V. Ivelev,
Raphael P. Hermann,
Valentino R. Cooper,
Santosh KC,
Ilia N. Ivanov,
Ram S. Katiyar,
Sergei V. Kalinin,
Ho Nyung Lee,
Seungbum Hong,
Thomas Z. Ward
Abstract:
Multiferroic materials have driven significant research interest due to their promising technological potential. Developing new room-temperature multiferroics and understanding their fundamental properties are important to reveal unanticipated physical phenomena and potential applications. Here, a new room temperature multiferroic nanocomposite comprised of an ordered ferrimagnetic spinel LiFe5O8…
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Multiferroic materials have driven significant research interest due to their promising technological potential. Developing new room-temperature multiferroics and understanding their fundamental properties are important to reveal unanticipated physical phenomena and potential applications. Here, a new room temperature multiferroic nanocomposite comprised of an ordered ferrimagnetic spinel LiFe5O8 (LFO) and a ferroelectric perovskite BiFeO3 (BFO) is presented. We observed that lithium (Li)-doping in BFO favors the formation of LFO spinel as a secondary phase during the synthesis of LixBi1-xFeO3 nanoceramics. Multimodal functional and chemical imaging methods are used to map the relationship between doping-induced phase separation and local ferroic properties in both the BFO-LFO composite ceramics and self-assembled nanocomposite thin films. The energetics of phase separation in Li doped BFO and the formation of BFO-LFO composites is supported by first principles calculations. These findings shed light on Li-ion role in the formation of a functionally important room temperature multiferroic and open a new approach in the synthesis of light element doped nanocomposites.
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Submitted 13 August, 2019;
originally announced August 2019.
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A semi-empirical integrated microring cavity approach for 2D material optical index identification at 1.55 μm
Authors:
Rishi Maiti,
Rohit A. Hemnani,
Rubab Amin,
Zhizhen Ma,
Mohammad H. Tahersima,
Tom A. Empante,
Hamed Dalir,
Ritesh Agarwal,
Ludwig Bartels,
Volker J. Sorger
Abstract:
Atomically thin two-dimensional (2D) materials provide a wide range of basic building blocks with unique properties, making them ideal for heterogeneous integration with a mature chip platform for advances in optical communication technology. Control and understanding of the precise value of the optical index of these materials, however, is challenging, due to the small lateral flake dimension. He…
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Atomically thin two-dimensional (2D) materials provide a wide range of basic building blocks with unique properties, making them ideal for heterogeneous integration with a mature chip platform for advances in optical communication technology. Control and understanding of the precise value of the optical index of these materials, however, is challenging, due to the small lateral flake dimension. Here we demonstrate a semi-empirical method to determine the index of a 2D material (nMoTe2 of 4.36+0.011i) near telecommunication-relevant wavelength by integrating few layers of MoTe2 onto a micro-ring resonator. The placement, control, and optical-property understanding of 2D materials with integrated photonics paves a way for further studies of active 2D material-based optoelectronics and circuits.
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Submitted 22 December, 2019; v1 submitted 10 November, 2018;
originally announced November 2018.
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Optically-Controlled Orbitronics on a Triangular Lattice
Authors:
Vo Tien Phong,
Zachariah Addison,
Seongjin Ahn,
Hongki Min,
Ritesh Agarwal,
E. J. Mele
Abstract:
The propagation of electrons in an orbital multiplet dispersing on a lattice can support anomalous transport phenomena deriving from an orbitally-induced Berry curvature. In striking contrast to the related situation in graphene, we find that anomalous transport for an $L=1$ multiplet on the primitive 2D triangular lattice is activated by easily implemented on-site and optically-tunable potentials…
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The propagation of electrons in an orbital multiplet dispersing on a lattice can support anomalous transport phenomena deriving from an orbitally-induced Berry curvature. In striking contrast to the related situation in graphene, we find that anomalous transport for an $L=1$ multiplet on the primitive 2D triangular lattice is activated by easily implemented on-site and optically-tunable potentials. We demonstrate this for dynamics in a Bloch band where point degeneracies carrying opposite winding numbers are generically offset in energy, allowing both an anomalous charge Hall conductance with sign selected by off-resonance coupling to circularly-polarized light and a related anomalous orbital Hall conductance activated by layer buckling.
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Submitted 15 October, 2019; v1 submitted 25 September, 2018;
originally announced September 2018.
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Room-temperature polariton lasing in quantum heterostructure nanocavities
Authors:
Jang-Won Kang,
Bokyung Song,
Wenjing Liu,
Seong-Ju Park,
Ritesh Agarwal,
Chang-Hee Cho
Abstract:
Controlling light-matter interactions in solid-state systems has motivated intense research to produce bosonic quasi-particles known as exciton-polaritons, which requires strong coupling between excitons and cavity photons. Ultra-low threshold coherent light emitters can be achieved through lasing from exciton-polariton condensates, but this generally requires sophisticated device structures and c…
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Controlling light-matter interactions in solid-state systems has motivated intense research to produce bosonic quasi-particles known as exciton-polaritons, which requires strong coupling between excitons and cavity photons. Ultra-low threshold coherent light emitters can be achieved through lasing from exciton-polariton condensates, but this generally requires sophisticated device structures and cryogenic temperatures. Polaritonic nanolasers operating at room temperature lie on the crucial path of related research, not only for the exploration of polariton physics at the nanoscale but also for potential applications in quantum information systems, all-optical logic gates, and ultra-low threshold lasers. However, at present, progress toward room-temperature polariton nanolasers has been limited by the thermal instability of excitons and the inherently low quality factors of nanocavities. Here, we demonstrate room-temperature polaritonic nanolasers by designing wide-gap semiconductor heterostructure nanocavities to produce thermally stable excitons coupled with nanocavity photons. The resulting mixed states of exciton-polaritons with Rabi frequencies of approximately 370 meV enable persistent polariton lasing up to room temperature, facilitating the realization of miniaturized and integrated polariton systems.
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Submitted 2 September, 2018;
originally announced September 2018.
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Observation and active control of a collective polariton mode and polaritonic band gap in few-layer WS2 strongly coupled with plasmonic lattices
Authors:
Wenjing Liu,
Yuhui Wang,
Biyuan Zheng,
Minsoo Hwang,
Zhurun Ji,
Gerui Liu,
Ziwei Li,
Volker J. Sorger,
Anlian Pan,
Ritesh Agarwal
Abstract:
Two-dimensional semiconductors host excitons with very large oscillator strengths and binding energies due to significantly reduced carrier screening. Two-dimensional semiconductors integrated with optical cavities are emerging as a promising platform for studying strong light-matter interactions as a route to explore a variety of exotic many-body effects. Here, in few-layered WS2 coupled with pla…
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Two-dimensional semiconductors host excitons with very large oscillator strengths and binding energies due to significantly reduced carrier screening. Two-dimensional semiconductors integrated with optical cavities are emerging as a promising platform for studying strong light-matter interactions as a route to explore a variety of exotic many-body effects. Here, in few-layered WS2 coupled with plasmonic nanoparticle lattices, we observe the formation of a collective polaritonic mode near the exciton energy and the formation of a complete polariton band gap with energy scale comparable to the exciton-plasmon coupling strength. A coupled oscillator model reveals that the collective mode arises from the cooperative coupling of the excitons to the plasmonic lattice diffraction orders via exciton-exciton interactions. The emergence of the collective mode is accompanied by a superlinear increase of the polariton mode splitting as a function of the square root of the exciton oscillator strength. The presence of these many body effects, which are enhanced in systems which lack bulk polarization, not only allows the formation of a collective mode with periodically varying field profiles, but also further enhances the exciton-plasmon coupling. By integrating the hybrid WS2-plasmonic lattice device with a field-effect transistor, we demonstrate active tuning of the collective mode and the polariton band gap. These systems provide new opportunities for obtaining a deeper and systematic understanding of many body cooperative phenomena in periodic photonic systems and for designing more complex and actively controllable polaritonic devices including switchable polariton lasers, waveguides, and optical logical elements.
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Submitted 20 August, 2018;
originally announced August 2018.
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Spatially dispersive circular photogalvanic effect in a Weyl semimetal
Authors:
Zhurun Ji,
Gerui Liu,
Zachariah Addison,
Wenjing Liu,
Peng Yu,
Heng Gao,
Zheng Liu,
Andrew M. Rappe,
Charles L. Kane,
Eugene J. Mele,
Ritesh Agarwal
Abstract:
Weyl semimetals are gapless topological states of matter with broken inversion and/or time reversal symmetry, which can support unconventional responses to externally applied electrical, optical and magnetic fields. Here we report a new photogalvanic effect in type-II WSMs, MoTe2 and Mo0.9W0.1Te2, which are observed to support a circulating photocurrent when illuminated by circularly polarized lig…
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Weyl semimetals are gapless topological states of matter with broken inversion and/or time reversal symmetry, which can support unconventional responses to externally applied electrical, optical and magnetic fields. Here we report a new photogalvanic effect in type-II WSMs, MoTe2 and Mo0.9W0.1Te2, which are observed to support a circulating photocurrent when illuminated by circularly polarized light at normal incidence. This effect occurs exclusively in the inversion broken phase, where crucially we find that it is associated with a spatially varying beam profile via a new dispersive contribution to the circular photogalvanic effect (s-CPGE). The response functions derived for s-CPGE reveal the microscopic mechanism of this photocurrent, which are controlled by terms that are allowed in the absence of inversion symmetry, along with asymmetric carrier excitation and relaxation. By evaluating this response for a minimal model of a Weyl semimetal, we obtain the frequency dependent scaling behavior of this form of photocurrent. These results demonstrate opportunities for controlling photoresponse by patterning optical fields to store, manipulate and transmit information over a wide spectral range.
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Submitted 12 February, 2018;
originally announced February 2018.
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Towards a 2D Printer: A Deterministic Cross Contamination-free Transfer Method for Atomically Layered Materials
Authors:
Rohit A. Hemnani,
Caitlin Carfano,
Jason P. Tischler,
Mohammad H. Tahersima,
Rishi Maiti,
Ludwig Bartels,
Ritesh Agarwal,
Volker J. Sorger
Abstract:
Precision and chip contamination-free placement of two-dimensional (2D) materials is expected to accelerate both the study of fundamental properties and novel device functionality. Current transfer methods of 2D materials onto an arbitrary substrate deploy wet chemistry and viscoelastic stamping. However, these methods produce a) significant cross contamination of the substrate due to the lack of…
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Precision and chip contamination-free placement of two-dimensional (2D) materials is expected to accelerate both the study of fundamental properties and novel device functionality. Current transfer methods of 2D materials onto an arbitrary substrate deploy wet chemistry and viscoelastic stamping. However, these methods produce a) significant cross contamination of the substrate due to the lack of spatial selectivity b) may not be compatible with chemically sensitive device structures, and c) are challenged with respect to spatial alignment. Here, we demonstrate a novel method of transferring 2D materials resembling the functionality known from printing; utilizing a combination of a sharp micro-stamper and viscoelastic polymer, we show precise placement of individual 2D materials resulting in vanishing cross contamination to the substrate. Our 2D printer-method results show an aerial cross contamination improvement of two to three orders of magnitude relative to state-of-the-art dry and direct transfer methods. Moreover, we find that the 2D material quality is preserved in this transfer method. Testing this 2D material printer on taped-out integrated Silicon photonic chips, we find that the micro-stamper stamping transfer does not physically harm the underneath Silicon nanophotonic structures such as waveguides or micro-ring resonators receiving the 2D material. Such accurate and substrate-benign transfer method for 2D materials could be industrialized for rapid device prototyping due to its high time-reduction, accuracy, and contamination-free process.
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Submitted 18 January, 2018;
originally announced January 2018.
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Anion Exchange in II-VI Semiconducting Nanostructures via Atomic Templating
Authors:
Rahul Agarwal,
Nadia M. Krook,
Ming-Liang Ren,
Liang Z. Tan,
Wenjing Liu,
Andrew M. Rappe,
Ritesh Agarwal
Abstract:
Controlled chemical transformation of nanostructures is a promising technique to obtain precisely designed novel materials which are difficult to synthesize otherwise. We report high-temperature vapor phase anion exchange reactions to chemically transform II-VI semiconductor nanostructures (100-300 nm length scale) while retaining the single crystallinity, crystal structure, morphology and even de…
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Controlled chemical transformation of nanostructures is a promising technique to obtain precisely designed novel materials which are difficult to synthesize otherwise. We report high-temperature vapor phase anion exchange reactions to chemically transform II-VI semiconductor nanostructures (100-300 nm length scale) while retaining the single crystallinity, crystal structure, morphology and even defect distribution of the parent material via atomic templating. The concept of atomic templating is employed to obtain kinetically controlled, thermodynamically metastable structural phases such as zincblende CdSe and CdS from zincblende CdTe upon complete chemical replacement of Te with Se or S. The underlying transformation mechanisms are explained through first-principles density functional theory calculations. Atomic templating is a unique path to independently tune materials phase and composition at the nanoscale allowing synthesis of novel materials.
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Submitted 27 October, 2017;
originally announced October 2017.
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2D Materials in Electro-optic Modulation: energy efficiency, electrostatics, mode overlap, material transfer and integration
Authors:
Zhizhen Ma,
Rohit Hemnani,
Ludwig Bartels,
Ritesh Agarwal,
Volker J. Sorger
Abstract:
Here we discuss the physics of electro-optic modulators deploying 2D materials. We include a scaling laws analysis showing how energy-efficiency and speed change for three underlying cavity systems as a function of critical device length scaling. A key result is that the energy-per-bit of the modulator is proportional to the volume of the device, thus making the case for submicron-scale modulators…
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Here we discuss the physics of electro-optic modulators deploying 2D materials. We include a scaling laws analysis showing how energy-efficiency and speed change for three underlying cavity systems as a function of critical device length scaling. A key result is that the energy-per-bit of the modulator is proportional to the volume of the device, thus making the case for submicron-scale modulators possible deploying a plasmonic optical mode. We then show how Graphenes Pauli-blocking modulation mechanism is sensitive to the device operation temperature, whereby a reduction of the temperature enables a 10x reduction in modulator energy efficiency. Furthermore, we show how the high index tunability of Graphene is able to compensate for the small optical overlap factor of 2D-based material modulators, which is unlike classical Silicon-based dispersion devices. Lastly we demonstrate a novel method towards a 2D material printer suitable for cross-contamination free and on-demand printing. The latter paves the way to integrate 2D materials seamlessly into taped-out photonic chips.
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Submitted 20 August, 2017;
originally announced August 2017.
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Understanding the different exciton-plasmon coupling regimes in two-dimensional semiconductors coupled with plasmonic lattices: a combined experimental and unified equations of motion approach
Authors:
Wenjing Liu,
Yuhui Wang,
Carl H. Naylor,
Bumsu Lee,
Biyuan Zheng,
Gerui Liu,
A. T. Charlie Johnson,
Anlian Pan,
Ritesh Agarwal
Abstract:
We study exciton-plasmon coupling in two-dimensional semiconductors coupled with Ag plasmonic lattices via angle-resolved reflectance spectroscopy and by solving the equations of motion (EOMs) in a coupled oscillator model accounting for all the resonances of the system. Five resonances are considered in the EOM model: semiconductor A and B excitons, localized surface plasmon resonances (LSPRs) of…
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We study exciton-plasmon coupling in two-dimensional semiconductors coupled with Ag plasmonic lattices via angle-resolved reflectance spectroscopy and by solving the equations of motion (EOMs) in a coupled oscillator model accounting for all the resonances of the system. Five resonances are considered in the EOM model: semiconductor A and B excitons, localized surface plasmon resonances (LSPRs) of plasmonic nanostructures and the lattice diffraction modes of the plasmonic array. We investigated the exciton-plasmon coupling in different 2D semiconductors and plasmonic lattice geometries, including monolayer MoS2 and WS2 coupled with Ag nanodisk and bowtie arrays, and examined the dispersion and lineshape evolution in the coupled systems via the EOM model with different exciton-plasmon coupling parameters. The EOM approach provides a unified description of the exciton-plasmon interaction in the weak, intermediate and strong coupling cases with correctly explaining the dispersion and lineshapes of the complex system. This study provides a much deeper understanding of light-matter interactions in multilevel systems in general and will be useful to instruct the design of novel two-dimensional exciton-plasmonic devices for a variety of optoelectronic applications with precisely tailored responses.
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Submitted 24 June, 2017;
originally announced June 2017.
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Room-temperature relaxor ferroelectricity and photovoltaic effects in SnTiOx/Si thin film heterostructures
Authors:
Radhe Agarwal,
Yogesh Sharma,
Siliang Chang,
Krishna Pitike,
Changhee Sohn,
Serge M. Nakhmanson,
Christos G. Takoudis,
Ho Nyung Lee,
James F. Scott,
Ram S. Katiyar,
Seungbum Hong
Abstract:
We have studied ferroelectricity and photovoltaic effects in atomic layer deposited (ALD) 40-nm thick SnTiO$_{x}$ films deposited directly onto p-type (001)Si substrate. These films showed well-saturated, square and repeatable hysteresis loops with remnant polarization of 1.5 $μ$C/cm$^{2}$ at room temperature, as detected by out-of-plane polarization versus electric field (P-E) and field cycling m…
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We have studied ferroelectricity and photovoltaic effects in atomic layer deposited (ALD) 40-nm thick SnTiO$_{x}$ films deposited directly onto p-type (001)Si substrate. These films showed well-saturated, square and repeatable hysteresis loops with remnant polarization of 1.5 $μ$C/cm$^{2}$ at room temperature, as detected by out-of-plane polarization versus electric field (P-E) and field cycling measurements. A photo-induced enhancement in ferroelectricity was also observed as the spontaneous polarization increased under white-light illumination. The ferroelectricity exhibits relaxor characteristics with dielectric peak shifting from ca. T = 600 K at f = 1 MHz to ca. 500 K at 100 Hz. Moreover, our films showed ferroelectric photovoltaic behavior under the illumination of a wide spectrum of light, from visible to ultraviolet regions. A combination of experiment and theoretical calculation provided optical band gap of SnTiO$_{x}$ films which lies in the visible range of white light spectra. Our study leads a way to develop green ferroelectric SnTiO$_{x}$ thin films, which are compatible to semiconducting processes, and can be used for various ferroelectric and dielectric applications.
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Submitted 15 February, 2017;
originally announced February 2017.
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Active Material, Optical Mode and Cavity Impact on electro-optic Modulation Performance
Authors:
Rubab Amin,
Can Suer,
Zhizhen Ma,
Jacob B. Khurgin,
Ritesh Agarwal,
Volker J. Sorger
Abstract:
In this paper, three different materials Si, ITO and graphene; and three different types of mode structures bulk, slot and hybrid; based on their electrooptical and electro absorptive aspects in performance are analyzed. The study focuses on three major characteristics of electrooptic tuning, i.e. material, modal and cavity dependency. The materials are characterized with established models and th…
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In this paper, three different materials Si, ITO and graphene; and three different types of mode structures bulk, slot and hybrid; based on their electrooptical and electro absorptive aspects in performance are analyzed. The study focuses on three major characteristics of electrooptic tuning, i.e. material, modal and cavity dependency. The materials are characterized with established models and the allowed ranges for their key parameter spectra are analyzed with desired tuning in mind; categorizing into n and k dominant regions for plausible electrooptic and electro absorptive applications, respectively. A semi analytic approach, with the aid of FEM simulations for the eigenmode calculations, was used for this work. Electrooptic tuning i.e. resonance shift properties inside Fabry Perot cavities are investigated with modal and scaling concerns in mind. Tuning changes the effective complex refractive index of the mode dictated by the Kramers Kronig relations which subsequently suggest a tradeoff between the resonance shift and increasing losses. The electrical tuning properties of the different modes in the cavity are analyzed, and subsequently a figure of merit, delta-lambda/delta-alpha was chosen with respect to carrier concentration and cavity scaling to find prospective suitable regions for desired tuning effects.
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Submitted 7 December, 2016;
originally announced December 2016.
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Electrical tuning of exciton-plasmon polariton coupling in monolayer MoS2 integrated with plasmonic nanoantenna lattice
Authors:
Bumsu Lee,
Wenjing Liu,
Carl H. Naylor,
Joohee Park,
Stephanie Malek,
Jacob Berger,
A. T. Charlie Johnson,
Ritesh Agarwal
Abstract:
Active control of light-matter interactions in semiconductors is critical for realizing next generation optoelectronic devices, with tunable control of the systems optical properties via external fields. The ability to manipulate optical interactions in active materials coupled to cavities via geometrical parameters, which are fixed along with dynamic control with applied fields opens up possibili…
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Active control of light-matter interactions in semiconductors is critical for realizing next generation optoelectronic devices, with tunable control of the systems optical properties via external fields. The ability to manipulate optical interactions in active materials coupled to cavities via geometrical parameters, which are fixed along with dynamic control with applied fields opens up possibilities of controlling exciton lifetimes, oscillator strengths and their relaxation properties. Here, we demonstrate electrical control of exciton-plasmon polariton coupling strength of a two-dimensional semiconductor integrated with plasmonic nanoresonators assembled in a field-effect transistor device between strong and weak coupling limits by electrostatic doping. As a result, the exciton-plasmon polarion dispersion can be altered dynamically with applied electric field by modulating the excitonic properties of monolayer MoS2 arising from many-body effects with carrier concentration. In addition, strong coupling between charged excitons plasmons was also observed upon increased carrier injection. The ability to dynamically control the optical properties of an ultra-thin semiconductor with plasmonic nanoresonators and electric fields demonstrates the versatility of the coupled system and offers a new platform for the design of optoelectronic devices with precisely tailored responses.
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Submitted 24 August, 2016;
originally announced August 2016.
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Light element diffusion in Mg using first principles calculations: Anisotropy and elastodiffusion
Authors:
Ravi Agarwal,
Dallas R. Trinkle
Abstract:
The light elemental solutes B, C, N, and O can penetrate the surface of Mg alloys and diffuse during heat treatment or high temperature application, forming undesirable compounds. We investigate the diffusion of these solutes by determining their stable interstitial sites and the inter-penetrating network formed by these sites. We use density functional theory (DFT) to calculate the site energies,…
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The light elemental solutes B, C, N, and O can penetrate the surface of Mg alloys and diffuse during heat treatment or high temperature application, forming undesirable compounds. We investigate the diffusion of these solutes by determining their stable interstitial sites and the inter-penetrating network formed by these sites. We use density functional theory (DFT) to calculate the site energies, migration barriers, and attempt frequencies for these networks to inform our analytical model for bulk diffusion. Due to the nature of the networks, O diffuses isotropically, while B, C, and N diffuse anisotropically. We compute the elastodiffusion tensor which quantifies changes in diffusivity due to small strains that perturb the diffusion network geometry and the migration barriers. The DFT-computed elastic dipole tensor which quantifies the change in site energies and migration barriers due to small strains is used as an input to determine the elastodiffusion tensor. We employ the elastodiffusion tensor to determine the effect of thermal strains on interstitial diffusion and find that B, C, and N diffusivity increases on crystal expansion, while O diffusivity decreases. From the elastodiffusion and compliance tensors we calculate the activation volume of diffusion and find that it is positive and anisotropic for B, C and N diffusion, whereas it is negative and isotropic for O diffusion.
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Submitted 29 July, 2016; v1 submitted 18 May, 2016;
originally announced May 2016.
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Strong exciton-plasmon coupling in MoS2 coupled with plasmonic lattice
Authors:
Wenjing Liu,
Bumsu Lee,
Carl H. Naylor,
Ho-Seok Ee,
Joohee Park,
A. T. Charlie Johnson,
Ritesh Agarwal
Abstract:
We demonstrate strong exciton-plasmon coupling in silver nanodisk arrays integrated with monolayer MoS2 via angle-resolved reflectance microscopy spectra of the coupled system. Strong exciton-plasmon coupling is observed with the exciton-plasmon coupling strength up to 58 meV at 77 K, which also survives at room temperature. The strong coupling involves three types of resonances: MoS2 excitons, lo…
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We demonstrate strong exciton-plasmon coupling in silver nanodisk arrays integrated with monolayer MoS2 via angle-resolved reflectance microscopy spectra of the coupled system. Strong exciton-plasmon coupling is observed with the exciton-plasmon coupling strength up to 58 meV at 77 K, which also survives at room temperature. The strong coupling involves three types of resonances: MoS2 excitons, localized surface plasmon resonances (LSPRs) of individual silver nanodisks and plasmonic lattice resonances of the nanodisk array. We show that the exciton-plasmon coupling strength, polariton composition and dispersion can be effectively engineered by tuning the geometry of the plasmonic lattice, which makes the system promising for realizing novel two-dimensional plasmonic polaritonic devices.
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Submitted 11 November, 2015;
originally announced November 2015.
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Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt-(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3-LaNiO3 heterostructures
Authors:
Radhe Agarwal,
Yogesh Sharma,
Ram S. Katiyar
Abstract:
We studied switchable photovoltaic and photo-diode characteristics of Pt (Bi0.9Sm0.1)(Fe0.97Hf0.03)O3 LaNiO3 (Pt BSFHO LNO) heterostructures integrated on Si (100). The directions of photocurrent (JSC) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt BSFHO LNO shows JSC 32 microAmp cm2 and VOC…
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We studied switchable photovoltaic and photo-diode characteristics of Pt (Bi0.9Sm0.1)(Fe0.97Hf0.03)O3 LaNiO3 (Pt BSFHO LNO) heterostructures integrated on Si (100). The directions of photocurrent (JSC) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt BSFHO LNO shows JSC 32 microAmp cm2 and VOC 0.04 V, which increase to maximum value of JSC 303 ( 206) microAmp cm2 and VOC 0.32 (0.26) V after upward (downward) poling at 8 V. We believe that Schottky barrier modulation by polarization flipping at Pt BSFHO interface could be a main driving force behind switchable photovoltaic and rectifying diode characteristics of Pt BSFHO LNO heterostructures.
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Submitted 12 October, 2015;
originally announced October 2015.
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Fano resonance and spectrally modified photoluminescence enhancement in monolayer MoS2 integrated with plasmonic nanoantenna array
Authors:
Bumsu Lee,
Joohee Park,
Gang Hee Han,
Ho-Seok Ee,
Carl H. Naylor,
Wenjing Liu,
A. T. Charlie Johnson,
Ritesh Agarwal
Abstract:
The manipulation of light-matter interactions in two-dimensional atomically thin crystals is critical for obtaining new optoelectronic functionalities in these strongly confined materials. Here, by integrating chemically grown monolayers of MoS2 with a silver-bowtie nanoantenna array supporting narrow surface-lattice plasmonic resonances, a unique two-dimensional optical system has been achieved.…
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The manipulation of light-matter interactions in two-dimensional atomically thin crystals is critical for obtaining new optoelectronic functionalities in these strongly confined materials. Here, by integrating chemically grown monolayers of MoS2 with a silver-bowtie nanoantenna array supporting narrow surface-lattice plasmonic resonances, a unique two-dimensional optical system has been achieved. The enhanced exciton-plasmon coupling enables profound changes in the emission and excitation processes leading to spectrally tunable, large photoluminescence enhancement as well as surface-enhanced Raman scattering at room temperature. Furthermore, at low temperatures, due to the decreased damping of MoS2 excitons interacting with the plasmonic resonances of the bowtie array, stronger exciton-plasmon coupling is achieved resulting in a Fano lineshape in the reflection spectrum. The Fano lineshape, which is due to the interference between the pathways involving the excitation of the exciton and plasmon, can be tuned by altering the coupling strengths between the two systems via changing the design of the bowties lattice. The ability to manipulate the optical properties of two-dimensional systems with tunable plasmonic resonators offers a new platform for the design of novel optical devices with precisely tailored responses.
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Submitted 11 March, 2015;
originally announced March 2015.
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High Temperature Enthalpy Increment and Thermodynamic Functions of ZrCo: An Experimental and Theoretical Study
Authors:
D. Chattaraj,
Ram Avtar Jat,
S. C. Parida,
Renu Agarwal,
Smruti Dash
Abstract:
The ZrCo intermetallic was proposed as tritium storage material in the International Thermonuclear Experimental Reactors (ITER) project. The thermodynamic properties of ZrCo intermetallic were investigated both experimentally and theoretically to determine its applicability for the storage of hydrogen isotopes. The enthalpy increments of ZrCo were measured using a high temperature inverse drop cal…
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The ZrCo intermetallic was proposed as tritium storage material in the International Thermonuclear Experimental Reactors (ITER) project. The thermodynamic properties of ZrCo intermetallic were investigated both experimentally and theoretically to determine its applicability for the storage of hydrogen isotopes. The enthalpy increments of ZrCo were measured using a high temperature inverse drop calorimeter in the temperature range 645-1500 K. A set of thermodynamic functions such as entropy, Gibbs energy function, heat capacity, Gibbs energy and enthalpy values for ZrCo were calculated using the data obtained in this study. The polynomial expression of enthalpy increments and heat capacity obtained for ZrCo(s) in the temperature range 642-1497 K are given as: H(T) - H(298.15 K) (J/mol) = 25.682x(T/K) + 29.804x10e-4 (T/K)**2+ 2.1864x10e+5 (K/T) - 8655.5 Cp (J/K/mol) =25.682 + 5.916x10e-3 (T/K) - 2.1864x10e+5 (K/T)**2 The enthalpy of formation of ZrCo at 0 K was calculated as -55 kJ mol-1 using the ab-initio method. The entropy (S) and specific heat capacities (Cv and Cp) of ZrCo were also computed using Debye-Grüneisen quasi-harmonic approximation. A good agreement between the experimental and theoretically calculated values of specific heat (CP) and entropy was obtained.
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Submitted 29 January, 2015;
originally announced January 2015.
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Studies of hot photoluminescence in plasmonically-coupled silicon via variable energy excitation and temperature dependent spectroscopy
Authors:
Carlos O. Aspetti,
Chang-Hee Cho,
Rahul Agarwal,
Ritesh Agarwal
Abstract:
By coupling silicon nanowires (~150 nm diameter, 20 micron length) with an Ω-shaped plasmonic nanocavity we are able to generate broadband visible luminescence, which is induced by high-order hybrid nanocavity-surface plasmon modes. The nature of this super-bandgap emission is explored via photoluminescence spectroscopy studies performed with variable laser excitation energies (1.959 eV to 2.708 e…
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By coupling silicon nanowires (~150 nm diameter, 20 micron length) with an Ω-shaped plasmonic nanocavity we are able to generate broadband visible luminescence, which is induced by high-order hybrid nanocavity-surface plasmon modes. The nature of this super-bandgap emission is explored via photoluminescence spectroscopy studies performed with variable laser excitation energies (1.959 eV to 2.708 eV) and finite difference time domain simulations. Furthermore, temperature-dependent photoluminescence spectroscopy shows that the observed emission corresponds to radiative recombination of un-thermalized (hot) carriers as opposed to a Resonant Raman process.
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Submitted 27 November, 2013;
originally announced November 2013.
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Extremely Low Drift in Amorphous Phase Change Nanowire Materials
Authors:
Mukut Mitra,
Yeonwoong Jung,
Daniel S. Gianola,
Ritesh Agarwal
Abstract:
Time-dependent drift of resistance and threshold voltage in phase change memory (PCM) devices is of concern as it leads to data loss. Electrical drift in amorphous chalcogenides has been argued to be either due to electronic or stress relaxation mechanisms. Here we show that drift in amorphized Ge2Sb2Te5 nanowires with exposed surfaces is extremely low in comparison to thin-film devices. However,…
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Time-dependent drift of resistance and threshold voltage in phase change memory (PCM) devices is of concern as it leads to data loss. Electrical drift in amorphous chalcogenides has been argued to be either due to electronic or stress relaxation mechanisms. Here we show that drift in amorphized Ge2Sb2Te5 nanowires with exposed surfaces is extremely low in comparison to thin-film devices. However, drift in stressed nanowires embedded under dielectric films is comparable to thin-films. Our results shows that drift in PCM is due to stress relaxation and will help in understanding and controlling drift in PCM devices.
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Submitted 10 April, 2010;
originally announced April 2010.
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Manipulation and assembly of nanowires with holographic optical traps
Authors:
Ritesh Agarwal,
Kosta Ladavac,
Yael Roichman,
Guiha Yu,
Charles M. Lieber,
David G. Grier
Abstract:
We demonstrate that semiconductor nanowires measuring just a few nanometers in diameter can be translated, rotated, cut, fused and organized into nontrivial structures using holographic optical traps. The holographic approach to nano-assembly allows for simultaneous independent manipulation of multiple nanowires, including relative translation and relative rotation.
We demonstrate that semiconductor nanowires measuring just a few nanometers in diameter can be translated, rotated, cut, fused and organized into nontrivial structures using holographic optical traps. The holographic approach to nano-assembly allows for simultaneous independent manipulation of multiple nanowires, including relative translation and relative rotation.
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Submitted 12 September, 2005;
originally announced September 2005.
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Lasing in Single Cadmium Sulfide Nanowire Optical Cavities
Authors:
Ritesh Agarwal,
Carl J. Barrelet,
Charles M. Lieber
Abstract:
The mechanism of lasing in single cadmium sulfide (CdS) nanowire cavities was elucidated by temperature-dependent and time-resolved photoluminescence (PL) measurements. Temperature-dependent PL studies reveal rich spectral features and show that an exciton-exciton interaction is critical to lasing up to 75 K, while an exciton-phonon process dominates at higher temperatures. These measurements to…
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The mechanism of lasing in single cadmium sulfide (CdS) nanowire cavities was elucidated by temperature-dependent and time-resolved photoluminescence (PL) measurements. Temperature-dependent PL studies reveal rich spectral features and show that an exciton-exciton interaction is critical to lasing up to 75 K, while an exciton-phonon process dominates at higher temperatures. These measurements together with temperature and intensity dependent life-time and threshold studies suggest that lasing is due to formation of excitons, and moreover, have implications for the design of efficient, low-threshold nanowire lasers.
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Submitted 6 December, 2004;
originally announced December 2004.
