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Peak splitting and bias fields in ferroelectric hafnia mediated by interface charge effects
Authors:
Moritz Engl,
Wassim Hamouda,
Ines Häusler,
Suzanne Lancaster,
Luca Carpentieri,
Thomas Mikolajick,
Catherine Dubourdieu,
Stefan Slesazeck
Abstract:
The pristine state of hafnium based ferroelectric devices exhibits various unwanted properties, such as imprint and peak splitting, which diminish with bipolar cycling. The incorporation of a niobium oxide layer at different positions in metal-ferroelectric-metal and metal-ferroelectric-insulator-metal stacks is used to modify the pristine state of the device. X-ray photoelectron spectroscopy and…
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The pristine state of hafnium based ferroelectric devices exhibits various unwanted properties, such as imprint and peak splitting, which diminish with bipolar cycling. The incorporation of a niobium oxide layer at different positions in metal-ferroelectric-metal and metal-ferroelectric-insulator-metal stacks is used to modify the pristine state of the device. X-ray photoelectron spectroscopy and transmission electron microscopy measurements are used to investigate the influence of niobium oxide on the zirconium hafnium oxide layer. It is hypothesized that the charged vacancies generated by the introduced niobium oxide in the adjacent zirconium hafnium oxide layer result in an electric bias field that influences the pristine polarization state of the domains. A comparison of different stacks shows that peak splitting in the pristine state is most likely related to the formation of opposing electric bias fields in upwards and downwards polarized domains. Furthermore, the incorporation of niobium oxide in the zirconium hafnium oxide/aluminum oxide capacitor stack in between the ferroelectric and insulating layer leads to a peak splitting free device without imprint, which could be explained by the increased influence of charge trapping near the zirconium hafnium oxide-/niobium oxide and niobium oxide-/aluminum oxide interfaces.
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Submitted 14 March, 2025;
originally announced March 2025.
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Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study
Authors:
Oliver Rehm,
Lutz Baumgarten,
Roberto Guido,
Pia Maria Düring,
Andrei Gloskovskii,
Christoph Schlueter,
Thomas Mikolajick,
Uwe Schroeder,
Martina Müller
Abstract:
Aluminum scandium nitride (Al$_{1-x}$Sc$_x$N) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semiconductor technology. By doping AlN with Sc, the bonds in the polar AlN structure are weakened, which enables ferroelectric switching below the dielectric breakdown field. However, one disadvantage of Sc doping is that it in…
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Aluminum scandium nitride (Al$_{1-x}$Sc$_x$N) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semiconductor technology. By doping AlN with Sc, the bonds in the polar AlN structure are weakened, which enables ferroelectric switching below the dielectric breakdown field. However, one disadvantage of Sc doping is that it increases the material's tendency towards oxidation. In the present study, the oxidation process of tungsten-capped and uncapped Al$_{0.83}$Sc$_{0.17}$N thin films is investigated by hard X-ray photoelectron spectroscopy (HAXPES). The samples had been exposed to air for either two weeks or 6 months. HAXPES spectra indicate the replacement of nitrogen by oxygen, and the tendency of oxygen to favor oxidation with Sc rather than Al. The appearance of an N$_2$ spectral feature thus can be directly related to the oxidation process. We present an oxidation model that mimics these spectroscopic results of the element-specific oxidation processes within Al$_{1-x}$Sc$_x$N. Finally, in operando HAXPES data of uncapped and capped AlScN-capacitor stacks are interpreted using the proposed model.
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Submitted 28 October, 2024;
originally announced October 2024.
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Weight update in ferroelectric memristors with identical and non-identical pulses
Authors:
Suzanne Lancaster,
Maximilien Remillieux,
Moritz Engl,
Viktor Havel,
Claudia Silva,
Xuetao Wang,
Thomas Mikolajick,
Stefan Slesazeck
Abstract:
Ferroelectric tunnel junctions (FTJs) are a class of memristor which promise low-power, scalable, field-driven analog operation. In order to harness their full potential, operation with identical pulses is targeted. In this paper, several weight update schemes for FTJs are investigated, using either non-identical or identical pulses, and with time delays between the pulses ranging from 1 us to 10…
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Ferroelectric tunnel junctions (FTJs) are a class of memristor which promise low-power, scalable, field-driven analog operation. In order to harness their full potential, operation with identical pulses is targeted. In this paper, several weight update schemes for FTJs are investigated, using either non-identical or identical pulses, and with time delays between the pulses ranging from 1 us to 10 s. Experimentally, a method for achieving non-linear weight update with identical pulses at long programming delays is demonstrated by limiting the switching current via a series resistor. Simulations show that this concept can be expanded to achieve weight update in a 1T1C cell by limiting the switching current through a transistor operating in sub-threshold or saturation mode. This leads to a maximum linearity in the weight update of 86% for a dynamic range (maximum switched polarization) of 30 μC/cm2. It is further demonstrated via simulation that engineering the device to achieve a narrower switching peak increases the linearity in scaled devices to >93 % for the same range.
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Submitted 8 August, 2024; v1 submitted 22 July, 2024;
originally announced July 2024.
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Roadmap to Neuromorphic Computing with Emerging Technologies
Authors:
Adnan Mehonic,
Daniele Ielmini,
Kaushik Roy,
Onur Mutlu,
Shahar Kvatinsky,
Teresa Serrano-Gotarredona,
Bernabe Linares-Barranco,
Sabina Spiga,
Sergey Savelev,
Alexander G Balanov,
Nitin Chawla,
Giuseppe Desoli,
Gerardo Malavena,
Christian Monzio Compagnoni,
Zhongrui Wang,
J Joshua Yang,
Ghazi Sarwat Syed,
Abu Sebastian,
Thomas Mikolajick,
Beatriz Noheda,
Stefan Slesazeck,
Bernard Dieny,
Tuo-Hung,
Hou,
Akhil Varri
, et al. (28 additional authors not shown)
Abstract:
The roadmap is organized into several thematic sections, outlining current computing challenges, discussing the neuromorphic computing approach, analyzing mature and currently utilized technologies, providing an overview of emerging technologies, addressing material challenges, exploring novel computing concepts, and finally examining the maturity level of emerging technologies while determining t…
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The roadmap is organized into several thematic sections, outlining current computing challenges, discussing the neuromorphic computing approach, analyzing mature and currently utilized technologies, providing an overview of emerging technologies, addressing material challenges, exploring novel computing concepts, and finally examining the maturity level of emerging technologies while determining the next essential steps for their advancement.
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Submitted 5 July, 2024; v1 submitted 2 July, 2024;
originally announced July 2024.
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A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films
Authors:
Suzanne Lancaster,
Thomas Mikolajick,
Stefan Slesazeck
Abstract:
A wakeup scheme for ferroelectric thin Hf$_{0.5}$Zr$_{0.5}$O$_2$ films is presented, based on a gradual switching approach using multiple short pulses with a voltage amplitude roughly equal to the coercive voltage. This enables the on-chip wakeup and switching operation of ferroelectric devices such as tunnel junctions (FTJs) with identical pulses. After wakeup using alternating pulse trains which…
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A wakeup scheme for ferroelectric thin Hf$_{0.5}$Zr$_{0.5}$O$_2$ films is presented, based on a gradual switching approach using multiple short pulses with a voltage amplitude roughly equal to the coercive voltage. This enables the on-chip wakeup and switching operation of ferroelectric devices such as tunnel junctions (FTJs) with identical pulses. After wakeup using alternating pulse trains which gradually switch the film polarization, FTJ operation is demonstrated to be as effective as after `normal' wakeup, with bipolar pulses of an amplitude larger than the coercive voltage. In this case the voltage applied during wakeup was reduced by 26\%, thereby lowering the required operating power.
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Submitted 14 December, 2023;
originally announced December 2023.
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A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron
Authors:
Paolo Gibertini,
Luca Fehlings,
Suzanne Lancaster,
Quang Duong,
Thomas Mikolajick,
Catherine Dubourdieu,
Stefan Slesazeck,
Erika Covi,
Veeresh Deshpande
Abstract:
Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes. Ferroelectric Tunnel Junctions (FTJs) are ultra low-power memory devices and are well-suited to be integrated in these systems. Here, we present a hybrid FTJ-CMOS Integrate-and-Fire neuron which constitutes a fundamental building block for new…
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Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes. Ferroelectric Tunnel Junctions (FTJs) are ultra low-power memory devices and are well-suited to be integrated in these systems. Here, we present a hybrid FTJ-CMOS Integrate-and-Fire neuron which constitutes a fundamental building block for new-generation neuromorphic networks for edge computing. We demonstrate electrically tunable neural dynamics achievable by tuning the switching of the FTJ device.
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Submitted 4 November, 2022;
originally announced November 2022.
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Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing
Authors:
Suzanne Lancaster,
Quang T. Duong,
Erika Covi,
Thomas Mikolajick,
Stefan Slesazeck
Abstract:
HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching capability together with the low on-current density suggests the application in circuits for massive parallel computation. In this work, we discuss one example circuit of a differential synaptic cell featuring multiple pa…
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HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching capability together with the low on-current density suggests the application in circuits for massive parallel computation. In this work, we discuss one example circuit of a differential synaptic cell featuring multiple parallel connected FTJ devices. Moreover, from the circuit requirements we deduce that the absolute difference in currents (Ion - Ioff) is a more critical figure of merit than the tunneling electroresistance ratio (TER). Based on this, we discuss the potential of FTJ device optimization by means of electrode work function engineering in bilayer HZO/Al2O3 FTJs.
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Submitted 1 November, 2022; v1 submitted 21 September, 2022;
originally announced September 2022.
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Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene
Authors:
Suzanne Lancaster,
Iciar Arnay,
Ruben Guerrero,
Adrían Gudín,
Thomas Mikolajick,
Paolo Perna,
Stefan Slesazeck
Abstract:
Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was investigated. Different metals were deposited as nucleation layers via dc sputtering. Ta, which oxidizes in air to form a sub-stoichiometric oxide, was compared to Pt, which offers a more stable electrode. For thicker in…
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Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was investigated. Different metals were deposited as nucleation layers via dc sputtering. Ta, which oxidizes in air to form a sub-stoichiometric oxide, was compared to Pt, which offers a more stable electrode. For thicker interlayers, Ta leads to unstable switching behavior of the HZO film. Conversely, at smaller thicknesses, a higher Pr can be achieved with an oxidized Ta interlayer. In both cases, Pt offers higher endurance. The choice of interlayer may strongly depend on the required application.
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Submitted 6 September, 2022; v1 submitted 30 August, 2022;
originally announced August 2022.
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Investigating charge trapping in ferroelectric thin films through transient measurements
Authors:
Suzanne Lancaster,
Patrick D Lomenzo,
Moritz Engl,
Bohan Xu,
Thomas Mikolajick,
Uwe Schroeder,
Stefan Slesazeck
Abstract:
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric thin films by analyzing the magnitude and rate of polarization loss. Exemplary measurements have been performed on Hf0.5Zr0.5O2 (HZO) and HZO/Al2O3 films, as a…
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A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric thin films by analyzing the magnitude and rate of polarization loss. Exemplary measurements have been performed on Hf0.5Zr0.5O2 (HZO) and HZO/Al2O3 films, as a function of pulse width and temperature. It is found that the competing effects of the depolarization field, internal bias field and charge trapping lead to a characteristic Gaussian dependence of the rate of polarization loss on the delay time. From this, a charge trapping and screening model could be identified which describes the dynamics of polarization loss on short timescales.
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Submitted 29 June, 2022;
originally announced June 2022.
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C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory
Authors:
Mor M. Dahan,
Evelyn T. Breyer,
Stefan Slesazeck,
Thomas Mikolajick,
Shahar Kvatinsky
Abstract:
Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In this paper, we propose a memory architecture named crossed-AND (C-AND), in which each storage cell consists of a single ferroelectric transistor. The write operation is performed using different write schemes and differe…
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Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In this paper, we propose a memory architecture named crossed-AND (C-AND), in which each storage cell consists of a single ferroelectric transistor. The write operation is performed using different write schemes and different absolute voltages, to account for the asymmetric switching voltages of the FeFET. It enables writing an entire wordline in two consecutive cycles and prevents current and power through the channel of the transistor. During the read operation, the current and power are mostly sensed at a single selected device in each column. The read scheme additionally enables reading an entire word without read errors, even along long bitlines. Our Simulations demonstrate that, in comparison to the previously proposed AND architecture, the C-AND architecture diminishes read errors, reduces write disturbs, enables the usage of longer bitlines, and saves up to 2.92X in memory cell area.
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Submitted 24 May, 2022;
originally announced May 2022.
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A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices
Authors:
Shyam Narayanan,
Erika Covi,
Viktor Havel,
Charlotte Frenkel,
Suzanne Lancaster,
Quang Duong,
Stefan Slesazeck,
Thomas Mikolajick,
Melika Payvand,
Giacomo Indiveri
Abstract:
Novel non-volatile memory devices based on ferroelectric thin films represent a promising emerging technology that is ideally suited for neuromorphic applications. The physical switching mechanism in such films is the nucleation and growth of ferroelectric domains. Since this has a strong dependence on both pulse width and voltage amplitude, it is important to use precise pulsing schemes for a tho…
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Novel non-volatile memory devices based on ferroelectric thin films represent a promising emerging technology that is ideally suited for neuromorphic applications. The physical switching mechanism in such films is the nucleation and growth of ferroelectric domains. Since this has a strong dependence on both pulse width and voltage amplitude, it is important to use precise pulsing schemes for a thorough characterization of their behaviour. In this work, we present an on-chip 120 dB programmable range pulse generator, that can generate pulse widths ranging from 10ns to 10ms $\pm$2.5% which eliminates the RLC bottleneck in the device characterisation setup. We describe the pulse generator design and show how the pulse width can be tuned with high accuracy, using Digital to Analog converters. Finally, we present experimental results measured from the circuit, fabricated using a standard 180nm CMOS technology.
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Submitted 8 February, 2022;
originally announced February 2022.
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Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks
Authors:
Suzanne Lancaster,
Iciar Arnay,
Ruben Guerrero,
Adrian Gudín,
Alejandra Guedeja-Marrón,
Jose Manuel Diez Toledano,
Jan Gärtner,
Alberto Anadón,
Maria Varela,
Julio Camarero,
Thomas Mikolajick,
Paolo Perna,
Stefan Slesazeck
Abstract:
Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD) of ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) directly on graphene (Gr)/Co/heavy metal (HM) epitaxial stacks is investigated via the implementation…
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Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD) of ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) directly on graphene (Gr)/Co/heavy metal (HM) epitaxial stacks is investigated via the implementation of several nucleation methods. With an in-situ method employing an Al$_2$O$_3$ layer, the HZO demonstrates a remanent polarization (2Pr) of 19.2 $μC/cm^2$. An ex-situ, naturally oxidized sputtered Ta layer for nucleation produces a film with 2Pr of 10.81 $μC/cm^2$, but a lower coercive field over the stack and switching enduring over subsequent cycles. Magnetic hysteresis measurements taken before and after ALD deposition show strong perpendicular magnetic anisotropy (PMA), with only slight deviations in the magnetic coercive fields due to the HZO deposition process, thus pointing to a good preservation of the single-layer Gr. X-ray diffraction measurements further confirm that the high-quality interfaces demonstrated in the stack remain unperturbed by the ferroelectric deposition and anneal.
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Submitted 23 March, 2023; v1 submitted 20 September, 2021;
originally announced September 2021.
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Ferroelectric Tunneling Junctions for Edge Computing
Authors:
Erika Covi,
Quang T. Duong,
Suzanne Lancaster,
Viktor Havel,
Jean Coignus,
Justine Barbot,
Ole Richter,
Philip Klein,
Elisabetta Chicca,
Laurent Grenouillet,
Athanasios Dimoulas,
Thomas Mikolajick,
Stefan Slesazeck
Abstract:
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.
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Submitted 5 July, 2021;
originally announced July 2021.
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Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing
Authors:
Benjamin Max,
Michael Hoffmann,
Halid Mulaosmanovic,
Stefan Slesazeck,
Thomas Mikolajick
Abstract:
Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1-xZrxO2; HZO) are a promising candidate for future applications, such as low-power memories and neuromorphic computing. The tunneling electroresistance (TER) is tunable through the polarization state of the HZO film. To circumvent the challenge of fabricating thin ferroelectric HZO layers in the tunneling range of 1-3 nm ran…
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Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1-xZrxO2; HZO) are a promising candidate for future applications, such as low-power memories and neuromorphic computing. The tunneling electroresistance (TER) is tunable through the polarization state of the HZO film. To circumvent the challenge of fabricating thin ferroelectric HZO layers in the tunneling range of 1-3 nm range, ferroelectric/dielectric double layer sandwiched between two symmetric metal electrodes are used. Due to the decoupling of the ferroelectric polarization storage layer and a dielectric tunneling layer with a higher bandgap, a significant TER ratio between the two polarization states is obtained. By exploiting previously reported switching behaviour and the gradual tunability of the resistance, FTJs can be used as potential candidates for the emulation of synapses for neuromorphic computing in spiking neural networks. The implementation of two major components of a synapse are shown: long term depression/potentiation by varying the amplitude/width/number of voltage pulses applied to the artificial FTJ synapse, and spike-timing-dependent-plasticity curves by applying time-delayed voltages at each electrode. These experimental findings show the potential of spiking neural networks and neuromorphic computing that can be implemented with hafnia-based FTJs.
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Submitted 2 July, 2021;
originally announced July 2021.
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2022 Roadmap on Neuromorphic Computing and Engineering
Authors:
Dennis V. Christensen,
Regina Dittmann,
Bernabé Linares-Barranco,
Abu Sebastian,
Manuel Le Gallo,
Andrea Redaelli,
Stefan Slesazeck,
Thomas Mikolajick,
Sabina Spiga,
Stephan Menzel,
Ilia Valov,
Gianluca Milano,
Carlo Ricciardi,
Shi-Jun Liang,
Feng Miao,
Mario Lanza,
Tyler J. Quill,
Scott T. Keene,
Alberto Salleo,
Julie Grollier,
Danijela Marković,
Alice Mizrahi,
Peng Yao,
J. Joshua Yang,
Giacomo Indiveri
, et al. (34 additional authors not shown)
Abstract:
Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exas…
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Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 1018 calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices.
The aim of this Roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The Roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges. We hope that this Roadmap will be a useful resource to readers outside this field, for those who are just entering the field, and for those who are well established in the neuromorphic community.
https://doi.org/10.1088/2634-4386/ac4a83
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Submitted 13 January, 2022; v1 submitted 12 May, 2021;
originally announced May 2021.
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Antiferroelectric negative capacitance from a structural phase transition in zirconia
Authors:
Michael Hoffmann,
Zheng Wang,
Nujhat Tasneem,
Ahmad Zubair,
Prasanna Venkat Ravindran,
Mengkun Tian,
Anthony Gaskell,
Dina Triyoso,
Steven Consiglio,
Kanda Tapily,
Robert Clark,
Jae Hur,
Sai Surya Kiran Pentapati,
Milan Dopita,
Shimeng Yu,
Winston Chern,
Josh Kacher,
Sebastian E. Reyes-Lillo,
Dimitri Antoniadis,
Jayakanth Ravichandran,
Stefan Slesazeck,
Thomas Mikolajick,
Asif Islam Khan
Abstract:
Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO$_2$ and ZrO$_2$) are diffe…
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Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO$_2$ and ZrO$_2$) are different: A non-polar phase transforms into a polar phase by spontaneous inversion symmetry breaking upon the application of an electric field. Here, we show that this structural transition in antiferroelectric ZrO$_2$ gives rise to a negative capacitance, which is promising for overcoming the fundamental limits of energy efficiency in electronics. Our findings provide insight into the thermodynamically 'forbidden' region of the antiferroelectric transition in ZrO$_2$ and extend the concept of negative capacitance beyond ferroelectricity. This shows that negative capacitance is a more general phenomenon than previously thought and can be expected in a much broader range of materials exhibiting structural phase transitions.
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Submitted 21 April, 2021;
originally announced April 2021.
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On the Performance of Dual-Gate Reconfigurable Nanowire Transistors
Authors:
Bin Sun,
Benjamin Richstein,
Patrick Liebisch,
Thorben Frahm,
Stefan Scholz,
Jens Trommer,
Thomas Mikolajick,
Joachim Knoch
Abstract:
We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this end, dual-gate silicon nanowire (SiNW) FETs are fabricated based on anisotropic wet chemical silicon etching and nickel silicidation yielding silicide-SiNW Schottky junctions at source and drain. Whereas in PGAD-configu…
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We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this end, dual-gate silicon nanowire (SiNW) FETs are fabricated based on anisotropic wet chemical silicon etching and nickel silicidation yielding silicide-SiNW Schottky junctions at source and drain. Whereas in PGAD-configuration ambipolar operation is suppressed, switching is deteriorated due to the injection through a Schottky-barrier. Operating the RFET in PGAS configuration yields a switching behavior close to a conventional MOSFET. This, howewer, needs to be traded off against strongly non-linear output characteristics for small bias.
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Submitted 26 February, 2021;
originally announced March 2021.
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Top-down fabricated reconfigurable FET with two symmetric and high-current on-states
Authors:
Maik Simon,
Boshen Liang,
Dustin Fischer,
Martin Knaut,
Alexander Tahn,
Thomas Mikolajick,
Walter M. Weber
Abstract:
We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer characteristics, high on/off current ratios in both configurations and superior current densities in comparison to other top-down fabricated RFETs. Two NiSi2/Si Schottky junct…
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We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer characteristics, high on/off current ratios in both configurations and superior current densities in comparison to other top-down fabricated RFETs. Two NiSi2/Si Schottky junctions are formed inside the wire and gated individually. The narrow omega-gated channel is fabricated by a repeated SiO2 etch and growth sequence and a conformal TiN deposition. The gate and Schottky contact metal work functions and the oxide-induced compressive stress to the Schottky junction are adjusted to result in only factor 1.6 higher p- than n-current for in absolute terms identical gate voltages and identical drain voltages.
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Submitted 2 July, 2020;
originally announced July 2020.
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The inherently absent 2-dimensional electron gas in ultra-pure GaN/AlGaN heterostructures
Authors:
S. Schmult,
S. Wirth,
V. V. Solovyev,
R. Hentschel,
A. Wachowiak,
A. Großer,
I. V. Kukushkin,
T. Mikolajick
Abstract:
Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an inherently existing, highly-mobile 2-dimensional electron gas (2DEG), which results in normally-on transistor characteristics. Here we report on an ultra-pure GaN/AlGaN…
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Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an inherently existing, highly-mobile 2-dimensional electron gas (2DEG), which results in normally-on transistor characteristics. Here we report on an ultra-pure GaN/AlGaN layer stack grown by molecular beam epitaxy, in which such a 2DEG is absent at 300 K in the dark, a property previously not demonstrated. Illumination with ultra-violet light however, generates a 2DEG at the GaN/AlGaN interface and the heterostructure becomes electrically conductive. At temperatures below 150 K this photo-conductivity is persistent with an insignificant dependence of the 2D channel density on the optical excitation power. Residual donor impurity concentrations below 10$^{17}$ cm$^{-3}$ in the GaN/AlGaN layer stack are one necessity for our observations. Fabricated transistors manifest that these characteristics enable a future generation of normally-off as well as light-sensitive GaN-based device concepts.
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Submitted 19 December, 2018;
originally announced December 2018.
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Ferroelectric Negative Capacitance Domain Dynamics
Authors:
Michael Hoffmann,
Asif Islam Khan,
Claudy Serrao,
Zhongyuan Lu,
Sayeef Salahuddin,
Milan Pešić,
Stefan Slesazeck,
Uwe Schroeder,
Thomas Mikolajick
Abstract:
Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-depen…
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Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transient negative capacitance is shown to originate from reverse domain nucleation and unrestricted domain growth. However, with the onset of domain coalescence, the capacitance becomes positive again. The persistence of the negative capacitance state is therefore limited by the speed of domain wall motion. By changing the applied electric field, capacitor area or external resistance, this domain wall velocity can be varied predictably over several orders of magnitude. Additionally, detailed insights into the intrinsic material properties of the ferroelectric are obtainable through these measurements. A new method for reliable extraction of the average negative capacitance of the ferroelectric is presented. Furthermore, a simple analytical model is developed, which accurately describes the negative capacitance transient time as a function of the material properties and the experimental boundary conditions.
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Submitted 19 November, 2017;
originally announced November 2017.
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Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO$_2$
Authors:
Everett D. Grimley,
Tony Schenk,
Thomas Mikolajick,
Uwe Schroeder,
James M. LeBeau
Abstract:
Though the electrical responses of the various polymorphs found in ferroelectric polycrystalline thin film HfO$_2$ are now well characterized, little is currently understood of this novel material's grain sub-structure. In particular, the formation of domain and phase boundaries requires investigation to better understand phase stabilization, switching, and interconversion. Here, we apply scanning…
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Though the electrical responses of the various polymorphs found in ferroelectric polycrystalline thin film HfO$_2$ are now well characterized, little is currently understood of this novel material's grain sub-structure. In particular, the formation of domain and phase boundaries requires investigation to better understand phase stabilization, switching, and interconversion. Here, we apply scanning transmission electron microscopy to investigate the atomic structure of boundaries in these materials. In particular, we find orthorhombic/orthorhombic domain walls and coherent orthorhombic/monoclinic interphase boundaries formed throughout individual grains. The results inform how interphase boundaries can impose strain conditions that may be key to phase stabilization. Moreover, the atomic structure near interphase boundary walls suggests potential for their mobility under bias, which has been speculated to occur in perovskite morphotropic phase boundary systems by mechanisms similar to domain boundary motion.
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Submitted 23 September, 2017;
originally announced September 2017.
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A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device
Authors:
Milan Pešić,
Christopher Künneth,
Michael Hoffmann,
Halid Mulaosmanovic,
Stefan Müller,
Evelyn T. Breyer,
Uwe Schroeder,
Alfred Kersch,
Thomas Mikolajick,
Stefan Slesazeck
Abstract:
The discovery of ferroelectric properties of binary oxides revitalized the interest in ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor technology and ferroelectric memories. However, before hitting the markets, the origin of ferroelectricity and in-depth studies of device characteristics are needed. Establishing a correlation between the performance of the dev…
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The discovery of ferroelectric properties of binary oxides revitalized the interest in ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor technology and ferroelectric memories. However, before hitting the markets, the origin of ferroelectricity and in-depth studies of device characteristics are needed. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for a novel, superior device. Therefore, in this paper a holistic modeling approaches which lead to a better understanding of ferroelectric memories based on hafnium and zirconium oxide is addressed. Starting from describing the stabilization of the ferroelectric phase within the binary oxides via physical modeling the physical mechanisms of the ferroelectric devices are reviewed. Besides, limitations and modeling of the multilevel operation and switching kinetics of ultimately scaled devices as well as the necessity for Landau-Khalatnikov approach are discussed. Furthermore, a device-level model of ferroelectric memory devices that can be used to study the array implementation and their operational schemes are addressed. Finally, a circuit model of the ferroelectric memory device is presented and potential further applications of ferroelectric devices are outlined.
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Submitted 20 September, 2017;
originally announced September 2017.
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The impact of charge compensated and uncompensated strontium defects on the stabilization of the ferroelectric phase in HfO$_2$
Authors:
Robin Materlik,
Christopher Künneth,
Thomas Mikolajick,
Alfred Kersch
Abstract:
Different dopants with their specific dopant concentration can be utilized to produce ferroelectric HfO$_2$ thin films. In this work it is explored for the example of Sr in a comprehensive first-principles study. Density functional calculations reveal structure, formation energy and total energy of the Sr related defects in HfO$_2$. We found the charge compensated defect including an associated ox…
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Different dopants with their specific dopant concentration can be utilized to produce ferroelectric HfO$_2$ thin films. In this work it is explored for the example of Sr in a comprehensive first-principles study. Density functional calculations reveal structure, formation energy and total energy of the Sr related defects in HfO$_2$. We found the charge compensated defect including an associated oxygen vacancy Sr$_\text{Hf}$V$_\text{O}$ to strongly favour the non-ferroelectric, tetragonal P4$_\text{2}$/mnc phase energetically. In contrast, the uncompensated defect without oxygen vacancy Sr$_\text{Hf}$ favours the ferroelectric, orthorhombic Pca2$_\text{1}$ phase. According to the formation energy the uncompensated defect can form easily under oxygen rich conditions in the production process. Low oxygen partial pressure existing over the lifetime promotes the loss of oxygen leading to V$_\text{O}$ and, thus, the destabilization of the ferroelectric, orthorhombic Pca2$_\text{1}$ phase accompanied by an increase of the leakage current. This study attempts to fundamentally explain the stabilization of the ferroelectric, orthorhombic Pca2$_\text{1}$ phase by doping.
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Submitted 25 August, 2017;
originally announced August 2017.
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Substrate effect on the resistive switching in BiFeO3 thin films
Authors:
Yao Shuai,
Xin Ou,
Chuangui Wu,
Wanli Zhang,
Shengqiang Zhou,
Danilo Buerger,
Helfried Reuther,
Stefan Slesazeck,
Thomas Mikolajick,
Manfred Helm,
Heidemarie Schmidt
Abstract:
BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top…
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BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top and the bottom interface. However, thin films on Pt/Ti/SiO2/Si exhibit an obvious resistive switching behavior under forward bias. The conduction mechanisms in BiFeO3 thin films on Pt/sapphire and Pt/Ti/SiO2/Si substrates are discussed to understand the different resistive switching behaviors.
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Submitted 26 September, 2012;
originally announced September 2012.
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Control of rectifying and resistive switching behavior in BiFeO3 thin films
Authors:
Yao Shuai,
Shengqiang Zhou,
Chuangui Wu,
Wanli Zhang,
Danilo Bürger,
Stefan Slesazeck,
Thomas Mikolajick,
Manfred Helm,
Heidemarie Schmidt
Abstract:
BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ~4500 has been achieved. The deposition pressure modifies the concentration of oxygen vacancies a…
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BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ~4500 has been achieved. The deposition pressure modifies the concentration of oxygen vacancies and the rectifying behavior of the Au/BiFeO3 junction, and consequently influences the resistive switching behavior of the whole stack. The switching takes place homogeneously over the entire electrode, and shows a long-term retention.
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Submitted 17 August, 2011;
originally announced August 2011.
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Multiscale Modeling of Nanowire-based Schottky-Barrier Field-Effect Transistors for Sensor Applications
Authors:
Daijiro Nozaki,
Jens Kunstmann,
Felix Zörgiebel,
Walter M. Weber,
Thomas Mikolajick,
Gianaurelio Cuniberti
Abstract:
We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport process. Our approach combines two approaches on different length scales: (1) the finite elements method is used to model realistic device geometries and to calcul…
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We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport process. Our approach combines two approaches on different length scales: (1) the finite elements method is used to model realistic device geometries and to calculate the electrostatic potential across the Schottky-barrier by solving the Poisson equation, and (2) the Landauer approach combined with the method of non-equilibrium Green's functions is employed to calculate the charge transport through the device. Our model correctly reproduces typical I-V characteristics of field-effect transistors and the dependence of the saturated drain current on the gate field and the device geometry are in good agreement with experiments. Our approach is suitable for one-dimensional Schottky-barrier field-effect transistors of arbitrary device geometry and it is intended to be a simulation platform for the development of nanowire-based sensors.
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Submitted 26 May, 2011;
originally announced May 2011.
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Reduced leakage current in BiFeO3 thin films with rectifying contacts
Authors:
Yao Shuai,
Shengqiang Zhou,
Stephan Streit,
Helfried Reuther,
Danilo Bürger,
Stefan Slesazeck,
Thomas Mikolajick,
Manfred Helm,
Heidemarie Schmidt
Abstract:
BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In the present work, we show that only the growth rate of the BiFeO3 films close to the metal contacts has t…
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BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In the present work, we show that only the growth rate of the BiFeO3 films close to the metal contacts has to be increased in order to reduce the leakage current and to observe saturated polarization-electric field hysteresis loops.
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Submitted 19 May, 2011;
originally announced May 2011.
