Showing 1–1 of 1 results for author: Capello, V

On quantitative analysis of interband recombination dynamics: Theory and application to bulk ZnO

Authors: S. Lettieri, V. Capello, L. Santamaria, P. Maddalena

Abstract: The issue of the quantitative analysis of time-resolved photoluminescence experiments is addressed by developing and describing two approaches for determination of unimolecular lifetime, bimolecular recombination coefficient, and equilibrium free-carrier concentration, based on a quite general second-order expression of the electron-hole recombination rate. Application to the case of band-edge emi… ▽ More The issue of the quantitative analysis of time-resolved photoluminescence experiments is addressed by developing and describing two approaches for determination of unimolecular lifetime, bimolecular recombination coefficient, and equilibrium free-carrier concentration, based on a quite general second-order expression of the electron-hole recombination rate. Application to the case of band-edge emission of ZnO single crystals is reported, evidencing the signature of sub-nanosecond second-order recombination dynamics for optical transitions close to the interband excitation edge. The resulting findings are in good agreement with the model prediction and further confirm the presence, formerly evidenced in literature by non-optical methods, of near-surface conductive layers in ZnO crystals with sheet charge densities of about 3÷5*10^13 cm^-2 △ Less

Submitted 19 December, 2013; originally announced December 2013.

Comments: 4 pages, 5 figures

Journal ref: Applied Physics Letters 103, 241910 (2013)