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Condensed Matter > Materials Science

arXiv:cond-mat/0605516 (cond-mat)
[Submitted on 22 May 2006]

Title:Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures

Authors:D. R. McCamey, H. Huebl, M. S. Brandt, W. D. Hutchison, J. C. McCallum, R. G. Clark, A. R. Hamilton
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Abstract: We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist of high-dose implanted metallic leads with a square gap, into which Phosphorus is implanted at a non-metallic dose corresponding to 10^17 cm^-3. By restricting this secondary implant to a 100 nm x 100 nm region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum information processing.
Comments: 9 pages, 3 figures
Subjects: Materials Science (cond-mat.mtrl-sci); Other Condensed Matter (cond-mat.other)
Cite as: arXiv:cond-mat/0605516 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0605516v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0605516
Journal reference: Applied Physics Letters 89, 182115 (2006)
Related DOI: https://doi.org/10.1063/1.2358928

Submission history

From: Dane McCamey [view email]
[v1] Mon, 22 May 2006 09:16:37 UTC (767 KB)
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