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Condensed Matter > Materials Science

arXiv:2208.14061 (cond-mat)
[Submitted on 30 Aug 2022 (v1), last revised 6 Sep 2022 (this version, v2)]

Title:Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene

Authors:Suzanne Lancaster, Iciar Arnay, Ruben Guerrero, Adrían Gudín, Thomas Mikolajick, Paolo Perna, Stefan Slesazeck
View a PDF of the paper titled Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene, by Suzanne Lancaster and 6 other authors
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Abstract:Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was investigated. Different metals were deposited as nucleation layers via dc sputtering. Ta, which oxidizes in air to form a sub-stoichiometric oxide, was compared to Pt, which offers a more stable electrode. For thicker interlayers, Ta leads to unstable switching behavior of the HZO film. Conversely, at smaller thicknesses, a higher Pr can be achieved with an oxidized Ta interlayer. In both cases, Pt offers higher endurance. The choice of interlayer may strongly depend on the required application.
Subjects: Materials Science (cond-mat.mtrl-sci); Applied Physics (physics.app-ph)
Cite as: arXiv:2208.14061 [cond-mat.mtrl-sci]
  (or arXiv:2208.14061v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2208.14061
arXiv-issued DOI via DataCite
Related DOI: https://doi.org/10.1109/ISAF51494.2022.9870121
DOI(s) linking to related resources

Submission history

From: Suzanne Lancaster [view email]
[v1] Tue, 30 Aug 2022 08:28:44 UTC (350 KB)
[v2] Tue, 6 Sep 2022 13:57:20 UTC (358 KB)
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