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Condensed Matter > Materials Science

arXiv:1702.04791 (cond-mat)
[Submitted on 15 Feb 2017]

Title:Room-temperature relaxor ferroelectricity and photovoltaic effects in SnTiOx/Si thin film heterostructures

Authors:Radhe Agarwal, Yogesh Sharma, Siliang Chang, Krishna Pitike, Changhee Sohn, Serge M. Nakhmanson, Christos G. Takoudis, Ho Nyung Lee, James F. Scott, Ram S. Katiyar, Seungbum Hong
View a PDF of the paper titled Room-temperature relaxor ferroelectricity and photovoltaic effects in SnTiOx/Si thin film heterostructures, by Radhe Agarwal and 10 other authors
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Abstract:We have studied ferroelectricity and photovoltaic effects in atomic layer deposited (ALD) 40-nm thick SnTiO$_{x}$ films deposited directly onto p-type (001)Si substrate. These films showed well-saturated, square and repeatable hysteresis loops with remnant polarization of 1.5 $\mu$C/cm$^{2}$ at room temperature, as detected by out-of-plane polarization versus electric field (P-E) and field cycling measurements. A photo-induced enhancement in ferroelectricity was also observed as the spontaneous polarization increased under white-light illumination. The ferroelectricity exhibits relaxor characteristics with dielectric peak shifting from ca. T = 600 K at f = 1 MHz to ca. 500 K at 100 Hz. Moreover, our films showed ferroelectric photovoltaic behavior under the illumination of a wide spectrum of light, from visible to ultraviolet regions. A combination of experiment and theoretical calculation provided optical band gap of SnTiO$_{x}$ films which lies in the visible range of white light spectra. Our study leads a way to develop green ferroelectric SnTiO$_{x}$ thin films, which are compatible to semiconducting processes, and can be used for various ferroelectric and dielectric applications.
Comments: 24 pages, 10 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1702.04791 [cond-mat.mtrl-sci]
  (or arXiv:1702.04791v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1702.04791
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. B 97, 054109 (2018)
Related DOI: https://doi.org/10.1103/PhysRevB.97.054109
DOI(s) linking to related resources

Submission history

From: Seungbum Hong [view email]
[v1] Wed, 15 Feb 2017 21:46:19 UTC (3,316 KB)
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