Showing 1–37 of 37 results for author: Janzén, E

Electrical Spectroscopy of Polaritonic Nanoresonators

Authors: Sebastián Castilla, Hitesh Agarwal, Ioannis Vangelidis, Yuliy Bludov, David Alcaraz Iranzo, Adrià Grabulosa, Matteo Ceccanti, Mikhail I. Vasilevskiy, Roshan Krishna Kumar, Eli Janzen, James H. Edgar, Kenji Watanabe, Takashi Taniguchi, Nuno M. R. Peres, Elefterios Lidorikis, Frank H. L. Koppens

Abstract: One of the most captivating properties of polaritons is their capacity to confine light at the nanoscale. This confinement is even more extreme in two-dimensional (2D) materials. 2D polaritons have been investigated by optical measurements using an external photodetector. However, their effective spectrally resolved electrical detection via far-field excitation remains unexplored. This fact hinder… ▽ More One of the most captivating properties of polaritons is their capacity to confine light at the nanoscale. This confinement is even more extreme in two-dimensional (2D) materials. 2D polaritons have been investigated by optical measurements using an external photodetector. However, their effective spectrally resolved electrical detection via far-field excitation remains unexplored. This fact hinders their potential exploitation in crucial applications such as sensing molecules and gases, hyperspectral imaging and optical spectrometry, banking on their potential for integration with silicon technologies. Herein, we present the first electrical spectroscopy of polaritonic nanoresonators based on a high-quality 2D-material heterostructure, which serves at the same time as the photodetector and the polaritonic platform. We employ metallic nanorods to create hybrid nanoresonators within the hybrid plasmon-phonon polaritonic medium in the mid and long-wave infrared ranges. Subsequently, we electrically detect these resonators by near-field coupling to a graphene pn-junction. The nanoresonators simultaneously present a record of lateral confinement and high-quality factors of up to 200, exhibiting prominent peaks in the photocurrent spectrum, particularly at the underexplored lower reststrahlen band of hBN. We exploit the geometrical and gate tunability of these nanoresonators to investigate their impact on the photocurrent spectrum and the polaritonic's waveguided modes. This work opens a venue for studying this highly tunable and complex hybrid system, as well as for using it in compact platforms for sensing and photodetection applications. △ Less

Submitted 27 September, 2024; originally announced September 2024.

Comments: 34 pages, 4 main figures and 22 supplementary figures

Journal ref: Nature Communications (2024)

Determining van der Waals materials' optical and polaritonic properties using cryogenic FTIR micro-spectroscopy

Authors: Siddharth Nandanwar, Aditya Desai, S. Maryam Vaghefi Esfidani, Tristan McMillan, Eli Janzen, James H. Edgar, Thomas G. Folland

Abstract: Van-der-Waals materials have been shown to support numerous exotic polaritonic phenomena originating from their layered structures and associated vibrational and electronic properties. This includes emergent polaritonic phenomena, including hyperbolicity and exciton-polariton formation. However, many van-der-Waals materials' unique properties are most prominent at cryogenic temperatures. This pres… ▽ More Van-der-Waals materials have been shown to support numerous exotic polaritonic phenomena originating from their layered structures and associated vibrational and electronic properties. This includes emergent polaritonic phenomena, including hyperbolicity and exciton-polariton formation. However, many van-der-Waals materials' unique properties are most prominent at cryogenic temperatures. This presents a particular challenge for polaritonics research, as reliable optical constant data is required for understanding light-matter coupling. For infrared polaritonics (3-100um), the small size of exfoliated flakes makes conventional ellipsometry impossible. This paper presents a cryogenic Fourier transform infrared microscope design constructed entirely from off-the-shelf components and fitting procedures for determining optical constants. We use this microscope to present the first temperature-dependent characterization of the optical properties of hexagonal boron nitride grown with isotopically pure boron. We show that Fabry Perot-type resonances close to the transverse optical phonon show the key temperature-dependent tuning of several parameters. Our full analysis of the infrared dielectric function shows small but significant tuning of the optical constants, which is highly consistent with Raman data from the literature. We then use this dielectric data to perform and analyze the polariton propagation properties, which agree extremely well with published cryogenic scattering-type nearfield microscopy results. In addition to the insights gained into hyperbolic polaritons in hBN, our paper represents a transferable framework for characterizing exfoliated infrared polaritonic materials and other infrared devices. This could accelerate discoveries in other material systems, especially those that are spatially inhomogeneous or cannot be prepared as large single crystals. △ Less

Submitted 21 August, 2024; originally announced August 2024.

Isotope substitution and polytype control for point defects identification: the case of the ultraviolet color center in hexagonal boron nitride

Authors: J. Plo, A. Pershin, S. Li, T. Poirier, E. Janzen, H. Schutte, M. Tian, M. Wynn, S. Bernard, A. Rousseau, A. Ibanez, P. Valvin, W. Desrat, T. Michel, V. Jacques, B. Gil, A. Kaminska, N. Wan, J. H. Edgar, A. Gali, G. Cassabois

Abstract: Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and optoelectronic devices. The control of single color centers is at the basis of advanced applications for quantum technologies. Unintentional defects can also be detrimental to the crystalline structure and hinder the deve… ▽ More Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and optoelectronic devices. The control of single color centers is at the basis of advanced applications for quantum technologies. Unintentional defects can also be detrimental to the crystalline structure and hinder the development of novel materials. Whatever the research perspective, the identification of defects is a key but complicated, and often long-standing issue. Here, we present a general methodology to identify point defects by combining isotope substitution and polytype control, with a systematic comparison between experiments and first-principles calculations. We apply this methodology to hexagonal boron nitride (hBN) and its ubiquitous color center emitting in the ultraviolet spectral range. From isotopic purification of the host hBN matrix, a local vibrational mode of the defect is uncovered, and isotope-selective carbon doping proves that this mode belongs to a carbon-based center. Then, by varying the stacking sequence of the host hBN matrix, we unveil different optical responses to hydrostatic pressure for the non-equivalent configurations of this ultraviolet color center. We conclude that this defect is a carbon dimer in the honeycomb lattice of hBN. Our results show that tuning the stacking sequence in different polytypes of a given crystal provides unique fingerprints contributing to the identification of defects in 2D materials. △ Less

Submitted 31 May, 2024; originally announced May 2024.

Exciton self-trapping in twisted hexagonal boron nitride homostructures

Authors: Sébastien Roux, Christophe Arnold, Etienne Carré, Alexandre Plaud, Lei Ren, Frédéric Fossard, Nicolas Horezan, Eli Janzen, James H. Edgar, Camille Maestre, Bérangère Toury, Catherine Journet, Vincent Garnier, Philippe Steyer, Takashi Taniguchi, Kenji Watanabe, Cédric Robert, Xavier Marie, Annick Loiseau, Julien Barjon

Abstract: One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence and time-resolved cathodoluminescence experiments to study how excitons interact with the inter… ▽ More One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence and time-resolved cathodoluminescence experiments to study how excitons interact with the interface between two twisted hexagonal boron nitride (hBN) crystals with various angles. An efficient capture of free excitons by the interface is demonstrated, which leads to a population of long-lived and interface-localized (2D) excitons. Temperature dependent experiments indicate that for high twist angles, these excitons localized at the interface further undergo a selftrapping. It consists in a distortion of the lattice around the exciton on which the exciton traps itself. Our results suggest that this exciton-interface interaction causes the broad 4-eV optical emission of highly twisted hBN-hBN structures. Exciton self-trapping is finally discussed as a common feature of sp2 hybridized boron nitride polytypes and nanostructures due to the ionic nature of the B-N bond and the small size of their excitons. △ Less

Submitted 27 February, 2025; v1 submitted 15 May, 2024; originally announced May 2024.

Comments: 17 pages, 15 figures, accepted for publication in Physical Review X

Temperature dependent spin-phonon coupling of boron-vacancy centers in hexagonal boron nitride

Authors: Zhongyuan Liu, Ruotian Gong, Benchen Huang, Yu Jin, Xinyi Du, Guanghui He, Eli Janzen, Li Yang, Erik Henriksen, James Edgar, Giulia Galli, Chong Zu

Abstract: The negatively charged boron-vacancy center ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN) has recently emerged as a highly promising quantum sensor. Compared to the nitrogen-vacancy (NV) center in diamond, the change with temperature of the spin transition energy of $\mathrm{V}_{\mathrm{B}}^-$ is more than an order of magnitude larger, making it a potential nanoscale thermometer w… ▽ More The negatively charged boron-vacancy center ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN) has recently emerged as a highly promising quantum sensor. Compared to the nitrogen-vacancy (NV) center in diamond, the change with temperature of the spin transition energy of $\mathrm{V}_{\mathrm{B}}^-$ is more than an order of magnitude larger, making it a potential nanoscale thermometer with superior sensitivity. However, the underlying mechanism of the observed large temperature dependence remains an open question. In this work, using isotopically purified $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$, we systematically characterize the zero-field splitting, hyperfine interaction, and spin relaxation time of $\mathrm{V}_{\mathrm{B}}^-$ from 10 to 350$~$K. We carry out first-principle calculations of the $\mathrm{V}_{\mathrm{B}}^-$ spin-phonon interaction and show that a second-order effect from finite-temperature phonon excitations is responsible for the observed changes in experiments. By fitting our experimental results to a physically motivated model, we extract the dominant phonon mode which agrees well with our simulations. Finally, we investigate the dynamic nuclear spin polarization process at cryogenic temperatures. Our results provide key insights in $\mathrm{V}_{\mathrm{B}}^-$ centers and their utilization as nanoscale thermometers and phonon sensors. △ Less

Submitted 10 December, 2024; v1 submitted 23 April, 2024; originally announced April 2024.

Comments: [Version 2] 7 pages, 4 figures and 1 table in main. 11 pages and 8 figures in supplemental material. Updated for revision, revised manuscript and figures, added more references and addtional supplementary figures. [Original Version] 7 pages, 4 figures and 1 table in main. 9 pages and 5 figures in supplemental material

Journal ref: Physical Review B 111, 024108 (2025)

Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride

Authors: T. Clua-Provost, Z. Mu, A. Durand, C. Schrader, J. Happacher, J. Bocquel, P. Maletinsky, J. Fraunié, X. Marie, C. Robert, G. Seine, E. Janzen, J. H. Edgar, B. Gil, G. Cassabois, V. Jacques

Abstract: The negatively-charged boron vacancy (V$_\text{B}^-$) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) quantum sensing units. Such developments require a precise understanding of the spin-dependent optical response of V$_\text{B}^-$ centers, which still remains poorly documented despite its key role for sensing application… ▽ More The negatively-charged boron vacancy (V$_\text{B}^-$) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) quantum sensing units. Such developments require a precise understanding of the spin-dependent optical response of V$_\text{B}^-$ centers, which still remains poorly documented despite its key role for sensing applications. Here we investigate the spin-dependent photodynamics of V$_\text{B}^-$ centers in hBN by a series of time-resolved photoluminescence (PL) measurements. We first introduce a robust all-optical method to infer the spin-dependent lifetime of the excited states and the electron spin polarization of V$_\text{B}^-$ centers under optical pumping. Using these results, we then analyze PL time traces recorded at different optical excitation powers with a seven-level model of the V$_\text{B}^-$ center and we extract all the rates involved in the spin-dependent optical cycles, both under ambient conditions and at liquid helium temperature. These findings are finally used to study the impact of a vector magnetic field on the optical response. More precisely, we analyze PL quenching effects resulting from electron spin mixing induced by the magnetic field component perpendicular to the V$_\text{B}^-$ quantization axis. All experimental results are well reproduced by the seven-level model, illustrating its robustness to describe the spin-dependent photodymanics of V$_\text{B}^-$ centers. This work provides important insights into the properties of V$_\text{B}^-$ centers in hBN, which are valuable for future developments of 2D quantum sensing units. △ Less

Submitted 22 April, 2024; originally announced April 2024.

Comments: 11 pages, 9 figures

Electroluminescence and Energy Transfer Mediated by Hyperbolic Polaritons

Authors: L. Abou-Hamdan, A. Schmitt, R. Bretel, S. Rossetti, M. Tharrault, D. Mele, A. Pierret, M. Rosticher, T. Taniguchi, K. Watanabe, C. Maestre, C. Journet, B. Toury, V. Garnier, P. Steyer, J. H. Edgar, E. Janzen, J-M. Berroir, G. Fève, G. Ménard, B. Plaçais, C. Voisin, J-P. Hugonin, E. Bailly, B. Vest , et al. (4 additional authors not shown)

Abstract: Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devices (e.g., light-emitting diodes). In principle, electroluminescence can lead to mid-infrared (mid-IR) emission of confined light-matter excitations ca… ▽ More Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devices (e.g., light-emitting diodes). In principle, electroluminescence can lead to mid-infrared (mid-IR) emission of confined light-matter excitations called phonon-polaritons, resulting from the coupling of photons with crystal lattice vibrations (optical phonons). In particular, phonon-polaritons arising in the van der Waals crystal hexagonal boron nitride (hBN) exhibit hyperbolic dispersion, which enhances light-matter coupling. For this reason, electroluminescence of hyperbolic phonon-polaritons (HPhPs) has been proposed as an explanation for the peculiar radiative energy transfer within hBN-encapsulated graphene transistors. However, since HPhPs are confined, they are inaccessible in the far-field, so that any hint of electroluminescence is only based on indirect electronic signatures and needs to be confirmed by direct observation. Here, we demonstrate far-field mid-IR (λ = 6.5 μm) electroluminescence of HPhPs excited by strongly biased high-mobility graphene within a van der Waals heterostructure, and we quantify the associated radiative energy transfer through the material. The presence of HPhPs is revealed via far-field mid-IR spectroscopy due to their elastic scattering at discontinuities in the heterostructure. The associated radiative flux is quantified by mid-IR pyrometry of the substrate receiving the energy. This radiative energy transfer is shown to be reduced in hBN with nanoscale inhomogeneities, demonstrating the central role of the electromagnetic environment in this process. △ Less

Submitted 2 December, 2024; v1 submitted 12 October, 2023; originally announced October 2023.

Comments: 32 pages including Extended Data and Supplementary Material (Main text: 7 pages, 4 figures)

Journal ref: Nature 639, 909-914 (2025)

Deep Subwavelength Topological Edge State in a Hyperbolic Medium

Authors: Lorenzo Orsini, Hanan Herzig Sheinfux, Yandong Li, Seojoo Lee, Gian Marcello Andolina, Orazio Scarlatella, Matteo Ceccanti, Karuppasamy Soundarapandian, Eli Janzen, James H. Edgar, Gennady Shvets, Frank H. L. Koppens

Abstract: Topological nanophotonics presents the potential for cutting-edge photonic systems, with a core aim revolving around the emergence of topological edge states. These states are primed to propagate robustly while embracing deep subwavelength confinement that defies diffraction limits. Such attributes make them particularly appealing for nanoscale applications, where achieving these elusive states ha… ▽ More Topological nanophotonics presents the potential for cutting-edge photonic systems, with a core aim revolving around the emergence of topological edge states. These states are primed to propagate robustly while embracing deep subwavelength confinement that defies diffraction limits. Such attributes make them particularly appealing for nanoscale applications, where achieving these elusive states has remained challenging. We unveil the first experimental proof of deep subwavelength topological edge states by implementing periodic modulation of hyperbolic phonon polaritons within a Van der Waals heterostructure. This finding represents a significant milestone in the field of nanophotonics, and it can be directly extended to and hybridized with other Van der Waals materials in various applications. The extensive scope for material substitution facilitates broadened operational frequency ranges, streamlined integration of diverse polaritonic materials, and compatibility with electronic and excitonic systems. △ Less

Submitted 4 October, 2023; originally announced October 2023.

Bound states in the continuum and long-range coupling of polaritons in hexagonal boron nitride nanoresonators

Authors: Harsh Gupta, Giacomo Venturi, Tatiana Contino, Eli Janzen, James H. Edgar, Francesco de Angelis, Andrea Toma, Antonio Ambrosio, Michele Tamagnone

Abstract: Bound states in the continuum (BICs) garnered significant for their potential to create new types of nanophotonic devices. Most prior demonstrations were based on arrays of dielectric resonators, which cannot be miniaturized beyond the diffraction limit, reducing the applicability of BICs for advanced functions. Here, we demonstrate BICs and quasi-BICs based on high-quality factor phonon-polariton… ▽ More Bound states in the continuum (BICs) garnered significant for their potential to create new types of nanophotonic devices. Most prior demonstrations were based on arrays of dielectric resonators, which cannot be miniaturized beyond the diffraction limit, reducing the applicability of BICs for advanced functions. Here, we demonstrate BICs and quasi-BICs based on high-quality factor phonon-polariton resonances in isotopically pure h11BN and how these states can be supported by periodic arrays of nanoresonators with sizes much smaller than the wavelength. We theoretically illustrate how BICs emerge from the band structure of the arrays and verify both numerically and experimentally the presence of these states and enhanced quality factor. Furthermore, we identify and characterize simultaneously quasi-BICs and bright states. Our method can be generalized to create a large number of optical states and to tune their coupling with the environment, paving the way to miniaturized nanophotonic devices with more advanced functions. △ Less

Submitted 21 September, 2023; originally announced September 2023.

Comments: 13 pages, 5 figures, early version

Surface recombination and out of plane diffusivity of free excitons in hexagonal boron nitride

Authors: Sébastien Roux, Christophe Arnold, Etienne Carré, Eli Janzen, James H. Edgard, Camille Maestre, Bérangère Toury, Catherine Journet, Vincent Garnier, Philippe Steyer, Takashi Taniguchi, Kenji Watanabe, Annick Loiseau, Julien Barjon

Abstract: We present a novel experimental protocol using Cathodoluminescence measurements as a function of the electron incident energy to study both exciton diffusion in a directional way and surface exciton recombination. Our approach overcomes the challenges of anisotropic diffusion and the limited applicability of existing methods to the bulk counterparts of 2D materials. The protocol is then applied at… ▽ More We present a novel experimental protocol using Cathodoluminescence measurements as a function of the electron incident energy to study both exciton diffusion in a directional way and surface exciton recombination. Our approach overcomes the challenges of anisotropic diffusion and the limited applicability of existing methods to the bulk counterparts of 2D materials. The protocol is then applied at room and at cryogenic temperatures to four bulk hexagonal boron nitride crystals grown by different synthesis routes. The exciton diffusivity depends on the sample quality but not on the temperature, indicating it is limited by defect scattering even in the best quality crystals. The lower limit for the diffusivity by phonon scattering is 0.2 cm$^{2}$.s$^{-1}$. Diffusion lengths were as much as 570 nm. Finally, the surface recombination velocity exceeds 10$^{5}$ cm$^{2}$.s$^{-1}$, at a level similar to silicon or diamond. This result reveals that surface recombination could strongly limit light-emitting devices based on 2D materials. △ Less

Submitted 11 August, 2023; v1 submitted 10 August, 2023; originally announced August 2023.

Comments: Main text : 8 pages, 5 figures. Annexes : 3 pages, 3 figures. Submitted to Physical Review B

Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride

Authors: T. Clua-Provost, A. Durand, Z. Mu, T. Rastoin, J. Fraunié, E. Janzen, H. Schutte, J. H. Edgar, G. Seine, A. Claverie, X. Marie, C. Robert, B. Gil, G. Cassabois, V. Jacques

Abstract: We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields a simplified and well-resolved hyperfine structure of V$_\text{B}^-$ centers, while purification with $^{10}$B leads to narrower ESR linewidths. These results… ▽ More We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields a simplified and well-resolved hyperfine structure of V$_\text{B}^-$ centers, while purification with $^{10}$B leads to narrower ESR linewidths. These results establish isotopically-purified h$^{10}$B$^{15}$N crystals as the optimal host material for future use of V$_\text{B}^-$ spin defects in quantum technologies. Capitalizing on these findings, we then demonstrate optically-induced polarization of $^{15}$N nuclei in h$^{10}$B$^{15}$N, whose mechanism relies on electron-nuclear spin mixing in the V$_\text{B}^-$ ground state. This work opens up new prospects for future developments of spin-based quantum sensors and simulators on a two-dimensional material platform. △ Less

Submitted 13 July, 2023; originally announced July 2023.

Comments: 6 pages, 3 figure

Journal ref: Phys. Rev. Lett. 131, 126901 (2023)

Isotope engineering for spin defects in van der Waals materials

Authors: Ruotian Gong, Xinyi Du, Eli Janzen, Vincent Liu, Zhongyuan Liu, Guanghui He, Bingtian Ye, Tongcang Li, Norman Y. Yao, James H. Edgar, Erik A. Henriksen, Chong Zu

Abstract: Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal b… ▽ More Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN), we grow isotopically purified $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ crystals. Compared to $\mathrm{V}_{\mathrm{B}}^-$ in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded $\mathrm{V}_{\mathrm{B}}^-$ spin transitions as well as extended coherence time $T_2$ and relaxation time $T_1$. For quantum sensing, $\mathrm{V}_{\mathrm{B}}^-$ centers in our $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ samples exhibit a factor of $4$ ($2$) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the $\mathrm{V}_{\mathrm{B}}^-$ hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor ${}^{15}\mathrm{N}$ nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials. △ Less

Submitted 3 January, 2024; v1 submitted 12 July, 2023; originally announced July 2023.

Comments: 8+5+12 pages, 4+5+8 figures

Journal ref: Nature Communications 15, 104 (2024)

Boron and nitrogen isotope effects on hexagonal boron nitride properties

Authors: E. Janzen, H. Schutte, J. Plo, A. Rousseau, T. Michel, W. Desrat, P. Valvin, V. Jacques, G. Cassabois, B. Gil, J. H. Edgar

Abstract: The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising two-dimensional material for electronic, optoelectronic, nanophotonic, and quantum devices. Here we report on the changes in hBN's properties induced by isotopic purification in both boron and nitrogen. Previous studies on isotopically pure hBN have focused on purifyin… ▽ More The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising two-dimensional material for electronic, optoelectronic, nanophotonic, and quantum devices. Here we report on the changes in hBN's properties induced by isotopic purification in both boron and nitrogen. Previous studies on isotopically pure hBN have focused on purifying the boron isotope concentration in hBN from its natural concentration (approximately 20 at$\%$ $^{10}$B, 80 at$\%$ $^{11}$B) while using naturally abundant nitrogen (99.6 at$\%$ $^{14}$N, 0.4 at$\%$ $^{15}$N), i.e. almost pure $^{14}$N. In this study, we extend the class of isotopically-purified hBN crystals to $^{15}$N. Crystals in the four configurations, namely h$^{10}$B$^{14}$N, h$^{11}$B$^{14}$N, h$^{10}$B$^{15}$N, and h$^{11}$B$^{15}$N, were grown by the metal flux method using boron and nitrogen single isotope ($>99\%$) enriched sources, with nickel plus chromium as the solvent. In-depth Raman and photoluminescence spectroscopies demonstrate the high quality of the monoisotopic hBN crystals with vibrational and optical properties of the $^{15}$N-purified crystals at the state of the art of currently available $^{14}$N-purified hBN. The growth of high-quality h$^{10}$B$^{14}$N, h$^{11}$B$^{14}$N, h$^{10}$B$^{15}$N, and h$^{11}$B$^{15}$N opens exciting perspectives for thermal conductivity control in heat management, as well as for advanced functionalities in quantum technologies. △ Less

Submitted 23 June, 2023; originally announced June 2023.

Comments: 13 pages, 7 figures

Coherently amplified ultrafast imaging using a free-electron interferometer

Authors: Tomer Bucher, Harel Nahari, Hanan Herzig Sheinfux, Ron Ruimy, Arthur Niedermayr, Raphael Dahan, Qinghui Yan, Yuval Adiv, Michael Yannai, Jialin Chen, Yaniv Kurman, Sang Tae Park, Daniel J. Masiel, Eli Janzen, James H. Edgar, Fabrizio Carbone, Guy Bartal, Shai Tsesses, Frank H. L. Koppens, Giovanni Maria Vanacore, Ido Kaminer

Abstract: Accessing the low-energy non-equilibrium dynamics of materials and their polaritons with simultaneous high spatial and temporal resolution has been a bold frontier of electron microscopy in recent years. One of the main challenges lies in the ability to retrieve extremely weak signals while simultaneously disentangling amplitude and phase information. Here, we present Free-Electron Ramsey Imaging… ▽ More Accessing the low-energy non-equilibrium dynamics of materials and their polaritons with simultaneous high spatial and temporal resolution has been a bold frontier of electron microscopy in recent years. One of the main challenges lies in the ability to retrieve extremely weak signals while simultaneously disentangling amplitude and phase information. Here, we present Free-Electron Ramsey Imaging (FERI), a microscopy approach based on light-induced electron modulation that enables coherent amplification of optical near-fields in electron imaging. We provide simultaneous time-, space-, and phase-resolved measurements of a micro-drum made from a hexagonal boron nitride membrane visualizing the sub-cycle dynamics of 2D polariton wavepackets therein. The phase-resolved measurements reveals vortex-anti-vortex singularities on the polariton wavefronts, together with an intriguing phenomenon of a traveling wave mimicking the amplitude profile of a standing wave. Our experiments show a 20-fold coherent amplification of the near-field signal compared to conventional electron near-field imaging, resolving peak field intensities in the order of ~W/cm2, corresponding to field amplitudes of a few kV/m. As a result, our work paves the way for spatio-temporal electron microscopy of biological specimens and quantum materials, exciting yet delicate samples that are currently difficult to investigate. △ Less

Submitted 16 July, 2024; v1 submitted 8 May, 2023; originally announced May 2023.

Unexpected catalytic activity of nanorippled graphene

Authors: P. Z. Sun, W. Q. Xiong, A. Bera, I. Timokhin, Z. F. Wu, A. Mishchenko, M. C. Sellers, B. L. Liu, H. M. Cheng, E. Janzen, J. H. Edgar, I. V. Grigorieva, S. J. Yuan, A. K. Geim

Abstract: Graphite is one of the most chemically inert materials. Its elementary constituent, monolayer graphene, is generally expected to inherit most of the parent material's properties including chemical inertness. Here we show that, unlike graphite, defect-free monolayer graphene exhibits a strong activity with respect to splitting molecular hydrogen, which is comparable to that of metallic and other kn… ▽ More Graphite is one of the most chemically inert materials. Its elementary constituent, monolayer graphene, is generally expected to inherit most of the parent material's properties including chemical inertness. Here we show that, unlike graphite, defect-free monolayer graphene exhibits a strong activity with respect to splitting molecular hydrogen, which is comparable to that of metallic and other known catalysts for this reaction. We attribute the unexpected catalytic activity to surface corrugations (nanoscale ripples), a conclusion supported by theory. Nanoripples are likely to play a role in other chemical reactions involving graphene and, because nanorippling is inherent to atomically thin crystals, can be important for two dimensional materials in general. △ Less

Submitted 14 March, 2023; originally announced March 2023.

Journal ref: Proc. Natl Acad. Sci. 120, e2300481120 (2023)

Dual-band coupling between nanoscale polaritons and vibrational and electronic excitations in molecules

Authors: A. Bylinkin, F. Calavalle, M. Barra-Burillo, R. V. Kirtaev, E. Nikulina, E. B. Modin, E. Janzen, J. H. Edgar, F. Casanova, L. E. Hueso, V. S. Volkov, P. Vavassori, I. Aharonovich, P. Alonso-Gonzalez, R. Hillenbrand, A. Y. Nikitin

Abstract: Strong coupling (SC) between light and matter excitations such as excitons and molecular vibrations bear intriguing potential for controlling chemical reactivity, conductivity or photoluminescence. So far, SC has been typically achieved either between mid-infrared (mid-IR) light and molecular vibrations or between visible light and excitons. Achieving SC simultaneously in both frequency bands may… ▽ More Strong coupling (SC) between light and matter excitations such as excitons and molecular vibrations bear intriguing potential for controlling chemical reactivity, conductivity or photoluminescence. So far, SC has been typically achieved either between mid-infrared (mid-IR) light and molecular vibrations or between visible light and excitons. Achieving SC simultaneously in both frequency bands may open unexplored pathways for manipulating material properties. Here, we introduce a polaritonic nanoresonator (formed by h-BN layers placed on Al ribbons) hosting surface plasmon polaritons (SPPs) at visible frequencies and phonon polaritons (PhPs) at mid-IR frequencies, which simultaneously couple to excitons and atomic vibration in an adjacent molecular layer (CoPc). Employing near-field optical nanoscopy, we first demonstrate the co-localization of strongly confined near-fields at both visible and mid-IR frequencies. After covering the nanoresonator structure with a layer of CoPc molecules, we observe clear mode splittings in both frequency ranges by far-field transmission spectroscopy, unambiguously revealing simultaneous SPP-exciton and PhP-vibron coupling. Dual-band SC may be exploited for manipulating the coupling between excitons and molecular vibrations in future optoelectronics, nanophotonics, and quantum information applications. △ Less

Submitted 28 February, 2023; originally announced February 2023.

Control of the phonon band gap with isotopes in hexagonal boron nitride

Authors: Paul Zeiger, Jordan Hachtel, Dominik Legut, Eli Janzen, Juri Barthel, James H. Edgar, Leslie J. Allen, Ján Rusz

Abstract: The isotopic mass of constituent elements of materials has a well-known effect on the energy of vibrational modes. By means of monochromated scanning transmission electron microscopy we have experimentally studied the phonon bandstructure of hexagonal BN, where a phonon band gap appears between in-plane optical phonon modes and the lower energy part of the phonon spectrum. The size of the phonon b… ▽ More The isotopic mass of constituent elements of materials has a well-known effect on the energy of vibrational modes. By means of monochromated scanning transmission electron microscopy we have experimentally studied the phonon bandstructure of hexagonal BN, where a phonon band gap appears between in-plane optical phonon modes and the lower energy part of the phonon spectrum. The size of the phonon band gap can be manipulated by the isotopic mass of the boron. While in $^{11}$BN the phonon band gap is about 7 meV wide, in $^{10}$BN the gap nearly closes, being an order of magnitude smaller (below 0.5 meV). This opens exciting options for manipulating terahertz wave propagation through isotopically structured devices having otherwise no interfaces between chemically distinct components. △ Less

Submitted 6 March, 2023; v1 submitted 26 February, 2023; originally announced February 2023.

Comments: 5 pages, 3 figures

Transverse hypercrystals formed by periodically modulated phonon-polaritons

Authors: Hanan Herzig Sheinfux, Minwoo Jung, Lorenzo Orsini, Matteo Ceccanti, Aditya Mahalanabish, Daniel Martinez-Cercós, Iacopo Torre, David Barcons Ruiz, Eli Janzen, James H. Edgar, Valerio Pruneri, Gennady Shvets, Frank H. L. Koppens

Abstract: Photonic crystals and metamaterials are two overarching paradigms for manipulating light. Combining the two approaches leads to hypercrystals: hyperbolic dispersion metamaterials that undergo periodic modulation and mix photonic-crystal-like aspects with hyperbolic dispersion physics. So far, there has been limited experimental realization of hypercrystals due to various technical and design const… ▽ More Photonic crystals and metamaterials are two overarching paradigms for manipulating light. Combining the two approaches leads to hypercrystals: hyperbolic dispersion metamaterials that undergo periodic modulation and mix photonic-crystal-like aspects with hyperbolic dispersion physics. So far, there has been limited experimental realization of hypercrystals due to various technical and design constraints. Here, we create nanoscale hypercrystals with lattice constants ranging from 25 nm to 160 nm and measure their collective Bloch modes and dispersion with scattering nearfield microscopy. We demonstrate for the first time dispersion features such as negative group velocity, indicative of bandfolding, and signatures of sharp density of states peaks, expected for hypercrystals (and not for ordinary polaritonic crystals). These density peaks connect our findings to the theoretical prediction of an extremely rich hypercrystal bandstructure emerging even in geometrically simple lattices. These features make hypercrystals both fundamentally interesting, as well as of potential use to engineering nanoscale light-matter interactions. △ Less

Submitted 1 November, 2022; originally announced November 2022.

High quality nanocavities through multimodal confinement of hyperbolic polaritons in hexagonal boron nitride

Authors: Hanan Herzig Sheinfux, Lorenzo Orsini, Minwoo Jung, Iacopo Torre, Matteo Ceccanti, Simone Marconi, Rinu Maniyara, David Barcons Ruiz, Alexander Hötger, Ricardo Bertini, Sebastián Castilla, Niels C. H. Hesp, Eli Janzen, Alexander Holleitner, Valerio Pruneri, James H. Edgar, Gennady Shvets, Frank H. L. Koppens

Abstract: A conventional optical cavity supports modes which are confined because they are unable to leak out of the cavity. Bound state in continuum (BIC) cavities are an unconventional alternative, where light can leak out, but is confined by multimodal destructive interference. BICs are a general wave phenomenon, of particular interest to optics, but BICs and multimodal interference have never been demon… ▽ More A conventional optical cavity supports modes which are confined because they are unable to leak out of the cavity. Bound state in continuum (BIC) cavities are an unconventional alternative, where light can leak out, but is confined by multimodal destructive interference. BICs are a general wave phenomenon, of particular interest to optics, but BICs and multimodal interference have never been demonstrated at the nanoscale. Here, we demonstrate the first nanophotonic cavities based on BIC-like multimodal interference. This novel confinement mechanism for deep sub-wavelength light shows orders of magnitude improvement in several confinement metrics. Specifically, we obtain cavity volumes below 100x100x3nm^3 with quality factors about 100, with extreme cases having 23x23x3nm^3 volumes or quality factors above 400. Key to our approach, is the use of pristine crystalline hyperbolic dispersion media (HyM) which can support large momentum excitations with relatively low losses. Making a HyM cavity is complicated by the additional modes that appear in a HyM. Ordinarily, these serve as additional channels for leakage, reducing cavity performance. But, in our experiments, we find a BIC-like cavity confinement enhancement effect, which is intimately related to the ray-like nature of HyM excitations. In fact, the quality factors of our cavities exceed the maximum that is possible in the absence of higher order modes. The alliance of HyM with BICs in our work yields a radically novel way to confine light and is expected to have far reaching consequences wherever strong optical confinement is utilized, from ultra-strong light-matter interactions, to mid-IR nonlinear optics and a range of sensing applications. △ Less

Submitted 31 December, 2023; v1 submitted 17 February, 2022; originally announced February 2022.

Radiative lifetime of free excitons in hexagonal boron nitride

Authors: Sébastien Roux, Christophe Arnold, Fulvio Paleari, Lorenzo Sponza, Eli Janzen, James H. Edgar, Bérangère Toury, Catherine Journet, Vincent Garnier, Philippe Steyer, Takashi Taniguchi, Kenji Watanabe, François Ducastelle, Annick Loiseau, Julien Barjon

Abstract: Using a new time-resolved cathodoluminescence system dedicated to the UV spectral range, we present a first estimate of the radiative lifetime of free excitons in hBN at room temperature. This is carried out from a single experiment giving both the absolute luminescence intensity under continuous excitation and the decay time of free excitons in the time domain. The radiative lifetime of indirect… ▽ More Using a new time-resolved cathodoluminescence system dedicated to the UV spectral range, we present a first estimate of the radiative lifetime of free excitons in hBN at room temperature. This is carried out from a single experiment giving both the absolute luminescence intensity under continuous excitation and the decay time of free excitons in the time domain. The radiative lifetime of indirect excitons in hBN is equal to 27 ns, which is much shorter than in other indirect bandgap semiconductors. This is explained by the close proximity of the electron and the hole in the exciton complex, and also by the small energy difference between indirect and direct excitons. The unusually high luminescence efficiency of hBN for an indirect bandgap is therefore semi-quantitatively understood. △ Less

Submitted 2 July, 2021; originally announced July 2021.

Amplitude- and phase-resolved nano-imaging and nano-spectroscopy of polaritons in liquid environment

Authors: Divya Virmani, Andrei Bylinkin, Irene Dolado Lopez, Eli Janzen, James H. Edgar, Rainer Hillenbrand

Abstract: Localized and propagating polaritons allow for highly sensitive analysis of (bio)chemical substances and processes. Nanoimaging of the polaritons evanescent fields allows for critically important experimental mode identification and for studying field confinement. Here we describe two setups for polariton nanoimaging and spectroscopy in liquid, which is an indispensable environment for (bio)chemic… ▽ More Localized and propagating polaritons allow for highly sensitive analysis of (bio)chemical substances and processes. Nanoimaging of the polaritons evanescent fields allows for critically important experimental mode identification and for studying field confinement. Here we describe two setups for polariton nanoimaging and spectroscopy in liquid, which is an indispensable environment for (bio)chemical samples. We first demonstrate antenna mapping with a transflection infrared scattering-type scanning near-field optical microscope (s-SNOM), where the tip acts as a near-field scattering probe. We then demonstrate a total internal reflection (TIR) based setup, where the tip is both launching and probing ultra-confined polaritons in van der Waals materials, here phonon polaritons in hexagonal boron nitride (h-BN) flakes. This work lays the foundation for s-SNOM based polariton interferometry in liquid, which has wide application potential for in-situ studies of chemical reactions at the bare or functionalized surface of polaritonic materials, including (bio)chemical recognition analogous to the classical surface plasmon resonance spectroscopy. △ Less

Submitted 13 October, 2020; originally announced October 2020.

Journal ref: Nano Lett. 2021, 21, 3, 1360

Probing Mid-Infrared Phonon Polaritons in the Aqueous Phase

Authors: Haomin Wang, Eli Janzen, Le Wang, James H. Edgar, Xiaoji G. Xu

Abstract: Phonon polaritons (PhPs), the collective phonon oscillations with hybridized electromagnetic fields, concentrate optical fields in the mid-infrared frequency range that matches the vibrational modes of molecules. The utilization of PhPs holds the promise for chemical sensing tools and polariton-enhanced nanospectroscopy. However, investigations and innovations on PhPs in the aqueous phase remains… ▽ More Phonon polaritons (PhPs), the collective phonon oscillations with hybridized electromagnetic fields, concentrate optical fields in the mid-infrared frequency range that matches the vibrational modes of molecules. The utilization of PhPs holds the promise for chemical sensing tools and polariton-enhanced nanospectroscopy. However, investigations and innovations on PhPs in the aqueous phase remains stagnant, because of the lack of in situ mid-infrared nano-imaging methods in water. Strong infrared absorption from water prohibits optical delivery and detection in the mid-infrared for scattering-type near-field microscopy. Here, we present our solution: the detection of photothermal responses caused by the excitation of PhPs by liquid phase peak force infrared (LiPFIR) microscopy. Characteristic interference fringes of PhPs in 10B isotope-enriched h-BN were measured in the aqueous phase and their dispersion relationship extracted. LiPFIR enables the measurement of mid-infrared PhPs in the fluid phase, opening possibilities, and facilitating the development of mid-IR phonon polaritonics in water. △ Less

Submitted 18 March, 2020; originally announced March 2020.

Comments: 4 figures

Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface

Authors: David J. Christle, Paul V. Klimov, Charles F. de las Casas, Krisztián Szász, Viktor Ivády, Valdas Jokubavicius, Jawad ul Hassan, Mikael Syväjärvi, William F. Koehl, Takeshi Ohshima, Nguyen T. Son, Erik Janzén, Ádám Gali, David D. Awschalom

Abstract: The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a mechanism for high-fidelity spin-to-photon conversion, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here we demonstra… ▽ More The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a mechanism for high-fidelity spin-to-photon conversion, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here we demonstrate a high-fidelity spin-to-photon interface in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin-mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on shows promise for future quantum networks based on SiC defects. △ Less

Submitted 25 February, 2017; v1 submitted 23 February, 2017; originally announced February 2017.

Comments: 26 pages, 4 figures

Journal ref: Phys. Rev. X 7, 021046 (2017)

Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

Authors: Marina Radulaski, Matthias Widmann, Matthias Niethammer, Jingyuan Linda Zhang, Sang-Yun Lee, Torsten Rendler, Konstantinos G. Lagoudakis, Nguyen Tien Son, Erik Janzén, Takeshi Ohshima, Jörg Wrachtrup, Jelena Vučković

Abstract: Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated… ▽ More Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1,400 nm diameters. We obtain high collection efficiency, up to 22 kcounts/s optical saturation rates from a single silicon vacancy center, while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits. △ Less

Submitted 25 February, 2017; v1 submitted 8 December, 2016; originally announced December 2016.

Comments: 18 pages, 8 figures

Journal ref: Nano Letters 17 (3), 1782-1786 (2017)

Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN

Authors: William F. Koehl, Berk Diler, Samuel J. Whiteley, Alexandre Bourassa, N. T. Son, Erik Janzén, David D. Awschalom

Abstract: Spins bound to point defects are increasingly viewed as an important resource for solid-state implementations of quantum information technologies. In particular, there is a growing interest in the identification of new classes of defect spin that can be controlled optically. Here we demonstrate ensemble optical spin polarization and optically detected magnetic resonance (ODMR) of the S = 1 electro… ▽ More Spins bound to point defects are increasingly viewed as an important resource for solid-state implementations of quantum information technologies. In particular, there is a growing interest in the identification of new classes of defect spin that can be controlled optically. Here we demonstrate ensemble optical spin polarization and optically detected magnetic resonance (ODMR) of the S = 1 electronic ground state of chromium (Cr4+) impurities in silicon carbide (SiC) and gallium nitride (GaN). Spin polarization is made possible by the narrow optical linewidths of these ensembles (< 8.5 GHz), which are similar in magnitude to the ground state zero-field spin splitting energies of the ions at liquid helium temperatures. We therefore are able to optically resolve individual spin sublevels within the ensembles at low magnetic fields using resonant excitation from a cavity-stabilized, narrow-linewidth laser. Additionally, these near-infrared emitters possess exceptionally weak phonon sidebands, ensuring that > 73% of the overall optical emission is contained with the defects zero-phonon lines. These characteristics make this semiconductor-based, transition metal impurity system a promising target for further study in the ongoing effort to integrate optically active quantum states within common optoelectronic materials. △ Less

Submitted 29 August, 2016; originally announced August 2016.

Comments: 13 pages, 4 figures

Journal ref: Phys. Rev. B 95, 035207 (2017)

Vector magnetometry using silicon vacancies in 4H-SiC at ambient conditions

Authors: Matthias Niethammer, Matthias Widmann, Sang-Yun Lee, Pontus Stenberg, Olof Kordina, Takeshi Ohshima, Nguyen Tien Son, Erik Janzén, Jörg Wrachtrup

Abstract: Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. When optical readout of spin states is used, point defects achieve optical magnetic imaging with high spatial resolution at ambient conditions. Here, we demonstrate that genuine optical vector magnetometry can be realized… ▽ More Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. When optical readout of spin states is used, point defects achieve optical magnetic imaging with high spatial resolution at ambient conditions. Here, we demonstrate that genuine optical vector magnetometry can be realized using the silicon vacancy in SiC, which has an uncommon S=3/2 spin. To this end, we develop and experimentally test sensing protocols based on a reference field approach combined with multi frequency spin excitation. Our works suggest that the silicon vacancy in an industry-friendly platform, SiC, has potential for various magnetometry applications at ambient conditions. △ Less

Submitted 20 September, 2016; v1 submitted 3 June, 2016; originally announced June 2016.

Journal ref: Phys. Rev. Applied 6, 034001 (2016)

Anisotropy, phonon modes, and free charge carrier parameters in monoclinic $β$-gallium oxide single crystals

Authors: M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q. -T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, M. Higashiwaki

Abstract: We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and farinfrared active modes. We apply our model approach to monoclinic $β$-Ga$_2$O$_3$ single crystal samples. Surfaces cut under different angles from a bulk crystal, (010) and ($\bar{2}$01), are investigated by generalized spectrosc… ▽ More We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and farinfrared active modes. We apply our model approach to monoclinic $β$-Ga$_2$O$_3$ single crystal samples. Surfaces cut under different angles from a bulk crystal, (010) and ($\bar{2}$01), are investigated by generalized spectroscopic ellipsometry within infrared and farinfrared spectral regions. We determine the frequency dependence of 4 independent $β$-Ga$_2$O$_3$ Cartesian dielectric function tensor elements by matching large sets of experimental data using a point by point data inversion approach. From matching our monoclinic model to the obtained 4 dielectric function tensor components, we determine all infared and farinfrared active transverse optic phonon modes with $A_u$ and $B_u$ symmetry, and their eigenvectors within the monoclinic lattice. We find excellent agreement between our model results and results of density functional theory calculations. We derive and discuss the frequencies of longitudinal optical phonons in $β$-Ga$_2$O$_3$. We derive and report density and anisotropic mobility parameters of the free charge carriers within the tin doped crystals. We discuss the occurrence of longitudinal phonon plasmon coupled modes in $β$-Ga$_2$O$_3$ and provide their frequencies and eigenvectors. We also discuss and present monoclinic dielectric constants for static electric fields and frequencies above the reststrahlen range, and we provide a generalization of the Lyddane-Sachs-Teller relation for monoclinic lattices with infrared and farinfrared active modes. We find that the generalized Lyddane-Sachs-Teller relation is fulfilled excellently for $β$-Ga$_2$O$_3$. △ Less

Submitted 28 December, 2015; originally announced December 2015.

Comments: 18 pages, 12 figures, 105 references; Presented at IWGO 2015 Nov. 4th, Kyoto, Japan

Journal ref: Phys. Rev. B 93, 125209 (1-18) (2016)

Infrared dielectric function, phonon modes and free-charge carrier properties of high-Al-content Al$_x$Ga$_{1-x}$N alloys determined by mid-infrared spectroscopic ellipsometry and optical Hall effect

Authors: S. Schöche, T. Hofmann, D. Nilsson, A. Kakanakova-Georgieva, E. Janzên, P. Kühne, K. Lorenz, M. Schubert, V. Darakchieva

Abstract: The phonon mode parameters and anisotropic mid-infrared dielectric function tensor components of high- Al-content Al$_x$Ga$_{1-x}$N alloys in dependence of the Al content $x$ are precisely determined from mid-infrared spectroscopic ellipsometry measurements for a set of high-quality Si-doped Al$_x$Ga$_{1-x}$N epitaxial layers on 4H-SiC substrates. Two-mode behavior of the $E_1$(TO) modes and one-m… ▽ More The phonon mode parameters and anisotropic mid-infrared dielectric function tensor components of high- Al-content Al$_x$Ga$_{1-x}$N alloys in dependence of the Al content $x$ are precisely determined from mid-infrared spectroscopic ellipsometry measurements for a set of high-quality Si-doped Al$_x$Ga$_{1-x}$N epitaxial layers on 4H-SiC substrates. Two-mode behavior of the $E_1$(TO) modes and one-mode behavior of the $A_1$(LO) mode are found in agreement with previous Raman scattering spectroscopy reports. The composition dependencies of the IR active phonon frequency parameters are established and a discussion on the silent $B_1$ mode that may be disorder activated is provided. The static dielectric constants in dependence of $x$ are determined by using the best-match model derived phonon mode frequency and high-frequency dielectric constant parameters and applying the Lydanne-Sachs-Teller relation. The effective mass parameter in high-Al-content Al$_x$Ga$_{1-x}$N alloys and its composition dependence are determined from mid-infrared optical Hall effect measurements. Furtheremore, the free electron concentration $N$ and mobility parameters $μ$ of Al$_x$Ga$_{1-x}$N films with similar Si doping levels are investigated as function of the Al content, $x$ and discussed. △ Less

Submitted 4 December, 2015; originally announced December 2015.

Comments: 12 pages, 10 figures

Theoretical model of the dynamic spin polarization of nuclei coupled to paramagnetic point defects in diamond and silicon carbide

Authors: Viktor Ivády, Krisztián Szász, Abram L. Falk, Paul V. Klimov, David J. Christle, Erik Janzén, Igor A. Abrikosov, David D. Awschalom, Adam Gali

Abstract: Dynamic nuclear spin polarization (DNP) mediated by paramagnetic point defects in semiconductors is a key resource for both initializing nuclear quantum memories and producing nuclear hyperpolarization. DNP is therefore an important process in the field of quantum-information processing, sensitivity-enhanced nuclear magnetic resonance, and nuclear-spin-based spintronics. DNP based on optical pumpi… ▽ More Dynamic nuclear spin polarization (DNP) mediated by paramagnetic point defects in semiconductors is a key resource for both initializing nuclear quantum memories and producing nuclear hyperpolarization. DNP is therefore an important process in the field of quantum-information processing, sensitivity-enhanced nuclear magnetic resonance, and nuclear-spin-based spintronics. DNP based on optical pumping of point defects has been demonstrated by using the electron spin of nitrogen-vacancy (NV) center in diamond, and more recently, by using divacancy and related defect spins in hexagonal silicon carbide (SiC). Here, we describe a general model for these optical DNP processes that allows the effects of many microscopic processes to be integrated. Applying this theory, we gain a deeper insight into dynamic nuclear spin polarization and the physics of diamond and SiC defects. Our results are in good agreement with experimental observations and provide a detailed and unified understanding. In particular, our findings show that the defects' electron spin coherence times and excited state lifetimes are crucial factors in the entire DNP process. △ Less

Submitted 1 September, 2015; v1 submitted 21 May, 2015; originally announced May 2015.

Journal ref: Phys. Rev. B 92, 115206 (2015)

Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory

Authors: A. Szállás, K. Szász, X. T. Trinh, N. T. Son, E. Janzén, A. Gali

Abstract: We carried out Heyd-Scuseria-Ernzerhof hybrid density functional theory plane wave supercell calculations in wurtzite aluminum nitride in order to characterize the geometry, formation energies, transition levels and hyperfine tensors of the nitrogen split interstitial defect. The calculated hyperfine tensors may provide useful fingerprint of this defect for electron paramagnetic resonance measurem… ▽ More We carried out Heyd-Scuseria-Ernzerhof hybrid density functional theory plane wave supercell calculations in wurtzite aluminum nitride in order to characterize the geometry, formation energies, transition levels and hyperfine tensors of the nitrogen split interstitial defect. The calculated hyperfine tensors may provide useful fingerprint of this defect for electron paramagnetic resonance measurement. △ Less

Submitted 26 November, 2014; originally announced November 2014.

Comments: 5 pages, 3 figures

Journal ref: J. Appl. Phys. 116, 113702 (2014)

Coherent control of single spins in silicon carbide at room temperature

Authors: Matthias Widmann, Sang-Yun Lee, Torsten Rendler, Nguyen Tien Son, Helmut Fedder, Seoyoung Paik, Li-Ping Yang, Nan Zhao, Sen Yang, Ian Booker, Andrej Denisenko, Mohammad Jamali, Seyed Ali Momenzadeh, Ilja Gerhardt, Takeshi Ohshima, Adam Gali, Erik Janzén, Jörg Wrachtrup

Abstract: Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond, or individual phosphorous dopants in silicon have shown spectacular progress but either miss established nanotechnology or an efficient spin-photon interface. Silicon carbide (SiC) combines the strength of both systems: It has a large bandgap with deep defects and benefits from mature fa… ▽ More Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond, or individual phosphorous dopants in silicon have shown spectacular progress but either miss established nanotechnology or an efficient spin-photon interface. Silicon carbide (SiC) combines the strength of both systems: It has a large bandgap with deep defects and benefits from mature fabrication techniques. Here we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence time under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology. △ Less

Submitted 31 October, 2014; v1 submitted 1 July, 2014; originally announced July 2014.

Isolated electron spins in silicon carbide with millisecond-coherence times

Authors: David J. Christle, Abram L. Falk, Paolo Andrich, Paul V. Klimov, Jawad ul Hassan, Nguyen T. Son, Erik Janzén, Takeshi Ohshima, David D. Awschalom

Abstract: The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions, they are increasingly recognized as a valuable resource for quantum-information and nanoscale-sensing applications. Here, we show that individual electron spin st… ▽ More The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions, they are increasingly recognized as a valuable resource for quantum-information and nanoscale-sensing applications. Here, we show that individual electron spin states in highly purified monocrystalline 4H-SiC can be isolated and coherently controlled. Bound to neutral divacancy defects, these states exhibit exceptionally long ensemble Hahn-echo spin coherence, exceeding 1 ms. Coherent control of single spins in a material amenable to advanced growth and microfabrication techniques is an exciting route to wafer-scale quantum technologies. △ Less

Submitted 27 June, 2014; originally announced June 2014.

Comments: 11 pages, 3 figures

Theoretical unification of hybrid-DFT and DFT+U methods for the treatment of localized orbitals

Authors: Viktor Ivády, Rickard Armiento, Krisztián Szász, Erik Janzén, Adam Gali, Igor A. Abrikosov

Abstract: We formulate the on-site occupation dependent exchange correlation energy and effective potential of hybrid functionals for localized states and connect them to the on-site correction term of the DFT+U method. Our derivation provides a theoretical justification for adding a DFT+U-like onsite potential in hybrid DFT calculations to resolve issues caused by overscreening of localized states. The res… ▽ More We formulate the on-site occupation dependent exchange correlation energy and effective potential of hybrid functionals for localized states and connect them to the on-site correction term of the DFT+U method. Our derivation provides a theoretical justification for adding a DFT+U-like onsite potential in hybrid DFT calculations to resolve issues caused by overscreening of localized states. The resulting scheme, hybrid- DFT+Vw, is tested for chromium impurity in wurtzite AlN and vanadium impurity in 4H-SiC, which are paradigm examples of systems with different degree of localization between host and impurity orbitals. △ Less

Submitted 11 June, 2014; originally announced June 2014.

Electron effective mass in Al$_{0.72}$Ga$_{0.28}$N alloys determined by mid-infrared optical Hall effect

Authors: S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, V. Darakchieva

Abstract: The effective electron mass parameter in Si-doped Al$_{0.72}$Ga$_{0.28}$N is determined to be $m^\ast=(0.336\pm0.020)\,m_0$ from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and… ▽ More The effective electron mass parameter in Si-doped Al$_{0.72}$Ga$_{0.28}$N is determined to be $m^\ast=(0.336\pm0.020)\,m_0$ from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and $m^\ast=0.232\,m_0$ for GaN, an average effective electron mass of $m^\ast=0.376\,m_0$ can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E$_1$(TO) and one phonon mode behavior of the A$_1$(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies. △ Less

Submitted 14 November, 2013; originally announced November 2013.

The role of screening in the density functional applied on transition metal defects in semiconductors

Authors: V. Ivády, I. A. Abrikosov, E. Janzén, A. Gali

Abstract: We study selected transition metal related point defects in silicon and silicon carbide semiconductors by a range separated hybrid density functional (HSE06). We find that HSE06 does not fulfill the generalized Koopmans' Theorem for every defect which is due to the self-interaction error in the functional in such cases. Restoring the so-called generalized Koopmans' Condition with a simple correcti… ▽ More We study selected transition metal related point defects in silicon and silicon carbide semiconductors by a range separated hybrid density functional (HSE06). We find that HSE06 does not fulfill the generalized Koopmans' Theorem for every defect which is due to the self-interaction error in the functional in such cases. Restoring the so-called generalized Koopmans' Condition with a simple correction in the functional can eliminate this error, and brings the calculated charge transition levels remarkably close to the experimental data as well as to the calculated quasi-particle levels from many-body perturbation theory. △ Less

Submitted 18 January, 2013; v1 submitted 17 January, 2013; originally announced January 2013.

Theory of Spin-Conserving Excitation of the $N-V^-$ Center in Diamond

Authors: Adam Gali, Erik Janzén, Péter Deák, Georg Kresse, Efthimios Kaxiras

Abstract: The negatively charged nitrogen-vacancy defect ($N-V^-$ center) in diamond is an important atomic-scale structure that can be used as a qubit in quantum computing and as a marker in biomedical applications. Its usefulness relies on the ability to optically excite electrons between well-defined gap states, which requires clear and detailed understanding of the relevant states and excitation proce… ▽ More The negatively charged nitrogen-vacancy defect ($N-V^-$ center) in diamond is an important atomic-scale structure that can be used as a qubit in quantum computing and as a marker in biomedical applications. Its usefulness relies on the ability to optically excite electrons between well-defined gap states, which requires clear and detailed understanding of the relevant states and excitation processes. Here we show that by using hybrid density-functional-theory calculations in a large supercell we can reproduce the zero-phonon line and the Stokes and anti-Stokes shifts, yielding a complete picture of the spin-conserving excitation of this defect. △ Less

Submitted 24 March, 2009; originally announced March 2009.

Comments: 4 pages, 2 figures

Clustering of vacancy defects in high-purity semi-insulating SiC

Authors: R. Aavikko, K. Saarinen, F. Tuomisto, B. Magnusson, N. T. Son, E. Janzen

Abstract: Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of 4--5 missing atoms and (ii) Si vacancy related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity both in as-grown and annealed material. Our results sugg… ▽ More Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of 4--5 missing atoms and (ii) Si vacancy related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity both in as-grown and annealed material. Our results suggest that Si vacancy related complexes compensate electrically the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity. △ Less

Submitted 6 June, 2006; v1 submitted 31 March, 2006; originally announced March 2006.

Comments: 8 pages, 5 figures