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Condensed Matter > Materials Science

arXiv:1312.5768 (cond-mat)
[Submitted on 19 Dec 2013]

Title:On quantitative analysis of interband recombination dynamics: Theory and application to bulk ZnO

Authors:S. Lettieri, V. Capello, L. Santamaria, P. Maddalena
View a PDF of the paper titled On quantitative analysis of interband recombination dynamics: Theory and application to bulk ZnO, by S. Lettieri and 3 other authors
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Abstract:The issue of the quantitative analysis of time-resolved photoluminescence experiments is addressed by developing and describing two approaches for determination of unimolecular lifetime, bimolecular recombination coefficient, and equilibrium free-carrier concentration, based on a quite general second-order expression of the electron-hole recombination rate. Application to the case of band-edge emission of ZnO single crystals is reported, evidencing the signature of sub-nanosecond second-order recombination dynamics for optical transitions close to the interband excitation edge. The resulting findings are in good agreement with the model prediction and further confirm the presence, formerly evidenced in literature by non-optical methods, of near-surface conductive layers in ZnO crystals with sheet charge densities of about 3÷5*10^13 cm^-2
Comments: 4 pages, 5 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1312.5768 [cond-mat.mtrl-sci]
  (or arXiv:1312.5768v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1312.5768
arXiv-issued DOI via DataCite
Journal reference: Applied Physics Letters 103, 241910 (2013)
Related DOI: https://doi.org/10.1063/1.4847615
DOI(s) linking to related resources

Submission history

From: Stefano Lettieri Dr. [view email]
[v1] Thu, 19 Dec 2013 22:10:01 UTC (896 KB)
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