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European Contributions to Fermilab Accelerator Upgrades and Facilities for the DUNE Experiment
Authors:
DUNE Collaboration,
A. Abed Abud,
R. Acciarri,
M. A. Acero,
M. R. Adames,
G. Adamov,
M. Adamowski,
D. Adams,
M. Adinolfi,
C. Adriano,
A. Aduszkiewicz,
J. Aguilar,
F. Akbar,
F. Alemanno,
N. S. Alex,
K. Allison,
M. Alrashed,
A. Alton,
R. Alvarez,
T. Alves,
A. Aman,
H. Amar,
P. Amedo,
J. Anderson,
D. A. Andrade
, et al. (1322 additional authors not shown)
Abstract:
The Proton Improvement Plan (PIP-II) to the FNAL accelerator chain and the Long-Baseline Neutrino Facility (LBNF) will provide the world's most intense neutrino beam to the Deep Underground Neutrino Experiment (DUNE) enabling a wide-ranging physics program. This document outlines the significant contributions made by European national laboratories and institutes towards realizing the first phase o…
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The Proton Improvement Plan (PIP-II) to the FNAL accelerator chain and the Long-Baseline Neutrino Facility (LBNF) will provide the world's most intense neutrino beam to the Deep Underground Neutrino Experiment (DUNE) enabling a wide-ranging physics program. This document outlines the significant contributions made by European national laboratories and institutes towards realizing the first phase of the project with a 1.2 MW neutrino beam. Construction of this first phase is well underway. For DUNE Phase II, this will be closely followed by an upgrade of the beam power to > 2 MW, for which the European groups again have a key role and which will require the continued support of the European community for machine aspects of neutrino physics. Beyond the neutrino beam aspects, LBNF is also responsible for providing unique infrastructure to install and operate the DUNE neutrino detectors at FNAL and at the Sanford Underground Research Facility (SURF). The cryostats for the first two Liquid Argon Time Projection Chamber detector modules at SURF, a contribution of CERN to LBNF, are central to the success of the ongoing execution of DUNE Phase I. Likewise, successful and timely procurement of cryostats for two additional detector modules at SURF will be critical to the success of DUNE Phase II and the overall physics program. The DUNE Collaboration is submitting four main contributions to the 2026 Update of the European Strategy for Particle Physics process. This paper is being submitted to the 'Accelerator technologies' and 'Projects and Large Experiments' streams. Additional inputs related to the DUNE science program, DUNE detector technologies and R&D, and DUNE software and computing, are also being submitted to other streams.
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Submitted 31 March, 2025;
originally announced March 2025.
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DUNE Software and Computing Research and Development
Authors:
DUNE Collaboration,
A. Abed Abud,
R. Acciarri,
M. A. Acero,
M. R. Adames,
G. Adamov,
M. Adamowski,
D. Adams,
M. Adinolfi,
C. Adriano,
A. Aduszkiewicz,
J. Aguilar,
F. Akbar,
F. Alemanno,
N. S. Alex,
K. Allison,
M. Alrashed,
A. Alton,
R. Alvarez,
T. Alves,
A. Aman,
H. Amar,
P. Amedo,
J. Anderson,
D. A. Andrade
, et al. (1322 additional authors not shown)
Abstract:
The international collaboration designing and constructing the Deep Underground Neutrino Experiment (DUNE) at the Long-Baseline Neutrino Facility (LBNF) has developed a two-phase strategy toward the implementation of this leading-edge, large-scale science project. The ambitious physics program of Phase I and Phase II of DUNE is dependent upon deployment and utilization of significant computing res…
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The international collaboration designing and constructing the Deep Underground Neutrino Experiment (DUNE) at the Long-Baseline Neutrino Facility (LBNF) has developed a two-phase strategy toward the implementation of this leading-edge, large-scale science project. The ambitious physics program of Phase I and Phase II of DUNE is dependent upon deployment and utilization of significant computing resources, and successful research and development of software (both infrastructure and algorithmic) in order to achieve these scientific goals. This submission discusses the computing resources projections, infrastructure support, and software development needed for DUNE during the coming decades as an input to the European Strategy for Particle Physics Update for 2026. The DUNE collaboration is submitting four main contributions to the 2026 Update of the European Strategy for Particle Physics process. This submission to the 'Computing' stream focuses on DUNE software and computing. Additional inputs related to the DUNE science program, DUNE detector technologies and R&D, and European contributions to Fermilab accelerator upgrades and facilities for the DUNE experiment, are also being submitted to other streams.
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Submitted 31 March, 2025;
originally announced March 2025.
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The DUNE Phase II Detectors
Authors:
DUNE Collaboration,
A. Abed Abud,
R. Acciarri,
M. A. Acero,
M. R. Adames,
G. Adamov,
M. Adamowski,
D. Adams,
M. Adinolfi,
C. Adriano,
A. Aduszkiewicz,
J. Aguilar,
F. Akbar,
F. Alemanno,
N. S. Alex,
K. Allison,
M. Alrashed,
A. Alton,
R. Alvarez,
T. Alves,
A. Aman,
H. Amar,
P. Amedo,
J. Anderson,
D. A. Andrade
, et al. (1322 additional authors not shown)
Abstract:
The international collaboration designing and constructing the Deep Underground Neutrino Experiment (DUNE) at the Long-Baseline Neutrino Facility (LBNF) has developed a two-phase strategy for the implementation of this leading-edge, large-scale science project. The 2023 report of the US Particle Physics Project Prioritization Panel (P5) reaffirmed this vision and strongly endorsed DUNE Phase I and…
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The international collaboration designing and constructing the Deep Underground Neutrino Experiment (DUNE) at the Long-Baseline Neutrino Facility (LBNF) has developed a two-phase strategy for the implementation of this leading-edge, large-scale science project. The 2023 report of the US Particle Physics Project Prioritization Panel (P5) reaffirmed this vision and strongly endorsed DUNE Phase I and Phase II, as did the previous European Strategy for Particle Physics. The construction of DUNE Phase I is well underway. DUNE Phase II consists of a third and fourth far detector module, an upgraded near detector complex, and an enhanced > 2 MW beam. The fourth FD module is conceived as a 'Module of Opportunity', aimed at supporting the core DUNE science program while also expanding the physics opportunities with more advanced technologies. The DUNE collaboration is submitting four main contributions to the 2026 Update of the European Strategy for Particle Physics process. This submission to the 'Detector instrumentation' stream focuses on technologies and R&D for the DUNE Phase II detectors. Additional inputs related to the DUNE science program, DUNE software and computing, and European contributions to Fermilab accelerator upgrades and facilities for the DUNE experiment, are also being submitted to other streams.
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Submitted 29 March, 2025;
originally announced March 2025.
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The DUNE Science Program
Authors:
DUNE Collaboration,
A. Abed Abud,
R. Acciarri,
M. A. Acero,
M. R. Adames,
G. Adamov,
M. Adamowski,
D. Adams,
M. Adinolfi,
C. Adriano,
A. Aduszkiewicz,
J. Aguilar,
F. Akbar,
F. Alemanno,
N. S. Alex,
K. Allison,
M. Alrashed,
A. Alton,
R. Alvarez,
T. Alves,
A. Aman,
H. Amar,
P. Amedo,
J. Anderson,
D. A. Andrade
, et al. (1322 additional authors not shown)
Abstract:
The international collaboration designing and constructing the Deep Underground Neutrino Experiment (DUNE) at the Long-Baseline Neutrino Facility (LBNF) has developed a two-phase strategy for the implementation of this leading-edge, large-scale science project. The 2023 report of the US Particle Physics Project Prioritization Panel (P5) reaffirmed this vision and strongly endorsed DUNE Phase I and…
▽ More
The international collaboration designing and constructing the Deep Underground Neutrino Experiment (DUNE) at the Long-Baseline Neutrino Facility (LBNF) has developed a two-phase strategy for the implementation of this leading-edge, large-scale science project. The 2023 report of the US Particle Physics Project Prioritization Panel (P5) reaffirmed this vision and strongly endorsed DUNE Phase I and Phase II, as did the previous European Strategy for Particle Physics. The construction of DUNE Phase I is well underway. DUNE Phase II consists of a third and fourth far detector module, an upgraded near detector complex, and an enhanced > 2 MW beam. The fourth FD module is conceived as a 'Module of Opportunity', aimed at supporting the core DUNE science program while also expanding the physics opportunities with more advanced technologies. The DUNE collaboration is submitting four main contributions to the 2026 Update of the European Strategy for Particle Physics process. This submission to the 'Neutrinos and cosmic messengers', 'BSM physics' and 'Dark matter and dark sector' streams focuses on the physics program of DUNE. Additional inputs related to DUNE detector technologies and R&D, DUNE software and computing, and European contributions to Fermilab accelerator upgrades and facilities for the DUNE experiment, are also being submitted to other streams.
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Submitted 29 March, 2025;
originally announced March 2025.
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The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN
Authors:
Maike Gremmel,
Chandrashekhar Prakash Savant,
Debaditya Bhattacharya,
Georg Schönweger,
Debdeep Jena,
Simon Fichtner
Abstract:
This study explores the influence of boron incorporation on the structural and electrical properties of ferroelectric Aluminum Scandium Nitride (Al_{1-x}Sc_xN ) thin films, focusing on leakage currents, wake-up effects, and imprint behavior. Al_{1-x}Sc_xN films were incorporated with varying boron concentrations and analyzed under different deposition conditions to determine their structural integ…
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This study explores the influence of boron incorporation on the structural and electrical properties of ferroelectric Aluminum Scandium Nitride (Al_{1-x}Sc_xN ) thin films, focusing on leakage currents, wake-up effects, and imprint behavior. Al_{1-x}Sc_xN films were incorporated with varying boron concentrations and analyzed under different deposition conditions to determine their structural integrity and ferroelectric performance. Key findings include a reduction in leakage currents, non-trivial alterations in bandgap energy as well as an increasing coercive fields with increasing boron content. Films with 6-13 at.% boron exhibited N-polar growth, while those with 16 at.% boron showed mixed polarity after deposition, which affected their ferroelectric response during the initial switching cycles - as did the addition of boron itself compared to pure Al1-xScxN . With increasing boron content, wake-up became gradually more pronounced and was strongest for pure Al_{1-x}B_xN .
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Submitted 11 March, 2025;
originally announced March 2025.
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Epitaxial high-K AlBN barrier GaN HEMTs
Authors:
Chandrashekhar Savant,
Thai-Son Nguyen,
Kazuki Nomoto,
Saurabh Vishwakarma,
Siyuan Ma,
Akshey Dhar,
Yu-Hsin Chen,
Joseph Casamento,
David J. Smith,
Huili Grace Xing,
Debdeep Jena
Abstract:
We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility transistors that exhibit current densities of more than 0.25 A/mm, clean current saturation, a low pinch-off voltage of -0.43 V, and a peak transconductance of 0.14 S/mm.…
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We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility transistors that exhibit current densities of more than 0.25 A/mm, clean current saturation, a low pinch-off voltage of -0.43 V, and a peak transconductance of 0.14 S/mm. Transistor performance in this preliminary realization is limited by the contact resistance. Capacitance-voltage measurements reveal that introducing 7 % B in the epitaxial AlBN barrier on GaN boosts the relative dielectric constant of AlBN to 16, higher than the AlN dielectric constant of 9. Epitaxial high-K barrier AlBN/GaN HEMTs can thus extend performance beyond the capabilities of current GaN transistors.
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Submitted 26 February, 2025;
originally announced February 2025.
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Growth and characterization of single crystal cubic TaN and hexagonal Ta$_2$N films on c-plane Sapphire
Authors:
Anand Ithepalli,
Amit Rohan Rajapurohita,
Arjan Singh,
Rishabh Singh,
John Wright,
Farhan Rana,
Valla Fatemi,
Huili,
Xing,
Debdeep Jena
Abstract:
Two single crystal phases of tantalum nitride were stabilized on c-plane sapphire using molecular beam epitaxy. The phases were identified to be $δ$-TaN with a rocksalt cubic structure and $γ$-Ta$_2$N with a hexagonal structure. Atomic force microscopy scans revealed smooth surfaces for both the films with root mean square roughnesses less than 0.3 nm. Phase-purity of these films was determined by…
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Two single crystal phases of tantalum nitride were stabilized on c-plane sapphire using molecular beam epitaxy. The phases were identified to be $δ$-TaN with a rocksalt cubic structure and $γ$-Ta$_2$N with a hexagonal structure. Atomic force microscopy scans revealed smooth surfaces for both the films with root mean square roughnesses less than 0.3 nm. Phase-purity of these films was determined by x-ray diffraction. Raman spectrum of the phase-pure $δ$-TaN and $γ$-Ta$_2$N obtained will serve as a future reference to determine phase-purity of tantalum nitride films. Further, the room-temperature and low-temperature electronic transport measurements indicated that both of these phases are metallic at room temperature with resistivities of 586.2 $μΩ$-cm for the 30 nm $δ$-TaN film and 75.5 $μΩ$-cm for the 38 nm $γ$-Ta$_2$N film and become superconducting below 3.6 K and 0.48 K respectively. The superconducting transition temperature reduces with applied magnetic field as expected. Ginzburg-Landau fitting revealed a 0 K critical magnetic field and coherence length of 18 T and 4.2 nm for the 30 nm $δ$-TaN film and 96 mT and 59 nm for the 38 nm $γ$-Ta$_2$N film. These tantalum nitride films are of high interest for superconducting resonators and qubits.
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Submitted 25 February, 2025;
originally announced February 2025.
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Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
Authors:
Yu-Hsin Chen,
Jimy Encomendero,
Huili Grace Xing,
Debdeep Jena
Abstract:
We report the observation of Shubnikov-de Haas (SdH) oscillations in coherently strained, low-dislocation AlN/GaN/AlN quantum wells (QWs), including both undoped and $δ$-doped structures. SdH measurements reveal a single subband occupation in the undoped GaN QW and two subband occupation in the $δ$-doped GaN QW. More importantly, SdH oscillations enable direct measurement of critical two-dimension…
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We report the observation of Shubnikov-de Haas (SdH) oscillations in coherently strained, low-dislocation AlN/GaN/AlN quantum wells (QWs), including both undoped and $δ$-doped structures. SdH measurements reveal a single subband occupation in the undoped GaN QW and two subband occupation in the $δ$-doped GaN QW. More importantly, SdH oscillations enable direct measurement of critical two-dimensional electron gas (2DEG) parameters at the Fermi level: carrier density and ground state energy level, electron effective mass ($m^* \approx 0.289\,m_{\rm e}$ for undoped GaN QW and $m^* \approx 0.298\,m_{\rm e}$ for $δ$-doped GaN QW), and quantum scattering time ($τ_{\rm q} \approx 83.4 \, \text{fs}$ for undoped GaN QW and $τ_{\rm q} \approx 130.6 \, \text{fs}$ for $δ$-doped GaN QW). These findings provide important insights into the fundamental properties of 2DEGs that are strongly quantum confined in the thin GaN QWs, essential for designing nitride heterostructures for high-performance electronic applications.
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Submitted 10 February, 2025;
originally announced February 2025.
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Neutrino Interaction Vertex Reconstruction in DUNE with Pandora Deep Learning
Authors:
DUNE Collaboration,
A. Abed Abud,
R. Acciarri,
M. A. Acero,
M. R. Adames,
G. Adamov,
M. Adamowski,
D. Adams,
M. Adinolfi,
C. Adriano,
A. Aduszkiewicz,
J. Aguilar,
F. Akbar,
F. Alemanno,
N. S. Alex,
K. Allison,
M. Alrashed,
A. Alton,
R. Alvarez,
T. Alves,
A. Aman,
H. Amar,
P. Amedo,
J. Anderson,
C. Andreopoulos
, et al. (1313 additional authors not shown)
Abstract:
The Pandora Software Development Kit and algorithm libraries perform reconstruction of neutrino interactions in liquid argon time projection chamber detectors. Pandora is the primary event reconstruction software used at the Deep Underground Neutrino Experiment, which will operate four large-scale liquid argon time projection chambers at the far detector site in South Dakota, producing high-resolu…
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The Pandora Software Development Kit and algorithm libraries perform reconstruction of neutrino interactions in liquid argon time projection chamber detectors. Pandora is the primary event reconstruction software used at the Deep Underground Neutrino Experiment, which will operate four large-scale liquid argon time projection chambers at the far detector site in South Dakota, producing high-resolution images of charged particles emerging from neutrino interactions. While these high-resolution images provide excellent opportunities for physics, the complex topologies require sophisticated pattern recognition capabilities to interpret signals from the detectors as physically meaningful objects that form the inputs to physics analyses. A critical component is the identification of the neutrino interaction vertex. Subsequent reconstruction algorithms use this location to identify the individual primary particles and ensure they each result in a separate reconstructed particle. A new vertex-finding procedure described in this article integrates a U-ResNet neural network performing hit-level classification into the multi-algorithm approach used by Pandora to identify the neutrino interaction vertex. The machine learning solution is seamlessly integrated into a chain of pattern-recognition algorithms. The technique substantially outperforms the previous BDT-based solution, with a more than 20\% increase in the efficiency of sub-1\,cm vertex reconstruction across all neutrino flavours.
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Submitted 10 February, 2025;
originally announced February 2025.
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Quantum oscillations of holes in GaN
Authors:
Chuan F. C. Chang,
Joseph E. Dill,
Zexuan Zhang,
Jie-Cheng Chen,
Naomi Pieczulewski,
Samuel J. Bader,
Oscar Ayala Valenzuela,
Scott A. Crooker,
Fedor F. Balakirev,
Ross D. McDonald,
Jimy Encomendero,
David A. Muller,
Feliciano Giustino,
Debdeep Jena,
Huili Grace Xing
Abstract:
GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radio-frequency and power electronics. Suffering from inefficient hole doping and low hole mobility, quantum oscillations in p-type GaN have not been observed, hindering fundamental studies of valence bands and hole transpor…
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GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radio-frequency and power electronics. Suffering from inefficient hole doping and low hole mobility, quantum oscillations in p-type GaN have not been observed, hindering fundamental studies of valence bands and hole transport in GaN. Here, we present the first observation of quantum oscillations of holes in GaN. Shubnikov-de Haas (SdH) oscillations in hole resistivity are observed in a quantum-confined two-dimensional hole gas at a GaN/AlN interface, where polarization-induced doping overcomes thermal freeze-out, and a sharp and clean interface boosts the hole mobility enough to unmask the quantum oscillations. These holes degenerately occupy the light and heavy hole bands of GaN and have record-high mobilities of ~1900 cm2/Vs and ~400 cm2/Vs at 3K, respectively. We use magnetic fields up to 72 T to resolve SdH oscillations of holes from both valence bands to extract their respective sheet densities, quantum scattering times, and the effective masses of light holes (0.5-0.7 m0) and heavy holes (1.9 m0). SdH oscillations of heavy and light holes in GaN constitute a direct metrology of valence bands and open new venues for quantum engineering in this technologically important semiconductor. Like strained silicon transistors, strain-engineering of the valence bands of GaN is predicted to dramatically improve hole mobilities by reducing the hole effective mass, a proposal that can now be explored experimentally, particularly in a fully fabricated transistor, using quantum oscillations. Furthermore, the findings of this work suggest a blueprint to create 2D hole gases and observe quantum oscillations of holes in related wide bandgap semiconductors such as SiC and ZnO in which such techniques are not yet possible.
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Submitted 27 January, 2025;
originally announced January 2025.
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Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
Authors:
Joseph E. Dill,
Chuan F. C. Chang,
Debdeep Jena,
Huili Grace Xing
Abstract:
We develop a two-carrier Hall effect model fitting algorithm to analyze temperature-dependent magnetotransport measurements of a high-density ($\sim4\times10^{13}$ cm$^2$/Vs) polarization-induced two-dimensional hole gas (2DHG) in a GaN/AlN heterostructure. Previous transport studies in GaN 2DHGs have reported a two-fold reduction in 2DHG carrier density from room to cryogenic temperature. We demo…
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We develop a two-carrier Hall effect model fitting algorithm to analyze temperature-dependent magnetotransport measurements of a high-density ($\sim4\times10^{13}$ cm$^2$/Vs) polarization-induced two-dimensional hole gas (2DHG) in a GaN/AlN heterostructure. Previous transport studies in GaN 2DHGs have reported a two-fold reduction in 2DHG carrier density from room to cryogenic temperature. We demonstrate that this apparent drop in carrier density is an artifact of assuming one species of carriers when interpreting Hall effect measurements. Using an appropriate two-carrier model, we resolve light hole (LH) and heavy hole (HH) carrier densities congruent with self-consistent Poisson-k$\cdot$p simulations and observe an LH mobility of $\sim$1400 cm$^2$/Vs and HH mobility of $\sim$300 cm$^2$/Vs at 2 K. This report constitutes the first experimental signature of LH band conductivity reported in GaN.
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Submitted 4 December, 2024;
originally announced December 2024.
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Lattice-Matched Multiple Channel AlScN/GaN Heterostructures
Authors:
Thai-Son Nguyen,
Naomi Pieczulewsi,
Chandrashekhar Savant,
Joshua J. P. Cooper,
Joseph Casamento,
Rachel S. Goldman,
David A. Muller,
Huili G. Xing,
Debdeep Jena
Abstract:
AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks depends strongly on the ability to control lattice parameters and surface or interface through growth. This study investigates the molecular beam epitaxy growth and transport properties of AlScN/GaN multilayer heterostru…
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AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks depends strongly on the ability to control lattice parameters and surface or interface through growth. This study investigates the molecular beam epitaxy growth and transport properties of AlScN/GaN multilayer heterostructures. Single layer Al$_{1-x}$Sc$_x$N/GaN heterostructures exhibited lattice-matched composition within $x$ = 0.09 -- 0.11 using substrate (thermocouple) growth temperatures between 330 $ ^\circ$C and 630 $ ^\circ$C. By targeting the lattice-matched Sc composition, pseudomorphic AlScN/GaN multilayer structures with ten and twenty periods were achieved, exhibiting excellent structural and interface properties as confirmed by X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). These multilayer heterostructures exhibited substantial polarization-induced net mobile charge densities of up to 8.24 $\times$ 10$^{14}$/cm$^2$ for twenty channels. The sheet density scales with the number of AlScN/GaN periods. By identifying lattice-matched growth condition and using it to generate multiple conductive channels, this work enhances our understanding of the AlScN/GaN material platform.
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Submitted 11 October, 2024;
originally announced October 2024.
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The track-length extension fitting algorithm for energy measurement of interacting particles in liquid argon TPCs and its performance with ProtoDUNE-SP data
Authors:
DUNE Collaboration,
A. Abed Abud,
B. Abi,
R. Acciarri,
M. A. Acero,
M. R. Adames,
G. Adamov,
M. Adamowski,
D. Adams,
M. Adinolfi,
C. Adriano,
A. Aduszkiewicz,
J. Aguilar,
F. Akbar,
N. S. Alex,
K. Allison,
S. Alonso Monsalve,
M. Alrashed,
A. Alton,
R. Alvarez,
T. Alves,
H. Amar,
P. Amedo,
J. Anderson,
C. Andreopoulos
, et al. (1348 additional authors not shown)
Abstract:
This paper introduces a novel track-length extension fitting algorithm for measuring the kinetic energies of inelastically interacting particles in liquid argon time projection chambers (LArTPCs). The algorithm finds the most probable offset in track length for a track-like object by comparing the measured ionization density as a function of position with a theoretical prediction of the energy los…
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This paper introduces a novel track-length extension fitting algorithm for measuring the kinetic energies of inelastically interacting particles in liquid argon time projection chambers (LArTPCs). The algorithm finds the most probable offset in track length for a track-like object by comparing the measured ionization density as a function of position with a theoretical prediction of the energy loss as a function of the energy, including models of electron recombination and detector response. The algorithm can be used to measure the energies of particles that interact before they stop, such as charged pions that are absorbed by argon nuclei. The algorithm's energy measurement resolutions and fractional biases are presented as functions of particle kinetic energy and number of track hits using samples of stopping secondary charged pions in data collected by the ProtoDUNE-SP detector, and also in a detailed simulation. Additional studies describe the impact of the dE/dx model on energy measurement performance. The method described in this paper to characterize the energy measurement performance can be repeated in any LArTPC experiment using stopping secondary charged pions.
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Submitted 26 December, 2024; v1 submitted 26 September, 2024;
originally announced September 2024.
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DUNE Phase II: Scientific Opportunities, Detector Concepts, Technological Solutions
Authors:
DUNE Collaboration,
A. Abed Abud,
B. Abi,
R. Acciarri,
M. A. Acero,
M. R. Adames,
G. Adamov,
M. Adamowski,
D. Adams,
M. Adinolfi,
C. Adriano,
A. Aduszkiewicz,
J. Aguilar,
F. Akbar,
K. Allison,
S. Alonso Monsalve,
M. Alrashed,
A. Alton,
R. Alvarez,
T. Alves,
H. Amar,
P. Amedo,
J. Anderson,
C. Andreopoulos,
M. Andreotti
, et al. (1347 additional authors not shown)
Abstract:
The international collaboration designing and constructing the Deep Underground Neutrino Experiment (DUNE) at the Long-Baseline Neutrino Facility (LBNF) has developed a two-phase strategy toward the implementation of this leading-edge, large-scale science project. The 2023 report of the US Particle Physics Project Prioritization Panel (P5) reaffirmed this vision and strongly endorsed DUNE Phase I…
▽ More
The international collaboration designing and constructing the Deep Underground Neutrino Experiment (DUNE) at the Long-Baseline Neutrino Facility (LBNF) has developed a two-phase strategy toward the implementation of this leading-edge, large-scale science project. The 2023 report of the US Particle Physics Project Prioritization Panel (P5) reaffirmed this vision and strongly endorsed DUNE Phase I and Phase II, as did the European Strategy for Particle Physics. While the construction of the DUNE Phase I is well underway, this White Paper focuses on DUNE Phase II planning. DUNE Phase-II consists of a third and fourth far detector (FD) module, an upgraded near detector complex, and an enhanced 2.1 MW beam. The fourth FD module is conceived as a "Module of Opportunity", aimed at expanding the physics opportunities, in addition to supporting the core DUNE science program, with more advanced technologies. This document highlights the increased science opportunities offered by the DUNE Phase II near and far detectors, including long-baseline neutrino oscillation physics, neutrino astrophysics, and physics beyond the standard model. It describes the DUNE Phase II near and far detector technologies and detector design concepts that are currently under consideration. A summary of key R&D goals and prototyping phases needed to realize the Phase II detector technical designs is also provided. DUNE's Phase II detectors, along with the increased beam power, will complete the full scope of DUNE, enabling a multi-decadal program of groundbreaking science with neutrinos.
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Submitted 22 August, 2024;
originally announced August 2024.
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In situ etching of \b{eta}-Ga2O3 using tert-butyl chloride in an MOCVD system
Authors:
Cameron A. Gorsak,
Henry J. Bowman,
Katie R. Gann,
Joshua T. Buontempo,
Kathleen T. Smith,
Pushpanshu Tripathi,
Jacob Steele,
Debdeep Jena,
Darrell G. Schlom,
Huili Grace Xing,
Michael O. Thompson,
Hari P. Nair
Abstract:
In this study, we investigate in situ etching of \b{eta}-Ga2O3 in a metal-organic chemical vapor deposition (MOCVD) system using tert-Butyl chloride (TBCl). We report the successful etching of both heteroepitaxial (-201)-oriented and homoepitaxial (010)-oriented \b{eta}-Ga2O3 films over a wide range of substrate temperature, TBCl molar flows, and reactor pressures. We identify that the likely etch…
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In this study, we investigate in situ etching of \b{eta}-Ga2O3 in a metal-organic chemical vapor deposition (MOCVD) system using tert-Butyl chloride (TBCl). We report the successful etching of both heteroepitaxial (-201)-oriented and homoepitaxial (010)-oriented \b{eta}-Ga2O3 films over a wide range of substrate temperature, TBCl molar flows, and reactor pressures. We identify that the likely etchant is HCl (g) formed by the pyrolysis of TBCl in the hydrodynamic boundary layer above the substrate. The temperature dependence of the etch rate reveals two distinct regimes characterized by markedly different apparent activation energies. The extracted apparent activation energies suggest that at temperatures below ~800 °C the etch rate is likely limited by desorption of etch products. The relative etch rates of heteroepitaxial (-201) and homoepitaxial (010) \b{eta}-Ga2O3 were observed to scale by the ratio of the surface energies indicating an anisotropic etch. For (010) homoepitaxial films, relatively smooth post-etch surface morphology was achieved by tuning the etching parameters.
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Submitted 3 December, 2024; v1 submitted 2 August, 2024;
originally announced August 2024.
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First Measurement of the Total Inelastic Cross-Section of Positively-Charged Kaons on Argon at Energies Between 5.0 and 7.5 GeV
Authors:
DUNE Collaboration,
A. Abed Abud,
B. Abi,
R. Acciarri,
M. A. Acero,
M. R. Adames,
G. Adamov,
M. Adamowski,
D. Adams,
M. Adinolfi,
C. Adriano,
A. Aduszkiewicz,
J. Aguilar,
F. Akbar,
K. Allison,
S. Alonso Monsalve,
M. Alrashed,
A. Alton,
R. Alvarez,
T. Alves,
H. Amar,
P. Amedo,
J. Anderson,
C. Andreopoulos,
M. Andreotti
, et al. (1341 additional authors not shown)
Abstract:
ProtoDUNE Single-Phase (ProtoDUNE-SP) is a 770-ton liquid argon time projection chamber that operated in a hadron test beam at the CERN Neutrino Platform in 2018. We present a measurement of the total inelastic cross section of charged kaons on argon as a function of kaon energy using 6 and 7 GeV/$c$ beam momentum settings. The flux-weighted average of the extracted inelastic cross section at each…
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ProtoDUNE Single-Phase (ProtoDUNE-SP) is a 770-ton liquid argon time projection chamber that operated in a hadron test beam at the CERN Neutrino Platform in 2018. We present a measurement of the total inelastic cross section of charged kaons on argon as a function of kaon energy using 6 and 7 GeV/$c$ beam momentum settings. The flux-weighted average of the extracted inelastic cross section at each beam momentum setting was measured to be 380$\pm$26 mbarns for the 6 GeV/$c$ setting and 379$\pm$35 mbarns for the 7 GeV/$c$ setting.
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Submitted 1 August, 2024;
originally announced August 2024.
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Supernova Pointing Capabilities of DUNE
Authors:
DUNE Collaboration,
A. Abed Abud,
B. Abi,
R. Acciarri,
M. A. Acero,
M. R. Adames,
G. Adamov,
M. Adamowski,
D. Adams,
M. Adinolfi,
C. Adriano,
A. Aduszkiewicz,
J. Aguilar,
B. Aimard,
F. Akbar,
K. Allison,
S. Alonso Monsalve,
M. Alrashed,
A. Alton,
R. Alvarez,
T. Alves,
H. Amar,
P. Amedo,
J. Anderson,
D. A. Andrade
, et al. (1340 additional authors not shown)
Abstract:
The determination of the direction of a stellar core collapse via its neutrino emission is crucial for the identification of the progenitor for a multimessenger follow-up. A highly effective method of reconstructing supernova directions within the Deep Underground Neutrino Experiment (DUNE) is introduced. The supernova neutrino pointing resolution is studied by simulating and reconstructing electr…
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The determination of the direction of a stellar core collapse via its neutrino emission is crucial for the identification of the progenitor for a multimessenger follow-up. A highly effective method of reconstructing supernova directions within the Deep Underground Neutrino Experiment (DUNE) is introduced. The supernova neutrino pointing resolution is studied by simulating and reconstructing electron-neutrino charged-current absorption on $^{40}$Ar and elastic scattering of neutrinos on electrons. Procedures to reconstruct individual interactions, including a newly developed technique called ``brems flipping'', as well as the burst direction from an ensemble of interactions are described. Performance of the burst direction reconstruction is evaluated for supernovae happening at a distance of 10 kpc for a specific supernova burst flux model. The pointing resolution is found to be 3.4 degrees at 68% coverage for a perfect interaction-channel classification and a fiducial mass of 40 kton, and 6.6 degrees for a 10 kton fiducial mass respectively. Assuming a 4% rate of charged-current interactions being misidentified as elastic scattering, DUNE's burst pointing resolution is found to be 4.3 degrees (8.7 degrees) at 68% coverage.
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Submitted 14 July, 2024;
originally announced July 2024.
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Ferroelectric AlBN Films by Molecular Beam Epitaxy
Authors:
Chandrashekhar Savant,
Ved Gund,
Kazuki Nomoto,
Takuya Maeda,
Shubham Jadhav,
Joongwon Lee,
Madhav Ramesh,
Eungkyun Kim,
Thai-Son Nguyen,
Yu-Hsin Chen,
Joseph Casamento,
Farhan Rana,
Amit Lal,
Huili,
Xing,
Debdeep Jena
Abstract:
We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr of 15 uC/cm2 and coercive field Ec of 1.45 MV/cm in t…
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We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr of 15 uC/cm2 and coercive field Ec of 1.45 MV/cm in these films are smaller than those recently reported on films deposited by sputtering, due to incomplete wake-up, limited by current leakage. Because AlBN preserves the ultrawide energy bandgap of AlN compared to other nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially integrated with GaN and AlN semiconductors, its development will enable several opportunities for unique electronic, photonic, and memory devices.
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Submitted 17 July, 2024; v1 submitted 12 July, 2024;
originally announced July 2024.
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Dual Policy Reinforcement Learning for Real-time Rebalancing in Bike-sharing Systems
Authors:
Jiaqi Liang,
Defeng Liu,
Sanjay Dominik Jena,
Andrea Lodi,
Thibaut Vidal
Abstract:
Bike-sharing systems play a crucial role in easing traffic congestion and promoting healthier lifestyles. However, ensuring their reliability and user acceptance requires effective strategies for rebalancing bikes. This study introduces a novel approach to address the real-time rebalancing problem with a fleet of vehicles. It employs a dual policy reinforcement learning algorithm that decouples in…
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Bike-sharing systems play a crucial role in easing traffic congestion and promoting healthier lifestyles. However, ensuring their reliability and user acceptance requires effective strategies for rebalancing bikes. This study introduces a novel approach to address the real-time rebalancing problem with a fleet of vehicles. It employs a dual policy reinforcement learning algorithm that decouples inventory and routing decisions, enhancing realism and efficiency compared to previous methods where both decisions were made simultaneously. We first formulate the inventory and routing subproblems as a multi-agent Markov Decision Process within a continuous time framework. Subsequently, we propose a DQN-based dual policy framework to jointly estimate the value functions, minimizing the lost demand. To facilitate learning, a comprehensive simulator is applied to operate under a first-arrive-first-serve rule, which enables the computation of immediate rewards across diverse demand scenarios. We conduct extensive experiments on various datasets generated from historical real-world data, affected by both temporal and weather factors. Our proposed algorithm demonstrates significant performance improvements over previous baseline methods. It offers valuable practical insights for operators and further explores the incorporation of reinforcement learning into real-world dynamic programming problems, paving the way for more intelligent and robust urban mobility solutions.
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Submitted 2 June, 2024;
originally announced June 2024.
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Measurement of Spin-Polarized Photoemission from Wurtzite and Zinc-Blende Gallium Nitride Photocathodes
Authors:
S. J. Levenson,
M. B. Andorf,
B. D. Dickensheets,
I. V. Bazarov,
A. Galdi,
J. Encomendero,
V. V. Protasenko,
D. Jena,
H. G. Xing,
J. M. Maxson
Abstract:
Spin-polarized photoemission from wurtzite and zinc-blende gallium nitride (GaN) photocathodes has been observed and measured for the first time. The p-doped GaN photocathodes were epitaxially grown and activated to negative electron affinity (NEA) with a cesium monolayer deposited on their surfaces. A field-retarding Mott polarimeter was used to measure the spin-polarization of electrons photoemi…
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Spin-polarized photoemission from wurtzite and zinc-blende gallium nitride (GaN) photocathodes has been observed and measured for the first time. The p-doped GaN photocathodes were epitaxially grown and activated to negative electron affinity (NEA) with a cesium monolayer deposited on their surfaces. A field-retarding Mott polarimeter was used to measure the spin-polarization of electrons photoemitted from the top of the valence band. A spectral scan with a tunable optical parametric amplifier (OPA) constructed to provide low-bandwidth light revealed peak spin polarizations of 17% and 29% in the wurtzite and zinc-blende photocathodes, respectively. Zinc-blende GaN results are analyzed with a spin-polarization model accounting for experimental parameters used in the measurements, while possible mechanisms influencing the obtained spin polarization values of wurtzite GaN are discussed.
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Submitted 7 May, 2024;
originally announced May 2024.
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Dynamic Facility Location under Cumulative Customer Demand
Authors:
Warley Almeida Silva,
Margarida Carvalho,
Sanjay Dominik Jena
Abstract:
Dynamic facility location problems aim at placing one or more valuable resources over a planning horizon to meet customer demand. Existing literature commonly assumes that customer demand quantities are defined independently for each time period. In many planning contexts, however, unmet demand carries over to future time periods. Unmet demand at some time periods may therefore affect decisions of…
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Dynamic facility location problems aim at placing one or more valuable resources over a planning horizon to meet customer demand. Existing literature commonly assumes that customer demand quantities are defined independently for each time period. In many planning contexts, however, unmet demand carries over to future time periods. Unmet demand at some time periods may therefore affect decisions of subsequent time periods. This work studies a novel location problem, where the decision maker places facilities over time to capture cumulative customer demand. We propose two mixed-integer programming models for this problem, and show that one of them has a tighter continuous relaxation and allows the representation of more general customer demand behaviour. We characterize the computational complexity for this problem, and analyze which problem characteristics result in NP-hardness. We then propose an exact branch-and-Benders-cut method, and show that this method is approximately five times faster than solving the tighter formulation directly. Our results also quantify the benefit of accounting for cumulative customer demand within the optimization framework, since the corresponding planning solutions perform much better than those obtained by ignoring cumulative demand or employing myopic heuristics. We also draw managerial insights about the service quality perceived by customers when the provider places facilities under cumulative customer demand.
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Submitted 26 March, 2025; v1 submitted 3 May, 2024;
originally announced May 2024.
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Leveraging both faces of polar semiconductor wafers for functional devices
Authors:
Len van Deurzen,
Eungkyun Kim,
Naomi Pieczulewski,
Zexuan Zhang,
Anna Feduniewicz-Zmuda,
Mikolaj Chlipala,
Marcin Siekacz,
David Muller,
Huili Grace Xing,
Debdeep Jena,
Henryk Turski
Abstract:
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wafer perpendicular to the polar axis dramatically different in their physical and chemical properties. In the last three decades, the cation (gallium)…
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Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wafer perpendicular to the polar axis dramatically different in their physical and chemical properties. In the last three decades, the cation (gallium) face of gallium nitride has been used for photonic devices such as LEDs and lasers. Though the cation face has also been predominantly used for electronic devices, the anion (nitrogen) face has recently shown promise for high electron mobility transistors due to favorable polarization discontinuities. In this work we introduce dualtronics, showing that it is possible to make photonic devices on the cation face, and electronic devices on the anion face, of the same semiconductor wafer. This opens the possibility for leveraging both faces of polar semiconductors in a single structure, where electronic, photonic, and acoustic properties can be implemented on opposite faces of the same wafer, dramatically enhancing the functional capabilities of this revolutionary semiconductor family.
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Submitted 25 September, 2024; v1 submitted 4 April, 2024;
originally announced April 2024.
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Performance of a modular ton-scale pixel-readout liquid argon time projection chamber
Authors:
DUNE Collaboration,
A. Abed Abud,
B. Abi,
R. Acciarri,
M. A. Acero,
M. R. Adames,
G. Adamov,
M. Adamowski,
D. Adams,
M. Adinolfi,
C. Adriano,
A. Aduszkiewicz,
J. Aguilar,
B. Aimard,
F. Akbar,
K. Allison,
S. Alonso Monsalve,
M. Alrashed,
A. Alton,
R. Alvarez,
T. Alves,
H. Amar,
P. Amedo,
J. Anderson,
D. A. Andrade
, et al. (1340 additional authors not shown)
Abstract:
The Module-0 Demonstrator is a single-phase 600 kg liquid argon time projection chamber operated as a prototype for the DUNE liquid argon near detector. Based on the ArgonCube design concept, Module-0 features a novel 80k-channel pixelated charge readout and advanced high-coverage photon detection system. In this paper, we present an analysis of an eight-day data set consisting of 25 million cosmi…
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The Module-0 Demonstrator is a single-phase 600 kg liquid argon time projection chamber operated as a prototype for the DUNE liquid argon near detector. Based on the ArgonCube design concept, Module-0 features a novel 80k-channel pixelated charge readout and advanced high-coverage photon detection system. In this paper, we present an analysis of an eight-day data set consisting of 25 million cosmic ray events collected in the spring of 2021. We use this sample to demonstrate the imaging performance of the charge and light readout systems as well as the signal correlations between the two. We also report argon purity and detector uniformity measurements, and provide comparisons to detector simulations.
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Submitted 5 March, 2024;
originally announced March 2024.
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A Reinforcement Learning Approach for Dynamic Rebalancing in Bike-Sharing System
Authors:
Jiaqi Liang,
Sanjay Dominik Jena,
Defeng Liu,
Andrea Lodi
Abstract:
Bike-Sharing Systems provide eco-friendly urban mobility, contributing to the alleviation of traffic congestion and to healthier lifestyles. Efficiently operating such systems and maintaining high customer satisfaction is challenging due to the stochastic nature of trip demand, leading to full or empty stations. Devising effective rebalancing strategies using vehicles to redistribute bikes among s…
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Bike-Sharing Systems provide eco-friendly urban mobility, contributing to the alleviation of traffic congestion and to healthier lifestyles. Efficiently operating such systems and maintaining high customer satisfaction is challenging due to the stochastic nature of trip demand, leading to full or empty stations. Devising effective rebalancing strategies using vehicles to redistribute bikes among stations is therefore of uttermost importance for operators. As a promising alternative to classical mathematical optimization, reinforcement learning is gaining ground to solve sequential decision-making problems. This paper introduces a spatio-temporal reinforcement learning algorithm for the dynamic rebalancing problem with multiple vehicles. We first formulate the problem as a Multi-agent Markov Decision Process in a continuous time framework. This allows for independent and cooperative vehicle rebalancing, eliminating the impractical restriction of time-discretized models where vehicle departures are synchronized. A comprehensive simulator under the first-arrive-first-serve rule is then developed to facilitate the learning process by computing immediate rewards under diverse demand scenarios. To estimate the value function and learn the rebalancing policy, various Deep Q-Network configurations are tested, minimizing the lost demand. Experiments are carried out on various datasets generated from historical data, affected by both temporal and weather factors. The proposed algorithms outperform benchmarks, including a multi-period Mixed-Integer Programming model, in terms of lost demand. Once trained, it yields immediate decisions, making it suitable for real-time applications. Our work offers practical insights for operators and enriches the integration of reinforcement learning into dynamic rebalancing problems, paving the way for more intelligent and robust urban mobility solutions.
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Submitted 5 February, 2024;
originally announced February 2024.
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Doping Liquid Argon with Xenon in ProtoDUNE Single-Phase: Effects on Scintillation Light
Authors:
DUNE Collaboration,
A. Abed Abud,
B. Abi,
R. Acciarri,
M. A. Acero,
M. R. Adames,
G. Adamov,
M. Adamowski,
D. Adams,
M. Adinolfi,
C. Adriano,
A. Aduszkiewicz,
J. Aguilar,
B. Aimard,
F. Akbar,
K. Allison,
S. Alonso Monsalve,
M. Alrashed,
A. Alton,
R. Alvarez,
H. Amar Es-sghir,
P. Amedo,
J. Anderson,
D. A. Andrade,
C. Andreopoulos
, et al. (1297 additional authors not shown)
Abstract:
Doping of liquid argon TPCs (LArTPCs) with a small concentration of xenon is a technique for light-shifting and facilitates the detection of the liquid argon scintillation light. In this paper, we present the results of the first doping test ever performed in a kiloton-scale LArTPC. From February to May 2020, we carried out this special run in the single-phase DUNE Far Detector prototype (ProtoDUN…
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Doping of liquid argon TPCs (LArTPCs) with a small concentration of xenon is a technique for light-shifting and facilitates the detection of the liquid argon scintillation light. In this paper, we present the results of the first doping test ever performed in a kiloton-scale LArTPC. From February to May 2020, we carried out this special run in the single-phase DUNE Far Detector prototype (ProtoDUNE-SP) at CERN, featuring 720 t of total liquid argon mass with 410 t of fiducial mass. A 5.4 ppm nitrogen contamination was present during the xenon doping campaign. The goal of the run was to measure the light and charge response of the detector to the addition of xenon, up to a concentration of 18.8 ppm. The main purpose was to test the possibility for reduction of non-uniformities in light collection, caused by deployment of photon detectors only within the anode planes. Light collection was analysed as a function of the xenon concentration, by using the pre-existing photon detection system (PDS) of ProtoDUNE-SP and an additional smaller set-up installed specifically for this run. In this paper we first summarize our current understanding of the argon-xenon energy transfer process and the impact of the presence of nitrogen in argon with and without xenon dopant. We then describe the key elements of ProtoDUNE-SP and the injection method deployed. Two dedicated photon detectors were able to collect the light produced by xenon and the total light. The ratio of these components was measured to be about 0.65 as 18.8 ppm of xenon were injected. We performed studies of the collection efficiency as a function of the distance between tracks and light detectors, demonstrating enhanced uniformity of response for the anode-mounted PDS. We also show that xenon doping can substantially recover light losses due to contamination of the liquid argon by nitrogen.
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Submitted 2 August, 2024; v1 submitted 2 February, 2024;
originally announced February 2024.
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Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates
Authors:
Shivali Agrawal,
Len van Deurzen,
Jimy Encomendero,
Joseph E. Dill,
Hsin Wei,
Huang,
Vladimir Protasenko,
Huili,
Xing,
Debdeep Jena
Abstract:
Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of $V_{\text{bi}}\approx5.5$ V, a minimum room temperature ideality factor of $η\approx 1.63$, and more than 12 orders of current modulation at room temperature. Stable…
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Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of $V_{\text{bi}}\approx5.5$ V, a minimum room temperature ideality factor of $η\approx 1.63$, and more than 12 orders of current modulation at room temperature. Stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300$^\circ$C. The one-sided n$^{+}$-p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance-voltage profile. The measured average mobile hole density is $p \sim 5.7 \times 10^{17}$ cm$^{-3}$, in close agreement with what is theoretically expected from distributed polarization doping. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n$^{+}$ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization doping enables ultrawide bandgap semiconductor heterojunction p-n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments.
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Submitted 13 December, 2023;
originally announced December 2023.
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Accumulation and removal of Si impurities on $β-Ga_2O_3$ arising from ambient air exposure
Authors:
J. P. McCandless,
C. A. Gorsak,
V. Protasenko,
D. G. Schlom,
Michael O. Thompson,
H. G. Xing,
D. Jena,
H. P. Nair
Abstract:
Here we report that the source of Si impurities commonly observed on (010) $β-Ga_2O_3$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) $β-Ga_2O_3$ surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affec…
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Here we report that the source of Si impurities commonly observed on (010) $β-Ga_2O_3$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) $β-Ga_2O_3$ surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affects transport properties and lateral transistor performance. After the HF treatment the sample must be immediately put under vacuum, for the Si fully returns within 10 minutes of additional air exposure. Lastly, we demonstrate that performing a 30 minute HF (49%) treatment on the substrate before growth has no deleterious effect on the structure or on the epitaxy surface after subsequent $Ga_2O_3$ growth.
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Submitted 11 December, 2023;
originally announced December 2023.
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The DUNE Far Detector Vertical Drift Technology, Technical Design Report
Authors:
DUNE Collaboration,
A. Abed Abud,
B. Abi,
R. Acciarri,
M. A. Acero,
M. R. Adames,
G. Adamov,
M. Adamowski,
D. Adams,
M. Adinolfi,
C. Adriano,
A. Aduszkiewicz,
J. Aguilar,
B. Aimard,
F. Akbar,
K. Allison,
S. Alonso Monsalve,
M. Alrashed,
A. Alton,
R. Alvarez,
H. Amar,
P. Amedo,
J. Anderson,
D. A. Andrade,
C. Andreopoulos
, et al. (1304 additional authors not shown)
Abstract:
DUNE is an international experiment dedicated to addressing some of the questions at the forefront of particle physics and astrophysics, including the mystifying preponderance of matter over antimatter in the early universe. The dual-site experiment will employ an intense neutrino beam focused on a near and a far detector as it aims to determine the neutrino mass hierarchy and to make high-precisi…
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DUNE is an international experiment dedicated to addressing some of the questions at the forefront of particle physics and astrophysics, including the mystifying preponderance of matter over antimatter in the early universe. The dual-site experiment will employ an intense neutrino beam focused on a near and a far detector as it aims to determine the neutrino mass hierarchy and to make high-precision measurements of the PMNS matrix parameters, including the CP-violating phase. It will also stand ready to observe supernova neutrino bursts, and seeks to observe nucleon decay as a signature of a grand unified theory underlying the standard model.
The DUNE far detector implements liquid argon time-projection chamber (LArTPC) technology, and combines the many tens-of-kiloton fiducial mass necessary for rare event searches with the sub-centimeter spatial resolution required to image those events with high precision. The addition of a photon detection system enhances physics capabilities for all DUNE physics drivers and opens prospects for further physics explorations. Given its size, the far detector will be implemented as a set of modules, with LArTPC designs that differ from one another as newer technologies arise.
In the vertical drift LArTPC design, a horizontal cathode bisects the detector, creating two stacked drift volumes in which ionization charges drift towards anodes at either the top or bottom. The anodes are composed of perforated PCB layers with conductive strips, enabling reconstruction in 3D. Light-trap-style photon detection modules are placed both on the cryostat's side walls and on the central cathode where they are optically powered.
This Technical Design Report describes in detail the technical implementations of each subsystem of this LArTPC that, together with the other far detector modules and the near detector, will enable DUNE to achieve its physics goals.
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Submitted 5 December, 2023;
originally announced December 2023.
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Growth, catalysis and faceting of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$ by molecular beam epitaxy
Authors:
Martin S. Williams,
Manuel Alonso-Orts,
Marco Schowalter,
Alexander Karg,
Sushma Raghuvansy,
Jon P. McCandless,
Debdeep Jena,
Andreas Rosenauer,
Martin Eickhoff,
Patrick Vogt
Abstract:
The growth of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$(10$\bar{1}$0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By systematically exploring the parameter space accessed by MBE and MOCATAXY, phase-pure $α$-Ga$_2$O$_3$(10$\bar{1}$0) and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$(10$\bar{1}$0) thin films are realized. The…
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The growth of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$(10$\bar{1}$0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By systematically exploring the parameter space accessed by MBE and MOCATAXY, phase-pure $α$-Ga$_2$O$_3$(10$\bar{1}$0) and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$(10$\bar{1}$0) thin films are realized. The presence of In on the $α$-Ga$_2$O$_3$ growth surface remarkably expands its growth window far into the metal-rich flux regime and to higher growth temperatures. With increasing O-to-Ga flux ratio ($R_{\text{O}}$), In incorporates into $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ up to $x \leq 0.08$. Upon a critical thickness, $β$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ nucleates and subsequently heteroepitaxially grows on top of $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ facets. Metal-rich MOCATAXY growth conditions, where $α$-Ga$_2$O$_3$ would not conventionally stabilize, lead to single-crystalline $α$-Ga$_2$O$_3$ with negligible In incorporation and improved surface morphology. Higher $T_{\text{G}}$ further results in single-crystalline $α$-Ga$_2$O$_3$ with well-defined terraces and step edges at their surfaces. For $R_{\text{O}} \leq 0.53$, In acts as a surfactant on the $α$-Ga$_2$O$_3$ growth surface by favoring step edges, while for $R_{\text{O}} \geq 0.8$, In incorporates and leads to a-plane $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ faceting and the subsequent ($\bar{2}$01) $β$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ growth on top. Thin film analysis by STEM reveals highly crystalline $α$-Ga$_2$O$_3$ layers and interfaces. We provide a phase diagram to guide the MBE and MOCATAXY growth of single-crystalline $α$-Ga$_2$O$_3$ on $α$-Al$_2$O$_3$(10$\bar{1}$0).
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Submitted 21 November, 2023;
originally announced November 2023.
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Measurement of the Multi-Neutron $\barν_μ$ Charged Current Differential Cross Section at Low Available Energy on Hydrocarbon
Authors:
A. Olivier,
T. Cai,
S. Akhter,
Z. Ahmad Dar,
V. Ansari,
M. V. Ascencio,
M. Sajjad Athar,
A. Bashyal,
A. Bercellie,
M. Betancourt,
J. L. Bonilla,
A. Bravar,
H. Budd,
G. Caceres,
G. A. Díaz,
J. Felix,
L. Fields,
A. Filkins,
R. Fine,
A. M. Gago,
P. K. Gaur,
S. M. Gilligan,
R. Gran,
E. Granados,
D. A. Harris
, et al. (36 additional authors not shown)
Abstract:
Neutron production in antineutrino interactions can lead to bias in energy reconstruction in neutrino oscillation experiments, but these interactions have rarely been studied. MINERvA previously studied neutron production at an average antineutrino energy of ~3 GeV in 2016 and found deficiencies in leading models. In this paper, the MINERvA 6 GeV average antineutrino energy data set is shown to ha…
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Neutron production in antineutrino interactions can lead to bias in energy reconstruction in neutrino oscillation experiments, but these interactions have rarely been studied. MINERvA previously studied neutron production at an average antineutrino energy of ~3 GeV in 2016 and found deficiencies in leading models. In this paper, the MINERvA 6 GeV average antineutrino energy data set is shown to have similar disagreements. A measurement of the cross section for an antineutrino to produce two or more neutrons and have low visible energy is presented as an experiment-independent way to explore neutron production modeling. This cross section disagrees with several leading models' predictions. Neutron modeling techniques from nuclear physics are used to quantify neutron detection uncertainties on this result.
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Submitted 21 November, 2023; v1 submitted 25 October, 2023;
originally announced October 2023.
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Epitaxial lattice-matched Al$_{0.89}$Sc$_{0.11}$N/GaN distributed Bragg reflectors
Authors:
Len van Deurzen,
Thai-Son Nguyen,
Joseph Casamento,
Huili Grace Xing,
Debdeep Jena
Abstract:
We demonstrate epitaxial lattice-matched Al$_{0.89}$Sc$_{0.11}$N/GaN ten and twenty period distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma-enhanced molecular beam epitaxy (PA-MBE). Resulting from a rapid increase of in-plane lattice coefficient as scandium is incorporated into AlScN, we measure a lattice-matched condition to $c$-plane GaN for a Sc content…
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We demonstrate epitaxial lattice-matched Al$_{0.89}$Sc$_{0.11}$N/GaN ten and twenty period distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma-enhanced molecular beam epitaxy (PA-MBE). Resulting from a rapid increase of in-plane lattice coefficient as scandium is incorporated into AlScN, we measure a lattice-matched condition to $c$-plane GaN for a Sc content of just 11\%, resulting in a large refractive index mismatch $\mathrm{Δn}$ greater than 0.3 corresponding to an index contrast of $\mathrm{Δn/n_{GaN}}$ = 0.12 with GaN. The DBRs demonstrated here are designed for a peak reflectivity at a wavelength of 400 nm reaching a reflectivity of 0.98 for twenty periods. It is highlighted that AlScN/GaN multilayers require fewer periods for a desired reflectivity than other lattice-matched Bragg reflectors such as those based on AlInN/GaN multilayers.
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Submitted 28 September, 2023;
originally announced September 2023.
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Optical Dipole Structure and Orientation of GaN Defect Single-Photon Emitters
Authors:
Yifei Geng,
Debdeep Jena,
Gregory D. Fuchs,
Warren R. Zipfel,
Farhan Rana
Abstract:
GaN has recently been shown to host bright, photostable, defect single photon emitters in the 600-700 nm wavelength range that are promising for quantum applications. The nature and origin of these defect emitters remain elusive. In this work, we study the optical dipole structures and orientations of these defect emitters using the defocused imaging technique. In this technique, the far-field rad…
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GaN has recently been shown to host bright, photostable, defect single photon emitters in the 600-700 nm wavelength range that are promising for quantum applications. The nature and origin of these defect emitters remain elusive. In this work, we study the optical dipole structures and orientations of these defect emitters using the defocused imaging technique. In this technique, the far-field radiation pattern of an emitter in the Fourier plane is imaged to obtain information about the structure of the optical dipole moment and its orientation in 3D. Our experimental results, backed by numerical simulations, show that these defect emitters in GaN exhibit a single dipole moment that is oriented almost perpendicular to the wurtzite crystal c-axis. Data collected from many different emitters shows that the angular orientation of the dipole moment in the plane perpendicular to the c-axis exhibits a distribution that shows peaks centered at the angles corresponding to the nearest Ga-N bonds and also at the angles corresponding to the nearest Ga-Ga (or N-N) directions. Moreover, the in-plane angular distribution shows little difference among defect emitters with different emission wavelengths in the 600-700 nm range. Our work sheds light on the nature and origin of these GaN defect emitters.
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Submitted 29 June, 2023;
originally announced June 2023.
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Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Authors:
Len van Deurzen,
Jashan Singhal,
Jimy Encomendero,
Naomi Pieczulewski,
Celesta Chang,
YongJin Cho,
David Anthony Muller,
Huili Grace Xing,
Debdeep Jena,
Oliver Brandt,
Jonas Lähnemann
Abstract:
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the prevalent donor with an exciton binding energy of 28 meV, and a much increased intensity of the emission…
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Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the prevalent donor with an exciton binding energy of 28 meV, and a much increased intensity of the emission from free excitons. The dominant donor in these layers is characterized by an associated exciton binding energy of 13 meV. The observation of excited exciton states up to the exciton continuum allows us to directly extract the $Γ_{5}$ free exciton binding energy of 57 meV.
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Submitted 23 July, 2023; v1 submitted 17 May, 2023;
originally announced May 2023.
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Impact of cross-section uncertainties on supernova neutrino spectral parameter fitting in the Deep Underground Neutrino Experiment
Authors:
DUNE Collaboration,
A. Abed Abud,
B. Abi,
R. Acciarri,
M. A. Acero,
M. R. Adames,
G. Adamov,
M. Adamowski,
D. Adams,
M. Adinolfi,
C. Adriano,
A. Aduszkiewicz,
J. Aguilar,
Z. Ahmad,
J. Ahmed,
B. Aimard,
F. Akbar,
K. Allison,
S. Alonso Monsalve,
M. Alrashed,
A. Alton,
R. Alvarez,
P. Amedo,
J. Anderson,
D. A. Andrade
, et al. (1294 additional authors not shown)
Abstract:
A primary goal of the upcoming Deep Underground Neutrino Experiment (DUNE) is to measure the $\mathcal{O}(10)$ MeV neutrinos produced by a Galactic core-collapse supernova if one should occur during the lifetime of the experiment. The liquid-argon-based detectors planned for DUNE are expected to be uniquely sensitive to the $ν_e$ component of the supernova flux, enabling a wide variety of physics…
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A primary goal of the upcoming Deep Underground Neutrino Experiment (DUNE) is to measure the $\mathcal{O}(10)$ MeV neutrinos produced by a Galactic core-collapse supernova if one should occur during the lifetime of the experiment. The liquid-argon-based detectors planned for DUNE are expected to be uniquely sensitive to the $ν_e$ component of the supernova flux, enabling a wide variety of physics and astrophysics measurements. A key requirement for a correct interpretation of these measurements is a good understanding of the energy-dependent total cross section $σ(E_ν)$ for charged-current $ν_e$ absorption on argon. In the context of a simulated extraction of supernova $ν_e$ spectral parameters from a toy analysis, we investigate the impact of $σ(E_ν)$ modeling uncertainties on DUNE's supernova neutrino physics sensitivity for the first time. We find that the currently large theoretical uncertainties on $σ(E_ν)$ must be substantially reduced before the $ν_e$ flux parameters can be extracted reliably: in the absence of external constraints, a measurement of the integrated neutrino luminosity with less than 10\% bias with DUNE requires $σ(E_ν)$ to be known to about 5%. The neutrino spectral shape parameters can be known to better than 10% for a 20% uncertainty on the cross-section scale, although they will be sensitive to uncertainties on the shape of $σ(E_ν)$. A direct measurement of low-energy $ν_e$-argon scattering would be invaluable for improving the theoretical precision to the needed level.
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Submitted 7 July, 2023; v1 submitted 29 March, 2023;
originally announced March 2023.
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Defeating Broken Symmetry with Doping: Symmetric Resonant Tunneling in Noncentrosymetric Heterostructures
Authors:
Jimy Encomendero,
Vladimir Protasenko,
Debdeep Jena,
Huili Grace Xing
Abstract:
Resonant tunneling transport in polar heterostructures is intimately connected to the polarization fields emerging from the geometric Berry-phase. In these structures, quantum confinement results not only in a discrete electronic spectrum, but also in built-in polarization charges exhibiting a broken inversion symmetry along the transport direction. Thus, electrons undergo highly asymmetric quantu…
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Resonant tunneling transport in polar heterostructures is intimately connected to the polarization fields emerging from the geometric Berry-phase. In these structures, quantum confinement results not only in a discrete electronic spectrum, but also in built-in polarization charges exhibiting a broken inversion symmetry along the transport direction. Thus, electrons undergo highly asymmetric quantum interference effects with respect to the direction of current flow. By employing doping to counter the broken symmetry, we deterministically control the resonant transmission through GaN/AlN resonant tunneling diodes and experimentally demonstrate the recovery of symmetric resonant tunneling injection across the noncentrosymmetric double-barrier potential.
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Submitted 15 March, 2023;
originally announced March 2023.
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Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics
Authors:
Jimy Encomendero,
Vladimir Protasenko,
Farhan Rana,
Debdeep Jena,
Huili Grace Xing
Abstract:
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately d…
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The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric resonant injection. Thanks to a high doping density, negative differential conductance is observed under both bias polarities of GaN/AlN resonant tunneling diodes (RTDs). Moreover, our analytical model reveals a lower bound for the minimum resonant-tunneling voltage achieved via uniform doping, owing to the dopant solubility limit. Charge storage dynamics is also studied by impedance measurements, showing that at close-to-equilibrium conditions, polar RTDs behave effectively as parallel-plate capacitors. These mechanisms are completely reproduced by our analytical model, providing a theoretical framework useful in the design and analysis of polar resonant-tunneling devices.
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Submitted 15 March, 2023;
originally announced March 2023.
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Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures
Authors:
Jimy Encomendero,
Vladimir Protasenko,
Berardi Sensale-Rodriguez,
Patrick Fay,
Farhan Rana,
Debdeep Jena,
Huili Grace Xing
Abstract:
The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE. In-situ electron diffraction is employed to monitor the number of monolayers incorporated into each tunneling barrier. Using this precise epitaxial control at the…
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The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE. In-situ electron diffraction is employed to monitor the number of monolayers incorporated into each tunneling barrier. Using this precise epitaxial control at the monolayer level, we demonstrate exponential modulation of the resonant tunneling current as a function of barrier thickness. Both the peak voltage and characteristic threshold bias exhibit a dependence on barrier thickness as a result of the intense electric fields present in the polar heterostructures. To get further insight into the asymmetric tunneling injection, we present an analytical theory for tunneling transport across polar heterostructures. A general expression for the resonant tunneling current with contributions from coherent and sequential tunneling processes is introduced. After applying this theory to the case of GaN/AlN RTDs, their experimental current-voltage characteristics are reproduced over both bias polarities, with tunneling currents spanning several orders of magnitude. This agreement allows us to elucidate the role played by the internal polarization fields on the magnitude of the tunneling current and broadening of the resonant line shape. Under reverse bias, we identify new tunneling features originating from highly attenuated resonant tunneling phenomena, which are completely captured by our model. Our analytical model, provides a simple expression which reveals the connection between the polar RTD design parameters and its current-voltage characteristics. This new theory paves the way for the design of polar resonant tunneling devices exhibiting efficient resonant current injection and enhanced tunneling dynamics, as required in various practical applications.
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Submitted 15 March, 2023;
originally announced March 2023.
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Fractional difference sequence spaces via Pascal mean
Authors:
Salila Dutta,
Diptimayee Jena
Abstract:
The main purpose of this article is to introduce Pascal difference sequence spaces of fractional order $ τ$ over the sequence space $\ell_p$ and $\ell_\infty$. Some topological properties of these spaces are considered here along with the Schauder basis, $α -,β-$ and $γ-$duals of the spaces.
The main purpose of this article is to introduce Pascal difference sequence spaces of fractional order $ τ$ over the sequence space $\ell_p$ and $\ell_\infty$. Some topological properties of these spaces are considered here along with the Schauder basis, $α -,β-$ and $γ-$duals of the spaces.
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Submitted 4 March, 2023;
originally announced March 2023.
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FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors
Authors:
J. Casamento,
K. Nomoto,
T. S. Nguyen,
H. Lee,
C. Savant,
L. Li,
A. Hickman,
T. Maeda,
J. Encomendero,
V. Gund,
A. Lal,
J. C. M. Hwang,
H. G. Xing,
D. Jena
Abstract:
We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high…
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We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high K and ferroelectric barriers to date to deliver the highest on currents at 4 A/mm, and highest speed AlScN transistors with fmax larger than 150 GHz observed in any ferroelectric transistor. The FerroHEMTs exhibit hysteretic Id Vgs loops with subthreshold slopes below the Boltzmann limit. A control AlN barrier HEMT exhibits neither hysteretic, nor sub Boltzmann behavior. While these results introduce the first epitaxial high K and ferroelectric barrier technology to RF and mm wave electronics, they are also of interest as a new material platform for combining memory and logic functionalities in digital electronics.
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Submitted 27 February, 2023;
originally announced February 2023.
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Growth of $α-Ga_2O_3$ on $Al_2O_3$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy
Authors:
J. P. McCandless,
D. Rowe,
N. Pieczulewski,
V. Protasenko,
M. Alonso-Orts,
M. S. Williams,
M. Eickhoff,
H. G. Xing,
D. A. Muller,
D. Jena,
P. Vogt
Abstract:
We report the growth of $α-Ga_2O_3$ on $m$-plane $Al_2O_3$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth-rate-diagram for $α-Ga_2O_3$ (10-10), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of…
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We report the growth of $α-Ga_2O_3$ on $m$-plane $Al_2O_3$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth-rate-diagram for $α-Ga_2O_3$ (10-10), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of $α-Ga_2O_3$. Through the use of In-mediated catalysis, growth rates over $0.2\,μ\text{m}\,\text{hr}^{-1}$ and rocking curves with full width at half maxima of $Δω\approx 0.45^{\circ}$ are achieved. Faceting is observed along the $α-Ga_2O_3$ film surface and is explored through scanning transmission electron microscopy.
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Submitted 30 January, 2023;
originally announced January 2023.
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Fractional ordered Euler Riesz sequence space
Authors:
D. Jena,
S. Dutta
Abstract:
The main objective of this article is to introduce Euler-Riesz difference sequence spaces of fractional order $τ $ along with infinite matrices. Some topological properties of these spaces are considered here along with the Schauder basis, $α -,β-$ and $γ-$duals of the spaces.
Keywords: Euler-Riesz difference sequence space, difference operator $\left(Δ^τ \right)$, Schauder basis, infinite matri…
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The main objective of this article is to introduce Euler-Riesz difference sequence spaces of fractional order $τ $ along with infinite matrices. Some topological properties of these spaces are considered here along with the Schauder basis, $α -,β-$ and $γ-$duals of the spaces.
Keywords: Euler-Riesz difference sequence space, difference operator $\left(Δ^τ \right)$, Schauder basis, infinite matrices and $α -,β-$ and $γ-$duals .
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Submitted 14 January, 2023;
originally announced January 2023.
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Simultaneous measurement of muon neutrino quasielastic-like cross sections on CH, C, water, Fe, and Pb as a function of muon kinematics at MINERvA
Authors:
J. Kleykamp,
S. Akhter,
Z. Ahmad Dar,
V. Ansari,
M. V. Ascencio,
M. Sajjad Athar,
A. Bashyal,
A. Bercellie,
M. Betancourt,
A. Bodek,
J. L. Bonilla,
A. Bravar,
H. Budd,
G. Caceres,
T. Cai,
M. F. Carneiro,
G. A. Díaz,
H. da Motta,
S. A. Dytman,
J. Felix,
L. Fields,
A. Filkins,
R. Fine,
A. M. Gago,
H. Gallagher
, et al. (43 additional authors not shown)
Abstract:
This paper presents the first simultaneous measurement of the quasielastic-like neutrino-nucleus cross sections on C, water, Fe, Pb and scintillator (hydrocarbon or CH) as a function of longitudinal and transverse muon momentum. The ratio of cross sections per nucleon between Pb and CH is always above unity and has a characteristic shape as a function of transverse muon momentum that evolves slowl…
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This paper presents the first simultaneous measurement of the quasielastic-like neutrino-nucleus cross sections on C, water, Fe, Pb and scintillator (hydrocarbon or CH) as a function of longitudinal and transverse muon momentum. The ratio of cross sections per nucleon between Pb and CH is always above unity and has a characteristic shape as a function of transverse muon momentum that evolves slowly as a function of longitudinal muon momentum. The ratio is constant versus longitudinal momentum within uncertainties above a longitudinal momentum of 4.5GeV/c. The cross section ratios to CH for C, water, and Fe remain roughly constant with increasing longitudinal momentum, and the ratios between water or C to CH do not have any significant deviation from unity. Both the overall cross section level and the shape for Pb and Fe as a function of transverse muon momentum are not reproduced by current neutrino event generators. These measurements provide a direct test of nuclear effects in quasielastic-like interactions, which are major contributors to long-baseline neutrino oscillation data samples.
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Submitted 5 January, 2023;
originally announced January 2023.
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Silicon-doped $β$-Ga$_2$O$_3$ films grown at 1 $μ$m/h by suboxide molecular-beam epitaxy
Authors:
Kathy Azizie,
Felix V. E. Hensling,
Cameron A. Gorsak,
Yunjo Kim,
Daniel M. Dryden,
M. K. Indika Senevirathna,
Selena Coye,
Shun-Li Shang,
Jacob Steele,
Patrick Vogt,
Nicholas A. Parker,
Yorick A. Birkhölzer,
Jonathan P. McCandless,
Debdeep Jena,
Huili G. Xing,
Zi-Kui Liu,
Michael D. Williams,
Andrew J. Green,
Kelson Chabak,
Adam T. Neal,
Shin Mou,
Michael O. Thompson,
Hari P. Nair,
Darrell G. Schlom
Abstract:
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon doping concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiti…
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We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon doping concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of $β$-Ga$_2$O$_3$ by conventional MBE. As a result, a growth rate of ~1 $μ$m/h is readily achieved at a relatively low growth temperature (T$_{sub}$ = 525 $^\circ$C), resulting in films with high structural perfection and smooth surfaces (rms roughness of < 2 nm on ~1 $μ$m thick films). Silicon-containing oxide sources (SiO and SiO$_2$) producing an SiO suboxide molecular beam are used to dope the $β$-Ga$_2$O$_3$ layers. Temperature-dependent Hall effect measurements on a 1 $μ$m thick film with a mobile carrier concentration of 2.7x10$^{17}$ cm$^{-3}$ reveal a room-temperature mobility of 124 cm$^2$ V$^{-1}$ s$^{-1}$ that increases to 627 cm$^2$ V$^{-1}$ s$^{-1}$ at 76 K; the silicon dopants are found to exhibit an activation energy of 27 meV. We also demonstrate working MESFETs made from these silicon-doped $β$-Ga$_2$O$_3$ films grown by S-MBE at growth rates of ~1 $μ$m/h.
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Submitted 22 December, 2022;
originally announced December 2022.
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Highly-parallelized simulation of a pixelated LArTPC on a GPU
Authors:
DUNE Collaboration,
A. Abed Abud,
B. Abi,
R. Acciarri,
M. A. Acero,
M. R. Adames,
G. Adamov,
M. Adamowski,
D. Adams,
M. Adinolfi,
C. Adriano,
A. Aduszkiewicz,
J. Aguilar,
Z. Ahmad,
J. Ahmed,
B. Aimard,
F. Akbar,
K. Allison,
S. Alonso Monsalve,
M. Alrashed,
C. Alt,
A. Alton,
R. Alvarez,
P. Amedo,
J. Anderson
, et al. (1282 additional authors not shown)
Abstract:
The rapid development of general-purpose computing on graphics processing units (GPGPU) is allowing the implementation of highly-parallelized Monte Carlo simulation chains for particle physics experiments. This technique is particularly suitable for the simulation of a pixelated charge readout for time projection chambers, given the large number of channels that this technology employs. Here we pr…
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The rapid development of general-purpose computing on graphics processing units (GPGPU) is allowing the implementation of highly-parallelized Monte Carlo simulation chains for particle physics experiments. This technique is particularly suitable for the simulation of a pixelated charge readout for time projection chambers, given the large number of channels that this technology employs. Here we present the first implementation of a full microphysical simulator of a liquid argon time projection chamber (LArTPC) equipped with light readout and pixelated charge readout, developed for the DUNE Near Detector. The software is implemented with an end-to-end set of GPU-optimized algorithms. The algorithms have been written in Python and translated into CUDA kernels using Numba, a just-in-time compiler for a subset of Python and NumPy instructions. The GPU implementation achieves a speed up of four orders of magnitude compared with the equivalent CPU version. The simulation of the current induced on $10^3$ pixels takes around 1 ms on the GPU, compared with approximately 10 s on the CPU. The results of the simulation are compared against data from a pixel-readout LArTPC prototype.
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Submitted 28 February, 2023; v1 submitted 19 December, 2022;
originally announced December 2022.
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High-Statistics Measurement of Antineutrino Quasielastic-like scattering at $E_ν\sim$ 6~GeV on a Hydrocarbon Target
Authors:
A. Bashyal,
S. Akhter,
Z. Ahmad Dar,
F. Akbar,
V. Ansari,
M. V. Ascencio,
M. Sajjad Athar,
A. Bercellie,
M. Betancourt,
A. Bodek,
J. L. Bonilla,
A. Bravar,
H. Budd,
G. Caceres,
M. F. Carneiro,
G. A. Díaz,
J. Felix,
L. Fields,
A. Filkins,
R. Fine,
A. M. Gago,
H. Gallagher,
P. K. Gaur,
S. M. Gilligan,
R. Gran
, et al. (44 additional authors not shown)
Abstract:
We present measurements of the cross section for anti-neutrino charged-current quasielastic-like scattering on hydrocarbon using the medium energy (ME) NuMI wide-band neutrino beam peaking at $<E_ν>\sim 6$ GeV. The cross section measurements are presented as a function of the longitudinal momentum ($p_{||}$) and transverse momentum ($p_{T}$) of the final state muon. This work complements our previ…
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We present measurements of the cross section for anti-neutrino charged-current quasielastic-like scattering on hydrocarbon using the medium energy (ME) NuMI wide-band neutrino beam peaking at $<E_ν>\sim 6$ GeV. The cross section measurements are presented as a function of the longitudinal momentum ($p_{||}$) and transverse momentum ($p_{T}$) of the final state muon. This work complements our previously reported high statistics measurement in the neutrino channel and extends the previous anti-neutrino measurement made in the low energy (LE) beam at neutrino energy($<E_ν>$) $\sim$ 3.5 GeV to $p_{T}$ of 2.5 GeV/c.
Current theoretical models do not completely describe the data in this previously unexplored high $p_{T}$ region. The single differential cross section as a function of four momentum transfer ($Q^{2}_{QE}$) now extends to 4 GeV$^2$ with high statistics. The cross section as a function of $Q^{2}_{QE}$ shows that the tuned simulations developed by the MINERvA collaboration that agreed well with the low energy beam measurements do not agree as well with the medium energy beam measurements. Newer neutrino interaction models such as the GENIE 3 tunes are better able to simulate the high $Q^{2}_{QE}$.
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Submitted 25 June, 2023; v1 submitted 18 November, 2022;
originally announced November 2022.
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Identification and reconstruction of low-energy electrons in the ProtoDUNE-SP detector
Authors:
DUNE Collaboration,
A. Abed Abud,
B. Abi,
R. Acciarri,
M. A. Acero,
M. R. Adames,
G. Adamov,
M. Adamowski,
D. Adams,
M. Adinolfi,
C. Adriano,
A. Aduszkiewicz,
J. Aguilar,
Z. Ahmad,
J. Ahmed,
B. Aimard,
F. Akbar,
K. Allison,
S. Alonso Monsalve,
M. Alrashed,
C. Alt,
A. Alton,
R. Alvarez,
P. Amedo,
J. Anderson
, et al. (1235 additional authors not shown)
Abstract:
Measurements of electrons from $ν_e$ interactions are crucial for the Deep Underground Neutrino Experiment (DUNE) neutrino oscillation program, as well as searches for physics beyond the standard model, supernova neutrino detection, and solar neutrino measurements. This article describes the selection and reconstruction of low-energy (Michel) electrons in the ProtoDUNE-SP detector. ProtoDUNE-SP is…
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Measurements of electrons from $ν_e$ interactions are crucial for the Deep Underground Neutrino Experiment (DUNE) neutrino oscillation program, as well as searches for physics beyond the standard model, supernova neutrino detection, and solar neutrino measurements. This article describes the selection and reconstruction of low-energy (Michel) electrons in the ProtoDUNE-SP detector. ProtoDUNE-SP is one of the prototypes for the DUNE far detector, built and operated at CERN as a charged particle test beam experiment. A sample of low-energy electrons produced by the decay of cosmic muons is selected with a purity of 95%. This sample is used to calibrate the low-energy electron energy scale with two techniques. An electron energy calibration based on a cosmic ray muon sample uses calibration constants derived from measured and simulated cosmic ray muon events. Another calibration technique makes use of the theoretically well-understood Michel electron energy spectrum to convert reconstructed charge to electron energy. In addition, the effects of detector response to low-energy electron energy scale and its resolution including readout electronics threshold effects are quantified. Finally, the relation between the theoretical and reconstructed low-energy electron energy spectrum is derived and the energy resolution is characterized. The low-energy electron selection presented here accounts for about 75% of the total electron deposited energy. After the addition of lost energy using a Monte Carlo simulation, the energy resolution improves from about 40% to 25% at 50~MeV. These results are used to validate the expected capabilities of the DUNE far detector to reconstruct low-energy electrons.
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Submitted 31 May, 2023; v1 submitted 2 November, 2022;
originally announced November 2022.
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Neutrino-induced coherent $π^{+}$ production in C, CH, Fe and Pb at $\langle E_ν\rangle \sim 6$ GeV
Authors:
M. A. Ramírez,
S. Akhter,
Z. Ahmad Dar,
F. Akbar,
V. Ansari,
M. V. Ascencio,
M. Sajjad Athar,
A. Bashyal,
L. Bellantoni,
A. Bercellie,
M. Betancourt,
A. Bodek,
J. L. Bonilla,
A. Bravar,
H. Budd,
G. Caceres,
T. Cai,
G. A. Díaz,
H. da Motta,
S. A. Dytman,
J. Felix,
L. Fields,
A. Filkins,
R. Fine,
H. Gallagher
, et al. (41 additional authors not shown)
Abstract:
MINERvA has measured the $ν_μ$-induced coherent $π^{+}$ cross section simultaneously in hydrocarbon (CH), graphite (C), iron (Fe) and lead (Pb) targets using neutrinos from 2 to 20 GeV. The measurements exceed the predictions of the Rein-Sehgal and Berger-Sehgal PCAC based models at multi-GeV $ν_μ$ energies and at produced $π^{+}$ energies and angles, $E_π>1$ GeV and $θ_π<10^{\circ}$. Measurements…
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MINERvA has measured the $ν_μ$-induced coherent $π^{+}$ cross section simultaneously in hydrocarbon (CH), graphite (C), iron (Fe) and lead (Pb) targets using neutrinos from 2 to 20 GeV. The measurements exceed the predictions of the Rein-Sehgal and Berger-Sehgal PCAC based models at multi-GeV $ν_μ$ energies and at produced $π^{+}$ energies and angles, $E_π>1$ GeV and $θ_π<10^{\circ}$. Measurements of the cross-section ratios of Fe and Pb relative to CH reveal the effective $A$-scaling to increase from an approximate $A^{1/3}$ scaling at few GeV to an $A^{2/3}$ scaling for $E_ν>10$ GeV.
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Submitted 26 June, 2023; v1 submitted 3 October, 2022;
originally announced October 2022.
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Simultaneous measurement of muon neutrino $ν_μ$ charged-current single $π^+$ production in CH, C, H$_2$O, Fe, and Pb targets in MINERvA
Authors:
A. Bercellie,
K. A. Kroma-Wiley,
S. Akhter,
Z. Ahmad Dar,
F. Akbar,
V. Ansari,
M. V. Ascencio,
M. Sajjad Athar,
L. Bellantoni,
M. Betancourt,
A. Bodek,
J. L. Bonilla,
A. Bravar,
H. Budd,
G. Caceres,
T. Cai,
G. A. Díaz,
H. da Motta,
S. A. Dytman,
J. Felix,
L. Fields,
A. Filkins,
R. Fine,
A. M. Gago,
H. Gallagher
, et al. (47 additional authors not shown)
Abstract:
Neutrino-induced charged-current single $π^+$ production in the $Δ(1232)$ resonance region is of considerable interest to accelerator-based neutrino oscillation experiments. In this work, high statistics differential cross sections are reported for the semi-exclusive reaction $ν_μA \to μ^- π^+ +$ nucleon(s) on scintillator, carbon, water, iron, and lead targets recorded by MINERvA using a wide-ban…
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Neutrino-induced charged-current single $π^+$ production in the $Δ(1232)$ resonance region is of considerable interest to accelerator-based neutrino oscillation experiments. In this work, high statistics differential cross sections are reported for the semi-exclusive reaction $ν_μA \to μ^- π^+ +$ nucleon(s) on scintillator, carbon, water, iron, and lead targets recorded by MINERvA using a wide-band $ν_μ$ beam with $\left< E_ν\right> \approx 6$~GeV. Suppression of the cross section at low $Q^2$ and enhancement of low $T_π$ are observed in both light and heavy nuclear targets compared to phenomenological models used in current neutrino interaction generators. The cross-section ratios for iron and lead compared to CH across the kinematic variables probed are 0.8 and 0.5 respectively, a scaling which is also not predicted by current generators.
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Submitted 12 July, 2023; v1 submitted 16 September, 2022;
originally announced September 2022.
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Improved constraint on the MINERvA medium energy neutrino flux using $\barνe^{-} \!\rightarrow \barνe^{-}$ data
Authors:
L. Zazueta,
S. Akhter,
Z. Ahmad Dar,
F. Akbar,
V. Ansari,
M. V. Ascencio,
M. Sajjad Athar,
A. Bashyal,
A. Bercellie,
M. Betancourt,
A. Bodek,
J. L. Bonilla,
A. Bravar,
H. Budd,
T. Cai,
G. A. Díaz,
H. da Motta,
J. Felix,
L. Fields,
A. Filkins,
R. Fine,
A. M. Gago,
H. Gallagher,
A. Ghosh,
S. M. Gilligan
, et al. (36 additional authors not shown)
Abstract:
Processes with precisely known cross sections, like neutrino electron elastic scattering ($νe^{-} \!\rightarrow νe^{-}$) and inverse muon decay ($ν_μe^{-} \!\rightarrow μ^{-} ν_e$) have been used by MINERvA to constrain the uncertainty on the NuMI neutrino beam flux. This work presents a new measurement of neutrino elastic scattering with electrons using the medium energy \numubar enhanced NuMI be…
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Processes with precisely known cross sections, like neutrino electron elastic scattering ($νe^{-} \!\rightarrow νe^{-}$) and inverse muon decay ($ν_μe^{-} \!\rightarrow μ^{-} ν_e$) have been used by MINERvA to constrain the uncertainty on the NuMI neutrino beam flux. This work presents a new measurement of neutrino elastic scattering with electrons using the medium energy \numubar enhanced NuMI beam. A sample of 578 events after background subtraction is used in combination with the previous measurement on the \numu beam and the inverse muon decay measurement to reduce the uncertainty on the \numu flux in the \numu-enhanced beam from 7.6\% to 3.3\% and the \numubar flux in the \numubar-enhanced beam from 7.8\% to 4.7\%.
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Submitted 12 September, 2022;
originally announced September 2022.
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HZO-based FerroNEMS MAC for In-Memory Computing
Authors:
Shubham Jadhav,
Ved Gund,
Benyamin Davaji,
Debdeep Jena,
Huili,
Xing,
Amit Lal
Abstract:
This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computing. The reported device consists of a 250 $μ$m $\times$ 30 $μ$m unimorph cantilever with 20 nm thick ferroelectric HZO on 1 $μ$m $SiO_2$.Partial ferroelectric switching in HZO achieves analog programmable control of the…
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This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computing. The reported device consists of a 250 $μ$m $\times$ 30 $μ$m unimorph cantilever with 20 nm thick ferroelectric HZO on 1 $μ$m $SiO_2$.Partial ferroelectric switching in HZO achieves analog programmable control of the piezoelectric coefficient ($d_{31}$) which serves as the computational weight for multiply-accumulate (MAC) operations. The displacement of the piezoelectric unimorph was recorded by actuating the device with different input voltages $V_{in}$. The resulting displacement was measured as a function of the ferroelectric programming/poling voltage $V_p$. The slopes of central beam displacement ($δ_{max}$) vs $V_{in}$ were measured to be between 182.9nm/V (for -8 $V_p$) and -90.5nm/V (for 8 $V_p$), demonstrating that $V_p$ can be used to change the direction of motion of the beam. The resultant ($δ_{max}$) from AC actuation is in the range of -18 to 36 nm and is a scaled product of the input voltage and programmed $d_{31}$ (governed by the $V_p$). The multiplication function serves as the fundamental unit for MAC operations with the ferroelectric NEMS unimorph. The displacement from many such beams can be added by summing the capacitance changes, providing a pathway to implement a multi-input and multi-weight neuron. A scaling and fabrication analysis suggests that this device can be CMOS compatible, achieving high in-memory computational throughput.
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Submitted 12 August, 2022;
originally announced August 2022.