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Condensed Matter > Materials Science

arXiv:cond-mat/9610108 (cond-mat)
[Submitted on 14 Oct 1996 (v1), last revised 24 Feb 1997 (this version, v2)]

Title:Theoretical evidence for efficient p-type doping of GaN using beryllium

Authors:F. Bernardini, Vincenzo Fiorentini, A. Bosin (Cagliari)
View a PDF of the paper titled Theoretical evidence for efficient p-type doping of GaN using beryllium, by F. Bernardini and 2 other authors
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Abstract: Ab initio calculations predict that Be is a shallow acceptor in GaN. Its thermal ionization energy is 0.06 eV in wurtzite GaN; the level is valence resonant in the zincblende phase. Be incorporation is severely limited by the formation of Be_3N_2. We show however that co-incorporation with reactive species can enhance the solubility. H-assisted incorporation should lead to high doping levels in MOCVD growth after post-growth annealing at about 850 K. Be-O co-incorporation produces high Be and O concentrations at MBE growth temperatures.
Comments: revised Feb 24 1997
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:cond-mat/9610108 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/9610108v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/9610108
arXiv-issued DOI via DataCite
Related DOI: https://doi.org/10.1063/1.118766
DOI(s) linking to related resources

Submission history

From: Vincenzo Fiorentini [view email]
[v1] Mon, 14 Oct 1996 12:46:58 UTC (8 KB)
[v2] Mon, 24 Feb 1997 16:22:35 UTC (8 KB)
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