Showing 1–16 of 16 results for author: Yang, C L

Simulating and probing many-body quantum states in waveguide-QED systems with giant atoms

Authors: C. L. Yang, W. Z. Jia

Abstract: Waveguide quantum electrodynamics (wQED) with giant atoms provides a distinctive opportunity to study one-dimensional (1D) coupled spin systems through its unique decoherence-free interactions. This study presents a theoretical framework for simulating the diagonal Aubry-André-Harper (AAH) model in the context of giant-atom wQED. The proposed scheme employs photonic modes in the waveguide to not o… ▽ More Waveguide quantum electrodynamics (wQED) with giant atoms provides a distinctive opportunity to study one-dimensional (1D) coupled spin systems through its unique decoherence-free interactions. This study presents a theoretical framework for simulating the diagonal Aubry-André-Harper (AAH) model in the context of giant-atom wQED. The proposed scheme employs photonic modes in the waveguide to not only mediate interactions between atoms but also to detect the energy spectrum of the atom array. To illustrate the effectiveness of this approach, we present a simulation of the Hofstadter butterfly spectrum with high precision. Furthermore, for an incommensurate AAH atomic chain, we demonstrate that the photon transmission spectrum can accurately distinguish between the many-body localized phase and the extended phase. The method presented here is also applicable to the simulation of other types of 1D atomic chains based on giant-atom wQED. △ Less

Submitted 15 February, 2025; v1 submitted 27 October, 2024; originally announced October 2024.

Comments: 12 pages, 7 figures

Journal ref: Phys. Rev. A 111, 023712 (2025)

New $α$-Emitting Isotope $^{214}$U and Abnormal Enhancement of $α$-Particle Clustering in Lightest Uranium Isotopes

Authors: Z. Y. Zhang, H. B. Yang, M. H. Huang, Z. G. Gan, C. X. Yuan, C. Qi, A. N. Andreyev, M. L. Liu, L. Ma, M. M. Zhang, Y. L. Tian, Y. S. Wang, J. G. Wang, C. L. Yang, G. S. Li, Y. H. Qiang, W. Q. Yang, R. F. Chen, H. B. Zhang, Z. W. Lu, X. X. Xu, L. M. Duan, H. R. Yang, W. X. Huang, Z. Liu , et al. (17 additional authors not shown)

Abstract: A new $α$-emitting isotope $^{214}$U, produced by fusion-evaporation reaction $^{182}$W($^{36}$Ar, 4n)$^{214}$U, was identified by employing the gas-filled recoil separator SHANS and recoil-$α$ correlation technique. More precise $α$-decay properties of even-even nuclei $^{216,218}$U were also measured in reactions of $^{40}$Ar, $^{40}$Ca with $^{180, 182, 184}$W targets. By combining the experime… ▽ More A new $α$-emitting isotope $^{214}$U, produced by fusion-evaporation reaction $^{182}$W($^{36}$Ar, 4n)$^{214}$U, was identified by employing the gas-filled recoil separator SHANS and recoil-$α$ correlation technique. More precise $α$-decay properties of even-even nuclei $^{216,218}$U were also measured in reactions of $^{40}$Ar, $^{40}$Ca with $^{180, 182, 184}$W targets. By combining the experimental data, improved $α$-decay reduced widths $δ^2$ for the even-even Po--Pu nuclei in the vicinity of magic neutron number $N=126$ were deduced. Their systematic trends are discussed in terms of $N_{p}N_{n}$ scheme in order to study the influence of proton-neutron interaction on $α$ decay in this region of nuclei. It is strikingly found that the reduced widths of $^{214,216}$U are significantly enhanced by a factor of two as compared with the $N_{p}N_{n}$ systematics for the $84 \leq Z \leq 90$ and $N<126$ even-even nuclei. The abnormal enhancement is interpreted by the strong monopole interaction between the valence protons and neutrons occupying the $π1f_{7/2}$ and $ν1f_{5/2}$ spin-orbit partner orbits, which is supported by a large-scale shell model calculation. △ Less

Submitted 15 January, 2021; originally announced January 2021.

Journal ref: Phys. Rev. Lett. 126, 152502 (2021)

Kondo effect in a novel 5d quasi-skutterudite Yb3Os4Ge13

Authors: C. L. Yang, X. Wang, X. Zhang, D. S. Wu, M. Liu, P. Zheng, J. Y. Yao, Z. Z. Li, Y. F. Yang, Y. G. Shi, J. L. Luo, N. L. Wang

Abstract: We report the crystal growth of a new compound, Yb3Os4Ge13, by using a Bi-flux method. X-ray diffraction measurement shows that it crystallizes in the quasi-skutterudite-type caged structure with a cubic space group of Pm-3n (No. 223). Magnetic measurements reveal almost fully localized Yb f-moments above 120 K. The resistivity exhibits a crossover from metallic to insulating behavior with a logar… ▽ More We report the crystal growth of a new compound, Yb3Os4Ge13, by using a Bi-flux method. X-ray diffraction measurement shows that it crystallizes in the quasi-skutterudite-type caged structure with a cubic space group of Pm-3n (No. 223). Magnetic measurements reveal almost fully localized Yb f-moments above 120 K. The resistivity exhibits a crossover from metallic to insulating behavior with a logarithmic increase below ~ 40 K. The specific heat coefficient shows a rapid upturn below ~5 K and exceeds 2 J mol-1 K-2 at 2 K. Our experimental analysis and electronic band structure calculations demonstrate that Yb3Os4Ge13 exhibits the Kondo effect due to strong hybridization of the localized Yb f-moments with the p-electrons of the surrounding Ge-cages. △ Less

Submitted 6 November, 2014; originally announced November 2014.

Comments: 18 pages, 5 figures, 2 tables

Journal ref: Phys. Rev. B 91, 075120 (2015)

Shubnikov-de Haas oscillations of a single layer graphene under dc current bias

Authors: Zhenbing Tan, ChangLing Tan, Li Ma, G. T. Liu, L. Lu, C. L. Yang

Abstract: Shubnikov-de Haas (SdH) oscillations under a dc current bias are experimentally studied on a Hall bar sample of single layer graphene. In dc resistance, the bias current shows the common damping effect on the SdH oscillations and the effect can be well accounted for by an elevated electron temperature that is found to be linearly dependent on the current bias. In differential resistance, a novel p… ▽ More Shubnikov-de Haas (SdH) oscillations under a dc current bias are experimentally studied on a Hall bar sample of single layer graphene. In dc resistance, the bias current shows the common damping effect on the SdH oscillations and the effect can be well accounted for by an elevated electron temperature that is found to be linearly dependent on the current bias. In differential resistance, a novel phase inversion of the SdH oscillations has been observed with increasing dc bias, namely we observe the oscillation maxima develop into minima and vice versa. Moreover, it is found that the onset biasing current, at which a SdH extremum is about to invert, is linearly dependent on the magnetic field of the SdH extrema. These observations are quantitatively explained with the help of a general SdH formula. △ Less

Submitted 14 August, 2011; v1 submitted 19 April, 2011; originally announced April 2011.

Comments: 5 pages, 4 figures, A few references added

Journal ref: Physical Review B 84, 115429 (2011)

Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide

Authors: J. Chen, H. J. Qin, F. Yang, J. Liu, T. Guan, F. M. Qu, G. H. Zhang, J. R. Shi, X. C. Xie, C. L. Yang, K. H. Wu, Y. Q. Li, L. Lu

Abstract: We report that Bi$_2$Se$_3$ thin films can be epitaxially grown on SrTiO$_{3}$ substrates, which allow for very large tunablity in carrier density with a back-gate. The observed low field magnetoconductivity due to weak anti-localization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual chang… ▽ More We report that Bi$_2$Se$_3$ thin films can be epitaxially grown on SrTiO$_{3}$ substrates, which allow for very large tunablity in carrier density with a back-gate. The observed low field magnetoconductivity due to weak anti-localization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest much suppressed bulk conductivity at large negative gate-voltages and a possible role of surface states in the WAL phenomena. This work may pave a way for realizing three-dimensional topological insulators at ambient conditions. △ Less

Submitted 11 March, 2010; v1 submitted 7 March, 2010; originally announced March 2010.

Comments: 5 pages, 4 figures.

Journal ref: Phys. Rev. Lett. 105, 176602 (2010)

Magneto-electric photocurrent generated by direct inter-band transitions in InGaAs/InAlAs two-dimensional electron gas

Authors: Junfeng Dai, Hai-Zhou Lu, C. L. Yang, Shun-Qing Shen, Fu-Chun Zhang, Xiaodong Cui

Abstract: We report observation of magneto-electric photocurrent generated via direct inter-band transitions in an InGaAs/InAlAs two-dimensional electron gas excited by a linearly polarized incident light.The electric current is proportional to the in-plane magnetic field which unbalances the velocities of the photoexcited carriers with opposite spins and consequently generates electric current from a spin… ▽ More We report observation of magneto-electric photocurrent generated via direct inter-band transitions in an InGaAs/InAlAs two-dimensional electron gas excited by a linearly polarized incident light.The electric current is proportional to the in-plane magnetic field which unbalances the velocities of the photoexcited carriers with opposite spins and consequently generates electric current from a spin photocurrent. The observed light polarization dependence of the electric current is explained microscopically by taking into account of the anisotropy of the photoexcited carrier density in wave vector space. The spin photocurrent can be extracted from the measured current and the conversion coefficient of spin photocurrent to electric current is estimated to be $10^{-3}$$\sim$$10^{-2}$ per Tesla. △ Less

Submitted 16 June, 2010; v1 submitted 1 March, 2010; originally announced March 2010.

Journal ref: Phys. Rev. Lett. 104, 246601 (2010)

Determination of the Sign of g factors for Conduction Electrons Using Time-resolved Kerr Rotation

Authors: C. L. Yang, Junfeng Dai, W. K. Ge, Xiaodong Cui

Abstract: The knowledge of electron g factor is essential for spin manipulation in the field of spintronics and quantum computing. While there exist technical difficulties in determining the sign of g factor in semiconductors by the established magneto-optical spectroscopic methods. We develop a time resolved Kerr rotation technique to precisely measure the sign and the amplitude of electron g factor in s… ▽ More The knowledge of electron g factor is essential for spin manipulation in the field of spintronics and quantum computing. While there exist technical difficulties in determining the sign of g factor in semiconductors by the established magneto-optical spectroscopic methods. We develop a time resolved Kerr rotation technique to precisely measure the sign and the amplitude of electron g factor in semiconductors. △ Less

Submitted 23 December, 2009; originally announced December 2009.

Journal ref: Appl. Phys. Lett. 96, 152109 (2010)

Observations of two-fold shell filling and Kondo effect in a graphene nano-ribbon quantum dot device

Authors: C. L. Tan, Z. B. Tan, K. Wang, L. Ma, F. Yang, F. M. Qu, J. Chen, C. L. Yang, L. Lu

Abstract: A graphene nanoribbon (GNR) with orientation along its principle axis was obtained through a mechanical tearing process, and a quantum dot device was fabricated from the GNR. We have studied the transport property of the GNR quantum dot device down to dilution refrigerator temperatures. Two-fold charging periodicity was observed in the Coulomb-blockade measurement, signaling a shell-filling proc… ▽ More A graphene nanoribbon (GNR) with orientation along its principle axis was obtained through a mechanical tearing process, and a quantum dot device was fabricated from the GNR. We have studied the transport property of the GNR quantum dot device down to dilution refrigerator temperatures. Two-fold charging periodicity was observed in the Coulomb-blockade measurement, signaling a shell-filling process with broken valley degeneracy. In one of the smaller Coulomb diamonds, Kondo-like resonance were observed, with two conductance peaks displaced symmetrically from the zero bias voltage. The splitting of Kondo resonance at zero magnetic field suggests spin-polarization of the quantum dot, possibly due to the edge states of a zigzag GNR. △ Less

Submitted 29 October, 2009; originally announced October 2009.

Comments: 5 pages, 4 figures

Photovoltaic Oscillations Due to Edge-Magnetoplasmon Modes in a Very-High Mobility 2D Electron Gas

Authors: K. Stone, C. L. Yang, Z. Q. Yuan, R. R. Du, L. N. Pfeiffer, K. W. West

Abstract: Using very-high mobility GaAs/AlGaAs 2D electron Hall bar samples, we have experimentally studied the photoresistance/photovoltaic oscillations induced by microwave irradiation in the regime where both 1/B and B-periodic oscillations can be observed. In the frequency range between 27 and 130 GHz we found that these two types of oscillations are decoupled from each other, consistent with the resp… ▽ More Using very-high mobility GaAs/AlGaAs 2D electron Hall bar samples, we have experimentally studied the photoresistance/photovoltaic oscillations induced by microwave irradiation in the regime where both 1/B and B-periodic oscillations can be observed. In the frequency range between 27 and 130 GHz we found that these two types of oscillations are decoupled from each other, consistent with the respective models that 1/B oscillations occur in bulk while the B-oscillations occur along the edges of the Hall bars. In contrast to the original report of this phenomenon (Ref. 1) the periodicity of the B-oscillations in our samples are found to be independent of L, the length of the Hall bar section between voltage measuring leads. △ Less

Submitted 12 November, 2007; v1 submitted 20 September, 2007; originally announced September 2007.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 76, 153306 (2007)

Microwave photoresistance of a high-mobility two-dimensional electron gas in a triangular antidot lattice

Authors: Z. Q. Yuan, C. L. Yang, R. R. Du, L. N. Pfeiffer, K. W. West

Abstract: The microwave (MW) photoresistance has been measured on a high-mobility two-dimensional electron gas patterned with a shallow triangular antidot lattice, where both the MW-induced resistance oscillations (MIRO) and magnetoplasmon (MP) resonance are observed superposing on sharp commensurate geometrical resonance (GR). Analysis shows that the MIRO, MP, and GR are decoupled from each other in thes… ▽ More The microwave (MW) photoresistance has been measured on a high-mobility two-dimensional electron gas patterned with a shallow triangular antidot lattice, where both the MW-induced resistance oscillations (MIRO) and magnetoplasmon (MP) resonance are observed superposing on sharp commensurate geometrical resonance (GR). Analysis shows that the MIRO, MP, and GR are decoupled from each other in these experiments. △ Less

Submitted 27 July, 2006; originally announced July 2006.

Comments: 5 pages, 4 figures, paper accepted by PRB

Spin photocurrent, its spectra dependence, and current-induced spin polarization in an InGaAs/InAlAs two-dimensional electron gas

Authors: C. L. Yang, H. T. He, Lu Ding, L. J. Cui, Y. P. Zeng, J. N. Wang, W. K. Ge

Abstract: Converse effect of spin photocurrent and current induced spin polarization are experimentally demonstrated in the same two-dimensional electron gas system with Rashba spin splitting. Their consistency with the strength of the Rashba coupling as measured from beating of the Shubnikov-de Haas oscillations reveals a unified picture for the spin photocurrent, current-induced spin polarization and sp… ▽ More Converse effect of spin photocurrent and current induced spin polarization are experimentally demonstrated in the same two-dimensional electron gas system with Rashba spin splitting. Their consistency with the strength of the Rashba coupling as measured from beating of the Shubnikov-de Haas oscillations reveals a unified picture for the spin photocurrent, current-induced spin polarization and spin orbit coupling. In addition, the observed spectral inversion of the spin photocurrent indicates the system with dominating structure inversion asymmetry. △ Less

Submitted 12 April, 2006; originally announced April 2006.

Comments: 13 pages, 4 figures

Influence of a Parallel Magnetic Field on Microwave Photoconductivity in a High-Mobility 2D Electron System

Authors: C. L. Yang, R. R. Du, L. N. Pfeiffer, K. W. West

Abstract: We have studied experimentally the influence of a parallel magnetic field ($B_{//}$) on microwave-induced resistance oscillations (MIRO) and zero-resistance states (ZRS) previously discovered in a high-mobility 2D electron system. We have observed a strong suppression of MIRO/ZRS by a modest $B_{//}\sim 0.5$ T. In Hall bar samples, magnetoplasmon resonance (MPR) has also been observed concurrent… ▽ More We have studied experimentally the influence of a parallel magnetic field ($B_{//}$) on microwave-induced resistance oscillations (MIRO) and zero-resistance states (ZRS) previously discovered in a high-mobility 2D electron system. We have observed a strong suppression of MIRO/ZRS by a modest $B_{//}\sim 0.5$ T. In Hall bar samples, magnetoplasmon resonance (MPR) has also been observed concurrently with the MIRO/ZRS. In contrast to the suppression of MIRO/ZRS, the MPR peak is found to be enhanced by $B_{//}$. These findings have not been addressed by current models proposed to explain the microwave-induced effects. △ Less

Submitted 27 April, 2005; originally announced April 2005.

Comments: RevTex4, 4 pages, 3 figures

Oscillatory and Vanishing Resistance States in Microwave Irradiated 2D Electron Systems

Authors: R. R. Du, M. A. Zudov, C. L. Yang, Z. Q. Yuan, L. N. Pfeiffer, K. W. West

Abstract: Giant-amplitude oscillations in dc magnetoresistance of a high-mobility two-dimensional electron system can be induced by millimeterwave irradiations, leading to zero-resistance states at the oscillation minima. Following a brief overview of the now well-known phenomenon, this paper reports on aspects of more recent experiments on the subject. These are: new zero-resistance states associated wit… ▽ More Giant-amplitude oscillations in dc magnetoresistance of a high-mobility two-dimensional electron system can be induced by millimeterwave irradiations, leading to zero-resistance states at the oscillation minima. Following a brief overview of the now well-known phenomenon, this paper reports on aspects of more recent experiments on the subject. These are: new zero-resistance states associated with multi-photon processes; suppression of Shubnikov-de Haas oscillations by high-frequency microwaves; and microwave photoconductivity of a high-mobility two-dimensional hole system. △ Less

Submitted 20 October, 2004; v1 submitted 16 September, 2004; originally announced September 2004.

Comments: 10 pages and 7 figures, RevTex4;16th International Conference on High Magnetic Fields in Semiconductor Physics (SemiMag16), August 2-6, 2004, Tallahassee; To be published in International Journal of Modern Physics B; References added, typos corrected

Journal ref: Int. J. Mod. Phys. B 18, 3465 (2004)

Weak Localization in an Ultradense 2D Electron Gas in $δ$-doped Silicon

Authors: M. A. Zudov, C. L. Yang, R. R. Du, T. -C. Shen, J. -Y. Ji, J. S. Kline, J. R. Tucker

Abstract: An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can easily reach $\sim 10^{14}$ cm$^{-2}$, exceeding that typically found in GaAs/AlGaAs structures by more than two-three orders of magnitude. We report on a first… ▽ More An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can easily reach $\sim 10^{14}$ cm$^{-2}$, exceeding that typically found in GaAs/AlGaAs structures by more than two-three orders of magnitude. We report on a first systematic characterization of such novel system by means of standard magnetotransport. The main findings include logarithmic temperature dependence of zero-field conductivity and logarithmic negative magnetoresistance. We analyzed the results in terms of scaling theory of localization in two dimensions. △ Less

Submitted 20 May, 2003; originally announced May 2003.

Observation of Apparently Zero-Conductance States in Corbino Samples

Authors: C. L. Yang, M. A. Zudov, T. A. Knuuttila, R. R. Du, L. N. Pfeiffer, K. W. West

Abstract: Using Corbino samples we have observed oscillatory conductance in a high-mobility two-dimensional electron system subjected to crossed microwave and magnetic fields. On the strongest of the oscillation minima the conductance is found to be vanishingly small, possibly indicating an insulating state associated with these minima. Using Corbino samples we have observed oscillatory conductance in a high-mobility two-dimensional electron system subjected to crossed microwave and magnetic fields. On the strongest of the oscillation minima the conductance is found to be vanishingly small, possibly indicating an insulating state associated with these minima. △ Less

Submitted 23 March, 2003; originally announced March 2003.

Comments: 4 pages, 3 figures, RevTex4

Journal ref: Phys. Rev. Lett. 91, 096803 (2003)

Zener Tunneling Between Landau Orbits in a High-Mobility Two-Dimensional Electron Gas

Authors: C. L. Yang, J. Zhang, R. R. Du, J. A. Simmons, J. L. Reno

Abstract: Magnetotransport in a laterally confined two-dimensional electron gas (2DEG) can exhibit modified scattering channels owing to a tilted Hall potential. Transitions of electrons between Landau levels with shifted guiding centers can be accomplished through a Zener tunneling mechanism, and make a significant contribution to the magnetoresistance. A remarkable oscillation effect in weak field magne… ▽ More Magnetotransport in a laterally confined two-dimensional electron gas (2DEG) can exhibit modified scattering channels owing to a tilted Hall potential. Transitions of electrons between Landau levels with shifted guiding centers can be accomplished through a Zener tunneling mechanism, and make a significant contribution to the magnetoresistance. A remarkable oscillation effect in weak field magnetoresistance has been observed in high-mobility 2DEGs in GaAs-AlGa$_{0.3}$As$_{0.7}$ heterostructures, and can be well explained by the Zener mechanism. △ Less

Submitted 21 August, 2002; v1 submitted 22 April, 2002; originally announced April 2002.

Comments: 5 pages, 4 figures. Text slightly shortened, figures resized

Journal ref: Phys. Rev. Lett. 89, 076801(2002)