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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1003.1534 (cond-mat)
[Submitted on 8 Mar 2010 (v1), last revised 11 Mar 2010 (this version, v2)]

Title:Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide

Authors:J. Chen, H. J. Qin, F. Yang, J. Liu, T. Guan, F. M. Qu, G. H. Zhang, J. R. Shi, X. C. Xie, C. L. Yang, K. H. Wu, Y. Q. Li, L. Lu
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Abstract:We report that Bi$_2$Se$_3$ thin films can be epitaxially grown on SrTiO$_{3}$ substrates, which allow for very large tunablity in carrier density with a back-gate. The observed low field magnetoconductivity due to weak anti-localization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest much suppressed bulk conductivity at large negative gate-voltages and a possible role of surface states in the WAL phenomena. This work may pave a way for realizing three-dimensional topological insulators at ambient conditions.
Comments: 5 pages, 4 figures.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1003.1534 [cond-mat.mes-hall]
  (or arXiv:1003.1534v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1003.1534
Journal reference: Phys. Rev. Lett. 105, 176602 (2010)
Related DOI: https://doi.org/10.1103/PhysRevLett.105.176602

Submission history

From: Yongqing Li [view email]
[v1] Mon, 8 Mar 2010 00:28:29 UTC (473 KB)
[v2] Thu, 11 Mar 2010 06:45:49 UTC (473 KB)
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